Manufacturing method for filling holes in glass substrate by using conductive copper paste

Abstract

The invention discloses a manufacturing method for filling holes in a glass substrate by using conductive copper paste, which comprises the following steps of: taking the glass substrate as a base material layer, and generating through holes through a glass drilling process; generating a copper seed layer on the surface of the base material layer and the inner wall of the through hole by using PVD equipment; depositing copper atoms on the copper seed layer by using a copper electroplating process, and increasing the thickness of the copper seed layer on the surface of the base material layer and the inner wall of the through hole; filling conductive copper paste in the through hole by using a vacuum hole plugging process; flattening the copper seed layer on the surface of the base material layer and the protruding conductive copper paste by using CMP (Chemical Mechanical Polishing) equipment in a chemical micro-etching and mechanical grinding mode; and manufacturing a circuit pattern layer on the surface of the base material layer through a circuit layer reduction method. The conductive copper paste is plugged into the through hole through the vacuum hole plugging equipment to be used for manufacturing the conductive hole or the heat dissipation hole, and compared with an electroplating hole filling operation mode, the vacuum hole plugging equipment can be applied to the through holes of different shapes and sizes.

Description

Technical Field

[0001] The invention belongs to the technical field of glass substrate hole opening, and in particular relates to a manufacturing method of filling holes on a glass substrate by using a conductive copper paste. Background Art

[0002] Glass substrate is a thin glass sheet with an extremely flat surface and is one of the key basic materials in the flat panel display industry.

[0003] In the production process of glass substrates, it is necessary to make conductive holes or heat dissipation holes on the glass substrate according to the design requirements. In the prior art, holes are generally opened on the glass substrate by laser, and then filled by electroplating. There are some problems in the actual operation process. For example, electroplating filling has great restrictions on the size and shape of the opening. In addition, the production process of electroplating filling is long, resulting in high production costs. Summary of the invention

[0004] The purpose of the present invention is to provide a method for filling holes on a glass substrate using a conductive copper paste to solve the problems raised in the above background technology. The method for filling holes on a glass substrate using a conductive copper paste provided by the present invention has the characteristics of being applicable to a variety of hole shapes and sizes.

[0005] To achieve the above object, the present invention provides the following technical solution: a method for filling holes on a glass substrate using a conductive copper paste, comprising the following steps:

[0006] (1) Making through holes: Taking a glass substrate as a base material layer, a through hole is produced by a glass drilling process;

[0007] (ii) Making a copper seed layer: using PVD equipment to generate a copper seed layer on the surface of the substrate layer and the inner wall of the through hole;

[0008] (iii) increasing the thickness of the copper seed layer: using the copper electroplating process to deposit copper atoms on the copper seed layer, thereby increasing the thickness of the copper seed layer on the surface of the substrate layer and the inner wall of the through hole;

[0009] (iv) Filling with conductive copper paste: Using vacuum plugging process, fill the through hole with conductive copper paste;

[0010] (V) Surface planarization: Use CMP equipment to planarize the copper seed layer on the surface of the substrate layer and the protruding conductive copper paste by chemical microetching and mechanical grinding;

[0011] (VI) Making a circuit graphic layer: Making a circuit graphic layer on the surface of the substrate layer by a circuit layer reduction method.

[0012] In the present invention, further, in step (1), the method for making the through hole comprises the following steps:

[0013] (A1), generating tiny holes in the substrate layer by a high-energy laser beam, and modifying the substrate layer around the holes;

[0014] (A2) In the modified area of ​​the base material layer, HF, KOH and NaOH are used for etching to enlarge the diameter of the micro-holes and form through-holes.

[0015] In the present invention, further, in step (ii), the method for making the copper seed layer comprises the following steps:

[0016] (B1) Using chemical cleaning methods to remove grease and dust from the surface of the substrate layer and the through holes;

[0017] (B2), placing the cleaned substrate layer into the vacuum chamber of the PVD equipment and performing a vacuum operation;

[0018] (B3) The target material is evaporated into gas-phase atoms by electron beam, and a copper seed layer is generated on the surface of the substrate layer and in the through-hole by magnetron sputtering.

[0019] In the present invention, further, in step (iii), the method for increasing the thickness of the copper seed layer comprises the following steps:

[0020] (C1), hanging the substrate layer on a jig and immersing it in a copper sulfate solution;

[0021] (C2) When current is passed through the fixture, copper ions in the copper sulfate solution are deposited on the surface of the substrate layer and the copper seed layer in the through hole, thereby increasing the thickness of the copper seed layer.

[0022] In the present invention, further, in step (iv), the method of filling the conductive copper paste comprises the following steps:

[0023] (D1) Use chemical cleaning to remove grease and dust from the surface of the substrate layer and the through-holes;

[0024] (D2), placing the cleaned substrate layer into the vacuum chamber of the vacuum plugging equipment, and performing a vacuum operation;

[0025] (D3) Use a hanging knife to fill the conductive copper paste into the through hole;

[0026] (D4) Use an oven to remove volatiles from the conductive copper paste.

[0027] In the present invention, further, in step (v), the surface planarization method comprises the following steps:

[0028] (E1), fixing the substrate layer under the polishing head, and placing the polishing pad on the grinding disc;

[0029] (E2), the polishing head is pressed on the polishing pad, and a grinding liquid is added between the surface of the substrate layer and the polishing pad to polish the surface of the substrate layer;

[0030] (E3) Use chemical cleaning methods to remove particles, impurities and dust on the surface of the substrate layer.

[0031] In the present invention, further, in step (six), the method for making the circuit pattern layer comprises the following steps:

[0032] (F1) using chemical micro-etching to remove grease and dust on the surface of the substrate layer, and to create a certain degree of roughness on the copper seed layer on the surface of the substrate layer;

[0033] (F2), attaching a photosensitive dry film to the surface of the substrate layer;

[0034] (F3) Use UV exposure machine to produce circuit patterns on dry film;

[0035] (F4) The pattern on the dry film is transferred to the copper seed layer on the surface of the substrate layer by developing, etching and stripping, thereby forming a circuit pattern layer on the surface of the substrate layer.

[0036] Compared with the prior art, the present invention has the following beneficial effects:

[0037] 1. The present invention uses a vacuum plugging device to plug the conductive copper paste into the through hole to make a conductive hole or a heat dissipation hole. Compared with the electroplating hole filling operation, it can be used for through holes of different shapes and sizes;

[0038] 2. The present invention has little restriction on the shape and size of the through hole, which effectively shortens the process time and reduces the production cost;

[0039] 3. After the hole filling operation is completed, the present invention uses a CMP process to improve the flatness of the surface of the glass substrate, thereby effectively preventing cracks from occurring on the glass substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Figure 1 It is a structural schematic diagram of step (1) of the present invention;

[0041] Figure 2 It is a structural schematic diagram of step (ii) of the present invention;

[0042] Figure 3 It is a structural schematic diagram of step (three) of the present invention;

[0043] Figure 4 It is a structural schematic diagram of step (four) of the present invention;

[0044] Figure 5It is a structural schematic diagram of step (five) of the present invention;

[0045] Figure 6 It is a structural schematic diagram of step (six) of the present invention;

[0046] In the figure: 1. substrate layer; 2. through hole; 3. copper seed layer; 4. conductive copper paste. DETAILED DESCRIPTION

[0047] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0048] Example 1

[0049] See also Figure 1-6 The present invention provides the following technical solution: A method for filling holes on a glass substrate using a conductive copper paste, comprising the following steps:

[0050] (i) Making a through hole 2: Taking a glass substrate as the base material layer 1, a through hole 2 is produced by a glass drilling process;

[0051] (ii) Making a copper seed layer 3: using a PVD device to form a copper seed layer 3 on the surface of the substrate layer 1 and the inner wall of the through hole 2;

[0052] (iii) increasing the thickness of the copper seed layer 3: using a copper electroplating process to deposit copper atoms on the copper seed layer 3, thereby increasing the thickness of the copper seed layer 3 on the surface of the substrate layer 1 and the inner wall of the through hole 2;

[0053] (iv) Filling the conductive copper paste 4: Using a vacuum plugging process, the conductive copper paste 4 is filled into the through hole 2;

[0054] (V) Surface planarization: Using CMP equipment, the copper seed layer 3 on the surface of the substrate layer 1 and the protruding conductive copper paste 4 are planarized by chemical microetching and mechanical grinding;

[0055] (VI) Making a circuit pattern layer: Making a circuit pattern layer on the surface of the substrate layer 1 by a circuit layer reduction method.

[0056] Example 2

[0057] The difference between this embodiment and embodiment 1 is that: specifically, in step (1), the method for making the through hole 2 includes the following steps:

[0058] (A1), generating tiny holes on the substrate layer 1 by a high-energy laser beam, and modifying the substrate layer 1 around the holes;

[0059] (A2) The modified region of the base material layer 1 is etched using HF, KOH and NaOH to enlarge the diameter of the micro-holes and form the through-holes 2.

[0060] Example 3

[0061] The difference between this embodiment and embodiment 1 is that: specifically, in step (ii), the method for making the copper seed layer 3 includes the following steps:

[0062] (B1) using a chemical cleaning method to remove grease and dust from the surface of the substrate layer 1 and the through hole 2;

[0063] (B2), placing the cleaned substrate layer 1 into the vacuum chamber of the PVD equipment and performing a vacuum operation;

[0064] (B3) The target material is evaporated into gas-phase atoms by electron beam, and a copper seed layer 3 is generated on the surface of the substrate layer 1 and in the through hole 2 by magnetron sputtering.

[0065] Example 4

[0066] The difference between this embodiment and embodiment 1 is that: specifically, in step (iii), the method for increasing the thickness of the copper seed layer 3 includes the following steps:

[0067] (C1), hanging the substrate layer 1 on a jig and immersing it in a copper sulfate solution;

[0068] (C2) When current is passed through the fixture, copper ions in the copper sulfate solution are deposited on the surface of the substrate layer 1 and the copper seed layer 3 in the through hole 2, thereby increasing the thickness of the copper seed layer 3.

[0069] Example 5

[0070] The difference between this embodiment and embodiment 1 is that: specifically, in step (iv), the method of filling the conductive copper paste 4 includes the following steps:

[0071] (D1) using a chemical cleaning method to remove grease and dust from the surface of the substrate layer 1 and the through hole 2;

[0072] (D2), placing the cleaned substrate layer 1 into the vacuum chamber of the vacuum plugging equipment, and performing a vacuum operation;

[0073] (D3), using a hanging knife, fill the conductive copper paste 4 into the through hole 2;

[0074] (D4), using an oven to remove volatiles from the conductive copper paste 4.

[0075] Example 6

[0076] The difference between this embodiment and embodiment 1 is that: specifically, in step (v), the surface planarization method includes the following steps:

[0077] (E1), fixing the substrate layer 1 under the polishing head, and placing the polishing pad on the grinding disc;

[0078] (E2), the polishing head is pressed on the polishing pad, and a grinding liquid is added between the surface of the substrate layer 1 and the polishing pad to polish the surface of the substrate layer 1;

[0079] (E3) Using a chemical cleaning method, remove particles, impurities and dust on the surface of the substrate layer 1.

[0080] Example 7

[0081] The difference between this embodiment and embodiment 1 is that: specifically, in step (six), the method for making the circuit pattern layer includes the following steps:

[0082] (F1), using a chemical micro-etching method to remove grease and dust on the surface of the substrate layer 1, and to produce a certain degree of roughness on the copper seed layer 3 on the surface of the substrate layer 1;

[0083] (F2), attaching a photosensitive dry film to the surface of the substrate layer 1;

[0084] (F3) Use UV exposure machine to produce circuit patterns on dry film;

[0085] (F4) The pattern on the dry film is transferred to the copper seed layer 3 on the surface of the substrate layer 1 by developing, etching and stripping, so as to form a circuit pattern layer on the surface of the substrate layer 1.

[0086] In summary, the present invention plugs the conductive copper paste 4 into the through hole 2 through the vacuum plugging equipment to make a conductive hole or a heat dissipation hole. Compared with the electroplating hole filling operation, it can be used for through holes 2 of different shapes and sizes; the present invention has little restriction on the shape and size of the through hole 2, effectively shortens the process time, and reduces the production cost; after the hole filling operation is completed, the present invention uses a CMP process to improve the flatness of the glass substrate surface, thereby effectively avoiding cracks in the glass substrate.

[0087] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A method for filling holes on a glass substrate using a conductive copper paste, characterized in that: The following steps are involved: (1) Making through holes: Taking a glass substrate as a base material layer, a through hole is produced by a glass drilling process; (ii) Making a copper seed layer: using PVD equipment to generate a copper seed layer on the surface of the substrate layer and the inner wall of the through hole; (iii) increasing the thickness of the copper seed layer: using the copper electroplating process to deposit copper atoms on the copper seed layer, thereby increasing the thickness of the copper seed layer on the surface of the substrate layer and the inner wall of the through hole; (iv) Filling with conductive copper paste: Using vacuum plugging process, fill the through hole with conductive copper paste; (V) Surface planarization: Use CMP equipment to planarize the copper seed layer on the surface of the substrate layer and the protruding conductive copper paste by chemical microetching and mechanical grinding; (VI) Making a circuit graphic layer: Making a circuit graphic layer on the surface of the substrate layer by a circuit layer reduction method.

2. The method for filling holes on a glass substrate using a conductive copper paste according to claim 1, characterized in that: In the step (a), the method for making a through hole comprises the following steps: (A1), generating tiny holes in the substrate layer by a high-energy laser beam, and modifying the substrate layer around the holes; (A2) In the modified area of ​​the base material layer, HF, KOH and NaOH are used for etching to enlarge the diameter of the micro-holes and form through-holes.

3. The method for filling holes on a glass substrate using a conductive copper paste according to claim 1, characterized in that: In the step (ii), the method for making the copper seed layer comprises the following steps: (B1) Using chemical cleaning methods to remove grease and dust from the surface of the substrate layer and the through holes; (B2), placing the cleaned substrate layer into the vacuum chamber of the PVD equipment and performing a vacuum operation; (B3) The target material is evaporated into gas-phase atoms by electron beam, and a copper seed layer is generated on the surface of the substrate layer and in the through-hole by magnetron sputtering.

4. The method for filling holes on a glass substrate using a conductive copper paste according to claim 1, characterized in that: In the step (iii), the method for increasing the thickness of the copper seed layer comprises the following steps: (C1), hanging the substrate layer on a jig and immersing it in a copper sulfate solution; (C2) When current is passed through the fixture, copper ions in the copper sulfate solution are deposited on the surface of the substrate layer and the copper seed layer in the through hole, thereby increasing the thickness of the copper seed layer.

5. The method for filling holes on a glass substrate using a conductive copper paste according to claim 1, characterized in that: In the step (iv), the method of filling the conductive copper paste comprises the following steps: (D1) Use chemical cleaning to remove grease and dust from the surface of the substrate layer and the through-holes; (D2), placing the cleaned substrate layer into the vacuum chamber of the vacuum plugging equipment, and performing a vacuum operation; (D3) Use a hanging knife to fill the conductive copper paste into the through hole; (D4) Use an oven to remove volatiles from the conductive copper paste.

6. The method for filling holes on a glass substrate using a conductive copper paste according to claim 1, characterized in that: In the step (v), the surface planarization method comprises the following steps: (E1), fixing the substrate layer under the polishing head, and placing the polishing pad on the grinding disc; (E2), the polishing head is pressed on the polishing pad, and a grinding liquid is added between the surface of the substrate layer and the polishing pad to polish the surface of the substrate layer; (E3) Use chemical cleaning methods to remove particles, impurities and dust on the surface of the substrate layer.

7. The method for filling holes on a glass substrate using a conductive copper paste according to claim 1, characterized in that: In the step (six), the method for making the circuit pattern layer comprises the following steps: (F1) using chemical micro-etching to remove grease and dust on the surface of the substrate layer, and to create a certain degree of roughness on the copper seed layer on the surface of the substrate layer; (F2), attaching a photosensitive dry film to the surface of the substrate layer; (F3) Use UV exposure machine to produce circuit patterns on dry film; (F4) The pattern on the dry film is transferred to the copper seed layer on the surface of the substrate layer by developing, etching and stripping, thereby forming a circuit pattern layer on the surface of the substrate layer.

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