Preparation method of PTFE-based copper-clad plate and application of PTFE-based copper-clad plate

Abstract

The invention relates to a preparation method of a PTFE-based copper-clad plate and application of the PTFE-based copper-clad plate, in particular to the field of preparation of high-frequency and high-speed copper-clad plates, and the preparation method comprises the following steps: sequentially carrying out plasma surface treatment, metal film plating and copper layer plating on a copper-clad surface of PTFE to obtain the PTFE-based copper-clad plate; the film layer obtained by plating the metal film comprises one or a combination of at least two of a copper film, a nickel film and a gold film. According to the preparation method provided by the invention, the surface of the PTFE film is activated by adopting a plasma surface treatment process, then the binding force of the copper plating layer and PTFE is improved by depositing the metal thin layer on the surface and matching with activation, and meanwhile, the PTFE-based copper-clad plate obtained after the copper plating layer is plated still has good dielectric properties.

Description

Technical Field

[0001] The invention relates to the field of high-frequency and high-speed copper-clad laminate preparation, and in particular to a preparation method of a PTFE-based copper-clad laminate and uses of the PTFE-based copper-clad laminate. Background Art

[0002] At present, with the development of high-frequency communications, the quality requirements for copper clad laminates are getting higher and higher. Polytetrafluoroethylene (PTFE) has very excellent dielectric properties and is widely used in high-frequency and high-speed copper clad laminates.

[0003] The conventional method of PTFE-based copper-clad laminate is to press the PTFE semi-cured sheet with the copper foil. The adhesion between the copper foil and PTFE obtained by this process is poor, which is easy to cause falling off or bubbling during the PCB processing, thus affecting the application of high-frequency PCB.

[0004] For example, CN108684151A discloses a PTFE-based PCB copper-clad laminate and a copper-clad method, in which a layer of metal (metal titanium or nickel) film is deposited on a PTFE semi-cured sheet by electron beam evaporation, and then the sheet is placed between two copper foils for pressing and copper-cladding. This process improves the adhesion between PTFE and copper foil, but will lead to a decrease in the dielectric properties of the copper-clad laminate.

[0005] CN117341319A discloses a low-dielectric PTFE high-frequency copper-clad laminate and a preparation method thereof. The preparation method comprises the following steps: S1, dispersing ultrafine short glass fibers, silica gel and starch in deionized water, mixing them evenly and filtering them through a mold to form a fiber felt wet blank, and drying the fiber felt wet blank at 120°C to obtain a glass fiber felt; S2, desizing the glass fiber felt obtained in step S1 for 20-60 minutes to obtain a pretreated glass fiber felt; S3, stacking a PTFE membrane and the pretreated glass fiber felt obtained in step S2 alternately up and down, that is, a pretreated glass fiber felt obtained in step S2 is arranged between two adjacent PTFE membranes, and a PTFE membrane is arranged between two adjacent pretreated glass fiber felts obtained in step S2, and the uppermost and lowermost membranes are both PTFE membranes, and then a copper foil is coated on the surface of the uppermost PTFE membrane to obtain a laminated sheet; S4, placing the laminated sheet obtained in step S3 in a high-temperature press, and pressing at 350-400°C for 5-12 hours to obtain a low-dielectric PTFE high-frequency copper-clad laminate.

[0006] In summary, when copper-cladding PTFE, there is still a defect that the copper layer bonding performance and dielectric performance cannot be improved simultaneously. Summary of the invention

[0007] In view of the problems existing in the prior art, the purpose of the present invention is to provide a method for preparing a PTFE-based copper-clad laminate and a use of the PTFE-based copper-clad laminate, so as to solve the defect that the copper layer bonding performance and dielectric properties cannot be improved synchronously when copper is coated on PTFE.

[0008] To achieve this object, the present invention adopts the following technical solutions:

[0009] In a first aspect, the present invention provides a method for preparing a PTFE-based copper-clad laminate, the preparation method comprising:

[0010] The copper-clad surface of the PTFE is sequentially subjected to plasma surface treatment, metal film coating and copper coating to obtain a PTFE-based copper-clad laminate;

[0011] The film layer obtained by plating the metal film includes one of copper film, nickel film or gold film, or a combination of at least two of them.

[0012] The preparation method provided by the present invention uses a plasma surface treatment process to activate the surface of the PTFE film, and then deposits a thin metal layer on the surface to cooperate with the activation phase to achieve an improvement in the bonding strength between the copper plating layer and the PTFE, while ensuring that the PTFE-based copper-clad laminate obtained after the copper plating layer still has good dielectric properties.

[0013] As a preferred technical solution of the present invention, the thickness of the PTFE is 10-200 μm.

[0014] As a preferred technical solution of the present invention, the gas used in the plasma surface treatment includes one or a combination of at least two of H2, NH3, Ar, O2 or CF4.

[0015] Preferably, the gas used in the plasma surface treatment includes H2, CF4 and O2 in a volume ratio of (1-2.5):1:1.

[0016] Preferably, the flow rate of the gas used in the plasma surface treatment is 30-80 mL / min.

[0017] As a preferred technical solution of the present invention, the power of the plasma surface treatment is 200-2000W.

[0018] Preferably, the absolute vacuum degree of the plasma surface treatment is ≤1×10 -6 Pa.

[0019] Preferably, the temperature of the plasma surface treatment is 80-300°C.

[0020] As a preferred technical solution of the present invention, the time of the plasma surface treatment is 5-60 minutes.

[0021] As a preferred technical solution of the present invention, the method of coating the metal film includes physical vapor deposition.

[0022] Preferably, the deposition power of the metallized film is 5-60 kW.

[0023] Preferably, the temperature of the metallized film is 200-400°C.

[0024] Preferably, the absolute vacuum degree of the metallized film is ≤1×10 -3 Pa.

[0025] As a preferred technical solution of the present invention, the thickness of the film layer obtained by the metal plating is 100-400nm.

[0026] As a preferred technical solution of the present invention, the copper plating method includes chemical copper plating or electrolytic copper plating.

[0027] Preferably, the operating pH value of the electroplated copper layer is 1-3.

[0028] Preferably, the current density of the electroplated copper layer is 1.9-2.3A / dm 2 .

[0029] Preferably, the temperature of the electroplated copper layer is 20-25°C.

[0030] As a preferred technical solution of the present invention, the thickness of the copper layer obtained by the copper plating layer is 3-35 μm.

[0031] In a second aspect, the present invention provides a use of a PTFE-based copper-clad laminate obtained by the preparation method described in the first aspect, and the use includes: using the PTFE-based copper-clad laminate as a raw material in the high-frequency and high-speed field.

[0032] Compared with the prior art solutions, the present invention has the following beneficial effects:

[0033] (1) The preparation method provided by the present invention has the advantages of being simple and environmentally friendly. The thickness uniformity of the obtained copper-clad laminate is good, and the PTFE-based copper-clad laminate can achieve high peel strength while maintaining ultra-low dielectric constant and dielectric loss performance.

[0034] (2) Plasma treatment of PTFE film can effectively enhance its surface activity and greatly improve the bonding strength between PTFE film and copper foil. Its peel strength is much greater than that of conventional sodium ammonia and sodium naphthalene surface treatment processes. Among them, plasma treatment breaks the CF bond of PTFE and connects the CO bond and -OH bond. After that, vacuum coating treatment can form chemical bonds (OX, X is nickel, copper, gold) between the metal molecules of the film layer and the surface of the plasma-treated PTFE film, thereby greatly improving the bonding performance between the PTFE film and the copper foil. At the same time, combined with physical vapor deposition and electroplating processes, thin copper layers of different thicknesses can be developed, which is conducive to the development of ultra-thin high-frequency and high-speed copper-clad laminates. DETAILED DESCRIPTION

[0035] To better illustrate the present invention and facilitate understanding of the technical solution of the present invention, typical but non-limiting embodiments of the present invention are as follows:

[0036] This embodiment provides a method for preparing a PTFE-based copper-clad laminate, the preparation method comprising:

[0037] The copper-clad surface of the PTFE is sequentially subjected to plasma surface treatment, metal film coating and copper coating to obtain a PTFE-based copper-clad laminate;

[0038] The film layer obtained by plating the metal film includes one of copper film, nickel film or gold film, or a combination of at least two of them.

[0039] Specifically, the thickness of the PTFE is 10-200 μm, for example, it can be 10 μm, 20 μm, 40 μm, 60 μm, 80 μm, 100 μm, 120 μm, 140 μm, 160 μm, 180 μm or 200 μm, but is not limited to the listed values, and other unlisted values ​​within the range also meet the requirements.

[0040] In the present invention, before each treatment of PTFE, the surface can be cleaned to remove residual agents, stains and other impurities that affect the product. Specifically, water washing, alcohol washing and other cleaning processes can be selected.

[0041] In the present invention, the PTFE material used is the original PTFE material or the modified PTFE material, which does not affect the realization of the effect of the present invention. For example, the modification of PTFE to improve the corresponding dielectric properties or adhesion properties does not affect the improvement of the dielectric properties and adhesion properties of the PTFE material body after being treated by the method of the present invention.

[0042] Specifically, the gas used in the plasma surface treatment includes one or a combination of at least two of H2, NH3, Ar, O2 or CF4.

[0043] Exemplarily, the combination of gases used in the plasma surface treatment may be selected as: a combination of H2, NH3 and Ar, a combination of NH3, Ar and O2, a combination of Ar, O2 and CF4, etc., a combination of H2, NH3, Ar and O2, etc.

[0044] In the present invention, when the gas used in the plasma surface treatment includes H2, CF4 and O2 in a volume ratio of (1-2.5):1:1, the plasma surface treatment effect can be significantly improved, the bonding effect can be significantly improved, and at the same time, it can further ensure that the obtained product has good dielectric properties.

[0045] Specifically, the flow rate of the gas used in the plasma surface treatment is 30-80 mL / min, for example, it can be 30 mL / min, 40 mL / min, 50 mL / min, 60 mL / min, 70 mL / min or 80 mL / min, but is not limited to the listed values, and other unlisted values ​​within the range also meet the requirements.

[0046] Specifically, the power of the plasma surface treatment is 200-2000W, for example, it can be 200W, 400W, 600W, 800W, 1000W, 1200W, 1400W, 1600W, 1800W or 2000W, but is not limited to the listed values, and other unlisted values ​​within the range also meet the requirements.

[0047] Specifically, the absolute vacuum degree of the plasma surface treatment is ≤1×10 -6 Pa, for example, can be 1×10 - 6 Pa, 0.9×10 -6 Pa, 0.8×10 -6 Pa, 0.7×10 -6 Pa, 0.6×10 -6 Pa, 0.5×10 -6 Pa, 0.4×10 -6 Pa, 0.3×10 -6 Pa, 0.2×10 -6 Pa or 0.1×10 -6 Pa, etc., but not limited to the listed values, other values ​​not listed in this range also meet the requirements.

[0048] Specifically, the temperature of the plasma surface treatment is 80-300°C, for example, it can be 80°C, 100°C, 120°C, 140°C, 160°C, 180°C, 200°C, 220°C, 240°C, 260°C, 280°C or 300°C, but is not limited to the listed values, and other unlisted values ​​within the range also meet the requirements.

[0049] Specifically, the time of the plasma surface treatment is 5-60 min, for example, it can be 5 min, 10 min, 15 min, 20 min, 25 min, 30 min, 35 min, 40 min, 45 min, 50 min, 55 min or 60 min, but is not limited to the listed values, and other unlisted values ​​within the range also meet the requirements.

[0050] Specifically, the metal film coating method includes physical vapor deposition.

[0051] Specifically, the deposition power of the metal-plated film is 5-60kW, for example, it can be 5kW, 10kW, 15kW, 20kW, 25kW, 30kW, 35kW, 40kW, 45kW, 50kW, 55kW or 60kW, etc., but is not limited to the listed values, and other unlisted values ​​within the range also meet the requirements.

[0052] Specifically, the temperature of the metal-plated film is 200-400°C, for example, 200°C, 250°C, 300°C, 350°C or 400°C, but is not limited to the listed values, and other values ​​not listed within the range also meet the requirements.

[0053] Specifically, the absolute vacuum degree of the metallized film is ≤1×10 -3 Pa, for example, can be 1×10 -3 Pa, 0.8×10 -3 Pa, 0.6×10 -3 Pa, 0.4×10 -3 Pa, 0.2×10 -3 Pa or 0.1×10 -3 Pa, etc., but not limited to the listed values, other values ​​not listed in this range also meet the requirements.

[0054] Specifically, the thickness of the film layer obtained by the metal plating film is 100-400nm, for example, it can be 100nm, 150nm, 200nm, 250nm, 300nm, 350nm or 400nm, but is not limited to the listed values, and other unlisted values ​​within the range also meet the requirements.

[0055] Specifically, the copper plating method includes chemical copper plating or electrolytic copper plating.

[0056] The copper plating parameters in the copper plating layer are selected according to the conventional requirements in the art to ensure that the thickness limit of the copper plating layer can be achieved.

[0057] The plating solutions used in the chemical copper plating and the electroplated copper layer are selected according to the conventional requirements in the art to ensure that the thickness of the copper plating layer can be achieved.

[0058] Specifically, the operating pH value of the electroplated copper layer is 1-3, for example, it can be 1, 1.5, 2, 2.5 or 3, but is not limited to the listed values, and other values ​​not listed in the range also meet the requirements.

[0059] Specifically, the current density of the electroplated copper layer is 1.9-2.3A / dm 2 , for example, it can be 1.9A / dm 2 , 2A / dm 2 , 2.1A / dm 2 , 2.2A / dm 2 or 2.3A / dm 2 The above values ​​are not limited to the above values. Other values ​​not listed in the above values ​​also meet the requirements.

[0060] Specifically, the temperature of the electroplated copper layer is 20-25°C, for example, it can be 20°C, 21°C, 22°C, 23°C, 24°C or 25°C, but is not limited to the listed values, and other unlisted values ​​within the range also meet the requirements.

[0061] Specifically, the thickness of the copper layer obtained by the electroplated copper layer is 3-35μm, for example, it can be 3μm, 5μm, 10μm, 15μm, 20μm, 25μm, 30μm or 35μm, but is not limited to the listed values, and other unlisted values ​​within the range also meet the requirements.

[0062] Further, in order to illustrate the bonding effect and dielectric properties that can be achieved by the PTFE-based copper-clad laminate obtained by the preparation method provided by the present invention, the following actual examples are used for illustration, as follows:

[0063] The electrolytes used in the following copper electroplating layers include:

[0064] Anhydrous copper sulfate 120 g / L, sulfuric acid 190 g / L, Cl-65 ppm, AM-108 (purchased from Kunshan Hongqi Trading Co., Ltd.) 14 mL / L and AM-108B (purchased from Kunshan Hongqi Trading Co., Ltd.) 0.5 mL / L.

[0065] Example 1

[0066] This embodiment provides a method for preparing a PTFE-based copper-clad laminate, the preparation method comprising:

[0067] The copper-clad surface of the PTFE is sequentially subjected to plasma surface treatment, metal film coating and copper electroplating to obtain a PTFE-based copper-clad laminate;

[0068] The thickness of the PTFE is 150 μm;

[0069] The gas used in the plasma surface treatment is a mixed gas of H2, CF4 and O2, with a volume ratio of 2:1:1; the flow rate of the gas used in the plasma surface treatment is 50 mL / min; the power of the plasma surface treatment is 300 W; the absolute vacuum degree of the plasma surface treatment is 0.5×10 -6 Pa; the temperature of the plasma surface treatment is 120°C; the time of the plasma surface treatment is 30min;

[0070] The metallization method is physical vapor deposition; the deposition power of the metallization is 10 kW; the temperature of the metallization is 250°C; the absolute vacuum of the metallization is 1×10 -3 Pa; the film layer obtained by the metal plating film is a copper film; the thickness of the film layer obtained by the metal plating film is 100nm;

[0071] The operating pH value of the electroplated copper layer is 1; the current density of the electroplated copper layer is 2A / dm 2 ; The temperature of the electroplated copper layer is 21°C; The thickness of the copper layer obtained by the electroplated copper layer is 35μm.

[0072] Example 2

[0073] This embodiment provides a method for preparing a PTFE-based copper-clad laminate, the preparation method comprising:

[0074] The copper-clad surface of the PTFE is sequentially subjected to plasma surface treatment, metal film coating and copper electroplating to obtain a PTFE-based copper-clad laminate;

[0075] The thickness of the PTFE is 100 μm;

[0076] The gas used in the plasma surface treatment is a mixed gas of H2, CF4 and O2, with a volume ratio of 2:1:1; the flow rate of the gas used in the plasma surface treatment is 50 mL / min; the power of the plasma surface treatment is 500 W; the absolute vacuum degree of the plasma surface treatment is 0.1×10 -6 Pa; the temperature of the plasma surface treatment is 120°C; the time of the plasma surface treatment is 30min;

[0077] The metallized film is deposited by physical vapor deposition; the deposition power of the metallized film is 15 kW; the temperature of the metallized film is 250° C.; the absolute vacuum degree of the metallized film is 0.5×10 -3 Pa; the film layer obtained by the metal plating is a gold film; the thickness of the film layer obtained by the metal plating is 100nm;

[0078] The operating pH value of the electroplated copper layer is 1; the current density of the electroplated copper layer is 2A / dm 2 ; The temperature of the electroplated copper layer is 22°C; The thickness of the copper layer obtained by the electroplated copper layer is 35μm.

[0079] Example 3

[0080] This embodiment provides a method for preparing a PTFE-based copper-clad laminate, the preparation method comprising:

[0081] The copper-clad surface of the PTFE is sequentially subjected to plasma surface treatment, metal film coating and copper electroplating to obtain a PTFE-based copper-clad laminate;

[0082] The thickness of the PTFE is 10 μm;

[0083] The gas used in the plasma surface treatment is a mixed gas of H2, CF4 and O2, with a volume ratio of 2:1:1; the flow rate of the gas used in the plasma surface treatment is 30 mL / min; the power of the plasma surface treatment is 1000 W; the absolute vacuum degree of the plasma surface treatment is 1×10 -6 Pa; the temperature of the plasma surface treatment is 300°C; the time of the plasma surface treatment is 60min;

[0084] The metallization method is physical vapor deposition; the deposition power of the metallization is 5 kW; the temperature of the metallization is 200°C; the absolute vacuum of the metallization is 1×10 -3 Pa; the film layer obtained by the metal plating is a nickel film; the thickness of the film layer obtained by the metal plating is 100nm;

[0085] The operating pH value of the electroplated copper layer is 1.3; the current density of the electroplated copper layer is 2.3A / dm 2 ; The temperature of the electroplated copper layer is 20°C; The thickness of the copper layer obtained by the electroplated copper layer is 35μm.

[0086] Example 4

[0087] This embodiment provides a method for preparing a PTFE-based copper-clad laminate, the preparation method comprising:

[0088] The copper-clad surface of the PTFE is sequentially subjected to plasma surface treatment, metal film coating and copper electroplating to obtain a PTFE-based copper-clad laminate;

[0089] The thickness of the PTFE is 200 μm;

[0090] The gas used in the plasma surface treatment is a mixed gas of H2, CF4 and O2, with a volume ratio of 2:1:1; the flow rate of the gas used in the plasma surface treatment is 80 mL / min; the power of the plasma surface treatment is 2000 W; the absolute vacuum degree of the plasma surface treatment is 0.8×10 -6 Pa; the temperature of the plasma surface treatment is 80°C; the time of the plasma surface treatment is 5min;

[0091] The metallization method is physical vapor deposition; the deposition power of the metallization is 60 kW; the temperature of the metallization is 400°C; the absolute vacuum of the metallization is 1×10 -3 Pa; the film layer obtained by the metal plating is a copper film; the thickness of the film layer obtained by the metal plating is 400nm;

[0092] The operating pH value of the electroplated copper layer is 3; the current density of the electroplated copper layer is 1.9A / dm 2 ; The temperature of the electroplated copper layer is 25°C; The thickness of the copper layer obtained by the electroplated copper layer is 3μm.

[0093] Example 5

[0094] The only difference from Example 1 is that the gas used in the plasma surface treatment is a mixed gas of CF4 and O2 with a volume ratio of 1:1.

[0095] Example 6

[0096] The only difference from Example 1 is that the gas used in the plasma surface treatment is a mixed gas of H2 and O2 with a volume ratio of 1:1.

[0097] Example 7

[0098] The only difference from Example 1 is that the gas used in the plasma surface treatment is a mixed gas of CF4, NH3 and O2, with a volume ratio of 2:1:1.

[0099] Example 8

[0100] The only difference from Example 1 is that the gas used in the plasma surface treatment is O2.

[0101] Comparative Example 1

[0102] The only difference from Example 1 is that no plasma surface treatment is performed.

[0103] Comparative Example 2

[0104] The only difference from Example 1 is that a copper layer of the same thickness is attached to the metal-plated film by electroplating a copper layer.

[0105] Comparative Example 3

[0106] The only difference from Example 1 is that the metal-plated film is a titanium film of equal thickness.

[0107] Comparative Example 4

[0108] The only difference from Example 1 is that the thickness of the film layer obtained by plating the metal film is 15 nm.

[0109] Comparative Example 5

[0110] The only difference from Example 1 is that the thickness of the film layer obtained by plating the metal film is 600 nm.

[0111] Comparative Example 6

[0112] The only difference from Example 1 is that a layer of 35 μm copper foil is added to the upper and lower surfaces of the plasma-treated PTFE respectively, and then a PTFE-based copper-clad laminate is obtained by high-temperature pressing (pressure of 3 MPa, pressing temperature of 370°C, pressing time of 120 min).

[0113] The PTFE-based copper-clad laminates obtained in the examples and comparative examples were tested for dielectric constant and dielectric loss according to IEC 61189-2-721 (2015-04) standard at a frequency of 10 GHz; the peel strength was tested according to IPC-TM-650 2.4.8 standard, and the results are shown in Table 1.

[0114] Table 1

[0115] Dielectric constant (Dk) @ 10GHz Dielectric loss (Df) @ 10GHz Peel strength (N / mm) Example 1 2.38 0.0008 2.80 Example 2 2.35 0.0007 3.00 Example 3 2.32 0.0005 3.50 Example 4 2.42 0.0006 3.20 Example 5 2.44 0.0009 1.20 Example 6 2.46 0.0010 2.38 Example 7 2.43 0.0012 2.30 Example 8 2.45 0.0011 1.00 Comparative Example 1 2.50 0.0010 0.60 Comparative Example 2 2.48 0.0010 0.80 Comparative Example 3 2.40 0.0008 2.30 Comparative Example 4 2.40 0.0008 2.50 Comparative Example 5 2.38 0.0007 2.60 Comparative Example 6 2.35 0.0008 1.50

[0116] It can be seen from Table 1 that, compared with the embodiments, in Comparative Example 1, the PTFE film is not surface treated, resulting in weak bonding between the PTFE film and the copper foil and poor peel strength; in Comparative Example 2, no vacuum metal plating is performed, and copper plating or chemical copper plating is performed directly, which will weaken the surface activity of the PTFE film after plasma treatment; in Comparative Example 3, a layer of metal titanium film is plated, which will cause interface problems between the titanium film and the electroplated copper layer, thereby affecting the performance of the PTFE-based copper clad laminate; in Comparative Examples 4 and 5, the thickness of the vacuum-plated metal film is too thin or too thick, which has little effect on the peel strength and dielectric strength of the copper clad laminate, but will lead to increased process difficulty and development cost.

[0117] The preferred embodiments of the present invention are described in detail above. However, the present invention is not limited to the specific details in the above embodiments. Within the technical concept of the present invention, a variety of simple modifications can be made to the technical solution of the present invention, and these simple modifications all belong to the protection scope of the present invention.

[0118] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, the present invention will not further describe various possible combinations.

[0119] In addition, various embodiments of the present invention may be arbitrarily combined, and as long as they do not violate the concept of the present invention, they should also be regarded as the contents disclosed by the present invention.

Claims

1. A method for preparing a PTFE-based copper-clad laminate, characterized in that: The preparation method comprises: The copper-clad surface of the PTFE is sequentially subjected to plasma surface treatment, metal film coating and copper coating to obtain a PTFE-based copper-clad laminate; The film layer obtained by plating the metal film includes one of copper film, nickel film or gold film, or a combination of at least two of them.

2. The preparation method according to claim 1, characterized in that The thickness of the PTFE is 10-200 μm.

3. The preparation method according to claim 1, characterized in that: The gas used in the plasma surface treatment includes one or a combination of at least two of H2, NH3, Ar, O2 or CF4; Preferably, the gas used in the plasma surface treatment includes H2, CF4 and O2 in a volume ratio of (1-2.5):1:1; Preferably, the flow rate of the gas used in the plasma surface treatment is 30-80 mL / min.

4. The preparation method according to claim 1, characterized in that: The power of the plasma surface treatment is 200-2000W; Preferably, the absolute vacuum degree of the plasma surface treatment is ≤1×10 -6 Pa; Preferably, the temperature of the plasma surface treatment is 80-300°C.

5. The preparation method according to claim 1, characterized in that: The plasma surface treatment time is 5-60 minutes.

6. The preparation method according to claim 1, characterized in that: The method of coating the metal film includes physical vapor deposition; Preferably, the deposition power of the metallized film is 5-60kW; Preferably, the temperature of the metallized film is 200-400°C; Preferably, the absolute vacuum degree of the metallized film is ≤1×10 -3 Pa.

7. The preparation method according to claim 1, characterized in that: The thickness of the film layer obtained by the metal plating is 100-400nm.

8. The preparation method according to claim 1, characterized in that: The copper plating method includes chemical copper plating or electroplating copper plating; Preferably, the operating pH value of the electroplated copper layer is 1-3; Preferably, the current density of the electroplated copper layer is 1.9-2.3A / dm 2 ; Preferably, the temperature of the electroplated copper layer is 20-25°C.

9. The preparation method according to claim 1, characterized in that: The thickness of the copper layer obtained by the copper plating layer is 3-35 μm.

10. Use of a PTFE-based copper-clad laminate obtained by the preparation method according to any one of claims 1 to 9, characterized in that: The use includes: using the PTFE-based copper-clad laminate as a raw material in the high-frequency and high-speed field.