Double-pressure-point terahertz chip, assembly and preparation method

Abstract

The invention provides a dual-pressure-point terahertz chip, a dual-pressure-point terahertz assembly and a preparation method. The double-pressure-point structure of the double-pressure-point terahertz chip comprises a substrate, a signal bonding pad and two ground bonding pads symmetrically arranged on the two sides of the signal bonding pad. The signal bonding pad comprises a first signal bonding pad and a second signal bonding pad, the first signal bonding pad is close to the edge of the dual-pressure-point terahertz chip, and the second signal bonding pad is close to the interior of the dual-pressure-point terahertz chip; the width of the second signal bonding pad is smaller than that of the first signal bonding pad; the two ground bonding pads are special-shaped bonding pads, each of the two ground bonding pads comprises a first part and a second part which are connected with each other, the first part is close to the edge of the dual-pressure-point terahertz chip, one end of the second part is connected with the first part, and the other end of the second part is gradually close to the second signal bonding pad; the minimum distance between the second portions of the two ground bonding pads and the transverse central axis of the second signal bonding pad is smaller than the probe distance, and the maximum distance is larger than the probe distance. According to the invention, the parasitic inductance of the terahertz chip can be reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of terahertz chip design, and in particular to a dual-pressure-point terahertz chip, a component and a preparation method thereof. Background Art

[0002] With the widespread application of terahertz technology in wireless communications, radar imaging and other fields, terahertz monolithic integrated circuit chips have achieved rapid development. Terahertz chips are planar integrated circuits, and the chip interface generally uses coplanar waveguide (GSG) pressure points, where G stands for ground pressure point and S stands for signal pressure point. This pressure point is used for on-chip testing and gold wire bonding assembly.

[0003] In the terahertz frequency band (above 100GHz), the high-frequency microwave probe used for electrical performance testing has a very precise structure. Generally, the probe width does not exceed 20um, and the distance between adjacent needles is 50um. This design can ensure that the signal transmission loss on the path of the test probe to the chip pad is as low as possible, and the reflection is as small as possible, so that the electrical performance of the terahertz chip circuit can be accurately tested. In order to match the test probe, the width of the signal pad in the middle of a conventional terahertz chip is 35um, the gap between the signal pad and the ground pad is 20um, and the width of the ground pads on both sides is 80um. The ground pad of the terahertz chip is connected to the ground on the back of the chip through a grounding hole. The schematic diagram of the probe on-wafer test of the terahertz chip is shown in the figure below. Figure 1 .

[0004] Although the signal pads of conventional terahertz chips can meet the needs of precise testing, they are limited by the small pad size. When the chip needs to be interconnected with other microstrip transmission lines, it can only be achieved by bonding a bonding wire with a diameter of 25um. Figure 2 This single-filament bonding method is more likely to introduce larger parasitic inductance in the terahertz frequency band. Summary of the invention

[0005] The embodiments of the present invention provide a dual-pressure-point terahertz chip, a component and a preparation method to solve the problem of reducing parasitic inductance of the terahertz chip.

[0006] In a first aspect, an embodiment of the present invention provides a dual-pressure-point terahertz chip, comprising:

[0007] A substrate, a signal pad and two ground pads symmetrically arranged on both sides of the signal pad; the signal pad and the two ground pads are both arranged on the edge of the front side of the substrate;

[0008] The signal pad comprises a first signal pad and a second signal pad which are linearly connected in sequence in a transverse direction perpendicular to an edge of the front side of the substrate, the first signal pad is close to an edge of the dual-pressure-point terahertz chip, and the second signal pad is close to the inside of the dual-pressure-point terahertz chip; the width of the second signal pad is smaller than the width of the first signal pad;

[0009] The two ground pads are special-shaped pads, and both of the two ground pads include a first part and a second part connected to each other, the first part is close to the edge of the dual-pressure-point terahertz chip, one end of the second part is connected to the first part, and the other end of the second part gradually approaches the second signal pad; the minimum distance between the second parts of the two ground pads and the transverse center axis of the second signal pad is less than the probe spacing, and the maximum distance between the second parts of the two ground pads and the transverse center axis of the second signal pad is greater than the probe spacing;

[0010] The first signal pad is used for bonding with multiple bonding wires, and the second signal pad and the second parts of the two ground pads are used for cooperating with the probe; the width of the first signal pad is greater than the sum of the diameters of the multiple bonding wires.

[0011] In a second aspect, an embodiment of the present invention provides a dual-pressure-point terahertz component, comprising:

[0012] A microstrip transmission line, and the above-mentioned dual-pressure-point terahertz chip;

[0013] Wherein, the microstrip transmission line is bonded to the first signal pad through multiple bonding wires.

[0014] In a third aspect, an embodiment of the present invention provides a method for preparing a dual-pressure-point terahertz component, which is applied to prepare the dual-pressure-point terahertz component, comprising:

[0015] The dual-pressure-point terahertz chip is prepared;

[0016] Inserting a probe into the second part of the two ground pads and the second signal pad of the dual-pressure-point terahertz chip to test the dual-pressure-point terahertz chip;

[0017] After the test, multiple bonding wires are bonded to the first signal pad of the dual-pressure-point terahertz chip, and an external microstrip transmission line is connected to obtain a dual-pressure-point terahertz component.

[0018] The embodiment of the present invention provides a dual-pressure point terahertz chip, component and preparation method. By placing the first signal pad close to the edge of the dual-pressure point terahertz chip, it is convenient to bond with the microstrip transmission line. By setting the minimum distance between the second part of the two ground pads and the transverse center axis of the second signal pad to be less than the probe spacing, and the maximum distance between the second part of the two ground pads and the transverse center axis of the second signal pad to be greater than the probe spacing, it is convenient for the probe to test the dual-pressure point terahertz chip, and takes into account the requirements of dual-pressure point terahertz chip on-chip testing and multi-wire bonding assembly. The dual-pressure point terahertz chip has a simple structure. When the dual-pressure point terahertz chip needs to be tested on-chip, a probe can be used to directly pierce the two ground pads and the second signal pad with a small pressure point for testing; when the dual-pressure point terahertz chip needs to be bonded, the large pressure point of the first signal pad can ensure the bonding of multiple bonding wires. Compared with the single-wire bonding method of equal length, it is equivalent to connecting multiple inductors in parallel, thereby reducing parasitic inductance and improving transmission matching. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0020] Figure 1 It is a schematic diagram of the structure of the probe on-wafer test of the terahertz chip;

[0021] Figure 2 It is a schematic diagram of the structure of the single-wire bonding of the terahertz chip;

[0022] Figure 3a is a schematic structural diagram of a dual-pressure-point terahertz chip provided in an embodiment of the present invention;

[0023] Figure 3b is a schematic diagram of the structure of the on-wafer test of the dual-pressure-point terahertz chip provided by an embodiment of the present invention;

[0024] Figure 3c is a schematic diagram of the structure of double-wire bonding of a double-pressure-point terahertz chip provided in an embodiment of the present invention;

[0025] Figure 4a It is a schematic diagram of the structure of on-wafer testing of microwave millimeter wave chips;

[0026] Figure 4b It is a schematic diagram of the double-wire bonding structure of microwave millimeter wave chips.

[0027] Description of Reference Numerals

[0028] In the figure, 1, substrate; 2, first signal pad; 3, second signal pad; 4, ground pad; 41, first part; 42, second part; 5, probe; 6, microstrip transmission line; 7, bonding wire; 8, microwave millimeter wave chip signal pad; 9, microwave millimeter wave chip ground pad; 10, grounding hole; 11, terahertz chip ground pad; 12, terahertz chip signal pad. DETAILED DESCRIPTION

[0029] In order to enable people in the technical field to better understand the present solution, the technical solution in the embodiment of the present solution will be clearly described below in conjunction with the drawings in the embodiment of the present solution. Obviously, the described embodiment is an embodiment of a part of the present solution, not all of the embodiments. Based on the embodiments in the present solution, all other embodiments obtained by ordinary technicians in the field without creative work should fall within the scope of protection of the present solution.

[0030] The term "including" and any other variations in the specification and claims of this solution and the above drawings mean "including but not limited to", and is intended to cover non-exclusive inclusions and is not limited to the examples listed in the text. In addition, the terms "first" and "second" are used to distinguish different objects, not to describe a specific order.

[0031] In order to ensure good signal transmission, two compensation methods are generally used. One is to design a T-section matching measure at the microstrip transmission line position on the bonding side to offset the influence of the parasitic inductance of the bonding wire. The disadvantage is that the larger the parasitic inductance, the narrower the matching bandwidth. It is difficult to achieve ultra-wideband matching for the T-section matching of single-wire bonding, and special design is required for specific frequency bands. The other is to make the arc height of the bonding wire as low as possible and the arc length as short as possible during assembly to reduce the parasitic inductance. The disadvantage is that the assembly difficulty increases and the assembly success rate decreases.

[0032] The following is a detailed description of the implementation of the present invention in conjunction with the specific drawings:

[0033] Figure 3a A schematic diagram of the structure of a dual-pressure point terahertz chip provided by an embodiment of the present invention. Figure 3a , the dual-pressure-point terahertz chip includes:

[0034] A substrate 1, a signal pad and two ground pads 4 symmetrically arranged on both sides of the signal pad; the signal pad and the two ground pads 4 are both arranged at the edge of the front side of the substrate 1;

[0035] The signal pad includes a first signal pad 2 and a second signal pad 3 which are linearly connected in sequence in a transverse direction perpendicular to an edge of the front side of the substrate 1, the first signal pad 2 is close to the edge of the dual-pressure-point terahertz chip, and the second signal pad 3 is close to the inside of the dual-pressure-point terahertz chip; the width of the second signal pad 3 is smaller than the width of the first signal pad 2;

[0036] The two ground pads 4 are special-shaped pads, and both of the two ground pads 4 include a first portion 41 and a second portion 42 connected to each other, the first portion 41 is close to the edge of the dual-pressure-point terahertz chip, one end of the second portion 42 is connected to the first portion 41, and the other end of the second portion 42 gradually approaches the second signal pad 3; the minimum distance between the second portions 42 of the two ground pads 4 and the transverse central axis of the second signal pad 3 is less than the probe 5 spacing, and the maximum distance between the second portions 42 of the two ground pads 4 and the transverse central axis of the second signal pad 3 is greater than the probe 5 spacing;

[0037] The first signal pad 2 is used for bonding with the multiple bonding wires 7 , and the second signal pad 3 and the second portions 42 of the two ground pads 4 are used for cooperating with the probe 5 ; the width of the first signal pad 2 is greater than the sum of the diameters of the multiple bonding wires 7 .

[0038] The first signal pad 2 is close to the edge of the dual-pressure-point terahertz chip, so as to facilitate the bonding of the dual-pressure-point terahertz chip with the external microstrip transmission line 6 through the bonding wire 7 .

[0039] A signal line is arranged on the substrate 1 of the dual-pressure-point terahertz chip, and the second signal pad 3 is connected to the signal line for transmitting signals.

[0040] The width of the second signal pad 3 is smaller than that of the first signal pad 2, so that a gap is left between the second portion 42 and the second signal pad 3 to facilitate the testing of the probe 5. The specific value of the gap can be determined based on the width of the second signal pad 3, the spacing between the second portion 42 and the probe 5, etc., so as to meet the requirements of the probe 5 with a spacing of 50um for on-chip testing of the dual-pressure point terahertz chip.

[0041] The other end of the second part 42 gradually approaches the second signal pad 3, so as to gradually reduce the gap between the two second parts 42 and the second signal pad 3, so that the minimum distance from the transverse center axis of the second signal pad 3 to the second part 42 is less than 50um of the probe 5 spacing, and the maximum distance between the second parts 42 of the two ground pads 4 and the transverse center axis of the second signal pad 3 is greater than the probe 5 spacing, so that when the middle probe 5 is inserted into the transverse center axis of the second signal pad 3, the probes 5 on both sides are respectively located on the two second parts 42, and the probes 5 on both sides can be inserted into the second part 42, so that the probes 5 can perform on-chip testing on the dual-pressure point terahertz chip.

[0042] The width of the first signal pad 2 is greater than the sum of the diameters of the multiple bonding wires 7, so that the width of the first signal pad 2 is large enough, and the multiple bonding wires 7 are Figure 3a Arranged linearly in sequence in the vertical direction, the first signal pad 2 can accommodate all the bonding wires 7 , so that multiple bonding wires 7 can be bonded smoothly on the first signal pad 2 .

[0043] The embodiment of the present invention facilitates bonding with the microstrip transmission line 6 by placing the first signal pad 2 close to the edge of the dual-pressure-point terahertz chip, and by setting the minimum distance between the second part 42 of the two ground pads 4 and the transverse center axis of the second signal pad 3 to be less than the probe 5 spacing, and the maximum distance between the second part 42 of the two ground pads 4 and the transverse center axis of the second signal pad 3 to be greater than the probe 5 spacing, so that the probe 5 is convenient for testing the dual-pressure-point terahertz chip, and takes into account the requirements of dual-pressure-point terahertz chip on-chip testing and multi-wire bonding assembly. The dual-pressure-point terahertz chip has a simple structure. When the dual-pressure-point terahertz chip needs to be tested on-chip, the probe 5 can be used to directly pierce the two ground pads 4 and the second signal pad 3 with small pressure points for testing; when the dual-pressure-point terahertz chip needs to be bonded, the large pressure point of the first signal pad 2 can ensure the bonding of multiple bonding wires 7, which is equivalent to multiple inductors in parallel compared to the single-wire bonding method of equal length, thereby reducing parasitic inductance and improving transmission matching.

[0044] In a possible implementation manner, the number of bonding wires 7 is 2, and the bonding wires 7 are gold bonding wires.

[0045] In other possible implementations, the bonding wire may be other forms of bonding wire, such as bonding silver wire, bonding copper wire, bonding aluminum wire, etc. The present application embodiment is described by taking the bonding wire as an example.

[0046] In a possible implementation manner, the bonding gold wire is in an arch shape.

[0047] Setting the bonding wire into an arch shape is one of the key factors to ensure bonding quality and stable signal transmission. By controlling process parameters, optimizing equipment performance and strengthening material research, an arch shape that meets the requirements can be formed, thereby improving the reliability and performance of gold wire bonding.

[0048] In a possible implementation manner, the first portions of the two ground pads 4 are respectively provided with grounding holes 10 , and the first portions 41 are respectively grounded through the grounding holes 10 .

[0049] The grounding hole 10 serves as a ground connection point in the circuit and is connected to the ground pin of the dual-voltage-point terahertz chip to ensure the potential stability of the entire circuit system and prevent electrical interference and noise caused by potential difference.

[0050] In a possible implementation manner, the second signal pad 3 is in a rectangular shape.

[0051] The second signal pad 3 is rectangular in shape, which facilitates the connection between the second signal pad 3 and the signal line to transmit the signal.

[0052] In a possible implementation manner, one side of the first signal pad 2 close to the edge of the dual-pressure-point terahertz chip is flush with one side of the first portions 41 of the two ground pads 4 close to the edge of the dual-pressure-point terahertz chip.

[0053] The first signal pad 2 and the first portion 41 are flush with one side of the edge of the dual-pressure-point terahertz chip, which is convenient for installing the bonding wire 7 on the first signal pad 2 and for grounding the first portion 41 .

[0054] In a possible implementation manner, a side of the second signal pad 3 close to the inside of the dual-pressure-point terahertz chip is flush with a side of the second portions 42 of the two ground pads 4 close to the inside of the dual-pressure-point terahertz chip.

[0055] The second signal pad 3 and the second portion 42 are flush with one side of the inner portion of the dual-pressure-point terahertz chip, which is convenient for the probe 5 to perform a needle test on the dual-pressure-point terahertz chip.

[0056] In a possible implementation manner, the first signal pad 2 is square.

[0057] The first signal pad 2 is square in shape to facilitate installation of the bonding wire 7 and bonding of two bonding wires 7 to the first signal pad 2 .

[0058] The embodiment of the present application also discloses a dual-pressure-point terahertz component, including a microstrip transmission line 6 and the dual-pressure-point terahertz chip mentioned above;

[0059] The microstrip transmission line 6 is bonded to the first signal pad 2 through multiple bonding wires 7 .

[0060] After the microstrip transmission line 6 is bonded to the first signal pad 2 through the multi-bonding wires 7 , the microstrip transmission line 6 is connected to the dual-pressure-point terahertz chip, which facilitates signal transmission.

[0061] The embodiment of the present application further discloses a method for preparing a dual-pressure-point terahertz component, which is applied to prepare the dual-pressure-point terahertz component mentioned above, and the method comprises:

[0062] A dual-pressure-point terahertz chip is prepared;

[0063] Insert the probe 5 into the second part 42 of the two ground pads 4 and the second signal pad 3 of the dual-pressure-point terahertz chip to test the dual-pressure-point terahertz chip;

[0064] After the test, multiple bonding wires 7 are bonded to the first signal pad 2 of the dual-pressure-point terahertz chip, and connected to an external microstrip transmission line 6 to prepare a dual-pressure-point terahertz component.

[0065] According to the above method, the first signal pad 2, the second signal pad 3, the ground pad 4, etc. are arranged on the substrate 1 in sequence according to the requirements of the probe 5 spacing, bonding, etc., to prepare a dual-pressure point terahertz chip.

[0066] According to the data of the spacing between the probes 5, the data of the spacing between the probes 5 is located between the minimum distance and the maximum distance from the second part 42 of the ground pad 4 to the transverse center axis of the second signal pad 3, so that the probes 5 can be smoothly inserted into the second part 42 and the second signal pad 3, and the dual-pressure-point terahertz chip is tested by the probes 5, so that the dual-pressure-point terahertz chip can be tested on-chip.

[0067] After the test is completed, since the first signal pad 2 is located at the edge of the dual-pressure-point terahertz chip, and the length and width of the first signal pad 2 are sufficient to accommodate the multi-bonding wire 7, the multi-bonding wire 7 can be installed on the first signal pad 2, so that the dual-pressure-point terahertz chip is connected to the external microstrip transmission line 6 through the multi-bonding wire 7, and finally a dual-pressure-point terahertz component is obtained.

[0068] The first signal pad 2 of the present application is close to the edge of the dual-pressure point terahertz chip, which is convenient for bonding with the microstrip transmission line 6. By setting the minimum distance between the second part 42 of the two ground pads 4 and the transverse center axis of the second signal pad 3 to be less than the probe 5 spacing, and the maximum distance between the second part 42 of the two ground pads 4 and the transverse center axis of the second signal pad 3 to be greater than the probe 5 spacing, it is convenient for the probe 5 to test the dual-pressure point terahertz chip, taking into account the requirements of dual-pressure point terahertz chip on-chip testing and multi-wire bonding assembly. The dual-pressure point terahertz chip has a simple structure. When the dual-pressure point terahertz chip needs to be tested on-chip, the probe 5 can be used to directly pierce the two ground pads 4 and the second signal pad 3 with small pressure points for testing; when the dual-pressure point terahertz chip needs to be bonded, the large pressure point of the first signal pad 2 can ensure the bonding of multiple bonding wires 7. Compared with the single-wire bonding method of equal length, it is equivalent to connecting multiple inductors in parallel, thereby reducing parasitic inductance and improving transmission matching.

[0069] The above describes the specific implementation of the scheme. In the actual process, experimental analysis is carried out based on specific embodiments to verify and illustrate the effect of the above scheme.

[0070] The pressure point test of microwave millimeter wave circuit chips below the 100GHz frequency band generally adopts an on-wafer test probe 5 with a needle spacing of 100um and a probe width of about 40um. The corresponding test pressure point dimensions are as follows: the width of the microwave millimeter wave circuit chip signal pad 8 in the middle is 70um, the width of the microwave millimeter wave circuit chip ground pads 9 on both sides is 100um, and the gap between the microwave millimeter wave circuit chip signal pad 8 and the microwave millimeter wave circuit chip ground pad 9 is 40um. Since the diameter of the bonding wire 7 is 25um, the microwave millimeter wave circuit chip signal pad 8 with a length and width of 70um can accommodate two bonding wires 7, which can meet the requirements of double-wire bonding. However, since the spacing of the on-wafer test probe 5 in the terahertz frequency band is 50um, the setting of the microwave millimeter wave circuit chip signal pad 8 and the microwave millimeter wave circuit chip ground pad 9 cannot adapt to the on-wafer test probe 5 in the terahertz frequency band. Schematic diagram of on-wafer testing and double-wire bonding of microwave millimeter wave circuit chips Figure 4a , Figure 4b .

[0071] The pressure point test of terahertz circuit chips above the 100GHz frequency band generally uses an on-wafer test probe 5 with a needle spacing of 50um and a probe 5 width of about 20um. The corresponding test pressure point dimensions are as follows: the width of the middle terahertz chip signal pad 12 is 35um, the width of the terahertz chip ground pads 11 on both sides is 80um, and the gap between the terahertz chip signal pad 12 and the terahertz chip ground pad 11 is 20um. The setting of a terahertz chip signal pad 12 with a length and width of 35um and two terahertz chip ground pads 11 can adapt to the on-wafer test probe 5 of the terahertz frequency band (with a spacing of 50um), but can only meet the requirements of single-wire bonding. The width dimension of the terahertz chip signal pad 12 cannot accommodate two bonding wires 7. The schematic diagram of the on-wafer test and single-wire bonding of the terahertz chip probe 5 is shown in the figure. Figure 1 , Figure 2 .

[0072] Combining the advantages of the respective pressure points of the microwave millimeter wave chip and the terahertz circuit chip, the length and width of the microwave millimeter wave chip signal pad 8 are sufficient to accommodate the bonding of two bonding wires 7, and the terahertz chip signal pad 12 and the terahertz chip ground pads 11 on both sides meet the test requirements of the terahertz chip test probe 5 (spacing 50um). The present invention cascades the two pressure points to obtain a dual-pressure point terahertz chip, and the first signal pad 2 is a large-size pressure point with a length and width of 70um, close to the edge of the dual-pressure point terahertz chip, which is convenient for double wire bonding; the gap between the first part 41 and the first signal pad 2 is 40um, the second signal pad 3 is a small-size pad with a length and width of 35um, close to the inside of the chip, and the gap between the second part 42 and the second signal pad 3 is 20um. The second signal pad 3 cooperates with the two second parts 42, so that the three probes 5 can be sequentially inserted into the second part 42, the second signal pad 3 and another second part 42, which is convenient for testing. The structural schematic diagram of the dual-pressure point terahertz chip is shown as follows Figure 3a Finally, a dual-pressure-point terahertz chip was developed that can meet both the requirements of direct probe testing in the terahertz frequency band and the requirements of dual-wire bonding assembly. Figure 3b , Figure 3c .

[0073] The dual-pressure-point terahertz chip has a simple structure. When the dual-pressure-point terahertz chip needs to be tested on a chip, a probe 5 can be used to directly pierce the second portion 42 of the two ground pads 4 and the second signal pad 3 with a small pressure point for testing; when the dual-pressure-point terahertz chip needs to be bonded, the large pressure point of the first signal pad 2 can ensure the bonding of two bonding wires 7. Compared with the single-wire bonding method of equal length, it is equivalent to two inductors in parallel, thereby reducing the parasitic inductance by nearly half and improving the transmission matching.

[0074] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A dual-pressure-point terahertz chip, characterized in that: include: A substrate, a signal pad and two ground pads symmetrically arranged on both sides of the signal pad; the signal pad and the two ground pads are both arranged at the edge of the front side of the substrate; The signal pad comprises a first signal pad and a second signal pad which are linearly connected in sequence in a transverse direction perpendicular to an edge of the front side of the substrate, the first signal pad is close to an edge of the dual-pressure-point terahertz chip, and the second signal pad is close to the inside of the dual-pressure-point terahertz chip; the width of the second signal pad is smaller than the width of the first signal pad; The two ground pads are special-shaped pads, and both of the two ground pads include a first part and a second part connected to each other, the first part is close to the edge of the dual-pressure-point terahertz chip, one end of the second part is connected to the first part, and the other end of the second part gradually approaches the second signal pad; the minimum distance between the second parts of the two ground pads and the transverse center axis of the second signal pad is less than the probe spacing, and the maximum distance between the second parts of the two ground pads and the transverse center axis of the second signal pad is greater than the probe spacing; The first signal pad is used for bonding with multiple bonding wires, and the second signal pad and the second parts of the two ground pads are used for cooperating with the probe; the width of the first signal pad is greater than the sum of the diameters of the multiple bonding wires.

2. The dual-pressure-point terahertz chip according to claim 1, characterized in that: The number of the bonding wires is 2, and the bonding wires are gold bonding wires.

3. The dual-pressure-point terahertz chip according to claim 2, characterized in that: The bonding gold wire is in an arch shape.

4. The dual-pressure-point terahertz chip according to claim 1, characterized in that: The first parts of the two ground pads are respectively provided with grounding holes, and the first parts are respectively grounded through the grounding holes.

5. The dual-pressure-point terahertz chip according to claim 1, characterized in that: The second signal pad is in a rectangular shape.

6. The dual-pressure-point terahertz chip according to claim 1, characterized in that: One side of the first signal pad close to the edge of the dual-pressure-point terahertz chip is flush with one side of the first portion of the two ground pads close to the edge of the dual-pressure-point terahertz chip.

7. The dual-pressure-point terahertz chip according to claim 1, characterized in that: A side of the second signal pad close to the interior of the dual-pressure-point terahertz chip is flush with a side of the second portion of the two ground pads close to the interior of the dual-pressure-point terahertz chip.

8. The dual-pressure-point terahertz chip according to claim 1, characterized in that: The first signal pad is square.

9. A dual-pressure-point terahertz component, comprising a microstrip transmission line and a dual-pressure-point terahertz chip according to any one of claims 1 to 8; in, The microstrip transmission line is bonded to the first signal pad through multiple bonding wires.

10. A method for preparing a dual-pressure-point terahertz component, characterized in that: Applied to preparing the dual-pressure-point terahertz component as claimed in claim 9, the method comprising: The dual-pressure-point terahertz chip is prepared; Inserting a probe into the second part of the two ground pads and the second signal pad of the dual-pressure-point terahertz chip to test the dual-pressure-point terahertz chip; After the test, multiple bonding wires are bonded to the first signal pad of the dual-pressure-point terahertz chip, and connected to an external microstrip transmission line to prepare a dual-pressure-point terahertz component.

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