Medium-power frequency hopping filter suitable for broadband of 200-700MHz

Abstract

The invention provides a medium-power frequency hopping filter suitable for a broadband of 200-700MHz. The medium-power frequency hopping filter comprises a radio frequency input port, a radio frequency output port, an input matching inductor module, an output matching inductor module, a resonant inductor and a PIN diode switched capacitor array, each resonant inductor is connected with the PIN diode switched capacitor array; each PIN diode switched capacitor array is formed by connecting N groups of PIN diode switched capacitor units in parallel; each group of PIN diode switched capacitor unit is formed by connecting a PIN diode and a resonant capacitor in series; and the total capacitance of each PIN diode switch capacitor array is limited, so that the working frequency of the frequency hopping filter can be greater than or equal to 700MHz when all the PIN diodes are cut off, and the working frequency of the frequency hopping filter can be less than or equal to 200MHz when all the PIN diodes are conducted. According to the frequency hopping filter, 200-700MHz full-band coverage can be met by a single device, the size of a frequency hopping filtering system is reduced, and the weight of the frequency hopping filtering system is reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of frequency hopping filters, and more specifically, to a medium-power frequency hopping filter suitable for a wide frequency band of 200-700 MHz. Background Art

[0002] At present, the frequency range of conventional medium-power (20-50W) frequency hopping filters needs to cover the frequency band of 200~700MHz, which can only be achieved by combining two frequency hopping filters (such as 200~400 MHz and 400~700 MHz) and two RF switches. Figure 1 As shown. The biggest bottleneck of this implementation method is its large size and heavy weight, which makes it difficult to meet the needs of miniaturization. If a frequency hopping filter can be used to achieve a frequency coverage of 200~700MHz, a frequency hopping filter and RF switch can be reduced, such as Figure 2 As shown, the size of the frequency hopping filter system can be greatly reduced, thereby effectively solving the current problems of large size and heavy weight.

[0003] At present, a large number of PIN diodes are used in frequency hopping filters: if it is a two-order, ten-group PIN diode switch capacitor array, the number of PIN diodes required is 20; if it is a three-order, twelve-group PIN diode switch capacitor array, the number of PIN diodes required is 36; and so on. PIN diodes are important components in frequency hopping filters; frequency hopping filters use the characteristics of PIN diodes being turned on and off to form a switch capacitor array with capacitors to achieve frequency band coverage. The equivalent model of the PIN diode when it is turned on is shown in Figure 3 (a), and the equivalent model when it is turned off is shown in Figure 3 (b).

[0004] The main reason why the 200~700MHz frequency coverage cannot be achieved at present is the characteristic parameters of the PIN diode. The characteristic parameter table of the PIN diode used for 20-50W medium power frequency hopping filter is shown in Table 1.

[0005] Table 1 Characteristic parameters of commonly used PIN diodes on the market In terms of achieving wide frequency band coverage, the total capacitance C and the series resistance Rs of the switched capacitor array composed of PIN diodes and resonant capacitors are crucial. However, the existing commonly used PIN diodes and resonant capacitors cannot achieve a frequency coverage of 200~700MHz after being combined into a switched capacitor array; therefore, it is necessary to improve the frequency hopping filter and PIN diodes so that a single frequency hopping filter can achieve a wide frequency band coverage of 200~700MHz. Summary of the invention

[0006] In order to overcome the shortcomings and deficiencies in the prior art, the purpose of the present invention is to provide a medium-power frequency hopping filter suitable for a 200-700MHz wide band; the frequency hopping filter can achieve full frequency band coverage of 200-700MHz with a single device, reduce the volume of the frequency hopping filter system and reduce the weight of the frequency hopping filter system.

[0007] In order to achieve the above object, the present invention is implemented by the following technical scheme: a medium power frequency hopping filter suitable for 200-700MHz wide band, comprising a radio frequency input port, a radio frequency output port, an input matching inductor module, an output matching inductor module, two or more resonant inductors and a PIN diode switch capacitor array; The RF input port and the RF output port are connected through an input matching inductor module, each resonant inductor that is critically coupled in sequence, and an output matching inductor module; each resonant inductor is connected one-to-one with a PIN diode switch capacitor array respectively; Each PIN diode switch capacitor array is composed of N groups of PIN diode switch capacitor units connected in parallel; each group of PIN diode switch capacitor units is composed of a PIN diode and a resonant capacitor connected in series; When all PIN diodes are turned off, the total capacitance C of each PIN diode switch capacitor array is the sum of the PIN diode junction capacitance Ct of all PIN diode switch capacitor units in the PIN diode switch capacitor array and the resonant capacitance C i The sum of the series, i=1,2，…，12 ; The total capacitance C is defined as: , where L is the resonant inductance value, f max =700MHz, so that the operating frequency of the frequency hopping filter can reach ≥700MHz when all PIN diodes are cut off; When all PIN diodes are turned on, the total capacitance C' of each PIN diode switch capacitor array is equal to the total resonant capacitance of all PIN diode switch capacitor arrays. C i The total capacitance C' is defined as: ,in, f min =200MHz, so that the operating frequency of the frequency hopping filter can reach ≤200MHz when all PIN diodes are fully turned on.

[0008] The frequency hopping filter of the present invention can realize that a single device meets the full frequency band coverage of 200-700 MHz, reduces the volume of the frequency hopping filter system and reduces the weight of the frequency hopping filter system.

[0009] Preferably, when all PIN diodes are turned off, the total capacitance C of each PIN diode switch capacitor array is: ; When all PIN diodes are turned on, the total capacitance C' of each PIN diode switch capacitor array is: .

[0010] Preferably, in the PIN diode switch capacitor array, K PIN diodes are integrated in a diode integrated chip by semiconductor integration, wherein 2≤K≤N; the diode integrated chip comprises a tube shell and K groups of diode components; the tube shell is provided with a cavity; the K groups of diode components are arranged side by side in the cavity; each group of diode components comprises: a diode bare chip, a molybdenum copper sheet and a gold wire; a plurality of welding islands are provided on the cavity wall; each diode bare chip and the molybdenum copper sheet are respectively arranged on the welding island; the cathode of the diode bare chip is attached to the welding island so that the welding island where the diode bare chip is located forms a cathode welding island, and the anode of the diode bare chip is bonded to the molybdenum copper sheet through the gold wire so that the welding island where the molybdenum copper sheet is located forms a cathode welding island; and electrical gaps are respectively provided between adjacent welding islands.

[0011] Preferably, the diode bare chip refers to a platform-shaped high-voltage silicon PIN diode bare chip with a round positive electrode and a square negative electrode; the high-voltage silicon PIN diode bare chip uses a high-voltage silicon PIN diode bare chip with a junction capacitance Cj of 0.7pF under a voltage of 100V, a maximum series resistance Rs of 0.3Ω, and a reverse voltage VR of 500V.

[0012] Preferably, in each PIN diode switch capacitor array, the number N of PIN diode switch capacitor units is twelve; the capacitance values ​​of the resonant capacitors C1~C12 of the twelve groups of PIN diode switch capacitor units are respectively: 0.4pf, 0.7pf, 1pf, 2pf, 3.9pf, 7.5pf, 10pf, 11pf, 12pf, 12pf, 15pf, 15pf; and the resonant inductance value L is 7nH.

[0013] Preferably, in each diode integrated chip, the number K of diode components is six.

[0014] Preferably, in the diode integrated chip, the diode bare chip and the welding island, as well as the molybdenum copper sheet and the welding island are respectively combined together using a eutectic process; the two ends of the gold wire are respectively connected to the positive electrode of the diode bare chip and the molybdenum copper sheet by bonding.

[0015] Preferably, the positive electrode welding islands and the negative electrode welding islands are arranged in rows, respectively; the positive electrode welding islands and the negative electrode welding islands are positioned opposite to each other one by one. This arrangement allows each group of diode components to be arranged side by side, thereby improving the consistency of the performance of each group of diode components.

[0016] Preferably, the electrical gap between adjacent positive electrode welding islands and the electrical gap between adjacent negative electrode welding islands are the same, both N; the electrical gap between the positive electrode welding island and the negative electrode welding island is M; M≥0.4mm; N≥0.4mm. The electrical gap of this setting can meet the electrical performance and insulation performance.

[0017] Preferably, the tube shell cavity is filled with an insulating medium.

[0018] Compared with the prior art, the present invention has the following advantages and beneficial effects: 1. The frequency hopping filter of the present invention, when all PIN diodes are cut off, the total capacitance of the PIN diode switch capacitor array can meet the operating frequency of the frequency hopping filter to reach ≥700MHz; when all PIN diodes are turned on, the total capacitance of the PIN diode switch capacitor array can meet the operating frequency of the frequency hopping filter to reach ≤200MHz; thus, a single device can meet the full frequency band coverage of 200-700MHz, reduce the volume of the frequency hopping filter system and reduce the weight of the frequency hopping filter system; it is suitable for 20-50W medium power frequency hopping filter applications; 2. The frequency hopping filter of the present invention integrates multiple PIN diodes into one by using a diode integrated chip, which can greatly optimize the space size occupied by the PIN diode in the circuit, further reduce the volume and reduce the weight. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 It is the principle block diagram of the existing conventional frequency hopping filtering system; Figure 2 This is a block diagram of the principle of using a single frequency hopping filter to achieve frequency coverage of 200~700MHz; Figure 3 (a) and Figure 3 (b) are the equivalent models of the PIN diode when it is turned on and when it is turned off, respectively; Figure 4 The present invention is a circuit schematic diagram of a medium power frequency hopping filter applicable to a 200-700MHz wide frequency band; Figure 5 This is one of the internal structure diagrams of the diode integrated chip applicable to the 200-700MHz wide-band medium-power frequency-hopping filter of the present invention; Figure 6 This is the second schematic diagram of the internal structure of the diode integrated chip applicable to the 200-700MHz wide-band medium-power frequency-hopping filter of the present invention; Figure 7 This is one of the structural schematic diagrams of the diode integrated chip applicable to the 200-700MHz wide-band medium-power frequency-hopping filter of the present invention; Figure 8This is the second structural schematic diagram of the diode integrated chip applicable to the 200-700MHz wide-band medium-power frequency-hopping filter of the present invention; Among them, 1 is the tube shell, 2 is the molybdenum copper sheet, 3 is the diode bare chip, 4 is the gold wire, 5 is the tube cap, and 6 is the welding island. DETAILED DESCRIPTION

[0020] The present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0021] Example This embodiment is a medium power frequency hopping filter suitable for a wide frequency band of 200-700 MHz. The circuit principle is as follows: Figure 4 As shown, it includes a radio frequency input port, a radio frequency output port, an input matching inductor module, an output matching inductor module, two or more resonant inductors and a PIN diode switch capacitor array.

[0022] The RF input port and the RF output port are connected through the input matching inductor module, the resonant inductors that are critically coupled in sequence, and the output matching inductor module; each resonant inductor is connected one-to-one with the PIN diode switch capacitor array. Each PIN diode switch capacitor array is composed of N groups of PIN diode switch capacitor units connected in parallel; each group of PIN diode switch capacitor units is composed of a PIN diode and a resonant capacitor connected in series.

[0023] In achieving wide frequency band coverage, the values ​​of the total capacitance C and the series resistance Rs of the PIN diode switched capacitor array are critical.

[0024] According to the frequency formula ; Wherein, L is the resonant inductance value and C is the total capacitance of the PIN diode switch capacitor array.

[0025] When all PIN diodes are turned off, the total capacitance C of each PIN diode switch capacitor array is the sum of the PIN diode junction capacitance Ct of all PIN diode switch capacitor units in the PIN diode switch capacitor array and the resonant capacitance C i The sum of the series, i=1,2，…，12 : ; The total capacitance C is defined as: ,in, f max =700MHz, so that the operating frequency of the frequency hopping filter can reach ≥700MHz when all PIN diodes are cut off; When all PIN diodes are turned on, the total capacitance C' of each PIN diode switch capacitor array is equal to the total resonant capacitance of all PIN diode switch capacitor arrays. Ci sum: ; The total capacitance C' is defined as: ,in, f min =200MHz, so that the operating frequency of the frequency hopping filter can reach ≤200MHz when all PIN diodes are fully turned on.

[0026] In this embodiment, the resonant inductance value L is a fixed value of 7nh, which together with the diode switch capacitor unit forms a parallel resonant circuit to determine the frequency. To achieve a frequency coverage of 200~700MHz, the value of C is ≤7.38pf, and the frequency can be ≥700M; the value of C is ≥90.47pf, and the frequency can be ≤200M.

[0027] The number N of PIN diode switch capacitor units is twelve; if the capacitance values ​​of the resonant capacitors C1 to C12 of the twelve groups of PIN diode switch capacitor units are respectively: 0.4pf, 0.7pf, 1pf, 2pf, 3.9pf, 7.5pf, 10pf, 11pf, 12pf, 12pf, 15pf, 15pf; if the existing PIN diode model MA4P506-1072T is selected, according to the parameters in Table 1, the junction capacitance of MA4P506-1072T is 1.0pF, then the value of C is 9.09pF, which is significantly greater than 7.38pf, so the operating frequency of the frequency hopping filter cannot reach 700M.

[0028] If the PIN diode model MA4P504-1072T or MA4P505-1072T is selected, the value of C can meet ≤7.38pf, but the series resistance Rs of these two PIN diodes is ≥0.45Ω, which will cause the passband loss to be too large when turned on and cannot meet the use requirements. The effect of different resistance values ​​on the loss is determined by using resistors of different values ​​(such as 0.3Ω, 0.35Ω, 0.4Ω, and 0.45Ω) to equalize the series resistance of the diode. It is found that when Rs≤0.35Ω, the passband loss is small; when 0.35Ω<Rs≤0.4Ω, the passband loss is too large and barely qualified; when Rs≥0.45Ω, the loss is too large and cannot meet the use requirements.

[0029] Since the power level of the medium-power frequency hopping filter must be above 20W, the minimum reverse breakdown voltage of the PIN diode must be ≥500V, otherwise the PIN diode is easily damaged under the condition of transmission power, causing the product to fail to work properly. Meeting the minimum reverse breakdown voltage ≥500V will limit the maximum junction capacitance and maximum series resistance of the PIN diode to a certain extent, and the maximum junction capacitance and maximum series resistance are in a trade-off relationship. With the capacitance values ​​of the above-mentioned resonant capacitors C1~C12 and the resonant inductance value L, in order to meet the 200-700MHz wide-band frequency hopping filtering, the maximum junction capacitance of the PIN diode needs to be ≤0.78pF. However, the current PIN diodes cannot simultaneously meet the conditions of minimum reverse breakdown voltage ≥500V, maximum junction capacitance ≤0.78pf and maximum series resistance ≤0.4Ω.

[0030] In this embodiment, in the PIN diode switch capacitor array, K PIN diodes are integrated into a diode integrated chip using a semiconductor integration method, and the design uses micro-assembly technology to achieve low series resistance Rs and small junction capacitance Ct, so that a frequency hopping filter can be used to achieve a frequency coverage of 200~700MHz, and the volume and weight are greatly reduced.

[0031] like Figures 5 to 8 As shown, the diode integrated chip includes a tube shell 11 and K groups of diode components, wherein 2≤K≤N; the tube shell 1 is provided with a cavity; and the K groups of diode components are arranged side by side in the cavity. In this embodiment, the number K of diode components in each diode integrated chip is six. In practical applications, the number K of diode components in each diode integrated chip can also be 2, 3, 4, 5, 7, ...

[0032] Each group of diode components includes: a diode bare chip 3, a molybdenum copper sheet 2 and a gold wire 4; a plurality of welding islands 6 are provided on the cavity wall; each diode bare chip 3 and the molybdenum copper sheet 2 are respectively arranged on the welding island 6; the negative electrode of the diode bare chip 3 is attached to the welding island 6 so that the welding island 6 where the diode bare chip 3 is located forms a negative electrode welding island 6, and the positive electrode of the diode bare chip 3 is bonded to the molybdenum copper sheet 2 through the gold wire 4 so that the welding island 6 where the molybdenum copper sheet 2 is located forms a positive electrode welding island 6.

[0033] In the diode integrated chip, the diode bare chip 3 and the welding island 6, as well as the molybdenum copper sheet 2 and the welding island 6 are respectively combined together using a eutectic process; the two ends of the gold wire 4 are respectively connected to the positive electrode of the diode bare chip 3 and the molybdenum copper sheet 2 by bonding.

[0034] The positive electrode welding islands 6 and the negative electrode welding islands 6 are arranged in rows; the positive electrode welding islands 6 and the negative electrode welding islands 6 are opposite to each other in one-to-one position. The electrical gap between adjacent positive electrode welding islands 6 and the electrical gap between adjacent negative electrode welding islands 6 are the same, both N; the electrical gap between the positive electrode welding island 6 and the negative electrode welding island 6 is M; M≥0.4mm; N≥0.4mm.

[0035] The tube shell 1 preferably includes a tube shell body and a tube cap 5; the cavity is opened in the tube body, and the tube cap 5 covers the cavity opening.

[0036] The cavity of the tube shell 1 is preferably filled with an insulating medium to improve the insulation performance of the tube shell cavity.

[0037] The diode bare chip 3 refers to a high-voltage silicon PIN diode bare chip 3, and an existing bare chip can be used; the high-voltage silicon PIN diode bare chip 3 uses a high-voltage silicon PIN diode bare chip 3 with a junction capacitance Cj of 0.7pF under a voltage of 100V, a series resistance Rs of a maximum of 0.3Ω, and a reverse voltage VR of 500V; its electrical parameters are shown in Table 2.

[0038] Table 2 Electrical parameters of high voltage silicon PIN diode bare chip at room temperature The diode bare chip 3 is overall in the shape of a platform; the positive electrode is circular with a diameter of 400um; the negative electrode is square with a size of 700um*700um; and the height is 300um.

[0039] The diode integrated chip of the present invention can greatly optimize the space occupied by the PIN diode in the circuit. The space occupied by the diode integrated chip integrating six PIN diodes in this embodiment is compared with the space occupied by six independent PIN diodes of model MA4P506-1072T assembled side by side: In this embodiment, the following dimensions are taken as an example: the dimensions of the molybdenum copper sheet and the diode bare chip are 0.7mm×0.7mm, the electrical clearance N is 0.8mm, M is 1.2mm, the distance L between the outermost welding island and the edge is 0.5mm, and the welding island dimension is 0.7mm×0.9mm; the dimensions of the diode integrated chip: length = 0.7×6+0.8×5+0.5×2=9.2mm, width = 0.9×2+1.2=3mm, height = 2.5mm.

[0040] The space occupied by six PIN diodes of model MA4P506-1072T assembled side by side is: Calculated with an electrical clearance of 0.8 mm, the space occupied is: length = (2.4×6+0.8×5) = 18.4 mm, width 3.4 mm, height 2.4 mm. In comparison, the space occupied by the diode integrated chip in this embodiment is reduced by about 50%, which greatly optimizes the space occupied by the PIN diode.

[0041] The junction capacitance of a PIN diode refers to the capacitance effect of a diode under reverse bias, and the size of the junction capacitance depends on factors such as the junction area, doping concentration, and applied voltage of the diode. The diode bare chip of the present invention adopts a platform structure, removes the curved part of the planar junction, improves the surface breakdown voltage, reduces the edge capacitance and inductance, and reduces the junction capacitance of the PIN diode by effectively reducing the junction area.

[0042] Taking advantage of the natural miniaturization of micro-assembly, the molybdenum copper sheet 2 is used as the packaging electrode and bonded to the positive electrode of the diode bare chip by gold wire; the bonding gold wire is micron-grade, short and thin, and the end face of the diode bare chip does not need to be supported by a molybdenum copper cylinder to connect to the packaging electrode like a conventional diode, so the distributed capacitance generated in the package and the tube shell is very small. The performance index comparison of the diode integrated chip of the present invention and a single existing PIN diode model MA4P506-1072T is shown in Table 3: Table 3 Performance index comparison parameters of the diode integrated chip of the present invention and MA4P506-1072T As can be seen from Table 3, the diode integrated chip of the present invention can effectively reduce the influence of parameters such as distributed capacitance, so that the difference between the junction capacitance Ct of the PIN diode and the junction capacitance Cj of the diode bare chip is very small, and the requirements of low series resistance Rs and small junction capacitance Ct of the PIN diode are effectively achieved. The sum of the series connection of all PIN diodes with the capacitors C1~C12 when they are cut off is 7.32pf<7.38pf, which meets the requirement that the operating frequency of the frequency hopping filter reaches 700M; when all the PIN diodes are turned on, the capacitance value is 90.5pf, and the operating frequency of the frequency hopping filter is 199.9M, which meets the requirement of reaching 200M, and the series resistance Rs of the diode integrated chip is 0.33Ω, Rs≤0.35Ω, and the passband loss is small, which meets the use requirements.

[0043] The above embodiments are preferred implementation modes of the present invention, but the implementation modes of the present invention are not limited to the above embodiments. Any other changes, modifications, substitutions, combinations, and simplifications that do not deviate from the spirit and principles of the present invention should be equivalent replacement methods and are included in the protection scope of the present invention.

Claims

1. A medium power frequency hopping filter suitable for 200-700MHz wide band, characterized in that: It includes a radio frequency input port, a radio frequency output port, an input matching inductor module, an output matching inductor module, two or more resonant inductors and a PIN diode switch capacitor array; The RF input port and the RF output port are connected through an input matching inductor module, each resonant inductor that is critically coupled in sequence, and an output matching inductor module; each resonant inductor is connected one-to-one with a PIN diode switch capacitor array respectively; Each PIN diode switch capacitor array is composed of N groups of PIN diode switch capacitor units connected in parallel; each group of PIN diode switch capacitor units is composed of a PIN diode and a resonant capacitor connected in series; When all PIN diodes are turned off, the total capacitance C of each PIN diode switch capacitor array is the sum of the PIN diode junction capacitance Ct of all PIN diode switch capacitor units in the PIN diode switch capacitor array and the resonant capacitance C i The sum of the series, i =1,2，…，12 ; The total capacitance C is defined as: , where L is the resonant inductance value, f max =700MHz, so that the operating frequency of the frequency hopping filter can reach ≥700MHz when all PIN diodes are cut off; When all PIN diodes are turned on, the total capacitance C' of each PIN diode switch capacitor array is equal to the total resonant capacitance of all PIN diode switch capacitor arrays. C i The total capacitance C' is defined as: ,in, f min =200MHz, so that the operating frequency of the frequency hopping filter can reach ≤200MHz when all PIN diodes are fully turned on.

2. The medium power frequency hopping filter suitable for 200-700MHz wide band according to claim 1, characterized in that: When all PIN diodes are turned off, the total capacitance C of each PIN diode switch capacitor array is: ； When all PIN diodes are turned on, the total capacitance C' of each PIN diode switch capacitor array is: 。 3. The medium power frequency hopping filter applicable to a wide frequency band of 200-700 MHz according to claim 1, characterized in that: In the PIN diode switch capacitor array, K PIN diodes are integrated in a diode integrated chip by semiconductor integration, wherein 2≤K≤N; the diode integrated chip comprises a tube shell and K groups of diode components; the tube shell is provided with a cavity; the K groups of diode components are arranged side by side in the cavity; each group of diode components comprises: a diode bare chip, a molybdenum copper sheet and a gold wire; a plurality of welding islands are provided on the cavity wall; each diode bare chip and the molybdenum copper sheet are respectively arranged on the welding island; the cathode of the diode bare chip is attached to the welding island so that the welding island where the diode bare chip is located forms a cathode welding island, and the anode of the diode bare chip is bonded to the molybdenum copper sheet through the gold wire so that the welding island where the molybdenum copper sheet is located forms a cathode welding island; and electrical gaps are respectively provided between adjacent welding islands.

4. The medium power frequency hopping filter applicable to a wide frequency band of 200-700 MHz according to claim 3, characterized in that: The diode bare chip refers to a platform-shaped high-voltage silicon PIN diode bare chip with a round positive electrode and a square negative electrode; the high-voltage silicon PIN diode bare chip uses a high-voltage silicon PIN diode bare chip with a junction capacitance Cj of 0.7pF under a voltage of 100V, a maximum series resistance Rs of 0.3Ω, and a reverse voltage VR of 500V.

5. The medium power frequency hopping filter applicable to a wide frequency band of 200-700 MHz according to claim 4, characterized in that: In each PIN diode switch capacitor array, the number N of PIN diode switch capacitor units is twelve; the capacitance values ​​of the resonant capacitors C1~C12 of the twelve groups of PIN diode switch capacitor units are respectively: 0.4pf, 0.7pf, 1pf, 2pf, 3.9pf, 7.5pf, 10pf, 11pf, 12pf, 12pf, 15pf, 15pf; the resonant inductance value L is 7nH.

6. The medium power frequency hopping filter applicable to a wide frequency band of 200-700 MHz according to claim 5, characterized in that: In each diode integrated chip, the number K of diode components is six.

7. The medium power frequency hopping filter applicable to a wide frequency band of 200-700 MHz according to any one of claims 3 to 6, characterized in that: In the diode integrated chip, the diode bare chip and the welding island, as well as the molybdenum copper sheet and the welding island are respectively bonded together using a eutectic process; the two ends of the gold wire are respectively connected to the positive electrode of the diode bare chip and the molybdenum copper sheet by bonding.

8. The medium power frequency hopping filter applicable to a wide frequency band of 200-700 MHz according to any one of claims 3 to 6, characterized in that: The positive electrode welding islands and the negative electrode welding islands are arranged in rows respectively; the positive electrode welding islands and the negative electrode welding islands are positioned opposite to each other one by one.

9. The medium power frequency hopping filter applicable to a wide frequency band of 200-700 MHz according to claim 8, characterized in that: The electrical gap between adjacent positive electrode welding islands and the electrical gap between adjacent negative electrode welding islands are the same, both N; the electrical gap between the positive electrode welding island and the negative electrode welding island is M; M ≥ 0.4mm; N≥0.4mm.

10. The medium power frequency hopping filter applicable to a wide frequency band of 200-700 MHz according to any one of claims 3 to 6, characterized in that: The tube shell cavity is filled with an insulating medium.

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