High-definition mask and method for manufacturing the same

Abstract

The embodiment of the present application provides a high-precision mask plate and a method for manufacturing the same. The mask plate includes: a main frame and a film layer group including a pixel opening pattern, the film layer group is manufactured based on a silicon-based or glass-based substrate and a dry etching process; the film layer group is fixed to one side of the main frame. The high-precision mask plate of the present application does not require a stretching process, thus avoiding the problem of film layer evaporation deviation caused by the low positioning accuracy of the stretching, and the film layer group in the present application is manufactured based on a silicon-based or glass-based substrate and a dry etching process, so the high-precision mask plate of the embodiment of the present application has a higher pixel density and pixel position accuracy.

Description

Technical Field

[0001] The present application relates to the field of evaporation technology, and in particular to a high-precision mask plate and a method for manufacturing the same. Background Art

[0002] In the process of manufacturing OLED (Organic Light-Emitting Diode) devices, a high-precision metal mask is usually used to make sub-pixel light-emitting layers of three primary colors such as R (Red), G (Green), and B (Blue).

[0003] The existing high-definition metal mask manufacturing process includes: making a pattern on a mask strip by wet etching, and accurately aligning, stretching, and welding the mask strip with the pattern to a frame to obtain a high-definition metal mask.

[0004] However, it is difficult to make the mask strip have a high pixel opening density based on the wet process, which makes it difficult to manufacture display panels with a high pixel density (i.e., a high display resolution), for example, it is difficult to manufacture display panels with a display resolution of more than 600 PPI (Pixels Per Inch). In addition, the pixel positional accuracy (PPA) of the stretching process is low, for example, it can usually only achieve a position accuracy of 3 to 5 μm (micrometers), resulting in the existing high-precision metal mask plates cannot be used to manufacture higher high-pixel density display panels. Summary of the invention

[0005] In view of the shortcomings of the existing methods, the present application proposes a high-definition mask plate and a manufacturing method thereof, so as to solve the technical problem that the existing high-definition metal mask plates in the prior art cannot be used to manufacture higher high pixel density display panels.

[0006] In a first aspect, an embodiment of the present application provides a high-definition mask, comprising: a main frame and a film layer group including a pixel opening pattern, wherein the film layer group is manufactured based on a silicon-based or glass-based substrate and a dry etching process;

[0007] The membrane layer group is fixed on one side of the main frame.

[0008] Optionally, the high-definition mask plate further includes a transfer frame;

[0009] The film layer group is arranged on a side of the adapter frame away from the main frame;

[0010] The film layer group is fixed on one side of the transfer frame at the working temperature during the evaporation of the high-precision mask plate.

[0011] Optionally, the film layer group includes: a stacked organic layer, a magnetic metal layer and a stress control layer, and the organic layer is closer to the main frame than the stress control layer;

[0012] At least one alignment mark is respectively disposed in the organic layer, the magnetic metal layer and the stress control layer.

[0013] Optionally, at least one adapter frame is provided on one side of one of the main frames.

[0014] In a second aspect, an embodiment of the present application provides a method for manufacturing the high-definition mask plate of the first aspect, comprising:

[0015] Fabricating an initial film layer set on one side of a silicon-based or glass-based substrate;

[0016] Based on the photolithography process and the dry etching process, the initial film layer group is patterned to obtain the film layer group including the pixel opening pattern;

[0017] The side of the film layer group away from the substrate is fixed on one side of the main frame.

[0018] Optionally, before fixing the side of the film layer group away from the substrate to one side of the main frame, the method further includes:

[0019] Aligning the adapter frame with the alignment marks on the film layer group;

[0020] At the working temperature of the high-definition mask plate during evaporation, the aligned transfer frame is bonded to a side of the film layer group away from the substrate;

[0021] The bonded film layer group is separated from the substrate.

[0022] Optionally, the film layer group includes a stacked organic layer, a magnetic metal layer and a stress control layer, the organic layer is closer to the substrate than the stress control layer, and the material of the organic layer includes polyimide;

[0023] And, separating the bonded film layer group from the substrate includes: separating the organic layer from the substrate based on a laser separation process or a mechanical peeling process.

[0024] Optionally, before manufacturing the initial film layer group on one side of the silicon-based or glass-based substrate, the method further includes:

[0025] manufacturing a separation layer on one side of the substrate;

[0026] And, manufacturing an initial film layer set on one side of a silicon-based or glass-based substrate, comprising:

[0027] On a side of the separation layer away from the substrate, sequentially manufacturing an initial organic layer, an initial magnetic metal layer, an initial stress control layer and an initial mask layer;

[0028] And, separating the bonded film layer group from the substrate comprises: separating the separation layer from the substrate based on a mechanical peeling process.

[0029] Optionally, manufacturing an initial film layer group on one side of the silicon-based or glass-based substrate includes: sequentially manufacturing an initial organic layer, an initial magnetic metal layer, an initial stress control layer and an initial mask layer on one side of the substrate.

[0030] Optionally, the initial film layer group is patterned based on a photolithography process and a dry etching process to obtain the film layer group including a pixel opening pattern, including:

[0031] Performing patterning on the initial mask layer to obtain a patterned layer;

[0032] Using the patterned layer as a mask, patterning the initial organic layer, the initial magnetic metal layer, and the initial stress control layer in sequence, to obtain the stress control layer, the magnetic metal layer, and the organic layer having a pixel opening pattern in sequence;

[0033] The patterned layer is removed.

[0034] The beneficial technical effects brought about by the technical solution provided by the embodiment of the present application include:

[0035] In the present application, the film layer group of the high-precision mask plate is manufactured based on a silicon-based or glass-based substrate and a semiconductor manufacturing process, and then the film layer group containing the pixel opening pattern is directly fixed on one side of the main frame to obtain the high-precision mask plate of the present application, without the need for a stretching process, which can avoid the problem of sub-pixel light-emitting film layer evaporation offset caused by the low pixel opening position accuracy caused by the stretching process, and can eliminate the mutual constraints and influences between the position accuracy of the pixel opening in the mask strip caused by the stretching process and the overall flatness and wrinkles of the mask strip. Moreover, the silicon-based or glass-based substrate involved in the present application supports a higher pixel opening density (i.e., a higher patterning accuracy), and the dry etching process has a higher etching accuracy than the wet etching process, so the high-precision mask plate of the present application has a higher pixel opening density and position accuracy. Based on the high-precision mask plate of the present application, a display panel with a higher pixel density (i.e., a higher display resolution) and (sub) pixel position accuracy can be manufactured.

[0036] Additional aspects and advantages of the present application will be partially given in the following description, which will become apparent from the following description, or will be understood through the practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] The above and / or additional aspects and advantages of the present application will become apparent and easily understood from the following description of the embodiments in conjunction with the accompanying drawings, in which:

[0038] Figure 1 A schematic diagram of the structure of a high-definition mask provided in an embodiment of the present application;

[0039] Figure 2 A schematic diagram of the structure of another high-definition mask provided in an embodiment of the present application;

[0040] Figure 3 A top view of a high-definition mask provided in an embodiment of the present application;

[0041] Figure 4 A schematic diagram of a process for manufacturing a high-definition mask plate provided in an embodiment of the present application;

[0042] Figure 5 A method for manufacturing a high-definition mask provided in an embodiment of the present application includes a flow chart of an adapter frame;

[0043] Figure 6 A schematic flow chart of a patterning process in a method for manufacturing a high-definition mask provided in an embodiment of the present application;

[0044] Figure 7 This is a schematic diagram of an embodiment of the present application after an initial film layer group is set on one side of a substrate;

[0045] Figure 8 This is a schematic diagram of the initial mask layer after patterning in an embodiment of the present application;

[0046] Fig. 9 This is a schematic diagram of the initial stress control layer after patterning according to an embodiment of the present application;

[0047] Fig.10 This is a schematic diagram of the initial magnetic metal layer and the initial organic layer after patterning according to an embodiment of the present application;

[0048] Fig.11 This is a schematic diagram of an embodiment of the present application after the patterned layer is removed;

[0049] Fig.12 This is a schematic diagram of an embodiment of the present application after the adapter frame is bonded to the side of the film layer group away from the substrate;

[0050] Fig.13 This is a schematic diagram of an embodiment of the present application after the film layer group is separated from the substrate and turned over;

[0051] Fig.14 This is a schematic diagram of an embodiment of the present application in which the adapter frame is fixed to the main frame;

[0052] Fig.15 A top view of a substrate according to an embodiment of the present application;

[0053] Fig.16 A top view of an embodiment of the present application after an initial film layer group is set on one side of a substrate;

[0054] Fig.17 A top view of the initial film layer group after patterning in the embodiment of the present application;

[0055] Fig.18 This is a top view of the adapter frame after being bonded to the side of the film layer group away from the substrate according to the embodiment of the present application;

[0056] Fig.19 This is a top view of the embodiment of the present application after the film layer group is separated from the substrate and turned over;

[0057] Fig. 20 This is a top view of the adapter frame after being fixed to the main frame in the embodiment of the present application;

[0058] In the figure:

[0059] 100 - initial film layer group; 110 - initial organic layer; 120 - initial magnetic metal layer; 130 - initial stress control layer; 140 - initial mask layer;

[0060] 101 - film layer group; 111 - organic layer; 121 - magnetic metal layer; 131 - stress control layer; 141 - patterned layer;

[0061] 200-base plate; 300-adapter frame; 400-main frame. DETAILED DESCRIPTION

[0062] The embodiments of the present application are described below in conjunction with the drawings in the present application. It should be understood that the implementation methods described below in conjunction with the drawings are exemplary descriptions for explaining the technical solutions of the embodiments of the present application and do not constitute a limitation on the technical solutions of the embodiments of the present application.

[0063] Those skilled in the art will appreciate that, unless expressly stated otherwise, the singular forms "a", "an", "said" and "the" used herein may also include plural forms. It should be further understood that the term "comprising" used in the specification of the present application refers to the presence of the features, integers, steps, operations, elements and / or components, but does not exclude the implementation of other features, information, data, steps, operations, elements, components and / or combinations thereof supported by the technical field. The term "and / or" used herein refers to at least one of the items defined by the term, for example, "A and / or B" may be implemented as "A", or as "B", or as "A and B".

[0064] In order to make the objectives, technical solutions and advantages of the present application clearer, the implementation methods of the present application will be further described in detail below with reference to the accompanying drawings.

[0065] First, the related technologies involved in this application are described:

[0066] The inventor of the present application has found through research that in the process of manufacturing OLED (Organic Light-Emitting Diode) devices, a high-precision metal mask is usually used to manufacture sub-pixel light-emitting layers of three primary colors such as R (Red), G (Green), and B (Blue). The existing high-precision metal mask manufacturing process includes: making a pattern on a mask strip by wet etching, and accurately aligning, stretching, and welding the mask strip with the pattern to a frame to obtain a high-precision metal mask. However, it is difficult to make the mask strip have a high pixel opening density based on the wet process, which makes it difficult to manufacture a display panel with a high pixel density (i.e., a high display resolution), for example, it is difficult to manufacture a display panel with a resolution of more than 600 PPI (Pixels Per Inch); and the pixel positional accuracy (Pixel Positional Accuracy, PPA) of the stretching process is low, for example, it can usually only reach a positional accuracy of 3 to 5 μm (micrometers), resulting in the existing high-precision metal mask being unable to be used to manufacture a higher high-pixel density display panel.

[0067] The following is a detailed description of the technical solution of the present application and how the technical solution of the present application solves the above technical problems with specific embodiments. It should be noted that the following implementations can refer to, draw on or combine with each other, and the same terms, similar features and similar implementation steps in different implementations will not be described repeatedly.

[0068] The present application embodiment provides a high-definition mask plate, the structural schematic diagram of which is as follows Figure 1 As shown, it includes: a main frame 400 and a film layer group 101 including a pixel opening pattern. The film layer group 101 is manufactured based on a silicon-based or glass-based substrate 200 and a dry etching process.

[0069] The membrane layer group 101 is fixed on one side of the main frame 400 .

[0070] In the present application, the film layer group of the high-precision mask plate is manufactured based on a silicon-based or glass-based substrate and a semiconductor manufacturing process, and then the film layer group 101 containing the pixel opening pattern is directly fixed on one side of the main frame 400 to obtain the high-precision mask plate of the present application, without the need for a stretching process, which can avoid the problem of sub-pixel light-emitting film layer evaporation offset caused by the low pixel opening position accuracy caused by the stretching process, and can eliminate the mutual constraints and influences between the position accuracy of the pixel opening in the mask strip caused by the stretching process and the overall flatness and wrinkles of the mask strip. Moreover, the silicon-based or glass-based substrate 200 involved in the present application supports a higher pixel opening density (i.e., a higher patterning accuracy), and the dry etching process has a higher etching accuracy than the wet etching process, so the high-precision mask plate of the present application has a higher pixel opening density and position accuracy, and the high-precision mask plate based on the present application can manufacture a display panel with a higher pixel density (i.e., a higher display resolution) and (sub) pixel position accuracy.

[0071] Optionally, in one embodiment of the present application, see Figure 2 As shown, the high-definition mask plate further includes: an adapter frame 300 .

[0072] The film layer group 101 is disposed on a side of the adapter frame 300 away from the main frame 400 .

[0073] The film layer group 101 is fixed on one side of the transfer frame 300 at the working temperature during the evaporation of the high-definition mask.

[0074] Optionally, in an embodiment of the present application, the film layer group 101 is fixed to one side of the adapter frame 300 at the working temperature during the high-definition mask plate evaporation. At room temperature, due to the influence of thermal expansion and contraction, the overall structure composed of the film layer group 101 and the adapter frame 300 is in a locked state, similar to the tension of a stretched net, thereby keeping the film layer group 101 flat and wrinkle-free; when evaporation is performed, due to the increase in temperature, the pixel position of the film layer group 101 can be accurately returned to the position during evaporation, achieving the effect of precise alignment.

[0075] Optionally, in one embodiment of the present application, see Figure 1-2 As shown, the film layer group 101 includes: a stacked organic layer 111 , a magnetic metal layer 121 and a stress control layer 131 , and the organic layer 111 is closer to the main frame 400 than the stress control layer 131 .

[0076] At least one alignment mark is disposed in each of the organic layer 111 , the magnetic metal layer 121 and the stress control layer 131 .

[0077] Optionally, in the embodiments of the present application, see Figure 1-2As shown, the organic layer 111 is arranged on one side of the main frame 400, the magnetic metal layer 121 is arranged on the side of the organic layer 111 away from the main frame 400, and the stress control layer 131 is arranged on the side of the magnetic metal layer 121 away from the organic layer 111. The thickness of the organic layer 111 includes: 5 to 20 μm, and the material of the organic layer 111 can be polyimide or the like. The functions of the organic layer 111 include: serving as a substrate for the magnetic metal layer 121 and the stress control layer 131, and controlling the opening size. The thickness of the magnetic metal layer 121 includes: 1 to 5 μm, and the material of the magnetic metal layer 121 includes: Ni, Fe / Ni alloy, Ni / Co alloy, etc. The functions of the magnetic metal layer 121 include: cooperating with other magnetic fields or magnetic components for magnetic adsorption during evaporation. The thickness of the stress control layer 131 includes: 0.5 to 2 μm, and the material of the stress control layer 131 includes: SiO X , SiNx and other inorganic materials, the functions of the stress control layer 131 include: stress adjustment.

[0078] Optionally, in one embodiment of the present application, see Figure 3 As shown, at least one adapter frame 300 is disposed on one side of a main frame 400 .

[0079] Optionally, in one embodiment of the present application, see Figure 3 As shown, four adapter frames 300 are arranged on one side of a main frame 400, and the four adapter frames 300 are arranged on the same main frame 400 in different areas. At least one alignment mark is respectively arranged on the four adapter frames 300 and the main frame 400, and the adapter frames 300 are aligned with the alignment marks on the main frame 400. It should be noted that the number of adapter frames 300 arranged on one side of a main frame 400 can also be other numbers, and the present application does not limit the number of adapter frames 300 arranged on one side of a main frame 400.

[0080] Based on the same inventive concept, the present application embodiment provides a method for manufacturing the above-mentioned fine mask plate, and the flow chart of the method is as follows: Figure 4 As shown, steps S401-S403 are included:

[0081] S401 : manufacturing an initial film layer group 100 on one side of a silicon-based or glass-based substrate 200 .

[0082] S402: Based on the photolithography process and the dry etching process, the initial film layer group 100 is patterned to obtain the film layer group 101 including the pixel opening pattern.

[0083] S403 : Fixing the side of the film layer group 101 away from the substrate 200 to one side of the main frame 400 .

[0084] A method for manufacturing a high-precision mask plate provided in an embodiment of the present application selects a silicon-based or glass-based substrate 200, so that a high-precision semiconductor process can be used, so that the initial film layer group 100 can be patterned using a photolithography process and a dry etching process to obtain a film layer group 101 including a pixel opening pattern, thereby obtaining a high-precision mask plate with a higher pixel opening density.

[0085] In some possible implementations, before the side of the film layer group 101 away from the substrate 200 is fixed to the side of the main frame 400 in the above step S403, and the initial film layer group 100 is patterned based on the photolithography process and the dry etching process in the above step S402 to obtain the film layer group 101 including the pixel opening pattern, as shown in FIG. Figure 5 As shown, it also includes steps S501-S503:

[0086] S501 : Align the adapter frame 300 with the alignment mark on the film layer group 101 .

[0087] S502 : at the working temperature during the high-definition mask evaporation, the aligned transfer frame 300 is bonded to the side of the film layer group 101 away from the substrate 200 .

[0088] S503 : separating the film layer set 101 and the substrate 200 after bonding.

[0089] Optionally, in the embodiment of the present application, at the working temperature during the evaporation of the high-precision mask, the adapter frame 300 is aligned with the alignment mark on the film layer group 101, and the aligned adapter frame 200 is bonded to the side of the film layer group 101 away from the substrate 200. At room temperature, due to the influence of thermal expansion and contraction, the overall structure composed of the film layer group 101 and the adapter frame 300 is in a locked state, similar to the tension of a stretched net, thereby keeping the film layer group 101 flat and wrinkle-free; when evaporation is performed, due to the increase in temperature, the pixel position of the film layer group 101 can be accurately returned to the position during evaporation, achieving the effect of precise alignment.

[0090] Optionally, in the embodiment of the present application, the thickness of the adapter frame 300 includes: 0.5-2 μm, and the material of the adapter frame 300 includes: Invar or stainless steel. The adapter frame 300 is bonded to the side of the film layer group 101 away from the substrate 200, and the adapter bracket 300 can play a role in initially supporting the film layer group 101, and the adapter bracket 300 can transfer the film layer group 101 to the main bracket 400. The bonding method between the adapter frame 300 and the film layer group 101 includes: UV (Ultraviolet Rays: ultraviolet) glue or thermal curing glue.

[0091] Optionally, in the embodiment of the present application, if the size of the high-definition mask is small, such as the size of a G2.5 or 6-12 inch semiconductor, the adapter frame 300 can be omitted, and the main frame 400 can be directly bonded and fixed to the film layer group 101. If the size of the high-definition mask is large, the main frame 400 is heavy and inconvenient to move, and the adapter frame 300 is bonded to the film layer group 101, and then the adapter frame 300 is fixed to the main frame 400.

[0092] Optionally, in one embodiment of the present application, see Figure 1-2 As shown, the film layer group 101 includes a stacked organic layer 111 , a magnetic metal layer 121 and a stress control layer 131 . The organic layer 111 is closer to the substrate 200 than the stress control layer 131 . The material of the organic layer 111 includes polyimide.

[0093] Furthermore, separating the bonded film layer group 101 from the substrate 200 includes: separating the organic layer 111 from the substrate 200 based on a laser separation process or a mechanical peeling process.

[0094] Optionally, the material of the organic layer 200 includes polyimide, and a laser separation process is used to separate the bonded film layer group 101 from the substrate. The organic layer 200 may also be made of polyimide that does not require a laser separation process, and a mechanical peeling process may be used to separate the bonded film layer group 101 from the substrate.

[0095] Optionally, in another embodiment of the present application, in the above step S401, before manufacturing the initial film layer group 100 on one side of the silicon-based or glass-based substrate 200, it also includes:

[0096] A separation layer is produced on one side of the substrate 200 .

[0097] And, manufacturing an initial film layer group 100 on one side of a silicon-based or glass-based substrate 200, comprising:

[0098] On a side of the separation layer away from the substrate 200 , an initial organic layer 110 , an initial magnetic metal layer 120 , an initial stress control layer 130 and an initial mask layer 140 are sequentially manufactured.

[0099] And, separating the bonded film layer group 101 from the substrate 200 includes: separating the separation layer from the substrate 200 based on a mechanical peeling process.

[0100] Optionally, the material of the initial organic layer 110 includes polyimide, and the separation layer is disposed between the substrate 200 and the film layer group 101 . The separation layer is separated from the substrate 200 by a mechanical peeling process, thereby separating the film layer group 101 from the substrate 200 after bonding.

[0101] Optionally, in one embodiment of the present application, an initial film layer group 100 is manufactured on one side of a silicon-based or glass-based substrate 200, including: an initial organic layer 110, an initial magnetic metal layer 120, an initial stress control layer 130 and an initial mask layer 140 are manufactured in sequence on one side of the substrate 200.

[0102] Optionally, in the embodiments of the present application, see Figure 1-2 As shown, the thickness of the initial organic layer 110 includes: 5 to 20 μm, and the material of the initial organic layer 110 can be polyimide, etc. The functions of the initial organic layer 110 include: serving as a substrate for the initial magnetic metal layer 120 and the initial stress control layer 130, and controlling the opening size. The thickness of the initial magnetic metal layer 120 includes: 1 to 5 μm, and the material of the initial magnetic metal layer 120 includes: Ni, Fe / Ni alloy, Ni / Co alloy, etc. The functions of the initial magnetic metal layer 120 include: cooperating with other magnetic fields or magnetic components for magnetic adsorption during evaporation. The thickness of the initial stress control layer 130 includes: 0.5 to 2 μm, and the material of the initial stress control layer 130 includes: SiO X , SiNx and other inorganic materials, the initial stress control layer 130 includes: stress adjustment. The material of the initial mask layer 140 includes: organic resin or inorganic material, and the initial mask layer 140 includes: serving as a hard mask for patterning the initial organic layer 110, the initial magnetic metal layer 120, and the initial stress control layer 130.

[0103] Optionally, in some possible implementations, such as Figure 6 As shown, in the above step S402, the initial film layer group 100 is patterned based on the photolithography process and the dry etching process to obtain the film layer group 101 including the pixel opening pattern, which specifically includes the following steps S601-S603:

[0104] S601 : performing patterning on the initial mask layer 140 to obtain a patterned layer 141 .

[0105] S602: using the patterned layer 141 as a mask, patterning the initial organic layer 110, the initial magnetic metal layer 120, and the initial stress control layer 130 in sequence, and obtaining the stress control layer 131, the magnetic metal layer 121, and the organic layer 111 having pixel opening patterns in sequence.

[0106] S603: removing the patterned layer 141 .

[0107] Optionally, in the embodiment of the present application, the initial mask layer 140 is patterned based on a photolithography process and a dry etching process to obtain a patterned layer 141 having a designed pattern.

[0108] Optionally, in the embodiment of the present application, the patterned layer 141 is used as a mask to sequentially perform dry etching on the initial organic layer 110, the initial magnetic metal layer 120, and the initial stress control layer 130, and each dry etching completes all patterns in the same film layer. This manufacturing method can ensure the relative position accuracy of pixels and marks. The patterns obtained by dry etching include: pixel patterns and alignment marks, etc.

[0109] Optionally, when patterning the initial organic layer 110 , the initial magnetic metal layer 120 , and the initial stress control layer 130 , the patterned layer 141 may be used as a mask or photolithography may be performed again.

[0110] Refer to the following Figure 7-20 , a specific example of the method for manufacturing a high-precision mask provided in an embodiment of the present application is introduced in detail:

[0111] (1) An initial film layer group 100 is manufactured on one side of a silicon-based or glass-based substrate 200 .

[0112] See also Figure 7 and Figure 15-16 As shown, on one side of a silicon-based or glass-based substrate 200, an initial organic layer 110, an initial magnetic metal layer 120, an initial stress control layer 130 and an initial mask layer 140 are sequentially manufactured.

[0113] Optionally, the thickness of the initial organic layer 110 includes: 5 to 20 μm, and the material of the initial organic layer 110 can be polyimide, etc. The functions of the initial organic layer 110 include: serving as a substrate for the initial magnetic metal layer 120 and the initial stress control layer 130, and controlling the opening size. The thickness of the initial magnetic metal layer 120 includes: 1 to 5 μm, and the material of the initial magnetic metal layer 120 includes: Ni, Fe / Ni alloy, Ni / Co alloy, etc. The functions of the initial magnetic metal layer 120 include: cooperating with other magnetic fields or magnetic components for magnetic adsorption during evaporation. The thickness of the initial stress control layer 130 includes: 0.5 to 2 μm, and the material of the initial stress control layer 130 includes: SiO X , SiNx and other inorganic materials, the initial stress control layer 130 includes: stress adjustment. The material of the initial mask layer 140 includes: organic resin or inorganic material, and the initial mask layer 140 includes: serving as a hard mask for patterning the initial organic layer 110, the initial magnetic metal layer 120, and the initial stress control layer 130.

[0114] Optionally, the film order of the initial organic layer 110, the initial magnetic metal layer 120, the initial stress control layer 130 and the initial mask layer 140 can be adjusted according to actual conditions. The initial organic layer 110, the initial magnetic metal layer 120, the initial stress control layer 130 and the initial mask layer 140 can also omit one of the film layers according to actual conditions. The initial mask layer 140 can have multiple layers.

[0115] (2) Based on the photolithography process and the dry etching process, the initial film layer group 100 is patterned.

[0116] A film layer set 101 including a pixel opening pattern is obtained.

[0117] See also Figure 8-11 and Fig.17 Based on the photolithography process, the initial mask layer 140 is patterned to obtain the patterned layer 141. Using the patterned layer 141 as a mask, the initial organic layer 110, the initial magnetic metal layer 120, and the initial stress control layer 130 are patterned in sequence to obtain the organic layer 111, the magnetic metal layer 120, and the stress control layer 131. The patterned layer 141 is removed.

[0118] (3) The adapter frame 300 is bonded to the side of the film layer assembly 101 away from the substrate, and the substrate 200 is removed and turned over.

[0119] See also Figure 12-13 and Figure 18-19 As shown, at the working temperature of the high-precision mask plate, the adapter frame 300 is aligned with the film layer group 101, and the aligned adapter frame 300 is bonded to the side of the film layer group away from the substrate. In the top view, the adapter frame 300 blocks the substrate 200, and the boundary of the substrate 200 is at Fig.18 The substrate 200 is separated from the film layer group 101 by a laser separation process or a mechanical peeling process. The structure composed of the adapter frame 300 and the film layer group 101 is turned over.

[0120] (4) Fix the adapter frame 300 on one side of the main frame 400.

[0121] See also Fig.14 and Fig. 20 As shown, the alignment mark on the adapter frame 300 is aligned with the alignment mark on the main frame 400, and the adapter frame 300 is fixed to the main frame 400, and the fixing method includes: bonding or welding. At least one adapter frame 300 is fixed to one side of a main frame 400. When multiple adapter frames 300 are fixed to the same main frame 400, the multiple adapter frames 300 can be fixed in different areas.

[0122] Optionally, when the size of the high-definition mask plate to be manufactured is small, the above step (3) can be omitted, and the main frame 400 and the film layer group 101 can be directly bonded and fixed.

[0123] By applying the embodiments of the present application, at least the following beneficial effects can be achieved:

[0124] 1. In the present application, the film layer group of the high-precision mask plate is manufactured based on a silicon-based or glass-based substrate and a semiconductor manufacturing process. Then, the film layer group 101 containing the pixel opening pattern is directly fixed on one side of the main frame 400 to obtain the high-precision mask plate of the present application. No meshing process is required, which can avoid the problem of sub-pixel light-emitting film layer evaporation offset caused by the low pixel opening position accuracy caused by the meshing process, and can eliminate the mutual constraints and influences between the position accuracy of the pixel opening in the mask strip caused by the meshing process and the overall flatness and wrinkles of the mask strip. Moreover, the silicon-based or glass-based substrate 200 involved in the present application supports a higher pixel opening density (i.e., a higher patterning accuracy), and the dry etching process has a higher etching accuracy than the wet etching process. Therefore, the high-precision mask plate of the present application has a higher pixel opening density and position accuracy. Based on the high-precision mask plate of the present application, a display panel with a higher pixel density (i.e., a higher display resolution) and (sub) pixel position accuracy can be manufactured.

[0125] 2. At the working temperature of the high-precision mask plate during evaporation, align the adapter frame 300 with the alignment mark on the film layer group 101, and adhere the aligned adapter frame 200 to the side of the film layer group 101 away from the substrate 200. At room temperature, due to the influence of thermal expansion and contraction, the overall structure composed of the film layer group 101 and the adapter frame 300 is in a locked state, similar to the tension of the net, so as to keep the film layer group 101 flat and wrinkle-free; when evaporation is performed, due to the increase in temperature, the pixel position of the film layer group 101 can be accurately returned to the position during evaporation, achieving the effect of precise alignment. At the same time, it is free from the net stretching process, and there is no need to consider the influence of the thermal expansion coefficient of the film material on the position accuracy.

[0126] 3. A method for manufacturing a high-precision mask plate provided in an embodiment of the present application selects a silicon-based or glass-based substrate 200, so that a high-precision semiconductor process can be used, so that the initial film layer group 100 can be patterned using a photolithography process and a dry etching process to obtain a film layer group 101 including a pixel opening pattern, thereby obtaining a high-precision mask plate with a higher pixel opening density.

[0127] 4. By fixing a plurality of adapter frames 300 in different areas on one side of the main frame 400, a large-sized high-definition mask plate can be manufactured.

[0128] Those skilled in the art will appreciate that the various operations, methods, steps, measures, and schemes in the processes discussed in this application may be alternated, altered, combined, or deleted. Further, other steps, measures, and schemes in the various operations, methods, and processes discussed in this application may also be alternated, altered, rearranged, decomposed, combined, or deleted. Further, the steps, measures, and schemes in the prior art that are similar to those disclosed in this application may also be alternated, altered, rearranged, decomposed, combined, or deleted.

[0129] In the description of the present application, the directions or positional relationships indicated by words such as "center", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside" and "outside" are based on the exemplary directions or positional relationships shown in the accompanying drawings. They are for the convenience of describing or simplifying the description of the embodiments of the present application, and do not indicate or imply that the referred device or component must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they should not be understood as limitations on the present application.

[0130] The terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise specified, "plurality" means two or more.

[0131] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0132] In the description of this specification, specific features, structures, materials or characteristics may be combined in an appropriate manner in any one or more embodiments or examples.

[0133] It should be understood that, although the various steps in the flowchart of the accompanying drawings are displayed in sequence according to the indication of the arrows, the order of implementation of these steps is not limited to the order indicated by the arrows. Unless there is a clear description herein, in some implementation scenarios of the embodiments of the present application, the steps in each process can be performed in other orders according to demand. Moreover, some or all of the steps in each flow chart may include multiple sub-steps or multiple stages based on actual implementation scenarios. Some or all of these sub-steps or stages may be executed at the same time, or may be executed at different times in different scenarios at the execution time, and the execution order of these sub-steps or stages may be flexibly configured according to demand, and the embodiments of the present application do not limit this.

[0134] The above is only a partial implementation method of the present application. It should be pointed out that for ordinary technicians in this technical field, without departing from the technical concept of the scheme of the present application, other similar implementation methods based on the technical ideas of the present application are also within the protection scope of the embodiments of the present application.

Claims

1. A high-definition mask, characterized in that: include: A main frame and a film layer group including a pixel opening pattern, wherein the film layer group is manufactured based on a silicon-based or glass-based substrate and a dry etching process; The film layer group is fixed on one side of the main frame, and the film layer group includes: a stacked organic layer, a magnetic metal layer and a stress control layer, and the organic layer is closer to the main frame than the stress control layer; Also included is a transfer frame; The film layer group is arranged on a side of the adapter frame away from the main frame; The film layer group is fixed on one side of the transfer frame at the working temperature during the evaporation of the high-precision mask plate.

2. The high-definition mask according to claim 1, characterized in that: At least one alignment mark is respectively disposed in the organic layer, the magnetic metal layer and the stress control layer.

3. The high-definition mask according to claim 1, characterized in that: At least one adapter frame is provided on one side of one of the main frames.

4. A method for manufacturing a high-definition mask according to any one of claims 1 to 3, characterized in that: include: Fabricating an initial film layer set on one side of a silicon-based or glass-based substrate; Based on the photolithography process and the dry etching process, the initial film layer group is patterned to obtain the film layer group including the pixel opening pattern; The side of the film layer group away from the substrate is fixed on one side of the main frame.

5. The method for manufacturing a high-definition mask according to claim 4, characterized in that: Before fixing the side of the film layer group away from the substrate to one side of the main frame, the method further includes: Aligning the adapter frame with the alignment marks on the film layer group; At the working temperature of the high-definition mask plate during evaporation, the aligned transfer frame is bonded to a side of the film layer group away from the substrate; The film layer group and the substrate are separated after bonding.

6. The method for manufacturing a high-definition mask according to claim 5, characterized in that: The film layer group includes a stacked organic layer, a magnetic metal layer and a stress control layer, the organic layer is closer to the substrate than the stress control layer, and the material of the organic layer includes polyimide; And, separating the bonded film layer group from the substrate includes: separating the organic layer from the substrate based on a laser separation process or a mechanical peeling process.

7. The method for manufacturing a high-definition mask according to claim 5, characterized in that: Before manufacturing the initial film layer set on one side of the silicon-based or glass-based substrate, it also includes: manufacturing a separation layer on one side of the substrate; And, manufacturing an initial film layer set on one side of a silicon-based or glass-based substrate, comprising: On a side of the separation layer away from the substrate, sequentially manufacturing an initial organic layer, an initial magnetic metal layer, an initial stress control layer and an initial mask layer; And, separating the bonded film layer group from the substrate comprises: separating the separation layer from the substrate based on a mechanical peeling process.

8. The method for manufacturing a high-definition mask according to claim 4, characterized in that: Manufacturing an initial film layer group on one side of the silicon-based or glass-based substrate includes: manufacturing an initial organic layer, an initial magnetic metal layer, an initial stress control layer and an initial mask layer in sequence on one side of the substrate.

9. The method for manufacturing a high-definition mask according to claim 7 or 8, characterized in that: Based on the photolithography process and the dry etching process, the initial film layer group is patterned to obtain the film layer group including the pixel opening pattern, including: Performing patterning on the initial mask layer to obtain a patterned layer; Using the patterned layer as a mask, patterning the initial organic layer, the initial magnetic metal layer, and the initial stress control layer in sequence, to obtain the stress control layer, the magnetic metal layer, and the organic layer having a pixel opening pattern in sequence; The patterned layer is removed.

Images