Driving circuit, motor driving chip, motor control device and electric equipment
By using a combined driving method of silicon-based and silicon carbide power devices in the DC brushless motor driving circuit, the problem of large switching losses is solved, lower switching and conduction losses are achieved, and the service life of the device is extended.
Patent Information
- Application Number
- CN202411697604.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-25
- Publication Date
- 2025-02-28
AI Technical Summary
In the existing DC brushless motor driving circuit, the IGBT has a large switching loss, which causes the device to heat up and may be damaged.
A driving circuit is adopted, including a silicon-based power device and a silicon carbide power device. By driving the silicon-based power device to conduct in the on- and off stages, the silicon-based power device to conduct in the on-stage, the low loss characteristics of both are used to reduce switching and conduction losses.
It effectively reduces the switching loss and conduction loss of power devices, and improves the service life of power devices and driving circuits.
Smart Images

Figure CN119543618A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of integrated circuit technology, and more specifically to a drive circuit, a motor drive chip, a motor control device and an electric device. Background Art
[0002] Brushless DC motors have the advantages of simple structure, high operating efficiency, good speed regulation performance and simple control, and are widely used in many industries. Figure 1 As shown, the driving circuit of the brushless DC motor usually includes a motor driving chip and a power module. The microcontroller unit (MCU) outputs a control signal to the motor driving chip. The motor driving chip amplifies the output signal of the MCU to generate a current to drive the load power module to drive the power device in the power module to turn on and off. Therefore, the MCU controls the rotation of the motor by controlling the motor driving chip to drive the power module.
[0003] In the related art, the power devices inside the power module usually use insulated-gate bipolar transistors (IGBTs). The switching loss of IGBTs is relatively large, and the switching loss will be directly converted into heat, causing the device to heat up, and even damage the device in severe cases.
[0004] Therefore, how to reduce the switching loss of power devices in the driving circuit and increase the service life of the power devices has become a technical problem that needs to be solved urgently. Summary of the invention
[0005] The present application is proposed in view of the above problems. The present application provides a drive circuit, a motor drive chip, a motor control device and an electric device, which can reduce the switching loss of power devices and increase the service life of power devices.
[0006] According to a first aspect of the present application, a driving circuit is provided, the driving circuit comprising:
[0007] Power device unit, including:
[0008] The first silicon-based power device;
[0009] A first silicon carbide power device, wherein the first silicon carbide power device is connected in parallel with the first silicon-based power device;
[0010] The second silicon-based power device;
[0011] A second silicon carbide power device, the second silicon carbide power device is connected in parallel with the second silicon-based power device, and is connected in series with the first silicon carbide power device and the first silicon-based power device that are connected in parallel;
[0012] A power device driving circuit, wherein the power device driving circuit has a plurality of output terminals, wherein the control terminals of the first silicon-based power device, the second silicon-based power device, the first silicon carbide power device, and the second silicon carbide power device are respectively connected to one of the output terminals, wherein the power device driving circuit is used for:
[0013] When the power device unit is used as an output loop of a power signal, the first silicon carbide power device is driven to be turned on in the turn-on phase and the turn-off phase of the power device unit, and the first silicon-based power device is driven to be turned on in the turn-on phase of the power device unit;
[0014] When the power device unit is used as an input loop of a power signal, the second silicon carbide power device is driven to be turned on in the turn-on phase and the turn-off phase of the power device unit, and the second silicon-based power device is driven to be turned on in the turn-on phase of the power device unit.
[0015] The above technical solution has the following advantages or beneficial effects: by driving the silicon carbide power device to be turned on in the turn-on phase and the turn-off phase of the power device unit respectively, and driving the silicon-based power device to be turned on in the turn-on phase of the power device unit, the advantage of the small switching loss of the silicon carbide power device can be utilized to reduce the switching loss of the power device; at the same time, the advantage of the small conduction loss of the silicon-based power device is utilized to achieve a lower conduction loss of the power device, thereby increasing the service life of the power device and the driving circuit.
[0016] In some embodiments of the present application, the first silicon-based power device, the second silicon-based power device, the first silicon carbide power device and the second silicon carbide power device respectively have a first end and a second end, the first end of the first silicon-based power device and the first end of the first silicon carbide power device are both connected to a circuit power supply, the second end of the second silicon-based power device and the second end of the second silicon carbide power device are grounded, and the second end of the first silicon-based power device, the second end of the first silicon carbide power device, the first end of the second silicon-based power device, and the first end of the second silicon carbide power device are all connected to the output end of the driving circuit.
[0017] The above technical solution has the following advantages or beneficial effects: the second end of the first silicon-based power device, the second end of the first silicon carbide power device, the first end of the second silicon-based power device, and the first end of the second silicon carbide power device are all connected to the output end of the driving circuit, so that the power signal can be output through the first silicon-based power device or the first silicon carbide power device, thereby driving the load device; the second silicon-based power device or the second silicon carbide power device is used as an input loop of the power signal to drive the load device.
[0018] In some embodiments of the present application, the driving circuit further includes:
[0019] An overcurrent protection circuit is used to generate an overcurrent protection signal when the current flowing through the power device unit is greater than a preset current threshold; the overcurrent protection circuit has multiple input terminals, each input terminal is correspondingly connected to the second terminal of the first silicon-based power device, the second terminal of the first silicon carbide power device, the first terminal of the second silicon-based power device, and the first terminal of the second silicon carbide power device, and the output terminal of the overcurrent protection circuit is connected to the overcurrent protection signal input terminal of the power device driving circuit.
[0020] The above technical solution has the following advantages or beneficial effects: through the overcurrent protection circuit, when the current is greater than the preset current threshold, an overcurrent protection signal can be generated to cut off the input circuit or output circuit of the power signal, prevent large current from damaging the drive circuit, and achieve effective protection of the drive circuit.
[0021] According to a second aspect of the present application, a motor driver chip is provided, comprising:
[0022] At least one driving circuit according to any one of the first aspect of the present application, the driving circuit having a first input terminal;
[0023] The logic control circuit is used to generate a control signal for controlling at least one of the driving circuits. The logic control circuit has at least one first output terminal, and each of the first output terminals is connected to a corresponding first input terminal of the driving circuit.
[0024] The above technical solution has the following advantages or beneficial effects: the motor driver chip integrates silicon-based power devices and silicon carbide power devices, and utilizes the low switching loss of silicon carbide power devices and the low conduction loss of silicon-based power devices to make the chip have a low power consumption structure, thereby optimizing the chip structure, reducing the switching loss of the power devices and achieving lower conduction loss of the power devices; and because the silicon-based power devices and silicon carbide power devices are integrated in parallel inside the motor driver chip, the power loop and parasitic inductance are reduced, thereby reducing circuit losses, improving circuit efficiency and being less susceptible to interference signals; it can also avoid high voltage spikes caused by parasitic inductance from breaking down power devices and damaging other devices, thereby increasing the service life of power devices and motor driver chips.
[0025] In some embodiments of the present application, the number of the drive circuits is three, and the three drive circuits are respectively connected to the three-phase coils of the motor.
[0026] The above technical solution has the following advantages or beneficial effects: by arranging three drive circuits on one motor drive chip, the chip integration is further improved, the loop area is reduced, thereby improving the circuit efficiency and reducing the influence of parasitic parameters on high-frequency switching.
[0027] In some embodiments of the present application, the input end of the motor driving chip is used to connect to the output end of the motor control circuit, the logic control circuit has a first input end, and the motor driving chip further includes:
[0028] An isolation control circuit is used to electrically isolate the motor control circuit from the motor drive chip, wherein the input end of the isolation control circuit is connected to the output end of the motor control circuit, and the output end of the isolation control circuit is connected to the first input end of the logic control circuit.
[0029] The above technical solution has the following advantages or beneficial effects: by isolating the control circuit, the motor control circuit can be electrically isolated from the motor driver chip, so that the motor control circuit is isolated from the high voltage inside the motor driver chip, thereby effectively protecting the motor control circuit.
[0030] In some embodiments of the present application, the logic control circuit has a second input terminal, and the motor drive chip further includes:
[0031] The thermal shutdown circuit is used to shut down the motor driver chip when it is detected that the temperature of the motor driver chip is higher than a preset temperature threshold, and the output end of the thermal shutdown circuit is connected to the second input end of the logic control circuit.
[0032] The above technical solution has the following advantages or beneficial effects: the temperature of the motor driver chip can be monitored by the thermal shutdown circuit, and the motor driver chip can be shut down when the temperature is too high, thereby effectively protecting the motor driver chip.
[0033] In some embodiments of the present application, the logic control circuit further has a second output terminal, the drive circuit further has a second input terminal; the motor drive chip further includes:
[0034] A charge pump circuit, wherein the input end of the charge pump circuit is connected to the second output end of the logic control circuit, the output end of the charge pump circuit is connected to the second input end of the drive circuit, and the charge pump circuit is used to boost the drive voltage signal output by the power device drive circuit to drive the first silicon-based power device and the first silicon carbide power device.
[0035] The above technical solution has the following advantages or beneficial effects: through the charge pump, the voltage signal output by the logic control circuit can be increased, thereby meeting the driving voltage requirements of the power device and realizing effective driving of the upper bridge of each bridge branch in the driving circuit.
[0036] According to a third aspect of the present application, a motor control device is provided, comprising:
[0037] The motor driver chip described in any one of the second aspects;
[0038] A motor control circuit, wherein the output end of the motor control circuit is connected to the input end of the motor drive chip.
[0039] The above technical solution has the following advantages or beneficial effects: since the motor control device includes the above motor drive chip, the switching loss of the power device can be reduced, and the lower conduction loss of the power device can be achieved, thereby increasing the service life of the power device and the motor drive device.
[0040] According to a fourth aspect of the present application, there is provided an electric device, comprising: a motor and the motor control device described in the third aspect.
[0041] The above technical solution has the following advantages or beneficial effects: the electric equipment includes the above motor control device, thereby reducing the switching loss of the power device and achieving lower conduction loss of the power device, thereby increasing the service life of the power device and the electric equipment.
[0042] The driving circuit of the present application drives the silicon carbide power device to conduct in the turn-on phase and the turn-off phase of the power device unit respectively, and drives the silicon-based power device to conduct in the conduction phase of the power device unit, thereby utilizing the advantage of the small switching loss of the silicon carbide power device to reduce the switching loss of the power device; utilizing the advantage of the small conduction loss of the silicon-based power device to achieve lower conduction loss of the power device, thereby increasing the service life of the power device and the driving circuit. BRIEF DESCRIPTION OF THE DRAWINGS
[0043] The above and other purposes, features and advantages of the present invention will become more apparent by describing the embodiments of the present invention in more detail in conjunction with the accompanying drawings. The accompanying drawings are used to provide a further understanding of the embodiments of the present invention and constitute a part of the specification. Together with the embodiments of the present invention, they are used to explain the present invention and do not constitute a limitation of the present invention. In the accompanying drawings, the same reference numerals generally represent the same components or steps.
[0044] Figure 1 is a schematic block diagram of a drive circuit of a brushless DC motor;
[0045] Figure 2is a schematic block diagram of a driving circuit according to some embodiments of the present application;
[0046] Figure 3 is a schematic block diagram of a driving circuit according to some other embodiments of the present application;
[0047] Figure 4 is a schematic block diagram of a motor driver chip according to some embodiments of the present application;
[0048] Figure 5 is a schematic block diagram of a motor driving chip according to some other embodiments of the present application;
[0049] Figure 6 is a schematic block diagram of a motor control device according to some embodiments of the present application;
[0050] Figure 7 is a schematic block diagram of an electric device according to some embodiments of the present application. DETAILED DESCRIPTION
[0051] In order to make the purpose, technical scheme and advantages of the present invention more obvious, the exemplary embodiments according to the present invention will be described in detail with reference to the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments of the present invention, and it should be understood that the present invention is not limited to the exemplary embodiments described herein. Based on the embodiments of the present invention described in the present invention, all other embodiments obtained by those skilled in the art without creative work should fall within the protection scope of the present invention.
[0052] In order to solve the problem that the switching loss of IGBT in the existing motor drive circuit is large, causing the device to heat up and damage the device, the present application proposes a drive circuit, a motor drive chip, a motor control device and an electric device, which are described in detail below.
[0053] First, refer to Figure 2 To describe the driving circuit according to some embodiments of the present application.
[0054] like Figure 2 As shown, the driving circuit includes a power device unit and a power device driving circuit 200 .
[0055] The driving circuit includes: a first silicon-based power device 111, a second silicon-based power device 112, a first silicon carbide power device 121 and a second silicon carbide power device 122. The first silicon carbide power device 121 is connected in parallel with the first silicon-based power device 111, the second silicon carbide power device 122 is connected in parallel with the second silicon-based power device 112, and is connected in series with the parallel-connected first silicon carbide power device 121 and the first silicon-based power device 111.
[0056] The power device driving circuit 200 has a plurality of output terminals, and the control terminals of the first silicon-based power device 111, the second silicon-based power device 112, the first silicon carbide power device 121, and the second silicon carbide power device 122 are respectively connected to an output terminal of the power device driving circuit 200. The power device driving circuit 200 is used to output a driving signal in a time-sharing manner under the control of a control signal to drive a power device in a power device unit to be in a conducting state.
[0057] Specifically, when the power device unit serves as an output loop of a power signal, the first silicon carbide power device 121 is driven to be turned on in the turn-on phase and the turn-off phase of the power device unit, and the first silicon-based power device 111 is driven to be turned on in the turn-on phase of the power device unit; when the power device unit serves as an input loop of a power signal, the second silicon carbide power device 122 is driven to be turned on in the turn-on phase and the turn-off phase of the power device unit, and the second silicon-based power device 112 is driven to be turned on in the turn-on phase of the power device unit.
[0058] In the present application, the low switching loss of silicon carbide power devices and the low conduction loss of silicon-based power devices are utilized, and the silicon carbide power devices are driven during the turn-on and turn-off stages of the power device unit. The silicon carbide power devices are turned on and off during the conduction stage of the power device unit and the silicon-based power devices are made to conduct at a low level, thereby reducing the switching loss and conduction loss of the driving circuit.
[0059] The driving circuit of the present application can be applied to any device or apparatus that requires current drive, and the device or apparatus can be any electronic product or apparatus such as household appliances (such as variable frequency air conditioners), cameras, electric vehicles, etc. The driving circuit can be set independently or integrated with other circuit modules, and the present application does not make specific restrictions on this.
[0060] It should be noted that Figure 2 The components and structures of the driving circuit shown are merely exemplary and non-limiting. The driving circuit may also have other components and structures as required.
[0061] In the present application, the first silicon-based power device and the second silicon-based power device may be IGBT, silicon-based metal-oxide semiconductor field-effect transistor (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET), etc. The first silicon carbide power device and the second silicon carbide power device may be silicon carbide (SiC) MOSFET, silicon carbide junction field-effect transistor (Junction Field-Effect Transistor, JFET), etc.
[0062] In some embodiments of the present application, a first silicon-based power device, a second silicon-based power device, a first silicon carbide power device, and a second silicon carbide power device respectively have a first end and a second end, the first end of the first silicon-based power device and the first end of the first silicon carbide power device are both connected to a circuit power supply, the second end of the second silicon-based power device and the second end of the second silicon carbide power device are grounded, and the second end of the first silicon-based power device, the second end of the first silicon carbide power device, the first end of the second silicon-based power device, and the first end of the second silicon carbide power device are all connected to the output end of the driving circuit.
[0063] When the power device unit is used as the output loop of the power signal, first, in the turn-on phase of the power device unit, the first silicon carbide power device is driven to turn on, and the current is output from the power supply through the first silicon carbide power device to the load of the drive circuit. Since the silicon carbide power device has the characteristic of fast switching speed, the turn-on loss can be reduced. Then, in the turn-on phase of the power device unit, the first silicon-based power device is driven to turn on and the first silicon carbide power device is turned off, and the current is output from the power supply through the first silicon-based power device to the load of the drive circuit. Since the silicon carbide power device has an on-resistance, there is a large conduction loss when the current is large. Therefore, after the first silicon carbide power device is turned on, the power device driving circuit controls the first silicon-based power device to turn on and then controls the first silicon carbide power device to turn off, thereby reducing the conduction loss. Finally, in the turn-off phase of the power device unit, the first silicon carbide power device is driven to turn on and the first silicon-based power device is turned off. Since the silicon carbide power device has the characteristic of fast switching speed, the turn-off loss can be reduced.
[0064] When the power device unit is used as the input circuit of the power signal, the second silicon carbide power device is driven to conduct in the turn-on phase and the turn-off phase of the power device unit, and the second silicon-based power device is driven to conduct in the turn-on phase of the power device unit. The specific process is similar to the power device unit as the output circuit of the power signal, and will not be described in detail; only the direction of current flow is opposite, that is, when the power device unit is used as the input circuit of the power signal, the current flows from the load of the driving circuit through the power device into the ground terminal.
[0065] Next, refer to Figure 3 To describe the driving circuit according to some embodiments of the present application.
[0066] like Figure 3As shown, in this embodiment, the silicon-based power device is an IGBT, specifically including a first power device Q1 and a second power device Q2; the silicon carbide power device is a MOS tube, specifically including a third power device Q3 and a fourth power device Q4. The first power device Q1 and the third power device Q3 are connected in parallel, and the first ends of the first power device Q1 and the third power device Q3 are both connected to the power bus VBUS, the second power device Q2 and the fourth power device Q4 are connected in parallel, and the second ends of the second power device Q2 and the fourth power device Q4 are grounded. The third power device Q3 and the fourth power device Q4 are connected in parallel with a diode.
[0067] In this embodiment, the driving circuit further includes an overcurrent protection circuit, which has a plurality of input terminals, each of which is connected to one of the second terminals of the first power device Q1 and the third power device Q3, and the first terminals of the second power device Q2 and the fourth power device Q4, and the output terminal of the overcurrent protection circuit is connected to the overcurrent protection signal input terminal of the power device driving circuit. The overcurrent protection circuit is used to generate an overcurrent protection signal when the current flowing through the power device unit is greater than a preset current threshold.
[0068] The overcurrent protection circuit may include a current detection circuit and a comparator. The current detection circuit is used to detect the current flowing through the power device and output a current detection signal. The comparator is used to generate an overcurrent protection signal based on comparing the current detection signal with a preset current threshold.
[0069] The control ends of the first power device Q1, the second power device Q2, the third power device Q3 and the fourth power device Q4 are respectively connected to the output ends of the power device driving circuit, so that the power device driving circuit can drive the first power device Q1, the second power device Q2, the third power device Q3 and the fourth power device Q4 to turn on and off in a time-sharing manner under the protection of the overcurrent protection circuit.
[0070] Specifically, the third power device Q3 and the fourth power device Q4 are NMOS tubes, the control end of the third power device Q3 and the fourth power device Q4 is the gate of the NMOS tube, the second end is the source, and the first end is the drain. The first power device Q1 and the second power device Q2 are N-channel tube IGBTs, the control end of the first power device Q1 and the second power device Q2 is the gate, the first end is the collector, and the second end is the emitter.
[0071] On the other hand, the present application Figure 4 As shown, a motor driving chip 400 is also provided, comprising a logic control circuit 410 and a driving circuit 420 as in any of the above embodiments. The logic control circuit 410 is used to generate a control signal for controlling at least one driving circuit 420.
[0072] In the present application, the logic control circuit 410 has at least one first output terminal, and the driving circuit 420 has a first input terminal; each first output terminal of the logic control circuit 410 is correspondingly connected to a first input terminal of the driving circuit.
[0073] There can be multiple driving circuits 420, which are driving circuit 1, driving circuit 2, ..., driving circuit N, where N is the number of driving circuits and is a positive integer greater than or equal to 1.
[0074] In the present application, the logic control circuit 410 is a control circuit with digital processing capability. Specifically, the control circuit may be a circuit composed of discrete components or an integrated circuit.
[0075] When an integrated circuit is used, the logic control circuit 410 may be a controller. The controller may be any controller commonly used by those skilled in the art, such as a single chip microcomputer controller, a micro control unit, and a programmable logic controller.
[0076] The motor driver chip of the present application integrates silicon-based power devices and silicon carbide power devices. The low switching loss of silicon carbide power devices and the low conduction loss of silicon-based power devices are utilized to make the chip have a low-power structure, thereby optimizing the chip structure, reducing the switching loss of the power devices therein and achieving lower conduction loss of the power devices. Furthermore, since the silicon-based power devices and silicon carbide power devices are integrated in parallel inside the motor driver chip, the power loop and parasitic inductance are reduced, thereby reducing circuit loss, improving circuit efficiency and being less susceptible to interference signals. It can also prevent high voltage spikes caused by parasitic inductance from breaking down power devices and damaging other devices, thereby increasing the service life of power devices and motor driver chips.
[0077] Next, refer to Figure 5 To describe the motor driver chip according to some embodiments of the present application.
[0078] like Figure 5 As shown, there are three drive circuits, the motor connected to the motor drive chip is a three-phase Y-type DC brushless motor, and the three drive circuits are respectively connected to the three-phase coils L1, L2 and L2 of the motor. The input end of the logic control circuit can be connected to the motor control circuit, so that the motor control circuit can drive the motor to rotate by controlling the motor drive chip.
[0079] The driving circuit 1 includes a first power device driving circuit, a first overcurrent protection circuit, an eleventh field effect transistor Q11, a twelfth field effect transistor Q12, a twenty-first insulated gate bipolar transistor Q21, and a twenty-second insulated gate bipolar transistor Q22.
[0080] The driving circuit 2 includes a second power device driving circuit, a second overcurrent protection circuit, a thirteenth field effect transistor Q13, a fourteenth field effect transistor Q14, a twenty-third insulated gate bipolar transistor Q23, and a twenty-fourth insulated gate bipolar transistor Q24.
[0081] The driving circuit 3 includes a third power device driving circuit, a third overcurrent protection circuit, a fifteenth field effect transistor Q15, a sixteenth field effect transistor Q16, a twenty-fifth insulated gate bipolar transistor Q25, and a twenty-sixth insulated gate bipolar transistor Q26.
[0082] Wherein, each of the above field effect transistors is connected in parallel with a diode.
[0083] Field effect transistors Q11 to Q16 and insulated gate bipolar transistors Q21 to Q26 constitute three bridge branches, which are arranged in parallel, and each of the three bridge branches includes: an upper bridge and a lower bridge; in each bridge branch, the first end of the upper bridge is connected to the power bus VBUS, the second end of the upper bridge is connected to the first end of the lower bridge, and the second connection end of the lower bridge is grounded; specifically, the second connection ends of all the lower bridges in the three bridge branches are connected and then grounded.
[0084] The field effect transistors Q11 to Q16 and the insulated gate bipolar transistors Q21 to Q26 are selectively turned on and off by control signals, such as pulse width modulation signals, from a power device control circuit.
[0085] Please continue reading Figure 5 In some embodiments of the present application, the input end of the motor driver chip is used to connect to the output end of the motor control circuit (not shown in the figure), the logic control circuit has a first input end, and the motor driver chip further includes:
[0086] The isolation control circuit is used to electrically isolate the motor control circuit from the motor drive chip, the input end of the isolation control circuit is connected to the output end of the motor control circuit, and the output end of the isolation control circuit is connected to the first input end of the logic control circuit.
[0087] The motor control circuit sends out a control signal, which is processed by the logic control circuit after being isolated inside the motor driver chip. Then the power device drive circuit drives the field effect transistors Q11~Q16 and the insulated gate bipolar transistors Q21~Q26 respectively to control the motor to rotate according to the target requirements.
[0088] Since the motor driver chip has an isolation function, the motor control circuit can be isolated from the high voltage inside the motor control chip, thereby protecting the motor control circuit.
[0089] Specifically, the isolation control circuit may adopt one or more of optocoupler isolation, magnetic coupling isolation and capacitive isolation.
[0090] When optocoupler isolation is used, light-emitting diodes and phototransistors can be used to achieve electrical isolation. When capacitive isolation is used, capacitors can be used to isolate circuits.
[0091] Please continue reading Figure 5 In some embodiments of the present application, the logic control circuit has a second input terminal, and the motor drive chip further includes:
[0092] The thermal shutdown circuit is used to shut down the motor driver chip when it is detected that the temperature of the motor driver chip is higher than a preset temperature threshold. The output end of the thermal shutdown circuit is connected to the second input end of the logic control circuit.
[0093] Specifically, the thermal shutdown circuit may include a temperature acquisition circuit and a comparator, wherein the temperature acquisition circuit is used to acquire the ambient temperature of the motor drive chip to obtain a temperature acquisition signal, and the comparator is used to compare the detected temperature with a preset temperature threshold.
[0094] When the chip temperature is higher than the preset temperature threshold, the comparator outputs a signal, so that the thermal shutdown circuit can trigger the logic control circuit to shut down the chip, protecting the chip from damage, thereby extending the service life of the chip. In addition, the thermal shutdown circuit can also improve the reliability and safety of the system and avoid system failures caused by high temperature.
[0095] Please continue reading Figure 5 In some embodiments of the present application, the logic control circuit further has a second output terminal, and the drive circuit further has a second input terminal; the motor drive chip further includes:
[0096] A charge pump circuit is used to boost the driving voltage signal output by the power device driving circuit to drive the first silicon-based power device and the first silicon carbide power device; the input end of the charge pump circuit is connected to the second output end of the logic control circuit, and the output end of the charge pump circuit is connected to the second input end of the driving circuit.
[0097] The charge pump is a prior art, so the specific structure of the charge pump circuit is not described in detail in this embodiment.
[0098] The charge pump can boost the driving voltage signal output by the logic control circuit to meet the driving voltage requirements of silicon-based power devices and silicon carbide power devices, and achieve effective driving of the upper bridge of each bridge branch in the driving circuit.
[0099] On the other hand, the present application Figure 6As shown, a motor control device 600 is also provided, including a motor control circuit 610 and a motor driving chip 620 as in any of the above embodiments, wherein the input end of the motor driving chip 620 is connected to the output end of the motor control circuit 610 .
[0100] In the present application, the motor control circuit 610 may adopt various controllers commonly used by those skilled in the art, such as a single-chip microcomputer controller, a microcontroller unit, and a programmable logic controller.
[0101] The motor control circuit 610 controls the motor driving chip to control the motor rotation.
[0102] The motor control device of the present application adopts the motor driver chip 620 of any of the above embodiments, thereby reducing the switching loss of the power device in the motor driver chip 620 and achieving lower conduction loss, thereby increasing the service life of the power device and the motor driver.
[0103] On the other hand, the present application Figure 7 As shown, an electric device 700 is also provided, including: a motor control device 710 and a motor 720 as in any of the above embodiments.
[0104] The electric device 700 of the present application adopts the motor control device 710 of any of the above embodiments, thereby reducing the switching loss of the power device in the motor control device 710 and achieving lower conduction loss, thereby increasing the service life of the power device and the motor.
[0105] Although example embodiments have been described herein with reference to the accompanying drawings, it should be understood that the above example embodiments are merely exemplary and are not intended to limit the scope of the present invention thereto. Various changes and modifications may be made therein by one of ordinary skill in the art without departing from the scope and spirit of the present invention. All such changes and modifications are intended to be included within the scope of the present invention as required by the appended claims.
[0106] Those skilled in the art will appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of the present invention.
[0107] In the several embodiments provided in this application, it should be understood that the disclosed devices and methods can be implemented in other ways. For example, the device embodiments described above are only schematic, for example, the division of units is only a logical function division, and there may be other division methods in actual implementation, such as multiple units or components can be combined or integrated into another device, or some features can be ignored or not executed.
[0108] In the description provided herein, a large number of specific details are described. However, it is understood that embodiments of the present invention can be practiced without these specific details. In some instances, well-known methods, structures and techniques are not shown in detail so as not to obscure the understanding of this description.
[0109] Similarly, it should be understood that in order to streamline the present invention and help understand one or more of the various inventive aspects, in the description of the exemplary embodiments of the present invention, the various features of the present invention are sometimes grouped together into a single embodiment, figure, or description thereof. However, the method of the present invention should not be interpreted as reflecting the following intention: the claimed invention requires more features than the features explicitly stated in each claim. More specifically, as reflected in the corresponding claims, the inventive point is that the corresponding technical problem can be solved with less than all the features of a single disclosed embodiment. Therefore, the claims following the specific embodiment are hereby expressly incorporated into the specific embodiment, wherein each claim itself serves as a separate embodiment of the present invention.
[0110] It will be understood by those skilled in the art that, except for mutually exclusive features, all features disclosed in this specification (including the accompanying claims, abstracts and drawings) and all processes or units of any method or device disclosed in this specification may be combined in any combination. Unless otherwise expressly stated, each feature disclosed in this specification (including the accompanying claims, abstracts and drawings) may be replaced by an alternative feature that provides the same, equivalent or similar purpose.
[0111] In addition, those skilled in the art will appreciate that, although some embodiments described herein include certain features included in other embodiments but not other features, the combination of features of different embodiments is meant to be within the scope of the present invention and form different embodiments. For example, in the claims, any one of the claimed embodiments may be used in any combination.
[0112] The various component embodiments of the present invention may be implemented in hardware, or in software modules running on one or more processors, or in a combination thereof. It should be understood by those skilled in the art that a microprocessor or digital signal processor (DSP) may be used in practice to implement some or all of the functions of some modules in the article analysis device according to an embodiment of the present invention. The present invention may also be implemented as a device program (e.g., a computer program and a computer program product) for executing part or all of the methods described herein. Such a program implementing the present invention may be stored on a computer-readable medium, or may be in the form of one or more signals. Such a signal may be downloaded from an Internet website, or provided on a carrier signal, or provided in any other form.
[0113] It should be noted that the above embodiments illustrate the present invention rather than limit it, and that those skilled in the art may devise alternative embodiments without departing from the scope of the appended claims. In the claims, any reference symbol between brackets shall not be construed as a limitation on the claims. The word "comprising" does not exclude the presence of elements or steps not listed in the claims. The word "one" or "an" preceding an element does not exclude the presence of a plurality of such elements. The present invention may be implemented by means of hardware comprising a number of different elements and by means of a suitably programmed computer. In a unit claim enumerating a number of devices, several of these devices may be embodied by the same hardware item. The use of the words first, second, and third, etc., does not indicate any order. These words may be interpreted as names.
[0114] The above is only a specific embodiment of the present invention or an explanation of a specific embodiment, and the protection scope of the present invention is not limited thereto. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed by the present invention, which should be included in the protection scope of the present invention. The protection scope of the present invention shall be based on the protection scope of the claims.
Claims
1. A driving circuit, characterized in that: The driving circuit comprises: Power device unit, including: The first silicon-based power device; A first silicon carbide power device, wherein the first silicon carbide power device is connected in parallel with the first silicon-based power device; The second silicon-based power device; A second silicon carbide power device, the second silicon carbide power device is connected in parallel with the second silicon-based power device, and is connected in series with the first silicon carbide power device and the first silicon-based power device that are connected in parallel; A power device driving circuit, wherein the power device driving circuit has a plurality of output terminals, wherein the control terminals of the first silicon-based power device, the second silicon-based power device, the first silicon carbide power device, and the second silicon carbide power device are respectively connected to one of the output terminals, wherein the power device driving circuit is used for: When the power device unit is used as an output loop of a power signal, the first silicon carbide power device is driven to be turned on in the turn-on phase and the turn-off phase of the power device unit, and the first silicon-based power device is driven to be turned on in the turn-on phase of the power device unit; When the power device unit is used as an input loop of a power signal, the second silicon carbide power device is driven to be turned on in the turn-on phase and the turn-off phase of the power device unit, and the second silicon-based power device is driven to be turned on in the turn-on phase of the power device unit.
2. The driving circuit according to claim 1, characterized in that: The first silicon-based power device, the second silicon-based power device, the first silicon carbide power device and the second silicon carbide power device respectively have a first end and a second end, the first end of the first silicon-based power device and the first end of the first silicon carbide power device are both connected to a circuit power supply, the second end of the second silicon-based power device and the second end of the second silicon carbide power device are grounded, and the second end of the first silicon-based power device, the second end of the first silicon carbide power device, the first end of the second silicon-based power device, and the first end of the second silicon carbide power device are all connected to the output end of the drive circuit.
3. The driving circuit according to claim 1, wherein: The driving circuit further includes: An overcurrent protection circuit is used to generate an overcurrent protection signal when the current flowing through the power device unit is greater than a preset current threshold; the overcurrent protection circuit has multiple input terminals, each input terminal is correspondingly connected to the second terminal of the first silicon-based power device, the second terminal of the first silicon carbide power device, the first terminal of the second silicon-based power device, and the first terminal of the second silicon carbide power device, and the output terminal of the overcurrent protection circuit is connected to the overcurrent protection signal input terminal of the power device driving circuit.
4. A motor driver chip, characterized in that: include: At least one drive circuit according to any one of claims 1 to 3, the drive circuit having a first input terminal; The logic control circuit is used to generate a control signal for controlling at least one of the driving circuits. The logic control circuit has at least one first output terminal, and each of the first output terminals is connected to a corresponding first input terminal of the driving circuit.
5. The motor driving chip according to claim 4, characterized in that: The number of the drive circuits is three, and the three drive circuits are respectively connected to the three-phase coils of the motor.
6. The motor driving chip according to claim 4 or 5, characterized in that: The input end of the motor driving chip is used to connect to the output end of the motor control circuit, the logic control circuit has a first input end, and the motor driving chip also includes: An isolation control circuit is used to electrically isolate the motor control circuit from the motor drive chip, wherein the input end of the isolation control circuit is connected to the output end of the motor control circuit, and the output end of the isolation control circuit is connected to the first input end of the logic control circuit.
7. The motor driving chip according to claim 4 or 5, characterized in that: The logic control circuit has a second input terminal, and the motor drive chip further includes: The thermal shutdown circuit is used to shut down the motor driver chip when it is detected that the temperature of the motor driver chip is higher than a preset temperature threshold, and the output end of the thermal shutdown circuit is connected to the second input end of the logic control circuit.
8. The motor driving chip according to claim 4 or 5, characterized in that: The logic control circuit further has a second output terminal, and the drive circuit further has a second input terminal; the motor drive chip further includes: A charge pump circuit, wherein the input end of the charge pump circuit is connected to the second output end of the logic control circuit, the output end of the charge pump circuit is connected to the second input end of the drive circuit, and the charge pump circuit is used to boost the drive voltage signal output by the power device drive circuit to drive the first silicon-based power device and the first silicon carbide power device.
9. A motor control device, characterized in that: include: The motor driver chip according to any one of claims 4 to 8; A motor control circuit, wherein the output end of the motor control circuit is connected to the input end of the motor drive chip.
10. An electric device, characterized in that: include: A motor and a motor control device as claimed in claim 9.
Citation Information
Patent Citations
Driving circuit and driving circuit board
CN106301316A
Switching circuit, power integration module and vehicle
CN117977992A
Transistor drive circuit and motor drive control apparatus
US20190363706A1
Cited By
Control method and product of parallel circuit of silicon switching device and silicon carbide switching device
CN119814013A