Radio frequency power amplifier and radio frequency front-end module

Abstract

The invention discloses a radio frequency power amplifier and a radio frequency front-end module. The radio frequency power amplifier comprises an input matching network, a biasing circuit, one or more radio frequency power amplification unit circuits connected in parallel, an output matching network and a peak voltage limiting circuit, the output end of the input matching network is connected with the first input end of the radio frequency power amplification unit circuit; the output end of the biasing circuit is connected with the second input end of the radio frequency power amplification unit circuit; the output end of the radio frequency power amplification unit circuit is connected with the input end of the output matching network through the first capacitor; and the peak voltage limiting circuit is connected with the output end of the biasing circuit and the output end of the radio frequency power amplification unit circuit. The radio frequency front end module comprises a radio frequency power amplifier. The peak voltage limiting circuit is connected with the output end of the biasing circuit and the output end of the radio frequency power amplification unit circuit, so that the peak voltage limiting effect is achieved, and meanwhile, deterioration of the peak voltage limiting circuit to the performance of the main body power amplifier is reduced.

Description

Technical Field

[0001] The present invention generally relates to the field of radio frequency integrated circuits, and specifically relates to a radio frequency power amplifier and a radio frequency front-end module. Background Art

[0002] The semiconductor devices used in RF power amplifiers are subject to maximum operating voltage limits. If the maximum operating voltage is exceeded, the device may fail permanently.

[0003] For a single-stage common emitter power amplifier, the emitter of transistors such as BJT (Bipolar Junction Transistor) or HBT (Heterojunction Bipolar Transistor) is grounded, the RF signal is input from the base of the transistor, and the collector is output. At high output power, due to the presence of nonlinear factors such as harmonics, the collector peak waveform of the transistor can sometimes be as high as three times the collector supply DC bias voltage. When the collector voltage of the transistor reaches a certain threshold and exceeds the transistor breakdown voltage, the transistor will produce irreversible failure.

[0004] For a single-stage common second-pole power amplifier, the second pole of transistors such as MOS (Metal Oxide Semi-conductor FET) or HEMT (High Electron Mobility Transistor) is grounded, and the RF signal is input from the first pole of the transistor and output from the third pole. Under high output power, due to the presence of nonlinear factors such as harmonics, the collector peak waveform of the transistor can sometimes be as high as three times the collector supply DC bias voltage. When the third-pole voltage of the transistor reaches a certain threshold and exceeds the transistor breakdown voltage, the transistor will produce irreversible failure.

[0005] While the process continues to improve the breakdown voltage capability of transistor devices, effective prevention is also needed on the circuit design side. From the perspective of circuit design, in order to solve the breakdown problem, it is necessary to dynamically detect and limit the voltage swing at the output end of the transistor in the power amplifier in real time, so the peak voltage limiting circuit (PVL, Peak Voltage Limiter) appears.

[0006] In the prior art, patent US8487705B2 adopts an output end resistor voltage divider structure, referring to Figure 1, the output signal of the amplifier is fed back to the input to protect the amplifier from overvoltage. However, the disadvantage of the resistor voltage divider is that the voltage divider resistance value cannot be too large, otherwise it will not play a feedback role, so the voltage divider resistance will generate current in the ground path. Because the amplifier is usually turned off through the Vbase terminal, and the Vcc terminal is normally open, so when this structure is used, the current in the resistor path cannot be turned off, which increases the off-state power consumption of the system; Patent US10284153B2 uses an output terminal resistor and diode series structure, refer to Figure 2 , the output signal of the amplifier is fed back to the input to protect the amplifier from overvoltage, but it will cause the amplifier's high-temperature output 1dB compression point (P1dB) to drop. The reason is that the diode threshold has three-temperature fluctuations. The low-temperature threshold voltage of the diode is high, and the high-temperature threshold voltage is low. When the protection circuit can just limit the maximum collector voltage at a low temperature of -40°C, it will trigger the peak voltage limit in advance at a high temperature of 105°C, thereby affecting the amplifier's P1dB. Both have defects. Summary of the invention

[0007] In view of the above-mentioned defects or deficiencies in the prior art, it is desired to provide a radio frequency power amplifier and a radio frequency front-end module.

[0008] In a first aspect, an embodiment of the present invention provides a radio frequency power amplifier, comprising: an input matching network, a bias circuit, one or more parallel radio frequency power amplification unit circuits, an output matching network, and a peak voltage limiting circuit; wherein,

[0009] The output end of the input matching network is connected to the first input end of the RF power amplification unit circuit;

[0010] The output end of the bias circuit is connected to the second input end of the RF power amplification unit circuit, and the input end of the bias circuit is connected to a DC bias voltage;

[0011] The output end of the radio frequency power amplification unit circuit is connected to the input end of the output matching network via a first capacitor;

[0012] The peak voltage limiting circuit is connected to the output end of the bias circuit and the output end of the radio frequency power amplification unit circuit;

[0013] The input end of the input matching network is the signal input end of the RF power amplifier, and the output end of the output matching network is the signal output end of the RF power amplifier.

[0014] In some embodiments, the peak voltage limiting circuit includes a detection circuit and a judgment circuit connected to each other;

[0015] The detection circuit includes a first resistor, a first diode group, a second diode group and a second resistor connected in series in sequence, the first diode group includes one or more first diodes connected in series, and the second diode group includes one or more second diodes connected in series;

[0016] One end of the first resistor away from the first diode group is connected to the RF power amplification unit circuit; the anode of the first diode is closer to the first resistor than the cathode of the first diode; the cathode of the second diode is closer to the second resistor than the anode of the second diode; and one end of the second resistor away from the second diode is grounded;

[0017] The judgment circuit includes a first transistor, a first electrode of the first transistor is connected to an end of the first diode group close to the second diode group, a second electrode of the first transistor is connected to the output end of the bias circuit, and a third electrode of the first transistor is grounded.

[0018] In some embodiments, the bias circuit includes a second transistor, a third transistor, a fourth transistor, and a third resistor;

[0019] The input end of the bias circuit is connected to one end of the third resistor and the second electrode of the fourth transistor respectively;

[0020] The other end of the third resistor is respectively connected to the first electrode of the second transistor, the second electrode of the second transistor and the first electrode of the fourth transistor;

[0021] The third electrode of the second transistor is connected to the first electrode of the third transistor and the second electrode of the third transistor respectively;

[0022] The third electrode of the third transistor is grounded, and the third electrode of the fourth transistor is connected to the output end of the bias circuit.

[0023] In some embodiments, the bias circuit further includes a second capacitor and a third capacitor;

[0024] One end of the second capacitor is connected to one end of the third resistor and the second electrode of the fourth transistor respectively, and the other end of the second capacitor is grounded;

[0025] One end of the third capacitor is respectively connected to the other end of the third resistor, the first electrode of the second transistor, the second electrode of the second transistor and the first electrode of the fourth transistor, and the other end of the third capacitor is grounded.

[0026] In some embodiments, the RF power amplification unit circuit includes an amplifying transistor, a fourth capacitor and a fourth resistor;

[0027] One end of the fourth capacitor is the first input end of the RF power amplification unit circuit, one end of the fourth capacitor is connected to the output end of the input matching network, and the other end of the fourth capacitor is connected to the first electrode of the amplification transistor;

[0028] One end of the fourth resistor is the second input end of the RF power amplification unit circuit, one end of the fourth resistor is connected to the output end of the bias circuit, and the other end of the fourth resistor is connected to the first electrode of the amplification transistor;

[0029] The second electrode of the amplifier transistor is connected to the supply voltage via a supply inductor, and the third electrode of the amplifier transistor is grounded.

[0030] In some embodiments, the first capacitor is a DC blocking capacitor; and / or,

[0031] The fourth capacitor is a DC blocking capacitor; and / or,

[0032] The fourth resistor is a ballast stabilization resistor.

[0033] In some embodiments, the input matching network is any one or more combinations of an L-type matching network, a T-type matching network or a π-type matching network.

[0034] In some embodiments, the output matching network is any one or more combinations of an L-type matching network, a T-type matching network or a π-type matching network.

[0035] In a second aspect, an embodiment of the present invention further provides a radio frequency front-end module, comprising the radio frequency power amplifier as described above.

[0036] Compared with the prior art, the peak voltage limiting circuit in the RF power amplifier provided in the embodiment of the present invention connects the output end of the bias circuit and the output end of the RF power amplification unit circuit. The peak voltage limiting circuit preferably includes a first transistor, and a first resistor, a first diode group, a second diode group and a second resistor connected in series in sequence. While playing the role of peak voltage limiting, the peak voltage limiting circuit reduces the deterioration of the performance of the main power amplifier. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Other features, objects and advantages of the present invention will become more apparent from the detailed description of non-limiting embodiments made with reference to the following drawings:

[0038] Figure 1 A schematic diagram of the structure of a peak voltage limiting circuit disclosed in the prior art;

[0039] Figure 2 It is a structural schematic diagram of another peak voltage limiting circuit disclosed in the prior art;

[0040] Figure 3 A schematic diagram of the structure of a radio frequency power amplifier provided in an embodiment of the present invention;

[0041] Figure 4 A schematic diagram of the structure of a bias circuit provided in an embodiment of the present invention;

[0042] Figure 5 A schematic diagram of the structure of an input matching network provided by an embodiment of the present invention;

[0043] Figure 6 A schematic diagram of the structure of an output matching network provided by an embodiment of the present invention;

[0044] Figure 7 Another schematic diagram of the structure of a radio frequency power amplifier provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0045] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the relevant invention, rather than to limit the invention. It should also be noted that, for ease of description, only the parts related to the invention are shown in the accompanying drawings.

[0046] It should be noted that, in the absence of conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0047] It should be noted that the transistors mentioned in the following embodiments of the present invention may preferably be NPN transistors, in which the first electrode is the base, the second electrode is the collector, the third electrode is the emitter, and the current flows from the collector to the emitter; or, the transistors mentioned in the following embodiments of the present invention may preferably be PNP transistors, in which the first electrode is the base, the second electrode is the emitter, the third electrode is the collector, and the current flows from the emitter to the collector; or, the transistors mentioned in the following embodiments of the present invention may preferably be MOS transistors, in which the first electrode is the gate, the second electrode is the source, and the third electrode is the drain.

[0048] For the convenience of introducing the radio frequency power amplifier provided by the present invention, the transistors involved are all NPN transistors.

[0049] like Figure 3 As shown, an embodiment of the present invention provides a radio frequency power amplifier, comprising: an input matching network 11, a bias circuit 12, a radio frequency power amplification unit circuit 13, an output matching network 14 and a peak voltage limiting circuit 15; wherein,

[0050] The output end of the input matching network 11 is connected to the first input end of the RF power amplification unit circuit 13;

[0051] The output end of the bias circuit 12 is connected to the second input end of the RF power amplification unit circuit 13, and the input end of the bias circuit 12 is connected to the DC bias voltage VB;

[0052] The output end of the RF power amplification unit circuit 13 is connected to the input end of the output matching network 14 via the first capacitor C1;

[0053] The peak voltage limiting circuit 15 is connected to the output end of the bias circuit 12 and the output end of the RF power amplification unit circuit 13;

[0054] The input end of the input matching network 11 is the signal input end of the RF power amplifier, and the output end of the output matching network 14 is the signal output end of the RF power amplifier.

[0055] In the RF power amplifier provided in the embodiment of the present invention, the peak voltage limiting circuit 15 is connected between the output end of the bias circuit 12 and the output end of the RF power amplification unit 13, and plays a protective role for the transistors in the RF power amplification unit 13. While playing a peak voltage limiting role, it reduces the deterioration of the performance of the main power amplifier caused by the peak voltage limiting circuit.

[0056] In some embodiments, the peak voltage limiting circuit 15 includes a detection circuit and a judgment circuit connected;

[0057] The detection circuit includes a first resistor R1, a first diode group, a second diode group and a second resistor R2 connected in series in sequence, the first diode group includes one or more first diodes 151 connected in series, and the second diode group includes one or more second diodes 152 connected in series;

[0058] One end of the first resistor R1 away from the first diode group is connected to the RF power amplification unit circuit 13; the anode of the first diode 151 is closer to the first resistor R1 than the cathode of the first diode 151; the cathode of the second diode 152 is closer to the second resistor R2 than the anode of the second diode 152; and one end of the second resistor R2 away from the second diode 152 is grounded;

[0059] The judgment circuit includes a first transistor Q1, a first electrode of the first transistor Q1 is connected to an end of the first diode group close to the second diode group, a second electrode of the first transistor Q1 is connected to the output end of the bias circuit 12, and a third electrode of the first transistor Q1 is grounded.

[0060] Reference Figure 3In this embodiment, the first diode group includes a first diode 151, the second diode group includes a second diode 152, the end of the first resistor R1 away from the first diode 151 and the output end of the RF power amplification unit 13 are connected to the first node n10, and the first node n10 is a node whose voltage is to be detected and limited; the second node n20 is connected to the first electrode of the first transistor Q1, the end of the first diode group away from the first resistor R1, and the end of the second diode group away from the second resistor R2; the third node n30 is connected to the second electrode of the first transistor Q1, the output end of the bias circuit 12, and the second input end of the RF power amplification unit circuit 13.

[0061] In this embodiment, the peak voltage limiting circuit 15 adopts an adaptive bias technology, and does not need to add an additional DC bias power supply and bias circuit. Figure 3 As shown, the DC voltage output by the RF power amplifier unit circuit 13 provides a DC bias to the series branch of the first resistor R1, the first diode 151, the second diode 152 and the second resistor R2, the DC voltage obtained by the second node n20 provides a base DC bias to the first transistor Q1, and the third node n30 provides a DC bias to the collector of the first transistor Q1. According to the DC bias voltage of the first node n10, the number and size of the series connection of the first diode 151 and the second diode 152, as well as the resistance values ​​of the first resistor R1 and the second resistor R2 are reasonably selected, so that the first transistor Q7 is in a state of not being turned on but about to be turned on. In this way, under normal power operation, the peak voltage limiting circuit 15 is not turned on, which does not affect the normal working performance; when the power increases to a certain extent, the peak voltage limiting circuit 15 starts to work. The peak voltage limiting circuit 15 can perform voltage dynamic detection, judge and compare, and output a signal to act on the RF amplifier circuit unit 13, which plays a role in peak voltage limiting.

[0062] In some embodiments, Figure 4 As shown, the bias circuit 12 includes a second transistor Q2, a third transistor Q3, a fourth transistor Q4 and a third resistor R3;

[0063] The input end of the bias circuit 12 is respectively connected to one end of the third resistor R3 and the second electrode of the fourth transistor Q4;

[0064] The other end of the third resistor R3 is respectively connected to the first electrode of the second transistor Q2, the second electrode of the second transistor Q2 and the first electrode of the fourth transistor Q4;

[0065] The third electrode of the second transistor Q2 is connected to the first electrode of the third transistor Q3 and the second electrode of the third transistor Q3 respectively;

[0066] A third electrode of the third transistor Q3 is grounded, and a third electrode of the fourth transistor Q4 is connected to the output end of the bias circuit 12 .

[0067] Among them, refer to Figure 4 , the fourth node n40 in the bias circuit 12 is connected to the input end of the bias circuit 12, one end of the third resistor R3 and the second electrode of the fourth transistor Q4; the fifth node n50 is connected to the other end of the third resistor R3, the first electrode of the second transistor Q2, the second electrode of the second transistor Q2 and the first electrode of the fourth transistor Q4. The DC level of the fourth node n40 is provided to the first electrode of the fourth transistor Q4 through the third resistor R3 and the fifth node n50 after voltage division of the second transistor Q2 and the third transistor Q3. The fourth transistor Q4 works as an emitter follower and provides a certain current driving capability. The level output by the bias circuit 12 is close to the turn-on voltage (Vbe) of an emitter PN junction.

[0068] Further, such as Figure 4 As shown, the bias circuit 12 also includes a second capacitor C2 and a third capacitor C3;

[0069] One end of the second capacitor C2 is respectively connected to the input end of the bias circuit 12, one end of the third resistor R3, and the second electrode of the fourth transistor Q4, and the other end of the second capacitor C2 is grounded;

[0070] One end of the third capacitor C3 is respectively connected to the other end of the third resistor R3, the first electrode of the second transistor Q2, the second electrode of the second transistor Q2 and the first electrode of the fourth transistor Q4, and the other end of the third capacitor C3 is grounded.

[0071] The fourth node n40 is connected to one end of the second capacitor C2, and the fifth node n50 is connected to one end of the third capacitor C3. The second capacitor C2 and the third capacitor C3 play the role of radio frequency filtering and voltage stabilization.

[0072] In some embodiments, the RF power amplification unit circuit 13 includes an amplification transistor Q5, a fourth capacitor C4 and a fourth resistor R4;

[0073] One end of the fourth capacitor C4 is the first input end of the RF power amplification unit circuit 13, one end of the fourth capacitor C4 is connected to the output end of the input matching network 11, and the other end of the fourth capacitor C4 is connected to the first electrode of the amplification transistor Q5;

[0074] One end of the fourth resistor R4 is the second input end of the RF power amplifying unit circuit 13, one end of the fourth resistor R4 is connected to the output end of the bias circuit 12, and the other end of the fourth resistor R4 is connected to the first electrode of the amplifying transistor Q5;

[0075] A second electrode of the amplifying transistor Q5 is connected to a power supply voltage Vcc via a power supply inductor L1 , and a third electrode of the amplifying transistor Q5 is grounded.

[0076] As the output power increases, the swing of the first node n10 also increases, and the corresponding voltage of the second node n20 is raised, and the first transistor Q1 gradually tends to turn on. When the swing of the first node n10 increases to a certain extent, the collector current of the first transistor Q1 is extracted from the third node n30, so that the voltage of the third node n30 decreases, and at the same time, the base current flowing into the amplifier transistor Q5 decreases, thereby suppressing the increase in the output power of the amplifier transistor Q5 and the increase in the collector voltage swing, playing a role of negative feedback, protecting the amplifier transistor Q5, and preventing overvoltage burning.

[0077] In some embodiments, the first capacitor C1 is a DC blocking capacitor; and / or,

[0078] The fourth capacitor C4 is a DC blocking capacitor; and / or,

[0079] The fourth resistor R4 is a ballast stabilizing resistor.

[0080] The first capacitor C1 is a DC blocking capacitor, and the fourth capacitor C4 is a DC blocking capacitor, which effectively reduces RF loss; the fourth resistor R4 is a ballast stabilization resistor, which can avoid causing a reduction in the output power of the RF power amplification unit circuit 13.

[0081] In some embodiments, the input matching network 11 is any one or more combinations of an L-type matching network, a T-type matching network or a π-type matching network.

[0082] For example, the input matching network 11 is a T-type matching network. Figure 5 The input matching network 11 includes a second inductor L2, a third inductor L3 and a fifth capacitor C5, one end of the second inductor L2 is the input end of the input matching network 11, the other end of the second inductor L2 is respectively connected to one end of the third inductor L3 and one end of the fifth capacitor C5, the other end of the third inductor L3 is connected to the first input end of the RF power amplification unit circuit 13, and the other end of the fifth capacitor C5 is grounded.

[0083] In some embodiments, the output matching network 14 is any one or more combinations of an L-type matching network, a T-type matching network, or a π-type matching network.

[0084] For example, the output matching network 14 is a T-type matching network. Figure 6The output matching network 14 includes a sixth capacitor C6, a seventh capacitor C7 and a fourth inductor L4. One end of the sixth capacitor C6 is the input end of the output matching network 14. The other end of the sixth capacitor C6 is respectively connected to one end of the seventh capacitor C7 and one end of the fourth inductor L4 and is grounded. The other end of the seventh capacitor C7 is connected to the output end of the output matching network 14, and the other end of the fourth inductor L4 is grounded.

[0085] The input matching network and the output matching network are composed of capacitors and inductors. The input matching network is used to match the impedance between the input signal and the RF power amplifier unit circuit, and the output matching network is used to filter the signal output by the RF power amplifier unit circuit and output impedance matching. The input matching network and the output matching network can use any one of the L-type matching network, T-type matching network or π-type matching network to achieve the above-mentioned effects and further optimize the performance of the RF power amplifier.

[0086] like Figure 7 As shown, an embodiment of the present invention further provides a radio frequency power amplifier, including: an input matching network 11, a bias circuit 12, a plurality of parallel radio frequency power amplification unit circuits 13, an output matching network 14 and a peak voltage limiting circuit 15. Figure 3 The RF power amplifier shown in the example comprises a RF power amplification unit circuit 13. Figure 3 The difference between the RF power amplifier of the example is that the embodiment includes two parallel RF power amplification unit circuits 13, and the other structures are the same. Figure 3 The RF power amplifier is not described in detail here. When the output power of a RF power amplification unit circuit is insufficient, the output power can be met by connecting N RF power amplification unit circuits in parallel.

[0087] In the radio frequency power amplifier proposed in the embodiment of the present invention, the detection circuit of the peak voltage limiting circuit uses a diode and a resistor in series to divide the voltage. Since the voltage and current of the diode are in an exponential relationship, the current is very small in the critical on state and very large when it is on, so it can reduce the off-state current without affecting the peak voltage limiting function in the on state. When the power increases to a certain extent, after the peak voltage limiting circuit starts to work, due to the exponential relationship characteristics of the diode, the limiting effect is better than the ordinary linear relationship.

[0088] Moreover, the peak voltage limiting circuit in the embodiment of the present invention is less affected by process fluctuations. Although process fluctuations may cause changes in the threshold turn-on voltage of diodes and transistors, the detection circuit of this embodiment uses a diode and the judgment circuit uses a transistor, and the two will change synchronously, effectively suppressing the impact of process fluctuations.

[0089] The embodiment of the present invention further provides a radio frequency front-end module, comprising the radio frequency power amplifier mentioned above. The radio frequency front-end module also has the characteristics of the radio frequency power amplifier mentioned above, which will not be described in detail here.

[0090] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0091] The present invention uses first, second, etc. to describe various information, but such information should not be limited to these terms. These terms are only used to distinguish the same type of information from each other. For example, without departing from the scope of the present invention, the first information may also be referred to as the second information, and similarly, the second information may also be referred to as the first information.

[0092] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, it can also be the internal connection of two components, it can be a wireless connection, or it can be a wired connection. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0093] The above description is only a preferred embodiment of the present invention and an explanation of the technical principles used. Those skilled in the art should understand that the scope of the invention involved in the present invention is not limited to the technical solution formed by a specific combination of the above technical features, but should also cover other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the inventive concept. For example, the above features are replaced with the technical features with similar functions disclosed in the present invention (but not limited to) to form a technical solution.

Claims

1. A radio frequency power amplifier, characterized in that: include: An input matching network, a bias circuit, one or more parallel RF power amplifier unit circuits, an output matching network and a peak voltage limiting circuit; wherein, The output end of the input matching network is connected to the first input end of the RF power amplification unit circuit; The output end of the bias circuit is connected to the second input end of the RF power amplification unit circuit, and the input end of the bias circuit is connected to a DC bias voltage; The output end of the radio frequency power amplification unit circuit is connected to the input end of the output matching network via a first capacitor; The peak voltage limiting circuit is connected to the output end of the bias circuit and the output end of the radio frequency power amplification unit circuit; The input end of the input matching network is the signal input end of the RF power amplifier, and the output end of the output matching network is the signal output end of the RF power amplifier.

2. The radio frequency power amplifier according to claim 1, characterized in that: The peak voltage limiting circuit includes a detection circuit and a judgment circuit connected to each other; The detection circuit includes a first resistor, a first diode group, a second diode group and a second resistor connected in series in sequence, the first diode group includes one or more first diodes connected in series, and the second diode group includes one or more second diodes connected in series; One end of the first resistor away from the first diode group is connected to the RF power amplification unit circuit; the anode of the first diode is closer to the first resistor than the cathode of the first diode; the cathode of the second diode is closer to the second resistor than the anode of the second diode; and one end of the second resistor away from the second diode is grounded; The judgment circuit includes a first transistor, a first electrode of the first transistor is connected to an end of the first diode group close to the second diode group, a second electrode of the first transistor is connected to an output end of the bias circuit, and a third electrode of the first transistor is grounded.

3. The radio frequency power amplifier according to claim 1, characterized in that: The bias circuit includes a second transistor, a third transistor, a fourth transistor and a third resistor; The input end of the bias circuit is connected to one end of the third resistor and the second electrode of the fourth transistor respectively; The other end of the third resistor is respectively connected to the first electrode of the second transistor, the second electrode of the second transistor and the first electrode of the fourth transistor; The third electrode of the second transistor is connected to the first electrode of the third transistor and the second electrode of the third transistor respectively; The third electrode of the third transistor is grounded, and the third electrode of the fourth transistor is connected to the output end of the bias circuit.

4. The radio frequency power amplifier according to claim 3, characterized in that: The bias circuit also includes a second capacitor and a third capacitor; One end of the second capacitor is connected to one end of the third resistor and the second electrode of the fourth transistor respectively, and the other end of the second capacitor is grounded; One end of the third capacitor is respectively connected to the other end of the third resistor, the first electrode of the second transistor, the second electrode of the second transistor and the first electrode of the fourth transistor, and the other end of the third capacitor is grounded.

5. The radio frequency power amplifier according to claim 1, characterized in that: The radio frequency power amplification unit circuit comprises an amplifying transistor, a fourth capacitor and a fourth resistor; One end of the fourth capacitor is the first input end of the RF power amplification unit circuit, one end of the fourth capacitor is connected to the output end of the input matching network, and the other end of the fourth capacitor is connected to the first electrode of the amplification transistor; One end of the fourth resistor is the second input end of the RF power amplification unit circuit, one end of the fourth resistor is connected to the output end of the bias circuit, and the other end of the fourth resistor is connected to the first electrode of the amplification transistor; The second electrode of the amplifier transistor is connected to the supply voltage via a supply inductor, and the third electrode of the amplifier transistor is grounded.

6. The radio frequency power amplifier according to claim 5, characterized in that: The first capacitor is a DC blocking capacitor; and / or, The fourth capacitor is a DC blocking capacitor; and / or, The fourth resistor is a ballast stabilization resistor.

7. The radio frequency power amplifier according to claim 1, characterized in that: The input matching network is any one or more combinations of an L-type matching network, a T-type matching network or a π-type matching network.

8. The radio frequency power amplifier according to claim 1, characterized in that: The output matching network is any one or more combinations of an L-type matching network, a T-type matching network or a π-type matching network.

9. A radio frequency front-end module, characterized in that: Comprising a radio frequency power amplifier as described in any one of claims 1-8.

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