Preparation method of light-emitting film using carbon as doping source to adjust electrical properties of ZnS film

Abstract

The invention discloses a preparation method of a light-emitting film with carbon as a doping source to adjust the electrical property of a ZnS film, and belongs to the technical field of film preparation. The preparation of the ZnS and C co-doped thin film is simultaneously carried out by matching magnetron sputtering with an ion beam assisted deposition method, the process is simple, and the controllability and operability are high; two main and auxiliary target materials, namely ZnS and a carbon target, are co-sputtered, and meanwhile, the auxiliary target material can be flexibly controlled to control the content of carbon doped in the thin film, so that the electrical property of the light-emitting thin film is adjusted; the ZnS target adopts direct current to perform film plating, and the prepared film is high in compactness and good in crystallization quality; the ion beam assisted deposition method is adopted for carbon doping plating, and the carbon content can be accurately controlled; therefore, the method is simple in process and high in controllability and operability, and the prepared thin film is excellent in electrical property and has important application value in the technical field of thin film preparation.

Description

Technical Field

[0001] The present invention belongs to the technical field of thin film preparation, and in particular, relates to a method for preparing a luminescent thin film using carbon as a doping source to adjust the electrical properties of a ZnS thin film. Background Art

[0002] Luminescent films have always been a very important component of optoelectronic devices, especially films with excellent electrical properties while having luminescent properties. Such films play a pivotal role in the use of various components. Among them, ZnS (zinc sulfide) is a II-VI group direct bandgap n-type semiconductor material with a wide bandgap of 3.7eV and a low work function. The film made of it is an important optoelectronic material with good optical transparency and high refractive index. It shows good chemical stability in many environments and is widely used in various fields, including photodetectors, light-emitting diodes (LEDs), solar cells, optical coatings and catalysts. However, single ZnS films have defects such as low conductivity and poor film crystallization quality. In particular, electrical properties seriously hinder the use of electronic components. At present, the luminescent films prepared by the material are difficult to meet the use requirements of high-precision electronic components due to the physical defects of the material itself. Therefore, it is urgent to solve the above problems to meet the higher demands in the field of film preparation technology. Summary of the invention

[0003] The purpose of the present invention is to overcome the defects of the prior art and provide a method for preparing a luminescent film using carbon as a doping source to adjust the electrical properties of the ZnS film.

[0004] The purpose of the present invention can be achieved through the following technical solutions:

[0005] A method for preparing a luminescent film using carbon as a doping source to adjust the electrical properties of a ZnS film comprises the following steps:

[0006] S1. Select substrate materials that meet the use requirements of light-emitting components;

[0007] S2. After strictly cleaning the main target material, doping target material and substrate material, place them in the sputtering chamber and evacuate them;

[0008] S3, after evacuation, start the coating system and introduce argon gas, so that argon ions bombard the two main and auxiliary targets for pre-sputtering;

[0009] S4. After the pre-sputtering is completed, the process parameters of the main target material and the doping target material are adjusted, and coating is performed to obtain a light-emitting film using carbon as a doping source to adjust the electrical properties of the ZnS film.

[0010] Furthermore, in step S1, the substrate material is ultra-white high-transmittance glass.

[0011] Furthermore, in step S2, the main target material is high-purity ceramic ZnS, and the doped target material is a high-purity carbon target.

[0012] Furthermore, a direct current power supply is used in the coating process in step S4.

[0013] Furthermore, in step S4, the target material is doped by ion beam assisted deposition.

[0014] Furthermore, in step S4, the DC power of the coating is 150 W, the Kaufman ion gun is turned on for doping the target material, the working gas pressure is 1.0 Pa, the Ar flow rate is 20 sccm, and the sputtering time is 25 min.

[0015] Argon ions bombard the main target material and the doped target material for pre-sputtering to achieve the purpose of activating the target material and removing oxides on the target material surface; the main target material and the doped target material are co-sputtered to coat the carbon-doped ZnS luminescent film; and ion beam assisted deposition is used to accurately control the amount of carbon doping.

[0016] Beneficial effects of the present invention:

[0017] 1. Magnetron sputtering combined with ion beam assisted deposition is used to simultaneously prepare ZnS and C co-doped thin films, which has simple process, strong controllability and operability;

[0018] 2. ZnS and carbon targets are co-sputtered as main and auxiliary targets. At the same time, the auxiliary target can be flexibly controlled to control the carbon content doped in the film, thereby adjusting the electrical properties of the luminescent film;

[0019] 3. The ZnS target uses direct current to plate the thin film, and the prepared film has high density and good crystal quality; the ion beam assisted deposition method is used for carbon doping plating, and the carbon content can be accurately controlled;

[0020] Therefore, the process of the present invention is simple, and the controllability and operability are strong. The obtained thin film has excellent electrical properties and has important application value in the field of thin film preparation technology. DETAILED DESCRIPTION

[0021] The following will be combined with the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0022] Example 1

[0023] S1. Select ultra-clear high-transmittance glass as the substrate material;

[0024] S2. After strictly cleaning the high-purity ceramic ZnS main target, the high-purity carbon target doped target and the ultra-white high-transmittance glass substrate material, place them in the sputtering chamber and evacuate them;

[0025] S3, when the vacuum degree reaches 7.0×10 -5 Pa, start the coating system and introduce argon gas, so that argon ions bombard the two main and auxiliary targets for pre-sputtering;

[0026] S4. After the pre-sputtering, the DC power is 150W, the Kaufman ion gun is turned on for doping the target material, the working gas pressure is 1.0Pa, the Ar flow rate is 20sccm, the sputtering time is 25min, and the coating is carried out to obtain a luminescent film with carbon as the doping source to adjust the electrical properties of the ZnS film.

[0027] Therefore, the process of the present invention is simple, and the controllability and operability are strong. The obtained thin film has excellent electrical properties and has important application value in the field of thin film preparation technology.

[0028] In the description of the specification, the description with reference to the terms "one embodiment", "example", "specific example", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0029] The above contents are merely examples and explanations of the present invention. Those skilled in the art may make various modifications or additions to the specific embodiments described or replace them in a similar manner. As long as they do not deviate from the invention or exceed the scope defined by the claims, they shall all fall within the protection scope of the present invention.

Claims

1. A method for preparing a luminescent film using carbon as a doping source to adjust the electrical properties of a ZnS film, characterized in that: The following steps are involved: S1. Select substrate materials that meet the use requirements of light-emitting components; S2. After strictly cleaning the main target material, doping target material and substrate material, place them in the sputtering chamber and evacuate them; S3, after evacuation, start the coating system and introduce argon gas, so that argon ions bombard the two main and auxiliary targets for pre-sputtering; S4. After the pre-sputtering is completed, the process parameters of the main target material and the doping target material are adjusted, and coating is performed to obtain a light-emitting film using carbon as a doping source to adjust the electrical properties of the ZnS film.

2. The method for preparing a luminescent film using carbon as a doping source to adjust the electrical properties of a ZnS film according to claim 1, characterized in that: In step S1, the substrate material is ultra-clear high-transmittance glass.

3. The method for preparing a luminescent film using carbon as a doping source to adjust the electrical properties of a ZnS film according to claim 1, characterized in that: In step S4, a direct current power supply is used during the coating process.

4. The method for preparing a luminescent film using carbon as a doping source to adjust the electrical properties of a ZnS film according to claim 1, characterized in that: In step S4, the target material is doped by ion beam assisted deposition.

5. The method for preparing a luminescent film using carbon as a doping source to adjust the electrical properties of a ZnS film according to claim 1, characterized in that: In step S4, the DC power of the coating is 150 W, the Kaufman ion gun is turned on for doping the target material, the working gas pressure is 1.0 Pa, the Ar flow rate is 20 sccm, and the sputtering time is 25 min.