Low-damage sputtering cathode and sputtering coating method

Abstract

The invention relates to a low-damage sputtering cathode and a sputtering coating method and relates to the technical field of sputtering coating, the sputtering cathode comprises a shell, a first magnetic ring, a first target material ring, a second magnetic ring and a second target material ring, the shell is annular, and a mounting plate is arranged at one end of the shell; the first magnetic ring, the first target material ring, the second magnetic ring and the second target material ring are located in the shell and are all connected with the mounting plate; the first magnetic ring, the first target material ring, the second magnetic ring and the second target material ring are coaxially arranged, the first target material ring is arranged on the outer side of the first magnetic ring in a sleeving mode, the second target material ring is arranged on the outer side of the first target material ring in a sleeving mode, the second magnetic ring is arranged on the outer side of the second target material ring in a sleeving mode, and the inner side wall of the second target material ring and the outer side wall of the first target material ring are arranged in a spaced mode. When the sputtering cathode is used for sputter coating, the kinetic energy of sputtered particles can be reduced, so that the damage of the sputtered particles to a base material is reduced.

Description

Technical Field

[0001] The present application relates to the technical field of sputtering coating, and in particular to a low-damage sputtering cathode and a sputtering coating method. Background Art

[0002] Sputtering coating technology is to bombard the target surface with ions. The phenomenon of atoms of the target being knocked out is called sputtering. The atoms produced by sputtering are deposited on the surface of the substrate to form a film, which is called sputtering coating. Usually, gas discharge is used to generate gas ionization. Its positive ions bombard the cathode target at high speed under the action of the electric field, knocking out atoms or molecules of the cathode target, flying to the surface of the substrate to be plated and depositing into a thin film. At present, in the fields of microelectronics, optical thin films, semiconductor manufacturing and materials science, sputtering coating technology is widely used as an important surface treatment technology to prepare high-quality and high-precision thin film materials.

[0003] In the existing sputtering coating process, commonly used cathode materials such as metal targets will produce sputtered particles under high-energy ion bombardment, and these particles will be deposited on the substrate to form a thin film. However, this process is often accompanied by thermal damage, radiation damage and microstructural changes caused by particle impact on the substrate surface, especially on temperature-sensitive or fine-structured substrates. These problems are particularly prominent.

[0004] Based on the above problems, the common sputtering coating method currently mainly adopts magnetron sputtering technology. Magnetron sputtering controls the trajectory of electrons by introducing a magnetic field, increases the probability of collision between electrons and gas molecules, and thus increases the sputtering yield. However, this technology still faces the problem of high-energy particles directly bombarding the substrate and causing damage to the substrate, especially when sputtering at high power. Summary of the invention

[0005] The present application provides a low-damage sputtering cathode and a sputtering coating method, the purpose of which is to reduce the damage of sputtering particles to a substrate by optimizing the distribution of magnetic field and electric field.

[0006] In the first aspect, the present application provides a low-damage sputtering cathode using the following technical solution: A low-damage sputtering cathode comprises an outer shell, a first magnetic ring, a first target material ring, a second magnetic ring and a second target material ring, the outer shell is annular, and a mounting plate for closing the outer shell is arranged at one end of the outer shell, the first magnetic ring, the first target material ring, the second magnetic ring and the second target material ring are all located in the outer shell, and the first magnetic ring, the first target material ring, the second magnetic ring and the second target material ring are all connected to the mounting plate; the first magnetic ring, the first target material ring, the second magnetic ring and the second target material ring are all coaxially arranged, the first target material ring is sleeved on the outside of the first magnetic ring, the second target material ring is sleeved on the outside of the first target material ring, the second magnetic ring is sleeved on the outside of the second target material ring, and the inner side wall of the second target material ring is spaced apart from the outer side wall of the first target material ring.

[0007] By adopting the above technical solution, firstly, the coordination of the first magnetic ring and the second magnetic ring can establish a stable magnetic field in the space between the first magnetic ring and the second magnetic ring. Secondly, the first target ring and the second target ring form a double-layer annular target, which can increase the target surface area relative to the plane target, thereby increasing the effective sputtering area of ​​the target and improving the sputtering efficiency of the particles.

[0008] Since the first target ring and the second target ring are both located between the first magnetic ring and the second magnetic ring, the first target ring and the second target ring are in a stable magnetic field. On the one hand, the setting of the magnetic field helps to improve the utilization rate of the target material. Under the action of the magnetic field, more sputtered atoms or molecules are generated on the surface of the target material per unit time. On the other hand, the setting of the magnetic field forms a stable annular plasma region between the first target ring and the second target ring, which makes the sputtered particles contact the annular plasma region before reaching the substrate, thereby weakening the kinetic energy of the sputtered particles, which greatly reduces the thermal damage and microstructural changes of the sputtered particles to the substrate, and realizes low-damage sputtering coating. In addition, by designing the strength of the magnetic field, the distance between the first target ring and the second target ring, and the sputtering power, the energy of the sputtered particles can be controlled, thereby further reducing the damage to the substrate.

[0009] Therefore, the present application forms a double-layer annular magnet through the first magnetic ring and the second magnetic ring, and forms a double-layer annular target material through the first target ring and the second target ring. The coordinated arrangement of the double-layer annular magnet and the double-layer annular target material can reduce the damage of the sputtered particles to the substrate during sputtering coating.

[0010] Optionally, the magnetic poles of the outer side of the first magnetic ring and the inner side of the second magnetic ring are opposite.

[0011] By adopting the above technical solution, the magnetic poles of the outer side of the first magnetic ring and the inner side of the second magnetic ring are opposite, which can form an effective magnetic field gradient between the first magnetic ring and the second magnetic ring. Such a magnetic field setting can significantly improve the stability of plasma and the movement efficiency of electrons.

[0012] Optionally, a DC power supply is also included, the first target ring and the second target ring are electrically connected to the negative pole of the DC power supply, the shell is electrically connected to the positive pole of the linear power supply, and the first target ring and the second target ring are insulated from the shell.

[0013] By adopting the above technical solution, the first target ring and the second target ring are electrically connected to the negative pole of the DC power supply, and the shell is electrically connected to the positive pole of the DC power supply. This allows an effective electric field to be formed between the first target ring and the second target ring and the shell. The existence of the electric field greatly promotes the electrons to be pulled out from the target surface, increases the sputtering yield, and thus improves the sputtering efficiency and coating rate. In addition, the coordinated use of the electric field and the magnetic field can further optimize the kinetic energy of the sputtered particles and reduce damage to the substrate by precisely controlling the distribution of the electric field and the magnetic field. This design not only improves the quality and uniformity of the coating, but also helps to extend the service life of the cathode and reduce maintenance and operating costs.

[0014] Optionally, the outer wall of the second magnetic ring is spaced apart from the inner wall of the shell and forms a first cooling water channel, and a first tube is arranged on the mounting plate, and the first tube is connected to the first cooling water channel.

[0015] By adopting the above technical solution, the first cooling water channel is set between the second magnetic ring and the outer shell. The cooling water can be passed into the first cooling water channel through the first pipe, and the cooling water in the first cooling water channel can also be discharged through the first pipe. Therefore, the cooling water can cool the outer shell and the second magnetic ring, thereby increasing the service life of the sputtering cathode.

[0016] Optionally, the inner wall of the second magnetic ring is spaced apart from the outer wall of the second target ring and forms a second cooling water channel, and a second tube is arranged on the mounting plate, and the second tube is connected to the second cooling water channel.

[0017] By adopting the above technical solution, the second cooling water channel is set between the second magnetic ring and the second target ring. The cooling water can be passed into the second cooling water channel through the second pipe, and the cooling water in the second cooling water channel can also be discharged through the second pipe. This can cool the second magnetic ring and the second target ring, which can further improve the service life of the sputtering cathode.

[0018] Optionally, the first cooling water channel is connected to the second cooling water channel.

[0019] By adopting the above technical solution, since the first cooling water channel and the second cooling water channel are interconnected, cooling water can be injected into the first cooling water channel through the first pipe, and the cooling water can flow between the first cooling water channel and the second cooling water channel, and the cooling water can be discharged from the second cooling water channel through the second pipe. The flowing cooling water can cool the housing, the second magnetic ring and the second target ring. Since the first cooling water channel and the second cooling water channel are interconnected, the temperature of the cooling water in the first cooling water channel and the second cooling water channel is uniform, which can improve the uniformity of the cooling of the sputtering cathode, and further improve the service life of the sputtering cathode.

[0020] Optionally, the inner wall of the first target ring is spaced apart from the outer wall of the first magnetic ring and forms a third cooling water channel, and a third tube is arranged on the mounting plate, and the third tube is connected to the third cooling water channel.

[0021] By adopting the above technical solution, a third cooling water channel is set between the first target ring and the first magnetic ring. The cooling water can be introduced into the third cooling water channel through the third pipe, and the cooling water in the third cooling water channel can also be discharged through the third pipe. This can cool the first magnetic ring and the first target ring, thereby increasing the service life of the sputtering cathode.

[0022] Optionally, a fourth tube is provided on the mounting plate, the fourth tube is connected to the inner space of the first magnetic ring, and the inner space of the first magnetic ring is connected to the third cooling water channel.

[0023] By adopting the above technical solution, since the internal space of the first magnetic ring is in communication with the third cooling water flow channel, cooling water can be injected into the third cooling water flow channel through the third pipe, and the cooling water flows between the internal space of the first magnetic ring and the third cooling water flow channel, and finally the cooling water in the internal space of the first magnetic ring is discharged through the fourth pipe. This can increase the contact area between the second magnetic ring and the cooling water, and thus improve the cooling efficiency of the second magnetic ring.

[0024] In a second aspect, a sputtering coating method provided by the present application adopts the following technical solution: A sputtering coating method, using the above-mentioned low-damage sputtering cathode to perform sputtering coating, includes the following steps: assembling sputtering coating equipment; starting a vacuum pump to evacuate the sputtering chamber of the sputtering coating equipment; introducing working gas into the sputtering chamber of the sputtering coating equipment; starting the sputtering coating setting, setting the power parameters according to actual needs, igniting the sputtering cathode, starting the sputtering coating process, until the sputtering coating is completed.

[0025] By adopting the above technical solution and using the above sputtering cathode to perform sputtering coating processing, coating can be performed on the surface of the substrate and damage to the substrate can be reduced.

[0026] In summary, the present application includes at least one of the following beneficial technical effects: 1. The present application can reduce the kinetic energy of sputtered particles during sputtering coating by coordinating the first magnetic ring, the second magnetic ring, the first target ring and the second target ring, thereby reducing the damage of the sputtered particles to the substrate.

[0027] 2. This application connects the first target ring and the second target ring to the negative pole of the DC power supply, and connects the outer shell to the positive pole of the DC power supply, so that an effective electric field is formed in the sputtering cathode. The existence of the electric field increases the sputtering yield, thereby improving the sputtering efficiency and the coating rate. At the same time, the coordinated use of the electric field and the magnetic field can further optimize the kinetic energy of the sputtered particles and reduce damage to the substrate by precisely controlling the distribution of the electric field and the magnetic field.

[0028] 3. The present application can achieve cooling of the sputtering cathode through the coordinated arrangement of the first cooling water channel, the second cooling water channel and the third cooling water channel, thereby increasing the service life of the sputtering cathode. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 It is a schematic diagram of the overall structure of the sputtering cathode of Example 1 of the present application.

[0030] Figure 2 It is a schematic diagram of the cross-sectional structure of the sputtering cathode of Example 1 of the present application.

[0031] Figure 3 It is a schematic diagram of the internal structure of the sputtering cathode of Example 1 of the present application.

[0032] Figure 4 It is a schematic diagram of the cross-sectional structure of the sputtering cathode and substrate of Example 1 of the present application.

[0033] Figure 5 It is a schematic diagram of the magnetic field simulation results of a single-layer circular magnet.

[0034] Figure 6 It is a schematic diagram of the magnetic field simulation results of the first magnetic ring and the second magnetic ring in Example 1 of the present application.

[0035] Figure 7 It is a schematic diagram of the overall structure of the sputtering cathode of Example 2 of the present application.

[0036] Figure 8 It is a schematic diagram of the internal structure of the sputtering cathode of Example 2 of the present application.

[0037] Fig. 9 It is a schematic diagram of the cross-sectional structure of the sputtering cathode of Example 2 of the present application.

[0038] Fig.10This is a schematic diagram of the magnetic field simulation results of a single-layer square ring magnet.

[0039] Fig.11 It is a schematic diagram of the magnetic field simulation results of the first magnetic ring and the second magnetic ring in Example 1 of the present application.

[0040] In the figure, 1. outer shell; 11. mounting plate; 111. first tube; 112. second tube; 113. third tube; 114. fourth tube; 12. first mounting ring; 13. second mounting ring; 14. closing ring; 15. closing plate; 2. first magnetic ring; 3. second magnetic ring; 4. first target ring; 5. second target ring; 6. first cooling water channel; 7. second cooling water channel; 8. third cooling water channel; 9. first connecting channel; 10. second connecting channel; 20. substrate. DETAILED DESCRIPTION

[0041] The following is combined with Figure 1 -Attached Fig.11 , further details of this application are given.

[0042] Example 1: A low-damage sputtering cathode, referring to Figure 1 and Figure 2 , including a shell 1, the shell 1 is in a ring shape, and a mounting plate 11 is provided at one axial end of the shell 1, the mounting plate 11 is coaxially connected to the shell 1, and the mounting plate 11 closes the shell 1, and the mounting plate 11 and the closed shell 1 are integrally formed.

[0043] Reference Figure 2 and Figure 3 A first mounting ring 12 and a second mounting ring 13 are arranged in the housing 1. The housing 1, the first mounting ring 12 and the second mounting ring 13 are all coaxially arranged. The first mounting ring 12 and the second mounting ring 13 are both located in the housing 1. The second mounting ring 13 is sleeved on the outside of the first mounting ring 12. The inner side wall of the second mounting ring 13 is spaced from the outer side wall of the first mounting ring 12. The second mounting ring 13 and the first mounting ring 12 are both fixedly connected to the mounting plate 11.

[0044] Reference Figure 2 and Figure 3 The housing 1 is also provided with a first magnetic ring 2, which is sleeved on the outside of the first mounting ring 12, and the inner wall of the first magnetic ring 2 is connected to the outer wall of the first mounting ring 12, and one axial end of the first magnetic ring 2 is in contact with the mounting plate 11. The first mounting ring 12 is provided to achieve the installation of the first magnetic ring 2.

[0045] Reference Figure 2 and Figure 3A second magnetic ring 3 is also disposed in the housing 1. The second magnetic ring 3 is inserted in the second mounting ring 13. The second magnetic ring 3 is coaxially disposed with the second mounting ring 13. The outer wall of the second magnetic ring 3 is connected to the inner wall of the second mounting ring 13. One axial end of the second magnetic ring 3 abuts against the mounting plate 11. The second mounting ring 13 is disposed to achieve the installation of the second magnetic ring 3.

[0046] Reference Figure 2 and Figure 3 , the first magnetic ring 2 and the second magnetic ring 3 are coaxially arranged, and the outer wall of the first magnetic ring 2 is spaced from the inner wall of the second magnetic ring 3. The first magnetic ring 2 and the second magnetic ring 3 are both magnetized along their own radial direction, which makes the inner magnetic pole of the first magnetic ring 2 opposite to the outer magnetic pole of the first magnetic ring 2, and the outer magnetic pole of the first magnetic ring 2 is opposite to the inner magnetic pole of the second magnetic ring 3. Specifically, in this embodiment, the inner magnetic pole of the first magnetic ring 2 is the N pole, and the outer magnetic pole of the first magnetic ring 2 is the S pole; the inner magnetic pole of the second magnetic ring 3 is the N pole, and the outer magnetic pole of the second magnetic ring 3 is the S pole.

[0047] By arranging the first magnetic ring 2 and the second magnetic ring 3, an inner and outer double-layer annular magnet is formed in the housing 1, so that a stable magnetic field can be formed between the first magnetic ring 2 and the second magnetic ring 3, and such a magnetic pole arrangement makes the magnetic field between the first magnetic ring 2 and the second magnetic ring 3 evenly distributed.

[0048] Reference Figure 2 and Figure 3 , a first target ring 4 and a second target ring 5 are also arranged in the housing 1, the first magnetic ring 2, the second magnetic ring 3, the first target ring 4, the second target ring 5, and the housing 1 are all coaxially arranged, and the first target ring 4 and the second target ring 5 are coaxially arranged between the first magnetic ring 2 and the second magnetic ring 3. The first target ring 4 is sleeved on the outside of the first magnetic ring 2, the second target ring 5 is sleeved on the outside of the first target ring 4, and the inner side wall of the second target ring 5 is spaced from the outer side wall of the first target ring 4. One axial end of the first target ring 4 and the second target ring 5 are both connected to the mounting plate 11.

[0049] Since the first target ring 4 and the second target ring 5 form a double-layer annular target, the target surface area is increased relative to the plane target. At the same time, the first target ring 4 and the second target ring 5 are located in a uniform magnetic field between the first magnetic ring 2 and the second magnetic ring 3, which can improve the utilization rate of the target material. In addition, since a stable magnetic field is formed between the first magnetic ring 2 and the second magnetic ring 3, a stable annular plasma region can be formed between the first target ring 4 and the second target ring 5. When the sputtered particles collide with the plasma region, the kinetic energy of the sputtered particles is weakened.

[0050] Based on the above principles, refer to Figure 2 and Figure 4When sputtering coating is performed, a substrate 20 is arranged at intervals on one axial side of the housing 1. The substrate 20 is located on the side of the housing 1 away from the mounting plate 11, and the axis of the housing 1 is arranged perpendicular to the substrate 20. At this time, the particles sputtered from the surface of the first target ring 4 and the second target ring 5 in the sputtering cathode enter the space between the first target ring 4 and the second target ring 5, and sputter toward the substrate 20 to achieve sputtering coating. However, due to the arrangement of the first magnetic ring 2 and the second magnetic ring 3, an annular plasma region is formed between the first target ring 4 and the second target ring 5. When the sputtered particles pass through the annular plasma region, the kinetic energy of the sputtered particles is weakened, and the sputtered particles with reduced kinetic energy will sputter toward the substrate 20. Since the kinetic energy of the particles is weakened, this can achieve the purpose of reducing the damage to the substrate 20.

[0051] Reference Figure 2 and Figure 3 The outer wall of the second mounting ring 13 is spaced apart from the inner wall of the housing 1, so that a first cooling water channel 6 can be formed between the second mounting ring 13 and the housing 1. The inner wall of the second magnetic ring 3 is spaced apart from the outer wall of the second target ring 5, so that a second cooling water channel 7 can be formed between the second magnetic ring 3 and the second target ring 5.

[0052] Reference Figure 2 A closed ring 14 is provided between the housing 1 and the second target ring 5. The closed ring 14 is coaxially arranged with the housing 1. The closed ring 14 is located on the side of the housing 1 away from the mounting plate 11. The housing 1 and the second target ring 5 are both connected to the closed ring 14. The second mounting ring 13 and the second magnetic ring 3 are spaced from the closed ring 14 on one side thereof facing the closed ring 14. A first communication channel 9 is formed between the closed ring 14 and the second mounting ring 13 and the second magnetic ring 3. The first communication channel 9 is connected to the first cooling water channel 6 and the second cooling water channel 7.

[0053] Reference Figure 2 A first tube 111 and a second tube 112 are provided on the mounting plate 11. One axial end of the first tube 111 and the second tube 112 are connected to the mounting plate 11, and the first tube 111 is connected to the first cooling water channel 6, and the second tube 112 is connected to the second cooling water channel 7.

[0054] Since the first connecting channel 9 connects the first cooling water channel 6 and the second cooling water channel 7, cooling water can be injected into the first cooling water channel 6 through the first pipe 111, and then the cooling water can flow from the first cooling water channel 6 into the second cooling water channel 7, and then the cooling water in the second cooling water channel 7 can be discharged through the second pipe 112. This can achieve the cooling of the housing 1, the second magnetic ring 3 and the second target ring 5, and thus can increase the service life of the sputtering cathode.

[0055] Reference Figure 2 and Figure 3The inner wall of the first target ring 4 is spaced apart from the outer wall of the first magnetic ring 2 , so that a third cooling water channel 8 can be formed between the first target ring 4 and the first magnetic ring 2 .

[0056] Reference Figure 2 A closing plate 15 is provided on the side of the first target ring 4 away from the mounting plate 11 along its own axial direction. The closing plate 15 is connected to the first target ring 4 and closes the first target ring 4. The first mounting ring 12 and the first magnetic ring 2 are both spaced apart from the closing plate 15 on one side facing the closing plate 15. A second communicating channel 10 is formed between the closing plate 15 and the first mounting ring 12 and the second magnetic ring 3. The second communicating channel 10 is connected to the third cooling water channel 8 and the internal space of the first mounting ring 12.

[0057] Reference Figure 2 A third tube 113 and a fourth tube 114 are provided on the mounting plate 11. One axial end of the third tube 113 and the fourth tube 114 are connected to the mounting plate 11, and the third tube 113 is connected to the third cooling water channel 8. The fourth tube 114 is coaxially arranged with the first mounting ring 12, and one end of the fourth tube 114 is connected to the internal space of the first mounting ring 12.

[0058] Since the second connecting flow channel 10 connects the third cooling water flow channel 8 and the internal space of the first mounting ring 12, cooling water can be injected into the third cooling water flow channel 8 through the third pipe 113, and then the cooling water can flow from the third cooling water flow channel 8 into the internal space of the first mounting ring 12, and then the cooling water in the internal space of the first mounting ring 12 can be discharged through the fourth pipe 114. This can achieve the cooling of the first magnetic ring 2 and the first target ring 4, and thus can increase the service life of the sputtering cathode.

[0059] Reference Figure 2 The sputtering cathode also includes a DC power supply, the first target ring 4 and the second target ring 5 are both electrically connected to the negative pole of the DC power supply, and the housing 1 is electrically connected to the positive pole of the DC power supply. In this embodiment, the first target ring 4 and the second target ring 5 are both made of metal materials, the housing 1 is also made of metal materials, and the first target ring 4 and the second target ring 5 are both insulated from the housing 1.

[0060] By setting a DC power supply, an electric field is formed between the first target ring 4 and the housing 1 and between the second target ring 5 and the housing 1, and the existence of the electric field makes it easier for electrons to be pulled out from the target surface, increasing the sputtering yield, that is, the number of atoms or molecules sputtered from the target surface per unit time, which helps to improve the sputtering efficiency and coating rate. At the same time, the coordination of the electric field and the magnetic field optimizes the distribution of the electric field and the magnetic field to achieve effective control of the kinetic energy of the sputtered particles, thereby reducing the damage of the sputtered particles to the substrate 20, improving the coating quality, and extending the service life of the cathode.

[0061] Reference Figure 2 When the first target ring 4 and the second target ring 5 are made of non-metallic materials, the first target ring 4 and the second target ring 5 both include a backing layer and a target layer, the backing layer is annular, the target layer is attached to the inner wall or outer wall of the backing layer, the backing layer is made of copper or titanium metal, and the binding material is indium. Then the negative electrode of the DC power supply is electrically connected to the backing layer.

[0062] Reference Figure 5 and Figure 6 The figure has a horizontal coordinate axis and a vertical coordinate axis. The horizontal coordinate axis and the vertical coordinate axis are used to represent different positions in space. The horizontal coordinate axis marks the horizontal distance range of -200mm to 200mm, and the vertical coordinate axis marks the vertical distance range of -200mm to 200mm. The figure also has a color axis, which represents the magnetic flux density range in Tesla (T). The color gradient from blue to purple represents the change of magnetic flux density, and the depth of the color reflects the size of the magnetic flux density. Therefore, the distribution of the magnetic field can be intuitively seen through the simulation schematic diagram.

[0063] contrast Figure 5 and Figure 6 In the simulation diagram of the double-circular ring magnet of the present application, the colors are evenly distributed everywhere, the difference in depth is small, and the color gradient range is small. Therefore, the magnetic field distribution in the sputtering cathode of the present application is more even.

[0064] The implementation principle of the embodiment of the present application is: a stable magnetic field is formed between the first magnetic ring 2 and the second magnetic ring 3 by the coordinated setting of the first magnetic ring 2 and the second magnetic ring 3. The coordinated setting of the first target ring 4 and the second target ring 5, and the first target ring 4 and the second target ring 5 are both located in the magnetic field between the first magnetic ring 2 and the second magnetic ring 3, which can improve the utilization rate of the target material. At the same time, an electric field is established between the first target ring 4 and the outer shell 1, and between the second target ring 5 and the outer shell 1. Through the coordinated setting of the electric field and the magnetic field, an annular plasma region can be finally formed between the first target ring 4 and the second target ring 5. During the sputtering coating process, when the sputtered particles move to the annular plasma region, the kinetic energy of the particles is reduced, and then when the particles are sputtered to the substrate 20, the damage to the substrate 20 can be reduced.

[0065] This embodiment also discloses a sputtering coating method, comprising the following steps: The first step is to assemble the sputtering coating equipment.

[0066] The second step is to start the vacuum pump to evacuate the sputtering chamber of the sputtering coating equipment. Preferably, the vacuum value of the sputtering chamber is less than 1×10 4 Pa.

[0067] The third step is to introduce working gas into the sputtering chamber of the sputtering coating equipment. Preferably, the working gas is argon, the reaction gas is oxygen or other reaction gas, and the working gas pressure in the sputtering chamber is maintained at 0.3-0.5Pa.

[0068] The fourth step is to start the sputtering coating setting, set the power parameters according to actual needs, ignite the sputtering cathode, and start the sputtering coating process until the sputtering coating is completed.

[0069] The implementation principle of the embodiment of the present application is: by using the above-mentioned sputtering cathode to perform sputtering coating processing, it is possible to coat the surface of the substrate 20 and reduce damage to the substrate 20.

[0070] Example 2: A low-damage sputtering cathode, referring to Figure 7 and Figure 8 The difference between this embodiment and embodiment 1 is that the first mounting ring 12, the first magnetic ring 2, the first target ring 4, the second target ring 5, the second magnetic ring 3, the second mounting ring 13 and the housing 1 are all in a square ring shape.

[0071] Reference Figure 8 and Fig. 9 , a plurality of first tubes 111, second tubes 112 and third tubes 113 are provided, a plurality of first tubes 111 are connected to the first cooling water channel 6, a plurality of second tubes 112 are connected to the second cooling water channel 7, and a plurality of third tubes 113 are connected to the third cooling water channel 8. This can optimize the cooling water flow in the sputtering cathode and improve the heat dissipation effect.

[0072] contrast Fig.10 and Fig.11 In the simulation diagram of the two-sided ring magnet of the present application, the color distribution is uniform, the difference in depth is small, and the color gradient range is small. Therefore, the magnetic field distribution in each part of the sputtering cathode of the present application is more uniform.

[0073] The implementation principle of the embodiment of the present application is: since the sputtering cathode can be set to a square shape, this can increase the selectivity of the shape of the sputtering cathode.

[0074] The embodiments of this specific implementation are all preferred embodiments of the present application, and are not intended to limit the protection scope of the present application. The same components are represented by the same figure marks. Therefore, any equivalent changes made based on the structure, shape, and principle of the present application should be included in the protection scope of the present application.

Claims

1. A low-damage sputtering cathode, characterized in that: The invention comprises a shell (1), a first magnetic ring (2), a first target material ring (4), a second magnetic ring (3) and a second target material ring (5); the shell (1) is ring-shaped, and a mounting plate (11) for closing the shell (1) is provided at one end of the shell (1); the first magnetic ring (2), the first target material ring (4), the second magnetic ring (3) and the second target material ring (5) are all located inside the shell (1), and the first magnetic ring (2), the first target material ring (4), the second magnetic ring (3) and the second target material ring (5) are all connected to the mounting plate (11); The first magnetic ring (2), the first target ring (4), the second magnetic ring (3) and the second target ring (5) are all coaxially arranged; the first target ring (4) is sleeved on the outside of the first magnetic ring (2); the second target ring (5) is sleeved on the outside of the first target ring (4); the second magnetic ring (3) is sleeved on the outside of the second target ring (5); and the inner wall of the second target ring (5) is spaced from the outer wall of the first target ring (4).

2. A low-damage sputtering cathode according to claim 1, characterized in that: The magnetic poles of the outer side of the first magnetic ring (2) and the inner side of the second magnetic ring (3) are opposite.

3. A low-damage sputtering cathode according to claim 1, characterized in that: It also includes a DC power supply, the first target ring (4) and the second target ring (5) are both electrically connected to the negative pole of the DC power supply, the housing (1) is electrically connected to the positive pole of the linear power supply, and the first target ring (4) and the second target ring (5) are both insulated from the housing (1).

4. A low-damage sputtering cathode according to claim 1, characterized in that: The outer wall of the second magnetic ring (3) is spaced apart from the inner wall of the housing (1) and forms a first cooling water channel (6); a first tube (111) is provided on the mounting plate (11), and the first tube (111) is connected to the first cooling water channel (6).

5. A low-damage sputtering cathode according to claim 4, characterized in that: The inner wall of the second magnetic ring (3) and the outer wall of the second target ring (5) are spaced apart and form a second cooling water channel (7); a second tube (112) is provided on the mounting plate (11); the second tube (112) is connected to the second cooling water channel (7).

6. A low-damage sputtering cathode according to claim 5, characterized in that: The first cooling water flow channel (6) is connected to the second cooling water flow channel (7).

7. A low-damage sputtering cathode according to claim 1, characterized in that: The inner wall of the first target ring (4) is spaced apart from the outer wall of the first magnetic ring (2) and forms a third cooling water channel (8); a third tube (113) is provided on the mounting plate (11), and the third tube (113) is connected to the third cooling water channel (8).

8. A low-damage sputtering cathode according to claim 7, characterized in that: A fourth tube (114) is provided on the mounting plate (11), the fourth tube (114) being connected to the internal space of the first magnetic ring (2), and the internal space of the first magnetic ring (2) being connected to the third cooling water channel (8).

9. A sputtering coating method, using a low-damage sputtering cathode as claimed in any one of claims 1 to 8 for sputtering coating, characterized in that: The following steps are involved: Sputtering coating equipment assembly; Turn on the vacuum pump to evacuate the sputtering chamber of the sputtering coating equipment; Introducing working gas into a sputtering chamber of a sputtering coating device; Start the sputtering coating setting, set the power parameters according to actual needs, ignite the sputtering cathode, start the sputtering coating process, and complete the sputtering coating.

Images