Inspection probe head

Abstract

The purpose of the present invention is to provide an inspection probe for easily inspecting a semiconductor element in a non-contact manner. This inspection probe head is provided with a radiation antenna, and comprises: a power supply connector that is attached on the main surface side of a substrate, is connected to a power supply terminal of a semiconductor element, and is for supplying power to the semiconductor element; and a reception antenna that is attached on the main surface of the substrate, and that receives an electromagnetic wave signal radiated from the radiation antenna of the semiconductor element by having the power supply connector connected to the power supply terminal. In addition, the reception antenna is formed on the main surface of the substrate.

Description

Probe head for inspection

[0001] The present invention relates to an inspection connection device that receives electromagnetic wave signals emitted from semiconductor elements, and particularly relates to a method of inspecting electromagnetic wave signals in addition to the conventional inspection of semiconductor elements using electrical signals, and relates to the transmission and reception method of electromagnetic wave signals between semiconductor elements, between chiplets, and inside chiplets.

[0002] Recently, with the miniaturization and high-speed operation of electronic devices, the wiring pitch of semiconductor elements used therein has also been miniaturized, and clocks and other speeds have become faster.

[0003] In particular, in logic devices and the like, the process technology is approaching 2 nm (nanometers), but the pitch of a multi-pin probe card is 40 μm (micrometers), resulting in a large gap.

[0004] Furthermore, the clock speed of microprocessors has reached 28 GHz (gigahertz), but it has become difficult to evaluate semiconductor elements to be inspected using current testers as inspection devices and multi-pin probe cards.

[0005] Therefore, there are problems such as the inspection device for semiconductor elements becoming a bottleneck in the progress of semiconductor elements, the development cost of the inspection device increasing, and the time required for preparation for inspection being long.

[0006] Japanese Patent Application Laid-Open No. 2024-112630

[0007] In the above Patent Document 1, the probe includes a coil, but it is not for inspecting electromagnetic wave signals, and the inspection method is not described.

[0008] The present invention relates to an inspection connection device that receives electromagnetic wave signals emitted from semiconductor elements, and particularly relates to a method of inspecting electromagnetic wave signals in addition to the conventional inspection of semiconductor elements using electrical signals, and relates to the transmission and reception method of electromagnetic wave signals between semiconductor elements, between chiplets, and inside chiplets.

[0009] The inspection probe head according to the present invention is an inspection probe head equipped with a first radiating antenna, comprising: a substrate having a main surface; a power connector attached to the main surface side of the substrate and connected to the power terminal of the semiconductor element for supplying power to the semiconductor element; and a first receiving antenna attached to the main surface side of the substrate and connecting the power connector and the power terminal for receiving electromagnetic wave signals radiated from the first radiating antenna of the semiconductor element. Furthermore, the first receiving antenna is characterized in that it is formed on the main surface of the substrate.

[0010] The inspection probe head according to the present invention can effectively receive electromagnetic wave signals from semiconductor elements.

[0011] Furthermore, in the inspection probe head according to the present invention, the first receiving antenna may include a first loop antenna having a first radius and a second loop antenna having a second radius different from the first radius, wherein the second loop antenna is positioned inside the first loop antenna.

[0012] The inspection probe head according to the present invention can effectively receive electromagnetic wave signals of two different frequencies from semiconductor elements.

[0013] In the inspection probe head according to the present invention, the first receiving antenna may be characterized by including a first receiving antenna and a second receiving antenna positioned to the side of the first receiving antenna.

[0014] The inspection probe head according to the present invention can effectively receive electromagnetic wave signals of two different frequencies from semiconductor elements.

[0015] In the inspection probe head according to the present invention, the first receiving antenna may be characterized by having a first loop antenna and a second loop antenna laminated with an insulating layer in a direction intersecting the extending direction of the main surface.

[0016] The inspection probe head according to the present invention can enhance the reception of electromagnetic wave signals from semiconductor elements.

[0017] The inspection probe head according to the present invention is an inspection probe head equipped with a first radiating antenna, and includes a plurality of inspection units formed on a substrate having a main surface, capable of simultaneously measuring a plurality of semiconductor elements formed on a semiconductor wafer, wherein the inspection unit is equipped with a power connector attached to the main surface side of the substrate and connected to the power terminal of the semiconductor element for supplying power to the semiconductor element, and a receiving antenna attached to the main surface side of the substrate and connected to the power connector and the power terminal for receiving electromagnetic wave signals radiated from the radiating antenna of the semiconductor element.

[0018] The inspection probe head according to the present invention can simultaneously receive electromagnetic wave signals from multiple semiconductor elements.

[0019] The inspection probe head according to the present invention is an inspection probe head equipped with a radiating antenna and a receiving antenna, comprising a substrate having a main surface, a power connector attached to the main surface side of the substrate and connected to the power terminal of the semiconductor element for supplying power to the semiconductor element, and a probe receiving antenna and a probe radiating antenna attached to the main surface side of the substrate, wherein the probe receiving antenna is configured to receive a first electromagnetic wave signal radiated from the radiating antenna of the semiconductor element by connecting the power connector and the power terminal, and the probe radiating antenna is configured to radiate a second electromagnetic wave signal that can be received by the receiving antenna provided on the semiconductor element by connecting the power connector and the power terminal.

[0020] The inspection probe head according to the present invention enables bidirectional communication with a semiconductor element using electromagnetic wave signals.

[0021] The inspection probe head according to the present invention is an inspection probe head equipped with a first radiating antenna, comprising: a substrate having a main surface; a power connector attached to the main surface side of the substrate and connected to the power terminal of the semiconductor element for supplying power to the semiconductor element; and a first receiving antenna attached to the main surface side of the substrate and connecting the power connector and the power terminal to receive electromagnetic wave signals radiated from the first radiating antenna of the semiconductor element. Furthermore, the first receiving antenna is formed on the main surface of the substrate, thereby enabling effective reception of electromagnetic wave signals from the semiconductor element.

[0022] In this way, when inspecting semiconductor devices by receiving electromagnetic wave signals, it becomes possible to supply power via a power connector and simultaneously receive electromagnetic wave signals with a loop antenna. This makes it possible to inspect electromagnetic wave signals in addition to the conventional electrical signal inspection of semiconductor devices, simplifying the previously complex inspection of semiconductor devices. Furthermore, it eliminates the need for expensive probe cards and high-performance, expensive testers that were previously required for electrical inspection of semiconductor devices due to the large number of signal pins on the semiconductor devices, resulting in cost reductions. Significant time is also reduced for preparing inspection equipment, including lead times and setup times. Moreover, it enables the transmission and reception of electromagnetic wave signals between semiconductor devices, between chiplets, and within chiplets, thus contributing to the SDGs.

[0023] Front view and bottom view of one embodiment of the present invention Front view of one embodiment of the present invention Bottom view of one embodiment of the present invention Perspective view of the first loop antenna in one embodiment of the present invention Top view of an example of a semiconductor element to be inspected in the present invention Example of internal inspection flow in a semiconductor element to be inspected in the present invention Example of frequency generation in a semiconductor element to be inspected in the present invention Bottom view of a probe head for incorporating multiple loop antennas Positional relationship between loop antenna and power connector in the front view of the present invention Front view when the power connector of the present invention is connected to a power terminal Top view of an example of multiple semiconductor elements to be inspected in the present invention Bottom view of one embodiment for simultaneously inspecting multiple semiconductor elements in the present invention Bottom view of one embodiment for simultaneously inspecting multiple semiconductor elements in the present invention Bottom view of one embodiment having multiple loop antennas in the present invention Top view of an example of a semiconductor element to be inspected in the present invention Bottom view of one embodiment having multiple loop antennas in the present invention Top view of an example of a semiconductor element to be inspected in the present invention Top view of one embodiment having multiple loop antennas in the present invention Top view of an example of a semiconductor element to be inspected in the present invention Bottom view of one embodiment having multiple loop antennas in the present invention Layer configuration of a substrate in one embodiment of the present invention Perspective view of loop antennas in adjacent layers of the present invention

[0024] The embodiments will be described below with reference to the drawings.

[0025] Furthermore, in the description of the drawings, the same reference numeral is used for identical elements, and redundant explanations are omitted. Also, the drawings are intended for understanding purposes, and the actual dimensional ratios do not necessarily match those of reality. Moreover, it is understood that there are parts where the dimensional relationships and ratios differ between drawings. The embodiments shown below are illustrative examples of devices and methods for realizing the technical idea of ​​this invention, and the embodiments of this invention do not specify the materials, shapes, structures, arrangements, etc. of the components as described below.

[0026] Figure 1 shows a front view and a bottom view of one embodiment of the present invention. Figure 1(a) is a front view, and Figure 1(b) is a bottom view.

[0027] Figure 2 is a front view of one embodiment of the present invention, and is an enlarged view of Figure 1(a).

[0028] Figure 3 is a bottom view of one embodiment of the present invention, and is an enlarged view of Figure 1(b).

[0029] In the front view and bottom view of Figure 1, the inspection connection device according to the embodiment of the present invention is an inspection probe head, which is used for inspection using electromagnetic wave signals emitted from a semiconductor element having a power terminal for receiving power and a first radiating antenna for emitting electromagnetic wave signals.

[0030] In Figure 1, the semiconductor element to be inspected, which is not shown in the illustration, is positioned so that the surface on which the power terminal and the first radiating antenna are formed faces the inspection connection device.

[0031] The inspection connection device shown in Figure 1 comprises a power connector 2, a first loop antenna 3, and a probe head 1 that holds the power connector 2 and the first loop antenna 3 with the tip of the power connector 2 and the loop portion of the first loop antenna 3 exposed on the lower surface.

[0032] The probe head 1 has the function of holding the power connector 2 and the first loop antenna 3, but the shape of the probe head 1 in the bottom view can be various shapes such as circular, square, or polygonal depending on the situation.

[0033] In Figure 2, the substrate 4 has a main surface 5 which is the bottom surface and a back surface 6 which is the top surface. The power connector 2 preferably uses a probe made of a conductive material. Any type of probe such as a vertical probe, a cantilever probe, or a MEMS type can be used for the power connector 2, but here we will proceed with the explanation using a cantilever probe.

[0034] The power connector 2 extends diagonally downward from the lower surface of the probe head 1 and has a curved portion, giving it a cantilever-type probe shape. Its tip is electrically connected to the power terminal with elasticity, and it has a base end that includes a wiring member that penetrates from the main surface of the substrate to the back surface of the substrate opposite the main surface of the substrate. Furthermore, the base end is exposed on the back surface of the probe head 1 and is connected to the power connector, and is configured to supply power from an external source to the power terminal of the semiconductor element via the base end and the power connector attached to the main surface of the substrate.

[0035] Furthermore, the first loop antenna 3 includes two wiring members that penetrate from the main surface of the substrate to the back surface of the substrate opposite the main surface of the substrate, and the two wiring members form the base end of the first loop antenna 3 and are further connected to the first loop antenna 3, and are configured so that the signal received by the first loop antenna 3 can be extracted to the outside from the back surface via the base end.

[0036] Furthermore, the loop portion of the first loop antenna is exposed on the main surface of the substrate of the probe head 1, and the two base ends are shown in an example where their extension directions coincide with the direction normal to the surface formed by the loop portion, but it is not necessarily required that they coincide with the normal direction.

[0037] In Figure 3, the relative positional relationship between the tip of the power connector 2 on the probe head 1 and the loop portion of the first loop antenna 3 corresponds to the relative positional relationship between the power terminal of the semiconductor element to be inspected and the first radiating antenna.

[0038] Furthermore, the power connector 2 and the loop portion of the first loop antenna 3 are held on the probe head 1 with a predetermined positional accuracy so that they can be electrically connected to the power terminal of the semiconductor element under inspection and receive electromagnetic wave signals from the first radiating antenna, respectively, during inspection, that is, so that they can be accurately connected and received.

[0039] Here, "accurately connected and receiving" means that the power connector 2 is electrically connected to the power terminal of the semiconductor element so that a predetermined measurement accuracy can be obtained, and the first loop antenna 3 is installed in a proximity to the first radiating antenna of the semiconductor element so that it can receive electromagnetic wave signals.

[0040] Figure 4 is a perspective view of the first loop antenna in one embodiment of the present invention, showing the antenna with the surrounding power connectors and probe head omitted.

[0041] When the first loop antenna 3 in FIG. 4 is incorporated into the probe head, as shown in FIG. 2, the two base end portions of the first loop antenna are exposed on the back surface of the probe head 1, and the loop portion of the first loop antenna is exposed on the main surface of the probe head 1.

[0042] Next, FIG. 5 shows a top view of an example of the semiconductor element to be inspected according to the present invention.

[0043] In FIG. 5, the semiconductor element 7 has a power supply terminal 8 and a first radiation antenna 9.

[0044] At this time, the power supply terminal 8 has a function of receiving power, and the first radiation antenna 9 has a function of radiating an electromagnetic wave signal.

[0045] Here, consider the flow of the functions of the semiconductor element 7.

[0046] FIG. 6 shows an example of an internal inspection flow in the semiconductor element to be inspected according to the present invention. The description will proceed with an example of a total of five stages of flow: power reception 10 as the first stage of flow, BIST 11 as the second stage of flow, frequency generation 12 as the third stage of flow, power amplification 13 as the fourth stage of flow, and electromagnetic wave signal radiation 14 as the fifth stage of flow. However, the power amplification 13 is not necessarily required in the internal inspection flow.

[0047] In the power reception 10 which is the first stage of the flow in FIG. 6, power is received from the power supply terminal 8 of the semiconductor element 7 shown in FIG. 5 to the semiconductor element 7.

[0048] Next, in the second stage of the flow after power is received from the semiconductor element 7 in the first stage of the flow in FIG. 6, inside the semiconductor element, the semiconductor element itself automatically performs an inspection of whether the semiconductor element itself is a good product or a defective product by an embedded self - test such as BIST (Built - in self - test). As a determination result, for example, a good product is output as a HIGH signal and a defective product is output as a LOW signal, and this signal can be input to the frequency generation 12.

[0049] Also here, FIG. 7 shows an example of the frequency generation 12 which is the third stage of the flow in FIG. 6 and constitutes a ring oscillator.

[0050] A ring oscillator is one example of a circuit that generates frequency. A typical ring oscillator consists of three or more odd-numbered inverters connected in series, which allows it to generate frequency.

[0051] At this point, consider a ring oscillator in which a NAND15 is used as a substitute for an inverter in the first stage gate, as shown in Figure 7.

[0052] Here, as shown in Figure 7, the ring oscillator is composed of three gates, with the first gate being a NAND gate 15, the second gate being a first inverter 16, and the third gate being a second inverter 17.

[0053] Now, let's consider the operation of the ring oscillator in Figure 7.

[0054] Considering the operation of NAND 15 in Figure 7, when a HIGH signal, which is a good result from BIST 11, is input to one input terminal 18 of NAND 15, NAND 15 functions as an inverter that inverts the signal at the other input terminal 20 of NAND 15.

[0055] At this time, the NAND 15 functions as an inverter, and together with the first inverter 16 and the second inverter 17, it functions as a ring oscillator composed of an odd number of inverters, i.e., three stages of inverters. Therefore, the frequency f is output from the output terminal 19 of the ring oscillator in Figure 7.

[0056] Here, if we let τ1 be the delay of NAND 15, τ2 be the delay of the first inverter 16, and τ3 be the delay of the second inverter 17, then generally, the output frequency f can be expressed as f = 1 / ((2 x (τ1 + τ2 + τ3)).

[0057] Furthermore, if a LOW signal, which indicates a defective product as a result of the BIST 11's judgment, is input to one of the NAND input terminals 18, the NAND 15 will not operate, and no frequency will be output from the output terminal 19 of the ring oscillator in Figure 7.

[0058] Therefore, if the BIST 11 determines that the product is good, the frequency f will be output from the output terminal 19 of the ring oscillator, and if the BIST 11 determines that the product is defective, no frequency will be output from the output terminal 19 of the ring oscillator.

[0059] Furthermore, in this case, one semiconductor element can be divided into two or more areas, and a BIST (Best Inspector System) can be individually provided for each divided area to automatically inspect whether each area is a good or defective product. As a result of the judgment for each area, for example, a HIGH signal can be output for a good product and a LOW signal for a defective product.

[0060] Here, let's assume that one semiconductor element is divided into two areas, with one of the divided areas being called the first area and the other being called the second area.

[0061] Let's consider the case where the first area has a first BIST and the second area has a second BIST.

[0062] In this case, by staggering the timing of outputting the results of the first BIST and the second BIST, it is possible to output the results of the first BIST and the second BIST separately, with a time delay between them.

[0063] Alternatively, the first BIST may be equipped with a first ring oscillator, and the second BIST with a second ring oscillator, and the output frequencies of the first and second ring oscillators can be changed.

[0064] For example, if the inverter stage of the first ring oscillator is set to 3 stages and the inverter stage of the second ring oscillator is set to 5 stages, the frequency output from the second ring oscillator will be lower than that of the first ring oscillator.

[0065] Furthermore, by setting the inverter stage of the first ring oscillator to three stages, and similarly setting the inverter stage of the second ring oscillator to three stages, and adding a capacitor between the inverters of the second ring oscillator for the purpose of time delay, the frequency output from the second ring oscillator will be lower than that of the first ring oscillator.

[0066] Next, we consider the fourth-stage flow after the third-stage flow in Figure 6.

[0067] In Figure 6, a general trunk-type clock circuit is used as the power amplifier 13 of the fourth stage of the flow. By bundling and connecting the gates of the final stage of the trunk-type clock circuit, the power of the signal obtained from the frequency generation of the third stage can be amplified. Furthermore, it is possible to reduce the impedance of the final stage of the trunk-type clock circuit, and the signal obtained by bundling and connecting the gates of the final stage of the trunk-type clock circuit can be sent to the electromagnetic wave signal radiation of the fifth stage.

[0068] Furthermore, it is possible to divide the semiconductor element into two or more areas and provide a separate power amplification unit for each of these divided areas, although a power amplification unit is not always necessary.

[0069] Next, we consider the fifth-stage flow after the fourth-stage flow.

[0070] As the fifth stage flow in Figure 6, electromagnetic wave signal radiation 14, for example, by connecting the signal obtained by bundling and connecting the gates of the final stage of the trunk-type clock circuit in the power amplifier 13 to the first radiating antenna 9 included in the semiconductor element 7, it becomes possible to radiate electromagnetic wave signals from the first radiating antenna 9.

[0071] At this time, if we consider shapes such as a loop antenna, a monopole antenna, or a dipole antenna as the first radiating antenna 9 for electromagnetic wave signal radiation 14, when each shape of antenna is formed on the upper surface of a semiconductor element, it will be affected to some extent by the GND plane of the semiconductor element, so directivity does not need to be particularly considered, and each shape of antenna can be used as if it were non-directional.

[0072] Furthermore, it is also possible to divide the semiconductor element into two or more areas and individually provide a first radiating antenna, which has the function of radiating electromagnetic wave signals, in each of the divided areas.

[0073] In this case, the shape of the first radiating antenna can be selected from options such as a monopole antenna, dipole antenna, or loop antenna, and multiple sizes can also be selected.

[0074] Furthermore, even when a semiconductor element is divided into two or more areas, it is possible to provide a single first radiating antenna that has the function of emitting electromagnetic wave signals, and for the divided areas to share and utilize the single first radiating antenna.

[0075] As described above in Figure 6, an example of the internal inspection flow for the semiconductor device to be inspected according to the present invention, next, a specific method for receiving electromagnetic wave signals from the semiconductor device using an inspection connection device will be described.

[0076] Normally, when the first radiating antenna 9 of the semiconductor element and the first loop antenna 3 of the inspection connection device are in close proximity, the electromagnetic wave signal radiated from the first radiating antenna 9 is received by the first loop antenna 3.

[0077] In the test connection device shown in Figure 1, when receiving an electromagnetic wave signal radiated from the first radiating antenna 9 of the semiconductor element 7, the tip of the power connector 2 is electrically connected to the power terminal 8, and the first loop antenna 3 receives the electromagnetic wave signal from the first radiating antenna 9 at the same time.

[0078] As a result, for example, the tip of the power connector 2 is electrically connected to the power terminal, thereby supplying power to the semiconductor element 7. Furthermore, as shown in the fifth step of the internal inspection flow of the semiconductor element to be inspected in the present invention, as shown in Figure 6, the electromagnetic wave signal radiated from the first radiating antenna 9 of the semiconductor element is received by the loop portion of the first loop antenna 3, and the electromagnetic wave signal is detected by the inspection connection device.

[0079] Furthermore, while the first loop antenna is described here as an antenna with the function of receiving electromagnetic wave signals, it is also possible to give it the function of an antenna with the function of radiating electromagnetic wave signals, and thus it is possible to give it the function of both a receiving antenna and a radiating antenna.

[0080] Thus, the test connection device functions as a probe card that connects to the semiconductor element being tested.

[0081] Furthermore, while the loop portion of the first loop antenna 3 is intended to receive electromagnetic wave signals, if conductive material is used to form the loop portion, or if protective or short-circuit prevention covering material is used around it, the characteristics of the antenna, such as frequency bandwidth and gain, when receiving electromagnetic wave signals will differ depending on the dielectric constant and other properties of the covering material, as well as the radius of the loop portion.

[0082] Furthermore, by connecting the two base ends of the first loop antenna 3 to an amplifier, the electromagnetic wave signal received from the loop portion of the first loop antenna 3 can be amplified by the amplifier.

[0083] Furthermore, by connecting the electromagnetic wave signal amplified by the amplifier to a spectrum analyzer, it is possible to obtain frequency information of the electromagnetic wave signal using the spectrum analyzer.

[0084] In this case, as explained in Figures 6 and 7, for example, if the BIST 11 determines that the product is good, an electromagnetic wave signal will be emitted from the first radiating antenna 9, and this electromagnetic wave signal can be received by the first loop antenna 3. Furthermore, by connecting the two base ends of the first loop antenna 3 to an amplifier or the like, and then to a spectrum analyzer or the like, frequency information of the electromagnetic wave signal can be obtained. Thus, the inspection connection device can obtain inspection result information indicating that the semiconductor element being inspected is good.

[0085] Similarly, for example, if the BIST11 determines that the product is defective, the first radiating antenna 9 does not emit an electromagnetic wave signal, and therefore the first loop antenna 3 does not receive an electromagnetic wave signal. Furthermore, even if the two base ends of the first loop antenna 3 are connected to an amplifier and then to a spectrum analyzer, the electromagnetic wave signal itself is not acquired, and therefore the frequency information of the electromagnetic wave signal is not acquired. Thus, the inspection connection device can obtain inspection result information indicating that the semiconductor element being inspected is defective.

[0086] Figure 8 is a bottom view of a probe head for incorporating multiple loop antennas.

[0087] When installing multiple loop antennas on a probe head, it is possible to share a common guide hole for the two base ends of adjacent loop antennas, rather than individually preparing a guide hole for each loop antenna to expose its two base ends to the upper surface of the probe head.

[0088] Figure 8 shows a situation where the two base ends of multiple loop antennas of the same size are exposed on the upper surface of the probe head by a common guide hole 21. The same concept applies even when multiple loop antennas with different loop radii are installed on the probe head.

[0089] Next, Figure 9 is a diagram showing the positional relationship between the loop antenna and the power connector in the front view of the present invention.

[0090] As shown in Figure 9, consider an inspection connection device in which the tip of the power connector 2 extends from the lower surface of the loop portion of the first loop antenna 3 of the probe head 1 by a length H1.

[0091] When considering alignment assuming that H1 is 300 μm, for example, alignment is performed by moving the stage on which the semiconductor element is mounted in a direction parallel to the mounting surface, or by rotating it around the plane normal direction of the mounting surface as the central axis. It is also possible to perform the alignment while photographing the alignment marks provided on the inspection connection device using an imaging device such as a CCD camera placed on the stage.

[0092] At this time, when an imaging device placed on the stage captures an image of the alignment marks provided on the inspection connection device, relative position information between the stage on which the semiconductor element is mounted and the inspection connection device can be obtained by image processing of the captured image.

[0093] Based on this relative position information, the position and orientation of the stage are adjusted so that the tip of the power connector 2 can electrically contact the power terminal of the semiconductor element.

[0094] Furthermore, when the tip of the power connector 2 and the power terminal of the semiconductor element are in the same position in a plan view, and the tip of the power connector 2 is brought into contact with the power terminal of the semiconductor element, the positional relationship between the tip of the power connector 2 and the loop portion of the first loop antenna 3 corresponds to the positional relationship between the power terminal of the semiconductor element and the first radiating antenna. Therefore, the loop portion of the first loop antenna 3 is positioned to receive electromagnetic wave signals from the first radiating antenna of the semiconductor element.

[0095] Next, Figure 10 shows a front view of the power connector of the present invention when it is connected to a power terminal.

[0096] In Figure 10, when bringing a semiconductor element and a test connection device close together so that the power connector is pressed against the power terminal of the semiconductor element with a predetermined needle pressure, for example, overdrive is applied so that the tip of the power connector is pressed against the semiconductor element.

[0097] In this case, the distance H2 between the loop portion of the first loop antenna and the first radiating antenna of the semiconductor element is set such that the distance is such that the loop portion of the first loop antenna can receive electromagnetic wave signals from the first radiating antenna of the semiconductor element, and the semiconductor element and the test connection device are brought closer together.

[0098] Here, the distance between the loop portion of the first loop antenna and the first radiating antenna of the semiconductor element can be controlled within a certain range by setting H1 and the overdrive setting in Figure 9.

[0099] For example, if H1 in Figure 9 is 300 μm and the overdrive application is 100 μm, then the spacing H2 will be approximately 200 μm.

[0100] At this time, the loop portion of the first loop antenna will be in close proximity to the semiconductor element, approximately 200 μm away. However, if the loop portion of the first loop antenna is deformed or otherwise separated from the probe head, the loop portion may come into contact with the semiconductor element, potentially damaging it.

[0101] Therefore, ideally, the loop portion of the first loop antenna should be fixed in place so that it does not move, such as by connecting it to the lower surface of the probe head.

[0102] In this case, the loop portion of the first loop antenna can be attached to the lower surface of the probe head with an adhesive material to prevent it from peeling off, or the loop portion of the first loop antenna can be directly formed on the lower surface of the probe head using a conductive material or the like by a technique such as photolithography.

[0103] Furthermore, in the test connection device shown in Figure 1, the power connector and the first loop antenna are positioned on the probe head with a predetermined positional accuracy.

[0104] In this case, by aligning the power connector with the power terminal of the semiconductor element, the first loop antenna is simultaneously aligned with the first radiating antenna of the semiconductor element.

[0105] Therefore, alignment between the inspection connection device and the semiconductor element is easy.

[0106] Next, we will describe the test connection device corresponding to the semiconductor element shown in Figure 5.

[0107] The semiconductor element 7 shown in Figure 5 has a power terminal 8 and a first radiating antenna 9. The power terminal 8 has the function of receiving power to the semiconductor element 7, and the first radiating antenna 9 has the function of radiating electromagnetic wave signals.

[0108] In this state, multiple semiconductor elements are typically arranged in a wafer configuration.

[0109] Figure 11 is a top view of an example of multiple semiconductor elements to be inspected according to the present invention.

[0110] In Figure 11, each of the multiple semiconductor elements 7 arranged in a row has one power supply terminal 8 and one first radiating antenna 9.

[0111] Here, Figure 12 is a bottom view of one embodiment of the present invention for simultaneously inspecting multiple semiconductor elements, and is an inspection connection device.

[0112] In Figure 12, the probe head 1 has a plurality of inspection units 22, each of which has one power connector 2 and a first loop antenna 3. The positional relationship between the plurality of power connectors 2 and the plurality of first loop antennas 3 in Figure 12 corresponds to the positions of the plurality of power terminals 8 and the plurality of first radiating antennas 9 in the plurality of semiconductor elements 7 in Figure 11.

[0113] In other words, in Figure 12, the probe head 1 is configured such that multiple inspection units 22 are arranged so that the tip of the power connector 2 corresponds to the loop portion of the first loop antenna 3, and the power terminal 8 of each semiconductor element 7 in Figure 11 corresponds to the first radiating antenna 9, respectively, making it possible to inspect multiple semiconductor elements simultaneously.

[0114] Furthermore, in the wafer state, semiconductor elements may be arranged in a grid pattern. In this case as well, this can be handled by assembling the inspection unit 22 in a grid pattern on the probe head 1.

[0115] Furthermore, while Figure 12 shows an example in which a first loop antenna of the same shape and size is incorporated into each inspection unit 22, other examples include monopole antennas, dipole antennas, and other loop antennas with different loop radii, which can also be used as substitutes for the first loop antenna. In such cases, it becomes possible to receive multiple electromagnetic wave signals with different frequency characteristics from semiconductor elements, depending on the characteristics of the antenna installed in each inspection unit.

[0116] Next, Figure 13 is a bottom view of one embodiment of the present invention for simultaneously inspecting multiple semiconductor elements, and shows a GND pattern 23 for separating multiple inspection units 22.

[0117] The GND pattern 23 prevents electromagnetic wave signals from other semiconductor elements adjacent to each semiconductor element 7, which is the object being measured by each inspection unit 22. As a result, each inspection unit 22 can properly receive electromagnetic wave signals from each semiconductor element 7, preventing erroneous reception and interference, and enabling simultaneous measurement of multiple semiconductor elements.

[0118] Next, Figure 14 is a bottom view of one embodiment of the present invention having multiple loop antennas.

[0119] In Figure 14, the probe head 1 has a power connector 2, a first loop antenna 3, and a second loop antenna 24.

[0120] Here, as shown in Figure 15, we consider a semiconductor element 7 to be inspected that incorporates a first radiating antenna 9 and a second radiating antenna 25.

[0121] In the semiconductor element 7, it is assumed that the first radiating antenna 9 has a first resonant frequency and radiates an electromagnetic wave signal of the first frequency, and the second radiating antenna 25 has a second resonant frequency and radiates an electromagnetic wave signal of the second frequency.

[0122] In this case, the first loop antenna can receive electromagnetic wave signals from the first radiating antenna, but cannot receive electromagnetic wave signals radiated from the second radiating antenna, due to factors such as the dielectric constant of the insulating material used to form the loop portion of the first loop antenna, and the radius of the loop portion, when insulating material is used to protect or prevent electrical short circuits around it.

[0123] Therefore, by providing the probe head 1 with a second loop antenna having characteristics that enable it to receive electromagnetic wave signals radiated from the second radiating antenna, such as the dielectric constant of the conductive material forming the loop section and the protective or short-circuit prevention covering material used around it, as well as characteristics of the radius of the loop section, the second loop antenna can receive electromagnetic wave signals radiated from the second radiating antenna.

[0124] To add further detail, it is known that in loop antennas, changing the radius of the loop section can alter the receiving sensitivity and resolution. Therefore, a first loop antenna having a loop section with a first radius and a second loop antenna having a loop section with a second radius can selectively receive electromagnetic wave signals of different frequencies.

[0125] Next, Figure 16 is a bottom view of one embodiment of the present invention having multiple loop antennas.

[0126] In Figure 16, the probe head 1 has a power connector 2, a first loop antenna 3, and a third loop antenna 26.

[0127] Figure 17 shows a top view of an example of a semiconductor device to be inspected according to the present invention.

[0128] In Figure 17, the semiconductor element 7 has a power terminal 8, a first radiating antenna 9, and a third radiating antenna 27.

[0129] At this time, it is assumed that the power terminal 8 has the function of receiving power, the first radiating antenna 9 has a first resonant frequency and radiates an electromagnetic wave signal of the first frequency, and the third radiating antenna 27 has a third resonant frequency and radiates an electromagnetic wave signal of the third frequency.

[0130] At this time, the first loop antenna is configured to receive electromagnetic wave signals from the first radiating antenna, based on factors such as the dielectric constant of the conductive material forming the loop portion of the first loop antenna and the surrounding protective or short-circuit prevention covering material, as well as the radius of the loop portion. Furthermore, the probe head is positioned to ensure that electromagnetic wave signals from the first radiating antenna are received appropriately.

[0131] Furthermore, a third loop antenna is placed on the probe head that has characteristics such as the dielectric constant of the conductive material forming the loop and the surrounding protective or short-circuit prevention covering material, as well as characteristics such as the radius of the loop, if such materials are used, allowing it to receive electromagnetic wave signals radiated from the third radiating antenna.

[0132] As a result, the electromagnetic wave signals radiated from the first radiating antenna 9 and the third radiating antenna 27 of the semiconductor element 7 can be received by the first loop antenna 3 and the third loop antenna 26.

[0133] Furthermore, in this case, it is also possible to make the radius of the loop portion of the first loop antenna 3 and the characteristics of the third loop antenna 26 identical, for example, the dielectric constant of the conductive material forming the loop portion, or, in the case where a protective or short-circuit prevention covering material is used around it, the characteristics of the covering material, as well as the radius of the loop portion.

[0134] Next, Figure 18 is a bottom view of one embodiment of the present invention having multiple loop antennas, in which a GND pattern 23 is provided to separate the first loop antenna 3 and the third loop antenna 26.

[0135] The GND pattern 23 prevents the intrusion of electromagnetic wave signals from the third radiating antenna 27 adjacent to the first radiating antenna 9 of each semiconductor element 7, which is the object being measured, by the first loop antenna 3. As a result, the first loop antenna 3 can properly receive electromagnetic wave signals from the first radiating antenna 9 of each semiconductor element 7, which is the object being measured, thereby preventing false reception and interference.

[0136] Similarly, the GND pattern 23 prevents the intrusion of electromagnetic wave signals from the first radiating antenna 9 adjacent to the third radiating antenna 27 of each semiconductor element 7, which is the object being measured, by the third loop antenna 26. As a result, the third loop antenna 26 can properly receive electromagnetic wave signals from the third radiating antenna 27 of each semiconductor element 7, which is the object being measured, thereby preventing false reception and interference.

[0137] Furthermore, although this explanation focuses specifically on loop antennas, other antenna shapes such as monopole antennas and dipole antennas, which differ in shape from loop antennas, can also be used as alternatives to the third type of loop antenna. In addition, it is possible to incorporate a fourth loop antenna and a fifth loop antenna in addition to the third type of loop antenna.

[0138] In this case, as shown in Figure 18, the first loop antenna 3 and the third loop antenna 26 are used as functions for receiving electromagnetic wave signals. However, it is also possible to use the first loop antenna 3 as a receiving function for electromagnetic wave signals and the third loop antenna 26 as a radiating function for electromagnetic wave signals, in which case it can be used as a means of bidirectional communication.

[0139] For example, in Figure 17, if we assume that the first radiating antenna 9 in the semiconductor element 7 has the function of a radiating antenna, and the third radiating antenna 27 has the function of receiving rather than radiating, then the first loop antenna 3 can receive the electromagnetic wave signal radiated from the first radiating antenna 9 of the semiconductor element 7, and the third radiating antenna 27 of the semiconductor element 7 can receive the electromagnetic wave signal radiated from the third loop antenna 26.

[0140] Furthermore, at this time, it is also possible to change the shape of the first radiating antenna 9, the third radiating antenna 27, the first loop antenna 3, and the third loop antenna 26 in the semiconductor element 7 to a loop antenna, monopole antenna, or dipole antenna, thereby providing electromagnetic wave signal radiation and reception functions.

[0141] Next, Figure 19 shows the layer configuration of the substrate in one embodiment of the present invention, which constitutes the probe head.

[0142] In Figure 19, the substrate 4 has a layer configuration in which a first metal layer 28 is located on the main surface 5 of the substrate, a second metal layer 29 is located in an adjacent layer separated by an insulating layer, a third metal layer 30 is located in an adjacent layer separated by another insulating layer, and a fourth metal layer 31 is located on the back surface of the substrate.

[0143] At this time, a loop antenna is formed on the first metal layer 28 of the substrate and the second metal layer 29 of the adjacent substrate.

[0144] Next, Figure 20 is a perspective view of the loop antenna in the adjacent layer of the present invention, with the surrounding insulating layer, wiring other than the components of the loop antenna, and solid layers removed.

[0145] In Figure 20, a loop portion 32 of the loop antenna of the first metal layer is formed on the first metal layer 28 of the substrate. One terminal of the loop portion 32 of the loop antenna of the first metal layer is connected to one terminal of a lead wire 35 on the first metal layer. The other terminal of the loop portion 32 of the loop antenna of the first metal layer is connected to one terminal of a VIA 34 connecting the first metal layer and the second metal layer. The other terminal of the VIA 34 connecting the first metal layer and the second metal layer is connected to one terminal of the loop portion 33 of the loop antenna of the second metal layer formed on the second metal layer 29. The other terminal of the lead wire 35 and the other terminal of the loop portion 33 of the loop antenna of the second metal layer are connected to the base end portion 36 of the loop antenna and are exposed on the back surface of the substrate.

[0146] In this case, if the radius of the loop portion 32 of the loop antenna of the first metal layer and the radius of the loop portion 33 of the loop antenna of the second metal layer are the same, and the receiving characteristics of the loop portion 32 of the loop antenna of the first metal layer and the loop portion 33 of the loop antenna of the second metal layer are the same, then the probe head incorporating the loop portion 32 of the loop antenna of the first metal layer and the loop portion 33 of the loop antenna of the second metal layer will be able to receive more electromagnetic wave signals from the semiconductor element being measured.

[0147] At the same time, it is also possible to form the loop portion of the loop antenna on the third metal layer 30 of the substrate and the fourth metal layer 31 of the substrate on the back side in the same manner, and to electrically connect the loop portions on each metal layer using a VIA or the like.

[0148] Furthermore, although the number of metal layers in the substrate is set to four in Figure 19, it is possible to increase the number of layers to six, eight, or even more, and to form multiple loop sections in each layer in the vertical and horizontal directions when viewed from the main surface of the substrate. It is also possible to use different types of printed circuit boards as the substrate, such as rigid substrates, ceramic substrates, or flexible substrates.

[0149] Next, in Figure 5, we consider the case where the semiconductor element 7 has a power supply terminal 8. However, there are semiconductor elements that can receive power from various sources, such as photovoltaic (PV) power generation, ultraviolet irradiation, and wireless power transfer. In these elements, instead of receiving power through metal terminals, there are also power supply terminals that serve as light receiving terminals for photovoltaic (PV) power generation, light receiving terminals for power generation using ultraviolet light, and power supply terminals for power generation via wireless power transfer, and these can be used as substitutes.

[0150] For receiving power from semiconductor elements that can receive power from sources such as solar power generation (PV), ultraviolet irradiation, and wireless power transfer, as described above, an inspection connection device having the function of irradiating visible light for solar power generation (PV), irradiating ultraviolet light, or irradiating electromagnetic waves for wireless power transfer can also be used as an alternative to supplying voltage by the power connector of the present invention.

[0151] In yet another embodiment, by having the first loop antenna inside the first semiconductor element, it is also possible to receive electromagnetic wave signals radiated from a second semiconductor element, which has the function of radiating electromagnetic wave signals by the first radiating antenna, with the first loop antenna of the first semiconductor element.

[0152] In this case, the second semiconductor element emits an electromagnetic wave signal, which is received by the first semiconductor element. Conversely, the first semiconductor element can also receive an electromagnetic wave signal from its first radiating antenna with its loop antenna. As the two semiconductor elements exchange electromagnetic wave signals with each other, signal communication between the semiconductor elements becomes possible without the need for wire connections.

[0153] In another embodiment using a similar method, by having a first loop antenna inside the first chiplet, it is also possible to receive electromagnetic wave signals radiated from a second chiplet, which has the function of radiating electromagnetic wave signals by the first radiating antenna, with the first loop antenna of the first chiplet.

[0154] In this case, the second chiplet emits an electromagnetic wave signal, which is received by the first chiplet, and vice versa. Conversely, the first chiplet can also receive an electromagnetic wave signal from its first radiating antenna with the loop antenna of the second chiplet. As a result, the two chiplets exchange electromagnetic wave signals with each other, enabling signal communication between the chiplets without the need for wire connections.

[0155] Furthermore, considering the situation within the same chiplet, although there are multiple semiconductor elements within the same chiplet, by having a loop antenna in the third semiconductor element within the chiplet that has the function of receiving electromagnetic wave signals radiated from the chiplet, it is also possible to acquire electromagnetic wave signals from a fourth semiconductor element within the same chiplet that has the function of radiating electromagnetic wave signals using the first radiating antenna.

[0156] In this case, the fourth semiconductor element within the chiplet emits an electromagnetic wave signal, which is received by the third semiconductor element within the same chiplet. Conversely, the electromagnetic wave signal from the first radiating antenna of the third semiconductor element can be received by the loop antenna of the fourth semiconductor element. This allows the two semiconductor elements to exchange electromagnetic wave signals with each other, eliminating the need for wire connections within the chiplet.

[0157] Furthermore, since chiplets typically include an interposer for connecting semiconductor elements, it is possible to install a first radiating antenna that emits electromagnetic signals and a loop antenna that receives electromagnetic signals within the interposer.

[0158] In another embodiment, although only the power connector is shown as an electrical connector in Figure 1, it is also possible to install other power connectors on the probe head that have the function of supplying power at the same potential or a different potential, in addition to the power connector.

[0159] In another embodiment of a similar approach, in addition to the power connector, a GND connector that supplies a GND-level potential can also be installed on the probe head.

[0160] In addition to the power connector, it is also possible to install an electrical connector on the probe head that has the function of transmitting, receiving, or transmitting / receiving electrical signals.

[0161] As described above, the inspection connection device for receiving electromagnetic wave signals from semiconductor elements of the present invention has been described with reference to embodiments. The inspection probe head is equipped with a first radiating antenna and comprises a substrate having a main surface, a power connector attached to the main surface side of the substrate and connected to the power terminal of the semiconductor element for supplying power to the semiconductor element, and a first receiving antenna attached to the main surface side of the substrate and connecting the power connector and the power terminal to receive electromagnetic wave signals radiated from the first radiating antenna of the semiconductor element, wherein the first receiving antenna is formed on the main surface of the substrate. This inspection probe head makes it possible to effectively receive electromagnetic wave signals from semiconductor elements.

[0162] In this way, when inspecting semiconductor devices by receiving electromagnetic wave signals, it becomes possible to supply power via a power connector and simultaneously receive electromagnetic wave signals via a loop antenna. This allows for inspection by receiving electromagnetic wave signals in addition to conventional inspection of semiconductor devices by electrical signals, simplifying the previously complex inspection of semiconductor devices. Furthermore, it eliminates the need for expensive probe cards and high-performance, expensive testers that were previously required for electrical inspection of semiconductor devices due to the large number of signal pins on the semiconductor devices, resulting in cost reductions. Significant time is also reduced for preparing inspection equipment, including lead times and setup times. Moreover, it enables the transmission and reception of electromagnetic wave signals between semiconductor devices, between chiplets, and within chiplets, thus contributing to the SDGs.

[0163] In the inspection connection device for receiving electromagnetic wave signals from semiconductor elements of the present invention, when performing inspection by receiving electromagnetic wave signals from semiconductor elements, it is possible to supply power by a power connector and simultaneously receive electromagnetic wave signals by a loop antenna. This makes it possible to perform inspection by receiving electromagnetic wave signals in addition to conventional inspection by electrical signals of semiconductor elements, simplifying the inspection of semiconductor elements, reducing costs by eliminating the need for expensive probe cards and high-performance, expensive testers that were previously required for electrical inspection of semiconductor elements due to the large number of signal pins on the semiconductor elements, significantly shortening the lead time and setup time required for preparing the inspection device, and further contributing to the SDGs by enabling the transmission and reception of electromagnetic wave signals between semiconductor elements, between chiplets, and within chiplets.

[0164] 1... Probe head 2... Power connector 3... First loop antenna 4... Circuit board 5... Main surface of circuit board 6... Back surface of circuit board 7... Semiconductor element 8... Power terminal 9... First radiating antenna 10... Power receiving 11... BIST 12... Frequency generation 13... Power amplification 14... Electromagnetic wave signal radiation 15... NAND 16... First inverter 17... Second inverter 18... One input terminal of NAND 19... Output terminal of ring oscillator 20... Other input terminal of NAND 21... Common guide hole 22... Test unit 23... GND pattern 24... Second loop antenna 25... Second radiating antenna 26... Third loop antenna 27... Third radiating antenna 28... First metal layer of circuit board 29... Second metal layer of circuit board 30... Third metal layer of circuit board 31... Fourth metal layer of circuit board 32... Loop portion of the loop antenna of the first metal layer 33... Loop portion of the loop antenna of the second metal layer 34... VIA connecting the first and second metal layers 35... Lead wire in the first metal layer 36... Base end of the loop antenna

Claims

1. A probe head for inspecting a semiconductor element equipped with a first radiating antenna, comprising: a substrate having a main surface; a power connector attached to the main surface side of the substrate and connected to the power terminal of the semiconductor element for supplying power to the semiconductor element; and a first receiving antenna attached to the main surface side of the substrate and having an annular coil for receiving electromagnetic wave signals radiated from the first radiating antenna of the semiconductor element by connecting the power connector to the power terminal, wherein the power connector is positioned on the main surface such that when it is electrically connected to the power terminal of the semiconductor element to be inspected, the annular coil is positioned to correspond to the first radiating antenna of the semiconductor element, so that the radiation pattern radiated from the first radiating antenna falls within the annular shape of the annular coil, and the power connector has a bendable structure that allows the distance between the surface of the semiconductor element and the first receiving antenna to be reduced when it contacts the power terminal of the semiconductor element.

2. The inspection probe head according to claim 1, wherein the first receiving antenna includes a first loop antenna having a first radius and a second loop antenna having a second radius different from the first radius, and the second loop antenna is positioned inside the first loop antenna.

3. The inspection probe head according to claim 1, characterized in that the first receiving antenna includes a first loop antenna and a second loop antenna positioned to the side of the first loop antenna.

4. The inspection probe head according to claim 1, characterized in that the first receiving antenna has a first loop antenna and a second loop antenna laminated with an insulating layer in a direction intersecting the extending direction of the main surface.

5. A probe head for inspecting semiconductor elements equipped with a first radiating antenna, comprising a plurality of inspection units formed on a substrate having a main surface and a size corresponding to the size of the semiconductor element, and capable of simultaneously measuring a plurality of the semiconductor elements formed on a semiconductor wafer, wherein each inspection unit comprises: a power connector attached to the main surface side of the substrate and connected to the power terminal of the semiconductor element for supplying power to the semiconductor element; and a receiving antenna attached to the main surface side of the substrate and having a ring coil for receiving electromagnetic wave signals radiated from the first radiating antenna of the semiconductor element by connecting the power connector to the power terminal, wherein the power connector is positioned on the main surface such that when it is electrically connected to the power terminal of the semiconductor element to be inspected, the ring coil is positioned to correspond to the first radiating antenna of the semiconductor element, so that the radiation pattern radiated from the first radiating antenna falls within the ring of the ring coil, and the power connector has a bendable structure that allows the distance between the surface of the semiconductor element and the receiving antenna to be reduced when it contacts the power terminal of the semiconductor element.

6. A probe head for inspecting a semiconductor element, comprising a radiating antenna and a receiving antenna, comprising: a substrate having a main surface; a power connector attached to the main surface side of the substrate and connected to the power terminal of the semiconductor element for supplying power to the semiconductor element; a probe receiving antenna having an annular coil attached to the main surface side of the substrate; and a probe radiating antenna, wherein the probe receiving antenna is configured to receive a first electromagnetic wave signal radiated from the radiating antenna of the semiconductor element by connecting the power connector and the power terminal; the probe radiating antenna is configured to radiate a second electromagnetic wave signal that can be received by the receiving antenna provided on the semiconductor element by connecting the power connector and the power terminal; the inspection probe head is positioned above the semiconductor element to be inspected; and when the power connector is electrically connected to the power terminal of the semiconductor element to be inspected, the annular coil is positioned on the main surface such that it corresponds to the radiating antenna of the semiconductor element, so that the radiation pattern radiated from the radiating antenna falls within the annular shape of the annular coil. The inspection probe head is characterized in that the power connector has a flexible structure that allows the distance between the surface of the semiconductor element and the probe receiving antenna and the probe radiating antenna to be reduced when it contacts the power terminal of the semiconductor element.

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