High-energy metal ion implanter

Abstract

The invention discloses a high-energy metal ion implanter. The high-energy metal ion implanter comprises an ion source system, a movable electrode, an accelerator, a deflection system, a scanning system and a target chamber system which are arranged in sequence, the ion source system focuses laser on the surface of a refractory metal target material for bombardment to generate refractory metal plasma; the movable electrode is used for leading out a refractory metal ion beam; the accelerator is used for accelerating the refractory metal ion beam; the deflection system is used for performing mass-to-charge ratio screening on the accelerated ion beam; and the scanning system is used for controlling the screening ion beam to scan the material surface in the target chamber system. According to the method, the laser is focused on the surface of the refractory metal target material for bombardment to generate the refractory metal plasma, so that the flow intensity of the refractory metal ion beam is improved, and the injection efficiency and the injection effect are improved.

Description

Technical Field

[0001] The present application relates to the technical field of high energy ion implanters, and in particular to a high energy metal ion implanter. Background Art

[0002] High-energy ion implantation technology is a processing technology that directly injects high-energy ion beams into the surface of materials, which can change the surface properties of materials, such as hardness, wear resistance, corrosion resistance, etc., thereby improving the performance of materials. High-energy ion implanters can provide high-energy ion beams and can be used for a variety of applications such as material modification, surface treatment, ion implantation, ion beam etching, etc., and have a wide range of experimental and industrial application value. Therefore, it is necessary to study high-energy ion implanters.

[0003] In the prior art, Chinese patent CN105551922A discloses a SiC high-temperature and high-energy aluminum ion implanter, comprising: an ion source for generating aluminum-containing ions; an ion beam transmission system for transmitting an aluminum ion beam; comprising an extraction system, a mass analyzer, an analysis light barrier, an acceleration tube, a vertical scanning electrode plate and a parallel beam lens arranged in sequence; the extraction system extracts the ions generated by the ion source and forms an ion beam; the ion beam passes through the mass analyzer and the analysis light barrier in sequence, and then is accelerated by the acceleration tube, and the accelerated ion beam passes through a lens to correct the beam spot shape, and the ion beam spot passes through the vertical scanning electrode plate and is swept into a fan-shaped beam band, and the fan-shaped beam band passes through the parallel beam lens to form a parallel belt beam and enters a high-temperature target chamber system; the high-temperature target chamber system is used to carry the wafer to be implanted and heat the wafer to meet the high-temperature process requirements for aluminum implantation.

[0004] In actual industrial applications, existing ion sources generally use sputtering to generate refractory metal ion beams, and the current intensity of the refractory metal ion beams generated by the sputtering method is relatively low; accelerators generally use series electrostatic accelerators to accelerate ion beams. As the acceleration voltage increases, the structure of the electrostatic accelerator becomes more complicated and the insulation distance gradually increases, which will significantly increase the physical size of the equipment. Since the acceleration voltage of the electrostatic accelerator generally does not exceed 500kV, for processes that require high-energy MeV-level injection, the electrostatic accelerator cannot meet the corresponding energy requirements, thereby affecting the injection efficiency and injection effect. However, the above-mentioned prior art does not solve this problem. Summary of the invention

[0005] The present application provides a high-energy metal ion implanter to solve the problems of low current intensity, poor implantation efficiency and poor implantation effect of refractory metal ion beam in the prior art.

[0006] On the one hand, the present application provides a high-energy metal ion implanter, comprising: an ion source system, a movable electrode, an accelerator, a deflection system, a scanning system and a target chamber system arranged in sequence.

[0007] The ion source system generates refractory metal plasma by focusing laser on the surface of refractory metal target material for bombardment.

[0008] The movable electrode is used to extract the refractory metal ion beam from the refractory metal plasma.

[0009] The accelerator is used to accelerate the refractory metal ion beam to obtain an accelerated ion beam.

[0010] The deflection system is used to perform mass-to-charge ratio screening on the accelerated ion beam to obtain a screened ion beam.

[0011] The scanning system is used to control the screened ion beam to scan the surface of the material in the target chamber system to achieve uniform ion beam injection.

[0012] In a possible implementation, a solenoid system is disposed outside the movable electrode, one end of the solenoid system is connected to the outlet of the ion source system, and the other end of the solenoid system is connected to the accelerator.

[0013] The solenoid system is used to confine the lateral diffusion of the refractory metal plasma in the movable electrode through a solenoid magnetic field, and to modulate the flow intensity and pulse width of the refractory metal plasma.

[0014] In a possible implementation, the accelerator is a radio frequency quadrupole linear accelerator.

[0015] In a possible implementation, the deflection system uses a deflection magnet or an electrostatic deflection plate to perform mass-to-charge ratio screening on the accelerated ion beam to obtain a screened ion beam.

[0016] In a possible implementation, the ion source system adopts an inner and outer metal target chamber structure.

[0017] In a possible implementation manner, the length of the movable electrode is adjustable.

[0018] In a possible implementation manner, a first beam diagnostic system is disposed between the accelerator and the deflection system, and a second beam diagnostic system is disposed between the deflection system and the scanning system.

[0019] The first beam diagnostic system is used to measure the current intensity and pulse width of the accelerated ion beam.

[0020] The second beam diagnostic system is used to measure the current intensity and pulse width of the screening ion beam.

[0021] In a possible implementation manner, a beam shaping system is provided between the scanning system and the target chamber system.

[0022] The beam shaping system is used to perform beam shaping on the screening ion beam passing through the scanning system.

[0023] A high-energy metal ion implanter in this application has the following advantages: Refractory metal plasma is generated by focusing laser on the surface of refractory metal target material for bombardment, thereby increasing the flow intensity of refractory metal ion beam, thereby improving the injection efficiency and injection effect.

[0024] The proposed solenoid system constrains the lateral diffusion of the refractory metal plasma in the movable electrode through the solenoid magnetic field, modulates the flow intensity and pulse width of the refractory metal plasma, and improves the diffusion constraint effect and parameter modulation flexibility.

[0025] The proposed accelerator uses a radio frequency quadrupole linear accelerator. Compared with the general tandem electrostatic accelerator, it has a compact structure, reduces space requirements, and improves the ion beam acceleration efficiency, making the ion beam energy reach the MeV level.

[0026] The proposed ion source system adopts an inner and outer metal target chamber structure. The outer target chamber provides a high vacuum environment for the inner target chamber. The inner target chamber is connected to the electrode, and the inner target chamber and the electrode are suspended at a high potential through a high-voltage power supply.

[0027] The length of the proposed movable electrode is adjustable, and the capture efficiency of the refractory metal ion beam entering the accelerator is improved by adjusting the length of the movable electrode.

[0028] The proposed first beam diagnostic system and second beam diagnostic system improve the reliability of ion beam measurement and analysis by measuring the current intensity and pulse width of the accelerated ion beam and the screened ion beam. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0030] Figure 1 A schematic structural diagram of a high-energy metal ion implanter provided in an embodiment of the present application.

[0031] Description of reference numerals: 1- ion source system, 2- solenoid system, 3- movable electrode, 4- accelerator, 5- first beam diagnostic system, 6- deflection system, 7- second beam diagnostic system, 8- scanning system, 9- beam shaping system, 10- target chamber system. DETAILED DESCRIPTION

[0032] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0033] like Figure 1 As shown, an embodiment of the present application provides a high-energy metal ion implanter, comprising: an ion source system 1, a movable electrode 3, an accelerator 4, a deflection system 6, a scanning system 8 and a target chamber system 10 arranged in sequence.

[0034] The ion source system 1 generates refractory metal plasma by focusing laser light onto the surface of a refractory metal target for bombardment.

[0035] The movable electrode 3 is used to extract the refractory metal ion beam in the refractory metal plasma.

[0036] The accelerator 4 is used to accelerate the refractory metal ion beam to obtain an accelerated ion beam.

[0037] The deflection system 6 is used to perform mass-to-charge ratio screening on the accelerated ion beam to obtain a screened ion beam.

[0038] The scanning system 8 is used to control the screening ion beam to scan the surface of the material in the target chamber system 10 to achieve uniform ion beam implantation.

[0039] Specifically, refractory metals refer to a class of metals with extremely high melting points. These metals not only have high melting points, but also have excellent high temperature resistance, corrosion resistance, high strength, high hardness and stable chemical properties. They generally include: tungsten (W), molybdenum (Mo), tantalum (Ta), niobium (Nb), hafnium (Hf), rhenium (Re), chromium (Cr), zirconium (Zr). The corresponding refractory metal can be selected as the target material of the ion source system 1 according to actual performance requirements. In this embodiment, the corresponding refractory metal plasma is generated by focusing the laser on the surface of the refractory metal target for bombardment. The refractory metal ion beam produced has an order of magnitude advantage over the general ion source (such as sputtering method) (near target surface current density j>10 kA / cm 2 , after drifting 1m, the current density j>10 mA / cm 2 ), which increases the current intensity of the refractory metal ion beam, thereby improving the injection efficiency and injection effect.

[0040] Exemplarily, a solenoid system 2 is disposed outside the movable electrode 3 , one end of the solenoid system 2 is connected to the outlet of the ion source system 1 , and the other end of the solenoid system 2 is connected to the accelerator 4 .

[0041] The solenoid system 2 is used to constrain the lateral diffusion of the refractory metal plasma in the movable electrode 3 through the solenoid magnetic field, and to modulate the flow intensity and pulse width of the refractory metal plasma.

[0042] Specifically, the arrangement of the solenoid system 2 improves the diffusion confinement effect and the parameter modulation flexibility.

[0043] Exemplarily, the accelerator 4 is a radio frequency quadrupole linear accelerator.

[0044] Specifically, the accelerator 4 of the existing high-energy ion implanter generally adopts a series electrostatic accelerator. As the acceleration voltage increases, the structure of the electrostatic accelerator becomes more complicated, and the insulation distance gradually increases, which will significantly increase the physical size of the device. Since the acceleration voltage of the electrostatic accelerator generally does not exceed 500kV, for processes requiring high-energy MeV level injection, the electrostatic accelerator cannot meet the corresponding energy requirements. In this embodiment, the accelerator 4 adopts a radio frequency quadrupole linear accelerator, which has a compact structure, reduces space requirements, and improves the ion beam acceleration efficiency, so that the ion beam energy reaches the MeV level.

[0045] Exemplarily, the deflection system 6 uses a deflection magnet or an electrostatic deflection plate to perform mass-to-charge ratio screening on the accelerated ion beam to obtain a screened ion beam.

[0046] In this embodiment, the deflection system 6 uses a deflection magnet to screen a specific mass-to-charge ratio of the accelerated ion beam.

[0047] Exemplarily, the ion source system 1 adopts an inner and outer metal target chamber structure.

[0048] Specifically, in the present embodiment, in the structure of the inner and outer metal target chambers of the ion source system 1, the outer target chamber provides a high vacuum environment for the inner target chamber, the inner target chamber is connected to the electrode, and the inner target chamber and the electrode are suspended at a high potential through a high voltage power supply. The refractory metal ions generated by laser target shooting diffuse in the pipe of the movable electrode 3 in a plasma electrically neutral manner, and the ion beam is extracted at the entrance of the radio frequency quadrupole linear accelerator (i.e., the accelerating electrode port), avoiding the deterioration of the beam quality caused by the space charge effect, and providing support for the acceleration of ions and the improvement of ion beam quality.

[0049] Exemplarily, the length of the movable electrode 3 is adjustable.

[0050] Specifically, the movable electrode 3 is used to lead the refractory metal ion beam in the refractory metal plasma from the outlet of the ion source system 1 to the entrance of the accelerator 4. By adjusting the length of the movable electrode 3, the electric field distribution between the movable electrode 3 and the accelerating pole of the accelerator 4 is changed to form a better focusing field effect, thereby improving the capture efficiency of the refractory metal ion beam entering the accelerator 4. In this embodiment, the length adjustment of the movable electrode 3 is achieved by driving the electrode sleeve of the movable electrode 3 by a servo motor. In other possible embodiments, other length adjustment methods may also be used.

[0051] Exemplarily, a first beam diagnostic system 5 is arranged between the accelerator 4 and the deflection system 6 , and a second beam diagnostic system 7 is arranged between the deflection system 6 and the scanning system 8 .

[0052] The first beam diagnostic system 5 is used to measure the current intensity and pulse width of the accelerated ion beam.

[0053] The second beam diagnostic system 7 is used to measure the current intensity and pulse width of the screening ion beam.

[0054] Specifically, the reliability of ion beam measurement and analysis is improved by measuring the current intensity and pulse width of the accelerated ion beam and the screened ion beam.

[0055] Exemplarily, a beam shaping system 9 is provided between the scanning system 8 and the target chamber system 10 .

[0056] The beam shaping system 9 is used to perform beam shaping on the screened ion beam passing through the scanning system 8 .

[0057] Specifically, according to actual injection requirements, the beam shaping system 9 can also use an electric field or a magnetic field to expand the screened ion beam passing through the scanning system 8, and then perform beam shaping, and finally inject the obtained high-energy metal ion beam into the target chamber system 10.

[0058] The embodiment of the present application generates refractory metal plasma by focusing laser onto the surface of a refractory metal target for bombardment, thereby increasing the flow intensity of the refractory metal ion beam and further improving the injection efficiency and injection effect.

[0059] The proposed solenoid system 2 constrains the lateral diffusion of the refractory metal plasma in the movable electrode 3 through the solenoid magnetic field, modulates the flow intensity and pulse width of the refractory metal plasma, and improves the diffusion constraint effect and parameter modulation flexibility.

[0060] The proposed accelerator 4 uses a radio frequency quadrupole linear accelerator. Compared with a general series electrostatic accelerator, it has a compact structure, reduces space requirements, and improves the ion beam acceleration efficiency, so that the ion beam energy reaches the MeV level.

[0061] The proposed ion source system 1 adopts an inner and outer metal target chamber structure, wherein the outer target chamber provides a high vacuum environment for the inner target chamber, the inner target chamber is connected to an electrode, and a high voltage power supply is used to suspend the inner target chamber and the electrode at a high potential.

[0062] The length of the movable electrode 3 is adjustable. By adjusting the length of the movable electrode 3 , the capture efficiency of the refractory metal ion beam entering the accelerator 4 is improved.

[0063] The proposed first beam diagnostic system 5 and second beam diagnostic system 7 improve the reliability of ion beam measurement and analysis by measuring the current intensity and pulse width of the accelerated ion beam and the screened ion beam.

[0064] Although the preferred embodiments of the present application have been described, those skilled in the art may make other changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications falling within the scope of the present application.

[0065] Obviously, those skilled in the art can make various changes and modifications to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is also intended to include these modifications and variations.

Claims

1. A high energy metal ion implanter, characterized in that: include: An ion source system, a movable electrode, an accelerator, a deflection system, a scanning system and a target chamber system are arranged in sequence; The ion source system generates refractory metal plasma by focusing laser light onto the surface of a refractory metal target for bombardment; The movable electrode is used to extract the refractory metal ion beam from the refractory metal plasma; The accelerator is used to accelerate the refractory metal ion beam to obtain an accelerated ion beam; The deflection system is used to perform mass-to-charge ratio screening on the accelerated ion beam to obtain a screened ion beam; The scanning system is used to control the screened ion beam to scan the surface of the material in the target chamber system to achieve uniform ion beam injection.

2. A high energy metal ion implanter according to claim 1, characterized in that: A solenoid system is disposed outside the movable electrode, one end of the solenoid system is connected to the outlet of the ion source system, and the other end is connected to the accelerator; The solenoid system is used to confine the lateral diffusion of the refractory metal plasma in the movable electrode through a solenoid magnetic field, and to modulate the flow intensity and pulse width of the refractory metal plasma.

3. A high energy metal ion implanter according to claim 1, characterized in that: The accelerator adopts a radio frequency quadrupole linear accelerator.

4. A high energy metal ion implanter according to claim 1, characterized in that: The deflection system uses a deflection magnet or an electrostatic deflection plate to perform mass-to-charge ratio screening on the accelerated ion beam to obtain a screened ion beam.

5. A high energy metal ion implanter according to claim 1, characterized in that: The ion source system adopts an inner and outer metal target chamber structure.

6. A high energy metal ion implanter according to claim 1, characterized in that: The length of the movable electrode is adjustable.

7. A high energy metal ion implanter according to claim 1, characterized in that: A first beam diagnosis system is arranged between the accelerator and the deflection system, and a second beam diagnosis system is arranged between the deflection system and the scanning system; The first beam diagnostic system is used to measure the current intensity and pulse width of the accelerated ion beam; The second beam diagnostic system is used to measure the current intensity and pulse width of the screening ion beam.

8. A high energy metal ion implanter according to claim 1, characterized in that: A beam shaping system is provided between the scanning system and the target chamber system; The beam shaping system is used to perform beam shaping on the screening ion beam passing through the scanning system.

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