Rapid AE method, system and device based on infineon chip and storage medium

Abstract

The invention discloses a rapid AE method, system and device based on an infineon chip and a storage medium. The method comprises the steps that S1, a speckle pattern and corresponding exposure time are acquired; s2, extracting a speckle center on the speckle pattern; s3, calculating an average amplitude value and an overexposure pixel proportion according to the speckle center; and S4, judging whether the overexposure pixel proportion is close to an ideal value, performing fine adjustment when the overexposure pixel proportion is close to the ideal value, and performing coarse adjustment when the overexposure pixel proportion is not close to the ideal value. According to the invention, the speckle pattern based on the infineon chip can achieve the effect of rapid convergence in a short time.

Description

[0001] Technology Neighborhood

[0002] The present invention relates to the field of image exposure adjustment technology, and in particular to a fast AE method, system, device and storage medium based on an Infineon chip. Background Art

[0003] The AE algorithm is used to calculate the exposure time of the speckle pattern, and the exposure time largely determines the quality of the captured image. In a motion scene, the scene captured by the module will change at any time, which means that the captured material and depth are changing, that is, the exposure time needs to change accordingly. In a motion scene, we can calculate the current exposure based on the current image and the previous information. The previous information here refers to the amplitude map before the current frame and its corresponding exposure time. Assuming that the scene has not changed significantly in a short period of time, that is, the exposure time has not changed significantly, then the predicted exposure time can be used for the next frame. The assumption that the scene has not changed significantly in a short period of time requires that the exposure time can be calculated in a very short time, and information from too long ago cannot be used, or even only the information of the current frame can be used.

[0004] The speckle pattern obtained by the Infineon chip can be used for 3D reconstruction. The quality of the speckle pattern will affect the reconstruction result. The AE algorithm plays a great role in optimizing the quality of the speckle pattern. Unlike many other chips, the speckle pattern of the Infineon chip has the characteristic that the pixel value will decrease irregularly after exceeding a certain value as the exposure time increases. This will cause a large deviation in the amplitude value of a single speckle. This feature increases the difficulty of the AE algorithm, and the ordinary AE algorithm cannot take effect.

[0005] The disclosure of the above background technology content is only used to assist in understanding the inventive concept and technical solution of the present invention. It does not necessarily belong to the prior art of this patent application. In the absence of clear evidence that the above content has been disclosed on the filing date of this patent application, the above background technology should not be used to evaluate the novelty and creativity of the present application. Summary of the invention

[0006] To this end, the present invention is based on the speckle pattern of the Infineon chip, and uses the speckle pattern and its corresponding exposure value to calculate the exposure time. When the exposure time is far from the ideal value, it first jumps to the vicinity of the ideal exposure time, and then gradually approaches the ideal exposure time when it is near the ideal value, thereby achieving the effect of rapid convergence in a short time.

[0007] In a first aspect, the present invention provides a fast AE method based on an Infineon chip, characterized by comprising:

[0008] Step S1: obtaining a speckle pattern and a corresponding exposure time;

[0009] Step S2: extracting the speckle center from the speckle pattern;

[0010] Step S3: calculating the average amplitude value and the overexposed pixel ratio according to the speckle center;

[0011] Step S4: determining whether the overexposed pixel ratio is close to an ideal value, and performing fine adjustment if it is close to the ideal value, and performing coarse adjustment if it is not close to the ideal value.

[0012] Optionally, the fast AE method based on the Infineon chip is characterized in that, in step S2, the pixel points on the speckle pattern are traversed with a first radius, and the pixel values ​​of the center point and other points within the first radius are determined, and if the brightness of the center point is the maximum value within the first radius, the center point is marked as the speckle center.

[0013] Optionally, the fast AE method based on the Infineon chip is characterized in that the calculation of the average amplitude value in step S3 includes:

[0014] Step S31: Calculate the amplitude value of each of the eight neighborhoods of the speckle center;

[0015] Step S32: Calculate the average of the c largest amplitude values ​​as the average amplitude; wherein c is the product of the number of the speckle centers and a preset ratio.

[0016] Optionally, the fast AE method based on the Infineon chip is characterized in that, when calculating the overexposed pixel ratio in step S3, the speckle center with an amplitude value greater than the amplitude threshold is marked as a preliminary overexposed speckle center, and then the preliminary overexposed speckle centers within the first distance are merged to obtain the final overexposed speckle center, and the number of the final overexposed speckle centers is divided by the total number of pixels to obtain the overexposed pixel ratio; wherein the first distance is greater than the first radius.

[0017] Optionally, the fast AE method based on the Infineon chip is characterized in that, when judging whether the overexposed pixel ratio is near the ideal value in step S4, the ideal value is multiplied by a threshold value u greater than 1 as an upper bound, and multiplied by a value d less than 1 as a lower bound, as a proximity search range, and the exposure value corresponding to the ideal value on the average amplitude value straight line is taken as a proximity point; when the overexposed pixel ratio corresponding to the current image is within the proximity search range, it is regarded as being near the ideal value, otherwise it is regarded as not being near the ideal value.

[0018] Optionally, the fast AE method based on the Infineon chip is characterized in that the coarse adjustment in step S4 includes:

[0019] Step S41: obtaining an average amplitude value straight line according to the average amplitude value;

[0020] Step S42: determining an ideal amplitude value according to the current distance and the overexposed pixel ratio;

[0021] Step S43: Calculate the coarse exposure time according to the average amplitude value straight line and the ideal amplitude value.

[0022] Optionally, the fast AE method based on the Infineon chip is characterized in that when fine-tuning is performed in step S4, the fine-tuning exposure time is calculated according to the formula nt=ct+s2*(ir-cr) / pl, s2 is a scaling factor greater than 0 and less than 1; wherein pl is the slope of the average amplitude value straight line, cr is the overexposure ratio, ct is the exposure time, ir is the ideal overexposure ratio, and nt is the fine-tuning exposure time.

[0023] In a second aspect, the present invention provides a fast AE system based on an Infineon chip, which is used to implement any of the aforementioned fast AE methods based on an Infineon chip, and is characterized by comprising:

[0024] An acquisition module, used for acquiring a speckle pattern and a corresponding exposure time;

[0025] An extraction module, used for extracting a speckle center from the speckle pattern;

[0026] A calculation module, used for calculating an average amplitude value and an overexposed pixel ratio according to the speckle center;

[0027] The adjustment module is used to determine whether the overexposed pixel ratio is near an ideal value, and to perform fine adjustment when it is near the ideal value, and to perform coarse adjustment when it is not near the ideal value.

[0028] In a third aspect, the present invention provides a fast AE device based on an Infineon chip, characterized in that it comprises:

[0029] processor;

[0030] a memory storing executable instructions of the processor;

[0031] The processor is configured to execute any of the steps of the aforementioned fast AE method based on the Infineon chip by executing the executable instructions.

[0032] In a fourth aspect, the present invention provides a computer-readable storage medium for storing a program, characterized in that when the program is executed, the steps of any of the aforementioned fast AE methods based on the Infineon chip are implemented.

[0033] Compared with the prior art, the present invention has the following beneficial effects:

[0034] The present invention is based on the speckle pattern of the Infineon chip, and uses the speckle pattern and its corresponding exposure value to calculate the exposure time. When the exposure time is far from the ideal value, it first jumps to the vicinity of the ideal exposure time, and then gradually approaches the ideal exposure time when it is near the ideal value, so that the effect of rapid convergence in a short time can be achieved.

[0035] The present invention can quickly calculate the exposure time of the next frame using only the speckle pattern and its corresponding exposure value. The calculation relies on less data, has fast calculation and response, and is suitable for rapid adjustment of exposure of mobile scenes. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings required for use in the embodiments or the prior art descriptions are briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without creative work. Other features, purposes and advantages of the present invention will become more obvious by reading the detailed description of the non-limiting embodiments with reference to the following drawings:

[0037] Figure 1 This is a flowchart of a fast AE method based on an Infineon chip in an embodiment of the present invention;

[0038] Figure 2 is a schematic diagram of a speckle pattern in an embodiment of the present invention;

[0039] Figure 3 This is a flow chart of the steps of calculating the average amplitude value in an embodiment of the present invention;

[0040] Figure 4 A schematic diagram of an average amplitude value and an overexposed pixel ratio in an embodiment of the present invention;

[0041] Figure 5 A schematic diagram of a proximity search range in an embodiment of the present invention;

[0042] Figure 6 A flowchart of a step of performing a rough adjustment in an embodiment of the present invention;

[0043] Figure 7This is a schematic diagram of the structure of a fast AE system based on an Infineon chip in an embodiment of the present invention;

[0044] Figure 8 is a schematic structural diagram of a fast AE device based on an Infineon chip in an embodiment of the present invention; and

[0045] Fig. 9 Schematic diagram of the structure of a computer-readable storage medium in an embodiment of the present invention. DETAILED DESCRIPTION

[0046] The present invention is described in detail below in conjunction with specific embodiments. The following embodiments will help those skilled in the art to further understand the present invention, but are not intended to limit the present invention in any form. It should be noted that, for those of ordinary skill in the art, several variations and improvements may be made without departing from the concept of the present invention. These all belong to the protection scope of the present invention.

[0047] The terms "first", "second", "third", "fourth", etc. (if any) in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein, for example, can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0048] An embodiment of the present invention provides a fast AE method based on an Infineon chip, aiming to solve the problems existing in the prior art.

[0049] The following specific embodiments are used to describe in detail the technical solutions of the present invention and how the technical solutions of the present application solve the above-mentioned technical problems. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be repeated in some embodiments. The embodiments of the present invention will be described below in conjunction with the accompanying drawings.

[0050] The present invention is based on the speckle pattern of the Infineon chip, and uses the speckle pattern and its corresponding exposure value to calculate the exposure time. When the exposure time is far from the ideal value, it first jumps to the vicinity of the ideal exposure time, and then gradually approaches the ideal exposure time when it is near the ideal value, so as to achieve the effect of rapid convergence in a short time.

[0051] Figure 1 FIG. 1 is a flowchart of a fast AE method based on an Infineon chip in an embodiment of the present invention. Figure 1 As shown, the steps of a fast AE method based on an Infineon chip in an embodiment of the present invention include:

[0052] Step S1: Obtain a speckle pattern and a corresponding exposure time.

[0053] In this step, the image sensor of the Infineon chip is used to capture the current scene and generate a speckle pattern. At the same time, the exposure time at this time is recorded as the exposure time. Figure 2 As shown in FIG. 1 , a speckle pattern is a pattern formed when a light spot projected by a speckle projector is reflected on a target object. Through the speckle pattern, depth information can be calculated using the parallax principle.

[0054] Step S2: extracting the speckle center from the speckle pattern.

[0055] In this step, the key feature point, i.e., the speckle center, is extracted from the speckle pattern for subsequent analysis and calculation. The speckle center can be located and extracted on the speckle pattern using image processing algorithms (such as image segmentation, centroid algorithm, edge detection algorithm, etc.). The speckle center is the most critical point of the speckle, and the speckle center can be used to characterize the characteristics of the speckle, such as the location of the speckle, and the number of speckles.

[0056] Step S3: calculating the average amplitude value and the overexposed pixel ratio according to the speckle center.

[0057] In this step, the average amplitude value and the ratio of overexposed pixels of the pixels around the center of the speckle are calculated based on the information of the center of the speckle to evaluate the exposure quality. The amplitude value is used to characterize the brightness change. The average amplitude value of the amplitude values ​​of multiple pixels around the center of the speckle is calculated as the average amplitude value to characterize the overall brightness of the current speckle. Since the amplitude value of the Infineon chip will decrease randomly after overexposure, it is impossible to directly use the overexposed pixels for judgment. In this embodiment, the amplitude values ​​of multiple points around the center of the speckle are used to judge whether it is overexposed. Overexposure means that the amplitude value is greater than a preset threshold. The ratio of pixels in the speckle image whose average amplitude value exceeds the preset threshold is counted as a quantitative indicator of the degree of overexposure. The calculation of the average amplitude value and the ratio of overexposed pixels needs to take into account the lighting conditions and camera parameters in different scenes to ensure the accuracy and reliability of the evaluation results.

[0058] Step S4: determining whether the overexposed pixel ratio is close to an ideal value, and performing fine adjustment if it is close to the ideal value, and performing coarse adjustment if it is not close to the ideal value.

[0059] In this step, the exposure adjustment strategy is determined according to the overexposed pixel ratio to achieve fast and accurate exposure control. An ideal overexposed pixel ratio range is preset, and whether the current overexposed pixel ratio is within the range is determined based on the calculation results. When the overexposed pixel ratio is near the ideal value, a smaller exposure adjustment step is used for fine-tuning to gradually approach the optimal exposure state. When the overexposed pixel ratio is far from the ideal value, a larger exposure adjustment step is used for rapid adjustment to quickly approach the optimal exposure range. The switching strategy between fine adjustment and coarse adjustment needs to be designed and optimized according to the actual scene and camera performance to ensure the efficiency and accuracy of exposure adjustment. At the same time, the real-time and stability of exposure adjustment also need to be considered to avoid image flickering or instability caused by frequent adjustments.

[0060] In some embodiments, in step S2, the pixels on the speckle pattern are traversed with a first radius, and the pixel values ​​of the center point and other points within the first radius are determined. If the brightness of the center point is the maximum value within the first radius, the center point is marked as the speckle center. An initial search radius, i.e., the first radius, is set. When the first radius is r, the calculation is performed within a range of r×r centered on the current position, where r can be 3, 5, 7, 9 or any other value. The size of the first radius needs to be determined according to the resolution of the speckle pattern and the average size of the speckle. An empty data structure (such as a list or an array) is created to store the extracted speckle center coordinates. Each pixel on the speckle pattern is traversed, and each pixel is temporarily regarded as a potential speckle center. For each potential speckle center point, take it as the center, take the set first radius as the search range, and check all the pixels within the range. Calculate the brightness value of each pixel within the range and compare it with the brightness value of the center point. If the brightness value of the center point is the maximum value within the search range (or exceeds a preset threshold and is the local maximum value within the range), the center point is marked as a valid speckle center. The coordinates of the center of the speckle are stored in the previously created data structure. After the traversal and search are completed, the data structure storing the coordinates of the center of the speckle is output for use in subsequent steps.

[0061] Figure 3 FIG. 1 is a flow chart of steps for calculating the average amplitude value in an embodiment of the present invention. Figure 3 As shown, a step of calculating the average amplitude value in an embodiment of the present invention includes:

[0062] Step S31: Calculate the amplitude value of each of the eight neighborhoods of the speckle center.

[0063] In this step, for each speckle center on the speckle pattern, its eight-neighborhood is defined as the adjacent pixel points including those above, below, left, right, and in the four diagonal directions centered at the speckle center. For the eight-neighborhood of each speckle center, calculate the amplitude value of each pixel point therein. The amplitude value is the brightness value of the pixel point or some processed measure that can reflect the importance of the pixel point. Store the amplitude values of each speckle center and its eight-neighborhood for subsequent processing.

[0064] Step S32: Calculate the mean of the c largest of the said amplitude values as the average amplitude; wherein, the c is the product of the number of the speckle centers and a preset ratio.

[0065] In this step, calculate the value of c according to the number of speckle centers (denoted as N) and the preset ratio (denoted as P, 0 < P ≤ 1). Specifically, c = N * P, where P is a preset parameter used to control how many of the largest amplitude values are selected to calculate the average amplitude. Select c of the largest amplitude values from all the amplitude values of the speckle centers and their eight-neighborhoods. Sum up the selected c largest amplitude values and then divide by c to obtain the average amplitude value. For example, take 1% of the number of speckles as the threshold c and calculate the mean of the c largest values as the average amplitude.

[0066] In this embodiment, the amplitude is evaluated through the neighborhood of the speckle center, fully considering the characteristics that after overexposure of the Infineon chip, the amplitude value will decrease and there is no pattern, but its neighborhood generally will not be overexposed, and it can accurately identify the overexposed area for subsequent calculation.

[0067] In some embodiments, when calculating the overexposed pixel ratio in step S3, the speckle center with an amplitude value greater than the amplitude threshold is marked as a preliminary overexposed speckle center, and then the preliminary overexposed speckle centers within the first distance are merged to obtain the final overexposed speckle center, and the number of the final overexposed speckle centers is divided by the total number of pixels to obtain the overexposed pixel ratio; wherein the first distance is greater than the first radius. First, an amplitude threshold is set according to the brightness distribution and exposure of the image. This threshold is used to distinguish between normal brightness and overexposed speckle centers. The ideal exposure time can keep the overexposed pixel ratio at a lower ratio, such as 1%, 1.5%, 2% or any other lower value. S1 represents the total number of pixels, t represents the ideal overexposed ratio, and the ideal overexposed number ir is t*s1. Traverse all speckle centers, and if the amplitude value of a speckle center is greater than the set amplitude threshold, it is marked as a preliminary overexposed speckle center. A first distance (greater than the first radius mentioned above) is set to determine which preliminary overexposed speckle centers are spatially adjacent and can be merged into the final overexposed speckle center. For each preliminary overexposed speckle center, check other preliminary overexposed speckle centers within the first distance around it. If such centers exist, merge them into a final overexposed speckle center. The merge can be achieved by selecting one of these centers as a representative, or by calculating their average position or attributes. After the merge operation, a set of final overexposed speckle centers is obtained. The number of final overexposed speckle centers obtained after the merge is counted. The number of final overexposed speckle centers is divided by the total number of pixels to obtain the overexposed pixel ratio.

[0068] Figure 4 Schematic diagram of average amplitude value and overexposed pixel ratio in an embodiment of the present invention. Figure 4 The statistical data of different exposures at a distance of 40cm from the black wall is shown in the figure. The horizontal axis is the exposure time, and the vertical axis on the left is the amplitude value. The dotted line in the figure is the average amplitude value, and the solid line is the ratio of overexposed pixels. When testing different materials at different distances, the statistical data obtained are different, that is, Figure 4 The position and slope of the line in the image will be different. However, when testing different materials and distances, the following points remain unchanged: 1. The average amplitude value is close to a straight line and passes through the 0 point, but the slope is different for different materials and distances. 2. The overexposure ratio curve is close to a straight line near the ideal overexposure ratio value on the vertical axis, and is close to parallel to the average amplitude mean. 3. There is a point nr on the vertical axis, and its exposure value corresponding to the average amplitude value straight line is close to the ideal exposure value.

[0069] In step S4, when determining whether the overexposed pixel ratio is near the ideal value, the ideal value is multiplied by a threshold value u greater than 1 as the upper limit, and multiplied by a value d less than 1 as the lower limit, as a proximity search range, and the exposure value corresponding to the ideal value on the average amplitude value straight line is taken as a proximity point; when the overexposed pixel ratio corresponding to the current image is within the proximity search range, it is considered to be near the ideal value, otherwise it is considered to be not near the ideal value. Figure 5 As shown in FIG. 1 , k is within the monitoring search range, while j and i are not within the adjacent search range. When the overexposed pixel ratio corresponding to the current image is within the adjacent search range, the exposure value is fine-tuned, otherwise it is roughly adjusted.

[0070] Figure 6 FIG. 1 is a flow chart of a step of performing a rough adjustment in an embodiment of the present invention. Figure 6 As shown, a step of performing coarse adjustment in an embodiment of the present invention includes:

[0071] Step S41: obtaining an average amplitude value straight line according to the average amplitude value.

[0072] In this step, when the overexposed pixel ratio is not near the ideal value, the exposure value is roughly adjusted. At this time, the overexposed pixel ratio is much larger or much smaller than the ideal value, which also means that the current exposure time is far from the ideal value. According to statistical information, such as Figure 4 and Figure 5 As shown, the average amplitude mean straight line is a straight line passing through point 0. When the exposure parameters of the depth camera are fixed, the size of the average amplitude value is related to the slope of the average amplitude value straight line, and the average amplitude value straight line can be calculated.

[0073] Step S42: Determine an ideal amplitude value according to the current distance and the overexposed pixel ratio.

[0074] In this step, the exposure time and the average amplitude mean at this time are known, that is, a point on the straight line passing through the 0 point is known, and the horizontal axis value corresponding to any vertical axis value can be calculated using the average amplitude value straight line, that is, the exposure time. According to the current distance and overexposure ratio, the ideal amplitude value can be obtained.

[0075] Step S43: Calculate the coarse exposure time according to the average amplitude value straight line and the ideal amplitude value.

[0076] In this step, the exposure time corresponding to 1000 is calculated by the average amplitude straight line as the exposure time of the next frame, so that it can jump to the ideal value in one step. Figure 5 The i and j points in the image need to be adjusted to the adjacent points first, so that fine-tuning can be performed in the next frame. Figure 5The ideal amplitude value in can be taken as 1000. By calculating the exposure time corresponding to 1000 on the average amplitude line as the exposure time of the next frame, it is possible to jump to the ideal value in one step.

[0077] This embodiment uses the average amplitude value to linearly adjust the exposure parameters with large deviations to the adjacent search range in one step, thereby greatly shortening the adjustment time of the Infineon chip. Even when the overexposure data is inaccurate, a more accurate ideal amplitude value and fast exposure adjustment capability can be obtained.

[0078] In some embodiments, when fine-tuning is performed in step S4, the fine-tuning exposure time is calculated according to the formula nt=ct+s2*(ir-cr) / pl, where s2 is a scaling factor greater than 0 and less than 1; wherein pl is the slope of the average amplitude value straight line, cr is the overexposure ratio, ct is the exposure time, ir is the ideal overexposure ratio, and nt is the fine-tuning exposure time. According to statistical results, at this time, the overexposed pixel ratio is a straight line, and is nearly parallel to the amplitude mean straight line. The slope of the amplitude mean straight line can be used as the slope of the overexposure ratio straight line. Since the overexposed pixel ratio curve and the amplitude mean straight line are nearly parallel, but not completely parallel, and there is a certain difference, s2 can be used to prevent a large jump in one step, so that the exposure adjustment approaches the ideal value at a more reasonable speed. Figure 5 If the k points in the search are within the range of the nearest search, we can gradually jump to the ideal point.

[0079] Figure 7 FIG. 1 is a schematic diagram of a fast AE system based on an Infineon chip in an embodiment of the present invention. Figure 7 As shown, a fast AE system based on an Infineon chip in an embodiment of the present invention includes:

[0080] An acquisition module, used for acquiring a speckle pattern and a corresponding exposure time;

[0081] An extraction module, used for extracting a speckle center from the speckle pattern;

[0082] A calculation module, used for calculating an average amplitude value and an overexposed pixel ratio according to the speckle center;

[0083] The adjustment module is used to determine whether the overexposed pixel ratio is near an ideal value, and to perform fine adjustment when it is near the ideal value, and to perform coarse adjustment when it is not near the ideal value.

[0084] This embodiment is based on the speckle pattern of the Infineon chip, and uses the speckle pattern and its corresponding exposure value to calculate the exposure time. When the exposure time is far from the ideal value, it first jumps to the vicinity of the ideal exposure time, and then gradually approaches the ideal exposure time when it is near the ideal value, so as to achieve the effect of rapid convergence in a short time.

[0085] The embodiment of the present invention also provides a fast AE device based on an Infineon chip, comprising a processor and a memory, wherein executable instructions of the processor are stored, wherein the processor is configured to execute the steps of a fast AE method based on an Infineon chip by executing the executable instructions.

[0086] As described above, this embodiment is based on the speckle pattern of the Infineon chip, and uses the speckle pattern and its corresponding exposure value to calculate the exposure time. When the exposure time is far from the ideal value, it first jumps to the vicinity of the ideal exposure time, and then gradually approaches the ideal exposure time when it is near the ideal value, thereby achieving the effect of rapid convergence in a short time.

[0087] It will be appreciated by those skilled in the art that various aspects of the present invention may be implemented as systems, methods or program products. Therefore, various aspects of the present invention may be specifically implemented in the following forms, namely: a complete hardware implementation, a complete software implementation (including firmware, microcode, etc.), or a combination of hardware and software implementations, which may be collectively referred to herein as "circuits", "modules" or "platforms".

[0088] Figure 8 Schematic diagram of the structure of a fast AE device based on an Infineon chip in an embodiment of the present invention. Figure 8 The electronic device 600 according to this embodiment of the present invention is described. Figure 8 The electronic device 600 shown is only an example and should not bring any limitation to the functions and scope of use of the embodiments of the present invention.

[0089] like Figure 8 As shown, the electronic device 600 is in the form of a general computing device. The components of the electronic device 600 may include, but are not limited to: at least one processing unit 610, at least one storage unit 620, a bus 630 connecting different platform components (including the storage unit 620 and the processing unit 610), a display unit 640, etc.

[0090] The storage unit stores program codes, which can be executed by the processing unit 610, so that the processing unit 610 executes the steps of various exemplary embodiments of the present invention described in the above-mentioned fast AE method based on Infineon chip. For example, the processing unit 610 can execute the following steps: Figure 1 Follow the steps shown in .

[0091] The storage unit 620 may include a readable medium in the form of a volatile storage unit, such as a random access memory unit (RAM) 6201 and / or a cache memory unit 6202 , and may further include a read-only memory unit (ROM) 6203 .

[0092] The storage unit 620 may also include a program / utility 6204 having a set (at least one) of program modules 6205, such program modules 6205 including but not limited to: an operating system, one or more application programs, other program modules, and program data, each of which or some combination may include an implementation of a grid environment.

[0093] Bus 630 may represent one or more of several types of bus structures, including a memory unit bus or memory unit controller, a peripheral bus, an accelerated graphics port, a processing unit, or a local bus using any of a variety of bus architectures.

[0094] The electronic device 600 may also communicate with one or more external devices 700 (e.g., keyboards, pointing devices, Bluetooth devices, etc.), one or more devices that enable a user to interact with the electronic device 600, and / or any device that enables the electronic device 600 to communicate with one or more other computing devices (e.g., routers, modems, etc.). Such communication may be performed through an input / output (I / O) interface 650. Furthermore, the electronic device 600 may also communicate with one or more grids (e.g., a local area network (LAN), a wide area network (WAN), and / or a public grid, such as the Internet) through a grid adapter 660. The grid adapter 660 may communicate with other modules of the electronic device 600 through the bus 630. It should be understood that although Figure 8 Not shown, other hardware and / or software modules may be used in conjunction with electronic device 600, including but not limited to: microcode, device drivers, redundant processing units, external disk drive arrays, RAID systems, tape drives, and data backup storage platforms.

[0095] In an embodiment of the present invention, a computer-readable storage medium is also provided for storing a program, and when the program is executed, the steps of a fast AE method based on an Infineon chip are implemented. In some possible implementations, various aspects of the present invention can also be implemented in the form of a program product, which includes a program code. When the program product is run on a terminal device, the program code is used to enable the terminal device to execute the steps of various exemplary embodiments of the present invention described in the above-mentioned fast AE method based on an Infineon chip section of this specification.

[0096] As shown above, this embodiment is based on the speckle pattern of the Infineon chip, and uses the speckle pattern and its corresponding exposure value to calculate the exposure time. When the exposure time is far from the ideal value, it first jumps to the vicinity of the ideal exposure time, and then gradually approaches the ideal exposure time when it is near the ideal value, so that the effect of rapid convergence in a short time can be achieved.

[0097] Fig. 9 Schematic diagram of the structure of a computer-readable storage medium in an embodiment of the present invention. Fig. 9 As shown, a program product 800 for implementing the above method according to an embodiment of the present invention is described, which can adopt a portable compact disk read-only memory (CD-ROM) and include program code, and can be run on a terminal device, such as a personal computer. However, the program product of the present invention is not limited thereto. In this document, a readable storage medium can be any tangible medium containing or storing a program, which can be used by or in combination with an instruction execution system, an apparatus or a device.

[0098] The program product may use any combination of one or more readable media. The readable medium may be a readable signal medium or a readable storage medium. The readable storage medium may be, for example, but not limited to, an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, device or device, or any combination of the above. More specific examples of readable storage media (a non-exhaustive list) include: an electrical connection with one or more wires, a portable disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above.

[0099] Computer readable storage media may include data signals propagated in baseband or as part of a carrier wave, wherein readable program codes are carried. Such propagated data signals may take various forms, including but not limited to electromagnetic signals, optical signals, or any suitable combination thereof. The readable storage medium may also be any readable medium other than a readable storage medium, which may send, propagate, or transmit a program for use by or in conjunction with an instruction execution system, device, or device. The program codes contained on the readable storage medium may be transmitted using any suitable medium, including but not limited to wireless, wired, optical cable, RF, etc., or any suitable combination thereof.

[0100] Program code for performing the operations of the present invention may be written in any combination of one or more programming languages, including object-oriented programming languages ​​such as Java, C++, etc., and conventional procedural programming languages ​​such as "C" or similar programming languages. The program code may be executed entirely on the user computing device, partially on the user device, as a separate software package, partially on the user computing device and partially on a remote computing device, or entirely on a remote computing device or server. In cases involving a remote computing device, the remote computing device may be connected to the user computing device through any type of grid, including a local area network (LAN) or a wide area network (WAN), or may be connected to an external computing device (e.g., via the Internet using an Internet service provider).

[0101] This embodiment is based on the speckle pattern of the Infineon chip, and uses the speckle pattern and its corresponding exposure value to calculate the exposure time. When the exposure time is far from the ideal value, it first jumps to the vicinity of the ideal exposure time, and then gradually approaches the ideal exposure time when it is near the ideal value, so as to achieve the effect of rapid convergence in a short time.

[0102] In this specification, each embodiment is described in a progressive manner, and each embodiment focuses on the differences from other embodiments, and the same and similar parts between the embodiments can be referred to each other. The above description of the disclosed embodiments enables professionals and technicians in this field to implement or use the present invention. The various modifications to these embodiments will be obvious to professionals and technicians in this field, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to these embodiments shown in this article, but will comply with the widest range consistent with the principles and novel features disclosed herein.

[0103] The above describes the specific embodiments of the present invention. It should be understood that the present invention is not limited to the above specific embodiments, and those skilled in the art can make various modifications or variations within the scope of the claims, which do not affect the essence of the present invention.

Claims

1. A fast AE method based on Infineon chip, characterized in that: include: Step S1: obtaining a speckle pattern and a corresponding exposure time; Step S2: extracting the speckle center from the speckle pattern; Step S3: calculating the average amplitude value and the overexposed pixel ratio according to the speckle center; Step S4: determining whether the overexposed pixel ratio is close to an ideal value, and performing fine adjustment if it is close to the ideal value, and performing coarse adjustment if it is not close to the ideal value.

2. A fast AE method based on Infineon chip according to claim 1, characterized in that: In step S2, the pixels on the speckle pattern are traversed with a first radius, and the pixel values ​​of the center point and other points within the first radius are determined. If the brightness of the center point is the maximum value within the first radius, the center point is marked as the speckle center.

3. A fast AE method based on Infineon chip according to claim 1, characterized in that: The calculation of the average amplitude value in step S3 includes: Step S31: Calculate the amplitude value of each of the eight neighborhoods of the speckle center; Step S32: Calculate the average of the c largest amplitude values ​​as the average amplitude; wherein c is the product of the number of the speckle centers and a preset ratio.

4. The fast AE method based on Infineon chip according to claim 1, characterized in that: When calculating the overexposed pixel ratio in step S3, the speckle center with an amplitude value greater than the amplitude threshold is marked as a preliminary overexposed speckle center, and then the preliminary overexposed speckle centers within the first distance are merged to obtain final overexposed speckle centers, and the number of the final overexposed speckle centers is divided by the total number of pixels to obtain the overexposed pixel ratio; wherein the first distance is greater than the first radius.

5. The fast AE method based on Infineon chip according to claim 1, characterized in that: When judging whether the overexposed pixel ratio is near the ideal value in step S4, the ideal value is multiplied by a threshold value u greater than 1 as an upper bound, and multiplied by a value d less than 1 as a lower bound as a proximity search range, and the exposure value corresponding to the ideal value on the average amplitude value straight line is taken as a proximity point; when the overexposed pixel ratio corresponding to the current image is within the proximity search range, it is considered to be near the ideal value, otherwise it is considered not to be near the ideal value.

6. The fast AE method based on Infineon chip according to claim 1, characterized in that: The rough adjustment in step S4 includes: Step S41: obtaining an average amplitude value straight line according to the average amplitude value; Step S42: determining an ideal amplitude value according to the current distance and the overexposed pixel ratio; Step S43: Calculate the coarse exposure time according to the average amplitude value straight line and the ideal amplitude value.

7. The fast AE method based on Infineon chip according to claim 1, characterized in that: When fine-tuning is performed in step S4, the fine-tuning exposure time is calculated according to the formula nt=ct+s2*(ir-cr) / pl, where s2 is a scaling factor greater than 0 and less than 1; wherein pl is the slope of the average amplitude value straight line, cr is the overexposure ratio, ct is the exposure time, ir is the ideal overexposure ratio, and nt is the fine-tuning exposure time.

8. A fast AE system based on an Infineon chip, used to implement the fast AE method based on an Infineon chip according to any one of claims 1 to 7, characterized in that: include: An acquisition module, used for acquiring a speckle pattern and a corresponding exposure time; An extraction module, used for extracting a speckle center from the speckle pattern; A calculation module, used for calculating an average amplitude value and an overexposed pixel ratio according to the speckle center; The adjustment module is used to determine whether the overexposed pixel ratio is near an ideal value, and to perform fine adjustment when it is near the ideal value, and to perform coarse adjustment when it is not near the ideal value.

9. A fast AE device based on Infineon chip, characterized in that: include: processor; a memory storing executable instructions of the processor; The processor is configured to execute the steps of the fast AE method based on the Infineon chip according to any one of claims 1 to 7 by executing the executable instructions.

10. A computer-readable storage medium for storing a program, characterized in that: When the program is executed, the steps of the fast AE method based on the Infineon chip described in any one of claims 1 to 7 are implemented.

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