A low-dimensional sensing storage computing integrated device and its preparation method

Abstract

The present invention discloses a low-dimensional sensing, storage and computing integrated device and a preparation method thereof. The low-dimensional sensing, storage and computing integrated device comprises: a substrate, which is a highly doped silicon wafer with an oxide layer; a storage function layer, which is metal nanocrystal particles, formed on the substrate; a transition layer, formed on the storage function layer; a gas detection layer, which is a two-dimensional semiconductor layer modified by metal nanocrystal particles to improve the detection sensitivity of nitrogen dioxide gas, formed on the transition layer; a source electrode and a drain electrode, formed on both sides of the gas detection layer, to achieve detection, identification and recording of nitrogen dioxide gas in the same device unit.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a low-dimensional sensing-storage-computing integrated device and a preparation method thereof. Background Art

[0002] With the development of Moore's Law, silicon-based integrated circuits are gradually approaching the limit of nanometer size. With the reduction of transistor device size, problems such as short channel effect and thin film leakage are becoming increasingly obvious, hindering the pace of device size reduction. As a low-dimensional integrated circuit material, two-dimensional semiconductor materials such as graphene and molybdenum sulfide are sub-nanometer-sized functional films that can work with only a single atomic layer thickness. They have the characteristics of high mobility, low operating voltage, high switching ratio, and excellent miniaturization capabilities, and are expected to become a substitute for the next generation of semiconductor material systems.

[0003] As a sensing, storage and computing integrated system, the human body can collect important information in the face of real-time changing environments and respond quickly and promptly. The high efficiency and low power consumption of the human body in processing information provide new ideas for the development of bionic electronic neuromorphic computing systems. By integrating the functions of information perception, data calculation and data storage in electronic devices, the information processing efficiency of electronic devices can be greatly improved and energy consumption can be saved, which has the potential to be applied to sensing, storage and computing integrated processing systems.

[0004] Nitrogen dioxide is a toxic and irritating gas that is easily mixed with other gases and difficult to distinguish and detect. It needs to be focused on prevention and control in the laboratory to protect the experimental population. Existing gas sensors are mostly based on oxide materials. Not only are the device sizes large, but the detection sensitivity and efficiency of gas component differentiation still need to be improved. Summary of the invention

[0005] To solve the above problems, the present invention discloses a low-dimensional sensing, storage and computing integrated device, comprising: a substrate, which is a highly doped silicon wafer with an oxide layer; a storage functional layer, which is metal nanocrystal particles, formed on the substrate; a transition layer, formed on the storage functional layer; a gas detection layer, which is a two-dimensional semiconductor layer modified with metal nanocrystal particles to improve the detection sensitivity to nitrogen dioxide gas, formed on the transition layer; a source electrode and a drain electrode, formed on both sides of the gas detection layer, to realize the detection, identification and recording of nitrogen dioxide gas in the same device unit.

[0006] In the low-dimensional sensing, storage and computing integrated device of the present invention, preferably, the metal nanocrystal particles are Pt, Au, Al, Ag, and Pd.

[0007] In the low-dimensional sensing, storage and computing integrated device of the present invention, preferably, the two-dimensional semiconductor layer is MoS2, ReS2, HfS2, or WS2.

[0008] In the low-dimensional sensing, storage and computing integrated device of the present invention, preferably, the transition layer is HfO2, ZrO2, ZnO, or TiO2.

[0009] In the low-dimensional sensing, storage and computing integrated device of the present invention, preferably, the thickness of the two-dimensional semiconductor layer is 1 nm to 10 nm, and the thickness of the metal nanocrystal particles is 1 nm to 5 nm.

[0010] The present invention also discloses a method for preparing a low-dimensional integrated sensing, storage and computing device, comprising the following steps: preparing a highly doped silicon wafer with an oxide layer as a substrate; forming metal nanocrystal particles on the substrate as a storage functional layer; forming a transition layer on the storage functional layer; forming a two-dimensional semiconductor layer on the transition layer, and then forming metal nanocrystal particles on the two-dimensional semiconductor layer to modify the two-dimensional semiconductor layer to improve the detection sensitivity to nitrogen dioxide gas; forming a source electrode and a drain electrode on both sides of the two-dimensional semiconductor layer modified by the metal nanocrystal particles, so as to realize the detection, identification and recording of nitrogen dioxide gas in the same device unit.

[0011] In the method for preparing a low-dimensional sensing, storage and computing integrated device of the present invention, preferably, the metal nanocrystal particles are Pt, Au, Al, Ag, and Pd.

[0012] In the method for preparing a low-dimensional sensing, storage and computing integrated device of the present invention, preferably, the two-dimensional semiconductor layer is MoS2, ReS2, HfS2, or WS2.

[0013] In the method for preparing a low-dimensional sensing, storage and computing integrated device of the present invention, preferably, the transition layer is HfO2, ZrO2, ZnO, or TiO2.

[0014] In the preparation method of the low-dimensional sensing, storage and computing integrated device of the present invention, preferably, the specific steps of forming metal nanocrystalline particles are: using physical vapor deposition to grow a metal with a thickness of 1nm to 5nm, and then using rapid thermal annealing equipment to anneal at a temperature of 400℃ to 550℃ for 10s to 50s in a nitrogen atmosphere to form metal nanocrystalline particles.

[0015] Beneficial effects:

[0016] (1) Breaking the limitation of silicon-based semiconductor size reduction and introducing planar two-dimensional semiconductor materials have enabled devices to approach physical limits and shrink to the atomic level, which is of great significance to the development of integrated circuits.

[0017] (2) By building an integrated sensing, storage and computing system in a bionic way, the three functions are integrated on the hardware side, and gas detection, identification and recording are completed in the same device unit at the same time, avoiding the frequent transmission of information, and opening up a direction for the development of high-efficiency gas detection systems.

[0018] (3) Metal nanocrystals are used to modify two-dimensional semiconductor materials to improve the gas detection sensitivity, and metal nanocrystals are used as storage functional layers to ensure the storage and computing functions of the device. This solution is simple and effective, saves costs, avoids complex system hardware, and has obvious potential for miniaturization. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 It is a flow chart of the method for preparing a low-dimensional sensing, storage and computing integrated device.

[0020] Figure 2 to Figure 6 It is a structural schematic diagram of each stage of the low-dimensional sensing, storage and computing integrated device preparation method.

[0021] Figure 7 It is a schematic diagram of the operating principle of a low-dimensional sensing, storage and computing integrated device. DETAILED DESCRIPTION

[0022] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention. The described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0023] In the description of the present invention, it should be noted that the terms "upper", "lower", "vertical", "horizontal", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0024] In addition, many specific details of the present invention are described below, such as the structure, materials, dimensions, processing technology and techniques of the device, so that the present invention can be more clearly understood. However, as can be understood by those skilled in the art, the present invention can be implemented without following these specific details. Unless otherwise specified below, the various parts of the device can be made of materials known to those skilled in the art, or can be made of materials with similar functions developed in the future.

[0025] Figure 1 The figure is a flow chart of the method for preparing a low-dimensional sensing, storage and computing integrated device. Figure 1As shown, the method for preparing a low-dimensional sensing, storage and computing integrated device includes the following steps:

[0026] Step S1, prepare a silicon wafer 100 with a silicon oxide layer 101 as a substrate for preparing a low-dimensional sensing, storage and computing integrated device. The thickness of the silicon oxide layer is preferably 300nm, and the range can be 100nm to 300nm. The substrate can also be a highly doped silicon wafer with an oxide layer.

[0027] Step S2, using physical vapor deposition to grow Pd with a thickness of 1nm to 5nm on the substrate, and then using rapid thermal annealing equipment to anneal at 400℃ to 550℃ for 10s to 50s in a nitrogen atmosphere to obtain Pd metal nanocrystalline particles 102 as a storage function layer, such as Figure 2 The metal nanocrystal material can also be Pt, Au, Al, Ag, etc.

[0028] Step S3, using an atomic layer deposition device to grow a HfO2 film with a thickness of 5nm to 15nm as a transition layer 103, such as Figure 3 As shown in FIG. 4 , the transition layer material can also be ZrO2, ZnO, TiO2, etc.

[0029] Step S4, using a mechanical stripping method to prepare a 4 nm thick MoS2 two-dimensional semiconductor layer as the channel layer 104 on the transition layer 103, such as Figure 4 As shown. The material of the two-dimensional semiconductor layer can also be ReS2, HfS2, WS2, etc.; the thickness range can be 1nm to 10nm.

[0030] Step S5, using photolithography and physical vapor deposition to grow Pd with a thickness of 1nm to 5nm on the surface of the two-dimensional semiconductor layer 104, and then using a rapid thermal annealing device to anneal at a temperature of 400°C to 550°C for 10s to 50s in a nitrogen atmosphere to obtain Pd metal nanocrystalline particles 105, and modifying the two-dimensional semiconductor layer 104, such as Figure 5 As shown. Using a two-dimensional semiconductor layer modified with metal nanocrystal particles as a gas detection layer can effectively improve the response sensitivity and detection efficiency of gas detection. The metal nanocrystal material can also be Pt, Au, Al, Ag, etc.

[0031] Step S6, using photolithography and electron beam evaporation to prepare 30nm-100nm thick Au as source electrode 106 and drain electrode 107 on both sides of the two-dimensional semiconductor layer modified by metal nanocrystal particles, i.e., the channel, to complete the preparation of the integrated sensing, storage and computing device. Figure 6 As shown. The source and drain electrodes may also be made of metal materials such as Ni, Al, Pt, Pd, etc. Preferably, the source and drain electrodes are designed in the shape of interdigitated electrodes.

[0032] like Figure 6As shown, the low-dimensional sensing, storage and computing integrated device includes: a substrate, which is a silicon wafer 100 with a silicon oxide layer 101; a storage function layer 102, which is metal nanocrystal particles, formed on the substrate; a transition layer 103, formed on the storage function layer 102; a gas detection layer, which is a two-dimensional semiconductor layer 104 modified by metal nanocrystal particles 105 to improve the sensitivity of nitrogen dioxide detection, formed on the transition layer 103; a source electrode 106 and a drain electrode 107, formed on both sides of the gas detection layer, to realize the detection, identification and recording of nitrogen dioxide gas in the same device unit.

[0033] Specifically, if Figure 7 As shown, when nitrogen dioxide gas is released, the conductivity state of the device will respond sensitively, completing the gas sensing function. By recording the response degree of the device, the storage function of the device can be realized. By performing neural network analysis on the response degree of the device, the type of gas can be identified, completing the calculation function of the device.

[0034] The above description is only a specific implementation mode of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily conceived by a technician familiar with the technical field within the technical scope disclosed by the present invention should be covered within the protection scope of the present invention.

Claims

1. A low-dimensional sensing, storage and computing integrated device, characterized in that: include: A substrate, which is a highly doped silicon wafer with an oxide layer; A storage function layer, which is metal nanocrystal particles, is formed on the substrate; A transition layer formed on the storage function layer; A gas detection layer, which is a two-dimensional semiconductor layer modified with metal nanocrystal particles to improve the detection sensitivity to nitrogen dioxide gas, is formed on the transition layer; The source electrode and the drain electrode are in the shape of interdigitated electrodes and are formed on both sides of the gas detection layer. When nitrogen dioxide gas is released, the conductivity state of the device will respond sensitively, completing the gas sensing function; the response degree of the device is recorded to realize the storage function of the device; the type of gas is identified by performing neural network analysis on the response degree of the device, completing the calculation function of the device. Wherein, the two-dimensional semiconductor layer is MoS2, ReS2, HfS2, WS2.

2. The low-dimensional sensing, storage and computing integrated device according to claim 1, characterized in that: The metal nanocrystalline particles of the storage function layer are Pt, Au, Al, Ag, and Pd.

3. The low-dimensional sensing, storage and computing integrated device according to claim 1, characterized in that: The transition layer is HfO2, ZrO2, ZnO, and TiO2.

4. The low-dimensional sensing, storage and computing integrated device according to claim 1, characterized in that: The thickness of the two-dimensional semiconductor layer is 1 nm to 10 nm, and the thickness of the metal nanocrystalline particles of the storage function layer is 1 nm to 5 nm.

5. A method for preparing a low-dimensional sensing, storage and computing integrated device, characterized in that: The following steps are involved: preparing a highly doped silicon wafer with an oxide layer as a substrate; forming metal nanocrystal particles on the substrate as a storage function layer; forming a transition layer on the storage functional layer; forming a two-dimensional semiconductor layer on the transition layer, and then forming metal nanocrystal particles on the two-dimensional semiconductor layer to modify the two-dimensional semiconductor layer, so as to improve the detection sensitivity of nitrogen dioxide gas; A source electrode and a drain electrode in the shape of interdigitated electrodes are formed on both sides of the two-dimensional semiconductor layer modified by metal nanocrystal particles. When nitrogen dioxide gas is released, the conductivity state of the device will respond sensitively, completing the gas sensing function; the response degree of the device is recorded to realize the storage function of the device; the type of gas is identified by performing neural network analysis on the response degree of the device, completing the calculation function of the device. Wherein, the two-dimensional semiconductor layer is MoS2, ReS2, HfS2, WS2.

6. The method for preparing a low-dimensional sensing-storage-computing integrated device according to claim 5, characterized in that: The metal nanocrystalline particles of the storage function layer are Pt, Au, Al, Ag, and Pd.

7. The method for preparing a low-dimensional sensing-storage-computing integrated device according to claim 5, characterized in that: The transition layer is HfO2, ZrO2, ZnO, and TiO2.

8. The method for preparing a low-dimensional sensing-storage-computing integrated device according to claim 5, characterized in that: The specific steps of forming the metal nanocrystalline particles of the storage functional layer are: Physical vapor deposition is used to grow a metal with a thickness of 1nm to 5nm, and then a rapid thermal annealing device is used to anneal at a temperature of 400°C to 550°C for 10s to 50s in a nitrogen atmosphere to form metal nanocrystalline particles.

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