Photomask IC chip quartz substrate surface defect improvement process

Abstract

The invention discloses a process for improving surface defects of a quartz substrate of a photomask IC (integrated circuit) chip, relates to the technical field of quartz substrates, and aims to solve the problem that the surface defects of the quartz substrate cannot be effectively improved in the process from material selection to manufacturing to later quality control in the prior art. Through three methods of visual inspection, automatic optical detection and laser scanning detection, multi-dimensional detection from macroscopic to microscopic and from the surface to the structure is realized, the accuracy and comprehensiveness of defect identification are ensured, and by setting a clear defect classification standard and a maximum defect range, the defect identification accuracy is improved. Defects possibly affecting product performance can be found and treated in time, the surface laser repairing method is suitable for shallow layer defects, the internal ion implantation repairing method can effectively treat deep layer defects, the flexibility and adaptability of the technology are improved through diversified repairing strategies, and unnecessary material waste and machining cost are avoided through accurate repairing.

Description

Technical Field

[0001] The invention relates to the technical field of quartz substrates, in particular to a process for improving surface defects of a photomask IC chip quartz substrate. Background Art

[0002] When the photomask IC chip quartz substrate is being manufactured, certain quality requirements are required for the surface of the quartz substrate. For example, the Chinese patent with the announcement number CN112630233B discloses a substrate surface defect inspection method, which mainly determines the presence or absence of defects, the location of the defect area containing the defects and its size based on the image captured by the linear array camera 51 by the first inspection workbench 50, and stores them in the computer (PC) 80. In addition, the image captured by the linear array camera 51 is displayed on the display unit 81 of the computer 80. From the perspective of work efficiency, the defect detection process of the entire surface of the aluminum substrate 20 in the first inspection workbench 50 is preferably performed in less than 5 seconds. In the first inspection workbench 50, a linear array camera 51 capable of shooting with a resolution of one pixel of less than 20μm / pixel is used, thereby being able to detect defects of a size of 30μm or more. In addition, the image of the line array camera 51 can identify the above defects and the grinding marks caused by the PVA grindstone on the surface of the aluminum substrate 20, and can accurately extract the defective area. Although the above patent solves the problem of surface defect inspection, the following problems still exist in actual operation:

[0003] 1. The photomask IC chip quartz substrate is not effectively controlled and judged from the initial material selection to the process manufacturing process, resulting in surface defects during the quartz substrate manufacturing process.

[0004] 2. The manufactured photomask IC chip quartz substrates were not subjected to more rigorous defect inspection, and no targeted repair decisions were made based on the defects, which led to an increase in the scrap rate of the quartz substrates.

[0005] 3. Targeted defect repair was not performed based on the specific conditions of the surface defects of each photomask IC chip quartz substrate, resulting in the inability to further improve the surface defects. Summary of the invention

[0006] The purpose of the present invention is to provide a process for improving the surface defects of a quartz substrate of a photomask IC chip. Through three methods, namely, visual inspection, automatic optical inspection and laser scanning inspection, multi-dimensional inspection from macro to micro and from surface to structure is realized, thereby ensuring the accuracy and comprehensiveness of defect identification. By setting clear defect classification standards and maximum defect ranges, defects that may affect product performance can be discovered and handled in a timely manner. The surface laser repair method is suitable for shallow defects, while the internal ion implantation repair method can effectively handle deep defects. The diversified repair strategies increase the flexibility and adaptability of the process. Unnecessary material waste and processing costs are avoided through precise repair, thereby solving the problems in the prior art.

[0007] To achieve the above object, the present invention provides the following technical solutions:

[0008] A process for improving surface defects of a photomask IC chip quartz substrate comprises the following steps:

[0009] S1: Material selection and processing: Before manufacturing the photomask quartz substrate, the material of the quartz substrate is selected first, and after the selection is completed, the quartz substrate is processed, and basic material data is obtained after the quartz substrate is processed;

[0010] S2: Manufacturing optimization: Carry out process manufacturing based on basic material data and monitor the process manufacturing process in real time;

[0011] S3: Finished product inspection: Inspect the manufactured quartz substrate, confirm the defect data of the quartz substrate according to the inspection results, and sort the defect data into defect parameters. After the defect parameters are sorted, the material repair data is obtained;

[0012] S4: Finished product repair: Confirm the repair type according to the material repair data, and repair the defects of the quartz substrate according to different repair types. After the defect repair is completed, a standard photomask IC chip quartz substrate is obtained.

[0013] Preferably, the material of the quartz substrate is selected in S1, and after the selection is completed, the quartz substrate is processed, including:

[0014] Obtain the manufacturing requirements of the photomask IC chip quartz substrate from the database, and confirm the key factors of the quartz substrate material according to the production requirements;

[0015] Among them, the key factors include the purity, uniformity, transparency, thermal expansion coefficient, mechanical strength, surface flatness and smoothness, chemical stability and optical uniformity of the quartz substrate;

[0016] After confirming the quartz substrate material based on key factors, the quartz substrate material is sampled and tested;

[0017] If the test is qualified, batch purchase will be carried out. If the test fails, the quartz substrate material will be reselected.

[0018] Preferably, the method of selecting a material for the quartz substrate in S1 and processing the quartz substrate after the selection is completed further includes:

[0019] Cut the qualified quartz substrate according to manufacturing requirements;

[0020] Polishing the cut quartz substrate using a precision polishing machine;

[0021] After polishing, use ultrapure water, ultrasonic cleaner and special cleaning agent to clean the quartz substrate;

[0022] After cleaning, use high-purity nitrogen to blow dry the quartz substrate;

[0023] The substrate material data is obtained after the quartz substrate is blow-dried.

[0024] Preferably, the process manufacturing is performed according to the basic material data in S2, and the process manufacturing process is monitored in real time, including:

[0025] The process manufacturing process of quartz substrate is:

[0026] S201: coating and baking: before coating the quartz substrate, wipe the substrate with a dust-free cloth, pure water and isopropyl alcohol cleaner. After wiping, confirm the coating method according to the process requirements in the manufacturing requirements; the process requirements include pattern size, coating thickness and uniformity, and the coating methods include roll coating, drop coating, spray coating and spin coating;

[0027] During the coating process, adjust the pressure of the glue roller, the depth of the dropper or the spraying parameters of the spray gun according to the process requirements;

[0028] After the quartz substrate is coated, it is preheated and baked, wherein the baking temperature is between 90°C and 120°C; the baking time is between 5 minutes and 30 minutes, and hot air circulation is performed during the baking process;

[0029] S202: Exposure and development: After the quartz substrate is baked, it is subjected to exposure processing, wherein the exposure machine is a stepping exposure machine or a scanning exposure machine, and key parameters of the exposure machine are set, including exposure energy, exposure time, focal length and alignment accuracy;

[0030] Load the baked quartz substrate onto the wafer stage of the exposure machine and align it. After alignment, start the exposure machine to perform exposure scanning;

[0031] The exposed quartz substrate is immersed in a developing solution and stirred during the developing process;

[0032] After the development is completed, the quartz substrate is rinsed with ionized water, and after the rinsing is completed, it is dried using a hot air drying method;

[0033] S203: etching: selecting an etching method for the dried quartz substrate according to process requirements, wherein the etching method includes wet etching and dry etching;

[0034] After the etching method is confirmed, the quartz substrate is immersed in an etching solution, which is a hydrofluoric acid aqueous solution;

[0035] Before the quartz substrate is invaded, the temperature, concentration and etching time of the etching solution are confirmed;

[0036] The temperature of the etching solution is between 25°C and 40°C; the concentration is 5% and the etching time is between 30 seconds and 5 minutes;

[0037] After the quartz substrate is etched, an organic solution is used to dissolve the photosensitive adhesive, wherein the organic solution is isopropyl alcohol;

[0038] After dissolving the photosensitive adhesive, the quartz substrate is sprayed with a solvent to remove the photosensitive adhesive;

[0039] S204: cleaning: the quartz substrate is cleaned by a plasma cleaning machine after the photosensitive adhesive is removed, and the parameters of the plasma cleaning machine are set before cleaning;

[0040] Among them, the parameters of the plasma cleaning machine include power, pressure and gas flow rate; the power is between 100W-500W; the pressure is between 50mTorr-200mTorr; the gas flow rate is between 50sccm-200sccm;

[0041] After cleaning, the quartz substrate is purged with nitrogen;

[0042] After the purging is completed, the quartz substrate is rinsed with deionized water, wherein the temperature of the deionized water is between 30°C and 50°C, and the rinsing time is between 30 seconds and 5 minutes;

[0043] The rinsed quartz substrate is subjected to hot air drying treatment, and after the hot air drying treatment, a manufactured photomask IC chip quartz substrate is obtained.

[0044] Preferably, the process manufacturing according to the basic material data in S2 and the real-time monitoring of the process manufacturing flow also includes:

[0045] Collect data for each step of the quartz substrate manufacturing process;

[0046] Wherein, the online particle data, coating thickness data, temperature data and hot air circulation data in step S201 are collected;

[0047] Collecting the exposure parameter data, alignment accuracy data, development process data and washing quality data in step S202;

[0048] Collecting the etching solution parameter data, etching time data and etching depth data in step S203;

[0049] Collecting the plasma cleaning parameter data, cleaning effect data, drying process data, and purging and flushing data in step S204;

[0050] The collected data is transmitted to the controller for data analysis, and the process parameters are adjusted when the collected data is not within the preset standard data range.

[0051] Preferably, the quartz substrate manufactured in S3 is tested, defect data of the quartz substrate is confirmed according to the test result, and defect parameters are sorted out for the defect data, including:

[0052] Inspecting the manufactured quartz substrate, wherein the inspection method includes visual inspection, automatic optical inspection and laser scanning inspection;

[0053] Visual inspection is to use a low-power optical microscope for preliminary inspection to identify obvious defects on the quartz substrate, and then use a high-power optical microscope to conduct a secondary inspection on the quartz substrate to identify minor defects on the quartz substrate. Among them, obvious defects include scratches, cracks, foreign matter, vacuum and uneven refractive index area; minor defects include minor scratches, microcracks, pattern deviation, surface contamination and local structural abnormalities;

[0054] Automatic optical inspection is to quickly scan the quartz substrate, identify obvious defects, and then scan the obvious defects in detail;

[0055] Laser scanning detection uses a laser scanner to measure the height of the pattern on the quartz substrate and the verticality of the pattern sidewall, and analyzes the roughness of the quartz substrate surface;

[0056] After all quartz substrates are inspected, the inspection data are integrated to obtain material defect data.

[0057] Preferably, the quartz substrate manufactured in S3 is tested, defect data of the quartz substrate is confirmed according to the test result, and defect parameters are sorted for the defect data, which further includes:

[0058] Defect classification is performed based on material defect data. Defect classification is based on the shape, size, location and depth of the defect;

[0059] Shapes include particles, cracks, stains and edge missing; sizes include micro defects, small defects, medium defects and large defects, among which micro defects are less than 10 microns, small defects are between 10-50 microns, medium defects are between 50-200 microns, and large defects are greater than 200 microns; positions include midline areas, edge areas and functional areas; depths include surface defects, shallow defects and deep defects.

[0060] Preferably, the quartz substrate manufactured in S3 is tested, defect data of the quartz substrate is confirmed according to the test result, and defect parameters are sorted for the defect data, which further includes:

[0061] The quartz substrates are repaired or discarded according to the defect classification;

[0062] When the degree of defect exceeds the maximum defect range, the manufactured quartz substrate is discarded;

[0063] When the degree of defect does not exceed the maximum defect range, the manufactured quartz substrate is repaired;

[0064] The repaired quartz substrate is marked as material repair data.

[0065] Preferably, the repair type is confirmed according to the material repair data in S4, and the defects of the quartz substrate are repaired according to different repair types, including:

[0066] The repair method is confirmed based on the defect depth in the material repair data. When the defect depth is between 10 nanometers and 100 nanometers, the surface laser repair method is used for repair; when the defect depth exceeds 100 nanometers, the internal ion implantation repair method is used for repair;

[0067] The process of surface laser repair method is to select laser parameters according to the material repair data. The laser parameters include laser wavelength, power, pulse width, repetition frequency and scanning speed.

[0068] Before laser repair of the repaired quartz substrate, the laser repair equipment is calibrated and the defect position is aligned. After alignment, the laser is started, and the defect area is irradiated according to the selected laser parameters, and the irradiation time and energy are controlled, wherein the irradiation time is between 10ns-500ns, and the energy is between 1mJ-10mJ;

[0069] After the irradiation is completed, a defective quartz substrate having been repaired is obtained.

[0070] Preferably, the step of confirming the repair type according to the material repair data in S4 and repairing the defects of the quartz substrate according to different repair types further includes:

[0071] The internal ion implantation repair method process is to select the ion type according to the material repair data, wherein the ion types include boron, phosphorus, arsenic and silicon;

[0072] The selected ions are accelerated in a vacuum, wherein the energy of boron is between 10keV and 100keV; the energy of phosphorus is between 100keV and 500keV; the energy of arsenic is between 200keV and 1MeV; the energy of silicon is between 500keV and 5MeV;

[0073] Implanting the accelerated ions into the defect depth and region of the defective quartz substrate;

[0074] The quartz substrate after ion implantation is heat treated, and the quartz substrate is cleaned after the heat treatment;

[0075] After the cleaning is completed, a defective quartz substrate is repaired;

[0076] Finally, the quartz substrate repaired by the internal ion implantation repair method and the quartz substrate repaired by the surface laser repair method are used as photomask IC chip quartz substrates with improved surface defects.

[0077] Compared with the prior art, the present invention has the following beneficial effects:

[0078] 1. The present invention provides a process for improving the surface defects of a quartz substrate of a photomask IC chip. By collecting substrate material data, a detailed material archive and process parameter library can be established, providing strong support for subsequent production process optimization and quality control. The manufacturing process flow includes cleaning, coating, exposure and development, etching, cleaning and drying. Each step is carefully designed and strictly controlled to ensure the stability and repeatability of the process, thereby effectively reducing the incidence of surface defects.

[0079] 2. The present invention provides a process for improving the surface defects of a photomask IC chip quartz substrate. Through three methods, namely, visual inspection, automatic optical inspection and laser scanning inspection, multi-dimensional inspection from macro to micro and from surface to structure is realized, thereby ensuring the accuracy and comprehensiveness of defect identification. By setting clear defect classification standards and maximum defect range, defects that may affect product performance can be discovered and handled in a timely manner, thereby reducing the scrap rate and improving the product qualification rate.

[0080] 3. The present invention provides a process for improving the surface defects of a photomask IC chip quartz substrate. The surface laser repair method is suitable for shallow defects, while the internal ion implantation repair method can effectively deal with deep defects. This diversified repair strategy increases the flexibility and adaptability of the process. The laser repair method, with its high efficiency and rapidity, can significantly shorten the repair cycle and avoid unnecessary material waste and processing costs through precise repair. BRIEF DESCRIPTION OF THE DRAWINGS

[0081] Figure 1 It is a schematic diagram of the steps of improving the surface defects of the quartz substrate of the photomask IC chip of the present invention;

[0082] Figure 2 It is a schematic diagram of the process of improving the surface defects of the quartz substrate of the photomask IC chip of the present invention. DETAILED DESCRIPTION

[0083] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0084] In order to solve the problem that the photomask IC chip quartz substrate has no effective control and judgment from the initial material selection to the process manufacturing process in the prior art, which leads to surface defects in the quartz substrate manufacturing process, please refer to Figure 1 and Figure 2 , this embodiment provides the following technical solutions:

[0085] A process for improving surface defects of a photomask IC chip quartz substrate comprises the following steps:

[0086] S1: Material selection and processing: Before manufacturing the photomask quartz substrate, the material of the quartz substrate is selected first, and after the selection is completed, the quartz substrate is processed, and basic material data is obtained after the quartz substrate is processed;

[0087] Among them, by collecting substrate material data, a detailed material archive and process parameter library can be established to provide strong support for subsequent production process optimization and quality control;

[0088] S2: Manufacturing optimization: Carry out process manufacturing based on basic material data and monitor the process manufacturing process in real time;

[0089] Among them, each step of the entire process is carefully designed and strictly controlled to ensure the stability and repeatability of the process;

[0090] S3: Finished product inspection: Inspect the manufactured quartz substrate, confirm the defect data of the quartz substrate according to the inspection results, and sort the defect data into defect parameters. After the defect parameters are sorted, the material repair data is obtained;

[0091] Among them, through effective defect classification and processing, the number of defects and quality problems on the surface of quartz substrates can be significantly reduced;

[0092] S4: Finished product repair: Confirm the repair type according to the material repair data, repair the defects of the quartz substrate according to different repair types, and obtain a standard photomask IC chip quartz substrate after the defect repair is completed;

[0093] Among them, unnecessary material waste and processing costs are avoided through precise repair.

[0094] The material of the quartz substrate is selected in S1, and after the selection is completed, the quartz substrate is processed, including:

[0095] Obtain the manufacturing requirements of the photomask IC chip quartz substrate from the database, and confirm the key factors of the quartz substrate material according to the production requirements;

[0096] Among them, the key factors include the purity, uniformity, transparency, thermal expansion coefficient, mechanical strength, surface flatness and smoothness, chemical stability and optical uniformity of the quartz substrate;

[0097] After confirming the quartz substrate material based on key factors, the quartz substrate material is sampled and tested;

[0098] If the test is qualified, batch purchase will be carried out. If the test fails, the quartz substrate material will be reselected.

[0099] Cut the qualified quartz substrate according to manufacturing requirements;

[0100] Polishing the cut quartz substrate using a precision polishing machine;

[0101] After polishing, use ultrapure water, ultrasonic cleaner and special cleaning agent to clean the quartz substrate;

[0102] After cleaning, use high-purity nitrogen to blow dry the quartz substrate;

[0103] The substrate material data is obtained after the quartz substrate is blow-dried.

[0104] Specifically, by comprehensively considering multiple key factors such as the purity, uniformity, and transparency of the quartz substrate, the basic quality of the selected material is ensured. These factors directly affect the performance of the substrate in the subsequent manufacturing process, such as light transmittance, thermal stability, etc., thereby reducing surface defects caused by material problems. Sample testing before bulk procurement can timely discover and solve potential material problems, avoid large-scale substrate defects caused by material quality problems, and improve production efficiency and yield rate. The use of precision equipment for cutting and polishing ensures the dimensional accuracy and surface finish of the quartz substrate. Precise cutting reduces physical defects such as edge cracking, while high-quality polishing further improves the surface smoothness of the substrate and reduces light scattering and defects caused by surface roughness. Using high-purity nitrogen to blow dry the substrate can avoid water stains and re-contamination, while reducing the uneven surface tension problem that may be caused by natural drying, thereby maintaining the flatness and finish of the substrate surface. By collecting substrate material data, a detailed material archive and process parameter library can be established to provide strong support for subsequent production process optimization and quality control. This helps to continuously improve the manufacturing quality and consistency of the substrate and reduce the occurrence of surface defects.

[0105] In S2, process manufacturing is performed based on basic material data, and the process manufacturing process is monitored in real time, including:

[0106] The process manufacturing process of quartz substrate is:

[0107] S201: coating and baking: before coating the quartz substrate, wipe the substrate with a dust-free cloth, pure water and isopropyl alcohol cleaner. After wiping, confirm the coating method according to the process requirements in the manufacturing requirements; the process requirements include pattern size, coating thickness and uniformity, and the coating methods include roll coating, drop coating, spray coating and spin coating;

[0108] During the coating process, adjust the pressure of the glue roller, the depth of the dropper or the spraying parameters of the spray gun according to the process requirements;

[0109] After the quartz substrate is coated, it is preheated and baked, wherein the baking temperature is between 90°C and 120°C; the baking time is between 5 minutes and 30 minutes, and hot air circulation is performed during the baking process;

[0110] S202: Exposure and development: After the quartz substrate is baked, it is subjected to exposure processing, wherein the exposure machine is a stepping exposure machine or a scanning exposure machine, and key parameters of the exposure machine are set, including exposure energy, exposure time, focal length and alignment accuracy;

[0111] Load the baked quartz substrate onto the wafer stage of the exposure machine and align it. After alignment, start the exposure machine to perform exposure scanning;

[0112] The exposed quartz substrate is immersed in a developing solution and stirred during the developing process;

[0113] After the development is completed, the quartz substrate is rinsed with ionized water, and after the rinsing is completed, it is dried using a hot air drying method;

[0114] S203: etching: selecting an etching method for the dried quartz substrate according to process requirements, wherein the etching method includes wet etching and dry etching;

[0115] After the etching method is confirmed, the quartz substrate is immersed in an etching solution, which is a hydrofluoric acid aqueous solution;

[0116] Before the quartz substrate is invaded, the temperature, concentration and etching time of the etching solution are confirmed;

[0117] The temperature of the etching solution is between 25°C and 40°C; the concentration is 5% and the etching time is between 30 seconds and 5 minutes;

[0118] After the quartz substrate is etched, an organic solution is used to dissolve the photosensitive adhesive, wherein the organic solution is isopropyl alcohol;

[0119] After dissolving the photosensitive adhesive, the quartz substrate is sprayed with a solvent to remove the photosensitive adhesive;

[0120] S204: cleaning: the quartz substrate is cleaned by a plasma cleaning machine after the photosensitive adhesive is removed, and the parameters of the plasma cleaning machine are set before cleaning;

[0121] Among them, the parameters of the plasma cleaning machine include power, pressure and gas flow rate; the power is between 100W-500W; the pressure is between 50mTorr-200mTorr; the gas flow rate is between 50sccm-200sccm;

[0122] After cleaning, the quartz substrate is purged with nitrogen;

[0123] After the purging is completed, the quartz substrate is rinsed with deionized water, wherein the temperature of the deionized water is between 30°C and 50°C, and the rinsing time is between 30 seconds and 5 minutes;

[0124] The rinsed quartz substrate is subjected to hot air drying treatment, and after the hot air drying treatment, a manufactured photomask IC chip quartz substrate is obtained.

[0125] Specifically, use dust-free cloth, pure water and isopropyl alcohol cleaner to strictly wipe the substrate to effectively remove impurities and oil on the surface of the substrate, ensure the cleanliness of the substrate before coating, and reduce surface defects caused by impurities. Adjust the coating method (roll coating, drip coating, spray coating, spin coating) and corresponding parameters (such as glue roller pressure, dropper speed, spraying parameters) according to process requirements to ensure the uniformity of the coating and avoid surface unevenness and defects caused by uneven coating. Use a high-precision exposure machine (step or scanning exposure machine) and achieve high-precision exposure processing by setting key parameters such as exposure energy, time, focal length and alignment accuracy. The stirring and rinsing steps in the development process further ensure the development effect and reduce defects caused by uneven development. Select a suitable etching method (wet or dry) as needed, and strictly control the temperature of the etching solution. The degree, concentration and etching time ensure the accuracy and consistency of etching and reduce surface defects caused by improper etching. Organic solvents (such as isopropyl alcohol) are used to dissolve the photosensitive adhesive and the photosensitive adhesive is completely removed by solvent spray, which further improves the cleanliness and flatness of the substrate surface. A plasma cleaner is used for cleaning. By adjusting parameters such as power, pressure and gas flow, efficient and thorough cleaning effects are achieved to remove residues and tiny particles on the surface of the substrate. Deionized water rinsing and hot air drying are used to further improve the cleanliness and dryness of the substrate and avoid surface problems caused by residual moisture. The entire process, from cleaning, coating, exposure and development, etching to cleaning and drying, is carefully designed and strictly controlled at each step to ensure the stability and repeatability of the process, thereby effectively reducing the incidence of surface defects.

[0126] Collect data for each step of the quartz substrate manufacturing process;

[0127] Wherein, the online particle data, coating thickness data, temperature data and hot air circulation data in step S201 are collected;

[0128] Collecting the exposure parameter data, alignment accuracy data, development process data and washing quality data in step S202;

[0129] Collecting the etching solution parameter data, etching time data and etching depth data in step S203;

[0130] Collecting the plasma cleaning parameter data, cleaning effect data, drying process data, and purging and flushing data in step S204;

[0131] The collected data is transmitted to the controller for data analysis, and the process parameters are adjusted when the collected data is not within the preset standard data range.

[0132] Specifically, by collecting real-time data of key parameters in each step from S201 to S204 (such as online particles, coating thickness, temperature, exposure parameters, alignment accuracy, development process, etching solution parameters, etching time, etching depth, plasma cleaning parameters, etc.), the production status can be fed back immediately to ensure that each process link is within the predetermined standard. When the collected data is not within the preset standard data range, the system can automatically or prompt to adjust the process parameters, thereby effectively reducing the deviation in the production process and improving the consistency and yield of the product. Through the fine control of the process parameters, the defects of the quartz substrate generated in the manufacturing process, such as particle contamination, uneven coating, exposure deviation, and different etching depths, can be significantly reduced, thereby improving the overall quality of the product. In particular, in the surface defect improvement process of the quartz substrate of the photomask IC chip, data collection and analysis are helpful to optimize key steps such as annealing and polishing, further improve the surface flatness and optical properties of the substrate, and reduce the generation of waste caused by deviations in the production process by accurately controlling the process parameters, thereby reducing production costs.

[0133] In order to solve the problem that the existing technology does not conduct more careful defect detection on the manufactured photomask IC chip quartz substrate, and does not make targeted repair judgments based on the defects, which leads to an increase in the waste rate of the quartz substrate, please refer to Figure 1 and Figure 2 , this embodiment provides the following technical solutions:

[0134] The quartz substrate manufactured in S3 is tested, the defect data of the quartz substrate is confirmed according to the test results, and the defect data is sorted into defect parameters, including:

[0135] Inspecting the manufactured quartz substrate, wherein the inspection method includes visual inspection, automatic optical inspection and laser scanning inspection;

[0136] Visual inspection is to use a low-power optical microscope for preliminary inspection to identify obvious defects on the quartz substrate, and then use a high-power optical microscope to conduct a secondary inspection on the quartz substrate to identify minor defects on the quartz substrate. Among them, obvious defects include scratches, cracks, foreign matter, vacuum and uneven refractive index area; minor defects include minor scratches, microcracks, pattern deviation, surface contamination and local structural abnormalities;

[0137] Automatic optical inspection is to quickly scan the quartz substrate, identify obvious defects, and then scan the obvious defects in detail;

[0138] Laser scanning detection uses a laser scanner to measure the height of the pattern on the quartz substrate and the verticality of the pattern sidewall, and analyzes the roughness of the quartz substrate surface;

[0139] After all quartz substrates are inspected, the inspection data are integrated to obtain material defect data.

[0140] Specifically, it combines three methods, namely visual inspection, automatic optical inspection and laser scanning inspection, to achieve multi-dimensional inspection from macro to micro, from surface to structure. This comprehensive inspection strategy ensures the accuracy and comprehensiveness of defect identification. Whether it is obvious scratches, fragmentation, or tiny scratches, microcracks, etc., they can be effectively identified. Both automatic optical inspection and laser scanning inspection use fast scanning technology, which greatly improves the inspection efficiency. In particular, automatic optical inspection identifies obvious defects through preliminary fast scanning, and then scans these areas in detail, avoiding unnecessary repeated inspections, thereby improving the inspection speed while ensuring quality. Laser scanning inspection provides high-precision measurements, including pattern height, sidewall verticality, and surface roughness analysis. These precise data help to deeply understand the nature and extent of defects, and provide strong support for subsequent defect analysis and improvement measures. By regularly analyzing defect data, possible problems and bottlenecks in the manufacturing process can be identified, so that targeted measures can be taken to improve them. This data-based decision-making method helps to continuously improve the manufacturing quality of quartz substrates, reduce the defective rate, and significantly improve the quality stability of quartz substrates, thereby improving the overall performance of IC chips and enhancing the market competitiveness of products.

[0141] Defect classification is performed based on material defect data. Defect classification is based on the shape, size, location and depth of the defect;

[0142] Shape includes particles, cracks, stains and edge missing; size includes micro defects, small defects, medium defects and large defects, among which micro defects are less than 10 microns, small defects are between 10-50 microns, medium defects are between 50-200 microns, and large defects are greater than 200 microns; location includes centerline area, edge area and functional area; depth includes surface defects, shallow defects and deep defects;

[0143] The quartz substrates are repaired or discarded according to the defect classification;

[0144] When the degree of defect exceeds the maximum defect range, the manufactured quartz substrate is discarded;

[0145] When the degree of defect does not exceed the maximum defect range, the manufactured quartz substrate is repaired;

[0146] The repaired quartz substrate is marked as material repair data.

[0147] Specifically, by classifying the shape, size, location and depth of defects in detail, more accurate treatment measures can be taken for different types of defects. This refined classification helps to improve the efficiency and accuracy of defect handling and avoid unnecessary waste of resources. By setting clear defect classification standards (such as size, depth, etc.) and the maximum defect range, defects that may affect product performance can be discovered and handled in a timely manner, thereby reducing the scrap rate and improving the product qualification rate. For defects that do not exceed the maximum defect range, repair measures are taken instead of direct disposal, which not only saves material costs but also reflects the efficient use of resources. At the same time, according to different defect types, differentiated repair strategies can be formulated to ensure the repair effect. Through effective defect classification and treatment, the number of defects and quality problems on the surface of quartz substrates can be significantly reduced, thereby improving the overall product quality and reliability. This is particularly important for the manufacture of high-precision products such as photomask IC chips. Through the analysis and summary of defect data, potential problems and bottlenecks in the production process can be identified, thereby promoting process improvement and technological innovation. This is of great significance to improving the production efficiency and competitiveness of enterprises. By giving priority to repairing rather than directly discarding defective products, the generation of waste is reduced.

[0148] In order to solve the problem that the existing technology does not carry out targeted defect repair according to the specific situation of each photomask IC chip quartz substrate surface defect, resulting in the surface defects cannot be further improved, please refer to Figure 1 and Figure 2 , this embodiment provides the following technical solutions:

[0149] In S4, the repair type is confirmed according to the material repair data, and the defects of the quartz substrate are repaired according to different repair types, including:

[0150] The repair method is confirmed based on the defect depth in the material repair data. When the defect depth is between 10 nanometers and 100 nanometers, the surface laser repair method is used for repair; when the defect depth exceeds 100 nanometers, the internal ion implantation repair method is used for repair;

[0151] The process of surface laser repair method is to select laser parameters according to the material repair data. The laser parameters include laser wavelength, power, pulse width, repetition frequency and scanning speed.

[0152] Before laser repair of the repaired quartz substrate, the laser repair equipment is calibrated and the defect position is aligned. After alignment, the laser is started, and the defect area is irradiated according to the selected laser parameters, and the irradiation time and energy are controlled, wherein the irradiation time is between 10ns-500ns, and the energy is between 1mJ-10mJ;

[0153] After the irradiation is completed, a defective quartz substrate is repaired;

[0154] The internal ion implantation repair method process is to select the ion type according to the material repair data, wherein the ion types include boron, phosphorus, arsenic and silicon;

[0155] The selected ions are accelerated in a vacuum, wherein the energy of boron is between 10keV and 100keV; the energy of phosphorus is between 100keV and 500keV; the energy of arsenic is between 200keV and 1MeV; the energy of silicon is between 500keV and 5MeV;

[0156] Implanting the accelerated ions into the defect depth and region of the defective quartz substrate;

[0157] The quartz substrate after ion implantation is heat treated, and the quartz substrate is cleaned after the heat treatment;

[0158] After the cleaning is completed, a defective quartz substrate is repaired;

[0159] Finally, the quartz substrate repaired by the internal ion implantation repair method and the quartz substrate repaired by the surface laser repair method are used as photomask IC chip quartz substrates with improved surface defects.

[0160] Specifically, by accurately measuring the depth of the defect, the most appropriate repair method (surface laser repair or internal ion implantation repair) is selected. This method ensures that the most appropriate treatment method is taken according to the severity of the defect, thereby improving the accuracy and efficiency of the repair, and provides two different repair methods for defects of different depths. The surface laser repair method is suitable for shallow defects, while the internal ion implantation repair method can effectively deal with deep defects. This diversified repair strategy increases the flexibility and adaptability of the process. The laser repair method can significantly shorten the repair cycle with its high efficiency and rapidity. At the same time, the ion implantation repair method accelerates energy in a vacuum, which also ensures efficient use of energy and reduces energy waste. Whether it is surface laser repair or internal ion implantation repair, it can effectively remove or reduce defects on the quartz substrate, thereby improving the overall quality of the photomask IC chip. This is of great significance for improving product performance, stability and reliability. After ion implantation repair, through heat treatment and cleaning steps, possible residual impurities and stress are further removed, and the physical and chemical stability of the quartz substrate is enhanced, thereby improving the reliability and durability of the entire process, and avoiding unnecessary material waste and processing costs through precise repair. At the same time, the efficient repair process also reduces the production cycle and labor costs, thereby improving the overall economic benefits.

[0161] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.

[0162] While the embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that many changes, modifications, substitutions and variations can be made to the embodiments without departing from the principles and spirit of the invention.

Claims

1. A process for improving surface defects of a photomask IC chip quartz substrate, characterized in that: The steps include: S1: Material selection and processing: Before manufacturing the photomask quartz substrate, the material of the quartz substrate is selected first, and after the selection is completed, the quartz substrate is processed, and basic material data is obtained after the quartz substrate is processed; S2: Manufacturing optimization: Carry out process manufacturing based on basic material data and monitor the process manufacturing process in real time; S3: Finished product inspection: Inspect the manufactured quartz substrate, confirm the defect data of the quartz substrate according to the inspection results, and sort the defect data into defect parameters. After the defect parameters are sorted, the material repair data is obtained; S4: Finished product repair: Confirm the repair type according to the material repair data, and repair the defects of the quartz substrate according to different repair types. After the defect repair is completed, a standard photomask IC chip quartz substrate is obtained.

2. The process for improving the surface defects of a photomask IC chip quartz substrate according to claim 1, characterized in that: The material of the quartz substrate is selected in S1, and after the selection is completed, the quartz substrate is processed, including: Obtain the manufacturing requirements of the photomask IC chip quartz substrate from the database, and confirm the key factors of the quartz substrate material according to the production requirements; Among them, the key factors include the purity, uniformity, transparency, thermal expansion coefficient, mechanical strength, surface flatness and smoothness, chemical stability and optical uniformity of the quartz substrate; After confirming the quartz substrate material based on key factors, the quartz substrate material is sampled and tested; If the test is qualified, batch purchase will be carried out. If the test fails, the quartz substrate material will be reselected.

3. The process for improving surface defects of a photomask IC chip quartz substrate according to claim 2, characterized in that: The material of the quartz substrate is selected in S1, and after the selection is completed, the quartz substrate is processed, which also includes: Cut the qualified quartz substrate according to manufacturing requirements; Polishing the cut quartz substrate using a precision polishing machine; After polishing, use ultrapure water, ultrasonic cleaner and special cleaning agent to clean the quartz substrate; After cleaning, use high-purity nitrogen to blow dry the quartz substrate; The substrate material data is obtained after the quartz substrate is blow-dried.

4. The process for improving surface defects of a photomask IC chip quartz substrate according to claim 1, characterized in that: In S2, process manufacturing is performed based on basic material data, and the process manufacturing process is monitored in real time, including: The process manufacturing process of quartz substrate is: S201: coating and baking: before coating the quartz substrate, wipe the substrate with a dust-free cloth, pure water and isopropyl alcohol cleaner. After wiping, confirm the coating method according to the process requirements in the manufacturing requirements; the process requirements include pattern size, coating thickness and uniformity, and the coating methods include roll coating, drop coating, spray coating and spin coating; During the coating process, adjust the pressure of the glue roller, the depth of the dropper or the spraying parameters of the spray gun according to the process requirements; After the quartz substrate is coated, it is preheated and baked, wherein the baking temperature is between 90°C and 120°C; the baking time is between 5 minutes and 30 minutes, and hot air circulation is performed during the baking process; S202: Exposure and development: After the quartz substrate is baked, it is subjected to exposure processing, wherein the exposure machine is a stepping exposure machine or a scanning exposure machine, and key parameters of the exposure machine are set, including exposure energy, exposure time, focal length and alignment accuracy; Load the baked quartz substrate onto the wafer stage of the exposure machine and align it. After alignment, start the exposure machine to perform exposure scanning; The exposed quartz substrate is immersed in a developing solution and stirred during the developing process; After the development is completed, the quartz substrate is rinsed with ionized water, and after the rinsing is completed, it is dried using a hot air drying method; S203: etching: selecting an etching method for the dried quartz substrate according to process requirements, wherein the etching method includes wet etching and dry etching; After the etching method is confirmed, the quartz substrate is immersed in an etching solution, which is a hydrofluoric acid aqueous solution; Before the quartz substrate is invaded, the temperature, concentration and etching time of the etching solution are confirmed; The temperature of the etching solution is between 25°C and 40°C; the concentration is 5% and the etching time is between 30 seconds and 5 minutes; After the quartz substrate is etched, an organic solution is used to dissolve the photosensitive adhesive, wherein the organic solution is isopropyl alcohol; After dissolving the photosensitive adhesive, the quartz substrate is sprayed with a solvent to remove the photosensitive adhesive; S204: cleaning: the quartz substrate is cleaned by a plasma cleaning machine after the photosensitive adhesive is removed, and the parameters of the plasma cleaning machine are set before cleaning; Among them, the parameters of the plasma cleaning machine include power, pressure and gas flow rate; the power is between 100W-500W; the pressure is between 50mTorr-200mTorr; the gas flow rate is between 50sccm-200sccm; After cleaning, the quartz substrate is purged with nitrogen; After the purging is completed, the quartz substrate is rinsed with deionized water, wherein the temperature of the deionized water is between 30°C and 50°C, and the rinsing time is between 30 seconds and 5 minutes; The rinsed quartz substrate is subjected to hot air drying treatment, and after the hot air drying treatment, a manufactured photomask IC chip quartz substrate is obtained.

5. The process for improving the surface defects of a photomask IC chip quartz substrate according to claim 4, characterized in that: In S2, the process manufacturing is carried out according to the basic material data, and the process manufacturing process is monitored in real time, which also includes: Collect data for each step of the quartz substrate manufacturing process; Wherein, the online particle data, coating thickness data, temperature data and hot air circulation data in step S201 are collected; Collecting the exposure parameter data, alignment accuracy data, development process data and washing quality data in step S202; Collecting the etching solution parameter data, etching time data and etching depth data in step S203; Collecting the plasma cleaning parameter data, cleaning effect data, drying process data, and purging and flushing data in step S204; The collected data is transmitted to the controller for data analysis, and the process parameters are adjusted when the collected data is not within the preset standard data range.

6. The process for improving surface defects of a photomask IC chip quartz substrate according to claim 1, characterized in that: The quartz substrate manufactured in S3 is tested, the defect data of the quartz substrate is confirmed according to the test results, and the defect data is sorted into defect parameters, including: Inspecting the manufactured quartz substrate, wherein the inspection method includes visual inspection, automatic optical inspection and laser scanning inspection; Visual inspection is to use a low-power optical microscope for preliminary inspection to identify obvious defects on the quartz substrate, and then use a high-power optical microscope to conduct a secondary inspection on the quartz substrate to identify minor defects on the quartz substrate. Among them, obvious defects include scratches, cracks, foreign matter, vacuum and uneven refractive index area; minor defects include minor scratches, microcracks, pattern deviation, surface contamination and local structural abnormalities; Automatic optical inspection is to quickly scan the quartz substrate, identify obvious defects, and then scan the obvious defects in detail; Laser scanning detection uses a laser scanner to measure the height of the pattern on the quartz substrate and the verticality of the pattern sidewall, and analyzes the roughness of the quartz substrate surface; After all quartz substrates are inspected, the inspection data are integrated to obtain material defect data.

7. A process for improving surface defects of a photomask IC chip quartz substrate according to claim 6, characterized in that: The quartz substrate manufactured in S3 is tested, the defect data of the quartz substrate is confirmed according to the test results, and the defect data is sorted into defect parameters, which also includes: Defect classification is performed based on material defect data. Defect classification is based on the shape, size, location and depth of the defect; Shapes include particles, cracks, stains and edge missing; sizes include micro defects, small defects, medium defects and large defects, among which micro defects are less than 10 microns, small defects are between 10-50 microns, medium defects are between 50-200 microns, and large defects are greater than 200 microns; positions include midline areas, edge areas and functional areas; depths include surface defects, shallow defects and deep defects.

8. The process for improving surface defects of a photomask IC chip quartz substrate according to claim 7, characterized in that: The quartz substrate manufactured in S3 is tested, the defect data of the quartz substrate is confirmed according to the test results, and the defect data is sorted into defect parameters, which also includes: The quartz substrates are repaired or discarded according to the defect classification; When the degree of defect exceeds the maximum defect range, the manufactured quartz substrate is discarded; When the degree of defect does not exceed the maximum defect range, the manufactured quartz substrate is repaired; The repaired quartz substrate is marked as material repair data.

9. The process for improving surface defects of a photomask IC chip quartz substrate according to claim 1, characterized in that: In S4, the repair type is confirmed according to the material repair data, and the defects of the quartz substrate are repaired according to different repair types, including: The repair method is confirmed based on the defect depth in the material repair data. When the defect depth is between 10 nanometers and 100 nanometers, the surface laser repair method is used for repair; when the defect depth exceeds 100 nanometers, the internal ion implantation repair method is used for repair; The process of surface laser repair method is to select laser parameters according to the material repair data. The laser parameters include laser wavelength, power, pulse width, repetition frequency and scanning speed. Before laser repair of the repaired quartz substrate, the laser repair equipment is calibrated and the defect position is aligned. After alignment, the laser is started, and the defect area is irradiated according to the selected laser parameters, and the irradiation time and energy are controlled, wherein the irradiation time is between 10ns-500ns, and the energy is between 1mJ-10mJ; After the irradiation is completed, a defective quartz substrate having been repaired is obtained.

10. A process for improving surface defects of a photomask IC chip quartz substrate according to claim 9, characterized in that: Confirm the repair type according to the material repair data in S4, and repair the defects of the quartz substrate according to different repair types, which also includes: The internal ion implantation repair method process is to select the ion type according to the material repair data, wherein the ion types include boron, phosphorus, arsenic and silicon; The selected ions are accelerated in a vacuum, wherein the energy of boron is between 10keV and 100keV; the energy of phosphorus is between 100keV and 500keV; the energy of arsenic is between 200keV and 1MeV; the energy of silicon is between 500keV and 5MeV; Implanting the accelerated ions into the defect depth and region of the defective quartz substrate; The quartz substrate after ion implantation is heat treated, and the quartz substrate is cleaned after the heat treatment; After the cleaning is completed, a defective quartz substrate is repaired; Finally, the quartz substrate repaired by the internal ion implantation repair method and the quartz substrate repaired by the surface laser repair method are used as photomask IC chip quartz substrates with improved surface defects.

Images