Ceramic susceptor and method for manufacturing base body of ceramic susceptor

Abstract

The present invention relates to a ceramic susceptor and a method for manufacturing a base body of the ceramic susceptor, the base body of the method for manufacturing the base body of the ceramic susceptor of the present invention comprising a joined body of a lower plate and an upper plate, each of which is made of a cermet composite material, the method for manufacturing the base body of the ceramic base comprises the following steps of: sequentially laminating a first active metal layer, a first aluminum layer and a brazing filler metal layer on the joint surface of the upper plate; sequentially laminating a second active metal layer and a second aluminum layer on the joint surface of the lower plate; and the lower plate and the upper plate are subjected to brazing connection through the brazing filler metal layer.

Description

Technical Field

[0001] The present invention relates to a ceramic base, and in particular to a brazing joint for improving the bonding force between an upper plate and a lower plate of a metal matrix composite material (MMC), namely a metal ceramic composite material matrix. Background Art

[0002] Typically, a semiconductor device or display device is manufactured by patterning a plurality of thin film layers including a dielectric layer and a metal layer after being sequentially stacked on a glass substrate, a flexible substrate or a semiconductor wafer substrate. These thin film layers are sequentially deposited on the substrate by a chemical vapor deposition (CVD) process or a physical vapor deposition (PVD) process. The CVD process includes a low pressure chemical vapor deposition (LPCVD) process, a plasma enhanced chemical vapor deposition (PECVD) process, and an organic metal chemical vapor deposition (MOCVD) process.

[0003] Such a CVD device and PVD device is provided with a ceramic base for supporting a glass substrate, a flexible substrate, a semiconductor wafer substrate, etc. and for processing a semiconductor process. The ceramic base can be provided in the CVD device and the PVD device, and is provided with a chuck electrode for supporting the substrate and a heating wire for heating the substrate in a heat treatment process, etc. In addition, the ceramic base can be provided with a high-frequency (RF) electrode instead of a heating wire, or can be further provided with a high-frequency (RF) electrode to form plasma in an etching process, etc., of a thin film layer formed on a substrate.

[0004] Figure 1A and Figure 1B This is a diagram for explaining the problems of the conventional ceramic susceptor. Figure 1A The figure shows the bonding of the upper plate and the lower plate based on the brazing filler of the Al-based matrix. Figure 1B The figure shows the joining of an upper plate and a lower plate using a brazing filler based on a metal matrix composite (MMC), that is, a metal-ceramic composite matrix.

[0005] like Figure 1AAs shown, the upper plate and the lower plate of the Al-based substrate of the existing ceramic base can be joined using a conventional aluminum brazing method. At this time, since the substrate and the brazing material are made of the same series of materials, a good brazing joint can be achieved.

[0006] Nowadays, with the change of extreme process environment, especially in order to prevent low temperature deformation, metal matrix composite (MMC) composed of Al and ceramic powder is suitable for the base of ceramic base. Figure 1B As shown, with regard to the MMC metal-ceramic composite material matrix of the existing ceramic base, when the upper plate and the lower plate are joined by conventional aluminum brazing, since the brazing materials between the metal-ceramic composite materials are from different series of materials, there are problems such as leakage of process gas (He gas, etc.) in the process within the semiconductor device due to poor joining, leakage of cooling water in the cooling flow path, and poor vacuum, which becomes the cause of defective process itself or reduced yield. Summary of the invention

[0007] Problem that the invention aims to solve

[0008] Therefore, the present invention is proposed to solve the above-mentioned problems. The purpose of the present invention is to provide a method for manufacturing a ceramic base substrate and a ceramic base using the substrate. In order to improve the bonding strength between the upper plate and the lower plate of the metal matrix composite material (Metal Matric Composite, MMC), that is, the metal ceramic composite material substrate, a multi-layer (active metal layer and aluminum layer) surface treatment is applied between the base plate and the brazing material.

[0009] Means used to solve problems

[0010] First, summarizing the features of the present invention, in a method for manufacturing a base of a ceramic base of one aspect of the present invention for achieving the purpose, the base includes a lower plate and an upper plate respectively made of a metal-ceramic composite material, and a joint between the lower plate and the upper plate; the method for manufacturing the base of the ceramic base includes the following steps: stacking a first active metal layer, a first aluminum layer and a brazing material layer in sequence on the joint surface of the upper plate, stacking a second active metal layer and a second aluminum layer in sequence on the joint surface of the lower plate, and brazing the lower plate and the upper plate together through the brazing material layer.

[0011] A groove is provided on the joint surface of the lower plate.

[0012] The first active metal layer and the second active metal layer may include one or more of Ti, Zr, Nb, Hf, and Ta.

[0013] The thickness of the first active metal layer and the second active metal layer may be 1 μm to 5 μm.

[0014] The thickness of the first aluminum layer and the second aluminum layer may be 5 μm to 10 μm.

[0015] Moreover, another aspect of the present invention includes a ceramic base including a substrate and an insulating plate, wherein the substrate includes a lower plate and an upper plate respectively made of a metal-ceramic composite material, and a joint between the lower plate and the upper plate; the joint includes: a first active metal layer, a first aluminum layer and a brazing material layer stacked in sequence on one side of the upper plate, and a second active metal layer and a second aluminum layer stacked in sequence on one side of the lower plate; the lower plate and the upper plate are brazed together through the brazing material layer.

[0016] Effects of the Invention

[0017] According to the ceramic base and the manufacturing method thereof of the present invention, by applying a multi-layer (active metal layer and aluminum layer) surface treatment between each plate in the upper plate and the lower plate of the substrate and the brazing material, the bonding force between the upper plate and the lower plate of the MMC metal-ceramic composite material substrate can be improved, thereby improving the vacuum degree by reducing the leakage rate of He gas, etc. generated in the process within the semiconductor device, and reducing the leakage of the refrigerant in the cooling flow path, thereby maintaining a stable process and helping to improve the yield rate. In the embodiment, it was confirmed that the leakage rate of the He gas was reduced from the previous 1.0E03 (mbar*l / s) to the improved level of 2.0.E-08 (mbar*l / s). BRIEF DESCRIPTION OF THE DRAWINGS

[0018] To help understanding of the present invention, the accompanying drawings, which are included as a part of the detailed description, provide embodiments of the present invention and, together with the detailed description, serve to explain the technical concept of the present invention.

[0019] Figure 1A and Figure 1B This is a diagram for explaining the problems of the conventional ceramic susceptor.

[0020] FIG. 2A to FIG. 2C It is a cross-sectional view of a base lower plate and an upper plate for explaining a method for manufacturing a ceramic base according to an embodiment of the present invention.

[0021] Figure 3 It is a diagram for explaining a bonding structure between a base body and an insulating plate of a ceramic base according to an embodiment of the present invention.

[0022] Figure 4 This is an example of a photograph of an actual manufacturing process of a lower plate of a base body of a ceramic susceptor according to an embodiment of the present invention.

[0023] Figure 5This is an example of a photograph of an actually manufactured upper plate of a base body of a ceramic susceptor according to an embodiment of the present invention, as viewed from above.

[0024] Description of Reference Numerals

[0025] 220: On the board

[0026] 321: First active metal layer

[0027] 322: First aluminum layer

[0028] 323: Brazing material layer

[0029] 210: Lower board

[0030] 215: Cooling flow path

[0031] 211: Groove

[0032] 311: Second active metal layer

[0033] 312: Second aluminum layer

[0034] 1100: Base

[0035] 1200: Insulation board DETAILED DESCRIPTION

[0036] Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. At this time, in each of the accompanying drawings, the same components are represented by the same figure marks as much as possible. In addition, the detailed description of the known functions and / or structures is omitted. The content disclosed below focuses on the parts required for understanding the actions of various embodiments, and omits the description of the elements that make the main purpose of the description unclear. In addition, some of the components in the drawings may be enlarged or omitted, or shown schematically. The size of each component does not fully reflect the actual size, so the content recorded here is not limited to the relative size or spacing of the components shown in each of the accompanying drawings.

[0037] In the process of describing the embodiments of the present invention, when it is judged that the specific description of the known technology related to the present invention unnecessarily confuses the main idea of ​​the present invention, the detailed description thereof will be omitted. Moreover, the terms described below, as terms defined by considering the functions in the present invention, can be changed according to the intention or convention of the user, operator. Therefore, it should be defined based on the content of the full text of this specification. The terms used in the detailed description are only used to describe the embodiments of the present invention and should not be restrictive. Unless otherwise explicitly stated, the expression of a single number of forms includes the meaning of a plurality of numbers of forms. In the process of this description, expressions such as "including" or "provided with" are used to indicate certain characteristics, numbers, steps, actions, elements, parts or combinations of these, and should not be interpreted as excluding the existence or possibility of one or more other characteristics, numbers, steps, actions, elements, parts or combinations of these other than those described.

[0038] In addition, terms such as “first” and “second” may be used to describe a plurality of components, but the components are not limited to the terms, and the terms are only used to distinguish one component from other components.

[0039] First, in the present invention, the ceramic base is a semiconductor device used to process processing object substrates for various purposes (semiconductor wafers, glass substrates, flexible substrates, etc.). In order to support the processing object substrate, an electrostatic chuck electrode used as an electrostatic chuck may be provided. In order to heat the processing object substrate at a specified temperature, a heating wire (or heating element) may be provided. Or in order to perform process treatment (plasma enhanced chemical vapor deposition, etc.) on the processing object substrate, a high-frequency electrode may be provided, or a high-frequency electrode may be used instead of the heating wire.

[0040] Therefore, as described below, the conductor (or electrode) mentioned is explained by taking the heating wire (or heating element) as an example, but is not limited to this, and it is explained in advance that the conductor can also be directly applied to the high-frequency electrode or the electrostatic chuck electrode.

[0041] For example, the heating wire (or heating element) as the conductor (or electrode) may be formed in a plate-like coil form or a flat plate form based on a resistance wire having a prescribed resistance. In addition, in order to accurately control the temperature, the heating wire (or heating element) may also be formed in a multilayer structure. Such a heating wire (or heating element) may receive a power supply and perform a function of heating a substrate located on the upper surface of a ceramic base to a constant temperature, so as to perform a smooth deposition process and an etching process in a semiconductor manufacturing process.

[0042] In addition, for example, the electrostatic chuck electrode or high-frequency electrode as the conductor (or electrode) may be composed of silver (Ag), gold (Au), nickel (Ni), tungsten (W), molybdenum (Mo), titanium (Ti), etc., or alloys thereof, etc., which are conductive metal materials. The electrostatic chuck electrode may receive a bias voltage from a power source in a semiconductor manufacturing process and generate an electrostatic force, thereby clamping a substrate located on the upper surface of a ceramic base, and when the substrate is unloaded, it may receive a reverse bias voltage to cause discharge, thereby achieving release of clamping. The high-frequency electrode may receive a power source in a semiconductor manufacturing process and may be capable of performing a process (plasma enhanced chemical vapor deposition, etc.) on the substrate located on the upper surface of a ceramic base.

[0043] The ceramic base 1000 of the present invention as described above includes a base body ( Figure 3 1100) and insulation board ( Figure 3 1200), the substrate includes a lower plate ( Figure 3 of 210) and the upper plate ( Figure 3 The insulating plate is bonded to the substrate, and the conductors (or electrodes) 1210 and 1220 as described above are arranged / buried in the insulating plate ( Figure 3 within 1200).

[0044] Below, refer to FIG. 2A to FIG. 2C and Figures 3 to 5 , a method for manufacturing a ceramic base 1000 according to an embodiment of the present invention and a structure of the ceramic base 1000 manufactured thereby are described in detail.

[0045] FIG. 2A to FIG. 2C It is a cross-sectional view of a base lower plate and an upper plate for explaining a method for manufacturing a ceramic base according to an embodiment of the present invention.

[0046] First, refer to Figure 2A In order to manufacture the ceramic base 1000 according to an embodiment of the present invention, first, a first active metal layer 321, a first aluminum layer 322 and a brazing material layer 323 are sequentially stacked on a bonding surface of the upper plate 220 (ie, a surface on one side of the upper plate 220).

[0047] In addition, refer to Figure 2B , on the joint surface of the lower plate 210 (i.e., the cooling flow path of the lower plate 210 ( Figure 3 The groove 211 (see Figure 4 ) and a second active metal layer 311 and a second aluminum layer 312 are sequentially stacked on the substrate ).

[0048] In addition, refer to Figure 2CThe lower plate 210 and the upper plate 220 are brazed together through the brazing material layer 323, thereby manufacturing the base 1100 of the ceramic base 1000 of the present invention composed of a joint body of the lower plate 210 and the upper plate 220.

[0049] For the brazing bonding, the lower plate 210 and the upper plate 220 are brought into close contact, and then heated at high temperature and cooled, and the conductive filler of the brazing material layer 323 can bond the lower plate 210 and the upper plate 220. For example, Au-Ni metal filler and Al-based metal filler can be used as the conductive filler of the brazing material layer 323. One side of the upper plate 220 is bonded to the lower plate 210, such as Figure 5 As shown, an insulating plate ( Figure 3 The hole 225 corresponding to the hole 1200 of the insulating plate ( 1200 ) is connected to a flow path for providing cooling gas, etc., and can be configured to provide a cooling gas to the insulating plate ( Figure 3 Cooling gas is provided above 1200).

[0050] As mentioned above, in order to prevent deformation caused by changes in extreme process environment (especially low-temperature deformation), the lower plate 210 and the upper plate 220 are made of metal-ceramic composite materials (i.e., metal-based composite materials of Al-ceramic composite powders). For example, they can be made of composite powders of Al and SiC, Si, B (boron), Al2O3 (aluminum oxide) and graphite.

[0051] In addition, the first active metal layer 321 of the upper plate 220 and the second active metal layer 311 of the lower plate 210 may include any one of Ti, Zr, Nb, Hf and Ta or alloys thereof, and the thickness thereof may be 1 μm to 5 μm.

[0052] In addition, the thickness of the first aluminum layer 322 of the upper plate 220 and the second aluminum layer 312 of the lower plate 210 may be 5 μm to 10 μm.

[0053] When the brazing is performed, the first active metal layer 321 of the upper plate 220 and the second active metal layer 311 of the lower plate 210 may be melted together with the conductive filler, the first aluminum layer 322 and the second aluminum layer 312 to improve bonding. At the interface with different physical and chemical properties, an interface product may be formed by inducing a redox reaction to improve bonding on both sides (see "Joining of ceramics and metals using active metal brazing", Journal of the Microelectronics & Packaging Society, Vol. 18, No. 3, pp. 1-7, 2011).

[0054] When the base 1100 is obtained by the method for manufacturing the ceramic base 1000 according to an embodiment of the present invention as described above, the ceramic base 1000 according to an embodiment of the present invention may be manufactured by bonding the base 1100 and the insulating plate 1200 .

[0055] Figure 3 This is a diagram for explaining a bonding structure between a base body 1100 and an insulating plate 1200 of a ceramic base 1000 according to an embodiment of the present invention.

[0056] Reference Figure 3 For a ceramic base 1000 according to an embodiment of the present invention, the ceramic base 1000 according to the present invention as described above includes a base 1100 and an insulating plate 1200, wherein the base includes a joint of a lower plate 210 and an upper plate 220, and the insulating plate is joined to the base.

[0057] Conductors (or electrodes) 1210 and 1220 are arranged / buried in the insulating plate 1200 as described above. As described above, the ceramic base 1000 is a semiconductor device for processing substrates for various purposes (such as semiconductor wafers, glass substrates, flexible substrates, etc.), and the conductors (or electrodes) 1210 and 1220 can be electrostatic chuck electrodes used as electrostatic chucks to support the substrates, heating wires (or heating elements) for heating the substrates at a predetermined temperature, or high-frequency electrodes for processing the substrates (plasma enhanced chemical vapor deposition, etc.).

[0058] The base 1100 includes a cooling flow path 215 formed in the groove portion 211 by brazing the lower plate 210 and the upper plate 220 through the brazing material layer 323. The cooling flow path 215 is a flow path for circulating a coolant (for example, cooling water and cooling oil, etc.), and in order to maintain the temperature of the ceramic base 1000 at a constant level during the semiconductor process, the coolant can be circulated through the cooling flow path 215.

[0059] On the other hand, the joints 230 and 240 of the lower plate 210 and the upper plate 220 are formed between the cooling flow paths 215. The joints 230 and 240 between the lower plate 210 and the upper plate 220 may include an upper plate joint 240 and a lower plate joint 230. The upper plate joint 240 includes a first active metal layer 321, a first aluminum layer 322, and a brazing material layer 323 sequentially stacked on one side of the upper plate 220, and the lower plate joint 230 includes a second active metal layer 311 and a second aluminum layer 312 sequentially stacked on one side of the lower plate 210. The lower plate 210 and the upper plate 220 are brazed together through the brazing material layer 323.

[0060] Example

[0061] The following Table 1 shows the manufacturing results of the substrate 1100 using a lower plate 210 and an upper plate 220 of a metal-ceramic composite material (MMC) and using an Al-based metal filler as the surface treatment conditions of the joints 230 and 240, depending on whether the active metal layers 311 and 321 and the aluminum (Al) layers 312 and 322 are used (used: O, not used: X) and whether the He gas and cooling water are leaked.

[0062] [Table 1]

[0063]

[0064] As shown in Table 1 above, in the case where the active metal layers 311, 321 and the aluminum layers 312, 322 were not used and in the case where the active metal layers 311, 321 were used but the aluminum layers 312, 322 were not used, the poor cooling water leakage and the poor He gas leakage in the joint (He gas leakage standard 1.0E-04 (mbar*l / s) or more) were confirmed. However, as shown in the present invention, in the case where the lower plate 210 and the upper plate 220 of the metal-ceramic composite material (MMC) were used and the active metal layers 311, 321 and the aluminum layers 312, 322 were used as the surface treatment conditions of the joints 230, 240 for brazing, it was confirmed that there was no cooling water leakage due to the excellent bonding of the joints 230, 240, and the gas leakage was improved to a negligible level (less than the He gas leakage standard 1.0E-04 (mbar*l / s)).

[0065] The following Table 2 shows the comparison results of the defective rate of the substrate 1100 manufactured by using the lower plate 210 and the upper plate 220 of the metal-ceramic composite material (MMC) and using Al-based metal filler in the brazing layer 323 as the surface treatment conditions of the joint 230 and 240, depending on whether the active metal layer 311, 321 and the aluminum layer 312, 322 are used (used: O, not used: X).

[0066] [Table 2]

[0067]

[0068] As shown in Table 2 above, in the case where the active metal layers 311, 321 and the aluminum layers 312, 322 are not used and in the case where the active metal layers 311, 321 are used but the aluminum layers 312, 322 are not used, the defect rate of cooling water leakage and He gas leakage in the joint is an average of 77% (He gas leakage standard 1.0E-04 (mbar*l / s) or above).

[0069] However, in the present invention, when the lower plate 210 and the upper plate 220 are made of metal-ceramic composite materials (MMC) and the surface treatment conditions of the joints 230 and 240 are both brazed using active metal layers 311 and 321 and aluminum layers 312 and 322, the defective rate is shown to be 0 due to the excellent joining of the joints 230 and 240.

[0070] According to the ceramic base and its manufacturing method of the present invention, by applying a multi-layer (active metal layer and aluminum layer) surface treatment between each plate in the upper plate 220 and the lower plate 210 of the substrate and the brazing material, the bonding force between the upper plate 220 and the lower plate 210 of the MMC metal ceramic composite material substrate 1100 can be improved, thereby improving the vacuum degree by reducing the leakage rate of He gas, etc. generated in the process within the semiconductor device, and reducing the leakage of the refrigerant in the cooling flow path, thereby maintaining a stable process and helping to improve the yield rate. In the embodiment, it was confirmed that the leakage rate of the He gas was reduced from the previous 1.0E-03 (mbar*l / s) to the improved level of 2.0.E-08 (mbar*l / s).

[0071] As described above, in the present invention, specific matters such as specific constituent elements and limited embodiments and drawings are used for explanation, but this is only provided for a more comprehensive understanding of the present invention, and the present invention is not limited to the embodiments, and any person skilled in the art of the present invention can make various modifications and variations within the scope of the essential characteristics of the present invention. Therefore, the idea of ​​the present invention should not be limited to the illustrated embodiments, and not only the attached claims, but all technical ideas that are equivalent to or have equivalent variations of the claims should be interpreted as being included in the scope of the present invention.

Claims

1. A method for manufacturing a ceramic base, wherein: The substrate includes a lower plate and an upper plate respectively made of a metal-ceramic composite material, and a joint between the lower plate and the upper plate; The method for manufacturing the base of the ceramic base comprises the following steps: A first active metal layer, a first aluminum layer and a brazing material layer are sequentially stacked on the joint surface of the upper plate. A second active metal layer and a second aluminum layer are sequentially stacked on the joint surface of the lower plate, and The lower plate and the upper plate are joined together by brazing through the brazing material layer.

2. The method for manufacturing a ceramic base according to claim 1, wherein: A groove is provided on the joint surface of the lower plate.

3. The method for manufacturing a ceramic base according to claim 1, wherein: The first active metal layer and the second active metal layer include one or more of Ti, Zr, Nb, Hf, and Ta.

4. The method for manufacturing a ceramic base according to claim 1, wherein: The thickness of the first active metal layer and the second active metal layer is 1 μm to 5 μm.

5. The method for manufacturing a ceramic base according to claim 1, wherein: The thickness of the first aluminum layer and the second aluminum layer is 5 μm to 10 μm.

6. A ceramic base, comprising a base and an insulating plate, wherein: The substrate includes a lower plate and an upper plate respectively made of a metal-ceramic composite material, and a joint between the lower plate and the upper plate; The joint portion comprises: A first active metal layer, a first aluminum layer and a brazing material layer are sequentially stacked on one side of the upper plate, and A second active metal layer and a second aluminum layer are sequentially stacked on one side of the lower plate; The lower plate and the upper plate are joined by brazing via the brazing material layer.

7. The ceramic susceptor according to claim 6, wherein: The joining portion is formed between cooling flow paths of the base body.

8. The ceramic susceptor according to claim 6, wherein: The first active metal layer and the second active metal layer include one or more of Ti, Zr, Nb, Hf, and Ta.

9. The ceramic susceptor according to claim 6, wherein: The thickness of the first active metal layer and the second active metal layer is 1 μm to 5 μm.

10. The ceramic susceptor according to claim 6, wherein: The thickness of the first aluminum layer and the second aluminum layer is 5 μm to 10 μm.

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