Miniature LED device preparation method, miniature LED device and display device

Abstract

The invention provides a miniature LED device preparation method, a miniature LED device and a display device. The method comprises the following steps: obtaining a micro LED structure which comprises a micro LED unit array; an isolation sub-structure array is arranged on the surface of the light emitting side of the micro LED structure, and each isolation sub-structure comprises a reflecting material layer and a first protection layer arranged on the side wall of the reflecting material layer; a refraction material layer is arranged on the top surface of each isolation substructure, so that the refraction material layer covers the top surface of the reflection material layer and the top surface of the first protection layer, each isolation substructure and the corresponding refraction material layer form an isolation structure, and a containing space is formed between every two adjacent isolation structures; all the accommodating spaces form an accommodating space array corresponding to the micro LED unit array, and the difference value between the refractive index of the refractive material layer and the refractive index of the first protective layer is greater than a preset value; and filling quantum dots in the accommodating space array to form a quantum dot array to obtain the micro LED device.

Description

Technical Field

[0001] The present disclosure relates to the technical field of semiconductor Micro LED, and in particular, to a method for preparing a Micro LED device, a Micro LED device and a display device. Background Art

[0002] With people's continuous pursuit of display technology, display technology is gradually developing in the direction of small size and high resolution, among which Micro LED is the representative of miniaturized display technology. Micro LED technology is a technology that miniaturizes, matrices, and thins LED chips, and the size of its pixels is less than 50μm. At present, Micro LED full-color display can be achieved using a color conversion structure, that is, using the color conversion method of quantum dot (QD) materials. However, there are still some problems in the preparation and structure of the color conversion structure, which makes it difficult to meet the increasingly stringent requirements of light output efficiency brought about by pixel miniaturization. Summary of the invention

[0003] The solution disclosed herein provides a method for preparing a micro LED device, a micro LED device, and a display device.

[0004] According to one aspect of an embodiment of the present disclosure, a method for preparing a micro LED device is provided, wherein the method comprises: obtaining a micro LED structure, wherein the micro LED structure comprises a micro LED chip, wherein the micro LED chip comprises a micro LED unit array; arranging an array of isolating substructures on the surface of the light-emitting side of the micro LED structure, wherein each isolating substructure in the array of isolating substructures comprises a reflective material layer and a first protective layer arranged on the side wall of the reflective material layer, and the top surface of the isolating substructure comprises the top surface of the reflective material layer and the top surface of the first protective layer; arranging a refractive material layer on the top surface of each of the isolating substructures, so that the refractive material layer covers the top surface of the reflective material layer and the top surface of the first protective layer, wherein each of the isolating substructures and the corresponding refractive material layer form an isolating structure, all of the isolating structures constitute an isolating structure array, and a containing space is formed between two adjacent isolating structures, all of the containing spaces constitute a containing space array, the containing space array corresponds to the micro LED unit array, wherein the difference between the refractive index of the refractive material layer and the refractive index of the first protective layer is greater than a preset value; filling quantum dots in the containing space array to form a quantum dot array, and obtaining the micro LED device.

[0005] Furthermore, each isolation substructure in the isolation substructure array also includes an isolation column, and the top surface of the isolation substructure also includes the top surface of the isolation column. The isolation substructure array is arranged on the surface of the light-emitting side of the micro-LED structure, including: a first passivation layer having an array of through holes is arranged on the surface of the light-emitting side of the micro-LED structure, so that each through hole in the through hole array exposes a preset exposed portion of the surface of the light-emitting side of the micro-LED structure and corresponds to the micro-LED unit in the micro-LED unit array, and the isolation column is formed between two adjacent through holes; a reflective material layer is arranged on the surface of the isolation column; a first protective layer is arranged on the reflective material layer; and the reflective material layer and the first protective layer above the top of the isolation column are removed to expose the top surface of the isolation column, the top surface of the reflective material layer, and the top surface of the first protective layer.

[0006] Further, a refractive material layer is arranged on the top surface of each of the isolation substructures so that the refractive material layer covers the top surface of the reflective material layer and the top surface of the first protective layer, including: a refractive material layer is arranged on the top surface of each of the isolation substructures so that the refractive material layer covers the top surface of the isolation column, the top surface of the reflective material layer and the top surface of the first protective layer.

[0007] Furthermore, before a first passivation layer having an array of through holes is provided on the surface of the light-emitting side of the micro LED structure, the method further includes: providing an insulating layer on the surface of the light-emitting side of the micro LED structure, providing a first passivation layer having an array of through holes on the surface of the light-emitting side of the micro LED structure, so that each through hole in the through hole array exposes a preset exposed portion of the surface of the light-emitting side of the micro LED structure and corresponds to a micro LED unit in the micro LED unit array, and an isolation column is formed between two adjacent through holes, comprising: providing a first passivation layer on the insulating layer, and opening an array of through holes on the first passivation layer, so that each through hole in the through hole array exposes a preset exposed portion of the insulating layer and corresponds to a micro LED unit in the micro LED unit array, and an isolation column is formed between two adjacent through holes.

[0008] Furthermore, each micro LED unit in the micro LED unit array includes a first semiconductor layer on the light emitting side, and before setting the insulating layer on the surface of the light emitting side of the micro LED structure, the method also includes: roughening the surface of the first semiconductor layer to obtain a first roughened surface, and setting the insulating layer on the surface of the light emitting side of the micro LED structure includes: setting the insulating layer on the first roughened surface.

[0009] Further, the isolation layer includes a plurality of sub-isolation layers, and arranging the isolation layer on the surface of the light-emitting side of the micro-LED structure includes: arranging the plurality of sub-isolation layers in sequence from bottom to top on the surface of the light-emitting side of the micro-LED structure, wherein each of the plurality of sub-isolation layers has a preset thickness and a preset refractive index, the total thickness of the plurality of sub-isolation layers is equal to half of the wavelength of light emitted by the micro-LED unit, and the preset refractive index of each of the plurality of sub-isolation layers decreases in the order of the plurality of sub-isolation layers from bottom to top.

[0010] Further, providing a reflective material layer on the surface of the isolation column includes: providing a reflective material layer on the top and sidewall of the isolation column and performing surface roughening treatment on the reflective material layer on the sidewall of the isolation column to obtain a second roughened surface.

[0011] Furthermore, the reflective material layer includes a metal layer, and arranging the reflective material layer on the top and side walls of the isolation column and performing surface roughening treatment on the reflective material layer on the side walls of the isolation column includes: depositing a metal layer of a preset thickness on the top and side walls of the isolation column so that the grains of the metal layer on the side walls of the isolation column have a lateral growth tendency; and annealing the metal layer so that a plurality of protrusions are formed on the surface of the metal layer on the side walls of the isolation column.

[0012] Furthermore, when the first protective layer is provided on the reflective material layer, the method further includes: providing the first protective layer on the exposed insulating layer. The insulating layer includes a plurality of sub-insulating layers, and the plurality of sub-insulating layers are sequentially provided from bottom to top on the surface of the light-emitting side of the micro-LED structure, wherein the plurality of sub-insulating layers and the first protective layer on the plurality of sub-insulating layers each have a preset thickness and a preset refractive index, the total thickness of the plurality of sub-insulating layers is equal to one-fourth of the wavelength of the light emitted by the micro-LED unit, the preset thickness of the first protective layer on the plurality of sub-insulating layers is equal to one-fourth of the wavelength of the light emitted by the micro-LED unit, and the preset refractive index of each of the plurality of sub-insulating layers and the first protective layer on the plurality of sub-insulating layers decreases in the order of the plurality of sub-insulating layers and the first protective layer on the plurality of sub-insulating layers from bottom to top.

[0013] Furthermore, the preset value is greater than or equal to 1.

[0014] Furthermore, the accommodating space array includes multiple groups of accommodating spaces, each group of accommodating spaces includes a first subspace, a second subspace and a third subspace, and filling quantum dots in the accommodating space array includes at least one of the following: filling green quantum dots in each first subspace; filling red quantum dots in each second subspace.

[0015] Furthermore, after filling quantum dots in the accommodating space array to form a quantum dot array, the method further comprises: providing an encapsulation layer on the quantum dot array and the isolation structure.

[0016] Further, the encapsulation layer includes a first sub-encapsulation layer, and arranging the encapsulation layer on the quantum dot array and the isolation structure includes: arranging the first sub-encapsulation layer on the quantum dot array and the isolation structure; the first sub-encapsulation layer includes a second passivation layer and a filter film, and arranging the first sub-encapsulation layer on the quantum dot array and the isolation structure includes: arranging the second passivation layer on the quantum dot array and the isolation structure; arranging the filter film on the second passivation layer.

[0017] Furthermore, the encapsulation layer also includes a second sub-encapsulation layer, and arranging the encapsulation layer on the quantum dot array and the isolation structure also includes: arranging the second sub-encapsulation layer on the first sub-encapsulation layer; the second sub-encapsulation layer includes a microlens array, a sealant and a second protective layer, and arranging the second sub-encapsulation layer on the first sub-encapsulation layer includes: arranging a microlens array corresponding to the quantum dot array on the filter film; arranging a sealant in the gaps of the microlens array; and arranging a second protective layer on the microlens array and the sealant.

[0018] Furthermore, the micro LED structure also includes a driving substrate, and the driving substrate is bonded to the micro LED chip, or the driving substrate is not bonded to the micro LED chip. When the driving substrate is not bonded to the micro LED chip, after filling quantum dots in the accommodating space array to form a quantum dot array, the method also includes: bonding the driving substrate to the micro LED chip.

[0019] Furthermore, the material of the isolation column includes silicon dioxide, the material of the metal layer includes aluminum, the material of the first protective layer includes magnesium fluoride, the material of the refractive material layer includes silicon nitride, and the first semiconductor layer includes an N-GaN layer.

[0020] According to another aspect of the present disclosure, a micro LED device is also provided. The micro LED device includes: a micro LED structure, which includes a micro LED chip, and the micro LED chip includes a micro LED unit array; an isolation structure array, wherein a receiving space is formed between two adjacent isolation structures in the isolation structure array, and all of the receiving spaces constitute a receiving space array, and the receiving space array corresponds to the micro LED unit array, and each isolation structure in the isolation structure array includes: an isolation substructure, which is arranged on the surface of the light-emitting side of the micro LED structure and includes a reflective material layer and a first sub-protective layer arranged on the side wall of the reflective material layer, and the top surface of the isolation substructure includes the top surface of the reflective material layer and the top surface of the first sub-protective layer; a refractive material layer, which is arranged on the top surface of the isolation substructure, and the refractive material layer covers the top surface of the reflective material layer and the top surface of the first sub-protective layer, wherein the difference between the refractive index of the refractive material layer and the refractive index of the first sub-protective layer is greater than a preset value; a quantum dot array, and the quantum dots in the quantum dot array are filled in the receiving spaces in the receiving space array.

[0021] Furthermore, the isolation substructure also includes an isolation column, the top surface of the isolation substructure also includes the top surface of the isolation column, the isolation column is arranged on the surface of the light-emitting side of the micro LED structure, the reflective material layer is arranged on the side wall of the isolation column, and the first sub-protective layer is arranged on the side wall of the reflective material layer.

[0022] Further, the refractive material layer is arranged on and covers the top surface of the isolation column, the top surface of the reflective material layer and the top surface of the first sub-protective layer.

[0023] Furthermore, the micro LED device further comprises an insulating layer, wherein the insulating layer is arranged on the surface of the light emitting side of the micro LED structure, and the isolation column is arranged on the insulating layer.

[0024] Furthermore, each micro LED unit in the micro LED unit array includes a first semiconductor layer on the light emitting side, the first semiconductor layer includes a first roughened surface, and the insulating layer is disposed on the first roughened surface.

[0025] Furthermore, the isolation layer includes a plurality of sub-isolation layers, and the plurality of sub-isolation layers are sequentially arranged from bottom to top on the surface of the light-emitting side of the micro-LED structure, wherein each of the plurality of sub-isolation layers has a preset thickness and a preset refractive index, the total thickness of the plurality of sub-isolation layers is equal to half of the wavelength of light emitted by the micro-LED unit, and the preset refractive index of each of the plurality of sub-isolation layers decreases in order from bottom to top of the plurality of sub-isolation layers.

[0026] Further, the reflective material layer includes a metal layer, the metal layer includes a second roughened surface, and the second roughened surface includes a plurality of protrusions.

[0027] Furthermore, the micro LED device also includes a second sub-protective layer, which is arranged on the insulating layer in each accommodating space, and the second sub-protective layer and the first sub-protective layer are of the same material and integrally constitute the first protective layer, the insulating layer includes a plurality of sub-isolation layers, and the plurality of sub-isolation layers are sequentially arranged from bottom to top on the surface of the light-emitting side of the micro LED structure, wherein the plurality of sub-isolation layers and the second sub-protective layer on the plurality of sub-isolation layers each have a preset thickness and a preset refractive index, the total thickness of the plurality of sub-isolation layers is equal to one-fourth of the wavelength of the light emitted by the micro LED unit, the preset thickness of the second sub-protective layer on the plurality of sub-isolation layers is equal to one-fourth of the wavelength of the light emitted by the micro LED unit, and the preset refractive index of the plurality of sub-isolation layers and the second sub-protective layer on the plurality of sub-isolation layers decreases in the order of the plurality of sub-isolation layers and the second sub-protective layer on the plurality of sub-isolation layers from bottom to top.

[0028] Furthermore, the preset value is greater than or equal to 1.

[0029] Furthermore, the accommodating space array includes multiple groups of accommodating spaces, each group of accommodating spaces includes a first subspace, a second subspace and a third subspace, each first subspace is filled with green quantum dots, and each second subspace is filled with red quantum dots.

[0030] Furthermore, the micro LED device also includes a packaging layer, and the packaging layer is arranged on the quantum dot array and the isolation structure.

[0031] Furthermore, the encapsulation layer includes a first sub-encapsulation layer, which is arranged on the quantum dot array and the isolation structure. The first sub-encapsulation layer includes a second passivation layer and a filter film, and the second passivation layer is arranged on the quantum dot array and the isolation structure; the filter film is arranged on the second passivation layer.

[0032] Furthermore, the encapsulation layer also includes a second sub-encapsulation layer, which is arranged on the first sub-encapsulation layer, and the second sub-encapsulation layer includes a microlens array, a sealant and a second protective layer, the microlens array is arranged on the filter film and corresponds to the quantum dot array, and the sealant is arranged in the gaps of the microlens array; the second protective layer is arranged on the microlens array and the sealant.

[0033] According to another aspect of the embodiments of the present disclosure, a display device is provided, comprising the above-mentioned micro LED device.

[0034] By applying the technical solution disclosed in the present invention, an isolation structure array is arranged on a micro-LED structure, and quantum dots are arranged in the accommodation space between each two adjacent isolation structures, so as to realize direct preparation of a color conversion structure on the micro-LED structure. The isolation structure includes an isolation substructure and a refractive material layer, and the isolation substructure includes a reflective material layer and a first protective layer arranged on the side wall of the reflective material layer. The refractive material layer is arranged on the top surface of the isolation substructure and contacts the top surface of the reflective material layer and the top surface of the first protective layer. Since the difference between the refractive index of the refractive material layer in the isolation structure and the refractive index of the first protective layer is greater than a preset value, the refractive material layer can destroy the waveguide propagation of light in the first protective layer and along the side wall of the reflective material layer, and reflect the light into the quantum dots, thereby increasing the light involved in exciting the quantum dots, thereby improving the utilization rate of light, and thus increasing the light output of the micro-LED device finally formed.

[0035] Furthermore, the reflective material layer can enhance the reflection of light emitted toward the isolation structure, causing the light to be reflected into the quantum dots, thereby increasing the light involved in exciting the quantum dots, thereby improving the utilization of light and reducing the crosstalk of light through the isolation structure to adjacent quantum dots. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] By reading the detailed description below with reference to the accompanying drawings, the above and other purposes, features and advantages of the exemplary embodiments of the present disclosure will become readily understood. In the accompanying drawings, several embodiments of the present disclosure are shown in an exemplary and non-limiting manner, and the same or corresponding reference numerals represent the same or corresponding parts, wherein:

[0037] Figure 1 is a flow chart showing a method for preparing a micro LED device according to one embodiment of the present disclosure;

[0038] Figures 2 to 13 is a schematic diagram showing a preparation process flow of a method for preparing a micro LED device according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0039] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present disclosure will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0040] It should be noted that the following detailed descriptions are illustrative and are intended to provide further explanation of the present application. Unless otherwise specified, all technical and scientific terms used herein have the same meanings as those commonly understood by those skilled in the art to which the present application belongs.

[0041] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used herein to describe the spatial positional relationship between a device or feature and other devices or features as shown in the figure. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figure. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" may include both "above" and "below". The device may also be positioned in other different ways, rotated 90 degrees or in other orientations, and the spatially relative descriptions used herein are interpreted accordingly.

[0042] Now, exemplary embodiments according to the present disclosure will be described in more detail with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in a variety of different forms and should not be construed as being limited to the embodiments described herein. It should be understood that these embodiments are provided to make the disclosure of the present application thorough and complete, and to fully convey the concepts of these exemplary embodiments to those of ordinary skill in the art. In the accompanying drawings, for clarity, the thickness of the layers and regions is enlarged, and the same reference numerals are used to represent the same devices, and thus their descriptions will be omitted.

[0043] The present invention provides a method for preparing a micro LED device. Figures 1 to 13 , Figure 1 is a flow chart showing a method for preparing a micro LED device according to one embodiment of the present disclosure; Figures 2 to 13 is a schematic diagram showing a preparation process flow of a method for preparing a micro LED device according to an embodiment of the present disclosure.

[0044] According to embodiments of the present disclosure, the pixel size in the micro LED device is typically less than 50 microns.

[0045] like Figure 1 As shown, the method for preparing a micro LED device includes the following steps S101-S104.

[0046] Step S101: Acquire a micro LED structure, wherein the micro LED structure includes a micro LED chip, and the micro LED chip includes a micro LED unit array.

[0047] Step S102: An isolation substructure array is arranged on the surface of the light-emitting side of the micro-LED structure, wherein each isolation substructure in the isolation substructure array includes a reflective material layer and a first protective layer arranged on the side wall of the reflective material layer, and the top surface of the isolation substructure includes the top surface of the reflective material layer and the top surface of the first protective layer.

[0048] Step S103: a refractive material layer is arranged on the top surface of each of the isolation substructures, so that the refractive material layer covers the top surface of the reflective material layer and the top surface of the first protective layer, wherein each of the isolation substructures and the corresponding refractive material layer form an isolation structure, all of the isolation structures constitute an isolation structure array, and a receiving space is formed between two adjacent isolation structures, all of the receiving spaces constitute an receiving space array, and the receiving space array corresponds to the micro LED unit array, wherein the difference between the refractive index of the refractive material layer and the refractive index of the first protective layer is greater than a preset value.

[0049] Step S104: filling quantum dots in the accommodating space array to form a quantum dot array to obtain the micro LED device.

[0050] According to the technical solution, by arranging an isolation structure array on the micro LED structure and arranging quantum dots in the accommodation space between each two adjacent isolation structures, a color conversion structure is directly prepared on the micro LED structure. The isolation structure includes an isolation substructure and a refractive material layer, the isolation substructure includes a reflective material layer and a first protective layer arranged on the side wall of the reflective material layer, and the refractive material layer is arranged on the top surface of the isolation substructure and contacts the top surface of the reflective material layer and the top surface of the first protective layer. Since the difference between the refractive index of the refractive material layer in the isolation structure and the refractive index of the first protective layer is greater than a preset value, the refractive material layer can destroy the waveguide propagation of light in the first protective layer and along the side wall of the reflective material layer, and reflect the light into the quantum dot, thereby increasing the light participating in the excitation of the quantum dot, thereby improving the utilization rate of light, and thus increasing the light output of the micro LED device finally formed. Furthermore, the reflective material layer can enhance the reflection of the light emitted toward the isolation structure, so that the light is reflected into the quantum dot, thereby increasing the light participating in the excitation of the quantum dot, thereby improving the utilization rate of light and reducing the crosstalk of light to adjacent quantum dots through the isolation structure.

[0051] In step S101 , a micro LED structure may be obtained, wherein the micro LED structure includes a micro LED chip, and the micro LED chip includes a micro LED unit array.

[0052] According to the embodiments of the present disclosure, a micro LED structure for emitting light can be first obtained. The micro LED structure can include a micro LED chip, which can include a micro LED unit array, which can be any micro LED unit array suitable for preparing a micro LED device, for example, the structure of the micro LED unit array can include a front-mounted structure, a flip-chip structure or a vertical structure, etc., which is not limited here. The micro LED structure can also include a driving substrate, which can be bonded to the micro LED chip, or the driving substrate can be not bonded to the micro LED chip. When the driving substrate and the micro LED chip are bonded together, a color conversion structure can be prepared on the micro LED structure including the bonded driving substrate and the micro LED chip. When the driving substrate and the micro LED chip are not bonded together, after filling quantum dots in the accommodating space array to form a quantum dot array, the method can also include: bonding the driving substrate to the micro LED chip.

[0053] Reference Figure 2-Figure 13 ,in Figure 2 FIG. 1 shows a side view of a micro LED structure 10 according to one embodiment of the present disclosure. Figure 2 As shown, the micro LED structure 10 includes a driving substrate 102 and a micro LED chip 101 bonded to the driving substrate 102. The micro LED chip 101 includes a micro LED unit array composed of micro LED units 1011. It is worth noting that for the sake of simplicity and clarity, Figure 2 Only three micro LED units 1011 are schematically shown, and the number of micro LED units can be determined according to actual needs and is not limited here.

[0054] In step S102, an isolation substructure array can be set on the surface of the light-emitting side of the micro LED structure, wherein each isolation substructure in the isolation substructure array includes a reflective material layer and a first protective layer arranged on the side wall of the reflective material layer, and the top surface of the isolation substructure includes the top surface of the reflective material layer and the top surface of the first protective layer.

[0055] According to an embodiment of the present disclosure, each isolation substructure in the isolation substructure array further includes an isolation column, and the top surface of the isolation substructure further includes the top surface of the isolation column. Arranging the isolation substructure array on the surface of the light-emitting side of the micro-LED structure includes: arranging a first passivation layer having a through-hole array on the surface of the light-emitting side of the micro-LED structure, so that each through-hole in the through-hole array exposes a preset exposed portion of the surface of the light-emitting side of the micro-LED structure and corresponds to the micro-LED unit in the micro-LED unit array, and the isolation column is formed between two adjacent through-holes; arranging a reflective material layer on the surface of the isolation column; arranging a first protective layer on the reflective material layer; removing the reflective material layer and the first protective layer above the top of the isolation column, exposing the top surface of the isolation column, the top surface of the reflective material layer, and the top surface of the first protective layer. Wherein, the material of the first passivation layer may include silicon dioxide, so the material of the isolation column includes silicon dioxide, and of course, the material of the first passivation layer may also include any other applicable material.

[0056] According to an embodiment of the present disclosure, before a first passivation layer having a through-hole array is provided on the surface of the light-emitting side of the micro-LED structure, the method may further include: providing an insulating layer on the surface of the light-emitting side of the micro-LED structure so as to protect the micro-LED structure when other layers or structures are provided on the micro-LED structure. And providing a first passivation layer having a through-hole array on the surface of the light-emitting side of the micro-LED structure so that each through-hole in the through-hole array exposes a preset exposed portion of the surface of the light-emitting side of the micro-LED structure and corresponds to a micro-LED unit in the micro-LED unit array, and forming an isolation column between two adjacent through-holes may include: providing a first passivation layer on the isolation layer, and opening a through-hole array on the first passivation layer so that each through-hole in the through-hole array exposes a preset exposed portion of the isolation layer and corresponds to a micro-LED unit in the micro-LED unit array, and forming an isolation column between two adjacent through-holes.

[0057] Furthermore, each micro LED unit in the micro LED unit array includes a first semiconductor layer on the light emitting side, and before setting the insulating layer on the surface of the light emitting side of the micro LED structure, the method may further include: roughening the surface of the first semiconductor layer to obtain a first roughened surface. And setting the insulating layer on the surface of the light emitting side of the micro LED structure may include: setting the insulating layer on the first roughened surface. The first semiconductor layer may be, for example, an N-GaN layer, and of course, a P-GaN layer. Since the first roughened surface of the first semiconductor layer of the micro LED unit is the light emitting surface of the micro LED unit, the roughening of the light emitting surface can destroy the total reflection condition of the light on the surface, thereby reducing the reflection of light toward the inside of the micro LED chip, and further increasing the emission of light.

[0058] According to an embodiment of the present disclosure, the insulating layer may include a plurality of sub-insulating layers, and the insulating layer may be arranged on the surface of the light-emitting side of the micro-LED structure, including: the plurality of sub-insulating layers are arranged sequentially from bottom to top on the surface of the light-emitting side of the micro-LED structure, wherein the plurality of sub-insulating layers each have a preset thickness and a preset refractive index, the total thickness of the plurality of sub-insulating layers is equal to half of the wavelength of the light emitted by the micro-LED unit, and the preset refractive index of each of the plurality of sub-insulating layers decreases in the order from bottom to top of the plurality of sub-insulating layers. The plurality of sub-insulating layers arranged in this way make the refractive index of each insulating layer gradually decrease from bottom to top, thereby reducing the Fresnel loss of light, and more light can pass through the insulating layer. At the same time, since the total thickness of the plurality of sub-insulating layers is equal to half of the wavelength of the light emitted by the micro-LED unit, the total thickness satisfies the optical anti-reflection thickness, thereby further increasing the light passing through the insulating layer. With respect to the preset thickness and preset refractive index of each of the plurality of sub-insulating layers, the corresponding material can be selected according to the preset refractive index of each sub-insulating layer, and the thickness of each sub-insulating layer can be pre-set according to the total thickness of the insulating layer actually required.

[0059] Reference Figure 2-Figure 13 ,in Figure 3 FIG. 2 shows a side view of an insulating layer 201 disposed on a micro LED structure 10 according to an embodiment of the present disclosure. Figure 3As shown, each micro LED unit 1011 in the micro LED unit array may include a first semiconductor layer such as an N-GaN layer on the light emitting side, and the surface of the first semiconductor layer is a light emitting surface. The surface of the first semiconductor layer may be roughened by dry etching or wet etching to obtain a first roughened surface 10111, and then a chemical vapor deposition (CVD) method may be used to deposit an isolation layer 201 on the first roughened surface 10111. Specifically, the isolation layer 201 may include a plurality of sub-isolation layers, so for example, a tantalum pentoxide (Ta2O5) layer, a yttrium trioxide (Y2O3) layer and a silicon dioxide layer may be sequentially deposited from bottom to top on the first roughened surface 10111 as three sub-isolation layers, the sum of the thicknesses of the three sub-isolation layers is equal to half of the wavelength of the light emitted by the micro LED unit 1011, and the refractive indices of the three sub-isolation layers decrease in order from bottom to top.

[0060] Reference Figure 2-Figure 13 ,in Figure 4 FIG. 2 shows a side view of an isolation column 202 disposed on an isolation layer 201 according to an embodiment of the present disclosure. Figure 4 As shown, a silicon dioxide layer, for example, can be deposited on the isolation layer 201 by chemical vapor deposition (CVD) as a first passivation layer, and then, for example, a through hole array consisting of through holes 2021 can be opened on the first passivation layer by photolithography and etching technology, so that each through hole 2021 in the through hole array exposes a preset exposed portion of the isolation layer 201 and corresponds to the micro LED unit 1011 in the micro LED unit array, and an isolation column 202 is formed between two adjacent through holes 2021, that is, the portion remaining after the first passivation layer is photolithographically and etched is the isolation column 202.

[0061] According to an embodiment of the present disclosure, after forming the isolation column, a reflective material layer may be disposed on the surface of the isolation column. Compared with the material of the passivation layer, the reflective material layer is more likely to reflect light toward the reflective material layer.

[0062] Further, providing a reflective material layer on the surface of the isolation column may include: providing a reflective material layer on the top and sidewall of the isolation column and performing a surface roughening treatment on the reflective material layer on the sidewall of the isolation column to obtain a second roughened surface. The second roughened surface can destroy the propagation of light along the reflective material layer, so that more light is reflected.

[0063] Specifically, the reflective material layer may include any applicable material layer such as a metal layer. Providing the reflective material layer on the top and sidewalls of the isolation column and performing surface roughening treatment on the reflective material layer on the sidewalls of the isolation column may include: depositing a metal layer of a preset thickness on the top and sidewalls of the isolation column so that the grains of the metal layer on the sidewalls of the isolation column have a lateral growth tendency; and performing annealing treatment on the metal layer so that a plurality of protrusions are formed on the surface of the metal layer on the sidewalls of the isolation column. The material of the metal layer may include any applicable metal such as aluminum.

[0064] Reference Figure 2-Figure 13 ,in Figure 5 FIG. 2 shows a side view of a reflective material layer 203 disposed on a spacer column 202 according to an embodiment of the present disclosure. Figure 5 As shown, the pattern of the reflective material layer 203 can be formed by photolithography using a photoresist, and then the reflective material layer 203 such as an aluminum layer is deposited on the isolation column 202 such as a silicon dioxide material by a physical vapor deposition (PVD) method and the reflective material layer 203 is annealed to obtain the following Figure 5 The structure shown. When the reflective material layer 203 such as an aluminum layer is deposited, the reflective material layer 203 has a preset thickness, that is, the reflective material layer 203 can be a thin layer on the isolation column 202 such as silicon dioxide according to process requirements, so that the lattice direction of the reflective material layer 203 such as an aluminum layer on the side wall of the isolation column 202 such as silicon dioxide changes from the traditional vertical direction to the horizontal direction, so that the grains of the reflective material layer 203 such as an aluminum layer on the side wall of the isolation column 202 such as silicon dioxide have a lateral growth trend, and then the reflective material layer 203 is annealed, so that the grain stress of the reflective material layer 203 such as an aluminum layer is released along the lattice direction, so that a plurality of protrusions are formed on the surface of the reflective material layer 203 on the side wall of the isolation column 202, thereby forming a second roughened surface 2031 of the reflective material layer 203.

[0065] According to an embodiment of the present disclosure, after the reflective material layer is provided, a first protective layer may be provided on the reflective material layer. The material of the first protective layer may include magnesium fluoride. The first protective layer provided on the reflective material layer may protect the reflective material layer from damage by subsequent processes.

[0066] According to an embodiment of the present disclosure, when the first protective layer is provided on the reflective material layer, the method further includes: providing the first protective layer on the exposed insulating layer. The insulating layer may include a plurality of sub-insulating layers, and the plurality of sub-insulating layers are sequentially provided from bottom to top on the surface of the light-emitting side of the micro-LED structure, wherein the plurality of sub-insulating layers and the first protective layer on the plurality of sub-insulating layers each have a preset thickness and a preset refractive index, the total thickness of the plurality of sub-insulating layers is equal to one-fourth of the wavelength of the light emitted by the micro-LED unit, the preset thickness of the first protective layer on the plurality of sub-insulating layers is equal to one-fourth of the wavelength of the light emitted by the micro-LED unit, and the preset refractive index of each of the plurality of sub-insulating layers and the first protective layer on the plurality of sub-insulating layers decreases in the order of the plurality of sub-insulating layers and the first protective layer on the plurality of sub-insulating layers from bottom to top. The multiple sub-isolation layers and the first protective layer on the multiple sub-isolation layers are arranged in this way, so that the refractive index of each isolation layer and the first protective layer on the isolation layer gradually decreases from bottom to top, thereby reducing the Fresnel loss of light, and more light can pass through the isolation layer and the first protective layer. At the same time, since the total thickness of the multiple sub-isolation layers and the first protective layer on the multiple sub-isolation layers is equal to half of the wavelength of the light emitted by the micro LED unit, the total thickness satisfies the optical transmittance enhancement thickness, thereby further increasing the light passing through the isolation layer. Regarding the preset thickness and preset refractive index of each of the multiple sub-isolation layers, the corresponding material can be selected according to the preset refractive index of each sub-isolation layer, and the thickness of each sub-isolation layer can be pre-set according to the total thickness of the isolation layer actually required.

[0067] Reference Figure 2-Figure 13 ,in Figure 6 FIG. 2 shows a side view of a first protective layer 204 disposed on a reflective material layer 203 according to an embodiment of the present disclosure. Figure 6 As shown, a first protective layer 204 such as magnesium fluoride can be deposited on the reflective material layer 203 and the exposed insulating layer 201 by chemical vapor deposition (CVD). Specifically, the insulating layer 201 can include a plurality of sub-insulating layers, so for example, a tantalum pentoxide (Ta2O5) layer, a yttrium trioxide (Y2O3) layer and a silicon dioxide layer can be deposited in sequence from bottom to top on the surface of the light-emitting side of the micro LED structure 10 as three sub-insulating layers, the sum of the thicknesses of the three sub-insulating layers is equal to one-fourth of the wavelength of the light emitted by the micro LED unit 1011, the thickness of the first protective layer such as magnesium fluoride on the three sub-insulating layers is equal to one-fourth of the wavelength of the light emitted by the micro LED unit 1011, and the refractive indexes of the three sub-insulating layers and the first protective layer on the three sub-insulating layers decrease in order from bottom to top.

[0068] According to an embodiment of the present disclosure, after providing the first protective layer, the reflective material layer and the first protective layer above the top of the isolation column can be removed to expose the top surface of the isolation column, the top surface of the reflective material layer and the top surface of the first protective layer.

[0069] Reference Figure 2-Figure 13 ,in Figure 7 FIG. 2 shows a side view of the exposed top surface 2024 of the isolation column, the top surface 2034 of the reflective material layer, and the top surface 2044 of the first protective layer according to an embodiment of the present disclosure. Figure 7 As shown, the reflective material layer such as aluminum and the first protective layer above the top of the isolation column 202 are removed by photolithography and lift-off processes until the top surface 2024 of the isolation column is exposed. At this time, the reflective material layer such as aluminum 203 has an exposed top surface 2034, and the first protective layer 204 has an exposed top surface 2044.

[0070] In step S103, a refractive material layer can be arranged on the top surface of each of the isolation substructures, so that the refractive material layer covers the top surface of the reflective material layer and the top surface of the first protective layer, wherein each of the isolation substructures and the corresponding refractive material layer form an isolation structure, all of the isolation structures constitute an isolation structure array, and a accommodating space is formed between two adjacent isolation structures, all of the accommodating spaces constitute an accommodating space array, and the accommodating space array corresponds to the micro LED unit array, wherein the difference between the refractive index of the refractive material layer and the refractive index of the first protective layer is greater than a preset value.

[0071] According to an embodiment of the present disclosure, as described in step S102, each of the isolation substructures in the isolation substructure array further includes an isolation column, and the top surface of the isolation substructure further includes the top surface of the isolation column. Therefore, arranging a refractive material layer on the top surface of each of the isolation substructures so that the refractive material layer covers the top surface of the reflective material layer and the top surface of the first protective layer may include: arranging a refractive material layer on the top surface of each of the isolation substructures so that the refractive material layer covers the top surface of the isolation column, the top surface of the reflective material layer, and the top surface of the first protective layer.

[0072] In this embodiment, the refractive material layer covers and contacts the top surface of the isolation column, the top surface of the reflective material layer and the top surface of the first protective layer. The isolation column, the reflective material layer on the isolation column, the first protective layer on the isolation column and the refractive material layer constitute an isolation structure, and a receiving space is formed between every two adjacent isolation structures, thereby obtaining an array of receiving spaces. It is worth noting that the difference between the refractive index of the refractive material layer and the refractive index of the first protective layer is greater than a preset value, which can be determined according to actual applications. Preferably, the preset value is greater than or equal to 1. The difference between the refractive index of the refractive material layer and the refractive index of the first protective layer can destroy the waveguide propagation of light along the side wall of the reflective material layer in the first protective layer, and enhance the reflection of light into the quantum point. The greater the difference between the refractive index of the refractive material layer and the refractive index of the first protective layer, the more obvious the effect. Therefore, the material of the refractive material layer may include silicon nitride, and of course, any other applicable material.

[0073] Reference Figure 2-Figure 13 ,in Figure 8 FIG. 2 shows a side view of a refractive material layer 205 disposed on the exposed top surface 2024 of the isolation column, the top surface 2034 of the reflective material layer, and the top surface 2044 of the first protective layer according to an embodiment of the present disclosure. Figure 8 As shown, a refractive material layer 205 such as a silicon nitride layer can be deposited on the exposed top surface 2024 of the isolation column, the top surface 2034 of the reflective material layer, and the top surface 2044 of the first protective layer by plasma enhanced chemical vapor deposition (PECVD), and the refractive material layer 205 covers the top surface 2024 of the isolation column, the top surface 2034 of the reflective material layer, and the top surface 2044 of the first protective layer.

[0074] like Figure 8 As shown, the isolation column 202, the reflective material layer 203 on the isolation column, the first protective layer 204 on the isolation column and the refractive material layer 205 can form an isolation structure 20, and form a accommodating space between two adjacent isolation structures 20, so that all the accommodating spaces can constitute an accommodating space array 2040.

[0075] In step S104, quantum dots may be filled in the receiving space array to form a quantum dot array to obtain the micro LED device.

[0076] According to an embodiment of the present disclosure, after obtaining the above-mentioned accommodation space array, quantum dots may be filled in the accommodation space array.

[0077] Further, the accommodating space array includes multiple groups of accommodating spaces, each group of accommodating spaces includes a first subspace, a second subspace, and a third subspace, and filling quantum dots in the accommodating space array includes at least one of the following: filling green quantum dots in each first subspace; filling red quantum dots in each second subspace. In some embodiments, blue quantum dots can be filled in each third subhole; in other embodiments, the micro LED unit array emits blue light, and transparent material or no material can be filled in each third subhole.

[0078] Reference Figure 2-Figure 13 ,in Fig. 9 FIG. 2 shows a side view schematic diagram of green quantum dots 2061 and red quantum dots 2062 filled in the receiving space array 2040. Figure 8 , for the sake of brevity and clarity, Figure 8 Only one group of accommodation spaces in the accommodation space array 2040 is shown, and the group of accommodation spaces includes a first subspace 2041, a second subspace 2042, and a third subspace 2043. It should be understood that the number of groups of accommodation spaces can be determined according to actual applications and is not limited here. Figure 8 ,like Fig. 9 As shown, green quantum dots 2061 are filled into the first subspace 2041 in the accommodating space array 2040, and the green quantum dots are group II-VI quantum dots, and then UV curing is performed. And red quantum dots 2062 are filled into the second subspace 2042 in the accommodating space array 2040, and the red quantum dots are group II-VI quantum dots, and then UV curing is performed to obtain the following: Fig. 9 The structure shown. Fig. 9 In the illustrated embodiment, the micro LED unit array emits blue light, and the third subspace 2043 is not filled with any material.

[0079] According to an embodiment of the present disclosure, after filling quantum dots in the accommodating space array to form a quantum dot array, the method may further include: setting an encapsulation layer on the quantum dot array and the isolation structure to encapsulate the quantum dot array and the isolation structure.

[0080] Further, the encapsulation layer may include a first sub-encapsulation layer, and setting the encapsulation layer on the quantum dot array and the isolation structure may include: setting the first sub-encapsulation layer on the quantum dot array and the isolation structure; the first sub-encapsulation layer includes a second passivation layer and a filter film, and setting the first sub-encapsulation layer on the quantum dot array and the isolation structure may include: setting the second passivation layer on the quantum dot array and the isolation structure; and setting the filter film on the second passivation layer.

[0081] Furthermore, the encapsulation layer may also include a second sub-encapsulation layer, and arranging the encapsulation layer on the quantum dot array and the isolation structure may also include: arranging the second sub-encapsulation layer on the first sub-encapsulation layer; the second sub-encapsulation layer includes a microlens array, a sealant and a second protective layer, and arranging the second sub-encapsulation layer on the first sub-encapsulation layer may include: arranging a microlens array corresponding to the quantum dot array on the filter film; arranging a sealant in the gaps of the microlens array; and arranging a second protective layer on the microlens array and the sealant.

[0082] Reference Figure 2-Figure 13 ,in Fig.10 FIG. 2 shows a side view schematic diagram of a second passivation layer 207 and a filter film 208 disposed on the quantum dot array 2040 and the isolation structure 20. Fig.10 As shown, an atomic layer deposition method (ALD) can be used to deposit a second passivation layer 207 on the quantum dot array 2040 and the isolation structure 20. The material of the second passivation layer 207 can be, for example, aluminum oxide or silicon dioxide. The second passivation layer 207 can protect the quantum dots from water vapor intrusion, thereby increasing the service life of the quantum dots. Then, an optical coating device can be used to coat a filter film 208 on the second passivation layer 207. For example, in the case where the second passivation layer 207 is an aluminum oxide layer, the filter film 208 can be, for example, a silicon dioxide layer, and the thickness of the silicon dioxide layer is equal to one quarter of the wavelength of the light emitted by the micro LED unit. For example, when the micro LED unit emits blue light to excite the green quantum dots 2061 and the red quantum dots 2062, the filter film 208 can enhance the reflection of the blue light, but does not affect the green light emitted by the blue light exciting the green quantum dots and the red light emitted by the blue light exciting the red quantum dots. That is, a part of the blue light directly from the third subspace 2043 can be returned to the third subspace 2043, thereby weakening the blue light emitted through the third subspace 2043, and reflecting the blue light emitted from the green quantum dots 2061 and the red quantum dots 2062 back to the quantum dots, thereby increasing the blue light used to excite the quantum dots, and then increasing the emitted green and red light. Therefore, the filter film 208 makes the emitted red, green and blue light have correct colors, thereby achieving better color gamut and brightness.

[0083] Reference Figure 2-Figure 13 ,in Fig.11 FIG. 2 shows a side view schematic diagram of a microlens array composed of microlenses 209 arranged on the filter film 208. Fig.11 As shown, a plastic sealant may be disposed at a position of the filter film 208 corresponding to the quantum dot array, and the plastic sealant may be heated to make it reflow to form a microlens 209. The microlens 209 may converge light entering the microlens 209 and increase light transmission.

[0084] Reference Figure 2-Figure 13 ,in Fig.12 FIG. 2 shows a schematic side view of a sealant 210 disposed in the gaps of the microlens array. Fig.12 As shown, a sealant 211 can be provided in the gaps of the microlens array by photolithography, and the sealant 211 can include, for example, photoresist, and of course, any other applicable material. The sealant 211 has a preset thickness, so the sealant 211 can cover a preset portion of the microlens 210, so that the sealant 211 uses a full-enclosed manner to suppress large-angle light that may cause optical crosstalk and is emitted from a preset portion of the side of the microlens 211.

[0085] Reference Figure 2-Figure 13 ,in Fig.13 FIG. 2 shows a side view schematic diagram of a second protective layer 211 disposed on the microlens array and the sealant 210. Fig.13 As shown, a second protective layer 211 can be deposited on the microlens array and the sealant 210 by chemical vapor deposition. The second protective layer 211 can include, for example, magnesium fluoride, or any other suitable material. The second protective layer 211 is used to protect the microlens array and the sealant 210. Fig.12 The overall structure shown is protected from damage.

[0086] Thus, the micro LED device is prepared. Fig.13 A micro LED device 1 is shown that has been manufactured according to an embodiment of the present disclosure.

[0087] The present disclosure also provides a micro LED device.

[0088] like Figure 2-Figure 13As shown, the micro LED device 1 comprises: a micro LED structure 10, wherein the micro LED structure 10 comprises a micro LED chip 101, wherein the micro LED chip 101 comprises a micro LED unit array; an isolation structure array, wherein a receiving space is formed between two adjacent isolation structures 20 in the isolation structure array, wherein all of the receiving spaces constitute an receiving space array 2040, wherein the receiving space array 2040 corresponds to the micro LED unit array constituted by the micro LED units 1011, and each isolation structure 20 in the isolation structure array comprises: an isolation substructure, which is arranged on the surface of the light emitting side of the micro LED structure and comprises a reflective material layer 203 and a reflective material layer arranged on the reflective material layer. A first sub-protective layer 204 on the side wall of the material layer 203, the top surface of the isolation substructure includes the top surface 2034 of the reflective material layer 203 and the top surface 2044 of the first sub-protective layer 2045; a refractive material layer 205, which is arranged on the top surface of the isolation substructure, and the refractive material layer 205 covers the top surface 2034 of the reflective material layer 203 and the top surface 2044 of the first sub-protective layer 2045, wherein the difference between the refractive index of the refractive material layer 205 and the refractive index of the first sub-protective layer 2045 is greater than a preset value; a quantum dot array, the quantum dots in the quantum dot array are filled in the accommodation space in the accommodation space array 2040.

[0089] According to an embodiment of the present disclosure, the isolation substructure also includes an isolation column 202, the top surface of the isolation substructure also includes a top surface 2024 of the isolation column 202, the isolation column 202 is arranged on the surface of the light-emitting side of the micro-LED structure, the reflective material layer 203 is arranged on the side wall of the isolation column 202, and the first sub-protective layer 2045 is arranged on the side wall of the reflective material layer 203.

[0090] According to an embodiment of the present disclosure, the refractive material layer 205 is arranged on the top surface 2024 of the isolation column 202, the top surface 2034 of the reflective material layer 203 and the top surface 2044 of the first sub-protective layer 2045 and covers the top surface 2024 of the isolation column 202, the top surface 2034 of the reflective material layer 203 and the top surface 2044 of the first sub-protective layer 2045.

[0091] According to an embodiment of the present disclosure, the micro LED device 1 further includes an insulating layer 201 , which is disposed on a surface of the light-emitting side of the micro LED structure, and the isolation column 202 is disposed on the insulating layer 201 .

[0092] According to an embodiment of the present disclosure, each micro LED unit 1011 in the micro LED unit array includes a first semiconductor layer on the light emitting side, the first semiconductor layer includes a first roughened surface 10111 , and the insulating layer 201 is disposed on the first roughened surface 10111 .

[0093] According to an embodiment of the present disclosure, the isolation layer 201 includes a plurality of sub-isolation layers, and the plurality of sub-isolation layers are sequentially arranged from bottom to top on the surface of the light-emitting side of the micro-LED structure 10, wherein the plurality of sub-isolation layers each have a preset thickness and a preset refractive index, the total thickness of the plurality of sub-isolation layers is equal to half of the wavelength of the light emitted by the micro-LED unit 1011, and the preset refractive index of each of the plurality of sub-isolation layers decreases in order from bottom to top of the plurality of sub-isolation layers.

[0094] According to an embodiment of the present disclosure, the reflective material layer 203 includes a metal layer, the metal layer includes a second roughened surface 2031 , and the second roughened surface 2031 includes a plurality of protrusions.

[0095] According to an embodiment of the present disclosure, the micro LED device 1 further includes a second sub-protective layer 2046, which is disposed on the insulating layer 201 in each accommodating space, and the second sub-protective layer 2046 and the first sub-protective layer 2045 are made of the same material and integrally constitute the first protective layer 204, the insulating layer 201 includes a plurality of sub-isolation layers, and the plurality of sub-isolation layers are sequentially disposed from bottom to top on the surface of the light-emitting side of the micro LED structure 10, wherein the plurality of sub-isolation layers and the second sub-protective layer 2046 on the plurality of sub-isolation layers are 046 each have a preset thickness and a preset refractive index, the total thickness of the multiple sub-isolating layers is equal to one quarter of the wavelength of the light emitted by the micro LED unit 1011, the preset thickness of the second sub-protective layer 2046 on the multiple sub-isolating layers is equal to one quarter of the wavelength of the light emitted by the micro LED unit 1011, and the preset refractive index of the multiple sub-isolating layers and the second sub-protective layer 2046 on the multiple sub-isolating layers decreases in the bottom-up order of the multiple sub-isolating layers and the second sub-protective layer 2046 on the multiple sub-isolating layers.

[0096] According to an embodiment of the present disclosure, the preset value is greater than or equal to 1.

[0097] According to an embodiment of the present disclosure, the accommodating space array 2040 includes multiple groups of accommodating spaces, each group of accommodating spaces includes a first subspace 2041, a second subspace 2042 and a third subspace 2043, each first subspace 2041 is filled with green quantum dots 2061, and each second subspace 2042 is filled with red quantum dots 2062.

[0098] According to an embodiment of the present disclosure, the micro LED device 1 further includes a packaging layer, and the packaging layer is disposed on the quantum dot array and the isolation structure 20 .

[0099] According to an embodiment of the present disclosure, the encapsulation layer includes a first sub-encapsulation layer, which is arranged on the quantum dot array and the isolation structure 20, and the first sub-encapsulation layer includes a second passivation layer 207 and a filter film 208, and the second passivation layer 207 is arranged on the quantum dot array and the isolation structure 20; the filter film 208 is arranged on the second passivation layer 207.

[0100] According to an embodiment of the present disclosure, the encapsulation layer also includes a second sub-encapsulation layer, which is arranged on the first sub-encapsulation layer, and the second sub-encapsulation layer includes a microlens array composed of microlenses 209, a sealant 210 and a second protective layer 211. The microlens array is arranged on the filter film 208 and corresponds to the quantum dot array, and the sealant 210 is arranged in the gaps of the microlens array; the second protective layer 211 is arranged on the microlens array and the sealant 210.

[0101] It is worth noting that any relevant description about the micro LED device in the above-mentioned micro LED device preparation method (including but not limited to technical features and their functions, explanations, etc.) can be applied to the micro LED device disclosed in the present invention.

[0102] The present disclosure also provides a display device, which includes the micro LED device 1 described above.

[0103] The micro LED device can be applied to flexible electronic devices to realize technologies such as augmented reality (AR), virtual reality (VR), extended reality (XR), and mixed reality (MR). For example, the micro LED device can be the projection part of an electronic device, such as a projector, a head-up display (HUD), etc.; for another example, the micro LED device can also be the display part of an electronic device, such as a smart phone, a smart watch, a laptop, a tablet computer, a driving recorder, a navigation system, a head-mounted device, and any other device with a display screen.

[0104] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, it indicates the presence of features, steps, operations, devices, components and / or combinations thereof.

[0105] It should be understood that "one embodiment" or "an embodiment" mentioned throughout the specification means that specific features, structures or characteristics related to the embodiment are included in at least one embodiment of the present application. Therefore, "in one embodiment" or "in an embodiment" appearing throughout the specification does not necessarily refer to the same embodiment. In addition, these specific features, structures or characteristics can be combined in one or more embodiments in any suitable manner. It should be understood that in various embodiments of the present application, the size of the serial number of each step / process mentioned above does not mean the order of execution, and the execution order of each step / process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiment of the present application. In addition, the serial numbers of the embodiments of the present application mentioned above are only for description and do not represent the advantages and disadvantages of the embodiments.

[0106] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein, for example. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0107] The above description is only a preferred embodiment of the present disclosure and is not intended to limit the present disclosure. For those skilled in the art, the present disclosure may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present disclosure shall be included in the protection scope of the present disclosure.

Claims

1. A method for preparing a micro LED device, wherein: The method comprises: Obtain a micro LED structure, wherein the micro LED structure includes a micro LED chip, and the micro LED chip includes a micro LED unit array; An array of isolating substructures is disposed on the surface of the light-emitting side of the micro-LED structure, wherein each isolating substructure in the array of isolating substructures comprises a reflective material layer and a first protective layer disposed on the sidewall of the reflective material layer, and a top surface of the isolating substructure comprises a top surface of the reflective material layer and a top surface of the first protective layer; A refractive material layer is disposed on the top surface of each of the isolation substructures, so that the refractive material layer covers the top surface of the reflective material layer and the top surface of the first protective layer, wherein each of the isolation substructures and the corresponding refractive material layer form an isolation structure, all of the isolation structures constitute an isolation structure array, and a receiving space is formed between two adjacent isolation structures, all of the receiving spaces constitute an receiving space array, and the receiving space array corresponds to the micro LED unit array, wherein the difference between the refractive index of the refractive material layer and the refractive index of the first protective layer is greater than a preset value; The quantum dots are filled in the containing space array to form a quantum dot array, thereby obtaining the micro LED device.

2. The method for preparing a micro LED device according to claim 1, wherein: Each of the isolation substructures in the isolation substructure array further includes an isolation column, and the top surface of the isolation substructure further includes the top surface of the isolation column. The isolation substructure array is arranged on the surface of the light-emitting side of the micro LED structure, including: A first passivation layer having a through hole array is provided on the surface of the light-emitting side of the micro LED structure, so that each through hole in the through hole array exposes a preset exposed portion of the surface of the light-emitting side of the micro LED structure and corresponds to a micro LED unit in the micro LED unit array, and the isolation column is formed between two adjacent through holes; Disposing a reflective material layer on the surface of the isolation column; Disposing a first protective layer on the reflective material layer; The reflective material layer and the first protective layer above the top of the isolation column are removed to expose the top surface of the isolation column, the top surface of the reflective material layer and the top surface of the first protective layer.

3. The method for preparing a micro LED device according to claim 2, wherein: Disposing a refractive material layer on the top surface of each of the isolation substructures so that the refractive material layer covers the top surface of the reflective material layer and the top surface of the first protective layer comprises: A refractive material layer is disposed on the top surface of each of the isolation substructures, so that the refractive material layer covers the top surface of the isolation column, the top surface of the reflective material layer, and the top surface of the first protection layer.

4. The method for preparing a micro LED device according to claim 2, wherein: Before providing a first passivation layer having a through-hole array on the surface of the light-emitting side of the micro LED structure, the method further includes: providing an isolation layer on the surface of the light-emitting side of the micro LED structure, A first passivation layer having an array of through holes is arranged on the surface of the light-emitting side of the micro LED structure, so that each through hole in the through hole array exposes a preset exposed portion of the surface of the light-emitting side of the micro LED structure and corresponds to the micro LED unit in the micro LED unit array, and an isolation column is formed between two adjacent through holes, including: a first passivation layer is arranged on the insulating layer, and an array of through holes is opened on the first passivation layer, so that each through hole in the through hole array exposes a preset exposed portion of the insulating layer and corresponds to the micro LED unit in the micro LED unit array, and an isolation column is formed between two adjacent through holes.

5. The method for preparing a micro LED device according to claim 4, wherein: Each micro LED unit in the micro LED unit array includes a first semiconductor layer on the light emitting side. Before providing an insulating layer on the surface of the light emitting side of the micro LED structure, the method further includes: roughening the surface of the first semiconductor layer to obtain a first roughened surface. Providing an insulating layer on the surface of the light-emitting side of the micro LED structure includes: providing an insulating layer on the first roughened surface.

6. The method for preparing a micro LED device according to claim 4, wherein: The insulating layer includes a plurality of sub-insulating layers, and the insulating layer is provided on the surface of the light-emitting side of the micro-LED structure, including: The multiple sub-isolating layers are sequentially arranged from bottom to top on the surface of the light-emitting side of the micro-LED structure, wherein each of the multiple sub-isolating layers has a preset thickness and a preset refractive index, the total thickness of the multiple sub-isolating layers is equal to half of the wavelength of light emitted by the micro-LED unit, and the preset refractive index of each of the multiple sub-isolating layers decreases in order from bottom to top.

7. The method for preparing a micro LED device according to claim 2, wherein: Providing a reflective material layer on the surface of the isolation column comprises: A reflective material layer is disposed on the top and side wall of the isolation column and a surface roughening treatment is performed on the reflective material layer on the side wall of the isolation column to obtain a second roughened surface.

8. The method for preparing a micro LED device according to claim 7, wherein: The reflective material layer includes a metal layer, and the reflective material layer is disposed on the top and the side wall of the isolation column and the reflective material layer on the side wall of the isolation column is subjected to surface roughening treatment, comprising: Depositing a metal layer of a preset thickness on the top and sidewalls of the isolation column so that the grains of the metal layer on the sidewalls of the isolation column have a lateral growth tendency; The metal layer is annealed to form a plurality of protrusions on the surface of the metal layer on the side wall of the isolation column.

9. The method for preparing a micro LED device according to claim 4, wherein: When the first protective layer is provided on the reflective material layer, the method further comprises: disposing the first protective layer on the exposed insulating layer, The isolation layer includes a plurality of sub-isolation layers, which are arranged in sequence from bottom to top on the surface of the light-emitting side of the micro-LED structure, wherein the plurality of sub-isolation layers and the first protective layer on the plurality of sub-isolation layers each have a preset thickness and a preset refractive index, the total thickness of the plurality of sub-isolation layers is equal to one-fourth of the wavelength of light emitted by the micro-LED unit, the preset thickness of the first protective layer on the plurality of sub-isolation layers is equal to one-fourth of the wavelength of light emitted by the micro-LED unit, and the preset refractive indexes of the plurality of sub-isolation layers and the first protective layer on the plurality of sub-isolation layers decrease in the order of the plurality of sub-isolation layers and the first protective layer on the plurality of sub-isolation layers from bottom to top.

10. The method for preparing a micro LED device according to claim 1, wherein: The preset value is greater than or equal to 1.

11. The method for preparing a micro LED device according to claim 1, wherein: The accommodating space array includes a plurality of groups of accommodating spaces, each group of accommodating spaces includes a first subspace, a second subspace, and a third subspace, and filling quantum dots in the accommodating space array includes at least one of the following: Fill each first subspace with green quantum dots; Fill each second subspace with red quantum dots.

12. The method for preparing a micro LED device according to claim 1, wherein: After filling quantum dots in the receiving space array to form a quantum dot array, the method further includes: providing a packaging layer on the quantum dot array and the isolation structure.

13. The method for preparing a micro LED device according to claim 12, wherein: The encapsulation layer includes a first sub-encapsulation layer, and providing the encapsulation layer on the quantum dot array and the isolation structure includes: providing the first sub-encapsulation layer on the quantum dot array and the isolation structure; The first sub-packaging layer includes a second passivation layer and a filter film. Arranging the first sub-packaging layer on the quantum dot array and the isolation structure includes: arranging the second passivation layer on the quantum dot array and the isolation structure; and arranging the filter film on the second passivation layer.

14. The method for preparing a micro LED device according to claim 13, wherein: The encapsulation layer further includes a second sub-encapsulation layer, and providing the encapsulation layer on the quantum dot array and the isolation structure further includes: providing the second sub-encapsulation layer on the first sub-encapsulation layer; The second sub-packaging layer includes a microlens array, a sealant and a second protective layer. Arranging the second sub-packaging layer on the first sub-packaging layer includes: arranging a microlens array corresponding to the quantum dot array on the filter film; arranging a sealant in the gaps of the microlens array; and arranging a second protective layer on the microlens array and the sealant.

15. The method for preparing a micro LED device according to claim 1, wherein: The micro LED structure also includes a driving substrate, and the driving substrate is bonded to the micro LED chip, or the driving substrate is not bonded to the micro LED chip. When the driving substrate is not bonded to the micro LED chip, after quantum dots are filled in the accommodating space array to form a quantum dot array, the method also includes: bonding the driving substrate to the micro LED chip.

16. The method for preparing a micro LED device according to claim 8, wherein: The material of the isolation column includes silicon dioxide, the material of the metal layer includes aluminum, the material of the first protection layer includes magnesium fluoride, and the material of the refractive material layer includes silicon nitride.

17. A micro LED device, wherein: The micro LED device comprises: A micro LED structure comprising a micro LED chip, wherein the micro LED chip comprises a micro LED unit array; An isolation structure array, wherein an accommodation space is formed between two adjacent isolation structures in the isolation structure array, and all of the accommodation spaces constitute an accommodation space array, and the accommodation space array corresponds to the micro LED unit array, and each isolation structure in the isolation structure array comprises: an isolation substructure, which is arranged on the surface of the light-emitting side of the micro LED structure and comprises a reflective material layer and a first sub-protective layer arranged on the side wall of the reflective material layer, and the top surface of the isolation substructure comprises the top surface of the reflective material layer and the top surface of the first sub-protective layer; a refractive material layer, which is arranged on the top surface of the isolation substructure, and the refractive material layer covers the top surface of the reflective material layer and the top surface of the first sub-protective layer, wherein the difference between the refractive index of the refractive material layer and the refractive index of the first sub-protective layer is greater than a preset value; A quantum dot array, wherein quantum dots in the quantum dot array are filled in the accommodation spaces in the accommodation space array.

18. The micro LED device according to claim 17, wherein: The isolation substructure also includes an isolation column, the top surface of the isolation substructure also includes the top surface of the isolation column, the isolation column is arranged on the surface of the light-emitting side of the micro LED structure, the reflective material layer is arranged on the side wall of the isolation column, and the first sub-protective layer is arranged on the side wall of the reflective material layer.

19. The micro LED device according to claim 18, wherein: The refractive material layer is disposed on and covers the top surfaces of the isolation column, the reflective material layer, and the first sub-protecting layer.

20. The micro LED device according to claim 18, wherein: The micro LED device further includes an insulating layer, which is disposed on a surface of a light-emitting side of the micro LED structure, and the isolation column is disposed on the insulating layer.

21. The micro LED device according to claim 20, wherein: Each micro LED unit in the micro LED unit array includes a first semiconductor layer on a light emitting side, the first semiconductor layer includes a first roughened surface, and the insulating layer is disposed on the first roughened surface.

22. The micro LED device according to claim 20, wherein: The isolation layer includes a plurality of sub-isolation layers, and the plurality of sub-isolation layers are sequentially arranged from bottom to top on the surface of the light-emitting side of the micro-LED structure, wherein each of the plurality of sub-isolation layers has a preset thickness and a preset refractive index, the total thickness of the plurality of sub-isolation layers is equal to half of the wavelength of light emitted by the micro-LED unit, and the preset refractive index of each of the plurality of sub-isolation layers decreases in order from bottom to top of the plurality of sub-isolation layers.

23. The micro LED device according to claim 18, wherein: The reflective material layer includes a metal layer, the metal layer includes a second roughened surface, and the second roughened surface includes a plurality of protrusions.

24. The micro LED device according to claim 20, wherein: The micro LED device further includes a second sub-protection layer, which is disposed on the insulating layer in each accommodation space, and the second sub-protection layer and the first sub-protection layer are made of the same material and integrally constitute the first protection layer. The isolation layer includes a plurality of sub-isolation layers, and the plurality of sub-isolation layers are sequentially arranged from bottom to top on the surface of the light-emitting side of the micro-LED structure, wherein the plurality of sub-isolation layers and the second sub-protective layer on the plurality of sub-isolation layers each have a preset thickness and a preset refractive index, the total thickness of the plurality of sub-isolation layers is equal to one-fourth of the wavelength of light emitted by the micro-LED unit, the preset thickness of the second sub-protective layer on the plurality of sub-isolation layers is equal to one-fourth of the wavelength of light emitted by the micro-LED unit, and the preset refractive index of the plurality of sub-isolation layers and the second sub-protective layer on the plurality of sub-isolation layers decreases in the bottom-up order of the plurality of sub-isolation layers and the second sub-protective layer on the plurality of sub-isolation layers.

25. The micro LED device according to claim 17, wherein: The preset value is greater than or equal to 1.

26. The micro LED device according to claim 17, wherein: The accommodating space array includes multiple groups of accommodating spaces, each group of accommodating spaces includes a first subspace, a second subspace and a third subspace, each first subspace is filled with green quantum dots, and each second subspace is filled with red quantum dots.

27. The micro LED device according to claim 17, wherein: The micro LED device further includes a packaging layer disposed on the quantum dot array and the isolation structure.

28. The micro LED device according to claim 27, wherein: The encapsulation layer includes a first sub-encapsulation layer, which is arranged on the quantum dot array and the isolation structure. The first sub-encapsulation layer includes a second passivation layer and a filter film, and the second passivation layer is arranged on the quantum dot array and the isolation structure; the filter film is arranged on the second passivation layer.

29. The micro LED device according to claim 28, wherein: The encapsulation layer also includes a second sub-encapsulation layer, which is arranged on the first sub-encapsulation layer. The second sub-encapsulation layer includes a microlens array, a sealant and a second protective layer. The microlens array is arranged on the filter film and corresponds to the quantum dot array. The sealant is arranged in the gaps of the microlens array; the second protective layer is arranged on the microlens array and the sealant.

30. A display device, wherein: The display device comprises the micro LED device according to any one of claims 17 to 29.

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