Photoresist cleaning agent as well as preparation method and application thereof

Abstract

The invention discloses a photoresist cleaning agent as well as a preparation method and application thereof. The photoresist cleaning agent comprises the following components: alkali, an organic solvent, a corrosion inhibitor and a surfactant, the corrosion inhibitor comprises polyol and an azole corrosion inhibitor; the mass ratio of the polyol to the azole corrosion inhibitor is (2-4): 1. The photoresist cleaning agent provided by the invention has multiple functions of stripping, dispersing, wetting, emulsifying, cleaning, wax removing, grease removing and the like, can also play a role in adsorbing and dispersing particles, can effectively remove organic matters such as photoresist, grease, paraffin and the like on the surface of a semiconductor wafer, has excellent protection performance on a metal circuit and a semiconductor substrate, and can be widely applied to the field of semiconductor devices. Chemical bonds can be formed on metal and non-metal base materials, and the metal and non-metal base materials are prevented from being corroded by the stripping agent.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor production, and in particular relates to a photoresist cleaning agent and a preparation method and application thereof. Background Art

[0002] With the development of integrated circuit technology, aluminum-tungsten metal connection and copper interconnection Damascus process have appeared successively, especially the emergence of hard mask copper interconnection Damascus process, which has posed a great challenge to the photoresist removal process. Photolithography is a conventional process used in the manufacture of integrated circuits, liquid crystal displays and chips, and photoresist is a material that must be used in the photolithography process. Photoresist, also known as photoresist, is a light-sensitive mixed liquid composed of three main components: photosensitive resin, sensitizer and solvent. It is widely used in the manufacture of printed circuits and integrated circuits, as well as printing plate making processes.

[0003] In semiconductor integrated circuits, photoresist is applied to the surface of metal materials, exposed, developed, and etched to form circuits, and then the photoresist is stripped from the substrate, or after the circuit is formed, plasma etching is performed on the pattern to transfer the pattern. These photoresists need to be completely removed before the next stage of the process.

[0004] Currently in the semiconductor industry, stripping photoresist and its residues requires dry ashing to remove most of the photoresist layer, and then using photoresist stripping liquid to remove the remaining photoresist layer. Many photoresist stripping liquids currently on the market have the following disadvantages: high cost and insufficient cleaning ability for negative photoresist; high corrosion to semiconductor wafer patterns and substrates; weak corrosion inhibition of metal circuits; unstable raw materials, with the risk of decomposition and explosion. Summary of the invention

[0005] The present invention aims to solve at least one of the technical problems existing in the above-mentioned prior art. To this end, the present invention provides a photoresist cleaning agent, which is environmentally friendly, low in cost, does not corrode chip substrates and can completely remove residual photoresist.

[0006] The invention also provides a method for preparing the photoresist cleaning agent.

[0007] The present invention also proposes the above application.

[0008] The invention also provides a photoresist cleaning method.

[0009] According to a first aspect of the present invention, a photoresist cleaning agent is provided, the photoresist cleaning agent comprising the following components: an alkali, an organic solvent, a corrosion inhibitor and a surfactant;

[0010] The corrosion inhibitors include polyols and azole corrosion inhibitors;

[0011] The mass ratio of the polyol to the azole corrosion inhibitor is (2-4):1.

[0012] In some embodiments of the present invention, the photoresist cleaning agent includes the following components in parts by mass: 4 to 10 parts of alkali, 50 to 110 parts of organic solvent, 0.5 to 4 parts of corrosion inhibitor and 0.5 to 2 parts of surfactant and 8 to 15 parts of water.

[0013] In some embodiments of the present invention, the photoresist cleaning agent includes the following components in parts by mass: 6 to 8 parts of alkali, 70 to 90 parts of organic solvent, 1 to 3 parts of corrosion inhibitor and 0.5 to 1.5 parts of surfactant and 8 to 12 parts of water.

[0014] In some embodiments of the present invention, the photoresist cleaning agent includes the following components in parts by mass: 7 parts of alkali, 80 parts of organic solvent, 2 parts of corrosion inhibitor, 1 part of surfactant and 10 parts of water.

[0015] In some embodiments of the present invention, the base comprises an inorganic base and / or an organic base.

[0016] In some embodiments of the present invention, the organic base includes at least one of monoethanolamine, diethanolamine, triethanolamine, 2-(2-aminoethoxy)ethanol, N,N-dimethylethanolamine, N,N-diethylethanolamine, N,N-dibutylethanolamine, N-methylethanolamine, N-ethylethanolamine, N-butylethanolamine, N-methyldiethanolamine, monoisopropanolamine, diisopropanolamine and triisopropanolamine.

[0017] In some embodiments of the present invention, the inorganic base comprises sodium hydroxide and / or potassium hydroxide.

[0018] In the photoresist cleaning agent provided by the present invention, the role of the alkali is to provide an alkaline environment and stabilize the pH value at 10.0-12.0; the alkaline environment is conducive to the removal of photoresist and grease, and reduces the adsorption of particles on the surface of the wafer.

[0019] In some embodiments of the present invention, the organic solvent includes an amide organic solvent and / or an alcohol ether organic solvent.

[0020] In some embodiments of the present invention, the amide organic solvent includes at least one of alkyl-pyrrolidone, 1-hydroxyalkyl-2-pyrrolidone, dimethylformamide, dimethylacetamide and N,N-dimethylethanolamine.

[0021] Amide organic solvents have a high boiling point, are not easily volatile, are easily soluble in water, have a strong dissolving power for resins, and are cheap. They can effectively swell and soften the photoresist, and react and dissolve the photoresist with the cooperation of organic bases. The photoresist will not re-adhere after rinsing with pure water.

[0022] In some embodiments of the present invention, the alcohol ether organic solvent includes at least one of diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether and dipropylene glycol monobutyl ether.

[0023] Alcohol ether organic solvents have a high boiling point, are not easily volatile, are miscible with water, and can effectively increase the solubility of organic bases and corrosion inhibitors, enhance the ability to dissolve photoresists, and reduce residual glue; and the cost of alcohol ether solvents is also very low.

[0024] In some embodiments of the present invention, the mass ratio of the amide organic solvent to the alcohol ether organic solvent is (2-4):1.

[0025] In some embodiments of the present invention, the mass ratio of the amide organic solvent to the alcohol ether organic solvent is 3:1.

[0026] In some embodiments of the present invention, the polyol includes at least one of sorbitol, polyvinyl alcohol, xylitol, arabinose, glucose, galactose, fructose, sucrose, maltose, lactose, ribose, ribulose, xylulose, mannose, altrose, idose, talose, threitol, erythritol, ribitol, arabitol, talitol, sorbitol, mannitol, iditol and galactitol.

[0027] In some embodiments of the present invention, the azole corrosion inhibitor includes at least one of benzotriazole, mercaptobenzothiazole, methylbenzotriazole, benzotriazole diethanolamine salt, 2-mercaptobenzimidazole, 2-mercaptobenzothiazole, 2-mercaptobenzoxazole, dithiothiadiazole, 3-amino-1,2,4-triazole, 4-amino-1,2,4-triazole, 3-amino-5-mercapto-1,2,4-triazole, 3,5-diamino-1,2,4-triazole, 4-amino-5-mercapto-1,2,4-triazole, 5-amino-tetrazolyl and 1-phenyl-5-mercaptotetrazolyl.

[0028] The role of corrosion inhibitors is to inhibit corrosion of semiconductor substrates and metal circuits. The combined use of polyols and azole corrosion inhibitors can produce a synergistic effect, forming chemical bonds on metal and non-metal substrates to produce a protective film, thereby preventing the metal substrate from being corroded by the stripper. At the same time, azole corrosion inhibitors also have the function of absorbing ultraviolet light, which has a bactericidal effect and can reduce the growth of bacteria in photoresist cleaning agents, thereby preventing microorganisms from adhering to the surface of the cleaned metal substrate and affecting the subsequent photolithography process.

[0029] In some embodiments of the present invention, the surfactant includes at least one of sulfated castor oil, sodium alkyl sulfonate, sodium alkylbenzene sulfonate, sodium alkyl sulfate, sodium secondary alkyl sulfonate, sodium secondary alkyl sulfate, sodium α-olefin sulfonate, sodium alkylnaphthalene sulfonate, sodium alkyl succinate sulfonate, panacitrin T, sodium aminosulfonate, alkylphenol polyoxyethylene ether, perfluoroalkylethanol polyoxyethylene ether, fatty alcohol polyoxyethylene ether, sodium dioctyl sulfosuccinate, polyether and phosphate compounds.

[0030] Surfactants have the functions of penetration, wetting, emulsification, solubilization, and reducing the binding force between impurities and substrates. They have strong penetration into photoresists, can enhance the penetration of organic solvents and alkaline compounds in photoresists, can wet the surface of photoresists, promote dissolution and penetration of organic base molecules into the film, facilitate post-stripping cleaning, and reduce the adhesion of photoresists and particulate matter.

[0031] In some embodiments of the present invention, the water includes pure water, ultrapure water or deionized water.

[0032] In some embodiments of the present invention, the photoresist cleaning agent further comprises at least one of a fragrance, a chelating agent and an antimicrobial component.

[0033] According to the second aspect of the present invention, a method for preparing the photoresist cleaning agent as described in the first aspect of the present invention is provided, and the preparation method comprises the following steps: adding each component into a reaction container, mixing evenly and filtering.

[0034] In some embodiments of the present invention, the preparation method includes the step of transferring the components into the reaction container using a pneumatic diaphragm pump.

[0035] In some embodiments of the present invention, the reaction vessel comprises a reaction kettle.

[0036] In some embodiments of the present invention, the uniform mixing comprises a timed cyclic stirring method.

[0037] In some embodiments of the present invention, the stirring speed is 40-80 rpm.

[0038] In some embodiments of the present invention, the stirring time is 20 to 40 minutes.

[0039] In some embodiments of the present invention, the filtering comprises filtering using a precision filter.

[0040] In some embodiments of the present invention, the filtration uses a pore size of 0.3 to 0.7 μm.

[0041] According to a third aspect of the present invention, a use of the photoresist cleaning agent as described in the first aspect of the present invention in cleaning photoresist residues on the surface of a metal substrate is proposed.

[0042] According to a fourth aspect of the present invention, a photoresist cleaning method is provided, the photoresist cleaning method comprising the following steps:

[0043] The metal substrate to be cleaned is immersed in the photoresist cleaning agent as described in the first aspect of the present invention, and immersed at 65-85° C. for 20-40 minutes to remove the photoresist residue on the surface of the metal substrate.

[0044] In some embodiments of the present invention, the soaking temperature is 70-80°C.

[0045] In some embodiments of the present invention, the soaking time is 30 minutes.

[0046] In some embodiments of the present invention, the photoresist cleaning method further comprises the steps of cleaning with water and drying with high-purity nitrogen after immersion.

[0047] The present invention has at least the following beneficial effects:

[0048] The photoresist cleaning agent provided by the present invention has multiple functions such as stripping, dispersing, wetting, emulsifying, cleaning, wax removal, and grease removal. It can also adsorb and disperse particles, effectively remove organic matter such as photoresist, grease, and paraffin on the surface of semiconductor wafers, and has excellent protective performance for metal circuits and semiconductor substrates. It can form chemical bonds on metal and non-metal substrates to prevent metal and non-metal substrates from being corroded by the stripping agent.

[0049] The preparation method of the photoresist cleaning agent provided by the invention does not require expensive equipment and complicated process control, has simple and mild reaction conditions, easily available raw materials, low production cost, and is suitable for industrial production. DETAILED DESCRIPTION

[0050] The following will be combined with the embodiments to clearly and completely describe the concept of the present invention and the technical effects produced, so as to fully understand the purpose, characteristics and effects of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, other embodiments obtained by those skilled in the art without creative work are all within the scope of protection of the present invention.

[0051] Example 1

[0052] This embodiment prepares a photoresist cleaning agent, which includes the following raw material components in percentage by mass:

[0053] 7% monoethanolamine, 60% N,N-dimethylacetamide, 20% diethylene glycol butyl ether, 2% corrosion inhibitor, 1% sodium dioctyl sulfosuccinate, and 10% deionized water;

[0054] The corrosion inhibitor is obtained by mixing sorbitol and mercaptobenzothiazole in a mass ratio of 3:1, that is, the mass percentage of sorbitol in the photoresist cleaning agent is 1.5%, and the mass percentage of mercaptobenzothiazole in the photoresist cleaning agent is 0.5%.

[0055] The preparation method of the photoresist cleaning agent comprises the following steps:

[0056] Weigh each raw material component of the above formula separately, use a pneumatic diaphragm pump to transfer all the raw material components to the reactor, and mix the raw material components evenly through timed cyclic stirring at a speed of 60 rpm and a stirring time of 30 min. Finally, filter with a precision filter with a pore size of 0.5 μm to obtain the photoresist cleaning agent.

[0057] Example 2

[0058] In this embodiment, a photoresist cleaning agent is prepared. The raw material ratio of the photoresist cleaning agent is different from that of the photoresist cleaning agent provided in Example 1 only in that sodium dioctyl sulfosuccinate is replaced with an equal mass of fatty alcohol polyoxyethylene ether, and the ratios of other components are the same as those in Example 1, and the preparation method is also consistent with that in Example 1.

[0059] Example 3

[0060] This embodiment provides a photoresist cleaning method, which specifically includes the following steps:

[0061] The metal substrate to be cleaned is immersed in the photoresist cleaning agent provided in Example 1, immersed at 75° C. for 30 minutes, and then rinsed with deionized water to remove the photoresist residue on the surface of the metal substrate.

[0062] Comparative Example 1

[0063] In this comparative example, a photoresist cleaning agent is prepared. The raw material ratio of the photoresist cleaning agent is different from that of the photoresist cleaning agent provided in Example 1 only in that the corrosion inhibitor is replaced by sorbitol, and the mass percentage of the corrosion inhibitor in the photoresist cleaning agent is still 2%. The ratios of other components are the same as those in Example 1, and the preparation method is also consistent with that in Example 1.

[0064] Comparative Example 2

[0065] In this comparative example, a photoresist cleaning agent is prepared. The raw material ratio of the photoresist cleaning agent is different from that of the photoresist cleaning agent provided in Example 2 only in that the corrosion inhibitor is replaced by mercaptobenzothiazole, and the mass percentage of the corrosion inhibitor in the photoresist cleaning agent is still 2%. The ratios of other components are the same as those in Example 2, and the preparation method is also consistent with that in Example 2.

[0066] Comparative Example 3

[0067] In this comparative example, a photoresist cleaning agent is prepared. The raw material ratio of the photoresist cleaning agent is different from that of the photoresist cleaning agent provided in Example 2 only in that the mixing mass ratio of sorbitol and mercaptobenzothiazole in the corrosion inhibitor is adjusted to 1:1, and the ratios of other components are the same as those in Example 2, and the preparation method is also consistent with that in Example 2.

[0068] Comparative Example 4

[0069] In this comparative example, a photoresist cleaning agent is prepared. The raw material ratio of the photoresist cleaning agent is different from that of the photoresist cleaning agent provided in Example 1 only in that the mixing mass ratio of sorbitol and mercaptobenzothiazole in the corrosion inhibitor is adjusted to 2:1, and the ratios of other components are the same as those in Example 1, and the preparation method is also consistent with that in Example 1.

[0070] Comparative Example 5

[0071] In this comparative example, a photoresist cleaning agent is prepared. The raw material ratio of the photoresist cleaning agent is different from that of the photoresist cleaning agent provided in Example 2 only in that the mixing mass ratio of sorbitol and mercaptobenzothiazole in the corrosion inhibitor is adjusted to 4:1, and the ratios of other components are the same as those in Example 2, and the preparation method is also consistent with that in Example 2.

[0072] Comparative Example 6

[0073] In this comparative example, a photoresist cleaning agent is prepared. The raw material ratio of the photoresist cleaning agent is different from that of the photoresist cleaning agent provided in Example 1 only in that the mixing mass ratio of sorbitol and mercaptobenzothiazole in the corrosion inhibitor is adjusted to 5:1, and the ratios of other components are the same as those in Example 1, and the preparation method is also consistent with that in Example 1.

[0074] Comparative Example 7

[0075] In this comparative example, a photoresist cleaning agent is prepared. The raw material ratio of the photoresist cleaning agent is different from that of the photoresist cleaning agent provided in Example 1 only in that sodium dioctyl sulfosuccinate is replaced with an equal mass of OP-10, and the ratios of other components are the same as those in Example 1, and the preparation method is also consistent with that in Example 1.

[0076] Comparative Example 8

[0077] In this comparative example, a photoresist cleaning agent is prepared. The raw material ratio of the photoresist cleaning agent is different from that of the photoresist cleaning agent provided in Example 1 only in that sodium dioctyl sulfosuccinate is replaced with an equal mass of sodium alkylbenzene sulfonate, and the ratios of other components are the same as those in Example 1, and the preparation method is also consistent with that in Example 1.

[0078] Comparative Example 9

[0079] In this comparative example, a photoresist cleaning agent is prepared. The raw material ratio of the photoresist cleaning agent is different from that of the photoresist cleaning agent provided in Example 1 only in that sodium dioctyl sulfosuccinate is replaced with an equal mass of sodium alkyl sulfate, and the ratios of other components are the same as those in Example 1, and the preparation method is also consistent with that in Example 1.

[0080] Comparative Example 10

[0081] In this comparative example, a photoresist cleaning agent is prepared. The raw material ratio of the photoresist cleaning agent is different from that of the photoresist cleaning agent provided in Example 1 only in that sodium dioctyl sulfosuccinate is replaced with an equal mass of sodium secondary alkyl sulfonate, and the ratios of other components are the same as those in Example 1, and the preparation method is also consistent with that in Example 1.

[0082] Comparative Example 11

[0083] In this comparative example, a photoresist cleaning agent is prepared. The raw material ratio of the photoresist cleaning agent is different from that of the photoresist cleaning agent provided in Example 1 only in that sodium dioctyl sulfosuccinate is replaced with an equal mass of sodium aminosulfonate, and the ratios of other components are the same as those in Example 1, and the preparation method is also consistent with that in Example 1.

[0084] Comparative Example 12

[0085] In this comparative example, a photoresist cleaning agent is prepared. The raw material ratio of the photoresist cleaning agent is different from that of the photoresist cleaning agent provided in Example 1 only in that sodium dioctyl sulfosuccinate is replaced with an equal mass of perfluoroalkylethanol polyoxyethylene ether, and the ratios of other components are the same as those in Example 1, and the preparation method is also consistent with that in Example 1.

[0086] Comparative Example 13

[0087] In this comparative example, a photoresist cleaning agent is prepared. The raw material ratio of the photoresist cleaning agent is different from that of the photoresist cleaning agent provided in Example 1 only in that sodium dioctyl sulfosuccinate is replaced with an equal mass of deionized water, and the ratios of other components are the same as those in Example 1, and the preparation method is also consistent with that in Example 1.

[0088] Test example

[0089] This test example tests the cleaning performance of the photoresist cleaning agents prepared in Examples 1 to 2 and Comparative Examples 1 to 13, wherein the formulation information of the photoresist cleaning agents provided in Examples 1 to 2 and Comparative Examples 1 to 13 is shown in Table 1; the specific test methods and test results are as follows:

[0090] Table 1 Formulation information of Examples 1 to 2 and Comparative Examples 1 to 13

[0091]

[0092]

[0093] 1. Evaluate the effect of corrosion inhibitors on the corrosion resistance of photoresist cleaners:

[0094] The photoresist cleaning agents prepared in Examples 1 to 2 and Comparative Examples 1 to 6 were respectively poured into a 2L container, and then the semiconductor substrate covered with photoresist was cut into chips of size 3 cm×3 cm, and immersed in the photoresist cleaning agent, respectively, and soaked at a constant temperature of 75°C for 30 minutes, rinsed with deionized water, and then blown dry with high-purity nitrogen. The degumming effect was observed by optical microscope and naked eye; after the observation, it was placed in the photoresist cleaning agent again to extend the soaking time to 72 hours, rinsed with deionized water, and then blown dry with high-purity nitrogen. The samples were dried and the corrosion on the surface of the metal substrate was observed under an optical microscope. It was found that comparative examples 1 and 2 had slight corrosion, while examples 1 and 2 and comparative examples 3, 4, 5, and 6 had no corrosion. Examples 1 and 2 and comparative examples 3, 4, 5, and 6 were immersed at a constant temperature of 75° C. for a total of 96 hours, rinsed with deionized water, and dried with high-purity nitrogen. The corrosion on the surface of the metal substrate was observed under an optical microscope. It was found that examples 1 and 2 had no corrosion, while comparative examples 3, 4, 5, and 6 had slight corrosion. The results are shown in Table 2.

[0095] Table 2 Performance test results of photoresist cleaning agents provided by Examples 1 to 2 and Comparative Examples 1 to 6

[0096] Glue removal effect Corrosion degree Example 1 Complete removal 96 hours of no corrosion Example 2 Complete removal 96 hours of no corrosion Comparative Example 1 Complete removal Slight corrosion after 72 hours Comparative Example 2 Complete removal Slight corrosion after 72 hours Comparative Example 3 Complete removal 96 hours with slight corrosion Comparative Example 4 Complete removal 96 hours with slight corrosion Comparative Example 5 Complete removal 96 hours with slight corrosion Comparative Example 6 Complete removal 96 hours with slight corrosion

[0097] As shown in Table 2, the photoresist cleaning agents provided in Examples 1 to 2 of the present invention and Comparative Examples 1 to 6 have good photoresist removal effects and can completely remove the photoresist on the surface of the metal substrate.

[0098] However, in the detection of corrosion conditions, the photoresist cleaning agents provided by Examples 1 and 2 did not corrode the metal substrate after immersion at a constant temperature of 75°C for 96 hours, while Comparative Examples 1 and 2 had slight corrosion after immersion at a constant temperature of 75°C for 72 hours, and Comparative Examples 3, 4, 5, and 6 had slight corrosion after immersion at a constant temperature of 75°C for 96 hours, indicating that the mixed use of the corrosion inhibitors sorbitol and mercaptobenzothiazole can improve the corrosion resistance of the photoresist cleaning agent; and the mixing mass ratio of sorbitol and mercaptobenzothiazole in the corrosion inhibitors used in Comparative Examples 3 to 6 is different from that in Examples 1 to 2, and the anti-corrosion effect of the photoresist cleaning agents provided by Comparative Examples 3 to 6 is not as good as that of Examples 1 to 2, indicating that when the mass ratio of sorbitol and mercaptobenzothiazole is 3:1, the anti-corrosion effect brought by the corrosion inhibitor is optimal.

[0099] 2. Evaluate the effect of surfactants on photoresist removal by photoresist cleaners:

[0100] The photoresist cleaning agents prepared in Examples 1-2 and Comparative Examples 7-13 were poured into 2L containers respectively, and then the semiconductor substrate covered with photoresist was cut into chips of 3cm×3cm in size, and immersed in the photoresist cleaning agent respectively, with Examples 1-2 soaked at 75°C for 30min, Comparative Examples 7-12 soaked at 75°C for 40min, and Comparative Example 13 soaked at 75°C for 50min, taken out, rinsed with deionized water, and then dried with high-purity nitrogen. The removal of the photoresist and the corrosion of the metal were confirmed by optical microscope and naked eyes, and the results are shown in Table 3.

[0101] Table 3 Performance test results of photoresist cleaning agents provided by Examples 1 to 2 and Comparative Examples 7 to 12

[0102] Soaking time Removal Effect Corrosion degree Example 1 30min Complete removal No corrosion Example 2 30min Complete removal No corrosion Comparative Example 7 40min There is residual glue No corrosion Comparative Example 8 40min There is residual glue No corrosion Comparative Example 9 40min There is residual glue No corrosion Comparative Example 10 40min There is residual glue No corrosion Comparative Example 11 40min There is residual glue No corrosion Comparative Example 12 40min There is residual glue No corrosion Comparative Example 13 50min There is residual glue No corrosion

[0103] As can be seen from Table 3, when the chip is immersed in the photoresist cleaning agent provided by Examples 1 to 2 of the present invention at 75°C for 30 minutes, the photoresist can be completely removed, while the photoresist cleaning agent provided by Comparative Examples 7 to 12 has a worse degumming effect than Examples 1 to 2 when the chip is immersed in the photoresist cleaning agent at 75°C for 40 minutes, indicating that the surfactants fatty alcohol polyoxyethylene ether and sodium dioctyl sulfosuccinate can enhance the penetration of organic solvents and alkaline compounds in the photoresist, promote the degumming effect, and increase the degumming speed, and are more suitable for the preparation of photoresist cleaning agents than other surfactants; the photoresist cleaning agent provided by Comparative Example 13 does not contain any surfactant at all. Although the immersion time is the longest, the degumming effect is still worse than that of Examples 1 to 2, indicating that the addition of surfactants can greatly improve the degumming effect of the photoresist cleaning agent.

[0104] The embodiments of the present invention are described in detail above, but the present invention is not limited to the above embodiments. Various changes can be made within the knowledge of ordinary technicians in the relevant technical field without departing from the purpose of the present invention. In addition, the embodiments of the present invention and the features in the embodiments can be combined with each other without conflict.

Claims

1. A photoresist cleaning agent, characterized in that: The photoresist cleaning agent comprises the following components: alkali, organic solvent, corrosion inhibitor and surfactant; The corrosion inhibitors include polyols and azole corrosion inhibitors; The mass ratio of the polyol to the azole corrosion inhibitor is (2-4):

1.

2. The photoresist cleaning agent according to claim 1, characterized in that: The photoresist cleaning agent comprises the following components in parts by mass: 4 to 10 parts of alkali, 50 to 110 parts of organic solvent, 0.5 to 4 parts of corrosion inhibitor, 0.5 to 2 parts of surfactant and 8 to 15 parts of water.

3. The photoresist cleaning agent according to claim 1, characterized in that: The base includes an inorganic base and / or an organic base; Preferably, the organic base comprises at least one of monoethanolamine, diethanolamine, triethanolamine, 2-(2-aminoethoxy)ethanol, N,N-dimethylethanolamine, N,N-diethylethanolamine, N,N-dibutylethanolamine, N-methylethanolamine, N-ethylethanolamine, N-butylethanolamine, N-methyldiethanolamine, monoisopropanolamine, diisopropanolamine and triisopropanolamine.

4. The photoresist cleaning agent according to claim 1, characterized in that: The organic solvent includes an amide organic solvent and / or an alcohol ether organic solvent; Preferably, the amide organic solvent includes at least one of alkyl-pyrrolidone, 1-hydroxyalkyl-2-pyrrolidone, dimethylformamide, dimethylacetamide and N,N-dimethylethanolamine; Preferably, the alcohol ether organic solvent includes at least one of diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether and dipropylene glycol monobutyl ether; Preferably, the mass ratio of the amide organic solvent to the alcohol ether organic solvent is (2-4):

1.

5. The photoresist cleaning agent according to claim 1, characterized in that: The polyol includes at least one of sorbitol, polyvinyl alcohol, xylitol, arabinose, glucose, galactose, fructose, sucrose, maltose, lactose, ribose, ribulose, xylulose, mannose, altrose, idose, talose, threitol, erythritol, ribitol, arabitol, altrose, talitol, sorbitol, mannitol, iditol and galactitol.

6. The photoresist cleaning agent according to claim 1, characterized in that: The azole corrosion inhibitor includes at least one of benzotriazole, mercaptobenzothiazole, methylbenzotriazole, benzotriazole diethanolamine salt, 2-mercaptobenzimidazole, 2-mercaptobenzothiazole, 2-mercaptobenzoxazole, dimercaptothiadiazole, 3-amino-1,2,4-triazole, 4-amino-1,2,4-triazole, 3-amino-5-mercapto-1,2,4-triazole, 3,5-diamino-1,2,4-triazole, 4-amino-5-mercapto-1,2,4-triazole, 5-amino-tetrazolyl and 1-phenyl-5-mercaptotetrazolyl.

7. The photoresist cleaning agent according to claim 1, characterized in that: The surfactant comprises at least one of sulfated castor oil, sodium alkyl sulfonate, sodium alkylbenzene sulfonate, sodium alkyl sulfate, sodium secondary alkyl sulfonate, sodium secondary alkyl sulfate, sodium α-olefin sulfonate, sodium alkylnaphthalene sulfonate, sodium alkyl succinate sulfonate, panacitrin T, sodium aminosulfonate, alkylphenol polyoxyethylene ether, perfluoroalkylethanol polyoxyethylene ether, fatty alcohol polyoxyethylene ether, sodium dioctyl sulfosuccinate, polyether and phosphate compounds.

8. The method for preparing a photoresist cleaning agent according to any one of claims 1 to 7, characterized in that: The preparation method comprises the following steps: adding various components into a reaction container, mixing them uniformly and filtering them.

9. Use of the photoresist cleaning agent as claimed in any one of claims 1 to 7 in cleaning photoresist residues on the surface of a metal substrate.

10. A photoresist cleaning method, characterized in that: The photoresist cleaning method comprises the following steps: The metal substrate to be cleaned is immersed in the photoresist cleaning agent as described in any one of claims 1 to 7, and immersed at 65 to 85° C. for 20 to 40 minutes to remove the photoresist residue on the surface of the metal substrate.

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