Slice battery and preparation method thereof
By using vacuum coating technology to form a passivation film on the section section of the slice battery, the hydrogen escape problem caused by high-temperature film formation of alumina is solved and the open circuit voltage of the slice battery is increased.
Patent Information
- Application Number
- CN202411302022.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-18
- Publication Date
- 2024-12-17
AI Technical Summary
When the existing slice batteries form a passivation film on the slice section, the high film formation temperature of alumina causes hydrogen to escape, affecting the passivation effect and reducing the open circuit voltage.
The passivation film is formed on the section section of the slice battery by using physical vapor deposition. The deposition temperature is controlled from 30℃ to 220℃. Materials such as magnesium fluoride, alumina and silicon nitride are used to low pressure through a vacuum coating machine. Deposit the passivation film under the environment.
It effectively reduces the escape of hydrogen atoms in the film layer of the sliced battery, maintains the passivation effect, and improves the open circuit voltage of the sliced battery.
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Figure CN119153551A_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to the technical field of solar cells, and specifically provides a sliced cell and a preparation method thereof. Background Art
[0002] The photovoltaic industry is an indispensable part of the current new energy field. In terms of the layout of photovoltaic modules, shingled module technology is becoming increasingly popular. Shingled module technology is to slice traditional solar cells into sliced cells, connect each sliced cell by stacking them front and back, and directly connect the two sliced cells of the stack by conductive glue. The stacking is generally arranged horizontally or vertically, so that each sliced cell is connected in series / parallel, and finally laminated and packaged. Compared with traditional solar cell modules, there is no need to keep gaps between the sliced cells of shingled modules. Under the same area, the power of solar cell modules using shingled module technology is higher.
[0003] To make shingled modules, it is necessary to first use a laser to cut the complete solar cell into half or multiple pieces, and then assemble and weld them. However, the solar cell will inevitably be damaged after laser cutting, which will increase the recombination rate of the sliced cell at the slice section, thereby reducing the conversion efficiency of the sliced cell. Therefore, the current sliced cell will form a passivation film on the slice section to reduce the recombination rate of the sliced cell at the slice section, thereby increasing the conversion efficiency of the sliced cell.
[0004] At present, the passivation film formed on the sliced cross section of the sliced battery is mostly made of aluminum oxide, but the film formation temperature of aluminum oxide is relatively high, which can easily cause hydrogen in the hydrogen-doped film layer in the sliced battery to escape, affecting the passivation effect and not conducive to improving the open circuit voltage of the sliced battery. Summary of the invention
[0005] The present disclosure aims to solve the above technical problem, that is, to solve the problem that hydrogen escape is easily caused in the process of forming a passivation film on the sliced cross section of the existing sliced battery.
[0006] In a first aspect, the present disclosure provides a method for preparing a sliced battery, comprising: providing a sliced battery after slicing, the sliced battery comprising end faces adjacent to a front side and a back side, at least one of the end faces being a sliced section; forming a passivation film on the sliced section of the sliced battery by a vacuum coating method using physical vapor deposition, the deposition temperature of the passivation film being 30°C to 220°C.
[0007] In a specific embodiment of the preparation method of the above-mentioned sliced battery, a passivation film is formed on the sliced cross section of the sliced battery, including: placing the sliced battery into a coating chamber of a vacuum coating machine, evacuating the coating chamber and then heating it to increase its temperature; injecting a gaseous passivation film material into the coating chamber to deposit and form a passivation film on the sliced cross section of the sliced battery.
[0008] In a specific implementation of the above-mentioned method for preparing sliced batteries, the chamber pressure of the vacuum coating machine is 0 Mbar to 110 Mbar.
[0009] In a specific implementation of the above-mentioned method for preparing a sliced battery, the thickness of the passivation film is 8 nm to 110 nm.
[0010] In a specific implementation of the above-mentioned method for preparing a sliced battery, the passivation film material is one of magnesium fluoride, aluminum oxide and silicon nitride.
[0011] In a specific implementation of the above-mentioned method for preparing sliced batteries, the sliced batteries are placed vertically and stacked in a material box so that the sliced sections of the sliced batteries are located on the same horizontal plane and face upward, and the material box and the sliced batteries are placed together in the coating cavity.
[0012] In a specific implementation of the above-mentioned method for preparing a sliced battery, before injecting the gaseous passivation film material into the coating chamber, nitrogen is injected into the coating chamber to purge the sliced cross section of the sliced battery.
[0013] In a specific implementation of the above-mentioned method for preparing a sliced battery, after injecting the gaseous passivation film material into the coating chamber, nitrogen is injected into the coating chamber to purge the sliced cross section of the sliced battery.
[0014] In a second aspect, the present disclosure provides a sliced battery, comprising end faces adjacent to a front side and a back side, at least one of the end faces being a sliced section, a passivation film being arranged on the sliced section, the passivation film being formed by deposition at a temperature of 30°C to 220°C using a vacuum coating method of physical vapor deposition.
[0015] In a specific embodiment of the above-mentioned sliced cell, the sliced cell is any one of a PERC cell, a TOPCon cell, a heterojunction cell or a back contact cell.
[0016] Compared with the prior art, the present invention has at least the following advantages:
[0017] The preparation method of the sliced battery provided by the present disclosure includes: providing a sliced sliced battery, wherein the sliced battery includes end faces adjacent to the front and back sides, and at least one end face is a sliced section; forming a passivation film on the sliced section of the sliced battery by a vacuum coating method of physical vapor deposition, and the deposition temperature of the passivation film is 30° C. to 220° C. The vacuum coating method of physical vapor deposition can control the deposition temperature of the passivation film, so that the deposition temperature of the passivation film is low, and can effectively reduce the escape of hydrogen atoms doped in each film layer in the sliced battery, so as to maintain the passivation effect of each film layer, thereby improving the open circuit voltage of the sliced battery. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] The preferred embodiments of the present disclosure are described below in conjunction with the accompanying drawings, in which:
[0019] Figure 1 A method for preparing a sliced battery provided by the present disclosure;
[0020] FIG. 2A to FIG. 2C A schematic diagram of the cross-sectional structure of a solar cell provided by the present disclosure during the preparation process;
[0021] Figure 2D A schematic diagram of the cross-sectional structure of a sliced battery provided in the present invention.
[0022] Description of reference numerals:
[0023] 1. Substrate; 11. Doping layer; 2. First passivation layer; 3. Polysilicon layer; 4. Second passivation layer; 5. First anti-reflection layer; 6. Second anti-reflection layer; 71. First electrode; 72. Second electrode; 8. Passivation film; 10. Sliced battery. DETAILED DESCRIPTION
[0024] The preferred embodiments of the present disclosure are described below with reference to the accompanying drawings. It should be understood by those skilled in the art that these embodiments are only used to explain the technical principles of the present disclosure and are not intended to limit the protection scope of the present disclosure.
[0025] It should be noted that in the description of the present disclosure, the terms "upper", "lower", "left", "right", "inner", "outer" and the like indicating directions or positional relationships are based on the directions or positional relationships shown in the drawings, which are only for the convenience of description, and do not indicate or imply that the device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present disclosure. In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.
[0026] Solar cells are one of the basic components in photovoltaic modules. The solar cells in photovoltaic modules are arranged in series and parallel.
[0027] In some cases, after being formed, solar cells are generally sliced, for example, a solar cell is cut into two symmetrical sliced cells, and then a plurality of sliced cells are connected in series and in parallel. At this time, one side of each sliced cell has a sliced section.
[0028] For another example, in the stacking module technology, after the solar cell is formed, it will be sliced, and a solar cell will be cut into multiple sliced cells of the same shape, and then the multiple sliced cells will be stacked. At this time, some of the sliced cells have a sliced section only on one side, and the remaining sliced cells have a sliced section on both sides.
[0029] A passivation film is formed on the sliced cross section of the sliced battery, and the commonly used passivation film is aluminum oxide. The deposition temperature of aluminum oxide using chemical vapor deposition is generally between 250°C and 350°C. During the deposition of aluminum oxide, due to the excessively high deposition temperature, the hydrogen atoms in the hydrogen-doped film layer in the sliced battery will escape, thereby affecting the passivation effect of the sliced battery and being detrimental to increasing the open circuit voltage of the sliced battery.
[0030] In view of this, the present disclosure provides a method for preparing a sliced battery, such as Figure 1 As shown, the method includes: providing a sliced battery after slicing, the sliced battery includes end faces adjacent to the front and back sides, at least one end face is a slice section; using a vacuum coating method of physical vapor deposition to form a passivation film on the slice section of the sliced battery, and the deposition temperature of the passivation film is 30°C to 220°C.
[0031] This proposal is explained by taking the solar cell as a TOPCon cell as an example. FIG. 2A to FIG. 2C This is a schematic diagram of the cross-sectional structure of a solar cell provided by the present invention during the preparation process.
[0032] S1. Provide a solar cell. It specifically includes the following steps:
[0033] S11, providing a substrate 1, wherein the substrate 1 is of a first doping type.
[0034] S12, texturing is performed on the front side and the back side opposite to the front side of the substrate 1, and a pyramid-like structure is formed on the front side and the back side, thereby reducing the reflection of incident light, thereby improving the short-circuit current interruption of the battery, and further improving the photoelectric conversion efficiency of the battery. Among them, the front side of the substrate 1 is the light-facing side, and the back side of the substrate 1 is the backlight side. After the front side of the substrate 1 is texturized, the film layers formed on the front side have the same velvet structure as the front side.
[0035] As a specific example, the substrate 1 is put into a texturing liquid for texturing. The mass ratio of the components in the texturing liquid is H2O:KOH:additive=354:5.5:2, and the main components of the additive include: surfactant, nucleating agent, dispersant, catalyst and defoaming agent. The texturing temperature is 80°C and the texturing time is 400 seconds.
[0036] S13. Doping is performed on the front side of the substrate 1 to form a doping layer 11 of a second doping type on the front side. For example, when the substrate 1 is N-type doped, the doping type of the doping layer 11 is P-type doping, thereby forming a PN junction. As a specific example, the N-type single crystal silicon substrate 1 is placed in a boron diffusion furnace tube for a boron diffusion process, and the process temperature of the boron diffusion is 900°C to 1100°C. Boron sources such as trimethyl borate, boron tribromide, and boron trichloride can be used for boron diffusion. In the process of forming the boron doping layer 11 (i.e., the doping layer 11) on the front side, a BSG (borosilicate glass) layer will naturally form under the action of oxygen.
[0037] It should be noted that the present disclosure does not impose specific restrictions on the boron source, process temperature, diffusion depth, etc. of the boron diffusion or phosphorus diffusion process. Personnel in this field can design according to actual needs, and the above limitations are only some specific examples.
[0038] S14, removing the boron diffusion layer on the back side while retaining the BSG layer on the front side.
[0039] S15. A first passivation layer 2 and a doped polysilicon layer 3 are sequentially formed on the back of the substrate 1. The first passivation layer 2 can saturate the dangling bonds on the surface of the substrate 1, reduce the interface defect state density on the back of the substrate 1, and thus reduce the recombination center on the back of the substrate 1, thereby reducing the recombination rate of carriers, and ultimately increasing the open circuit voltage of the solar cell and improving the photoelectric conversion efficiency of the solar cell. The material of the first passivation layer 2 is a dielectric material, such as at least one of silicon oxide, amorphous silicon, polycrystalline silicon, silicon carbide, silicon nitride, silicon oxynitride, aluminum oxide or titanium oxide. The doping type of the polysilicon layer 3 is the same as the doping type of the substrate 1.
[0040] For example, the material of the first passivation layer 2 is silicon oxide, and the first passivation layer 2 is formed by chemical vapor deposition.
[0041] For example, the polysilicon layer 3 can be formed by chemical vapor deposition. In addition, a single crystal silicon layer can be formed first, and then a doped polysilicon layer 3 can be formed by doping and high-temperature annealing. As a specific example, when chemical vapor deposition is used, raw material gas (such as SiCl4, SiHCl3 or SiH4), doping gas (such as PH3) and hydrogen can be introduced, and after chemical reaction, a doped polysilicon layer 3 is grown on the back. Therefore, the polysilicon layer 3 is generally doped with hydrogen atoms, so that the polysilicon layer 3 also has a certain passivation effect.
[0042] S16, removing the polysilicon layer 3 disposed on the front and edge of the substrate 1.
[0043] S17, forming a second passivation layer 4 on a side of the doping layer 11 away from the substrate 1, forming Figure 2A The structure shown.
[0044] As a specific example, the material of the second passivation layer 4 is aluminum oxide, which is formed by plasma enhanced chemical vapor deposition. For example, a mixed gas of trimethylaluminum and oxygen or nitrogen oxide (i.e., a mixed gas of trimethylaluminum and oxygen, or a mixed gas of trimethylaluminum and nitrogen oxide) is introduced, and the reaction temperature is between 250° C. and 350° C., thereby forming the second passivation layer 4 of aluminum oxide.
[0045] S18, forming a first anti-reflection layer 5 on the second passivation layer 4, and forming a second anti-reflection layer 6 on the polysilicon layer 3, so as to form Figure 2B The first anti-reflection layer 5 and the second anti-reflection layer 6 can reflect the light entering the solar cell, so that more sunlight is absorbed by the solar cell, thereby improving the short-circuit current interruption of the cell and further improving the photoelectric conversion efficiency of the cell.
[0046] As a specific example, the material of the first anti-reflection layer 5 and the second anti-reflection layer 6 is silicon nitride, and is formed by plasma enhanced chemical vapor deposition. For example, a mixed gas of SiH4 and NH3 is introduced, and the reaction temperature is between 300° C. and 550° C., thereby forming the first anti-reflection layer 5 and the second anti-reflection layer 6 of silicon nitride.
[0047] S19, forming a first electrode 71 and a second electrode 72, wherein Figure 2C As shown, the first electrode 71 forms an ohmic contact with the doping layer 11 after passing through the first anti-reflection layer 5 and the second passivation layer 4 , and the second electrode 72 forms an ohmic contact with the polysilicon layer 3 after passing through the second anti-reflection layer 6 .
[0048] As a specific example, first, silver paste is coated on the first anti-reflection layer 5 by screen printing, and then sintering is performed, and the silver paste reacts with the first anti-reflection layer 5 and the second passivation layer 4 so that the silver paste penetrates the first anti-reflection layer 5 and the second passivation layer 4 to form an ohmic contact with the doping layer 11. Thereafter, silver paste is coated on the second anti-reflection layer 6 by screen printing, and then sintering is performed, and the silver paste reacts with the second anti-reflection layer 6 so that the silver paste penetrates the second anti-reflection layer 6 to form an ohmic contact with the polysilicon layer 3.
[0049] In addition, the first electrode 71 and the second electrode 72 may be formed by laser-assisted sintering.
[0050] S2, slicing the solar cell to form a plurality of sliced cells 10, wherein the sliced cell 10 includes end faces adjacent to the front and back surfaces, and at least one end face is a sliced section. For example, laser cutting or wire cutting is used to cut the entire cell.
[0051] S3, forming a passivation film 8 on the sliced section of the sliced battery 10 by using a vacuum coating method of physical vapor deposition, forming a Figure 2D The structure shown in FIG. It specifically includes the following steps:
[0052] S31, put the sliced battery 10 into a vacuum coating machine, and heat it after the vacuum coating machine is evacuated. Among them, the vacuum coating machine includes a heating cavity and a coating cavity. The heating cavity heats the substrate or magnetron sputtering and other physical methods to make the substrate gaseous (it should be noted that the gaseous passivation film material does not specifically refer to the vapor of the passivation film material, but also refers to the passivation film material molecules dissipated in the filling gas). The gaseous passivation film material enters the coating cavity and is cooled to form a film. The sliced battery 10 is located in the coating cavity of the vacuum coating machine. During the coating process, the coating cavity is evacuated and heated.
[0053] For example, a plurality of sliced batteries 10 are placed vertically and stacked in a material box so that the sliced sections of the sliced batteries 10 are located on the same horizontal plane and face upward, and then the material box and the sliced batteries 10 are placed together in a vacuum coating machine.
[0054] S32, injecting gaseous passivation film material into the coating chamber, the particles of the passivation film material adhere to the slice section, nucleate on the surface and gradually grow to form the passivation film 8. For example, the thickness of the passivation film 8 is 8nm to 110nm, and the material of the passivation film 8 can be one of magnesium fluoride, aluminum oxide, and silicon nitride.
[0055] As a specific example, the temperature of the coating chamber (i.e., the deposition temperature of the passivation film material) is 30°C to 220°C, preferably 30°C to 200°C; the chamber pressure of the coating chamber is 0Mbar to 110Mbar, preferably 0Mbar to 100Mbar. It should be noted that the lower the chamber pressure of the coating chamber (i.e., the higher the vacuum degree), the lower the evaporation temperature of the passivation film material, and the lower the deposition temperature of the vacuum coating machine during coating can be set.
[0056] The material of the passivation film 8 will also affect the deposition temperature of the passivation film 8. The higher the evaporation temperature of the passivation film 8 material, the higher the deposition temperature of the passivation film 8 under the same chamber pressure. For example, when the material of the passivation film 8 is magnesium fluoride, the deposition temperature is 30°C to 150°C; when the material of the passivation film 8 is aluminum oxide, the deposition temperature is 50°C to 220°C; when the material of the passivation film 8 is silicon nitride, the deposition temperature is 60°C to 220°C. Of course, in other possible implementations, the material of the passivation film 8 can also be other materials that can be physically vapor deposited.
[0057] In addition, before injecting the gaseous passivation film material into the coating chamber, nitrogen is injected into the coating chamber to purge the sliced section of the sliced battery 10 and to discharge the impurity gas in the vacuum coating machine to avoid affecting the formation of the passivation film 8. After injecting the gaseous passivation film material into the coating chamber (i.e., after the growth of the passivation film 8 is completed), nitrogen is injected into the coating chamber to purge the sliced section of the sliced battery 10 and to discharge the gaseous passivation film material as much as possible.
[0058] S33, using a mechanical claw to take out the material box and the sliced batteries 10 and then cool them down.
[0059] The present invention adopts a vacuum coating method of physical vapor deposition to form a passivation film 8 to passivate the sliced cross section of the sliced battery 10, and can control the deposition temperature of the passivation film 8 so that the deposition temperature of the passivation film 8 is relatively low (for example, 30°C to 220°C), which can effectively reduce the escape of doped hydrogen atoms in each film layer (such as the polysilicon layer 3, the second passivation layer 4, the first anti-reflection layer 5 and the second anti-reflection layer 6) in the sliced battery 10, so as to maintain the passivation effect of each film layer, thereby improving the open circuit voltage of the sliced battery 10.
[0060] The sliced cells with the same thickness (20 nm) of passivation film 8 prepared by different preparation processes were placed under standard illumination (specifically, the spectrum condition of air-mass 1.5 and the irradiance of 100 mW / cm 2 The open circuit voltage of the sliced battery is measured under the condition of irradiation with a light source and an ambient temperature of 25°C, as shown in the following table. Table 1
[0061] It should be noted that, in the sliced batteries in the above table, except for the material, deposition temperature and deposition process of the passivation film 8, the thickness and formation process of the other film layers are the same.
[0062] It can be seen from Experimental Examples 1 to 3 that when the passivation film 8 of the same material is deposited by the vacuum coating method of physical vapor deposition, the lower the deposition temperature, the higher the open circuit voltage of the solar cell. The reason is that in the process of depositing the passivation film 8, the lower the deposition temperature, the less the amount of hydrogen atoms in each passivation film layer in the solar cell escapes, the better the passivation effect, and the higher the open circuit voltage of the solar cell.
[0063] By comparing Experimental Example 2 with Comparative Example 1, it can be seen that for the passivation film 8 made of aluminum oxide, the minimum deposition temperature using PECVD is greater than the minimum deposition temperature using vacuum coating. Therefore, the vacuum coating method using physical vapor deposition can significantly reduce the minimum deposition temperature of the passivation film 8, thereby reducing the amount of hydrogen atoms escaping from each passivation film layer in the solar cell during the deposition of the passivation film 8, thereby increasing the open circuit voltage of the solar cell.
[0064] By comparing Experimental Example 3 and Comparative Example 2, it can be seen that for the passivation film 8 made of silicon nitride, the minimum deposition temperature using PECVD is greater than the minimum deposition temperature using vacuum coating. Therefore, the vacuum coating method using physical vapor deposition can significantly reduce the minimum deposition temperature of the passivation film 8, thereby reducing the amount of hydrogen atoms escaping from each passivation film layer in the solar cell during the deposition of the passivation film 8, thereby increasing the open circuit voltage of the solar cell.
[0065] The present disclosure also provides a sliced battery, which includes end faces adjacent to the front and back sides, at least one end face being a sliced section, and a passivation film is arranged on the sliced section. The passivation film is formed by vacuum coating using physical vapor deposition at a temperature of 30°C to 220°C.
[0066] In addition, it should be noted that in the examples of the present disclosure, the sliced battery 10 is taken as a TOPCon battery for illustration, but this is not a specific limitation of the present disclosure. In other embodiments, the sliced battery 10 can also be any type of sliced battery such as PERC (Passivated Emitter Rear Cell), TOPCon (Tunnel Oxide Passivated Contact), HJT (Hereto-junction with Intrinsic Thin-layer) battery and IBC (Interdigitated Back Contact, full back electrode contact, also called back contact) battery, and the present disclosure does not make specific limitations on this.
[0067] There are a few points to note:
[0068] (1) The drawings of the embodiments of the present disclosure only relate to the structures related to the embodiments of the present disclosure, and other structures may refer to the general design.
[0069] (2) For the sake of clarity, in the drawings used to describe the embodiments of the present disclosure, the thickness of layers or regions is enlarged or reduced, that is, these drawings are not drawn according to the actual scale.
[0070] (3) In the absence of conflict, the embodiments of the present disclosure and the features therein may be combined with each other to obtain new embodiments.
[0071] So far, the technical solutions of the present disclosure have been described in conjunction with the preferred embodiments shown in the accompanying drawings. However, it is easy for those skilled in the art to understand that the protection scope of the present disclosure is obviously not limited to these specific embodiments. Without departing from the principles of the present disclosure, those skilled in the art may make equivalent changes or substitutions to the relevant technical features, and the technical solutions after these changes or substitutions will fall within the protection scope of the present disclosure.
Claims
1. A method for preparing a sliced battery, characterized in that: include: Providing a sliced battery after slicing, wherein the sliced battery includes end faces adjacent to a front side and a back side, and at least one of the end faces is a sliced cross section; A passivation film is formed on the sliced section of the sliced battery by a vacuum coating method of physical vapor deposition, and the deposition temperature of the passivation film is 30° C. to 220° C.
2. The method for preparing a sliced battery according to claim 1, characterized in that: Forming a passivation film on the sliced section of the sliced battery comprises: The sliced battery is placed in a coating chamber of a vacuum coating machine, and the coating chamber is evacuated and then heated to increase temperature; A gaseous passivation film material is injected into the coating chamber to deposit a passivation film on the sliced cross section of the sliced battery.
3. The method for preparing a sliced battery according to claim 2, characterized in that: The cavity pressure of the coating cavity is 0 Mbar to 110 Mbar.
4. The method for preparing a sliced battery according to claim 1, characterized in that: The thickness of the passivation film is 8 nm to 110 nm.
5. The method for preparing a sliced battery according to claim 1, characterized in that: The material of the passivation film is one of magnesium fluoride, aluminum oxide and silicon nitride.
6. The method for preparing a sliced battery according to claim 2, characterized in that: The sliced batteries are placed vertically and stacked in a material box so that the sliced sections of the sliced batteries are located in the same horizontal plane and face upwards, and the material box and the sliced batteries are placed together in the coating cavity.
7. The method for preparing a sliced battery according to claim 2, characterized in that: Before injecting the gaseous passivation film material into the coating chamber, nitrogen is injected into the coating chamber to purge the sliced cross section of the sliced battery.
8. The method for preparing a sliced battery according to claim 2, characterized in that: After the gaseous passivation film material is injected into the coating chamber, nitrogen is injected into the coating chamber to purge the sliced cross section of the sliced battery.
9. A sliced battery, characterized in that: The sliced battery includes end faces adjacent to the front and back sides, at least one of the end faces is a slice section, a passivation film is provided on the slice section, and the passivation film is deposited at a temperature of 30°C to 220°C by vacuum coating using physical vapor deposition.
10. The sliced battery according to claim 9, characterized in that: The sliced cell is any one of a PERC cell, a TOPCon cell, a heterojunction cell or a back contact cell.
Citation Information
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