Double-sided patterning method for hemispherical resonance plate electrode and plate electrode

Abstract

The invention provides a double-sided patterning method for a hemispherical resonance plate electrode and a plate electrode, and the method comprises the steps: clamping the side surface of an electrode body by adopting an annular clamp with grids, placing the electrode body in a film plating machine, and plating metal films on the front and back surfaces of the electrode body, meanwhile, the side face of the electrode body is plated with a grid metal strip film by adjusting the magnetron sputtering angle and the grid-shaped clamp; the metal films on the front and back surfaces of the electrode body are communicated through the grid metal strip films on the side surfaces; spraying glue on the surface of the coated electrode; the electrode is placed on a suction cup of a photoetching machine, the T-shaped mark on the suction cup is aligned with the grid metal strip on the side face of the electrode, and first alignment is completed; pushing the suction cup into the photoetching machine, and aligning the T-shaped mark on the mask with the T-shaped mark on the suction cup to complete secondary alignment; and developing and corroding to finish the double-sided patterning for the hemispherical resonance plate electrode. According to the technical scheme, an original porous electrode scheme needing a pin cap lead can be simplified.

Description

Technical Field

[0001] The invention belongs to the technical field of resonant flat plate electrode manufacturing, and in particular relates to a double-sided patterning method for a hemispherical resonant flat plate electrode and a flat plate electrode. Background Art

[0002] Hemispherical resonator gyroscopes have many significant advantages such as high precision, small size and low cost, and have attracted extensive attention from many researchers in recent years. As the core component of the hemispherical resonator gyroscope, the plate electrode is generally made of quartz glass with precision processing. In order to achieve the requirements of capacitive excitation and detection feedback of the state of the hemispherical resonator, a metal film layer needs to be plated on the surface of the plate electrode body, and then the required electrode structure morphology is formed by patterning the film layer.

[0003] The existing flat plate electrode is made of quartz glass cut into discs, with a hole in the center of the disc to fix the oscillator and multiple tiny holes around it. The tiny holes can be inserted into the pin cap and connected to the metal electrical area on the electrode surface through gold wires to achieve electrical signal transmission. However, the tiny holes on the electrode bring many problems, including complex processing, particles hidden in the holes that are difficult to clean, and uneven structural stress. Summary of the invention

[0004] The present invention aims to solve at least one of the technical problems existing in the prior art.

[0005] According to one aspect of the present invention, a double-sided patterning method for a hemispherical resonant flat plate electrode is provided, the double-sided patterning method for a hemispherical resonant flat plate electrode comprising:

[0006] A ring-shaped fixture with a grid is used to clamp the side of the electrode body, and the electrode body is placed in a coating machine. A metal film is coated on the front and back sides of the electrode body. At the same time, a grid metal strip film is coated on the side of the electrode body by adjusting the magnetron sputtering angle and the grid-shaped fixture. The metal films on the front and back sides of the electrode body are connected through the grid metal strip film on the side.

[0007] Spray glue on the electrode surface after coating;

[0008] Place the electrode on the chuck of the photolithography machine, align the T-shaped mark on the chuck with the grid metal strip on the side of the electrode to complete the first alignment;

[0009] Push the suction cup into the lithography machine and align the T-mark on the mask with the T-mark on the suction cup to complete the second alignment;

[0010] Development and etching operations are performed to complete double-sided patterning for the hemispherical resonant flat plate electrode.

[0011] Furthermore, when spraying glue on the electrode surface, first spray glue on the front side of the electrode and then spray glue on the back side. By adjusting the spraying angle, glue is attached to the side of the electrode to protect the grid metal strip.

[0012] According to another aspect of the present invention, a hemispherical resonant flat plate electrode is provided. The hemispherical resonant flat plate electrode adopts the double-sided patterning method for a hemispherical resonant flat plate electrode as described above to achieve double-sided patterning of the electrode.

[0013] Furthermore, the outer diameter of the hemispherical resonant flat plate electrode is 16 mm to 30 mm, the inner diameter is 17 mm to 31 mm, and the thickness is 4 mm to 10 mm.

[0014] The technical solution of the present invention is applied to provide a double-sided patterning method and a flat plate electrode for a hemispherical resonant flat plate electrode. The method uses a ring-shaped clamp with a grid to clamp the side of the electrode body, so that the electrical area on the front side is connected to the corresponding electrical area on the back side through the side grid metal strip film to achieve the transmission of electrical signals; through two alignments, the pattern on the mask is transferred to the electrode more accurately, and at the same time, it is connected to the side grid metal strip. Finally, the electrode signal on the front side is connected to the corresponding electrical area on the back side of the electrode through the side grid metal strip, which greatly solves many problems caused by drilling fine holes in the electrode. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The included drawings are used to provide a further understanding of the embodiments of the present invention, which constitute a part of the specification, are used to illustrate the embodiments of the present invention, and together with the text description, explain the principles of the present invention. Obviously, the drawings in the following description are only some embodiments of the present invention, and for ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0016] Figure 1 A schematic diagram of a double-sided hemispherical resonant electrode provided in a specific embodiment of the present invention;

[0017] Figure 2 A front view schematic diagram of a double-sided hemispherical resonant electrode provided in a specific embodiment of the present invention;

[0018] Figure 3 A schematic diagram of a grid fixture provided in a specific embodiment of the present invention;

[0019] Figure 4 A schematic diagram of a suction cup provided for a specific embodiment of the present invention;

[0020] Figure 5 A schematic diagram of a front-side mask of a double-sided hemispherical resonant electrode provided in a specific embodiment of the present invention.

[0021] The above drawings include the following reference numerals:

[0022] 1. Electrode center hole; 2. Side grid metal strips; 3. Front metal pattern; 4. T-shaped mark on the suction cup; 5. T-shaped mark on the mask. DETAILED DESCRIPTION

[0023] It should be noted that, in the absence of conflict, the embodiments in this application and the features in the embodiments can be combined with each other. The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. The following description of at least one exemplary embodiment is actually only illustrative and is by no means intended to limit the present invention and its application or use. Based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0024] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, it indicates the presence of features, steps, operations, devices, components and / or combinations thereof.

[0025] Unless otherwise specifically stated, the relative arrangement, numerical expressions and numerical values ​​of the parts and steps set forth in these embodiments do not limit the scope of the present invention. Meanwhile, it should be understood that, for ease of description, the sizes of the various parts shown in the accompanying drawings are not drawn according to the actual proportional relationship. The technology, method and equipment known to those of ordinary skill in the relevant art may not be discussed in detail, but in appropriate cases, the technology, method and equipment should be considered as a part of the specification. In all examples shown and discussed here, any specific value should be interpreted as being merely exemplary, rather than as a limitation. Therefore, other examples of exemplary embodiments may have different values. It should be noted that similar reference numerals and letters represent similar items in the following drawings, and therefore, once a certain item is defined in an accompanying drawing, it does not need to be further discussed in subsequent drawings.

[0026] like Figures 1 to 5 As shown, according to a specific embodiment of the present invention, a double-sided patterning method for a hemispherical resonant flat plate electrode is provided, the method comprising:

[0027] A ring-shaped fixture with a grid is used to clamp the side of the electrode body, and the electrode body is placed in a coating machine. A metal film is coated on the front and back sides of the electrode body. At the same time, a grid metal strip film is coated on the side of the electrode body by adjusting the magnetron sputtering angle and the grid-shaped fixture. The metal films on the front and back sides of the electrode body are connected through the grid metal strip film on the side.

[0028] Spray glue on the electrode surface after coating;

[0029] Place the electrode on the chuck of the photolithography machine, align the T-shaped mark on the chuck with the grid metal strip on the side of the electrode to complete the first alignment;

[0030] Push the suction cup into the lithography machine and align the T-mark on the mask with the T-mark on the suction cup to complete the second alignment;

[0031] Development and etching operations are performed to complete double-sided patterning for the hemispherical resonant flat plate electrode.

[0032] By applying this configuration, a double-sided patterning method for hemispherical resonant flat-plate electrodes is provided. The method uses a ring fixture with a grid to clamp the side of the electrode body, so that the electrical area on the front side is connected to the corresponding electrical area on the back side through the side grid metal strip film to achieve the transmission of electrical signals; through two alignments, the pattern on the mask is transferred to the electrode more accurately, and at the same time, it is connected to the side grid metal strip. Finally, the electrode signal on the front side is connected to the corresponding electrical area on the back side of the electrode through the side grid metal strip, which greatly solves many problems caused by drilling fine holes in the electrode.

[0033] The electrode body of the present invention no longer processes tiny holes and uses pin cap gold wires to transmit signals. Instead, while the metal film is plated on the front and back sides of the electrode, a grid metal strip film is plated on the side of the electrode by adjusting the magnetron sputtering angle and the grid-shaped fixture. After the metal film layers on the front and back sides of the electrode are patterned, the electrical area of ​​the front metal pattern 3 is connected to the corresponding electrical area on the back side through the side grid metal strip film, thereby realizing the transmission of electrical signals.

[0034] Furthermore, when spraying glue on the electrode surface, the glue can be sprayed on the front side of the electrode first, and then on the back side. By adjusting the spraying angle, glue will also adhere to the side of the electrode to protect the grid metal strip.

[0035] like Figure 4 As shown, a T-shaped mark 4 corresponding to the side grid metal strip is arranged on the lithography machine suction cup; Figure 5 As shown, the mask is provided with a T-shaped mark 5 corresponding to the chuck of the photolithography machine, thereby enabling the pattern on the mask to be transferred to the electrode more accurately and to form a connection with the side grid metal strip.

[0036] The beneficial effects of the present invention compared with the prior art are as follows:

[0037] (1) Not drilling fine holes on the electrode body reduces the processing complexity of the flat electrode body and improves the yield rate of the flat electrode body.

[0038] (2) It solves many problems caused by having too many fine holes in the electrode body, including particles hidden in the holes that are difficult to clean, uneven structural stress, and complex processes.

[0039] According to another aspect of the present invention, a hemispherical resonant flat plate electrode is provided. The hemispherical resonant flat plate electrode adopts the double-sided patterning method for a hemispherical resonant flat plate electrode as described above to achieve double-sided patterning of the electrode.

[0040] As a specific embodiment of the present invention, the outer diameter of the hemispherical resonant flat plate electrode is 16 mm to 30 mm, the inner diameter is 17 mm to 31 mm, and the thickness is 4 mm to 10 mm.

[0041] like Figure 1 As shown, the hemispherical resonant flat plate electrode of the present invention has only a central hole 1, and a plurality of electrical regions on the front side are connected to corresponding electrical regions on the back side through side grid metal strips 2.

[0042] In order to further understand the present invention, the following Figures 1 to 5 The double-sided patterning method for a hemispherical resonant flat plate electrode of the present invention is described in detail.

[0043] The present invention provides a double-sided patterning method for a hemispherical resonant flat plate electrode, the method specifically comprising the following steps:

[0044] A ring-shaped fixture with a grid is used to clamp the side of the electrode body, and the electrode body is placed in a coating machine. A metal film is coated on the front and back sides of the electrode body. At the same time, a grid metal strip film is coated on the side of the electrode body by adjusting the magnetron sputtering angle and the grid-shaped fixture. The metal films on the front and back sides of the electrode body are connected through the grid metal strip film on the side.

[0045] Spray glue on the electrode surface after coating;

[0046] After the electrode glue spraying is completed, place the electrode on the suction cup of the photolithography machine, align the T-shaped mark on the suction cup with the grid metal strip on the side of the electrode to complete the first alignment;

[0047] Push the suction cup into the lithography machine and align the T-mark on the mask with the T-mark on the suction cup to complete the second alignment;

[0048] Development and etching operations are performed to complete double-sided patterning for the hemispherical resonant flat plate electrode.

[0049] In summary, the present invention provides a double-sided patterning method and a flat plate electrode for a hemispherical resonant flat plate electrode. The method uses a ring-shaped clamp with a grid to clamp the side of the electrode body, so that the electrical area on the front side is connected to the corresponding electrical area on the back side through the side grid metal strip film to achieve the transmission of electrical signals; through two alignments, the pattern on the mask is transferred to the electrode more accurately, and at the same time, it is connected to the side grid metal strip. Finally, the electrode signal on the front side is connected to the corresponding electrical area on the back side of the electrode through the side grid metal strip, which greatly solves many problems caused by drilling fine holes in the electrode.

[0050] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used here to describe the spatial positional relationship between a device or feature and other devices or features as shown in the figure. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figure. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" can include both "above" and "below". The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatially relative descriptions used here are interpreted accordingly.

[0051] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A double-sided patterning method for a hemispherical resonant flat plate electrode, characterized in that: The double-sided patterning method for a hemispherical resonant flat plate electrode comprises: A ring-shaped fixture with a grid is used to clamp the side of the electrode body, and the electrode body is placed in a coating machine. A metal film is coated on the front and back sides of the electrode body. At the same time, a grid metal strip film is coated on the side of the electrode body by adjusting the magnetron sputtering angle and the grid-shaped fixture. The metal films on the front and back sides of the electrode body are connected through the grid metal strip film on the side. Spray glue on the electrode surface after coating; Place the electrode on the chuck of the photolithography machine, align the T-shaped mark on the chuck with the grid metal strip on the side of the electrode to complete the first alignment; Push the suction cup into the lithography machine and align the T-mark on the mask with the T-mark on the suction cup to complete the second alignment; Development and etching operations are performed to complete double-sided patterning for the hemispherical resonant flat plate electrode.

2. The double-sided patterning method for a hemispherical resonant flat plate electrode according to claim 1, characterized in that: When spraying glue on the electrode surface, first spray glue on the front side of the electrode, and then spray glue on the back side. By adjusting the spraying angle, glue is attached to the side of the electrode to protect the grid metal strip.

3. A hemispherical resonant flat plate electrode, characterized in that: The hemispherical resonant flat plate electrode adopts the double-sided patterning method for hemispherical resonant flat plate electrode as claimed in claim 1 or 2 to achieve double-sided patterning of the electrode.

4. The hemispherical resonant flat plate electrode according to claim 3, characterized in that: The outer diameter of the hemispherical resonant flat plate electrode is 16 mm to 30 mm, the inner diameter is 17 mm to 31 mm, and the thickness is 4 mm to 10 mm.

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