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Integrated circuit including through-substrate conductive structure and method of manufacturing the same

A conductive structure and integrated circuit technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as complex design

Active Publication Date: 2015-10-21
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Also, as more devices are put into a chip, more complex designs are required

Method used

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  • Integrated circuit including through-substrate conductive structure and method of manufacturing the same
  • Integrated circuit including through-substrate conductive structure and method of manufacturing the same
  • Integrated circuit including through-substrate conductive structure and method of manufacturing the same

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Embodiment Construction

[0019] Higher device densities have been achieved using 3D IC technology and, in some applications, wafers with up to 6 layers have been bonded. As a result, the total wiring length is greatly reduced. Therefore, 3D IC technology has the potential as a next-generation mainstream technology.

[0020] Traditional methods for forming 3D ICs also include die-wafer bonding. Individual dies are bonded to a common wafer. An advantageous feature of die-wafer bonding is that the size of the die can be smaller than the size of the chips on the wafer.

[0021] Recently, through-silicon vias (TSVs), also known as through-wafer vias, have been increasingly used as a way to implement 3D ICs. Typically, the bottom wafer is bonded to the top wafer. Both wafers include integrated circuits on top of a substrate. The integrated circuits in the bottom wafer are connected to the integrated circuits in the wafer by interconnect structures. The integrated circuits in the wafer are also connect...

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PUM

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Abstract

A method of forming an integrated circuit includes forming at least one opening through a first surface of a substrate. The method further includes forming at least one conductive structure in the at least one opening. The method further includes removing a portion of the substrate to form a processed substrate having the first surface and a second surface opposite the first surface and to expose a portion of the at least one conductive structure adjacent to the second surface. The at least one conductive structure continuously extending from the first surface through the processed substrate to the second surface of the processed substrate, at least one sidewall of the at least one conductive structure spaced from a sidewall of the at least one opening by an air gap.

Description

technical field [0001] The present invention relates generally to the field of semiconductors, and more particularly, to integrated circuits including through-substrate conductive structures and methods of fabrication thereof. Background technique [0002] Since the invention of the integrated circuit, the semiconductor industry has experienced continuous rapid development due to continuous improvements in the integration density of various electronic components (ie, transistors, diodes, resistors, capacitors, etc.). To a large extent, this improvement in integration density stems from iterative reductions in minimum feature size, allowing more features to be integrated in a given area. [0003] This integration improvement is mainly two-dimensional (2D) in nature, where the volume occupied by the integrated components is mainly on the surface of the semiconductor wafer. Although astonishing improvements in lithography have led to dramatic improvements in 2D integrated circ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/48H01L21/768
CPCH01L21/76898H01L21/2855H01L21/28556H01L21/7682H01L21/76831H01L21/7684H01L21/76879H01L23/481H01L25/0657H01L25/50H01L2224/0401H01L2224/05009H01L2225/06541H01L2924/1305H01L2924/13091H01L2924/00
Inventor 刘源鸿杨固峰郭佩菁钟明慈陈新瑜吴仓聚邱文智
Owner TAIWAN SEMICON MFG CO LTD