Adhesive composition

Abstract

The present invention provides an adhesive composition that is capable of forming an adhesive layer, in which defects are suppressed even if the film thickness is thin, in a laminate that has a support substrate, a release agent layer, the adhesive layer, an electronic device substrate (a substrate having a semiconductor chip and a sealing layer for sealing the semiconductor chip) in this order for the purpose of manufacturing a fan-out type semiconductor package. The present invention also provides: a laminate using the adhesive composition; and a method for manufacturing a fan-out type semiconductor package.　The present invention also provides an adhesive composition that is capable of forming an adhesive layer, in which defects are suppressed even if the film thickness is thin, in a laminate that has a support substrate, a release agent layer, the adhesive layer, a semiconductor substrate or an electronic device substrate in this order for the purpose of manufacturing a processed semiconductor substrate or an electronic device substrate. The present invention also provides: a laminate using the adhesive composition; and a method for manufacturing a processed semiconductor substrate or an electronic device substrate.　Disclosed is an adhesive composition for forming an adhesive layer that is used for the purpose of temporarily bonding a semiconductor substrate or an electronic device substrate and a support substrate, wherein the content of the solvent excluding the solid content in the adhesive composition is 20 mass% or more, and the proportion of a solvent (S) having a boiling point of 150°C or less in the solvent is 20 mass% or more.

Description

adhesive composition

[0001] The present invention relates to an adhesive composition, a laminate, a method for producing a fan-out semiconductor package, and a method for producing a processed semiconductor or electronic device substrate.

[0002] Examples of technologies for semiconductor packages (electronic components) that include semiconductor elements include fan-in technology and fan-out technology. Known semiconductor packages using fan-in technology include fan-in WLP (Fan-in Wafer Level Package), in which terminals at the end of a bare chip are rearranged within the chip area. Known semiconductor packages using fan-out technology include fan-out WLP (Fan-out Wafer Level Package), in which the terminals are rearranged outside the chip area.

[0003] In wafer-level packaging, there are two methods for manufacturing fan-out semiconductor packages: a method called mold first and a method called RDL (Redistribution Layer) first. In the mold first method, a semiconductor chip and an encapsulation layer for encapsulating the semiconductor chip are formed on a support base, and then a redistribution layer is formed. In the RDL first method, a redistribution layer is formed on the support base, and then the semiconductor chip is mounted on the redistribution layer and an encapsulation layer is formed. In the mold first method, an electronic device substrate having a semiconductor chip and an encapsulation layer for encapsulating the semiconductor chip is formed on a support base, and then the support base and the electronic device substrate are peeled off, and then a redistribution layer is formed on the peeled side of the electronic device substrate.

[0004] For example, a known method for manufacturing fan-out type wafer-level packaging using a mold-first method involves temporarily fixing multiple semiconductor elements to a support substrate to which a double-sided adhesive sheet is attached as a temporary fixing material, collectively sealing the multiple semiconductor elements with a sealing resin, removing the adhesive sheet from the sealing body, and then forming a redistribution layer on the surface of the sealing body where the adhesive sheet was attached (see, for example, Patent Document 1).

[0005] In order to separate the support substrate and the electronic device substrate, a method of forming a separation layer on the support substrate is adopted. For example, Patent Document 2 discloses a method of manufacturing a laminate in which a light-transmitting support substrate and a substrate are bonded together via a light-to-heat conversion layer (separation layer) and an adhesive layer provided on the support substrate side, the substrate is processed, and then radiant energy (light) is irradiated from the support substrate side to the separation layer to alter and decompose the separation layer, thereby separating the processed substrate and the support substrate.

[0006] JP 2015-32647 A JP 2004-64040 A

[0007] For example, when the fan-out type wafer-level packaging described above is manufactured using a mold-first method, a conceivable manufacturing method involves laminating, in that order, a release agent layer for light irradiation peeling and an adhesive layer on a light-transmitting support substrate, forming an electronic device substrate having a semiconductor chip and an encapsulating layer for encapsulating the semiconductor chip on the adhesive layer, irradiating the laminate with a laser to peel the support substrate from the electronic device substrate, removing the adhesive layer remaining on the electronic device substrate after peeling, and then forming a rewiring layer on the surface of the electronic device substrate on the side from which the adhesive layer was removed. In this case, it is desirable to form a thin adhesive layer in order to remove the adhesive layer remaining on the electronic device substrate after peeling cleanly and in a short time. Furthermore, even in a manufacturing method in which a semiconductor substrate or electronic device substrate is temporarily bonded to a support substrate, the semiconductor substrate or electronic device substrate is processed, and then the processed semiconductor substrate or electronic device substrate is peeled from the support substrate to obtain a processed semiconductor substrate or electronic device substrate, a manufacturing method is conceivable in which a release agent layer for light irradiation peeling and an adhesive layer are laminated in this order on a light-transmitting support substrate, the semiconductor substrate or electronic device substrate is formed on the adhesive layer, and the support substrate is irradiated with a laser to peel the semiconductor substrate or electronic device substrate from the laminate, and the adhesive layer remaining on the semiconductor substrate or electronic device substrate after peeling is removed to obtain a processed semiconductor substrate or electronic device substrate. In this case, too, it is desirable to form a thin adhesive layer in order to remove the adhesive layer remaining on the semiconductor substrate or electronic device substrate after peeling cleanly and in a short time. However, when attempting to form an adhesive layer using a commonly known adhesive composition, if the thickness of the adhesive layer is about 50 μm, defects on the surface and appearance of the coating film to which the adhesive composition is applied do not pose a problem. However, it has been found that if a thin film of, for example, about 10 μm is formed, numerous defective locations occur, causing problems with the coating film performance.Therefore, when manufacturing fan-out type wafer level packaging using the mold-first method or when manufacturing processed semiconductor substrates or electronic device substrates, it is desirable to provide an adhesive layer that has good coating performance with reduced defects, even if the adhesive layer formed is thin.

[0008] The present invention has been made in view of the above circumstances. It is an object of the present invention to provide an adhesive composition that can form an adhesive layer with reduced defects even in a thin film thickness in a laminate having, in this order, a support substrate, a release agent layer, an adhesive layer, and an electronic device substrate (a substrate having a semiconductor chip and an encapsulating layer for encapsulating the semiconductor chip), for example, for producing a fan-out semiconductor package. Another object of the present invention is to provide a laminate and a method for producing a fan-out semiconductor package using the adhesive composition. Furthermore, the present invention is applicable not only to the production of fan-out semiconductor packages but also to the production of processed semiconductor substrates or electronic device substrates. For example, an object of the present invention is to provide an adhesive composition that can form an adhesive layer with reduced defects even in a thin film thickness in a laminate having, in this order, a support substrate, a release agent layer, an adhesive layer, and a semiconductor substrate or electronic device substrate, for producing a processed semiconductor substrate or electronic device substrate. Another object of the present invention is to provide a laminate and a method for producing a processed semiconductor substrate or electronic device substrate using the adhesive composition.

[0009] The present inventors have conducted extensive research to solve the above problems, and as a result have found that the above problems can be solved, and have completed the present invention having the following gist.

[0010] That is, the present invention includes the following: [1] An adhesive composition for forming an adhesive layer used to temporarily bond a semiconductor substrate or an electronic device substrate to a support substrate, wherein the adhesive composition has a solvent content excluding solids of 20% by mass or more, and a solvent (S) having a boiling point of 150°C or less accounts for 20% by mass or more of the solvent. [2] The adhesive composition according to [1], wherein the solvent (S) accounts for 20% by mass or more and 95% by mass or less of the solvent. [3] The adhesive composition according to [1] or [2], wherein the solvent (S) is at least one selected from the group consisting of isononane, propylene glycol monomethyl ether acetate, butyl acetate, propylene glycol monomethyl ether, and octane. [4] The adhesive composition according to any of [1] to [3], wherein the adhesive composition contains a component (A) that cures by a hydrosilylation reaction. [5] The adhesive composition according to [4], wherein the component (A) comprises: a polyorganosiloxane (a1) having a silicon-bonded alkenyl group having 2 to 40 carbon atoms, and a polyorganosiloxane (a2) having a Si—H group. [6] A laminate comprising a light-transmitting support substrate, a release agent layer for peeling by light irradiation, an adhesive layer, and a semiconductor substrate or an electronic device substrate laminated in this order, wherein the electronic device substrate has a semiconductor chip and a sealing layer that seals the semiconductor chip, and the adhesive layer is an adhesive layer formed from the adhesive composition according to any one of [1] to [5].[7] A method for manufacturing a fan-out type semiconductor package, wherein the electronic device substrate in the laminate according to [6] has a plurality of semiconductor chips and an encapsulation layer for encapsulating the semiconductor chips, the method comprising the steps of: separating the electronic device substrate from the support substrate by irradiating the laminate having the electronic device substrate with light from the support substrate side; removing an adhesive layer on the electronic device substrate; forming a wiring layer on the surface of the electronic device substrate from the side where the adhesive layer has been removed; and dividing the electronic device substrate into individual semiconductor chips to obtain individual semiconductor packages. [8] The method for manufacturing a fan-out type semiconductor package according to [7], wherein a thickness of the adhesive layer in the laminate is 0.1 μm to 10 μm. [9] The method for manufacturing a fan-out type semiconductor package according to [7] or [8], wherein the laminate is obtained through the steps of forming a release agent layer for peeling by light irradiation on a light-transmitting support substrate, forming an adhesive layer on the release agent layer for peeling by light irradiation, mounting a plurality of semiconductor chips on the adhesive layer, and forming a sealing layer for sealing the semiconductor chips on the adhesive layer.

[10] A method for manufacturing a processed semiconductor substrate or electronic device substrate, comprising: a processing step of processing the semiconductor substrate or the electronic device substrate of the laminate according to [6], and a step of separating the semiconductor substrate or the electronic device substrate processed by the processing step from the support substrate by irradiating light from the support substrate side.

[11] The method for manufacturing a processed semiconductor substrate or electronic device substrate according to

[10] , further comprising a step of removing the adhesive layer on the semiconductor substrate or the electronic device substrate after separation.

[12] The method for producing a processed semiconductor substrate or electronic device substrate according to

[10] or

[11] , wherein the thickness of the adhesive layer in the laminate is 0.1 μm to 10 μm.

[13] The method for producing a processed semiconductor substrate or electronic device substrate according to any one of

[10] to

[12] , wherein the laminate is obtained through the steps of: forming a release agent layer for peeling off by light irradiation on a light-transmitting support substrate; forming an adhesive layer on the release agent layer for peeling off by light irradiation; and forming a semiconductor substrate or electronic device substrate on the adhesive layer.

[0011] According to the present invention, an adhesive composition can be provided that can form an adhesive layer with reduced defects even if the thickness is thin in a laminate having, in this order, a support substrate, a release agent layer, an adhesive layer, and an electronic device substrate (a substrate having a semiconductor chip and an encapsulating layer for encapsulating the semiconductor chip) for producing a fan-out type semiconductor package. It is also possible to provide a laminate and a method for producing a fan-out type semiconductor package using the adhesive composition. It is also possible to provide an adhesive composition that can form an adhesive layer with reduced defects even if the thickness is thin in a laminate having, in this order, a support substrate, a release agent layer, an adhesive layer, and a semiconductor substrate or electronic device substrate for producing a processed semiconductor substrate or electronic device substrate. It is also possible to provide a laminate and a method for producing a processed semiconductor substrate or electronic device substrate using the adhesive composition.

[0012] FIG. 1A is a schematic cross-sectional view (part 1) illustrating a manufacturing method for the laminate of the first embodiment A. FIG. 1B is a schematic cross-sectional view (part 2) illustrating a manufacturing method for the laminate of the first embodiment A. FIG. 1C is a schematic cross-sectional view (part 3) illustrating a manufacturing method for the laminate of the first embodiment A. FIG. 1D is a schematic cross-sectional view (part 4) illustrating a manufacturing method for the laminate of the first embodiment A. FIG. 1E is a schematic cross-sectional view (part 5) illustrating a manufacturing method for the laminate of the first embodiment A. FIG. 1F is a schematic cross-sectional view (part 6) illustrating a manufacturing method for the laminate of the first embodiment A. FIG. 1G is a schematic cross-sectional view (part 7) illustrating a manufacturing method for the laminate of the first embodiment A. FIG. 1H is a schematic cross-sectional view (part 8) illustrating a manufacturing method for the laminate of the first embodiment A. FIG. 2A is a schematic cross-sectional view (part 1) illustrating a manufacturing method for the laminate of the second embodiment B-1. FIG. 2B is a schematic cross-sectional view (part 2) illustrating a manufacturing method for the laminate of the second embodiment B-1. FIG. 2C is a schematic cross-sectional view (part 3) for explaining a manufacturing method for the laminate of the second embodiment B-1. FIG. 2D is a schematic cross-sectional view (part 4) for explaining a manufacturing method for the laminate of the second embodiment B-1. FIG. 2E is a schematic cross-sectional view (part 5) for explaining a manufacturing method for the laminate of the second embodiment B-1. FIG. 2F is a schematic cross-sectional view (part 6) for explaining a manufacturing method for the laminate of the second embodiment B-1. FIG. 2G is a schematic cross-sectional view (part 7) for explaining a manufacturing method for the laminate of the second embodiment B-1. FIG. 3A is a schematic cross-sectional view (part 1) for explaining a manufacturing method for the laminate of the second embodiment B-2. FIG. 3B is a schematic cross-sectional view (part 2) for explaining a manufacturing method for the laminate of the second embodiment B-2. FIG. 3C is a schematic cross-sectional view (part 3) for explaining a manufacturing method for the laminate of the second embodiment B-2. FIG. 3D is a schematic cross-sectional view (part 4) for explaining a manufacturing method for the laminate of the second embodiment B-2.Figure 3E is a schematic cross-sectional view (part 5) for explaining a manufacturing method for the laminate of the second embodiment B-2. Figure 3F is a schematic cross-sectional view (part 6) for explaining a manufacturing method for the laminate of the second embodiment B-2. Figure 3G is a schematic cross-sectional view (part 7) for explaining a manufacturing method for the laminate of the second embodiment B-2. Figure 3H is a schematic cross-sectional view (part 8) for explaining a manufacturing method for the laminate of the second embodiment B-2.

[0013] (Adhesive Composition) The adhesive composition of the present invention has a solvent content excluding solids of 20% by mass or more, and a solvent having a boiling point of 150°C or less (hereinafter sometimes referred to as "solvent (S)" or "highly volatile solvent") accounts for 20% by mass or more of the solvent. The adhesive composition of the present invention is used to form an adhesive layer used for temporarily bonding a semiconductor substrate or electronic device substrate to a support substrate. The adhesive layer formed from the adhesive composition of the present invention is suitable for use in methods for producing fan-out semiconductor packages (particularly for producing fan-out wafer-level packaging by mold-first), or for producing processed semiconductor substrates or electronic device substrates.

[0014] Hereinafter, the method for manufacturing a fan-out type semiconductor package will be described as "first embodiment A," and the method for manufacturing a processed semiconductor substrate or electronic device substrate will be described as "second embodiment B."

[0015] In a first embodiment A, the adhesive composition of the present invention is used to form an adhesive layer in the laminate of the first embodiment A described below, in order to produce a fan-out type semiconductor package. -Laminate of First Embodiment A- The laminate of the first embodiment A is a laminate in which a light-transmitting support substrate, a release agent layer for peeling by light irradiation, an adhesive layer, and an electronic device substrate are laminated in this order. The electronic device substrate has a semiconductor chip and an encapsulation layer that encapsulates the semiconductor chip. When the adhesive layer in the laminate of the first embodiment A is formed using the adhesive composition of the present invention, an adhesive layer in which defects are suppressed can be formed even if the film thickness is thin.

[0016] In a second embodiment B, the adhesive composition of the present invention is used to form an adhesive layer in the laminate of the second embodiment B described below, in order to produce a processed semiconductor substrate or electronic device substrate. -Laminate of the second embodiment B- The laminate of the second embodiment B is a laminate in which a light-transmitting support substrate, a release agent layer for peeling by light irradiation, an adhesive layer, and a semiconductor substrate or electronic device substrate are laminated in this order. Here, the electronic device substrate refers to a substrate having a semiconductor chip and an encapsulating layer that encapsulates the semiconductor chip, as in the first embodiment A above. When the adhesive layer in the laminate of the second embodiment B is formed using the adhesive composition of the present invention, an adhesive layer in which defects are suppressed can be formed even if the film thickness is thin.

[0017] The adhesive composition of the present invention will be described below. The laminate of the first embodiment A and the laminate of the second embodiment B will also be described, but the description of the laminate will be given after the description of the composition.

[0018] <Solvent in Adhesive Composition> The adhesive composition of the present invention has a solvent content excluding solids of 20% by mass or more, and the proportion of a highly volatile solvent having a boiling point of 150° C. or less is 20% by mass or more within the solvent. By specifying the proportion of the solvent in the adhesive composition as described above, and further specifying the proportion of a specific solvent within the solvent, an adhesive layer formed using an adhesive composition having such a configuration becomes an adhesive layer in which defects are suppressed even if the film thickness is thin.

[0019] As a result of investigations by the present inventors, the following was confirmed. For example, when adhesive layers of 50 μm or 30 μm in thickness were formed using adhesive composition (a) containing only p-menthane, a common solvent used in adhesive compositions, rather than a specific solvent as defined in the present invention, an adhesive layer with good coating performance was obtained, but when the thickness was 10 μm or less, numerous defects appeared on the surface and in appearance. On the other hand, when adhesive composition (b) of the present invention, which contains a highly volatile solvent (e.g., isononane), was used to form a thin adhesive layer of 10 μm or less in thickness, with good coating performance and reduced defects on the surface and in appearance, the film thickness was adjusted by changing the content of the solvent contained in the adhesive composition (note that the type of solids in adhesive composition (a) and adhesive composition (b) was the same), the following results were obtained.

[0020] In the composition of a conventional adhesive composition used for a film thickness of 30 μm, the solids concentration (proportion of components other than solvent (non-volatile content)):solvent ratio was 91% by mass:9% by mass. On the other hand, when the adhesive composition of the present invention was used, the solids concentration (proportion of components other than solvent (non-volatile content)):solvent ratio was: 85% by mass:25% by mass, i.e., the solvent was 25% by mass or more, an adhesive layer with good coating performance could be formed even with a film thickness of 10 μm; 62% by mass:38% by mass, i.e., the solvent was 38% by mass or more, an adhesive layer with good coating performance could be formed even with a film thickness of 5 μm; 47% by mass:53% by mass, i.e., the solvent was 53% by mass or more, an adhesive layer with good coating performance could be formed even with a film thickness of 3 μm; and 30% by mass:70% by mass, i.e., the solvent was 70% by mass or more, an adhesive layer with good coating performance could be formed even with a film thickness of 1 μm.

[0021] The content of the solvent, excluding the solid content, in the adhesive composition of the present invention can be appropriately selected depending on the desired film thickness of the adhesive layer, and is not particularly limited as long as an adhesive layer with good coating performance can be formed. For example, the content can be as described above.

[0022] Furthermore, in the adhesive composition of the present invention, the proportion of highly volatile solvents having a boiling point of 150°C or less in the solvents contained in the adhesive composition is 20% by mass or more, preferably 25% by mass or more, and more preferably 50% by mass or more. Furthermore, the higher the proportion of highly volatile solvents, the more efficiently defects can be suppressed, so the highly volatile solvent is more preferably 90% by mass or more, and most preferably 100% by mass. On the other hand, although solvents other than the highly volatile solvent may be contained due to their origin from raw materials, good coatability can be maintained as long as the highly volatile solvent is contained in the above-mentioned proportion.

[0023] A highly volatile solvent refers to a solvent having a boiling point of 150°C or lower, and examples thereof include isononane, propylene glycol monomethyl ether acetate, butyl acetate, propylene glycol monomethyl ether, and octane. On the other hand, a low-volatile solvent refers to a solvent having a boiling point higher than 150°C, and examples thereof include p-menthane, n-decane, mesitylene, limonene, and cyclohexanone. The boiling points are measured at 1 atmosphere. The solvent contained in the adhesive composition of the present invention may preferably contain at least one highly volatile solvent selected from the group consisting of isononane, propylene glycol monomethyl ether acetate, butyl acetate, propylene glycol monomethyl ether, and octane.

[0024] The type of solid content other than the solvent contained in the adhesive composition is not particularly limited, and can be appropriately selected from, for example, solids used as solids contained in adhesive compositions used when temporarily bonding a support substrate and a semiconductor substrate or an electronic device substrate.

[0025] <Solid content in adhesive composition> Examples of types of adhesive components in the adhesive composition include, but are not limited to, polysiloxane-based adhesives, acrylic resin-based adhesives, epoxy resin-based adhesives, polyamide-based adhesives, polystyrene-based adhesives, polyimide adhesives, and phenolic resin-based adhesives. Among these, polysiloxane-based adhesives are preferred as adhesive compositions because they exhibit suitable adhesive performance during processing of semiconductor substrates and the like, are suitable for peeling after processing, have excellent heat resistance, and can be suitably removed with a cleaning composition. The adhesive component in the adhesive composition is usually not an adhesive component for peeling by light irradiation.

[0026] In a preferred embodiment, the adhesive composition contains a polyorganosiloxane. In another preferred embodiment, the adhesive composition contains a component that cures by a hydrosilylation reaction.

[0027] For example, the adhesive composition used in the present invention contains a curable component (A) that serves as an adhesive component. The adhesive composition used in the present invention may contain a curable component (A) that serves as an adhesive component and a component (B) that does not undergo a curing reaction. Here, an example of the component (B) that does not undergo a curing reaction is polyorganosiloxane. Note that, in the present invention, "does not undergo a curing reaction" does not mean that any curing reaction does not occur, but rather that the curing reaction occurring in the curable component (A) does not occur. In a preferred embodiment, component (A) may be a component that cures via a hydrosilylation reaction, or may be a polyorganosiloxane component (A') that cures via a hydrosilylation reaction. In another preferred embodiment, component (A) contains, for example, a polyorganosiloxane (a1) having an alkenyl group having 2 to 40 carbon atoms bonded to a silicon atom, a polyorganosiloxane (a2) having Si—H groups, and a platinum group metal catalyst (A2), as an example of component (A'). Here, the alkenyl group having 2 to 40 carbon atoms may be substituted. Examples of the substituent include a halogen atom, a nitro group, a cyano group, an amino group, a hydroxy group, a carboxyl group, an aryl group, and a heteroaryl group.

[0028] In another preferred embodiment, the polyorganosiloxane component (A') that cures via a hydrosilylation reaction is SiO ２ Siloxane units (Q units) represented by R １ R ２ R ３ SiO １／２ Siloxane units (M units) represented by R ４ R ５ SiO ２／２ Siloxane units (D units) represented by the formula: and R ６ SiO ３／２ and a platinum group metal catalyst (A2), wherein the polysiloxane (A1) contains one or more units selected from the group consisting of siloxane units (T units) represented by the following formula: ２ Siloxane units (Q′ units) represented by R １ 'R ２ 'R３ 'SiO １／２ Siloxane units (M′ units) represented by R ４ 'R ５ 'SiO ２／２ Siloxane units (D′ units) represented by the formula: ６ 'SiO ３／２ and a polyorganosiloxane (a1') containing at least one unit selected from the group consisting of M' units, D' units, and T' units, and SiO ２ Siloxane units (Q″ units) represented by R １ "R ２ "R ３ "SiO １／２ Siloxane units (M″ units) represented by R ４ "R ５ "SiO ２／２ Siloxane units (D″ units) represented by the formula: ６ "SiO ３／２ and a polyorganosiloxane (a2') containing one or more units selected from the group consisting of siloxane units (T" units) represented by the following formula: and containing at least one unit selected from the group consisting of M" units, D" units, and T" units. Note that (a1') is an example of (a1), and (a2') is an example of (a2).

[0029] R １ ~R ６ are groups or atoms bonded to the silicon atom, and each independently represents an optionally substituted alkyl group, an optionally substituted alkenyl group, or a hydrogen atom. Examples of the substituent include a halogen atom, a nitro group, a cyano group, an amino group, a hydroxyl group, a carboxyl group, an aryl group, and a heteroaryl group.

[0030] R １ '~R ６ R ′ is a group bonded to a silicon atom, and each independently represents an optionally substituted alkyl group or an optionally substituted alkenyl group. １ '~R ６At least one of the groups ' is an alkenyl group which may be substituted. Examples of the substituent include a halogen atom, a nitro group, a cyano group, an amino group, a hydroxy group, a carboxyl group, an aryl group, and a heteroaryl group.

[0031] R １ "~R ６ " are groups or atoms bonded to the silicon atom, and each independently represents an optionally substituted alkyl group or a hydrogen atom, but R １ "~R ６ At least one of " is a hydrogen atom. Examples of the substituent include a halogen atom, a nitro group, a cyano group, an amino group, a hydroxy group, a carboxyl group, an aryl group, and a heteroaryl group.

[0032] The alkyl group may be linear, branched, or cyclic, but is preferably a linear or branched alkyl group. The number of carbon atoms is not particularly limited, but is usually 1 to 40, preferably 30 or less, more preferably 20 or less, and even more preferably 10 or less.

[0033] As described above, the polysiloxane (A1) contains the polyorganosiloxane (a1') and the polyorganosiloxane (a2'), and the alkenyl group contained in the polyorganosiloxane (a1') and the hydrogen atom (Si-H group) contained in the polyorganosiloxane (a2') form a crosslinked structure by a hydrosilylation reaction with the platinum group metal catalyst (A2), and the crosslinked structure is cured. As a result, a cured film is formed.

[0034] The polyorganosiloxane (a1') contains one or more units selected from the group consisting of Q' units, M' units, D' units and T' units, and also contains at least one unit selected from the group consisting of M' units, D' units and T' units. As the polyorganosiloxane (a1'), two or more polyorganosiloxanes satisfying these conditions may be used in combination.

[0035] Preferred combinations of two or more selected from the group consisting of Q' units, M' units, D' units and T' units include, but are not limited to, (Q' units and M' units), (D' units and M' units), (T' units and M' units), and (Q' units, T' units and M' units).

[0036] In addition, when two or more types of polyorganosiloxanes are included in the polyorganosiloxane (a1'), a combination of (Q' units and M' units) and (D' units and M' units), a combination of (T' units and M' units) and (D' units and M' units), a combination of (Q' units, T' units and M' units) and (T' units and M' units) is preferred, but is not limited to these.

[0037] The polyorganosiloxane (a2') contains one or more units selected from the group consisting of Q" units, M" units, D" units, and T" units, and also contains at least one unit selected from the group consisting of M" units, D" units, and T" units. As the polyorganosiloxane (a2'), two or more polyorganosiloxanes satisfying these conditions may be used in combination.

[0038] In a preferred embodiment of the present invention, the adhesive composition contains a platinum group metal catalyst (A2) in addition to the polyorganosiloxane component (A'). Such a platinum group metal catalyst is a catalyst for promoting the hydrosilylation reaction between the alkenyl groups of the polyorganosiloxane (a1) and the Si—H groups of the polyorganosiloxane (a2).

[0039] Specific examples of platinum-based metal catalysts include, but are not limited to, platinum black, platinic chloride, chloroplatinic acid, reaction products of chloroplatinic acid and monohydric alcohols, complexes of chloroplatinic acid and olefins, and platinum bisacetoacetate. Examples of complexes of platinum and olefins include, but are not limited to, complexes of divinyltetramethyldisiloxane and platinum. The amount of the platinum group metal catalyst (A2) is not particularly limited, but is usually in the range of 1.0 to 50.0 ppm relative to the total amount of the polyorganosiloxane (a1) and the polyorganosiloxane (a2).

[0040] The adhesive composition according to the present invention may contain other components in addition to those described above. For example, the adhesive component may contain a polymerization inhibitor for the purpose of suppressing the progress of the hydrosilylation reaction. The polymerization inhibitor is not particularly limited as long as it can suppress the progress of the hydrosilylation reaction. Specific examples include alkynyl alcohols such as 1-ethynyl-1-cyclohexanol and 1,1-diphenyl-2-propyn-1-ol. The amount of the polymerization inhibitor is not particularly limited, but is typically 1,000.0 ppm or more relative to the total amount of polyorganosiloxane (a1) and polyorganosiloxane (a2) from the viewpoint of achieving the effect, and 10,000.0 ppm or less from the viewpoint of preventing excessive suppression of the hydrosilylation reaction.

[0041] (Laminate (Laminate of First Embodiment A)) As described above, the first embodiment A of the laminate according to the present invention is a laminate comprising, laminated in this order: a light-transmitting support substrate; a release agent layer for peeling by light irradiation; an adhesive layer; and an electronic device substrate having a semiconductor chip and a sealing layer for sealing the semiconductor chip.

[0042] The support substrate is optically transparent. The release agent layer for light-based peeling is provided between the adhesive layer and the electronic device substrate, and the support substrate. First embodiment A of the laminate is used in such a way that the electronic device substrate and the support substrate are peeled off after the release agent layer absorbs light irradiated from the support substrate side. The release agent layer for light-based peeling is a layer formed from a release agent composition for light-based peeling. The adhesive layer is a layer formed from the adhesive composition of the present invention described above.

[0043] The first embodiment A of the laminate of the present invention is used to manufacture a fan-out type semiconductor package.

[0044] <Support Substrate> The support substrate is not particularly limited as long as it is a member that is optically transparent to the light irradiated onto the release agent layer and can support an electronic device substrate having a semiconductor chip and a sealing layer that seals the semiconductor chip in order to produce a fan-out type semiconductor package, and examples thereof include a glass support substrate and a silicon support substrate.

[0045] The shape of the support substrate is not particularly limited, but may be, for example, a disk shape. The disk-shaped support substrate does not need to have a perfectly circular surface; for example, the outer periphery of the support substrate may have a straight line portion called an orientation flat, or a notch. The thickness of the disk-shaped support substrate may be determined appropriately depending on the size of the semiconductor substrate, and is not particularly limited, but is, for example, 500 to 1,000 μm. The diameter of the disk-shaped support substrate may be determined appropriately depending on the size of the semiconductor substrate, and is not particularly limited, but is, for example, 100 to 1,000 mm.

[0046] An example of the support substrate is a glass wafer or a silicon wafer having a diameter of about 300 mm and a thickness of about 700 μm.

[0047] <Release Agent Layer> The release agent layer is a layer formed from a release agent composition. The release agent layer is provided between the adhesive layer and the support substrate. The release agent layer is in contact with the support substrate.

[0048] The laminate of the first embodiment A is used in such a manner that the adhesive layer and the electronic device substrate are peeled off from the support substrate after the release agent layer absorbs light irradiated from the support substrate side.

[0049] <<Release Agent Composition>> The release agent composition contains, for example, at least an organic resin or a polynuclear phenol derivative, and further contains other components as necessary. The organic resin is preferably one that can exhibit suitable release ability, and when the semiconductor substrate and the support substrate are separated by irradiating the release agent layer with light, the organic resin is one that absorbs light and suitably undergoes a change in quality, such as decomposition, required to improve the release ability.

[0050] A laminate having a release agent layer formed from a release agent composition can be peeled off without applying an excessive load for peeling, for example, by irradiating the release agent layer with a laser. The release agent layer provided in the laminate has an adhesive strength that is reduced by, for example, laser irradiation compared to before irradiation. That is, in the laminate, for example, an electronic device substrate is suitably supported on a laser-transmitting support substrate via an adhesive layer and a release agent layer, and by irradiating the support substrate with a laser, the laser that has transmitted through the support substrate is absorbed by the release agent layer, causing alteration (e.g., separation) of the release agent layer at the interface between the release agent layer and the adhesive layer, at the interface between the release agent layer and the support substrate, or inside the release agent layer. As a result, suitable peeling (separation) can be achieved without applying an excessive load for peeling.

[0051] Examples of organic resins include novolac resins, etc. Details of these will be described later.

[0052] In a preferred embodiment, the release agent composition contains at least a novolac resin, and further contains other components such as a crosslinker, an acid generator, an acid, a surfactant, a solvent, etc., as needed. In another preferred embodiment, the release agent composition contains at least a polynuclear phenol derivative and a crosslinker, and further contains other components such as an acid generator, an acid, a surfactant, a solvent, etc. In another preferred embodiment, the release agent composition contains at least an organic resin and a branched-chain polysilane, and further contains other components such as a crosslinker, an acid generator, an acid, a surfactant, a solvent, etc., as needed.

[0053] <<<Novolac Resin>>> A novolac resin is a resin obtained by, for example, subjecting at least one of a phenolic compound, a carbazole compound, and an aromatic amine compound to a condensation reaction with at least one of an aldehyde compound, a ketone compound, and a divinyl compound in the presence of an acid catalyst.

[0054] Examples of phenolic compounds include phenols, naphthols, anthrols, and hydroxypyrenes. Examples of phenols include phenol, cresol, xylenol, resorcinol, bisphenol A, p-tert-butylphenol, p-octylphenol, 9,9-bis(4-hydroxyphenyl)fluorene, and 1,1,2,2-tetrakis(4-hydroxyphenyl)ethane. Examples of naphthols include 1-naphthol, 2-naphthol, 1,5-dihydroxynaphthalene, 2,7-dihydroxynaphthalene, and 9,9-bis(6-hydroxynaphthyl)fluorene. Examples of anthrols include 9-anthrole. Examples of hydroxypyrenes include 1-hydroxypyrene and 2-hydroxypyrene. Examples of the carbazole compound include carbazole, 1,3,6,8-tetranitrocarbazole, 3,6-diaminocarbazole, 3,6-dibromo-9-ethylcarbazole, 3,6-dibromo-9-phenylcarbazole, 3,6-dibromocarbazole, 3,6-dichlorocarbazole, 3-amino-9-ethylcarbazole, 3-bromo-9-ethylcarbazole, 4,4'-bis(9H-carbazol-9-yl)biphenyl, 4-glycidylcarbazole, 4-hydroxycarbazole, 9-(1H-benzotriazol-1-yl)methylcarbazole, 4 ... Examples of aromatic amine compounds include diphenylamine and N-phenyl-1-naphthylamine. These compounds may be used alone or in combination of two or more. These compounds may have a substituent.For example, they may have a substituent on the aromatic ring.

[0055] Examples of aldehyde compounds include formaldehyde, paraformaldehyde, acetaldehyde, propylaldehyde, butyraldehyde, isobutyraldehyde, valeraldehyde, capronaldehyde, 2-methylbutyraldehyde, hexylaldehyde, undecanoic aldehyde, 7-methoxy-3,7-dimethyloctyl aldehyde, cyclohexane aldehyde, 3-methyl-2-butyraldehyde, glyoxal, malonaldehyde, succinaldehyde, glutaraldehyde, and adipic acid. Examples of the ketone compound include saturated aliphatic aldehydes such as benzoic acid aldehyde, unsaturated aliphatic aldehydes such as acrolein and methacrolein, heterocyclic aldehydes such as furfural and pyridine aldehyde, and aromatic aldehydes such as benzaldehyde, naphthyl aldehyde, anthryl aldehyde, phenanthryl aldehyde, salicyl aldehyde, phenylacetaldehyde, 3-phenylpropionaldehyde, tolyl aldehyde, (N,N-dimethylamino)benzaldehyde, and acetoxybenzaldehyde. Among these, aromatic aldehydes are preferred. Examples of the ketone compound include diaryl ketone compounds such as diphenyl ketone, phenyl naphthyl ketone, dinaphthyl ketone, phenyl tolyl ketone, and ditolyl ketone. Examples of divinyl compounds include divinylbenzene, dicyclopentadiene, tetrahydroindene, 4-vinylcyclohexene, 5-vinylnoborna-2-ene, divinylpyrene, limonene, 5-vinylnorbornadiene, etc. These can be used alone or in combination of two or more.

[0056] The novolac resin is, for example, a novolac resin that absorbs light irradiated from the support substrate side and changes in quality, for example, by photolysis.

[0057] The novolac resin contains, for example, at least one of a structural unit represented by the following formula (C1-1), a structural unit represented by the following formula (C1-2), and a structural unit represented by the following formula (C1-3).

[0058]

[0059] In the formula, C １ represents a group derived from an aromatic compound containing a nitrogen atom, C ２ represents a group containing a tertiary carbon atom having at least one member selected from the group consisting of a secondary carbon atom, a quaternary carbon atom, and an aromatic ring in a side chain, and C ３ represents a group derived from an aliphatic polycyclic compound, C ４ represents a group derived from phenol, a group derived from bisphenol, a group derived from naphthol, a group derived from biphenyl, or a group derived from biphenol.

[0060] That is, the novolac resin contains, for example, one or more of the following structural units: A structural unit having a bond between a group derived from an aromatic compound containing a nitrogen atom and a group containing a tertiary carbon atom having at least one carbon atom selected from the group consisting of a secondary carbon atom, a quaternary carbon atom, and an aromatic ring in its side chain (formula (C1-1)); A structural unit having a bond between a group derived from an aromatic compound containing a nitrogen atom and a group derived from an aliphatic polycyclic compound (formula (C1-2)); A structural unit having a bond between a group derived from a phenol, a group derived from a bisphenol, a group derived from a naphthol, a group derived from a biphenyl, or a group derived from a biphenol and a group containing a tertiary carbon atom having at least one carbon atom selected from the group consisting of a quaternary carbon atom and an aromatic ring in its side chain (formula (C1-3)).

[0061] In a preferred embodiment, the novolak resin contains either or both of a structural unit (formula (C1-1)) having a bond between a group derived from an aromatic compound containing a nitrogen atom and a group containing a tertiary carbon atom having at least one kind selected from the group consisting of a secondary carbon atom, a quaternary carbon atom, and an aromatic ring in its side chain, and a structural unit (formula (C1-2)) having a bond between a group derived from an aromatic compound containing a nitrogen atom and a group derived from an aliphatic polycyclic compound.

[0062] C １ Examples of the group derived from an aromatic compound containing a nitrogen atom include, but are not limited to, a group derived from carbazole, a group derived from N-phenyl-1-naphthylamine, and a group derived from N-phenyl-2-naphthylamine.２ Examples of the group containing a tertiary carbon atom having at least one selected from the group consisting of a secondary carbon atom, a quaternary carbon atom, and an aromatic ring in a side chain include, but are not limited to, a group derived from 1-naphthaldehyde, a group derived from 1-pyrenecarboxaldehyde, a group derived from 4-(trifluoromethyl)benzaldehyde, and a group derived from acetaldehyde. ３ The group derived from an aliphatic polycyclic compound of can be, but is not limited to, a group derived from dicyclopentadiene. ４ is a group derived from phenol, a group derived from bisphenol, a group derived from naphthol, a group derived from biphenyl, or a group derived from biphenol.

[0063] In a preferred embodiment, the novolak resin contains, as the structural unit represented by formula (C1-1), for example, a structural unit represented by formula (C1-1-1) below.

[0064]

[0065] In formula (C1-1-1), R ９０１ and R ９０２ represents a substituent substituted on the ring, and each independently represents a halogen atom, a nitro group, a cyano group, an amino group, a hydroxy group, a carboxy group, an optionally substituted alkyl group, an optionally substituted alkenyl group, or an optionally substituted aryl group. ９０３ represents a hydrogen atom, an optionally substituted alkyl group, an optionally substituted alkenyl group, or an optionally substituted aryl group. ９０４ represents a hydrogen atom, an optionally substituted aryl group, or an optionally substituted heteroaryl group. ９０５ represents an optionally substituted alkyl group, an optionally substituted aryl group, or an optionally substituted heteroaryl group. ９０４ and R ９０５The groups may be bonded to each other to form a divalent group. Examples of substituents on the alkyl and alkenyl groups include halogen atoms, nitro groups, cyano groups, amino groups, hydroxy groups, carboxy groups, aryl groups, and heteroaryl groups. Examples of substituents on the aryl and heteroaryl groups include halogen atoms, nitro groups, cyano groups, amino groups, hydroxy groups, carboxy groups, alkyl groups, and alkenyl groups. １ and h ２ each independently represents an integer of 0 to 3.

[0066] The number of carbon atoms in the optionally substituted alkyl group and the optionally substituted alkenyl group is usually 40 or less, and from the viewpoint of solubility, it is preferably 30 or less, more preferably 20 or less. The number of carbon atoms in the optionally substituted aryl group and heteroaryl group is usually 40 or less, and from the viewpoint of solubility, it is preferably 30 or less, more preferably 20 or less.

[0067] Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.

[0068] Specific examples of the optionally substituted alkyl group include a methyl group, an ethyl group, an n-propyl group, an i-propyl group, an n-butyl group, an i-butyl group, an s-butyl group, a t-butyl group, an n-pentyl group, a 1-methyl-n-butyl group, a 2-methyl-n-butyl group, a 3-methyl-n-butyl group, a 1,1-dimethyl-n-propyl group, a 1,2-dimethyl-n-propyl group, a 2,2-dimethyl-n-propyl group, a 1-ethyl-n-propyl group, an n-hexyl group, a 1-methyl-n-pentyl group, a 2-methyl-n-pentyl group, and a 3-methyl-n-pentyl group. Examples of such alkyl groups include, but are not limited to, a 4-methyl-n-pentyl group, a 1,1-dimethyl-n-butyl group, a 1,2-dimethyl-n-butyl group, a 1,3-dimethyl-n-butyl group, a 2,2-dimethyl-n-butyl group, a 2,3-dimethyl-n-butyl group, a 3,3-dimethyl-n-butyl group, a 1-ethyl-n-butyl group, a 2-ethyl-n-butyl group, a 1,1,2-trimethyl-n-propyl group, a 1,2,2-trimethyl-n-propyl group, a 1-ethyl-1-methyl-n-propyl group, and a 1-ethyl-2-methyl-n-propyl group.

[0069] Specific examples of the optionally substituted alkenyl group include ethenyl, 1-propenyl, 2-propenyl, 1-methyl-1-ethenyl, 1-butenyl, 2-butenyl, 3-butenyl, 2-methyl-1-propenyl, 2-methyl-2-propenyl, 1-ethylethenyl, 1-methyl-1-propenyl, 1-methyl-2-propenyl, 1-pentenyl, 2-pentenyl, 3-pentenyl, 4-pentenyl, 1-n-propylethenyl, 1-methyl-1-butenyl, 1-methyl-2-butenyl, and 1-methyl-3-butenyl. nyl group, 2-ethyl-2-propenyl group, 2-methyl-1-butenyl group, 2-methyl-2-butenyl group, 2-methyl-3-butenyl group, 3-methyl-1-butenyl group, 3-methyl-2-butenyl group, 3-methyl-3-butenyl group, 1,1-dimethyl-2-propenyl group, 1-i-propylethenyl group, 1,2-dimethyl-1-propenyl group, 1,2-dimethyl-2-propenyl group, 1-cyclopentenyl group, 2-cyclopentenyl group, 3-cyclopentenyl group, 1-hexenyl group, 2-hexenyl group, 3-hexenyl group, 4-hexenyl group, 5-hexenyl group xenyl group, 1-methyl-1-pentenyl group, 1-methyl-2-pentenyl group, 1-methyl-3-pentenyl group, 1-methyl-4-pentenyl group, 1-n-butylethenyl group, 2-methyl-1-pentenyl group, 2-methyl-2-pentenyl group, 2-methyl-3-pentenyl group, 2-methyl-4-pentenyl group, 2-n-propyl-2-propenyl group, 3-methyl-1-pentenyl group, 3-methyl-2-pentenyl group, 3-methyl-3-pentenyl group, 3-methyl-4-pentenyl group, 3-ethyl-3-butenyl group, 4-methyl-1-pentenyl group, 4-methyl-2-pentenyl group, 4-methyl-3-pentenyl group, 4-methyl-4-pentenyl group, 1,1-dimethyl-2-butenyl group, 1,1-dimethyl-3-butenyl group, 1,2-dimethyl-1-butenyl group, 1,2-dimethyl-2-butenyl group, 1,2-dimethyl-3-butenyl group, 1-methyl-2-ethyl-2-propenyl group, 1-s-butylethenyl group, 1,3-dimethyl-1-butenyl group, 1,3-dimethyl-2-butenyl group, 1,3-dimethyl-3-butenyl group, 1-i-butylethenyl group, 2,2-dimethyl-3-butenyl group,3-dimethyl-1-butenyl group, 2,3-dimethyl-2-butenyl group, 2,3-dimethyl-3-butenyl group, 2-i-propyl-2-propenyl group, 3,3-dimethyl-1-butenyl group, 1-ethyl-1-butenyl group, 1-ethyl-2-butenyl group, 1-ethyl-3-butenyl group, 1-n-propyl-1-propenyl group, 1-n-propyl-2-propenyl group, 2-ethyl-1-butenyl group, 2-ethyl-2-butenyl group, 2-ethyl-3-butenyl group, 1,1,2-trimethyl-2-propenyl group, 1-tert-butylethenyl group, 1-methyl-1-ethyl-2-propenyl group, 1-ethyl-2-methyl-1-propenyl group, 1-ethyl-2-methyl-2-propenyl group, 1-i-propyl-1-propenyl group , 1-i-propyl-2-propenyl group, 1-methyl-2-cyclopentenyl group, 1-methyl-3-cyclopentenyl group, 2-methyl-1-cyclopentenyl group, 2-methyl-2-cyclopentenyl group, 2-methyl-3-cyclopentenyl group, 2-methyl-4-cyclopentenyl group, 2-methyl-5-cyclopentenyl group, 2-methylene-cyclopentyl group, 3-methyl-1-cyclopentenyl group, 3-methyl-2-cyclopentenyl group, 3-methyl-3-cyclopentenyl group, 3-methyl-4-cyclopentenyl group, 3-methyl-5-cyclopentenyl group, 3-methylene-cyclopentyl group, 1-cyclohexenyl group, 2-cyclohexenyl group, 3-cyclohexenyl group, and the like.

[0070] Specific examples of the optionally substituted aryl group include, but are not limited to, a phenyl group, a 2-methylphenyl group, a 3-methylphenyl group, a 4-methylphenyl group, a 2-chlorophenyl group, a 3-chlorophenyl group, a 4-chlorophenyl group, a 2-fluorophenyl group, a 3-fluorophenyl group, a 4-fluorophenyl group, a 4-methoxyphenyl group, a 4-ethoxyphenyl group, a 4-nitrophenyl group, a 4-cyanophenyl group, a 1-naphthyl group, a 2-naphthyl group, a biphenyl-4-yl group, a biphenyl-3-yl group, a biphenyl-2-yl group, a 1-anthryl group, a 2-anthryl group, a 9-anthryl group, a 1-phenanthryl group, a 2-phenanthryl group, a 3-phenanthryl group, a 4-phenanthryl group, and a 9-phenanthryl group.

[0071] Specific examples of the optionally substituted heteroaryl group include, but are not limited to, a 2-thienyl group, a 3-thienyl group, a 2-furanyl group, a 3-furanyl group, a 2-oxazolyl group, a 4-oxazolyl group, a 5-oxazolyl group, a 3-isoxazolyl group, a 4-isoxazolyl group, a 5-isoxazolyl group, a 2-thiazolyl group, a 4-thiazolyl group, a 5-thiazolyl group, a 3-isothiazolyl group, a 4-isothiazolyl group, a 5-isothiazolyl group, and the like.

[0072] As described above, novolac resins are resins obtained by, for example, condensation reaction of at least one of a phenolic compound, a carbazole compound, and an aromatic amine compound with at least one of an aldehyde compound, a ketone compound, and a divinyl compound in the presence of an acid catalyst. In this condensation reaction, for example, 0.1 to 10 equivalents of the aldehyde compound or ketone compound are typically used per equivalent of the benzene ring constituting the ring of the carbazole compound.

[0073] In the condensation reaction, an acid catalyst is usually used. Examples of the acid catalyst include, but are not limited to, mineral acids such as sulfuric acid, phosphoric acid, and perchloric acid; organic sulfonic acids such as p-toluenesulfonic acid and p-toluenesulfonic acid monohydrate; and carboxylic acids such as formic acid and oxalic acid. The amount of the acid catalyst cannot be generally specified because it is determined appropriately depending on the type of acid used, etc., but is usually determined appropriately in the range of 0.001 to 10,000 parts by mass per 100 parts by mass of the carbazole compound.

[0074] The condensation reaction can be carried out without a solvent if either the starting compounds or the acid catalyst used are liquid, but is usually carried out using a solvent. Such a solvent is not particularly limited as long as it does not inhibit the reaction, and typical examples include ether compounds such as cyclic ether compounds such as tetrahydrofuran and dioxane.

[0075] The reaction temperature is usually appropriately set within the range of 40° C. to 200° C. The reaction time cannot be generally defined since it varies depending on the reaction temperature, but is usually appropriately set within the range of 30 minutes to 50 hours.

[0076] After the reaction is completed, if necessary, purification and isolation are carried out according to a standard method, and the obtained novolak resin is used for preparing a release agent composition. A person skilled in the art can determine the production conditions of the novolak resin without undue burden based on the above explanation and technical common sense, and therefore can produce the novolak resin.

[0077] The weight-average molecular weight of the organic resin such as a novolac resin is usually 500 to 200,000. From the viewpoint of ensuring solubility in a solvent, mixing well with the branched-chain polysilane when formed into a film, and obtaining a uniform film, the weight-average molecular weight is preferably 100,000 or less, more preferably 50,000 or less, even more preferably 10,000 or less, still more preferably 5,000 or less, and still more preferably 3,000 or less. From the viewpoint of improving the strength of the film, the weight-average molecular weight is preferably 600 or more, more preferably 700 or more, even more preferably 800 or more, still more preferably 900 or more, and still more preferably 1,000 or more. In the present invention, the weight average molecular weight, number average molecular weight, and dispersity of an organic resin such as a polymer novolac resin can be measured, for example, using a GPC apparatus (EcoSEC, HLC-8320GPC, manufactured by Tosoh Corporation) and a GPC column (TSKgel SuperMultiporeHZ-N, TSKgel SuperMultiporeHZ-H, manufactured by Tosoh Corporation), at a column temperature of 40°C, using tetrahydrofuran as an eluent (elution solvent), at a flow rate (flow rate) of 0.35 mL / min, and using polystyrene (manufactured by Sigma-Aldrich) as a standard sample.

[0078] The organic resin contained in the release agent composition is preferably a novolac resin, and therefore, the release agent composition preferably contains only a novolac resin as the organic resin, but may contain other polymers together with the novolac resin for the purpose of adjusting the film properties, etc. Examples of such other polymers include polyacrylic acid ester compounds, polymethacrylic acid ester compounds, polyacrylamide compounds, polymethacrylamide compounds, polyvinyl compounds, polystyrene compounds, polymaleimide compounds, polymaleic anhydrides, polyacrylonitrile compounds, etc.

[0079] The content of the novolac resin in the release agent composition is not particularly limited, but is preferably 70% by mass or more based on the total amount of polymers contained in the release agent composition. The content of the novolac resin in the release agent composition is not particularly limited, but is preferably 50 to 100% by mass based on the film-constituting components. In the present invention, the film-constituting components refer to components other than the solvent contained in the composition.

[0080] <<<Polynuclear Phenol Derivative>>> The polynuclear phenol derivative is represented, for example, by formula (P) below.

[0081] In formula (P), Ar represents an arylene group, and the number of carbon atoms therein is not particularly limited, but is usually 6 to 60. From the viewpoint of preparing a release agent composition having excellent uniformity and reproducibly obtaining a release agent layer having higher flatness, the number of carbon atoms therein is preferably 30 or less, more preferably 20 or less, even more preferably 18 or less, and still more preferably 12 or less.

[0082] Specific examples of such an arylene group include 1,2-phenylene, 1,3-phenylene, 1,4-phenylene; 1,5-naphthalenediyl, 1,8-naphthalenediyl, 2,6-naphthalenediyl, 2,7-naphthalenediyl, 1,2-anthracenediyl, 1,3-anthracenediyl, 1,4-anthracenediyl, 1,5-anthracenediyl, 1,6-anthracenediyl, 1,7-anthracenediyl, 1,8-anthracenediyl, and 2,3-anthracenediyl. Examples of the anthracene-4,4′-diyl group include, but are not limited to, groups derived by removing two hydrogen atoms on the aromatic ring of a fused-ring aromatic hydrocarbon compound, such as anthracene-4,6-diyl, 2,7-anthracene-4,9-diyl, 2,10-anthracene-4,10-diyl, and 9,10-anthracene-4,4′-diyl group, and groups derived by removing two hydrogen atoms on the aromatic ring of a biphenyl-4,4′-diyl group and para-terphenyl-4,4″-diyl group.

[0083] The content of the polynuclear phenol derivative in the stripping composition is not particularly limited, but is preferably 50 to 100% by mass based on the film-constituting components.

[0084] <<<Branched Polysilane>>> The release agent composition may contain a branched polysilane. The branched polysilane has a Si-Si bond and a branched structure. By including a branched polysilane in the release agent composition, the release agent layer formed from the obtained film cannot be suitably removed by any of organic solvents, acids, and chemical solutions used in the production of semiconductor elements (such as alkaline developers and hydrogen peroxide solutions), but can be suitably removed by the cleaning composition. As a result, by separating the semiconductor substrate and support substrate of the laminate and then cleaning each substrate with the cleaning composition, the residue of the release agent layer on the substrate can be suitably removed. Although the reason for this is not clear, depending on the type of polysilane terminal group (terminal substituent (atom)), the polysilane can react with an organic resin to form crosslinks. Furthermore, since branched-chain polysilanes have more terminal groups (terminal substituent (atom)) than linear polysilanes, branched-chain polysilanes are thought to have more crosslinking points than linear polysilanes. It is speculated that moderate and suitable curing via such more crosslinking points in the branched-chain polysilanes can achieve both the property of being resistant to removal by organic solvents, acids, and chemical solutions used in the production of semiconductor devices (such as alkaline developers and hydrogen peroxide solutions), and the property of being easily removed by cleaning compositions.

[0085] The branched polysilane preferably contains a structural unit represented by formula (B).

[0086]

[0087] In formula (B), R Ｂrepresents a hydrogen atom, a hydroxy group, a silyl group, or an organic group, and specific examples of such organic groups include hydrocarbon groups (optionally substituted alkyl groups, optionally substituted alkenyl groups, optionally substituted aryl groups, and optionally substituted aralkyl groups), and ether groups corresponding to these hydrocarbon groups (optionally substituted alkoxy groups, optionally substituted aryloxy groups, and optionally substituted aralkyloxy groups), and the organic group is usually often a hydrocarbon group such as an alkyl group, alkenyl group, aryl group, or aralkyl group. Furthermore, a hydrogen atom, a hydroxy group, an alkoxy group, a silyl group, or the like is often substituted at the terminal.

[0088] The optionally substituted alkyl group may be linear, branched, or cyclic. Specific examples of the optionally substituted linear or branched alkyl group include a methyl group, an ethyl group, an n-propyl group, an i-propyl group, an n-butyl group, an i-butyl group, an s-butyl group, a tertiary butyl group, an n-pentyl group, a 1-methyl-n-butyl group, a 2-methyl-n-butyl group, a 3-methyl-n-butyl group, a 1,1-dimethyl-n-propyl group, a 1,2-dimethyl-n-propyl group, a 2,2-dimethyl-n-propyl group, a 1-ethyl-n-propyl group, an n-hexyl group, a 1-methyl-n-pentyl group, a 2-methyl-n-pentyl group, a 3-methyl-n-pentyl group, a 4-methyl-n-pentyl group, a 5-methyl-n-pentyl group, a 6-methyl-n-pentyl group, a 7-methyl-n-pentyl group, a 8-methyl-n-pentyl group, a 9-methyl-n-pentyl group, a 10-methyl-n-pentyl group, a 11-methyl-n-pentyl group, a 12-methyl-n-pentyl group, a 13-methyl-n-pentyl group, a 14-methyl-n-pentyl group, a 15-methyl-n-pentyl group, a 16-methyl-n-pentyl group, a 17-methyl-n-pentyl group, a 18-methyl-n-pentyl group, a 19-methyl-n-pentyl group, a 20-methyl-n-pentyl group, a 21-methyl-n-pentyl group, a 22-methyl-n-pentyl group, a 23-methyl-n-pentyl group, a 24-methyl-n-pentyl group, a 25-methyl-n-pentyl group, a 26-methyl-n-pentyl group, a 2 Examples of alkyl groups include, but are not limited to, ethyl, 1,1-dimethyl-n-butyl, 1,2-dimethyl-n-butyl, 1,3-dimethyl-n-butyl, 2,2-dimethyl-n-butyl, 2,3-dimethyl-n-butyl, 3,3-dimethyl-n-butyl, 1-ethyl-n-butyl, 2-ethyl-n-butyl, 1,1,2-trimethyl-n-propyl, 1,2,2-trimethyl-n-propyl, 1-ethyl-1-methyl-n-propyl, and 1-ethyl-2-methyl-n-propyl groups. The number of carbon atoms is usually 1 to 14, preferably 1 to 10, and more preferably 1 to 6.Specific examples of the optionally substituted cyclic alkyl group include a cyclopropyl group, a cyclobutyl group, a 1-methylcyclopropyl group, a 2-methylcyclopropyl group, a cyclopentyl group, a 1-methylcyclobutyl group, a 2-methylcyclobutyl group, a 3-methylcyclobutyl group, a 1,2-dimethylcyclopropyl group, a 2,3-dimethylcyclopropyl group, a 1-ethylcyclopropyl group, a 2-ethylcyclopropyl group, a cyclohexyl group, a 1-methylcyclopentyl group, a 2-methylcyclopentyl group, a 3-methylcyclopentyl group, a 1-ethylcyclobutyl group, a 2-ethylcyclobutyl group, a 3-ethylcyclobutyl group, a 1,2-dimethylcyclobutyl group, a 1,3-dimethylcyclobutyl group, a 2,2-dimethylcyclobutyl group, a 2,3-dimethylcyclobutyl group, a 2,4-dimethylcyclobutyl group, a 3,3- Examples of cycloalkyl groups include dimethyl-cyclobutyl group, 1-n-propyl-cyclopropyl group, 2-n-propyl-cyclopropyl group, 1-i-propyl-cyclopropyl group, 2-i-propyl-cyclopropyl group, 1,2,2-trimethyl-cyclopropyl group, 1,2,3-trimethyl-cyclopropyl group, 2,2,3-trimethyl-cyclopropyl group, 1-ethyl-2-methyl-cyclopropyl group, 2-ethyl-1-methyl-cyclopropyl group, 2-ethyl-2-methyl-cyclopropyl group, and 2-ethyl-3-methyl-cyclopropyl group; and bicycloalkyl groups such as bicyclobutyl group, bicyclopentyl group, bicyclohexyl group, bicycloheptyl group, bicyclooctyl group, bicyclononyl group, and bicyclodecyl group, but are not limited to these. The number of carbon atoms is usually 3 to 14, preferably 4 to 10, and more preferably 5 to 6.

[0089] The alkenyl group may be linear, branched, or cyclic. Specific examples of optionally substituted linear or branched alkenyl groups include, but are not limited to, vinyl, allyl, butenyl, and pentenyl groups, and the number of carbon atoms is usually 2 to 14, preferably 2 to 10, and more preferably 1 to 6. Specific examples of optionally substituted cyclic alkenyl groups include, but are not limited to, cyclopentenyl and cyclohexenyl, and the number of carbon atoms is usually 4 to 14, preferably 5 to 10, and more preferably 5 to 6.

[0090] Specific examples of the optionally substituted aryl group include, but are not limited to, a phenyl group, a 4-methylphenyl group, a 3-methylphenyl group, a 2-methylphenyl group, a 3,5-dimethylphenyl group, a 1-naphthyl group, and a 2-naphthyl group, and the number of carbon atoms thereof is usually 6 to 20, preferably 6 to 14, and more preferably 6 to 12.

[0091] Specific examples of the optionally substituted aralkyl group include, but are not limited to, a benzyl group, a phenethyl group, a phenylpropyl group, etc. The optionally substituted aralkyl group is preferably a group in which one hydrogen atom of an alkyl group having 1 to 4 carbon atoms is substituted with an aryl group having 6 to 20 carbon atoms.

[0092] The alkyl moiety of the optionally substituted alkoxy group may be linear, branched, or cyclic. Specific examples of the optionally substituted linear or branched alkoxy group include, but are not limited to, a methoxy group, an ethoxy group, a propoxy group, an isopropoxy group, a butoxy group, a t-butoxy group, and a pentyloxy group, and the number of carbon atoms is usually 1 to 14, preferably 1 to 10, and more preferably 1 to 6. Specific examples of the optionally substituted cyclic alkoxy group include, but are not limited to, cyclopentyloxy and cyclohexyloxy, and the number of carbon atoms is usually 3 to 14, preferably 4 to 10, and more preferably 5 to 6.

[0093] Specific examples of the optionally substituted aryloxy group include, but are not limited to, phenoxy, 1-naphthyloxy, and 2-naphthyloxy, and the number of carbon atoms thereof is usually 6 to 20, preferably 6 to 14, and more preferably 6 to 10.

[0094] Specific examples of the optionally substituted aralkyloxy group include, but are not limited to, benzyloxy, phenethyloxy, phenylpropyloxy, etc. The optionally substituted aralkyloxy group is preferably a group in which one hydrogen atom of an alkyloxy group having 1 to 4 carbon atoms is substituted with an aryl group having 6 to 20 carbon atoms.

[0095] Specific examples of the silyl group include, but are not limited to, a silyl group, a disilanyl group, a trisilanyl group, and the like. The number of silicon atoms is usually 1 to 10, preferably 1 to 6.

[0096] R Ｂ When is the organic group or silyl group, at least one of the hydrogen atoms may be substituted with a substituent, specific examples of which include a hydroxy group, an alkyl group, an aryl group, and an alkoxy group.

[0097] From the viewpoint of preventing unintended peeling when the laminate is brought into contact with an organic solvent, an acid, or a chemical solution used in the manufacture of semiconductor elements (such as an alkaline developer or hydrogen peroxide solution), and from the viewpoint of suitably removing residues of the release agent layer on the substrate when the semiconductor substrate and the support substrate of the laminate are separated and then washed with the cleaning agent composition, R Ｂ is preferably an alkyl group or an aryl group, more preferably an aryl group, even more preferably a phenyl group, a 1-naphthyl group or a 2-naphthyl group, and even more preferably a phenyl group.

[0098] <<<Crosslinking Agent>>> The release agent composition may contain a crosslinking agent. The crosslinking agent may undergo a crosslinking reaction by self-condensation, but when crosslinkable substituents are present in the novolak resin, the crosslinking agent can undergo a crosslinking reaction with the crosslinkable substituents.

[0099] Specific examples of crosslinking agents are not particularly limited, but typically include phenol-based crosslinking agents, melamine-based crosslinking agents, urea-based crosslinking agents, and thiourea-based crosslinking agents, each of which has a crosslinking group, such as an alkoxymethyl group (e.g., hydroxymethyl group, methoxymethyl group, or butoxymethyl group), in the molecule; these may be low-molecular-weight compounds or high-molecular-weight compounds. The crosslinking agent contained in the release agent composition usually has two or more crosslinking groups, but from the viewpoint of achieving more suitable curing with good reproducibility, the number of crosslinking groups contained in the crosslinking agent compound is preferably 2 to 10, and more preferably 2 to 6. From the viewpoint of achieving higher heat resistance, the crosslinking agent contained in the release agent composition preferably has an aromatic ring (e.g., a benzene ring or a naphthalene ring) in the molecule; a typical example of such a crosslinking agent includes, but is not limited to, a phenol-based crosslinking agent.

[0100] A phenolic crosslinking agent having a crosslinking group is a compound having a crosslinking group bonded to an aromatic ring and at least one of a phenolic hydroxy group and an alkoxy group derived from the phenolic hydroxy group. Examples of the alkoxy group derived from the phenolic hydroxy group include, but are not limited to, a methoxy group and a butoxy group. The aromatic ring to which the crosslinking group is bonded and the aromatic ring to which the phenolic hydroxy group and / or the alkoxy group derived from the phenolic hydroxy group are bonded are not limited to non-fused aromatic rings such as a benzene ring, but may also be a fused aromatic ring such as a naphthalene ring or anthracene ring. When multiple aromatic rings are present in the molecule of the phenolic crosslinking agent, the crosslinking group, the phenolic hydroxy group, and the alkoxy group derived from the phenolic hydroxy group may be bonded to the same aromatic ring or to different aromatic rings in the molecule. The aromatic ring to which the crosslinking group, the phenolic hydroxy group, and the alkoxy group derived from the phenolic hydroxy group are bonded may be further substituted with a hydrocarbon group such as an alkyl group (e.g., methyl, ethyl, or butyl), an aryl group (e.g., phenyl), or a halogen atom (e.g., fluorine).

[0101] <<<Acid Generator and Acid>>> The stripping composition may contain an acid generator or an acid for the purpose of promoting the crosslinking reaction or the like.

[0102] Examples of the acid generator include thermal acid generators and photoacid generators. The thermal acid generator is not particularly limited as long as it generates an acid by heat, and specific examples include, but are not limited to, 2,4,4,6-tetrabromocyclohexadienone, benzoin tosylate, 2-nitrobenzyl tosylate, K-PURE (registered trademark) CXC-1612, CXC-1614, TAG-2172, TAG-2179, TAG-2678, TAG2689, and TAG2700 (manufactured by King Industries), and SI-45, SI-60, SI-80, SI-100, SI-110, and SI-150 (manufactured by Sanshin Chemical Industry Co., Ltd.), and other organic sulfonic acid alkyl esters.

[0103] Examples of the photoacid generator include an onium salt compound, a sulfonimide compound, and a disulfonyldiazomethane compound.

[0104] <<<Surfactant>>> The stripper composition may contain a surfactant for the purposes of adjusting the liquid properties of the composition itself and the film properties of the resulting film, and for preparing a highly uniform stripper composition with good reproducibility.

[0105] <<<Solvent>>> The stripper composition preferably contains a solvent.

[0106] The thickness of the release agent layer is not particularly limited, but is usually 0.05 to 5 μm. From the viewpoint of maintaining film strength, the thickness is preferably 0.07 μm or more, more preferably 0.1 μm or more, and even more preferably 0.2 μm or more. From the viewpoint of avoiding non-uniformity due to a thick film, the thickness is preferably 4 μm or less, more preferably 3 μm or less, even more preferably 1.5 μm or less, and even more preferably 1.0 μm or less.

[0107] <Adhesive Layer> The adhesive layer is a layer formed from the adhesive composition of the present invention. The adhesive layer is provided between the release agent layer and the electronic device substrate.

[0108] The thickness of the adhesive layer is not particularly limited as long as it is a thin film of 10 μm or less and may be appropriately selected depending on the purpose, but for example, it is more preferably 8 μm or less, and even more preferably 5 μm or less, and more preferably 0.1 μm or more, and even more preferably 1 μm or more.

[0109] The adhesive composition of the present invention can form an adhesive layer with reduced defects even when the adhesive layer is thin. Because a thin adhesive layer can be formed, any residue of the adhesive layer remaining on the electronic device substrate after the electronic device substrate and the support substrate are peeled off can be quickly and cleanly removed.

[0110] <Electronic Device Substrate> An electronic device substrate having a semiconductor chip and a sealing layer for sealing the semiconductor chip is formed on the adhesive layer.

[0111] <<Semiconductor Chip>> The type of semiconductor chip is not particularly limited, and may be an active element or a passive element, or multiple types of elements may be mounted. Examples of active elements include transistors, ICs, LSIs (Large-Scale Integration), MEMS (Micro Electro Mechanical Systems), relays, LED displays, LED lighting, light-emitting elements such as OLEDs, sensors, etc. Examples of passive elements include resistors, capacitors, inductors, piezoelectric elements, batteries, etc. The number of semiconductor chips mounted on the adhesive layer is not particularly limited, and any number of semiconductor chips can be mounted.

[0112] <<Encapsulating Layer>> The encapsulating layer can be formed by encapsulating the semiconductor chip with an encapsulating material. The encapsulating material for encapsulating the semiconductor chip is a material capable of insulating or encapsulating a metal or semiconductor component. In the present invention, for example, a resin composition (encapsulating resin) is used as the encapsulating material. The type of encapsulating resin is not particularly limited as long as it is capable of encapsulating and / or insulating a metal or semiconductor. For example, an epoxy-based resin or a silicone-based resin is preferably used. The encapsulating material may contain other components, such as a filler, in addition to the resin component. Examples of fillers include spherical silica particles. In the encapsulating process, the encapsulating resin, heated to, for example, 130 to 170°C, is supplied onto the adhesive layer while maintaining a high viscosity, covering the semiconductor chip, and is compression-molded to form a layer of the encapsulating resin on the adhesive layer (see, for example, encapsulating layer 5 in FIG. 1D ). The temperature conditions are, for example, 130 to 170°C. Furthermore, the pressure applied to the semiconductor chip is, for example, 50 to 500 N / cm. ２ is.

[0113] <Layer Structure of Laminate of First Embodiment A> An example of the structure of the laminate of First Embodiment A will be described below with reference to the drawings. FIG. 1D shows a schematic cross-sectional view of an example of the laminate of First Embodiment A. The laminate of FIG. 1D has, in this order, a support substrate 1, a release agent layer 2, an adhesive layer 3, and an electronic device substrate 6. The electronic device substrate 6 has a plurality of semiconductor chips 4 on the adhesive layer 3 and a sealing layer 5 (a layer made of a sealing resin serving as a sealing material) disposed between the semiconductor chips 4. Although not shown, a substrate may be disposed on the surface of the sealing layer 5 opposite the adhesive layer 3 for the purpose of increasing the strength of the sealing layer, etc. The adhesive layer 3 is provided between the support substrate 1 and the release agent layer 2 and the electronic device substrate 6.

[0114] <Method for producing the laminate of the first embodiment A> A method for producing the laminate will be described below using the laminate shown in Fig. 1D as an example of the laminate of the first embodiment A. The laminate of the present invention can be produced, for example, by a method including the following steps 1A to 4A. First step A: a step of forming a release agent layer for light irradiation peeling on a light-transmitting support substrate, more specifically, a step of applying a release agent composition to a support substrate and heating the release agent coating layer to form a release agent layer. Second step A: a step of forming an adhesive layer on the release agent layer for light irradiation peeling, more specifically, a step of applying an adhesive composition to the release agent layer and heating the adhesive coating layer to form an adhesive layer. Third step A: a step of mounting a plurality of semiconductor chips on the adhesive layer, more specifically, a step of placing semiconductor chips on the adhesive layer and bonding the semiconductor chips onto the adhesive layer while performing at least one of a heat treatment and a pressure treatment (e.g., a heat treatment and a decompression treatment). Fourth step A: a step of forming an encapsulating layer on the adhesive layer to encapsulate the semiconductor chips, more specifically, a step of encapsulating the semiconductor chips fixed on the adhesive layer with an encapsulating resin to form an encapsulating layer.

[0115] The method for applying the adhesive composition is not particularly limited, but is typically spin coating. The heating temperature of the applied adhesive composition cannot be generally defined because it varies depending on the type and amount of adhesive components contained in the adhesive composition, the desired thickness of the adhesive layer, etc., but from the perspective of reproducibly achieving a suitable adhesive layer, it is 20°C or higher and 350°C or lower, and the heating time is typically determined appropriately within the range of 10 seconds to 60 minutes depending on the heating temperature. The heating temperature is preferably 50°C or higher and 320°C or lower, more preferably 60°C or higher and 300°C or lower. The heating time is preferably 30 seconds to 30 minutes or lower, more preferably 60 seconds to 15 minutes or lower. Heating can be performed using a hot plate, oven, or the like. The thickness of the adhesive layer obtained by applying the adhesive composition and, if necessary, heating it is typically about 1 μm to 10 μm.

[0116] An example of a method for producing the laminate of FIG. 1D will be described below with reference to FIGS. 1A to 1D. FIGS. 1A to 1D are diagrams illustrating one embodiment of producing a laminate. As shown in FIG. 1A, a release agent coating layer made of a release agent composition is formed on a support substrate 1, and the release agent coating layer is heated to form a release agent layer 2. Next, as shown in FIG. 1B, an adhesive coating layer made of an adhesive composition is formed on the release agent layer 2, and the adhesive coating layer is heated to form an adhesive layer 3. Next, as shown in FIG. 1C, a semiconductor chip 4 is placed on the adhesive layer 3, and while performing at least one of a heat treatment and a pressure treatment (e.g., a heat treatment and a reduced pressure treatment), a load is applied in the thickness direction of the semiconductor chip 4 and the support substrate 1 to bring them into close contact, thereby bonding the semiconductor chip 4 to the adhesive layer 3. Next, as shown in FIG. 1D, the semiconductor chip 4 fixed on the adhesive layer 3 is encapsulated using an encapsulating resin. 1D , a plurality of semiconductor chips 4 temporarily bonded onto a support substrate 1 via an adhesive layer 3 are sealed with a sealing layer 5 (a layer made of a sealing resin serving as a sealing material) disposed between the semiconductor chips 4. The sealing layer 5 disposed between the semiconductor chips 4 is formed on the adhesive layer 3, and an electronic device substrate 6 serving as a sealing structure including the semiconductor chips 4 and the sealing layer 5 is formed. The electronic device substrate 6 serving as a sealing structure is an electronic component in which a plurality of semiconductor chips are embedded in a sealing resin.

[0117] (Laminate (Laminate of Second Embodiment B)) As described above, the second embodiment B of the laminate according to the present invention is a laminate comprising a light-transmitting support substrate, a release agent layer for peeling by light irradiation, an adhesive layer, and a semiconductor substrate or an electronic device substrate laminated in this order.

[0118] The support substrate is optically transparent. The release agent layer for light-based peeling is provided between the adhesive layer and the semiconductor substrate or electronic device substrate, and the support substrate. Second embodiment B of the laminate is used in peeling the semiconductor substrate or electronic device substrate from the support substrate after the release agent layer absorbs light irradiated from the support substrate side. The release agent layer for light-based peeling is a layer formed from a release agent composition for light-based peeling. The adhesive layer is a layer formed from the adhesive composition of the present invention described above.

[0119] The second embodiment B of the laminate of the present invention is used for temporary bonding to process a semiconductor substrate or an electronic device substrate, and is used to manufacture the processed semiconductor substrate or electronic device substrate by processing the semiconductor substrate or electronic device substrate, such as thinning. In the second embodiment B, the semiconductor substrate and the electronic device substrate are collectively referred to as "semiconductor substrate, etc." While the semiconductor substrate or electronic device substrate is being processed, such as thinning, the semiconductor substrate, etc. is supported by a support substrate. After processing the semiconductor substrate, etc., the release agent layer is irradiated with light, and then the support substrate and the semiconductor substrate, etc. are separated. Residues of the release agent layer or adhesive layer remaining on the semiconductor substrate or electronic device substrate after the semiconductor substrate, etc. and the support substrate are peeled off can be removed, for example, with a cleaning composition for cleaning semiconductor substrates, etc.

[0120] <Supporting Substrate> The supporting substrate is not particularly limited as long as it is a member that is optically transparent to the light irradiated onto the release agent layer and that can support the semiconductor substrate when the semiconductor substrate is processed, and examples thereof include those similar to those described in the <Supporting Substrate> section above in (Laminate (Laminate of First Embodiment A)).

[0121] <Release Agent Layer> The release agent layer is a layer formed from a release agent composition. The release agent layer is provided between the adhesive layer and the semiconductor substrate, etc., and the supporting substrate. The release agent layer is in contact with the supporting substrate.

[0122] The laminate of the second embodiment B is used in such a manner that the adhesive layer and the semiconductor substrate or the like are peeled off from the support substrate after the release agent layer absorbs light irradiated from the support substrate side.

[0123] The release agent layer is not particularly limited, and examples thereof include those similar to those described in the section <Release Agent Layer> above in (Laminate (Laminate of First Embodiment A)).

[0124] The thickness of the release agent layer is not particularly limited, but is usually 0.05 to 3 μm. From the viewpoint of maintaining film strength, the thickness is preferably 0.07 μm or more, more preferably 0.1 μm or more, and even more preferably 0.2 μm or more. From the viewpoint of avoiding non-uniformity due to a thick film, the thickness is preferably 2 μm or less, more preferably 1 μm or less, even more preferably 0.8 μm or less, and even more preferably 0.5 μm or less.

[0125] <Adhesive Layer> The adhesive layer is a layer formed from the adhesive composition of the present invention. The adhesive layer is provided between a support substrate and a semiconductor substrate or an electronic device substrate (such as a semiconductor substrate). The adhesive layer is in contact with, for example, the semiconductor substrate.

[0126] The thickness of the adhesive layer of the laminate of the present invention is not particularly limited as long as it is a thin film of 10 μm or less and may be appropriately selected depending on the purpose, but in one embodiment it can be, for example, 5 μm or less, and in another embodiment it can be, for example, 3 μm or less. In order to provide the function as an adhesive layer, the thickness is more preferably 0.1 μm or more, and even more preferably 1 μm or more.

[0127] The adhesive composition of the present invention can form an adhesive layer with reduced defects even when the adhesive layer is thin. Because a thin adhesive layer can be formed, residue of the adhesive layer remaining on the semiconductor substrate or electronic device substrate after the semiconductor substrate or the like is peeled from the support substrate can be quickly and cleanly removed.

[0128] <Semiconductor Substrate or Electronic Device Substrate> <<Semiconductor Substrate>> The main material constituting the entire semiconductor substrate is not particularly limited as long as it is suitable for this type of application, and examples thereof include silicon, silicon carbide, compound semiconductors, and glass substrates with organic resins. The shape of the semiconductor substrate is not particularly limited, and may be, for example, a disk. Note that the surface of a disk-shaped semiconductor substrate does not need to be perfectly circular; for example, the outer periphery of the semiconductor substrate may have a linear portion called an orientation flat or a notch. The thickness of the disk-shaped semiconductor substrate may be determined appropriately depending on the intended use of the semiconductor substrate, and is not particularly limited, and is, for example, 500 to 1,000 μm. The diameter of the disk-shaped semiconductor substrate may be determined appropriately depending on the intended use of the semiconductor substrate, and is not particularly limited, and is, for example, 100 to 1,000 mm.

[0129] The semiconductor substrate may have bumps. Bumps are protruding terminals. In a laminate, when the semiconductor substrate has bumps, the bumps are located on the support substrate side. In a semiconductor substrate, the bumps are typically formed on the surface on which the circuit is formed. The circuit may be single-layered or multi-layered. The shape of the circuit is not particularly limited. In a semiconductor substrate, the surface opposite to the surface having the bumps (the back surface) is the surface used for processing. The material, size, shape, structure, and density of the bumps on the semiconductor substrate are not particularly limited. Examples of bumps include ball bumps, printed bumps, stud bumps, and plated bumps. The height, radius, and pitch of the bumps are typically determined appropriately based on the following conditions: a bump height of approximately 1 to 200 μm, a bump radius of 1 to 200 μm, and a bump pitch of 1 to 500 μm. Examples of bump materials include low-melting-point solder, high-melting-point solder, tin, indium, gold, silver, and copper. The bump may be composed of only a single component or multiple components. More specifically, examples include alloy platings mainly containing Sn, such as SnAg bumps, SnBi bumps, Sn bumps, and AuSn bumps. The bump may also have a laminate structure including a metal layer composed of at least one of these components.

[0130] An example of a semiconductor substrate is a silicon wafer with a diameter of about 300 mm and a thickness of about 770 μm.

[0131] <<Electronic Device Substrate>> An electronic device substrate refers to a substrate having an electronic device. In the present invention, for example, it refers to a substrate consisting of a layer in which multiple semiconductor chips are embedded in a sealing resin, that is, a substrate consisting of multiple semiconductor chips and a sealing resin disposed between the semiconductor chips. Examples include those described in the section <Electronic Device Substrate> above (Laminate (Laminate of First Embodiment A)). An "electronic device" refers to a member that constitutes at least a part of an electronic component. For example, an electronic device can be a semiconductor substrate having various mechanical structures or circuits formed on the surface thereof. An electronic device is preferably a composite of a member made of a metal or semiconductor and a resin that seals or insulates the member. An electronic device may have a wiring layer (described later) and / or a semiconductor element or other element sealed or insulated with a sealing material or insulating material, and may have a single-layer or multi-layer structure.

[0132] <Layer Structure of the Laminate of Second Embodiment B> An example of the structure of the laminate of Second Embodiment B will be described below with reference to the drawings. Among the laminates of Second Embodiment B, a laminate having a semiconductor substrate and a laminate having an electronic device substrate will be described separately. A case in which a semiconductor substrate is used as the substrate will be described as Second Embodiment B-1 of Second Embodiment B, and a case in which an electronic device substrate is used as the substrate will be described as Second Embodiment B-2 of Second Embodiment B. FIG. 2C shows a schematic cross-sectional view of an example of a laminate of Second Embodiment B-1 using a semiconductor substrate as the substrate. The laminate of FIG. 2C has, in this order, a semiconductor substrate 14, an adhesive layer 13, a release agent layer 12, and a support substrate 11. The adhesive layer 13 and the release agent layer 12 are provided between the semiconductor substrate 14 and the support substrate 11. The adhesive layer 13 is in contact with the semiconductor substrate 14. The release agent layer 12 is in contact with the adhesive layer 13 and the support substrate 11.

[0133] 3D is a schematic cross-sectional view of an example of a laminate using an electronic device substrate as the substrate, which is a second embodiment B-2. The laminate of FIG. 3D includes, in this order, a support substrate 31, a release agent layer 32, an adhesive layer 33, and an electronic device substrate 37. The electronic device substrate 37 includes a plurality of semiconductor chips 35 and sealing layers 36 (layers made of sealing resin as a sealing material) disposed between the semiconductor chips 35. The release agent layer 32 is provided between the electronic device substrate 37 and the support substrate 31.

[0134] <Method for Producing the Laminate of Second Embodiment B> <<Method for Producing the Laminate of Second Embodiment B-1>> ​​Of the laminates in Second Embodiment B, the method for producing the laminate will be described below using the laminate of Second Embodiment B-1 shown in FIG. 2 as an example. One example of the laminate of the present invention can be produced, for example, by a method including the following first step B-1 to third step B-1. First step B-1: A step of applying an adhesive composition to a semiconductor substrate to form an adhesive coating layer (and, if necessary, heating to form an adhesive layer). Second step B-2: A step of applying a release agent composition to a support substrate to form a release agent coating layer (and, if necessary, heating to form a release agent layer). Third step B-3: A step of performing a heat treatment or a pressure treatment (for example, a heat treatment or a reduced pressure treatment) while the adhesive coating layer or adhesive layer and the release agent coating layer or release agent layer are in contact with each other to form a laminate in which the adhesive layer and the release agent layer are bonded together.

[0135] The method for applying the adhesive composition is not particularly limited, but is typically spin coating. Alternatively, a method can be used in which a coating film is formed separately by spin coating or the like, a sheet-like coating film is formed, and the sheet-like coating film is then applied as an adhesive coating layer. The heating temperature of the applied adhesive composition cannot be generally specified because it varies depending on the type and amount of adhesive components contained in the adhesive composition, whether or not a solvent is contained, the boiling point of the solvent used, the desired thickness of the adhesive layer, etc., but is typically 80 to 150°C, and the heating time is typically 30 seconds to 5 minutes. The adhesive composition is applied, and if necessary, heated, and the film thickness of the resulting adhesive coating layer can be adjusted to an adhesive layer thickness of approximately 0.1 μm to 10 μm, as described above.

[0136] The method for applying the release agent composition is not particularly limited, but is typically spin coating. The heating temperature of the applied release agent composition cannot be generally defined because it varies depending on the type and amount of release agent components contained in the release agent composition, the desired thickness of the release agent layer, etc., but from the perspective of reproducibly achieving a suitable release agent layer, it is 80°C or higher and 300°C or lower, and the heating time is typically determined appropriately within the range of 10 seconds to 10 minutes depending on the heating temperature. The heating temperature is preferably 100°C or higher and 280°C or lower, more preferably 150°C or higher and 250°C or lower. The heating time is preferably 30 seconds to 8 minutes, more preferably 1 minute to 5 minutes. Heating can be performed using a hot plate, oven, or the like. The release agent composition is applied and, if necessary, heated to adjust the film thickness of the resulting release agent to typically about 5 nm to 100 μm.

[0137] In the present invention, the laminate of the present invention can be obtained by placing such coating layers in contact with each other, applying a load in the thickness direction of the semiconductor substrate and the support substrate while performing heat treatment or decompression treatment, or both, to adhere the two layers, and then performing post-heat treatment. Note that the treatment conditions to be adopted, whether heat treatment, decompression treatment, or a combination of both, are appropriately determined taking into consideration various factors such as the type of adhesive composition, the specific composition of the release agent composition, the compatibility of the films obtained from the two compositions, the film thickness, and the desired adhesive strength.

[0138] The heat treatment temperature is generally determined appropriately from the range of 20 to 150° C. from the viewpoints of removing the solvent from the composition, softening the adhesive coating layer to realize suitable bonding with the release agent layer, etc. In particular, from the viewpoints of suppressing or avoiding excessive curing or unnecessary deterioration of the adhesive component (A), the heat treatment temperature is preferably 130° C. or lower, more preferably 90° C. or lower, and the heating time is determined appropriately depending on the heating temperature and the type of adhesive, but is generally 30 seconds or longer, preferably 1 minute or longer, from the viewpoint of reliably achieving suitable adhesion, and is generally 10 minutes or shorter, preferably 5 minutes or shorter, from the viewpoint of suppressing deterioration of the adhesive layer and other members.

[0139] The reduced pressure treatment can be carried out by exposing the adhesive coating layer and the release agent layer, which are in contact with each other, to an atmospheric pressure of 10 to 10,000 Pa. The reduced pressure treatment time is usually 1 to 30 minutes.

[0140] From the viewpoint of reproducibly obtaining a laminate from which the substrates can be easily separated, the two layers that contact each other are preferably bonded together by a reduced pressure treatment, more preferably by a combination of a heat treatment and a reduced pressure treatment.

[0141] The load in the thickness direction of the semiconductor substrate and the support substrate is not particularly limited as long as it does not adversely affect the semiconductor substrate, the support substrate, and the two layers therebetween and can firmly adhere them to each other, but is usually within the range of 10 to 1000 N.

[0142] The post-heating temperature is preferably 120°C or higher from the viewpoint of achieving a sufficient curing rate, and preferably 260°C or lower from the viewpoint of preventing deterioration of the substrate and each layer. The post-heating time is usually 1 minute or longer, preferably 5 minutes or longer, from the viewpoint of achieving suitable bonding of the substrate and layers constituting the laminate, and usually 180 minutes or shorter, preferably 120 minutes or shorter, from the viewpoint of suppressing or avoiding adverse effects on each layer due to excessive heating. Heating can be performed using a hot plate, oven, or the like. When post-heating is performed using a hot plate, either the semiconductor substrate or the support substrate of the laminate may be heated facing down, but from the viewpoint of achieving suitable and reproducible peeling, post-heating with the semiconductor substrate facing down is preferred. Note that one purpose of the post-heating treatment is to achieve a more suitable self-standing adhesive layer and release agent layer, particularly to achieve suitable curing by a hydrosilylation reaction.

[0143] An example of a method for producing the laminate of FIG. 2C will be described below with reference to FIGS. 2A to 2C. FIGS. 2A to 2C are diagrams illustrating one embodiment of producing a laminate. First, a laminate is prepared in which an adhesive layer 13 is formed on a semiconductor substrate 14 ( FIG. 2A ). This laminate can be obtained, for example, by applying an adhesive composition to the semiconductor substrate 14. Later, the laminate may be formed as an adhesive coating layer or an adhesive layer after heating, whichever is more appropriate. Separately, a laminate is prepared in which a release agent layer 12 is formed on a support substrate 11 ( FIG. 2B ). This laminate can be obtained, for example, by applying a release agent composition to the support substrate 11. Later, the laminate may be formed as a release agent coating layer or a release agent layer after heating, whichever is more appropriate. Next, the laminate shown in FIG. 2A and the laminate shown in FIG. 2B are bonded together so that the adhesive layer 13 and the release agent layer 12 are in contact with each other. For example, after applying a load in the thickness direction of the semiconductor substrate 14 and the support substrate 11 under reduced pressure, a heating device (hot plate, not shown) is placed on the surface of the semiconductor substrate 14 opposite to the surface in contact with the adhesive layer 13, and the adhesive layer 13 is cured by heating to form a laminate in which the adhesive layer 13 and the release agent layer 12 are bonded together (FIG. 2C). The laminate is obtained by the steps shown in FIGS. 2A to 2C.

[0144] <<Method for Producing Laminate of Second Embodiment B-2>> A method for producing the laminate of the second embodiment B-2 shown in Fig. 3 will be described below as an example of the laminate of the second embodiment B. An example of the laminate of the present invention can be produced, for example, by a method including the following first step B-2 to fifth step B-2. First step B-2: A step of applying a release agent composition onto a support substrate to form a release agent coating layer (if necessary, heating to form a release agent layer). Second step B-2: A step of applying an adhesive composition to the surface of the release agent coating layer or release agent layer to form an adhesive coating layer (if necessary, further heating to form an adhesive layer). Third step B-2: A step of placing a semiconductor chip on the adhesive coating layer or adhesive layer and bonding the semiconductor chip to the adhesive coating layer or adhesive layer while performing at least one of a heat treatment and a pressure treatment (for example, a heat treatment and a decompression treatment). Fourth step B-2: A step of forming a hardened adhesive layer by post-heating the adhesive coating layer or adhesive layer. Fifth step B-2: A step of forming an encapsulating layer by encapsulating the semiconductor chip fixed on the adhesive layer using an encapsulating resin.

[0145] The fourth step B-2 may be performed after bonding the semiconductor chip to the adhesive coating layer in the third step B-2, or may be performed in conjunction with the third step B-2. For example, the semiconductor chip may be placed on the adhesive coating layer, and the adhesive coating layer may be heated and cured while applying a load in the thickness direction of the semiconductor chip and the support substrate, thereby simultaneously adhering the semiconductor chip to the adhesive coating layer and curing the adhesive coating layer to the adhesive layer, thereby bonding the adhesive layer to the semiconductor chip. The fourth step B-2 may also be performed before the third step B-2, and the semiconductor chip may be placed on the adhesive layer, and the adhesive layer may be bonded to the semiconductor chip while applying a load in the thickness direction of the semiconductor chip and the support substrate.

[0146] The application method, the heating temperature of the applied release agent composition or adhesive composition, the heating means, etc. are as described above in <<Method for producing laminate of second embodiment B-1>>. As described above, the film thickness of the adhesive layer is preferably in the range of about 0.1 μm to 10 μm.

[0147] An example of a method for producing the laminate of FIG. 3D will be described below with reference to FIGS. 3A to 3D. FIGS. 3A to 3D are diagrams illustrating one embodiment of producing a laminate. First, a laminate comprising a release-agent-coated layer 32 is prepared on a support substrate 31 ( FIG. 3A ). This laminate can be obtained, for example, by applying a release agent composition to the support substrate 31. Later, by main heating, either a release-agent-coated layer or a release agent layer can be formed. Next, a laminate comprising an adhesive layer 33 is prepared on the release-agent-coated layer or release agent layer 32 ( FIG. 3B ). This laminate can be obtained, for example, by applying an adhesive composition to the release-agent-coated layer or release agent layer 32. Later, by main heating, either a release-agent-coated layer or an adhesive layer can be formed. Next, as shown in FIG. 3C , a semiconductor chip 35 is placed on the adhesive coating layer or adhesive layer 33, and while performing at least one of heat treatment and pressure treatment (e.g., heat treatment and decompression treatment), a load is applied in the thickness direction of the semiconductor chip 35 and the support substrate 31 to bring them into close contact, thereby bonding the semiconductor chip 35 to the adhesive coating layer or adhesive layer 33. When the semiconductor chip 35 is bonded to the adhesive coating layer, the adhesive coating layer is post-heat treated to harden it into the adhesive layer 33, and the semiconductor chip 35 is fixed to the adhesive layer 33. Note that when the adhesive coating layer is post-heat treated, the release agent coating layer may also be post-heat treated to form the release agent layer 32. Next, as shown in FIG. 3D , the semiconductor chip 35 fixed on the adhesive layer 33 is encapsulated using an encapsulating resin. In FIG. 3D , multiple semiconductor chips 35 temporarily attached to the support substrate 31 via the adhesive layer 33 are encapsulated by an encapsulating layer 36 (a layer made of an encapsulating resin as an encapsulant) arranged between the semiconductor chips 35. An electronic device substrate 37 having semiconductor chips 35 and a sealing layer 36 arranged between the semiconductor chips 35 is formed on the adhesive layer 33. In this way, the electronic device substrate 37 is a base material layer in which multiple semiconductor chips are embedded in a sealing resin.

[0148] <<<Encapsulating Step>>> The semiconductor chip 35 is encapsulated using an encapsulant. The encapsulant used for encapsulating the semiconductor chip 35 is a material capable of insulating or encapsulating components made of metal or semiconductor. In the present invention, for example, a resin composition (encapsulating resin) is used as the encapsulant. The type of encapsulating resin is not particularly limited as long as it is capable of encapsulating and / or insulating metal or semiconductor, but it is preferable to use, for example, an epoxy-based resin or a silicone-based resin. The encapsulating material may contain other components such as a filler in addition to the resin component. Examples of fillers include spherical silica particles. In the encapsulating step, the encapsulating resin, heated to, for example, 130 to 170°C, is supplied onto the adhesive layer 33 while maintaining a high viscosity, so as to cover the semiconductor chip 35, and is compression-molded to form a layer of the encapsulating resin 36 on the adhesive layer 33. The temperature conditions during this process are, for example, 130 to 170°C. The pressure applied to the semiconductor chip 35 is, for example, 50 to 500 N / cm. ２ is.

[0149] (Method for Manufacturing Fan-Out Type Semiconductor Package (Third Embodiment C)) By using the stack of the first embodiment A according to the present invention, it is possible to provide a method for manufacturing a fan-out type semiconductor package.

[0150] The method for manufacturing a fan-out type semiconductor package of the present invention is characterized by comprising the steps of: separating an electronic device substrate from the support substrate by irradiating light from the support substrate side of a laminate of the first embodiment A of the present invention, in which a plurality of semiconductor chips are mounted on the adhesive layer and an encapsulating layer for encapsulating the semiconductor chips is formed on the adhesive layer; removing the adhesive layer on the electronic device substrate; forming a wiring layer (also referred to as a redistribution layer (RDL)) on the surface of the electronic device substrate from the side where the adhesive layer has been removed; and dividing the electronic device substrate into individual semiconductor chips to obtain individual semiconductor packages. Thus, the method for manufacturing a fan-out type semiconductor package of the present invention comprises, for example, the following steps C6 to C10. Sixth step C: A step of preparing a laminate according to the first embodiment A of the present invention, in which a plurality of semiconductor chips are mounted on the adhesive layer and a sealing layer for sealing the semiconductor chips is formed on the adhesive layer (this laminate can be obtained by the manufacturing method described above). Seventh step C: A step of separating the electronic device substrate from the support substrate by irradiating the laminate obtained in the sixth step C with light from the support substrate side. Eighth step C: A step of removing (cleaning) the adhesive layer on the electronic device substrate. Ninth step C: A step of forming a wiring layer (rewiring layer) on the surface of the electronic device substrate from which the adhesive layer has been removed. Tenth step C: A step of obtaining individual semiconductor packages by dividing the electronic device substrate into individual semiconductor chips.

[0151] In the seventh step C, the method for separating (peeling) the electronic device substrate and the support substrate includes, but is not limited to, mechanical peeling using a tool with a sharp part after irradiating the release agent layer with light, peeling between the adhesive layer and the support substrate, etc. By irradiating the release agent layer with light from the support substrate side, the release agent layer is altered (e.g., separated or decomposed) as described above, and then the electronic device substrate and the support substrate can be easily separated, for example, by lifting up one of the substrates.

[0152] The light irradiation of the release agent layer does not necessarily have to be performed on the entire area of ​​the release agent layer. Even if there are areas irradiated with light and areas not irradiated with light, as long as the release ability of the release agent layer as a whole is sufficiently improved, the electronic device substrate and the support substrate can be separated by a slight external force, such as by lifting up the support substrate. The ratio and positional relationship between the areas irradiated with light and the areas not irradiated with light vary depending on the thickness of the release agent layer, the intensity of the irradiated light, etc., but the conditions may be set appropriately. Typically, the light irradiation dose for peeling is 50 to 3,000 mJ / cm. ２ The irradiation time is appropriately determined depending on the wavelength and the irradiation amount.

[0153] The wavelength of the light used for peeling is, for example, preferably 250 to 600 nm, and more preferably 250 to 370 nm. More preferred wavelengths are 308 nm, 343 nm, 355 nm, 365 nm, or 532 nm. The amount of light required for peeling is an amount that can cause suitable alteration, such as decomposition, of resin X (more specifically, for example, novolac resin). The light used for peeling may be laser light or non-laser light emitted from a light source such as an ultraviolet lamp.

[0154] The adhesive layer side of the electronic device substrate can be cleaned (removed from the adhesive layer residue on the electronic device substrate) by spraying the cleaning composition onto the surface of the adhesive layer side of the separated electronic device substrate or by immersing the separated electronic device substrate in the cleaning composition. Examples of cleaning compositions used for cleaning include the following.

[0155] Detergent compositions usually contain a solvent. Examples of solvents include lactones, ketones, polyhydric alcohols, compounds having an ester bond, derivatives of polyhydric alcohols, cyclic ethers, esters, and aromatic organic solvents. Examples of lactones include γ-butyrolactone. Examples of ketones include acetone, methyl ethyl ketone, cyclohexanone, methyl-n-pentyl ketone, methyl isopentyl ketone, and 2-heptanone. Examples of polyhydric alcohols include ethylene glycol, diethylene glycol, propylene glycol, and dipropylene glycol. Examples of compounds having an ester bond include ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, and dipropylene glycol monoacetate. Examples of derivatives of polyhydric alcohols include compounds having an ether bond, such as monoalkyl ethers (e.g., monomethyl ether, monoethyl ether, monopropyl ether, and monobutyl ether) or monophenyl ethers of the above polyhydric alcohols or compounds having an ester bond. Among these, propylene glycol monomethyl ether acetate (PGMEA) and propylene glycol monomethyl ether (PGME) are preferred. Examples of cyclic ethers include dioxane. Examples of esters include methyl lactate, ethyl lactate (EL), methyl acetate, ethyl acetate, butyl acetate, methyl pyruvate, ethyl pyruvate, methyl methoxypropionate, and ethyl ethoxypropionate. Examples of aromatic organic solvents include anisole, ethyl benzyl ether, cresyl methyl ether, diphenyl ether, dibenzyl ether, phenetole, butyl phenyl ether, ethylbenzene, diethylbenzene, pentylbenzene, isopropylbenzene, toluene, xylene, cymene, and mesitylene. These may be used alone or in combination of two or more.Among these, propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME), cyclohexanone, and ethyl lactate (EL) are preferred.

[0156] Also preferred are mixed solvents containing PGMEA and a polar solvent. The blending ratio (mass ratio) can be determined appropriately taking into account the compatibility of the PGMEA and the polar solvent, but is preferably within the range of 1:9 to 9:1, and more preferably 2:8 to 8:2. For example, when EL is blended as the polar solvent, the mass ratio of PGMEA:EL is preferably 1:9 to 9:1, and more preferably 2:8 to 8:2. When PGME is blended as the polar solvent, the mass ratio of PGMEA:PGME is preferably 1:9 to 9:1, more preferably 2:8 to 8:2, and even more preferably 3:7 to 7:3. When PGME and cyclohexanone are blended as the polar solvents, the mass ratio of PGMEA:(PGME + cyclohexanone) is preferably 1:9 to 9:1, more preferably 2:8 to 8:2, and even more preferably 3:7 to 7:3.

[0157] The cleaning composition may or may not contain a salt; however, the absence of a salt is preferred in terms of increasing versatility in processing a substrate on the wiring layer side using the laminate and reducing costs.

[0158] An example of a detergent composition containing a salt is a detergent composition containing a quaternary ammonium salt and a solvent. The quaternary ammonium salt is composed of a quaternary ammonium cation and an anion, and is not particularly limited as long as it is used for this type of application. A typical example of such a quaternary ammonium cation is a tetra(hydrocarbon)ammonium cation. On the other hand, the anion paired with the quaternary ammonium cation is a hydroxide ion (OH － ) ; fluorine ion (F － ), chloride ions (Cl － ), bromine ion (Br － ), iodine ion (I － ) and other halogen ions; tetrafluoroborate ion (BF４ － ) ; hexafluorophosphate ion (PF ６ － ) and the like, but are not limited to these.

[0159] The quaternary ammonium salt is preferably a halogen-containing quaternary ammonium salt, more preferably a fluorine-containing quaternary ammonium salt. In the quaternary ammonium salt, the halogen atom may be contained in either the cation or the anion, but is preferably contained in the anion.

[0160] In a preferred embodiment, the fluorine-containing quaternary ammonium salt is tetra(hydrocarbon)ammonium fluoride. Specific examples of the hydrocarbon group in tetra(hydrocarbon)ammonium fluoride include alkyl groups having 1 to 20 carbon atoms, alkenyl groups having 2 to 20 carbon atoms, alkynyl groups having 2 to 20 carbon atoms, and aryl groups having 6 to 20 carbon atoms. In a more preferred embodiment, the tetra(hydrocarbon)ammonium fluoride includes tetraalkylammonium fluoride. Specific examples of tetraalkylammonium fluorides include, but are not limited to, tetramethylammonium fluoride, tetraethylammonium fluoride, tetrapropylammonium fluoride, and tetrabutylammonium fluoride (also known as tetrabutylammonium fluoride). Of these, tetrabutylammonium fluoride is preferred.

[0161] The quaternary ammonium salts such as tetra(hydrocarbon)ammonium fluoride may be used in the form of a hydrate. The quaternary ammonium salts such as tetra(hydrocarbon)ammonium fluoride may be used singly or in combination of two or more. The amount of the quaternary ammonium salt is not particularly limited as long as it dissolves in the solvent contained in the cleaning composition, but is usually 0.1 to 30 mass% based on the cleaning composition.

[0162] When the cleaning composition contains a salt, the solvent to be used in combination with the salt is not particularly limited as long as it is used for this type of application and dissolves the salt such as a quaternary ammonium salt. However, from the viewpoint of reproducibly obtaining a cleaning composition having excellent cleaning properties and from the viewpoint of satisfactorily dissolving the salt such as a quaternary ammonium salt to obtain a cleaning composition having excellent uniformity, the cleaning composition preferably contains one or two or more amide solvents.

[0163] In a method for manufacturing a fan-out type semiconductor package, particularly when manufacturing a semiconductor package by the mold first method, a wiring layer (rewiring layer) is formed on the surface of the electronic device substrate from which the adhesive layer has been removed.

[0164] <Wiring Layer> The wiring layer, also called RDL (Redistribution Layer), is a thin-film wiring body that forms wiring connected to a substrate, and can have a single-layer or multi-layer structure. The wiring layer is made of a dielectric material (silicon oxide (SiO ｘ The wiring layer may be formed by forming wiring between a conductive material (for example, a metal such as aluminum, copper, titanium, nickel, gold, or silver, or an alloy such as a silver-tin alloy) and a metal layer (for example, a photosensitive resin such as a photosensitive epoxy, photosensitive resin, etc.), but is not limited to this. Examples of methods for forming the wiring layer include the following methods. First, silicon oxide (SiO ｘ ), a dielectric layer of a photosensitive resin or the like is formed. A dielectric layer made of silicon oxide can be formed by, for example, sputtering, vacuum deposition, or the like. A dielectric layer made of a photosensitive resin can be formed by applying the photosensitive resin to a metal layer by, for example, spin coating, dipping, roller blade, spray coating, slit coating, or the like. Subsequently, wiring is formed on the dielectric layer using a conductor such as a metal. Methods for forming wiring include, for example, known semiconductor process techniques such as lithography processes such as photolithography (resist lithography), and etching processes. Examples of such lithography processes include lithography processes using a positive resist material and lithography processes using a negative resist material.

[0165] The components and methodological elements of the above-described steps of the method for manufacturing a fan-out type semiconductor package of the present invention may be modified in various ways without departing from the spirit of the present invention. The method for manufacturing a fan-out type semiconductor package of the present invention may include steps other than the steps described above.

[0166] An example of a method for manufacturing a fan-out type semiconductor package according to the third embodiment C will be described with reference to the drawings.

[0167] An example of the third embodiment C will be described using Figures 1E to 1H. First, a laminate is prepared (Figure 1D). The method for producing this laminate is as described above. Next, the release agent layer 2 is irradiated with light from the support substrate 1 side (Figure E), and then a peeling device (not shown) is used to separate the electronic device substrate 6 and adhesive layer 3 from the support substrate 1 (Figure 1F). Residues of the adhesive layer 3 and release agent layer 2 may remain on the surface of the electronic device substrate 6 having the semiconductor chip 4 and encapsulation layer 5. Therefore, the electronic device substrate 6 can be cleaned using a detergent composition to remove the adhesive layer 3 and release agent layer 2 from the surface of the electronic device substrate 6. By removing the release agent layer and adhesive layer, an electronic device substrate 6 having a semiconductor chip 4 and encapsulation layer 5 as shown in Figure 1G can be obtained. Next, a wiring layer (rewiring layer) 7 is formed on the surface of the electronic device substrate from which the adhesive layer was removed. The electronic device substrate 6 is then divided to suitably obtain individual fan-out semiconductor packages (electronic components having semiconductor chips and wiring layers).

[0168] (Method for manufacturing a processed semiconductor substrate or electronic device substrate (Fourth embodiment D)) By using the laminate of the second embodiment B according to the present invention, it is possible to provide a method for manufacturing a processed semiconductor substrate or a method for manufacturing a processed electronic device substrate.

[0169] The method for producing a processed semiconductor substrate or electronic device substrate of the present invention is characterized by comprising: a processing step in which a semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) in the laminate of the second embodiment B of the present invention is processed; and a separation step in which the semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) processed in the processing step is separated from a support substrate. Thus, the method for producing a processed semiconductor substrate or electronic device substrate of the present invention comprises the following sixth step D and seventh step D. The method for producing a processed semiconductor substrate or electronic device substrate may further comprise the following eighth step D. Sixth step D: a step of processing a semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) in the laminate of the present invention; Seventh step D: a step of separating the semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) processed in the sixth step D from the support substrate; and Eighth step D: a step of cleaning the processed semiconductor substrate or electronic device substrate after the seventh step D.

[0170] The processing performed on the semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) in the sixth step D is, for example, processing of the side opposite the circuit surface of the wafer, such as thinning the wafer by polishing the back surface of the wafer. Thereafter, for example, through-silicon vias (TSVs) are formed, and then the thinned wafer is peeled off from the support substrate to form a wafer stack, which is then three-dimensionally mounted. Also, for example, before or after this, formation of wafer backside electrodes, etc. is also performed. During the wafer thinning and TSV process, a heat load of approximately 250 to 350°C is applied while the wafer is adhered to the support substrate. The laminate of the present invention, including the adhesive layer, typically has heat resistance to this load. Note that the processing is not limited to the above-described processing, and also includes, for example, the implementation of a semiconductor component mounting process when the wafer is temporarily adhered to a support substrate to support the substrate for mounting the semiconductor component.

[0171] In particular, when the laminate has an electronic device substrate, examples of the processing performed on the electronic device substrate in the sixth step D include the grinding step and the wiring layer forming step described below.

[0172] <Grinding Step> The grinding step is a step of grinding the resin portion of the sealing layer 36 on the electronic device substrate 37 so as to expose a part of the semiconductor chip 35 (see FIG. 3E).

[0173] <Wiring Layer Forming Process> The wiring layer forming process is a process of forming a wiring layer on the exposed semiconductor chip 35 after the grinding process (see FIG. 3F). The wiring layer is also called an RDL (Redistribution Layer), and is a thin-film wiring body that constitutes wiring connected to the substrate, and can have a single-layer or multi-layer structure. The wiring layer is made of a dielectric (silicon oxide (SiO ｘ The wiring layer may be formed by a conductor (for example, a metal such as aluminum, copper, titanium, nickel, gold, or silver, or an alloy such as a silver-tin alloy) between a metal layer (such as a photosensitive resin such as a photosensitive epoxy, photosensitive resin, or the like), but is not limited to this. For example, the wiring layer may be formed by the following method. First, silicon oxide (SiO ｘ ), a dielectric layer made of a photosensitive resin or the like is formed. The dielectric layer made of silicon oxide can be formed by, for example, sputtering, vacuum deposition, or the like. The dielectric layer made of a photosensitive resin can be formed by applying the photosensitive resin to the sealing layer 36 by, for example, spin coating, dipping, roller blade, spray coating, slit coating, or the like. Next, wiring is formed on the dielectric layer using a conductor such as metal. Methods for forming the wiring include, for example, known semiconductor process techniques such as lithography processes such as photolithography (resist lithography), etching, and the like. Examples of such lithography processes include lithography processes using a positive resist material and lithography processes using a negative resist material.

[0174] In the seventh step D, methods for separating (peeling) the semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) from the support substrate include, but are not limited to, mechanical peeling using a tool with a sharp part after irradiating the release agent layer with light, peeling between the support substrate and the semiconductor substrate, etc. By irradiating the release agent layer with light from the support substrate side, the release agent layer is altered (for example, separated or decomposed) as described above, and then the semiconductor substrate, etc. and the support substrate can be easily separated, for example, by lifting up one of the substrates.

[0175] The light irradiation of the release agent layer does not necessarily have to be performed on the entire area of ​​the release agent layer. Even if there are areas irradiated with light and areas not irradiated with light, as long as the release ability of the release agent layer as a whole is sufficiently improved, the semiconductor substrate or the like can be separated from the support substrate by a slight external force, such as by pulling up the support substrate. The ratio and positional relationship of the areas irradiated with light and the areas not irradiated with light will vary depending on the type and specific composition of the adhesive used, the thickness of the adhesive layer, the thickness of the adhesive layer, the thickness of the release agent layer, the intensity of the light irradiated, etc., but the conditions may be set appropriately. Typically, the light irradiation dose for peeling is 50 to 3,000 mJ / cm ２ The irradiation time is appropriately determined depending on the wavelength and the irradiation amount.

[0176] As described above, the wavelength of the light used for peeling is preferably, for example, 250 to 600 nm, and more preferably 250 to 370 nm. More preferred wavelengths are 308 nm, 343 nm, 355 nm, 365 nm, or 532 nm. The amount of light required for peeling is an amount that can cause suitable alteration, such as decomposition, of resin X (more specifically, for example, novolac resin). The light used for peeling may be laser light or non-laser light emitted from a light source such as an ultraviolet lamp.

[0177] The substrate can be cleaned by spraying the cleaning composition onto the surface of a separated semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) or by immersing the separated semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) in the cleaning composition. The surface of a processed semiconductor substrate, etc. may also be cleaned using a removal tape, etc. As an example of cleaning a substrate, an eighth step D of cleaning the processed semiconductor substrate, etc. may be performed after the seventh step D. The cleaning composition used for cleaning may be the same as that described above in the section (Method for producing a fan-out type semiconductor package (Third embodiment C)).

[0178] The constituent elements and methodological elements of the above-described steps of the method for manufacturing a processed semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) of the present invention may be modified in various ways without departing from the spirit of the present invention. The method for manufacturing a processed semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) of the present invention may include steps other than those described above.

[0179] An example of a method for manufacturing a processed semiconductor substrate or electronic device substrate according to the fourth embodiment D will be described with reference to the drawings. In the fourth embodiment D, of the laminates according to the second embodiment B, a laminate having a semiconductor substrate and a laminate having an electronic device substrate will be described separately. The case where a semiconductor substrate is used as the substrate will be described as a fourth embodiment D-1 of the fourth embodiment D, and the case where an electronic device substrate is used as the substrate will be described as a fourth embodiment D-2 of the fourth embodiment D.

[0180] An example of the fourth embodiment D-1 will be described with reference to FIGS. 2C to 2G. This example is an example of manufacturing a thinned semiconductor substrate. First, a laminate is prepared ( FIG. 2C ). The method for manufacturing this laminate is as described above. Next, a polishing device (not shown) is used to polish the surface of the semiconductor substrate 14 opposite to the surface in contact with the adhesive layer 13, thereby thinning the semiconductor substrate 14 ( FIG. 2D ). The thinned semiconductor substrate 14 may also be subjected to the formation of a through electrode or the like. Next, the release agent layer 11 is irradiated with light from the support substrate 12 side, and then the thinned semiconductor substrate 14 and the support substrate 12 are separated using a peeling device (not shown). This results in a thinned semiconductor substrate 14 ( FIG. 2F ). Residues of the adhesive layer 13 and the release agent layer 12 may remain on the thinned semiconductor substrate 14. Therefore, the thinned semiconductor substrate 14 can be cleaned using a cleaning composition to remove the residues of the adhesive layer 13 and the release agent layer 12 from the semiconductor substrate 14 ( FIG. 2G ).

[0181] An example of the fourth embodiment D-2 will be described using FIGS. 3D to 3H. This example is an example of manufacturing a thinned electronic device substrate. First, a laminate is prepared ( FIG. 3D ). The method for manufacturing this laminate is as described above. Next, as shown in FIG. 3E , for example, the encapsulation layer 36 of the laminate shown in FIG. 3D is polished to a thickness approximately equal to that of the semiconductor chip 35. Next, a wiring layer 38 may be formed on an electronic device substrate 37 consisting of the semiconductor chip 35 and the encapsulation layer 36 (see FIG. 3F ). As shown in FIG. 3G , the release agent layer 32 is irradiated with light (arrow) through the support substrate 31 to alter the release agent layer 32, thereby separating the electronic device substrate 37 from the support substrate 31. For example, after the separation step by irradiation shown in FIG. 3G , the adhesive layer 33 and the release agent layer 32 remain attached to the electronic device substrate 37, but the adhesive layer 33 and the release agent layer 32 can be removed using a cleaning composition. By removing the release agent layer and adhesive layer, a processed electronic device layer (electronic device substrate or electronic component having a wiring layer) as shown in FIG. 3H can be suitably obtained.

[0182] The present invention will be described in more detail below with reference to examples, but the present invention is not limited to the following examples. The apparatus used is as follows.

[0183] (1) Defect inspection device: Lasertec Corporation, wafer defect inspection device, TROIS31-300 (2) LTJ coater: Lithotec Japan Co., Ltd., LTJ coater, LSC1200C

[0184] [1] Preparation of adhesive composition [Example 1-1] In a 200 mL stirring vessel for a stirrer, 35.0 g of MQ resin (manufactured by Wacker Chemie) containing polysiloxane and vinyl groups as the polyorganosiloxane, 15.7 g of vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chemie) having a viscosity of 200 mPa·s, 5.3 g of SiH group-containing linear polydimethylsiloxane (manufactured by Wacker Chemie) having a viscosity of 100 mPa·s as the polyorganosiloxane, and 1,1-diphenyl-1,2-propyn-1-ol were added. An adhesive composition was obtained by adding 0.14 g of 1-ethynylcyclohexanol (manufactured by Tokyo Chemical Industry Co., Ltd.) as a polymerization inhibitor, 0.29 g of platinum catalyst (manufactured by Wacker Chemical Co., Ltd.) as a platinum group metal catalyst, 2.3 g of vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chemical Co., Ltd.) having a viscosity of 1000 mPa s, and 49.0 g of p-menthane (manufactured by Tokyo Chemical Industry Co., Ltd.) and 16.3 g of isononane (manufactured by KH Neochem Co., Ltd.) as solvents and stirring. The proportion of components other than the solvent (non-volatile content) in the resulting adhesive components was 47.0 mass%.

[0185] [Example 1-2] A 200 mL stirring vessel dedicated to the stirrer was charged with 35.0 g of MQ resin (manufactured by Wacker Chemie) containing polysiloxane and vinyl groups as the polyorganosiloxane, 15.7 g of vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chemie) having a viscosity of 200 mPa·s, 5.3 g of SiH group-containing linear polydimethylsiloxane (manufactured by Wacker Chemie) having a viscosity of 100 mPa·s as the polyorganosiloxane, and 1,1-diphenyl-1,2-propyn-1-ol. An adhesive composition was obtained by adding 0.14 g of 1-ethynylcyclohexanol (manufactured by Tokyo Chemical Industry Co., Ltd.) as a polymerization inhibitor, 0.29 g of platinum catalyst (manufactured by Wacker Chemical Co., Ltd.) as a platinum group metal catalyst, 2.3 g of vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chemical Co., Ltd.) having a viscosity of 1000 mPa s, and 32.7 g of p-menthane (manufactured by Tokyo Chemical Industry Co., Ltd.) and 32.7 g of isononane (manufactured by KH Neochem Co., Ltd.) as solvents and stirring. The proportion of components other than the solvent (non-volatile content) in the resulting adhesive components was 47.0 mass%.

[0186] [Example 1-3] A 200 mL stirring vessel dedicated to the stirrer was charged with 35.0 g of MQ resin (manufactured by Wacker Chemie) containing polysiloxane and vinyl groups as the polyorganosiloxane, 15.7 g of vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chemie) having a viscosity of 200 mPa·s, 5.3 g of SiH group-containing linear polydimethylsiloxane (manufactured by Wacker Chemie) having a viscosity of 100 mPa·s as the polyorganosiloxane, and 1,1-diphenyl-1,2-propyn-1-ol. An adhesive composition was obtained by adding 0.14 g of 1-ethynylcyclohexanol (manufactured by Tokyo Chemical Industry Co., Ltd.) as a polymerization inhibitor, 0.29 g of platinum catalyst (manufactured by Wacker Chemical Co., Ltd.) as a platinum group metal catalyst, 2.3 g of vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chemical Co., Ltd.) having a viscosity of 1000 mPa s, and 16.3 g of p-menthane (manufactured by Tokyo Chemical Industry Co., Ltd.) and 49.0 g of isononane (manufactured by KH Neochem Co., Ltd.) as solvents and stirring. The proportion of components other than the solvent (non-volatile content) in the resulting adhesive components was 47.0 mass%.

[0187] [Example 1-4] A 200 mL stirring vessel for the stirrer was charged with 35.0 g of MQ resin (manufactured by Wacker Chemie) containing polysiloxane and vinyl groups as the polyorganosiloxane, 15.7 g of vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chemie) having a viscosity of 200 mPa·s, 5.3 g of SiH group-containing linear polydimethylsiloxane (manufactured by Wacker Chemie) having a viscosity of 100 mPa·s as the polyorganosiloxane, and 1,1-diphenyl-1,2-propyne-1-ol. An adhesive composition was obtained by adding 0.14 g of cyclohexyl alcohol (manufactured by Tokyo Chemical Industry Co., Ltd.) as a polymerization inhibitor, 0.29 g of 1-ethynylcyclohexanol (manufactured by Wacker Chemical Co., Ltd.) as a polymerization inhibitor, 0.29 g of platinum catalyst (manufactured by Wacker Chemical Co., Ltd.) as a platinum group metal catalyst, 2.3 g of vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chemical Co., Ltd.) having a viscosity of 1000 mPa s, and 6.5 g of p-menthane (manufactured by Tokyo Chemical Industry Co., Ltd.) and 58.8 g of isononane (manufactured by KH Neochem Co., Ltd.) as solvents, and stirring. The proportion of components other than the solvent (non-volatile content) in the resulting adhesive components was 47.0 mass%.

[0188] [Example 1-5] In a 200 mL stirring vessel for the stirrer, 85.0 g of MQ resin (manufactured by Wacker Chemie) containing polysiloxane and vinyl groups as polyorganosiloxane, 38.2 g of vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chemie) having a viscosity of 200 mPa s, 12.9 g of SiH group-containing linear polydimethylsiloxane (manufactured by Wacker Chemie) having a viscosity of 100 mPa s as polyorganosiloxane, and 1,1-diphenyl-1,2-propyn-1-ol (manufactured by Tokyo Chemical Industry Co., Ltd.) were added. 0.35 g of 1-ethynylcyclohexanol (manufactured by Wacker Chemical Co.) as a polymerization inhibitor, 0.70 g of platinum catalyst (manufactured by Wacker Chemical Co.) as a platinum group metal catalyst, 5.7 g of vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chemical Co.) having a viscosity of 1000 mPa s, and 165.0 g of p-menthane (manufactured by Tokyo Chemical Industry Co.) and 41.3 g of propylene glycol monomethyl ether acetate (manufactured by Tokyo Chemical Industry Co.) as solvents were added and stirred to obtain an adhesive composition. The proportion of components other than the solvent (non-volatile content) in the obtained adhesive components was 46.0 mass%.

[0189] [Example 1-6] A 200 mL stirring vessel for the stirrer was charged with 85.0 g of MQ resin (manufactured by Wacker Chemie) containing polysiloxane and vinyl groups as the polyorganosiloxane, 38.2 g of vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chemie) having a viscosity of 200 mPa·s, 12.9 g of SiH group-containing linear polydimethylsiloxane (manufactured by Wacker Chemie) having a viscosity of 100 mPa·s as the polyorganosiloxane, 1,1-diphenyl-1,2-propyn-1-ol (manufactured by Tokyo Chemical Industry Co., Ltd.), and 1,1-diphenyl-1,2-propyn-1-ol (manufactured by Tokyo Chemical Industry Co., Ltd.). ) as a polymerization inhibitor, 0.70 g of 1-ethynylcyclohexanol (manufactured by Wacker Chemical Co.) as a polymerization inhibitor, 0.70 g of platinum catalyst (manufactured by Wacker Chemical Co.) as a platinum group metal catalyst, 5.7 g of vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chemical Co.) having a viscosity of 1000 mPa s, and 82.5 g of p-menthane (manufactured by Tokyo Chemical Industry Co.) and 82.5 g of propylene glycol monomethyl ether acetate (manufactured by Tokyo Chemical Industry Co.) as solvents were added and stirred to obtain an adhesive composition. The proportion of components other than the solvent (non-volatile content) in the resulting adhesive components was 46.0 mass%.

[0190] [Example 1-7] In a 200 mL stirring vessel for the stirrer, 85.0 g of MQ resin (manufactured by Wacker Chemie) containing polysiloxane and vinyl groups as polyorganosiloxane, 38.2 g of vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chemie) having a viscosity of 200 mPa s, 12.9 g of SiH group-containing linear polydimethylsiloxane (manufactured by Wacker Chemie) having a viscosity of 100 mPa s as polyorganosiloxane, and 1,1-diphenyl-1,2-propyn-1-ol (manufactured by Tokyo Chemical Industry Co., Ltd.) were added. 0.35 g of 1-ethynylcyclohexanol (manufactured by Wacker Chemical Co.) as a polymerization inhibitor, 0.70 g of platinum catalyst (manufactured by Wacker Chemical Co.) as a platinum group metal catalyst, 5.7 g of vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chemical Co.) having a viscosity of 1000 mPa s, and 41.2 g of p-menthane (manufactured by Tokyo Chemical Industry Co.) and 123.7 g of propylene glycol monomethyl ether acetate (manufactured by Tokyo Chemical Industry Co.) as solvents were added and stirred to obtain an adhesive composition. The proportion of components other than the solvent (non-volatile content) in the obtained adhesive components was 46.0 mass%.

[0191] [Comparative Example 1-1] In a 200 mL stirring vessel for the stirrer, 35.0 g of MQ resin (manufactured by Wacker Chemie) containing polysiloxane and vinyl groups as polyorganosiloxane, 15.7 g of vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chemie) having a viscosity of 200 mPa·s, 5.3 g of SiH group-containing linear polydimethylsiloxane (manufactured by Wacker Chemie) having a viscosity of 100 mPa·s as polyorganosiloxane, 1,1-diphenyl-1,2 0.14 g of 1-propyn-1-ol (manufactured by Tokyo Chemical Industry Co., Ltd.), 0.29 g of 1-ethynylcyclohexanol (manufactured by Wacker Chemical Co., Ltd.) as a polymerization inhibitor, 0.29 g of platinum catalyst (manufactured by Wacker Chemical Co., Ltd.) as a platinum group metal catalyst, 2.3 g of vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chemical Co., Ltd.) having a viscosity of 1000 mPa s, and 32.7 g of p-menthane (manufactured by Tokyo Chemical Industry Co., Ltd.) as a solvent were added and stirred to obtain an adhesive composition. The proportion of components other than the solvent (non-volatile content) in the obtained adhesive components was 47.0 mass%.

[0192] [2] Production of coating film layer and confirmation of coatability [Example 2-1] Each of the adhesive compositions obtained in Example 1-1 was applied by spin coating using an LTJ coater to a 300 mm silicon wafer (thickness: 775 μm) as the device side wafer, and the adhesive composition was heated at 90°C for 1.5 minutes, 130°C for 5 minutes, and 200°C for 5 minutes to remove residual solvent on the wafer and form an adhesive coating layer or adhesive layer on the wafer. The film thickness of the adhesive coating layer or adhesive layer after heating was 3 μm.

[0193] The number of defects of 20 μm or more was confirmed for the obtained adhesive coating layer or adhesive layer using a defect inspection device. The coating performance of the layer was evaluated using the defect inspection device, with a defect count of 1,000 or less being considered good and a defect count of more than 1,000 being considered poor. The results are shown in Table 1 below.

[0194] [Example 2-2] to [Example 2-7] and [Comparative Example 2-1] Adhesive coating layers or adhesive layers were obtained in the same manner as in Example 2-1, except that the adhesive compositions obtained in Examples 1-2 to 1-7 and Comparative Example 1-1 were used instead of the adhesive composition obtained in Example 1-1. The number of defects was evaluated for each of the obtained adhesive coating layers or adhesive layers of Examples 2-2 to 2-7 and Comparative Example 2-1 in the same manner as in Example 2-1. The results are shown in Table 1.

[0195]

[0196] The adhesive coating layers or adhesive layers of Examples 2-1, 2-2, 2-3, 2-4, 2-5, 2-6, and 2-7 had good coating performance, whereas the adhesive coating layer or adhesive layer of Comparative Example 2-1, which did not contain a highly volatile solvent, had poor coating performance. Thus, it was confirmed that, with the adhesive composition of the present invention, by incorporating a highly volatile solvent such as isononane or propylene glycol monomethyl ether acetate, an adhesive coating layer or adhesive layer with good coating performance can be obtained even if the adhesive coating layer or adhesive layer is thin.

[0197] REFERENCE SIGNS LIST 1 Support substrate 2 Release agent layer 3 Adhesive layer 4 Semiconductor chip 5 Sealing layer 6 Electronic device substrate 7 Wiring layer 11 Support substrate 12 Release agent layer 13 Adhesive layer 14 Semiconductor substrate 31 Support substrate 32 Release agent layer 33 Adhesive layer 35 Semiconductor chip 36 Sealing layer 37 Electronic device substrate 38 Wiring layer

Claims

An adhesive composition for forming an adhesive layer used to temporarily bond a semiconductor substrate or an electronic device substrate to a support substrate, The adhesive composition has a solvent content excluding solids of 20% by mass or more, an adhesive composition, wherein the solvent (S) having a boiling point of 150°C or less accounts for 20 mass% or more of the solvent; 　 The adhesive composition according to claim 1 , wherein the solvent (S) accounts for 20% by mass or more and 95% by mass or less of the solvent.

2. The adhesive composition according to claim 1, wherein the solvent (S) is at least one selected from the group consisting of isononane, propylene glycol monomethyl ether acetate, butyl acetate, propylene glycol monomethyl ether, and octane. 　 The adhesive composition according to claim 1 , wherein the adhesive composition comprises a component (A) that cures by a hydrosilylation reaction. 　 The component (A) is A polyorganosiloxane (a1) having an alkenyl group having 2 to 40 carbon atoms bonded to a silicon atom; a polyorganosiloxane (a2) having Si—H groups; The adhesive composition of claim 4, wherein 　 a light-transmitting support substrate; a release agent layer for light irradiation peeling; an adhesive layer; A laminate in which a semiconductor substrate or an electronic device substrate is laminated in this order, the electronic device substrate has a semiconductor chip and a sealing layer that seals the semiconductor chip, A laminate, wherein the adhesive layer is an adhesive layer formed from the adhesive composition according to claim 1. 　 A method for manufacturing a fan-out type semiconductor package, comprising: The electronic device substrate in the laminate according to claim 6 includes a plurality of semiconductor chips and a sealing layer for sealing the semiconductor chips, a step of irradiating a laminate including the electronic device substrate with light from the support substrate side to separate the electronic device substrate from the support substrate; removing the adhesive layer on the electronic device substrate; forming a wiring layer on the surface of the electronic device substrate from which the adhesive layer has been removed; and a step of obtaining individual semiconductor packages by dividing the electronic device substrate into individual semiconductor chips.

8. The method for manufacturing a fan-out type semiconductor package according to claim 7, wherein the thickness of the adhesive layer in the laminate is 0.1 μm to 10 μm. 　 The laminate is A step of forming a release agent layer for light irradiation peeling on a light-transmitting support substrate; forming an adhesive layer on the release agent layer for light irradiation peeling; Mounting a plurality of semiconductor chips on the adhesive layer; and a step of forming a sealing layer on the adhesive layer to seal the semiconductor chip, the step of forming a sealing layer on the adhesive layer, the method for manufacturing a fan-out type semiconductor package according to claim 7 .

1. A method for manufacturing a processed semiconductor substrate or electronic device substrate, comprising: a processing step in which the semiconductor substrate or the electronic device substrate of the laminate according to claim 6 is processed; a step of separating the semiconductor substrate or the electronic device substrate processed in the processing step from the support substrate by irradiating light from the support substrate side; 1. A method for producing a processed semiconductor substrate or electronic device substrate, comprising: 　 The method for producing a processed semiconductor substrate or electronic device substrate according to claim 10, further comprising the step of removing an adhesive layer on the semiconductor substrate or electronic device substrate after separation. 　 The method for producing a processed semiconductor substrate or electronic device substrate according to claim 10, wherein the thickness of the adhesive layer in the laminate is 0.1 μm to 10 μm. 　 The laminate is A step of forming a release agent layer for light irradiation peeling on a light-transmitting support substrate; forming an adhesive layer on the release agent layer for light irradiation peeling; and forming a semiconductor substrate or an electronic device substrate on the adhesive layer.

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