Impurity removal device of vaporizer and polycrystalline silicon preparation system

Abstract

The invention provides a vaporizer impurity removal device and a polycrystalline silicon preparation system, relates to the technical field of polycrystalline silicon preparation, and aims to solve the problem of poor impurity removal effect in related technologies. The vaporizer impurity removal device comprises a vaporizer shell, the vaporizer shell is provided with a vaporizer kettle, a plurality of impurity removal openings are formed in the bottom of the vaporizer shell, the multiple impurity removal openings communicate with the vaporizer kettle and the outside, and the multiple impurity removal openings are used for discharging high-boiling residues in the vaporizer kettle in the gasification process; a one-way valve is arranged at each impurity discharge port and is used for controlling the opening or closing of the impurity discharge port. According to the device, continuous impurity removal can be achieved, the impurity removal effect is improved, it can be guaranteed that high-boiling residues and impurities are effectively discharged in time in the vaporization process, then the purity of the raw material trichlorosilane in the vaporizer is guaranteed, the vaporization efficiency is improved, and the preparation purity and product quality of polycrystalline silicon are guaranteed to the maximum extent.

Description

Technical Field

[0001] The present application relates to the technical field of polysilicon preparation, and in particular to a vaporizer impurity removal device and a polysilicon preparation system. Background Art

[0002] The modified Siemens method for producing polysilicon includes: utilizing hydrogen chloride and industrial silicon powder to react at a certain temperature to generate trichlorosilane; utilizing a cold hydrogenation reactor to react silicon powder with silicon tetrachloride, hydrogen chloride and hydrogen recovered from reduction tail gas to generate trichlorosilane; then distilling and purifying the trichlorosilane; introducing the purified trichlorosilane and hydrogen into a polysilicon reduction furnace in a certain mixing ratio; reducing the trichlorosilane to elemental silicon by hydrogen and depositing it on the surface of the silicon core, thereby gradually generating polysilicon of required specifications.

[0003] Among them, the trichlorosilane vaporizer plays a vital role in the production process of polysilicon as a reduction device for the raw material trichlorosilane. As the use time increases, the shell of the trichlorosilane vaporizer will continue to accumulate high-boiling impurities, affecting the vaporization effect. In the related art, a high-boiling point discharge port is set on the trichlorosilane vaporizer.

[0004] However, the impurity removal effect in the related technology is poor, the vaporization effect of the trichlorosilane vaporizer is poor, the purity of trichlorosilane cannot be well guaranteed, and the purity and product quality of polysilicon are low. Summary of the invention

[0005] The embodiments of the present application provide a vaporizer impurity removal device and a polysilicon preparation system, which can achieve continuous impurity removal and improve the impurity removal effect, help to ensure the timely and effective discharge of high-boiling substances and impurities during the vaporization process, thereby ensuring the purity of the raw material trichlorosilane in the vaporizer, improving the vaporization efficiency, and thereby maximizing the preparation purity and product quality of polysilicon.

[0006] In order to achieve the above objectives, this application provides the following technical solutions:

[0007] In a first aspect, an embodiment of the present application provides a vaporizer impurity removal device, comprising a vaporizer shell, the vaporizer shell having a vaporizer kettle, a plurality of impurity removal ports being provided at the bottom of the vaporizer shell, the plurality of impurity removal ports being connected to the vaporizer kettle and the outside, the plurality of impurity removal ports being used to continuously discharge high-boiling substances in the vaporizer kettle during a gasification process; a one-way valve being provided at each of the impurity removal ports, the one-way valve being used to control the opening or closing of the impurity removal ports.

[0008] In a possible implementation, it further includes a plurality of impurity discharge pipes, which are connected to the plurality of impurity discharge ports in a one-to-one correspondence; the vaporizer impurity discharge device further includes a collecting pipe, and the outlets of the plurality of impurity discharge pipes are all connected to the collecting pipe.

[0009] In a possible implementation, at least a portion of the bottom surface of the vaporizer shell is an inclined surface, and the impurity discharge port is opened at the lowest point of the vaporizer shell; and / or the diameter of the impurity discharge pipe gradually decreases along the direction from the vaporizer kettle of the vaporizer shell to the outside of the vaporizer shell; and / or the bottom of the vaporizer shell is funnel-shaped.

[0010] In a possible implementation, a liquid-phase feed port and a gas-phase discharge port are provided on the vaporizer shell, the liquid-phase feed port and the gas-phase discharge port are connected to the vaporizer kettle and the outside respectively, the liquid-phase feed port is used to introduce liquid-phase trichlorosilane into the vaporizer kettle, and the gas-phase discharge port is used to discharge gaseous trichlorosilane generated in the vaporizer kettle during the gasification process; the liquid-phase feed port and the plurality of impurity discharge ports are staggered up and down along the height direction of the vaporizer shell; and / or the gas-phase discharge port and the plurality of impurity discharge ports are staggered up and down along the height direction of the vaporizer shell.

[0011] In a possible implementation, it further includes a pipe cooling member, which is wrapped around at least the outside of the exhaust pipe; the vaporizer exhaust device also includes a temperature detection member, which is installed upstream of the pipe cooling member, and the temperature detection member is used to detect the temperature of high boiling substances in the exhaust pipe before cooling; and / or, the temperature detection member is installed downstream of the pipe cooling member, and the temperature detection member is used to detect the temperature of high boiling substances in the exhaust pipe after cooling.

[0012] In a possible implementation, the main one-way valve and the auxiliary one-way valve are respectively arranged at different impurity discharge ports, the main one-way valve is used to control the opening or closing of the corresponding impurity discharge port during continuous impurity discharge, and the main one-way valve is also used to control the closing of the corresponding impurity discharge port during emergency impurity discharge; the auxiliary one-way valve is used to control the opening of the corresponding impurity discharge port during emergency impurity discharge; and / or the main one-way valve and the auxiliary one-way valve are arranged at the same impurity discharge port, during continuous impurity discharge, the main one-way valve is opened and the auxiliary one-way valve is closed; during emergency impurity discharge, the main one-way valve is closed and the auxiliary one-way valve is opened.

[0013] In a possible implementation, it further includes a recycling material, the recycling material is connected to the impurity discharge port, and the recycling material is used to recover high boiling points discharged through the impurity discharge port.

[0014] In one possible implementation, the recycled material includes a main recycled material, which is used to recover high boiling points discharged through the impurity discharge port during a normal impurity discharge process; and / or the recycled material also includes an auxiliary recycled material, which is used to recover high boiling points discharged through the impurity discharge port during an emergency impurity discharge process.

[0015] In a possible implementation, the collecting pipe includes a vertical section and a horizontal section, the two ends of the vertical section are respectively connected to the impurity discharge pipe and the horizontal section, and the end of the horizontal section away from the vertical section is connected to the recovered material; along the discharge direction of the high-boiling material, the horizontal section is inclined downward relative to the vertical section, and the angle between the horizontal section and the vertical section ranges from 90° to 180°.

[0016] In a second aspect, an embodiment of the present application provides a polysilicon preparation system, comprising at least a distillation device and a reduction device, wherein the reduction device comprises a reduction device and a vaporizer impurity removal device, wherein the vaporizer impurity removal device is located between the distillation device and the reduction device; the vaporizer impurity removal device is connected to the distillation device through a liquid phase feed port, and is connected to the reduction device through a gas phase discharge port; the reduction device is a reduction furnace; and / or the distillation equipment is mainly used for recovering materials.

[0017] The vaporizer impurity removal device and polysilicon preparation system provided by the present application, the vaporizer impurity removal device includes a vaporizer shell, and a plurality of impurity removal ports are arranged at the bottom of the vaporizer shell. In this way, during the vaporization process, impurities such as high-boiling substances gathered at various points inside the vaporizer shell can be discharged and removed in time through the plurality of impurity removal ports, so as to achieve continuous impurity removal and improve the impurity removal effect, which helps to ensure the timely and effective discharge of high-boiling substances and impurities during the vaporization process, thereby ensuring the purity of the raw material trichlorosilane in the vaporizer, improving the vaporization efficiency, and thereby ensuring the preparation purity and product quality of polysilicon to the greatest extent, and improving the stability and safety during the operation of the equipment; by arranging a one-way valve at the impurity removal port, the degree of automation is relatively high, which helps to improve the impurity removal speed during the impurity removal process, save impurity removal time, save time and effort, and help improve user experience.

[0018] The structure of the present application and its other application objects and beneficial effects will be more clearly understood through the description of the preferred embodiments in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0020] Figure 1 A schematic diagram of a process flow of a polysilicon preparation system provided in an embodiment of the present application;

[0021] Figure 2 A simplified structural diagram of a polysilicon preparation system provided in an embodiment of the present application;

[0022] Figure 3 Schematic diagram of the structure of the vaporizer impurity removal device provided in the embodiment of the present application Figure 1 ;

[0023] Figure 4 Schematic diagram of the structure of the vaporizer impurity removal device provided in the embodiment of the present application Figure 2 ;

[0024] Figure 5 A schematic diagram of the internal structure of a carburetor impurity removal device provided in an embodiment of the present application;

[0025] Figure 6 A side view of a carburetor impurity removal device provided in an embodiment of the present application;

[0026] Figure 7 Schematic diagram of the structure of the carburetor shell and the impurity discharge port of the carburetor impurity discharge device provided in the embodiment of the present application Figure 1 ;

[0027] Figure 8 Schematic diagram of the structure of the carburetor shell and the impurity discharge port of the carburetor impurity discharge device provided in the embodiment of the present application Figure 2 ;

[0028] Fig. 9 Schematic diagram of the structure of the carburetor shell and the impurity discharge port of the carburetor impurity discharge device provided in the embodiment of the present application Figure 3 ;

[0029] Fig.10 Schematic diagram of the structure of the carburetor shell and the impurity discharge port of the carburetor impurity discharge device provided in the embodiment of the present application Figure 4 ;

[0030] Fig.11 Schematic diagram of the structure of the carburetor shell and the impurity discharge port of the carburetor impurity discharge device provided in the embodiment of the present application Figure 5 ;

[0031] Fig.12 Schematic diagram of the structure of the carburetor shell and the impurity discharge port of the carburetor impurity discharge device provided in the embodiment of the present application Figure 6 .

[0032] Description of reference numerals:

[0033] 100-Carburettor impurity removal device;

[0034] 110-vaporizer shell; 111-vaporizer kettle; 112-exhaust port;

[0035] 113-liquid phase feed port; 114-gas phase discharge port; 120-exhaust pipe;

[0036] 130-manifold; 131-horizontal section; 132-vertical section;

[0037] 150-pipe cooling parts; 160-temperature detection parts; 170-recycling materials;

[0038] 171-main recycling materials; 172-auxiliary recycling materials;

[0039] 200-distillation equipment; 300-reduction equipment; 310-reduction device. DETAILED DESCRIPTION

[0040] The trichlorosilane vaporizer is an important device in the reduction device that converts liquid trichlorosilane into gaseous trichlorosilane. Since the liquid trichlorosilane entering the vaporizer contains silicon tetrachloride and other high-boiling component impurities, the continuous vaporization of trichlorosilane will lead to the accumulation and enrichment of impurity components, affecting the vaporization effect.

[0041] In the related art, most of the impurity discharge settings of trichlorosilane vaporizers have only one impurity discharge port, which is used for semi-continuous or intermittent accidental impurity discharge. However, in the related art, since only one impurity discharge port is opened, it is easy to cause the problem of untimely impurity discharge, which in turn causes high-boiling substances to mix into the raw material trichlorosilane, resulting in low product quality. In addition, untimely impurity discharge will cause high-boiling substances to continue to accumulate, causing the operating temperature of the trichlorosilane vaporizer to increase, affecting the vaporization effect. Therefore, continuous impurity discharge is often required to ensure timely and effective removal of high-boiling substances and impurities.

[0042] Based on the above technical problems, the embodiments of the present application provide a vaporizer impurity removal device and a polysilicon preparation system, so that during the vaporization process, high-boiling substances and other impurities gathered at various points inside the vaporizer shell can be discharged and removed in time through multiple impurity removal ports, thereby achieving continuous impurity removal and improving the impurity removal effect, which helps to ensure the timely and effective discharge of high-boiling substances and impurities during the vaporization process, thereby ensuring the purity of the raw material trichlorosilane in the vaporizer, improving the vaporization efficiency, and thereby maximizing the preparation purity and product quality of polysilicon, and improving the stability and safety of the equipment during operation; by arranging a one-way valve at the impurity removal port, the degree of automation is relatively high, which helps to increase the impurity removal speed during the impurity removal process, save impurity removal time, save time and effort, and help improve user experience.

[0043] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0044] Reference Figure 1 and Figure 2 As shown, an embodiment of the present application provides a polysilicon preparation system, which includes at least a distillation device 200 and a reduction device 300 , wherein the reduction device 300 includes a reduction device 310 and a vaporizer impurity removal device 100 , and the vaporizer impurity removal device 100 is connected between the distillation device 200 and the reduction device 310 .

[0045] Illustratively, the reduction device 310 in this embodiment may be a reduction furnace.

[0046] The preparation process of polysilicon is described as follows: Since Siemens invented the method of depositing polysilicon by reacting purified trichlorosilane on the surface of a heated silicon core in a hydrogen atmosphere, after more than half a century of improvements, the comprehensive utilization of silicon tetrachloride and the "dry recovery" of reduced tail gas have been gradually added, and the process technology has been perfected, which is the modified Siemens method that is currently widely used.

[0047] The improved Siemens method for producing polysilicon includes: chlorine gas after liquid chlorine is vaporized and hydrogen is used to synthesize hydrogen chloride in a synthesis furnace, the generated hydrogen chloride and silicon powder are reacted in a trichlorosilane synthesis furnace to generate trichlorosilane, and at the same time, a cold hydrogenation device is used to react silicon powder with silicon tetrachloride, hydrogen chloride and hydrogen recovered from the reduction tail gas to generate trichlorosilane, and the mixed gas after thorough dust removal is separated through a condenser to obtain hydrogen and a mixed liquid composed of trichlorosilane generated by the reaction, unreacted silicon tetrachloride, etc., and the hydrogen is returned to the system to participate in the reaction again, and the mixed liquid is separated into high-purity trichlorosilane by a rectification method (silicon tetrachloride is purified and then returned to cold hydrogenation for recycling), and then the vaporized trichlorosilane and hydrogen are mixed in a certain proportion and introduced into a polysilicon reduction furnace, and a voltage is applied to both ends of a rod-shaped silicon core placed in the reduction furnace to generate a high temperature. On the surface of the high-temperature silicon core, trichlorosilane is reduced to elemental silicon by hydrogen and deposited on the surface of the silicon core, gradually generating a polysilicon rod of the required specification.

[0048] The core process equipment of polysilicon includes: cold hydrogenation (including slag slurry and high boiling treatment), reduction, distillation (including adsorption and anti-disproportionation), and tail gas recovery. The main production process is as follows: Figure 1 shown.

[0049] The vaporizer impurity removal device 100 provided in the embodiment of the present application is mainly used in the reduction process, wherein the reduction process is in the third stage in the entire polysilicon preparation process.

[0050] The reduction equipment 300 generally includes: a trichlorosilane vaporizer, a trichlorosilane superheater, a mixer, an exhaust gas heat exchanger, a reduction furnace, an exhaust gas cooler, a furnace shutdown cooling system, a chassis cooling system, an electrode power regulation cooling system, etc.

[0051] The reduction process of the reduction device 300 is described as follows:

[0052] After the necessary analysis and compliance with the specified requirements, the high-purity trichlorosilane from the distillation workshop is sent to the trichlorosilane vaporizer. At an operating pressure of 0.8MPa(G), it is vaporized by hydrogen bubbling in proportion. The high-purity preheated hydrogen from the outside of the boundary area is controlled by a flow meter to adjust the feed molar ratio of trichlorosilane gas and hydrogen. The mixed gas is uniformly mixed in the static mixer. The mixed gas enters the reduction furnace through the nozzle at a temperature of about 130°C and the deposition reaction is carried out at 1080°C and 0.55MPa(G). The tail gas from the reduction furnace is heat-exchanged to 200°C by the tail gas cooler and leaves the reduction device. The circulating hydrogen and chlorosilane separated in the reduction tail gas recovery section are reused.

[0053] On the surface of the high-temperature silicon core (silicon rod) in the furnace, trichlorosilane is reduced by hydrogen to crystalline silicon and deposited on the surface of the silicon core (silicon rod), causing the diameter of the silicon rod to continue to grow until it reaches the specified size.

[0054] During the reduction process, the main chemical reaction formula of trichlorosilane is as follows: 2SiHCl3+(H2)=Si+SiCl4+2HCl+(H2).

[0055] Among them, since the liquid trichlorosilane entering the trichlorosilane vaporizer contains silicon tetrachloride and other high-boiling impurities, the continuous vaporization of trichlorosilane will lead to the accumulation and enrichment of impurities, affecting the vaporization effect. Therefore, it is necessary to remove silicon tetrachloride and other high-boiling substances and impurities in the trichlorosilane vaporizer in a timely manner.

[0056] Reference Figures 3 to 6 As shown, an embodiment of the present application provides a vaporizer impurity removal device 100, including a vaporizer shell 110, the vaporizer shell 110 has a vaporizer kettle 111, and a plurality of impurity removal ports 112 are opened at the bottom of the vaporizer shell 110, and the plurality of impurity removal ports 112 are connected to the vaporizer kettle 111 and the outside, and the plurality of impurity removal ports 112 are used to discharge impurities in the vaporizer kettle 111 during the gasification process.

[0057] In the embodiment of the present application, it can be understood that the process of converting liquid trichlorosilane into gaseous trichlorosilane occurs in the vaporizer kettle 111 of the vaporizer shell 110 .

[0058] The shape, size and material of the vaporizer housing 110 are not limited and can be set according to actual needs. For example, the vaporizer housing 110 can be made of stainless steel or other corrosion-resistant materials, which helps to withstand gas erosion.

[0059] In the embodiment of the present application, there is no limitation on the number of the impurity exhaust ports 112. For example, the number of the impurity exhaust ports 112 may be two, and the two impurity exhaust ports 112 are spaced apart at the bottom of the carburetor housing 110; or, the number of the impurity exhaust ports 112 may be three, and the three impurity exhaust ports 112 are spaced apart at the bottom of the carburetor housing 110; or, the number of the impurity exhaust ports 112 may be more, and multiple impurity exhaust ports 112 are spaced apart at the bottom of the carburetor housing 110.

[0060] In this embodiment, refer to Figures 3 to 5 As shown, the three impurity discharge ports 112 are mainly provided at the bottom of the carburetor housing 110 for illustration.

[0061] In the embodiment of the present application, the shapes of the plurality of debris discharge openings 112 are not limited. For example, the shapes of the debris discharge openings 112 can be circular, square, triangular or polygonal. This embodiment does not limit this. In addition, the shapes of the plurality of debris discharge openings 112 can be the same or different, and this embodiment does not limit this.

[0062] In the present application, refer to Figure 5 and Figure 6 As shown, there is no limitation on the arrangement of the plurality of impurity discharge openings 112. For example, the plurality of impurity discharge openings 112 may be arranged at equal intervals along the bottom of the carburetor housing 110; or, the plurality of impurity discharge openings 112 may be arranged in a staggered manner along the height direction of the carburetor housing 110; or, the plurality of impurity discharge openings 112 may be arranged at unequal intervals, which may be arranged according to actual needs, and this embodiment does not limit this.

[0063] By providing a plurality of impurity discharge ports 112 at the bottom of the vaporizer shell 110, compared with the related art in which there is only one impurity discharge port 112, in the vaporization process of this embodiment, impurities such as high boiling points gathered at various points inside the vaporizer shell 110 can be discharged and removed in time through the plurality of impurity discharge ports 112, thereby achieving continuous impurity discharge and improving the impurity discharge effect, which helps to ensure the timely and effective discharge of high boiling point impurities during the vaporization process, thereby ensuring the purity of the raw material trichlorosilane in the vaporizer kettle 111, improving the vaporization effect, thereby ensuring the preparation purity and product quality of polysilicon to the greatest extent, and improving the stability and safety of the equipment during operation.

[0064] In order to further improve the impurity removal efficiency, in the embodiment of the present application, each impurity removal port 112 may be provided with a one-way valve, and the one-way valve is used to control the opening or closing of the impurity removal port 112 .

[0065] It should be noted that the one-way valve is also called a non-return valve, a check valve or a non-return valve, and its function is to allow the medium to flow in only one direction to prevent backflow. This helps to prevent the discharged high-boiling substances and other impurities from flowing back into the vaporizer kettle 111, thereby ensuring the normal discharge of high-boiling substances.

[0066] In the embodiment of the present application, there is no limitation on the opening or closing method of the one-way valve. For example, a controller may be included, the controller is electrically connected to the one-way valve, and the controller controls the opening or closing of the one-way valve, thereby realizing the opening or closing of the impurity discharge port 112; for example, the one-way valve may also be opened or closed manually; for example, magnetic adsorption materials may be respectively arranged at the positions corresponding to the one-way valve and the impurity discharge port 112, so that the one-way valve opens under the action of its own gravity, and when the high-boiling substances are discharged, the one-way valve is adsorbed back to the impurity discharge port 112 under the action of magnetic force. This embodiment does not limit this.

[0067] Illustratively, the one-way valve of this embodiment may be an electrically controlled valve or a solenoid valve, wherein the electrically controlled valve may be implemented by using an ordinary small motor with a reduction gearbox to drive the valve to rotate to achieve opening and closing, which is not limited in this embodiment.

[0068] In the embodiment of the present application, the number of one-way valves may include multiple ones, wherein the number of one-way valves may correspond to the number of the impurity discharge ports 112, for example, the number of one-way valves may be set to three. In this way, each one-way valve controls the opening or closing of each impurity discharge port 112 one by one. The present application has a high degree of automation, which helps to improve the impurity discharge speed during the impurity discharge process, saves impurity discharge time, saves time and effort, and helps to improve user experience.

[0069] In a possible implementation, in the embodiment of the present application, referring to Figure 4 As shown, a plurality of impurity discharge pipes 120 may be further included, and the plurality of impurity discharge pipes 120 are connected to the plurality of impurity discharge ports 112 in a one-to-one correspondence.

[0070] In the embodiment of the present application, there is no limitation on the number of the impurity discharge pipes 120. For example, the number of the impurity discharge pipes 120 can be two, three or more. In the present embodiment, three impurity discharge pipes 120 are mainly used as an example for explanation, and the three impurity discharge pipes 120 are connected to the three impurity discharge ports 112 in a one-to-one correspondence.

[0071] In this way, the impurity discharge pipe 120 can guide and gather impurities such as high boiling points, and the high boiling points are discharged through the impurity discharge port 112 and the impurity discharge pipe 120 in sequence, which helps to increase the discharge speed of impurities such as high boiling points.

[0072] It should be noted that the impurity discharge pipe 120 is a one-way pipe, which helps to prevent the discharged high-boiling substances and other impurities from flowing back into the vaporizer shell 110, and further effectively ensures the smooth discharge of high-boiling substances and other impurities.

[0073] In the present application, refer to Figure 4 As shown, the vaporizer impurity exhaust device 100 may further include a manifold 130, and the outlets of the plurality of impurity exhaust pipes 120 are all connected to the manifold 130. In this way, impurities are discharged sequentially through the impurity exhaust port 112, the impurity exhaust pipe 120 and the manifold 130. This embodiment does not limit this.

[0074] In the embodiment of the present application, there is no limitation on the shape, material, size, etc. of the impurity removal pipe 120 and the manifold 130. For example, the impurity removal pipe 120 and the manifold 130 can be a round tube, a square tube, etc. For example, the impurity removal pipe 120 and the manifold 130 can be made of a high temperature resistant material, which helps to avoid the risk of impurities such as high-temperature high boiling substances damaging the impurity removal pipe 120 and the manifold 130.

[0075] In order to improve and optimize the removal effect of impurities such as high boiling points, in the embodiments of the present application, one embodiment is to refer to Figure 7 As shown, the bottom surface of the carburetor housing 110 may be a horizontal surface, and the impurity discharge port 112 is opened on the bottom surface of the carburetor housing 110. Figure 8 As shown, at least a portion of the bottom surface of the carburetor housing 110 may be an inclined surface, and the impurity discharge port 112 is opened at the lowest point of the carburetor housing 110 .

[0076] It should be noted that the shape of the carburetor housing in this embodiment includes but is not limited to the above-mentioned shapes, and can be specifically set according to actual needs.

[0077] In this way, during the impurity removal process, high boiling points can be promoted to quickly reach the position of the impurity removal port 112, which helps to speed up the impurity removal speed. Impurities such as high boiling points gathered at various points on the bottom of the vaporizer shell 110 can be discharged in time, achieving continuous impurity removal and improving the impurity removal effect, thereby ensuring the purity of the raw material trichlorosilane in the vaporizer kettle 111, improving the vaporization effect, and thereby maximizing the purity of the polysilicon preparation and the product quality.

[0078] It should be noted that, in this embodiment, the inclination angle of the bottom surface of the carburetor housing 110 is not limited and can be set according to actual conditions.

[0079] In the present application, refer to Figures 9 to 11 As shown, the bottom of the vaporizer housing 110 may be funnel-shaped, which can also promote high-boiling substances to quickly reach the position of the impurity discharge port 112, thereby achieving continuous impurity discharge and improving the impurity discharge effect.

[0080] In some embodiments, reference Fig. 9 As shown, in this embodiment, the bottom surface of the carburetor housing 110 may be conical; in some embodiments, referring to Fig.10 As shown, the bottom surface of the vaporizer housing 110 may be a flat surface; or, in some embodiments, Fig.11 As shown, the bottom surface of the vaporizer housing 110 may also be a curved surface, which is not limited in this embodiment. Through the above structure, high boiling materials can be promoted to quickly reach the position of the impurity discharge port 112, thereby achieving continuous impurity discharge and improving the impurity discharge effect.

[0081] In the present application, refer to Fig.12 As shown, the diameter of the impurity discharge pipe 120 can be gradually reduced along the direction from the vaporizer kettle 111 of the vaporizer shell 110 to the outside of the vaporizer shell 110. It can be understood that the diameter of the pipe opening of the impurity discharge pipe 120 can be set larger on the side close to the vaporizer shell 110. In this way, the impurity discharge area of ​​the impurity discharge opening 112 of the vaporizer shell 110 can be increased, which is also beneficial to increase the impurity discharge speed and improve the impurity discharge effect.

[0082] In one possible implementation, referring to Figure 3 As shown, a liquid phase feed port 113 and a gas phase discharge port 114 may be provided on the vaporizer shell 110, and the liquid phase feed port 113 and the gas phase discharge port 114 are respectively connected to the vaporizer kettle 111 and the outside, the liquid phase feed port 113 is used to introduce liquid phase trichlorosilane into the vaporizer kettle 111, and the gas phase discharge port 114 is used to discharge the gas phase trichlorosilane generated in the vaporizer kettle 111 during the gasification process.

[0083] In the embodiment of the present application, there is no limitation on the number, shape, size, position, etc. of the liquid phase feed port 113 and the gas phase discharge port 114. For example, the shape of the liquid phase feed port 113 can be circular, square, triangular, etc., and the shape of the gas phase discharge port 114 can be circular, square, triangular, etc. This embodiment does not limit this, and it can be set according to actual needs.

[0084] In the embodiment of the present application, the liquid phase feed port 113 and the plurality of impurity discharge ports 112 may be staggered vertically along the height direction of the vaporizer shell 110 , and the gas phase discharge port 114 and the plurality of impurity discharge ports 112 may be staggered vertically along the height direction of the vaporizer shell 110 .

[0085] Illustratively, in this embodiment, the impurity discharge port 112 is opened at the bottom of the vaporizer shell 110 , and the liquid phase feed port 113 and the gas phase discharge port 114 are opened at different positions on the top of the vaporizer shell 110 .

[0086] It should be noted that the staggered opening means that the opening positions of the liquid-phase feed port 113 and the plurality of impurity discharge ports 112 are not directly opposite. For example, the orthographic projection of the liquid-phase feed port 113 on the bottom surface of the vaporizer shell 110 does not overlap with the plurality of impurity discharge ports 112. In this way, it is helpful to avoid the liquid-phase trichlorosilane entering the vaporizer kettle 111 from being directly discharged from the impurity discharge port 112, thereby ensuring the complete reaction of the liquid-phase trichlorosilane in the vaporizer shell 110 and avoiding the waste of raw materials.

[0087] Similarly, the gas phase discharge port 114 and the plurality of impurity discharge ports 112 are not directly opposite to each other. For example, the orthographic projection of the gas phase discharge port 114 on the bottom surface of the vaporizer shell 110 does not overlap with the plurality of impurity discharge ports 112. This helps to avoid mutual interference between the discharge of gas phase trichlorosilane and the discharge of high boiling products during the reaction process, thereby facilitating the normal discharge of gas phase trichlorosilane and the normal discharge of high boiling products.

[0088] In one possible implementation, referring to Figure 4 As shown, a pipeline cooling member 150 may also be included.

[0089] In the embodiment of the present application, there is no limitation on the type of the pipe cooling component 150. For example, the pipe cooling component 150 can be a pipe water jacket. Pipe water jacket cooling is a common industrial cooling technology. It usually flows a cooling medium (usually water or other coolant) through the outer wall of the pipe, which can quickly take away the heat from the pipe surface, thereby reducing the temperature of the pipe surface; at the same time, it can quickly conduct heat from the pipe to the cooling medium, and can quickly and effectively reduce the temperature inside the pipe.

[0090] For example, the direction of cooling water supply and cooling water return can refer to Figure 4 shown.

[0091] In the embodiment of the present application, there is no limitation on the number of the pipeline cooling members 150. For example, the number of the pipeline cooling members 150 may be two, three or more, which may be set according to actual needs.

[0092] In the embodiment of the present application, there is no limitation on the location of the pipe cooling member 150. For example, multiple pipe cooling members 150 can be wrapped one by one on at least the outside of multiple impurity discharge pipes 120. In this way, the high-temperature impurities entering the impurity discharge pipe 120 can be effectively cooled down under the action of the pipe cooling member 150, thereby ensuring the stability of the impurities discharged, and then the impurities after cooling can be recycled and reused.

[0093] Exemplarily, the pipe cooling member 150 may also be wrapped around at least the outside of the manifold 130. This embodiment is not limited to this.

[0094] In the present application, refer to Figure 4 As shown, a temperature detection member 160 may be provided on the impurity discharge pipe 120. In this way, the temperature detection member 160 can detect the temperature of impurities such as high boiling substances in the pipe, thereby helping to ensure the recycling of impurities such as high boiling substances.

[0095] In the embodiment of the present application, there is no limitation on the type of the temperature detection element 160. For example, the temperature detection element 160 may be a thermocouple sensor, a thermistor sensor, or a resistance temperature detection element 160. This embodiment does not limit this.

[0096] In the embodiment of the present application, there is no limitation on the location of the temperature detection member 160. For example, the temperature detection member 160 can be installed upstream of the pipeline cooling member 150, and the temperature detection member 160 is used to detect the temperature of the high-boiling substances in the exhaust pipe 120 before cooling; for example, the temperature detection member 160 can be located downstream of the pipeline cooling member 150, and the temperature detection member 160 is used to detect the temperature of the high-boiling substances in the exhaust pipe 120 after cooling. This embodiment does not limit this, and it can be specifically set according to actual needs.

[0097] In a possible implementation, the one-way valve may include a main one-way valve and an auxiliary one-way valve.

[0098] In one embodiment, the main check valve and the auxiliary check valve can be respectively arranged at different impurity discharge ports 112. For example, the number of impurity discharge ports 112 includes three, the main check valve is arranged at one of the impurity discharge ports 112, and the auxiliary check valve is arranged at the remaining two impurity discharge ports 112; or, the main check valve is arranged at two of the impurity discharge ports 112, and the auxiliary check valve is arranged at the remaining one of the impurity discharge ports 112. This embodiment does not limit this.

[0099] The main one-way valve is used to control the opening or closing of the corresponding impurity discharge port 112 during the continuous impurity discharge process, and the main one-way valve is also used to control the closing of the corresponding impurity discharge port 112 during the emergency impurity discharge process; the auxiliary one-way valve is used to control the opening of the corresponding impurity discharge port 112 during the emergency impurity discharge process.

[0100] It should be noted that the emergency impurity removal process can be understood as: the high boiling points and other impurities in the vaporizer kettle 111 are detected as unqualified, and it is necessary to prevent the unqualified high boiling points and other impurities from being normally recovered to the recycled materials such as the distillation equipment 200. At this time, the unqualified high boiling points and other impurities need to be recovered to other work sections for reuse.

[0101] Another embodiment is that the main check valve and the auxiliary check valve can be arranged at the same impurity discharge port 112. In this way, the main check valve and the auxiliary check valve can be switched to each other, and continuous impurity discharge and emergency impurity discharge can also be realized. Specifically, during the continuous impurity discharge process, the main check valve is opened and the auxiliary check valve is closed; during the emergency impurity discharge process, the main check valve is closed and the auxiliary check valve is opened.

[0102] It should be noted that in the embodiments of the present application, the application scenarios of the one-way valve include but are not limited to the above two impurity removal processes, and can be specifically configured according to actual needs.

[0103] In one possible implementation, referring to Figure 2 and Figure 4 As shown, it can also include recycled material 170, which is connected to the impurity discharge port 112 and is used to recover high boiling substances discharged through the impurity discharge port 112. In this way, the discharged high boiling substances can be recovered into the recycled material 170 for reuse, which helps to reasonably utilize the discharged high boiling substances and other impurities, helps to avoid waste of materials, and saves costs.

[0104] In a possible implementation, the recycled material 170 may include a main recycled material 171, and the main recycled material 171 is used to recover high boiling substances discharged through the impurity discharge port 112 during the normal impurity discharge process. In this way, the discharged high boiling substances that have passed the inspection can be recycled into the main recycled material 171 for reuse, which helps to reasonably utilize the discharged high boiling substances and other impurities, helps to avoid waste of materials, and saves costs.

[0105] In addition, in order to reasonably utilize the high-boiling substances that fail the test and avoid contaminating other materials. In the embodiment of the present application, the recycled material 170 may also include an auxiliary recycled material 172, which is used to recover the high-boiling substances discharged through the impurity discharge port 112 during the emergency impurity discharge process. In this way, the discharged high-boiling substances that fail the test can be recycled into the auxiliary recycled material 172 for reuse, which helps to reasonably utilize the discharged high-boiling substances and other impurities, which is beneficial to avoid waste of materials and save costs.

[0106] It should be noted that the main recovery material 171 in the embodiment of the present application may be located in the distillation device 200. In addition, there is no limitation on the auxiliary recovery material 172. For example, the auxiliary recovery material 172 may be a recycling station for storing unqualified materials.

[0107] In one possible implementation, referring to Figure 4 As shown, the manifold 130 may include a vertical section 132 and a horizontal section 131 , the two ends of the vertical section 132 are respectively connected to the impurity discharge pipe 120 and the horizontal section 131 , and the end of the horizontal section 131 away from the vertical section 132 is connected to the recycled material 170 .

[0108] In this way, high boiling points are discharged in sequence through the impurity discharge port 112, the impurity discharge pipe 120, the vertical section 132 of the manifold 130, and the horizontal section 131 of the manifold 130. The vertical section 132 can increase the discharge speed, thereby improving the discharge efficiency of high boiling points and other impurities, thereby achieving continuous impurity discharge.

[0109] In the embodiment of the present application, along the discharge direction of high-boiling substances, the horizontal section 131 can be tilted downward relative to the vertical section 132, and the angle between the horizontal section 131 and the vertical section 132 can be between 90° and 180°. In this way, along the inclined horizontal section 131, the discharge speed of impurities can be further increased, thereby improving the discharge efficiency of impurities such as high-boiling substances, and achieving continuous impurity discharge.

[0110] In the embodiment of the present application, the discharge direction of high boiling substances can refer to Figure 4 Indicated by the direction of arrow A.

[0111] In the embodiment of the present application, the angle α between the horizontal section 131 and the vertical section 132 is not limited. For example, the angle α between the horizontal section 131 and the vertical section 132 can be set to 90°, 100°, 110°, 120°, 130°, 140°, 150°, 180° or any value between 90° and 180° according to actual needs. This embodiment does not limit this. In this way, it is helpful to ensure that the horizontal section 131 has a downward slope, thereby ensuring the discharge speed of impurities and improving the discharge efficiency of impurities such as high boiling points.

[0112] The vaporizer impurity removal device and polysilicon preparation system provided by the present application, the vaporizer impurity removal device includes a vaporizer shell, and a plurality of impurity removal ports are arranged at the bottom of the vaporizer shell. In this way, during the vaporization process, impurities such as high-boiling substances gathered at various points inside the vaporizer shell can be discharged and removed in time through the plurality of impurity removal ports, so as to achieve continuous impurity removal and improve the impurity removal effect, which helps to ensure the timely and effective discharge of high-boiling impurities during the vaporization process, thereby ensuring the purity of the raw material trichlorosilane in the vaporizer kettle, improving the vaporization effect, and thereby ensuring the preparation purity and product quality of polysilicon to the greatest extent, and improving the stability and safety during the operation of the equipment; by arranging a one-way valve at the impurity removal port, the degree of automation is relatively high, which helps to improve the impurity removal speed during the impurity removal process, save impurity removal time, save time and effort, and help improve user experience.

[0113] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0114] In the description of the present application, it should be understood that the terms "including" and "having" and any variations thereof used herein are intended to cover non-exclusive inclusions. For example, a process, method, system, product or apparatus comprising a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to these processes, methods, products or apparatuses.

[0115] Unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium, and it can make the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0116] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A carburetor impurity removal device, characterized in that: The invention comprises a vaporizer shell, wherein the vaporizer shell has a vaporizer kettle, and a plurality of impurity discharge ports are provided at the bottom of the vaporizer shell, wherein the plurality of impurity discharge ports are connected to the vaporizer kettle and the outside, and the plurality of impurity discharge ports are used to continuously discharge high-boiling substances in the vaporizer kettle during the gasification process; A one-way valve is provided at each of the impurity discharge ports, and the one-way valve is used to control the opening or closing of the impurity discharge port.

2. The carburetor impurity removal device according to claim 1, characterized in that: It also includes a plurality of impurity discharge pipes, wherein the plurality of impurity discharge pipes are connected to the plurality of impurity discharge ports in a one-to-one correspondence; The vaporizer exhaust device also includes a collecting pipe, and the outlets of the plurality of exhaust pipes are all connected to the collecting pipe.

3. The carburetor impurity removal device according to claim 2, characterized in that: The bottom surface of the carburetor housing is a horizontal surface; And / or, at least a portion of the bottom surface of the carburetor housing is an inclined surface, and the impurity discharge port is opened at the lowest point of the carburetor housing; And / or, the diameter of the impurity exhaust pipe gradually decreases along the direction from the vaporizer kettle of the vaporizer shell to the outside of the vaporizer shell; and / or, the bottom of the vaporizer shell is funnel-shaped.

4. The carburetor impurity removal device according to any one of claims 1 to 3, characterized in that: The vaporizer shell is provided with a liquid phase feed port and a gas phase discharge port, the liquid phase feed port and the gas phase discharge port are respectively connected to the vaporizer kettle and the outside, the liquid phase feed port is used to introduce liquid phase trichlorosilane into the vaporizer kettle, and the gas phase discharge port is used to discharge gas phase trichlorosilane generated during the gasification process; The liquid-phase feed port and the plurality of impurity discharge ports are staggered up and down along the height direction of the vaporizer shell; and / or the gas-phase discharge port and the plurality of impurity discharge ports are staggered up and down along the height direction of the vaporizer shell.

5. The carburetor impurity removal device according to claim 2 or 3, characterized in that: Also included is a pipe cooling member, the pipe cooling member is wrapped around at least the outside of the impurity discharge pipe; The vaporizer impurity removal device also includes a temperature detection component, which is installed upstream of the pipeline cooling component, and the temperature detection component is used to detect the temperature of high boiling substances in the impurity removal pipe before cooling; and / or, the temperature detection component is installed downstream of the pipeline cooling component, and the temperature detection component is used to detect the temperature of high boiling substances in the impurity removal pipe after cooling.

6. The vaporizer impurity removal device according to any one of claims 1 to 3, characterized in that: The one-way valve comprises a main one-way valve and an auxiliary one-way valve; The main one-way valve and the auxiliary one-way valve are respectively arranged at different impurity discharge ports, the main one-way valve is used to control the corresponding impurity discharge port to be opened or closed during the continuous impurity discharge process, and the main one-way valve is also used to control the corresponding impurity discharge port to be closed during the emergency impurity discharge process; the auxiliary one-way valve is used to control the corresponding impurity discharge port to be opened during the emergency impurity discharge process; And / or, the main one-way valve and the auxiliary one-way valve are arranged at the same impurity discharge port, and during continuous impurity discharge, the main one-way valve is opened and the auxiliary one-way valve is closed; during emergency impurity discharge, the main one-way valve is closed and the auxiliary one-way valve is opened.

7. The carburetor impurity removal device according to claim 2 or 3, characterized in that: It also includes a recycling material, which is connected to the impurity discharge port and is used to recover high boiling points discharged through the impurity discharge port.

8. The carburetor impurity removal device according to claim 7, characterized in that: The recycled material includes a main recycled material, and the main recycled material is used to recover high boiling points discharged through the impurity discharge port during a normal impurity discharge process; And / or, the recovered material further includes auxiliary recovered material, and the auxiliary recovered material is used to recover high boiling points discharged through the impurity discharge port during emergency impurity discharge.

9. The carburetor impurity removal device according to claim 7, characterized in that: The manifold comprises a vertical section and a horizontal section, the two ends of the vertical section are respectively connected to the impurity discharge pipe and the horizontal section, and the end of the horizontal section away from the vertical section is connected to the recycled material; Along the discharge direction of the high boiling point, the horizontal section is inclined downward relative to the vertical section, and the angle between the horizontal section and the vertical section is in the range of 90°-180°.

10. A polysilicon preparation system, characterized in that: At least comprising a distillation device and a reduction device, wherein the reduction device comprises a reduction device and a vaporizer impurity removal device according to any one of claims 1 to 9, wherein the vaporizer impurity removal device is located between the distillation device and the reduction device; The vaporizer impurity removal device is connected to the distillation equipment through a liquid phase feed port, and is connected to the reduction device through a gas phase discharge port; The reduction device is a reduction furnace; and / or the main recovered material of the vaporizer impurity removal device is located in the distillation equipment.

Images