Bad block management method for flash memory

A technology of flash memory and management method, which is applied in the direction of memory address/allocation/relocation, etc., and can solve problems such as failure to boot normally

Active Publication Date: 2012-10-10
SAMSUNG SEMICON CHINA RES & DEV +1
View PDF5 Cites 23 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, if the data writing of the boot block fails due to various reasons after erasing the boot block, it may cause the external dev

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Bad block management method for flash memory
  • Bad block management method for flash memory
  • Bad block management method for flash memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0059] Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Exemplary embodiments of the present invention may, however, be embodied in many different forms and should not be limited to the examples set forth herein. Rather, these examples are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the same reference numerals denote the same elements throughout.

[0060] figure 1 is a flowchart illustrating a bad block management method of a flash memory according to an exemplary embodiment of the present invention.

[0061] A flash memory using a bad block management method according to an exemplary embodiment of the present invention may be a NAND flash memory. Such a flash memory may include a plurality of storage units, and the plurality of storage units may constitute a storage space of th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a bad block management method for a flash memory. The method comprises the following steps of: dividing the storage space of the flash memory into a first area comprising a plurality of blocks and a second area comprising a plurality of blocks; performing bad block detection on the flash memory to acquire information about bad blocks; establishing a mapping relation between the bad blocks in the first area and normal blocks in the second area according to the acquired information about the bad blocks, and generating a block mapping quick access table comprising the information about the established mapping relation; and respectively storing the generated block mapping quick access table into a plurality of bad block management information blocks in the second area, wherein a plurality of bad block management information blocks are any normal blocks which are positioned in the second area and do not have the mapping relation with the bad blocks in the first area.

Description

technical field [0001] The invention relates to a bad block management method of a flash memory. Background technique [0002] Flash memory or flash memory is a non-volatile storage device that is widely used today. Flash memory includes NAND type flash memory and NOR type flash memory. The NAND flash memory includes a storage space composed of a plurality of storage units, and each storage unit stores a bit. Such storage space can be divided into multiple blocks (blocks), and each block can be divided into multiple pages (pages), and each page can include a certain number of storage units to store multiple bits. NAND-type flash memories generally perform storage (write) operations in units of pages, and erase operations in units of blocks. For example, in order to erase data recorded in one page or pages in one block, it is necessary to erase the entire block. [0003] One or more blocks in flash memory may be bad. Bad blocks can be divided into inherent bad blocks and...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G06F12/02
Inventor 唐红飞
Owner SAMSUNG SEMICON CHINA RES & DEV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap