Laser assembly, preparation method and control method

Abstract

The embodiment of the invention discloses a laser assembly, a preparation method and a control method, the laser assembly comprises a base, an aluminum nitride gold tin heat sink, a laser chip and a heating resistor, based on this, in the working process, the laser assembly can realize the laser function by electrifying a laser, and the laser chip can be electrically connected with the heating resistor. When the laser assembly is applied to the extremely cold condition, if the laser chip cannot adapt to the extremely cold temperature, the heating resistor is powered on deliberately, the heating resistor can generate heat energy under the influence of current, and then the heat energy is transmitted through the aluminum nitride gold tin heat sink to heat the laser chip, so that the laser chip can work normally; therefore, even if the laser chip is weak in low-temperature resistance, the laser chip can work under a low-temperature condition after being heated by the heating resistor, so that the working stability of the laser assembly is guaranteed, and the cost of the laser assembly is reduced.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of laser technology, and in particular to a laser component, a preparation method, and a control method. Background Art

[0002] At present, the low-temperature performance of coaxial laser products on the market generally depends on whether the laser chip itself meets the working conditions under extremely cold conditions. Therefore, the price of laser chips on the market continues to rise as the working temperature continues to drop. In addition, some types of laser chips cannot meet the working conditions under extremely cold conditions. Therefore, in traditional technology, in order to enable the laser to work in extremely cold conditions, the cost is high. Summary of the invention

[0003] The present invention aims to solve at least one of the technical problems existing in the prior art or related art.

[0004] To this end, a first aspect of the present invention provides a laser assembly.

[0005] A second aspect of the present invention provides a preparation method.

[0006] A third aspect of the present invention provides a control method.

[0007] In view of this, according to a first aspect of an embodiment of the present application, a laser assembly is proposed, comprising:

[0008] Base;

[0009] An aluminum nitride gold tin heat sink, wherein the aluminum nitride gold tin heat sink is disposed on the base;

[0010] A laser chip, wherein the laser chip is connected to the aluminum nitride gold tin heat sink;

[0011] A heating resistor is connected to the aluminum nitride gold tin heat sink.

[0012] In a possible implementation, the laser assembly further includes:

[0013] A ceramic pad, wherein the ceramic pad is arranged on the base;

[0014] A monitoring chip is disposed on the ceramic pad, and the monitoring chip is communicatively connected with the laser chip.

[0015] In a possible implementation, the laser assembly further includes:

[0016] A spherical lens cap is connected to the base and covers the aluminum nitride gold tin heat sink, the laser chip and the monitoring chip.

[0017] According to a second aspect of an embodiment of the present application, a preparation method is provided for preparing a laser component as described in any of the above technical solutions, the preparation method comprising:

[0018] Eutectic welding the laser chip and the aluminum nitride gold tin heat sink;

[0019] By adjusting the eutectic temperature and the eutectic time, at least a portion of the gold-tin solder of the aluminum nitride gold-tin heat sink is melted to form atomic diffusion with the laser chip and the base.

[0020] In a feasible implementation manner, before the step of eutectic welding the laser chip and the aluminum nitride gold tin heat sink, the method further includes:

[0021] Solidifying the ceramic pad on the base through conductive silver glue;

[0022] The monitoring chip is solidified on the ceramic pad by conductive silver glue.

[0023] In a feasible embodiment, the preparation method further comprises:

[0024] The spherical lens cap is welded to the base in a nitrogen environment and in a dry environment with a temperature lower than a first threshold.

[0025] According to a third aspect of an embodiment of the present application, a control method is provided for controlling a laser assembly as described in any of the above technical solutions. The control method includes:

[0026] Acquiring ambient temperature information of the laser assembly and target operating temperature information of the laser assembly;

[0027] Based on the ambient temperature information and the target operating temperature information, power supply parameters of the heating resistor are determined.

[0028] In a feasible implementation manner, the step of determining the power supply parameters of the heating resistor based on the ambient temperature information and the target operating temperature information includes:

[0029] The power supply parameters of the heating resistor are determined by the following formula:

[0030]

[0031] Among them, ΔT is the difference between the ambient temperature information and the target operating temperature information; η is the utilization efficiency of the laser component for the heating source; P is the input power of the heating resistor; C is the thermal conductivity of the laser chip; ρ is the resistivity of the heating resistor; L is the length of the heating resistor; S is the cross-sectional area of ​​the resistor.

[0032] In a feasible embodiment, the preparation method further comprises:

[0033] By controlling the power supply parameters of the heating resistor, the waveguide phase change of the laser chip is adjusted.

[0034] In a feasible implementation manner, the step of adjusting the waveguide phase change of the laser chip by controlling the power supply parameters of the heating resistor includes:

[0035] The waveguide phase change of the laser chip is adjusted by the following formula:

[0036]

[0037] Among them, Δψ is the waveguide phase change, λ is the operating wavelength of the laser chip; dn / dT is the thermo-optical coefficient of the laser chip optical waveguide; ΔT is the difference between the ambient temperature information and the target operating temperature information; L is the length of the optical waveguide in the thermal modulation area.

[0038] Compared with the prior art, the present invention has at least the following beneficial effects:

[0039] The laser assembly provided in the embodiment of the present application includes a base, an aluminum nitride gold tin heat sink, a laser chip and a heating resistor. Based on this, during the working process, the laser assembly can realize the laser function by powering on the laser. When the laser assembly is used in an extremely cold condition, if the laser chip cannot adapt to the extremely cold temperature, the heating resistor is deliberately powered on. The heating resistor can generate heat energy under the influence of the current, and then transfer the heat energy through the aluminum nitride gold tin heat sink to heat the laser chip, so that the laser chip can work normally. Based on this, even if the laser chip itself has weak low-temperature resistance, the laser chip can work under low-temperature conditions by being heated by the heating resistor, thereby ensuring the stability of the laser assembly operation and reducing the cost of the laser assembly. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Various other advantages and benefits will become apparent to those of ordinary skill in the art by reading the detailed description of the preferred embodiments below. The accompanying drawings are only for the purpose of illustrating the preferred embodiments and are not to be considered as limiting the present application. Also, the same reference symbols are used throughout the accompanying drawings to represent the same components. In the accompanying drawings:

[0041] Figure 1 A schematic structural diagram of a laser assembly according to an embodiment of the present application;

[0042] Figure 2 A schematic circuit diagram of a heating resistor of a laser assembly according to an embodiment of the present application;

[0043] Figure 3A schematic flowchart of a method for preparing a laser component according to an embodiment of the present application;

[0044] Figure 4 A schematic flowchart of the steps of a control method for a laser assembly according to an embodiment of the present application.

[0045] in, Figure 1 and Figure 2 The corresponding relationship between the reference numerals and the component names is as follows:

[0046] 110 is a base, 120 is connected to aluminum nitride gold, 130 is a laser chip, 140 is a heating resistor, 150 is a ceramic pad, 160 is a spherical lens cap, 170 is a lead, and 180 is a monitoring chip. DETAILED DESCRIPTION

[0047] In order to better understand the above-mentioned technical scheme, the technical scheme of the embodiments of the present application is described in detail below through the accompanying drawings and specific embodiments. It should be understood that the embodiments of the present application and the specific features in the embodiments are detailed descriptions of the technical scheme of the embodiments of the present application, rather than limitations on the technical scheme of the present application. In the absence of conflict, the embodiments of the present application and the technical features in the embodiments may be combined with each other.

[0048] like Figure 1 and Figure 2 As shown, according to the first aspect of an embodiment of the present application, a laser component is proposed, including: a base 110; an aluminum nitride gold tin heat sink 120, which is arranged on the base 110; a laser chip 130, which is connected to the aluminum nitride gold tin heat sink 120; and a heating resistor 140, which is connected to the aluminum nitride gold tin heat sink 120.

[0049] The laser assembly provided in the embodiment of the present application includes a base 110, an aluminum nitride gold tin heat sink 120, a laser chip 130 and a heating resistor 140. Based on this, during the working process, the laser assembly can realize the laser function by powering on the laser. When the laser assembly is used in an extremely cold condition, if the laser chip 130 cannot adapt to the extremely cold temperature, the heating resistor 140 is deliberately powered on. The heating resistor 140 can generate heat energy under the influence of the current, and then transfer the heat energy through the aluminum nitride gold tin heat sink 120 to heat the laser chip 130, so that the laser chip 130 can work normally. Based on this, even if the laser chip 130 itself has a weak ability to resist low temperatures, the laser chip 130 can work under low temperature conditions by being heated by the heating resistor 140, thereby ensuring the stability of the operation of the laser assembly and reducing the cost of the laser assembly.

[0050] In some examples, there may be two or more heating resistors 140. To facilitate the preparation of the laser component and improve the strength of the laser component, the heating resistor 140 may be directly integrated into the aluminum nitride gold tin heat sink 120. For example, the gold tin layer of the aluminum nitride gold tin heat sink 120 may be etched to form a circuit, and the circuit is connected to a thin film resistor, and the thin film resistor may be used as the heating resistor 140.

[0051] like Figure 1 and Figure 2 As shown, in a feasible implementation, the laser assembly further includes: a ceramic pad 150 , which is disposed on the base 110 ; a monitoring chip 180 , which is disposed on the ceramic pad 150 , and the monitoring chip 180 is communicatively connected with the laser chip 130 .

[0052] In this technical solution, the structural composition of the laser assembly is further provided. The laser assembly may also include a ceramic pad 150 and a monitoring chip 180. By setting the monitoring chip 180, the light-emitting state of the laser chip 130 can be detected, and then the operating state of the laser assembly can be monitored, which is convenient for controlling the operation of the laser assembly.

[0053] In this technical solution, it is considered that the laser assembly needs to work at extremely cold temperatures, that is, the laser assembly may work under conditions with a large temperature difference span, and the thermal expansion coefficients of the monitoring chip 180 and the base 110 are different, so a ceramic pad 150 is set. The setting of the ceramic pad 150 ensures that the long-term reliability of the thermal expansion and contraction between the cold and hot materials will not cause damage to the monitoring chip 180, and avoids the inability to control the light emission of the laser chip 130 through the monitoring chip 180 due to the degradation of the monitoring performance of the working condition of the laser assembly. There is an expansion buffer between the monitoring chip 180 and the base 110, which ensures the reliability of the operation of the monitoring chip 180.

[0054] In some examples, the base 110 may be a TO56 5PIN base 110 , and the monitoring chip 180 may be an MPD monitoring chip 180 .

[0055] like Figure 1 and Figure 2 As shown, in a feasible implementation, the laser assembly further includes: a spherical lens cap 160 , which is connected to the base 110 and covers the aluminum nitride gold tin heat sink 120 , the laser chip 130 and the monitoring chip 180 .

[0056] In this technical solution, the laser assembly may further include a spherical lens cap 160, which is connected to the base 110, and covers the aluminum nitride gold tin heat sink 120, the laser chip 130 and the monitoring chip 180, thereby protecting the aluminum nitride gold tin heat sink 120, the laser chip 130 and the monitoring chip 180.

[0057] In some examples, Figure 1 Devices w1 and w2 are used as the positive and negative electrodes of the monitoring chip 180; device w11 is used as the positive electrode of the laser chip, and devices w7-w10 are the negative electrodes of the laser chip; devices w12 and w13 are used to supply power to the heating resistor 140; devices w3-w6 are used to connect to the power supply,

[0058] In summary, the laser assembly provided by the embodiment of the present application uses a heating resistor 140 and an aluminum nitride gold tin heat sink 120 to improve the low-temperature performance of the coaxial laser product and improve the working platform for some chips that do not have extremely cold working conditions. When the current flows through the heating resistor 140, the electrical energy is converted into thermal energy. This solution uses this characteristic to integrate the heating resistor 140 module on the aluminum nitride gold tin heat sink 120 so that the thermal energy directly acts on the laser chip 130. Then, the size of the current can be controlled by the circuit to control the size of the heating resistor 140, so that the laser chip 130 is always in the working temperature range under extremely cold conditions, improving and ensuring its low-temperature working performance. At the same time, because the heating resistor 140 is directly integrated on the aluminum nitride heat sink, the product manufacturing process route is simplified, reducing the production cycle and cost.

[0059] like Figure 3 As shown, according to the second aspect of the embodiment of the present application, a preparation method is proposed for preparing a laser component as any of the above technical solutions, and the preparation method includes:

[0060] Step 201: eutectic welding the laser chip and the aluminum nitride gold tin heat sink;

[0061] Step 202: By adjusting the eutectic temperature and the eutectic time, at least a portion of the gold-tin solder of the aluminum nitride gold-tin heat sink is melted to form atomic diffusion with the laser chip and the base.

[0062] The preparation method provided in the embodiment of the present application is used to prepare a laser component such as any of the above-mentioned technical solutions, so the preparation method has all the beneficial effects of the laser component of the above-mentioned technical solutions.

[0063] The preparation method provided by the embodiment of the present application is to eutectically weld the laser chip and the aluminum nitride gold-tin heat sink, and then by adjusting the eutectic temperature and eutectic time, at least part of the gold-tin solder of the aluminum nitride gold-tin heat sink is melted to form atomic diffusion with the laser chip and the base, which can form a eutectic with ζ-phase and δ-phase intermetallic compounds, thereby forming good contact at the welding interface, effectively reducing the void rate of the welding area, and increasing the chip shear force, forming a good heat conduction channel, and improving the low-temperature working performance of the laser. It can further ensure the performance of the laser component and improve the ability to operate at extremely cold temperatures.

[0064] In a feasible implementation, before the step of eutectic welding the laser chip and the aluminum nitride gold tin heat sink, the step also includes: solidifying the ceramic pad on the base through conductive silver glue; solidifying the monitoring chip on the ceramic pad through conductive silver glue.

[0065] In this technical solution, a connection method between the ceramic pad and the monitoring chip is further provided. The ceramic pad is solidified on the base through conductive silver glue; the monitoring chip is solidified on the ceramic pad through conductive silver glue, which can make the fixation of the ceramic pad and the monitoring chip more reliable and stable.

[0066] In a feasible implementation manner, the preparation method further includes: welding the spherical lens cap to the base in a nitrogen environment and in a dry environment with a temperature lower than a first threshold.

[0067] In this technical solution, a connection method for the spherical lens cap is further provided. The spherical lens cap is welded to the base in a nitrogen environment and in a dry environment with a temperature lower than a first threshold value. This can ensure that each component is protected from oxidation damage during a long-term power-on process in nitrogen inert gas and dry gas. At the same time, the dry gas ensures that there is no water vapor in the gas during the power-on process to be electrolytically corroded by the circuit, thereby ensuring long-term reliability.

[0068] In some examples, in a nitrogen environment and in a dry environment with a temperature below a first threshold, the step of welding the spherical lens cap to the base includes: welding the spherical lens cap to the base by resistance welding in a dry gas with a nitrogen purity of 99.99% and a dew point of -40°C, which can further improve the performance of the laser assembly.

[0069] In some examples, the laser assembly may further include leads connected to the laser chip, the heating resistor, and the monitoring chip for powering up the laser chip, the heating resistor, and the monitoring chip. To improve communication capabilities, the leads may be made of gold wire.

[0070] like Figure 4 As shown, according to the third aspect of the embodiment of the present application, a control method is proposed for controlling a laser assembly as in any of the above technical solutions, and the control method includes:

[0071] Step 301: Acquire the ambient temperature information of the laser assembly and the target operating temperature information of the laser assembly;

[0072] Step 302: Determine the power supply parameters of the heating resistor based on the ambient temperature information and the target operating temperature information.

[0073] The control method provided in the embodiment of the present application is used to control the laser component of any of the above technical solutions, so the control method has all the beneficial effects of the laser component of any of the above technical solutions.

[0074] The control method provided in the embodiment of the present application first obtains the ambient temperature information of the laser component and the target operating temperature information of the laser component, and then determines the power supply parameters of the heating resistor based on the ambient temperature information and the target operating temperature information. Based on this, the power supply parameters of the heating resistor can be adapted to the ambient temperature of the laser component and the target operating temperature of the laser component, and the heating resistor is powered by the determined power supply parameters, so that the ambient temperature of the laser chip can be adjusted, and the ambient temperature of the laser chip can be adjusted to the target operating temperature, so that the laser component can operate normally in extremely cold conditions.

[0075] In a feasible implementation manner, based on the ambient temperature information and the target operating temperature information, the step of determining the power supply parameters of the heating resistor includes:

[0076] The power supply parameters of the heating resistor are determined by the following formula:

[0077]

[0078] Among them, ΔT is the difference between the ambient temperature information and the target operating temperature information; η is the utilization efficiency of the laser component for the heating source; P is the input power of the heating resistor; C is the thermal conductivity of the laser chip; ρ is the resistivity of the heating resistor; L is the length of the heating resistor; S is the cross-sectional area of ​​the resistor.

[0079] In this technical solution, specific steps for determining the power supply parameters of the heating resistor are further provided. Through the determination of the above formula, on the one hand, it is convenient for the processor to calculate and obtain power supply based on ambient temperature information and target operating temperature information, thereby improving response efficiency; on the other hand, in addition to being related to the difference between ambient temperature information and target operating temperature information, the input power of the heating resistor can also be related to the utilization efficiency of the heating source by the laser component, the thermal conductivity of the laser chip, the resistivity of the thermal resistor, the length of the heating resistor and the cross-sectional area of ​​the resistor, so that the input power of the heating resistor can be related to the parameters of the laser chip and the parameters of the heating resistor itself, which can make the determination of the power supply parameters of the heating resistor more accurate.

[0080] In some examples, after the input power of the heating resistor is determined, the power supply parameters of the heating resistor can be further determined by the following formula:

[0081] P=I2R

[0082]

[0083] Among them, P is the input power of the heating resistor; I is the input current; R is the resistance value of the heating resistor, ρ is the resistivity of the heating resistor; L is the length of the heating resistor; S is the cross-sectional area of ​​the resistor, W represents the width of the resistor; d represents the thickness of the resistor.

[0084] Based on this, it is easy to determine the power supply current of the heating resistor, making the control of the laser component more convenient.

[0085] In a feasible implementation, the preparation method further includes: adjusting the waveguide phase change of the laser chip by controlling the power supply parameters of the heating resistor.

[0086] In the laser assembly provided in the embodiment of the present application, a metal thin film resistor is selected as a heating resistor during use. A fixed heating power can be selected to analyze the average temperature change in the laser waveguide area, and the performance change of the thin film resistor and the laser is optimized and compared. Then, combined with the actual application needs of the industry, the power (Pπ) required for modulating the π phase of the designed laser chip is determined to be x mW, and the transient response time is about xμ. The waveguide phase change of the laser chip can be adjusted by adjusting the power supply parameters of the heating resistor, making the control of the laser assembly more convenient and improving the signal reception capability.

[0087] In a feasible implementation manner, the step of adjusting the waveguide phase change of the laser chip by controlling the power supply parameters of the heating resistor includes: adjusting the waveguide phase change of the laser chip by the following formula:

[0088]

[0089] Among them, Δψ is the waveguide phase change, λ is the operating wavelength of the laser chip; dn / dT is the thermo-optical coefficient of the laser chip optical waveguide; ΔT is the difference between the ambient temperature information and the target operating temperature information; L is the length of the optical waveguide in the thermal modulation area.

[0090] In this technical solution, a specific method for determining the waveguide phase change is further provided. The adjustment of the waveguide phase change is related to the operating wavelength of the laser chip, the thermo-optical coefficient of the laser chip optical waveguide, the difference between the ambient temperature information and the target operating temperature information, and the length of the optical waveguide in the thermal modulation area. This can improve the control accuracy of the laser component and facilitate the processor to process the signal.

[0091] In some examples, assuming the waveguide phase change is π:

[0092]

[0093] Among them, P π represents the waveguide phase change as π; λ is the operating wavelength of the laser chip; dn / dT is the thermo-optical coefficient of the laser chip optical waveguide; C is the thermal conductivity of the laser chip; ρ is the material density of the laser chip; S is the cross-sectional area of ​​the optical waveguide; and η is the utilization efficiency of the heating source.

[0094] Based on this, the laser assembly provided in the embodiment of the present application is combined with the control method, and the present solution is obtained through simulation and experimental verification, which can improve the operating performance of the laser assembly in a low temperature environment. Since the performance of the semiconductor laser chip is strongly related to the operating temperature, the side mode suppression ratio, spectrum width and center wavelength characteristics generated by the laser assembly directly determine the receivability of the signal transmission and the distance of the signal transmission. The present application can prevent the abnormal spectral characteristics such as mode hopping and center wavelength shift of the laser chip in extremely cold conditions through thermal energy conversion (each center wavelength channel has a corresponding specification, and exceeding the range will degrade the transmission signal), so that the laser product can still maintain good signal transmission characteristics under extremely cold conditions, and at the same time, it can also improve the working platform for laser chips without extremely cold working conditions, greatly simplifying the production process, reducing production costs, and broadening the types of low-temperature laser products, making the selection of suppliers and clients more diversified, and providing choices for more product solutions.

[0095] In the present invention, the terms "first", "second", and "third" are used for descriptive purposes only and should not be understood as indicating or implying relative importance; the term "plurality" refers to two or more, unless otherwise clearly defined. The terms "installed", "connected", "connected", "fixed", etc. should be understood in a broad sense. For example, "connected" can be a fixed connection, a detachable connection, or an integral connection; "connected" can be a direct connection or an indirect connection through an intermediate medium. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0096] In the description of the present invention, it is necessary to understand that the directions or positional relationships indicated by terms such as “upper”, “lower”, “left”, “right”, “front” and “back” are based on the directions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or unit referred to must have a specific direction, be constructed and operated in a specific orientation, and therefore, cannot be understood as a limitation on the present invention.

[0097] In the description of this specification, the description of the terms "one embodiment", "some embodiments", "specific embodiments", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0098] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A laser assembly, characterized in that: include: Base; An aluminum nitride gold tin heat sink, wherein the aluminum nitride gold tin heat sink is disposed on the base; A laser chip, wherein the laser chip is connected to the aluminum nitride gold tin heat sink; A heating resistor is connected to the aluminum nitride gold tin heat sink.

2. The laser assembly according to claim 1, characterized in that Also includes: A ceramic pad, wherein the ceramic pad is arranged on the base; A monitoring chip is disposed on the ceramic pad, and the monitoring chip is communicatively connected with the laser chip.

3. The laser assembly according to claim 2, characterized in that Also includes: A spherical lens cap is connected to the base and covers the aluminum nitride gold tin heat sink, the laser chip and the monitoring chip.

4. A preparation method, characterized in that: Used to prepare a laser component according to any one of claims 1 to 3, the preparation method comprising: Eutectic welding the laser chip and the aluminum nitride gold tin heat sink; By adjusting the eutectic temperature and the eutectic time, at least a portion of the gold-tin solder of the aluminum nitride gold-tin heat sink is melted to form atomic diffusion with the laser chip and the base.

5. The preparation method according to claim 4, characterized in that: Before the step of eutectic welding the laser chip and the aluminum nitride gold tin heat sink, the method further includes: Solidifying the ceramic pad on the base through conductive silver glue; The monitoring chip is solidified on the ceramic pad by conductive silver glue.

6. The preparation method according to claim 4, characterized in that: Also includes: The spherical lens cap is welded to the base in a nitrogen environment and in a dry environment with a temperature lower than a first threshold.

7. A control method, characterized in that: Used to control the laser assembly according to any one of claims 1 to 3, the control method comprising: Acquiring ambient temperature information of the laser assembly and target operating temperature information of the laser assembly; Based on the ambient temperature information and the target operating temperature information, power supply parameters of the heating resistor are determined.

8. The control method according to claim 7, characterized in that: The step of determining the power supply parameters of the heating resistor based on the ambient temperature information and the target operating temperature information comprises: The power supply parameters of the heating resistor are determined by the following formula: Among them, ΔT is the difference between the ambient temperature information and the target operating temperature information; η is the utilization efficiency of the laser component for the heating source; P is the input power of the heating resistor; C is the thermal conductivity of the laser chip; ρ is the resistivity of the heating resistor; L is the length of the heating resistor; S is the cross-sectional area of ​​the resistor.

9. The control method according to claim 8, characterized in that: Also includes: By controlling the power supply parameters of the heating resistor, the waveguide phase change of the laser chip is adjusted.

10. The control method according to claim 9, characterized in that: The step of adjusting the waveguide phase change of the laser chip by controlling the power supply parameters of the heating resistor comprises: The waveguide phase change of the laser chip is adjusted by the following formula: Among them, Δψ is the waveguide phase change, λ is the operating wavelength of the laser chip; dn / dT is the thermo-optical coefficient of the laser chip optical waveguide; ΔT is the difference between the ambient temperature information and the target operating temperature information; L is the length of the optical waveguide in the thermal modulation area.

Images