Perovskite solar cell module and preparation method thereof

Abstract

The invention belongs to the technical field of solar cell production, and particularly relates to a perovskite solar cell module and a preparation method thereof. The solar cell comprises a metal counter electrode, a plurality of sub-cells and a transparent conductive substrate which are sequentially arranged from top to bottom, the sub-cells are connected in series side by side, a plurality of counter electrode layer partitions are arranged on the metal counter electrode at intervals, two sub-cells are arranged between every two adjacent counter electrode layer partitions, and a plurality of conductive layer partitions are arranged on the transparent conductive substrate at intervals. Two sub-cells are arranged between two adjacent conducting layer partitions, and the counter electrode layer partition and the conducting layer partition which are adjacent are located on the two sides of the same sub-cell respectively; and the plurality of sub-cells are formed by alternately arranging a plurality of NIP type perovskite sub-cells and a plurality of PIN type perovskite sub-cells. According to the invention, the high dependence of the traditional tandem perovskite solar cell module preparation on the laser etching precision is overcome, the yield of the module can be effectively improved, the preparation process is further simplified, and the area of the sub-cell can be effectively increased at the same time.

Description

Technical Field

[0001] The invention belongs to the technical field of solar cell production, and in particular relates to a perovskite solar cell assembly and a preparation method thereof. Background Art

[0002] With the continuous deepening of research on perovskite solar cells, optimizing the structure and preparation process of large-area perovskite solar cell modules has become the key to the industrial application of the cell from the laboratory. The existing perovskite solar cell module structure is usually a Z-type series connection. The preparation of this structure cell module requires multiple precise laser etching processes. For example, the Chinese patent with publication number CN112952009A discloses a perovskite cell module and its preparation method and application. The preparation method of the application includes: forming a bottom electrode layer on a substrate and performing P1 laser etching on it; sequentially forming a first carrier transport layer, a perovskite absorption layer, and a second carrier transport layer on the bottom electrode layer and the P1 etching area, and performing P2 defocused laser etching on the first carrier transport layer, the perovskite absorption layer, and the second carrier transport layer based on a preset spacing between the P1 etching area and the P2 etching area; forming a top electrode layer on the second carrier transport layer and the P2 etching area, and performing P3 defocused laser etching on the top electrode layer, the first and second carrier transport layers, and the perovskite absorption layer based on a preset spacing between the P1 etching area and the P3 etching area.

[0003] The technical solution disclosed in this application is also the main technical solution currently used in the preparation of large-area perovskite solar cell modules. This technical solution requires at least three laser etchings, P1, P2, and P3, and has high requirements on the power, etching rate, and etching accuracy of the laser used. Otherwise, short circuits or open circuits are easily formed. At the same time, in order to achieve series connection of adjacent sub-cells, a large dead zone area is easily formed. Summary of the invention

[0004] In order to overcome the defects in the prior art, the present invention provides a perovskite solar cell module and a preparation method thereof. The present invention reduces the laser etching steps and effectively reduces the dead zone area of ​​the cell.

[0005] To achieve one of the above purposes, the present invention adopts the following technical solution:

[0006] A perovskite solar cell assembly comprises a metal counter electrode, a plurality of sub-cells connected in series in parallel, and a transparent conductive substrate, wherein a plurality of counter electrode layer partitions are arranged at intervals on the metal counter electrode, and two sub-cells are arranged between two adjacent counter electrode layer partitions; a plurality of conductive layer partitions are arranged at intervals on the transparent conductive substrate, and two sub-cells are arranged between two adjacent conductive layer partitions, and each conductive layer partition and its adjacent counter electrode layer partition are respectively located on both sides of the same sub-cell; and the plurality of sub-cells are composed of a plurality of NIP-type perovskite sub-cells and a plurality of PIN-type perovskite sub-cells arranged alternately.

[0007] Preferably, the spacing between two adjacent conductive layers is 8 mm to 20 mm.

[0008] Preferably, the transparent conductive substrate is composed of a substrate layer and a conductive layer, the sub-cells and the conductive layer partitions are both arranged on the conductive layer, the two sub-cells in two adjacent conductive layer partitions are connected in series through the conductive layer, and the sub-cells on both sides of a single conductive layer partition are connected in series through metal counter electrodes; wherein a counter electrode layer partition is arranged at the center of each two adjacent conductive layer partitions.

[0009] Preferably, the NIP-type perovskite sub-cell is composed of a top hole transport layer, a perovskite light absorption layer and a bottom electron transport layer from top to bottom; the PIN-type perovskite sub-cell is composed of a top electron transport layer, a perovskite light absorption layer and a bottom hole transport layer from top to bottom.

[0010] To achieve the second objective above, the present invention provides a method for preparing a perovskite solar cell module, comprising the following steps:

[0011] S1. Forming (laser etching) N conductive layer partitions on the conductive layer of the transparent conductive substrate to form a conductive layer that can accommodate 2N or 2N-1 sub-cells, where N is a positive integer greater than 1;

[0012] S2. Preparation of the bottom electron transport layer in the NIP-type perovskite subcell: The bottom electron transport layer is prepared on the NIP-type charge collection region of the conductive layer by using spray pyrolysis or atomic layer deposition or magnetron sputtering technology;

[0013] S3. Preparation of the bottom hole transport layer in the PIN-type perovskite subcell: The bottom hole transport layer is prepared on the PIN-type charge collection region of the conductive layer by using spray pyrolysis or atomic layer deposition or magnetron sputtering technology;

[0014] S4, preparing a perovskite light absorbing layer: preparing a perovskite light absorbing layer on the surface of the bottom electron transport layer and the surface of the bottom hole transport layer by spin coating, coating or thermal evaporation technology;

[0015] S5. Preparation of the top hole transport layer in the NIP-type perovskite subcell: preparing the top hole transport layer on the perovskite light absorption layer of the NIP-type perovskite subcell by atomic layer deposition, vacuum evaporation or magnetron sputtering technology;

[0016] S6. Preparation of the top electron transport layer in the PIN-type perovskite subcell: preparing the top electron transport layer on the perovskite light absorption layer of the PIN-type perovskite subcell by atomic layer deposition, vacuum evaporation or magnetron sputtering technology;

[0017] S7. Prepare a metal counter electrode: prepare a metal counter electrode on the surface of the top hole transport layer and the surface of the top electron transport layer, and form N-1 counter electrode layer partitions on the metal counter electrode to obtain a perovskite solar cell module.

[0018] There is no order of precedence for the above steps S5 and S6.

[0019] Preferably, in step S1, the transparent conductive substrate with the conductive layer partition formed is immersed in a potassium dichromate washing solution for 20 minutes, taken out and rinsed with clean water continuously, blown dry, immersed in the washing solution for 30 minutes of ultrasound, taken out and rinsed with clean water and deionized water, and then ultrasonically cleaned and dried with acetone and isopropanol in turn to remove dust, oil stains and surface organic matter on the surface of the transparent conductive substrate to ensure the cleanliness of the conductive layer.

[0020] Preferably, in step S7, a counter electrode layer partition is provided at the center of every two adjacent conductive layer partitions.

[0021] Preferably, the conductive layer partitions and the counter electrode layer partitions are both strip-shaped.

[0022] Preferably, the method comprises the following steps:

[0023] S1. Form (laser etch) N conductive layer partitions on the conductive layer of the transparent conductive substrate to form a conductive layer that can accommodate 2N or 2N-1 sub-batteries, where N is a positive integer greater than 1; and soak the transparent conductive substrate with the conductive layer partitions in a potassium dichromate washing solution for 20 minutes, take it out and rinse it with clean water continuously, blow it dry, soak it in the washing solution for 30 minutes, take it out and rinse it with clean water and deionized water, and then ultrasonically clean and dry it with acetone and isopropanol in turn;

[0024] S2. Preparation of the bottom electron transport layer in the NIP-type perovskite subcell: Place the transparent conductive substrate covered with the mask on a hot plate and heat it to 450°C for 20 minutes. Under oxygen protection, spray 7 ml of titanium dioxide precursor solution evenly onto the transparent conductive substrate and keep it warm for 30 minutes to obtain a dense titanium dioxide electron transport layer with a thickness of 30 nm.

[0025] S3. Preparation of the bottom hole transport layer in the PIN-type perovskite subcell: Place the transparent conductive substrate covered with the mask on a hot plate and heat it to 390°C for 20 minutes. Under oxygen protection, spray 6 ml of nickel oxide precursor solution evenly onto the transparent conductive substrate and keep it warm for 30 minutes to obtain a dense nickel oxide hole transport layer with a thickness of 20 nm.

[0026] S4, preparation of perovskite light absorbing layer: 200 μl of methylamine perovskite precursor solution was evenly dripped on a transparent conductive substrate prepared with a titanium dioxide electron transport layer and a nickel oxide hole transport layer, and two-stage spin coating was adopted, 1000 rpm for 10 seconds and then 5000 rpm for 30 seconds. After the spin coating, the transparent conductive substrate covered with the perovskite precursor film was immediately placed in a self-made closed chamber, and the chamber was quickly evacuated to 10 Pa. The transparent conductive substrate was taken out and placed on a hot plate at 100°C for 30 minutes to obtain a brown perovskite film on the transparent conductive substrate;

[0027] S5. Preparation of the top hole transport layer in the NIP-type perovskite subcell: Place the transparent conductive substrate covered with the mask in step S4 into the magnetron sputtering chamber and evacuate to 10 -4 Pa, control the flow rate of Ar and O2, set the sputtering pressure to 0.3Pa, set the RF sputtering power to 150W after the pressure stabilizes, open the baffle of the target material, start sputtering, and obtain a nickel oxide hole transport layer with a thickness of 20nm;

[0028] S6. Preparation of the top electron transport layer in the PIN-type perovskite subcell: Place the transparent conductive substrate covered with the mask into the thermal evaporation chamber and evacuate to 10 -4 Pa below The deposition rate deposited a fullerene C60 electron transport layer with a thickness of 15 nm;

[0029] S7. Preparation of metal counter electrode: Cover the transparent conductive substrate with nickel oxide hole transport layer and C60 electron transport layer with a mask, put it into the thermal evaporation chamber, and evacuate to 10 -4 Pa below A Ag metal counter electrode with a thickness of 100 nm is deposited at a deposition rate; a counter electrode layer partition with a width of 40 μm is etched on the Ag (silver) metal counter electrode using a pulsed laser with a spot size of 25 μm, and a counter electrode layer partition is provided at the center of every two adjacent conductive layer partitions to obtain a perovskite solar cell module.

[0030] Preferably, in step S7, the pulse energy is 10 μJ, the pulse frequency is 35 KHz, and the etching speed is 800 mm / s.

[0031] The advantages of the present invention are:

[0032] (1) The present invention prepares NIP-type and PIN-type perovskite solar cells on a transparent conductive substrate at intervals, and two sub-cells in the transparent substrate conductive layer partition are connected in series through the conductive layer, and the two sub-cells separated by the conductive layer partition are connected in series through the metal counter electrode, thereby forming a perovskite solar cell module with a plurality of sub-cells in series. It is only necessary to set conductive layer partitions on the conductive layer of the transparent substrate and the metal counter electrode layer to form a series structure perovskite solar cell module, and the design of alternating arrangement of NIP-type and PIN-type perovskite sub-cells effectively avoids the cumbersome process of laser etching each sub-cell functional layer in the traditional Z-type series perovskite cell module, greatly reduces the number of laser etching steps, and effectively reduces the dead zone area of ​​the cell.

[0033] (2) The perovskite solar cell module prepared by the present invention overcomes the high dependence of the preparation of traditional series perovskite solar cell modules on laser etching accuracy, can effectively improve the yield rate of the module, further simplify the preparation process, and at the same time effectively increase the area of ​​the sub-cell.

[0034] (3) The present invention uses perovskite material as a light-absorbing layer, which can effectively absorb sunlight in the wavelength range of 400nm to 800nm, and sets an electron transport layer between the perovskite light-absorbing layer and the cathode, and sets a hole transport layer between the perovskite light-absorbing layer and the anode, thereby improving the extraction of electrons and holes, thereby improving the photoelectric conversion efficiency of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 This is a schematic diagram of the structure of a perovskite solar cell module composed of 2N-1 sub-cells of the present invention.

[0036] Figure 2 This is a schematic diagram of the structure of a perovskite solar cell module composed of 2N sub-cells of the present invention.

[0037] Figure 3 It is a schematic top view of the transparent conductive substrate after etching the conductive layer of the present invention.

[0038] Figure 4 It is a schematic diagram of the structure of the transparent conductive substrate after etching the conductive layer of the present invention, and 2N-1 sub-cells are arranged on the transparent conductive substrate.

[0039] Figure 5 It is a schematic diagram of the structure of the transparent conductive substrate after etching the conductive layer of the present invention, and 2N sub-batteries are arranged on the transparent conductive substrate.

[0040] Figure 6 It is a cross-sectional schematic diagram of the bottom electron transport layer and the bottom hole transport layer of the perovskite solar cell module of the present invention.

[0041] Figure 7It is a schematic top view of the metal counter electrode layer of the present invention.

[0042] Figure 8 This is a current-voltage curve of the perovskite solar cell module prepared in Example 1.

[0043] The meanings of the symbols in the figure are as follows:

[0044] 1-transparent conductive substrate, 11-substrate layer, 12-conductive layer, 2-conductive layer partition, 31-bottom electron transport layer, 32-top hole transport layer, 41-bottom hole transport layer, 42-top electron transport layer, 5-perovskite light absorbing layer, 6-metal counter electrode, 7-counter electrode layer partition. DETAILED DESCRIPTION

[0045] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in the field without making creative work are within the scope of protection of the present invention.

[0046] like Figure 1-7 As shown, a perovskite solar cell assembly includes a transparent conductive substrate 1, a conductive layer partition 2, a bottom electron transport layer 31, a top hole transport layer 32, a bottom hole transport layer 41, a top electron transport layer 42, a perovskite light absorbing layer 5, a metal counter electrode 6 and a counter electrode layer partition 7. The transparent conductive substrate 1 is composed of a substrate layer 11 and a conductive layer 12 distributed up and down.

[0047] A plurality of conductive layer partitions 2 are arranged on the conductive layer 12, and two adjacent conductive layer partitions 2 contain two sub-cells, and the sub-cells are composed of NIP-type perovskite sub-cells and PIN-type perovskite sub-cells. A plurality of NIP-type perovskite sub-cells and a plurality of PIN-type perovskite sub-cells are alternately arranged on the conductive layer 12, and adjacent sub-cells are connected by the conductive layer 12 and the metal counter electrode 6 to form a series structure component.

[0048] Example 1

[0049] A method for preparing a perovskite solar cell assembly comprises the following steps:

[0050] Step 1: Cut the 15Ω / □ FTO transparent conductive substrate into 6.5cm×6.0mm size, and use laser to etch the conductive layer 2 to form 5 40μm wide P1 etching lines, ensuring that both sides of the P1 etching line are completely insulated. The P1 etching line is the conductive layer partition 2, and its top view and cross-sectional schematic diagram are shown in FIG. Figure 3-Figure 5 As shown;

[0051] Step 2, soak the transparent conductive substrate 1 with the P1 etched line in a potassium dichromate cleaning solution for 20 minutes, take it out and rinse it with clean water continuously, blow it dry, soak it in the cleaning solution for 30 minutes, take it out and rinse it with clean water and deionized water, then ultrasonically clean and dry it with acetone and isopropanol in turn;

[0052] Step 3, preparation of the bottom electron transport layer 31 in the NIP type perovskite subcell: place the transparent conductive substrate 1 covered with the mask on a hot table and heat it to 450°C for 20 minutes. Under oxygen protection, 7 ml of titanium dioxide precursor solution is evenly sprayed onto the transparent conductive substrate 1 and kept warm for 30 minutes to obtain a dense titanium dioxide electron transport layer with a thickness of about 30 nm.

[0053] Step 4, preparation of the bottom hole transport layer 41 in the PIN-type perovskite subcell: place the transparent conductive substrate 1 covered with the mask on a hot table and heat it to 390°C for 20 minutes. Under oxygen protection, 6 ml of nickel oxide precursor solution is evenly sprayed onto the transparent conductive substrate 1 and kept warm for 30 minutes to obtain a dense nickel oxide hole transport layer with a thickness of about 20 nm.

[0054] Step 5, preparation of perovskite light absorbing layer 5: 200 μl of methylamine perovskite precursor solution is evenly dripped on the transparent conductive substrate 1, and two-stage spin coating is adopted, 1000 rpm for 10 seconds and then 5000 rpm for 30 seconds. After the spin coating, the transparent conductive substrate 1 covered with the perovskite precursor film is immediately placed in a self-made closed chamber, and the chamber is quickly evacuated to 10 Pa. The transparent conductive substrate 1 is taken out and placed on a hot plate at 100° C. and heated for 30 minutes to obtain a brown perovskite film;

[0055] Step 6: Preparation of the top hole transport layer 32 in the NIP type perovskite subcell: Place the transparent conductive substrate 1 covered with the mask into the magnetron sputtering chamber and evacuate to 10 -4 Pa, control the Ar and O2 gas flow rates, set the sputtering pressure to 0.3Pa, set the RF sputtering power to 150W after the pressure stabilizes, open the baffle of the target material, start sputtering, and control the sputtering thickness of the nickel oxide hole transport layer to 20nm;

[0056] Step 7, preparation of the top electron transport layer 42 in the PIN-type perovskite subcell: Place the transparent conductive substrate 1 covered with the mask into a thermal evaporation chamber and evacuate to 10 -4 Pa below The deposition rate was such that a C60 electron transport layer of about 15 nm thick was deposited;

[0057] Step 8: Prepare the metal counter electrode 6: Place the transparent conductive substrate 1 covered with the mask into the thermal evaporation chamber and evacuate to 10 -4 Pa below The deposition rate deposited a Ag metal counter electrode of about 100 nm thickness;

[0058] Step 9: Use a pulsed laser with a spot size of 25 μm to etch a P2 etching line 10 with a width of 40 μm on the Ag layer. The pulse energy is 10 μJ, the pulse frequency is 35 KHz, and the etching speed is 800 mm / s. The P2 etching line is the partition 7 of the electrode layer.

[0059] A 6.5 cm×6.0 cm series perovskite solar cell module is obtained by Example 1, which is made up of 9 sub-cells connected in series, and the aperture area of ​​the module is 30.80 cm 2 , effective area is 30.69cm 2 The active area width of a single subcell is 6.2mm, the dead zone width is 40μm, and the geometric fill factor reaches 99.36%. Under the standard simulated light source of one sun (AM1.5), the open circuit voltage of its 9 subcells is measured to be 10.21V, and the short-circuit current density is 2.75mA / cm 2 , the fill factor is 0.781, the effective area efficiency is 21.93%, and the current-voltage (IV) curve is as follows Figure 8 shown.

[0060] The drawings of the present invention focus on illustrating the structural design of a transparent conductive substrate 1, a bottom electron transport layer 31, a bottom hole transport layer 41, a perovskite light absorbing layer 5, a top hole transport layer 32, a top electron transport layer 42 and a metal counter electrode 6 of a perovskite solar cell module, and do not involve the description of the drawings of the inactive area at the edge of the module and the module packaging area.

[0061] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A perovskite solar cell module, characterized in that: The invention comprises a metal counter electrode (6) arranged in sequence from top to bottom, a plurality of sub-cells connected in parallel in series, and a transparent conductive substrate (1); a plurality of counter electrode layer partitions (7) are arranged at intervals on the metal counter electrode (6); two sub-cells are arranged between two adjacent counter electrode layer partitions (7); a plurality of conductive layer partitions (2) are arranged at intervals on the transparent conductive substrate (1); two sub-cells are arranged between two adjacent conductive layer partitions (2); and each conductive layer partition (2) and its adjacent counter electrode layer partition (7) are respectively located on two sides of the same sub-cell; and the plurality of sub-cells are composed of a plurality of NIP-type perovskite sub-cells and a plurality of PIN-type perovskite sub-cells arranged alternately.

2. A perovskite solar cell assembly according to claim 1, characterized in that: The distance between two adjacent conductive layer partitions (2) is 8 mm to 20 mm.

3. A perovskite solar cell assembly according to claim 1, characterized in that: The transparent conductive substrate (1) is composed of a substrate layer (11) and a conductive layer (12); the sub-cells and the conductive layer partition (2) are both arranged on the conductive layer (12); the two sub-cells in two adjacent conductive layer partitions (2) are connected in series via the conductive layer (12); and the sub-cells on both sides of a single conductive layer partition (2) are connected in series via a metal counter electrode (6); wherein a counter electrode layer partition (7) is arranged at the center of each two adjacent conductive layer partitions (2).

4. A perovskite solar cell assembly according to claim 1, characterized in that: The NIP-type perovskite sub-cell is composed of a top hole transport layer (32), a perovskite light absorption layer (5) and a bottom electron transport layer (31) from top to bottom; the PIN-type perovskite sub-cell is composed of a top electron transport layer (42), a perovskite light absorption layer (5) and a bottom hole transport layer (41) from top to bottom.

5. A method for preparing a perovskite solar cell module according to any one of claims 1 to 4, characterized in that: The steps include: S1. Forming N conductive layer partitions (2) on the conductive layer (12) of the transparent conductive substrate (1) to form a conductive layer (12) capable of accommodating 2N or 2N-1 sub-cells, wherein N is a positive integer greater than 1; S2. Preparation of a bottom electron transport layer (31) in a NIP-type perovskite subcell: preparing the bottom electron transport layer (31) on the NIP-type charge collection region of the conductive layer (12) by using spray pyrolysis or atomic layer deposition or magnetron sputtering technology; S3. Preparation of a bottom hole transport layer (41) in a PIN-type perovskite subcell: preparing the bottom hole transport layer (41) on the PIN-type charge collection region of the conductive layer (12) by using spray pyrolysis or atomic layer deposition or magnetron sputtering technology; S4, preparing a perovskite light absorbing layer (5): preparing a perovskite light absorbing layer (5) on the surface of the bottom electron transport layer (31) and the surface of the bottom hole transport layer (41) by spin coating, coating or thermal evaporation technology; S5. Preparation of a top hole transport layer (32) in a NIP-type perovskite subcell: preparing a top hole transport layer (32) on the perovskite light absorption layer (5) of the NIP-type perovskite subcell by using atomic layer deposition, vacuum evaporation or magnetron sputtering technology; S6. Preparation of a top electron transport layer (42) in a PIN-type perovskite subcell: preparing a top electron transport layer (42) on the perovskite light absorption layer (5) of the PIN-type perovskite subcell by using atomic layer deposition, vacuum evaporation or magnetron sputtering technology; S7. Prepare a metal counter electrode (6): prepare a metal counter electrode (6) on the surface of the top hole transport layer (32) and the surface of the top electron transport layer (42), and form N-1 counter electrode layer partitions (7) on the metal counter electrode (6) to obtain a perovskite solar cell module.

6. The method for preparing a perovskite solar cell assembly according to claim 5, characterized in that: In step S1, the transparent conductive substrate (1) formed with the conductive layer partition (2) is immersed in a potassium dichromate washing solution for 20 minutes, taken out and rinsed with clean water continuously, blown dry, immersed in the washing solution for 30 minutes by ultrasonic treatment, taken out and rinsed with clean water and deionized water, and then ultrasonically cleaned and dried with acetone and isopropanol in turn.

7. The method for preparing a perovskite solar cell assembly according to claim 5, characterized in that: In step S7, a counter electrode layer partition (7) is provided at the center of every two adjacent conductive layer partitions (2).

8. The method for preparing a perovskite solar cell assembly according to claim 5, characterized in that: The conductive layer partition (2) and the counter electrode layer partition (7) are both in the shape of strips.

9. The method for preparing a perovskite solar cell assembly according to claim 5, characterized in that: The steps include: S1. Forming N conductive layer partitions (2) on the conductive layer (12) of the transparent conductive substrate (1) to form a conductive layer (12) capable of accommodating 2N or 2N-1 sub-cells, wherein N is a positive integer greater than 1; and soaking the transparent conductive substrate (1) with the conductive layer partitions (2) in a potassium dichromate washing solution for 20 minutes, taking it out and continuously rinsing it with clean water, blowing it dry, soaking it in the washing solution for ultrasonic treatment for 30 minutes, taking it out and rinsing it with clean water and deionized water, and then ultrasonically cleaning and drying it with acetone and isopropanol in turn; S2. Preparation of the bottom electron transport layer (31) in the NIP type perovskite subcell: Place the transparent conductive substrate (1) covered with the mask on a hot plate and heat it to 450° C. for 20 minutes. Under oxygen protection, spray 7 ml of titanium dioxide precursor solution evenly onto the transparent conductive substrate (1) and keep it warm for 30 minutes to obtain a dense titanium dioxide electron transport layer with a thickness of 30 nm. S3. Preparation of the bottom hole transport layer (41) in the PIN-type perovskite subcell: Place the transparent conductive substrate (1) covered with the mask on a hot plate and heat it to 390° C. for 20 minutes. Under oxygen protection, spray 6 ml of nickel oxide precursor solution evenly onto the transparent conductive substrate (1) and keep it warm for 30 minutes to obtain a dense nickel oxide hole transport layer with a thickness of 20 nm. S4, preparation of perovskite light absorbing layer (5): 200 μl of methylamine perovskite precursor solution is evenly dripped on the transparent conductive substrate (1) prepared with titanium dioxide electron transport layer and nickel oxide hole transport layer, and two-stage spin coating is adopted, 1000 rpm spin coating for 10 seconds and then 5000 rpm spin coating for 30 seconds. After the spin coating, the transparent conductive substrate (1) covered with the perovskite precursor film is immediately placed in a self-made closed chamber, evacuated to 10 Pa, and the transparent conductive substrate (1) is taken out and placed on a hot plate at 100° C. and heated for 30 minutes, so that a brown perovskite film is obtained on the transparent conductive substrate (1); S5. Preparation of the top hole transport layer (32) in the NIP-type perovskite subcell: Place the transparent conductive substrate (1) covered with the mask in step S4 into a magnetron sputtering chamber and evacuate the chamber to 10 -4 Pa, control the flow rate of Ar and O2, set the sputtering pressure to 0.3Pa, set the RF sputtering power to 150W after the pressure stabilizes, open the baffle of the target material, start sputtering, and obtain a nickel oxide hole transport layer with a thickness of 20nm; S6. Preparation of the top electron transport layer (42) in the PIN-type perovskite subcell: Place the transparent conductive substrate (1) covered with the mask into a thermal evaporation chamber and evacuate the chamber to 10 -4 Pa below The deposition rate deposited a C60 electron transport layer with a thickness of 15 nm; S7, preparing a metal counter electrode (6): Covering the transparent conductive substrate (1) prepared with a nickel oxide hole transport layer and a C60 electron transport layer with a mask, placing it in a thermal evaporation chamber, and evacuating the chamber to 10 -4 Pa below A Ag metal counter electrode with a thickness of 100 nm is deposited at a deposition rate; a counter electrode layer partition (7) with a width of 40 μm is etched on the Ag metal counter electrode using a pulse laser with a spot size of 25 μm, and a counter electrode layer partition (7) is arranged at the center of every two adjacent conductive layer partitions (2), thereby obtaining a perovskite solar cell module.

10. The method for preparing a perovskite solar cell assembly according to claim 5, characterized in that: In step S7, the pulse energy is 10 μJ, the pulse frequency is 35 KHz, and the etching speed is 800 mm / s.

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