Infrared emission chip structure and preparation method thereof

Abstract

The invention discloses an infrared emission chip structure and a preparation method thereof.The infrared emission chip structure comprises a semiconductor board, a keyboard matrix module, a code modulation module, a first infrared LED emission module, an intensity control assembly, a heat dissipation assembly and a heating assembly, and the intensity control assembly is arranged at the top of the semiconductor board; the heat dissipation assembly and the heating assembly are arranged at the top of the semiconductor plate; the intensity control assembly comprises an infrared intensity control module arranged at the top of the semiconductor plate, one side of the semiconductor plate is provided with an illumination sensing module, one side of the semiconductor plate is provided with a distance sensing module, and one side of the semiconductor plate is provided with a second infrared LED emission module. According to the invention, the intensity of the infrared light signal can be adjusted by the infrared emission chip structure according to the actual situation through the arranged intensity control assembly, so that the situation that the infrared emission chip structure wastes electric power is prevented, and the emission effect of the infrared emission chip structure on the infrared light signal is improved.

Description

Technical Field

[0001] The present invention relates to the field of infrared emission technology, and in particular to an infrared emission chip structure and a preparation method thereof. Background Art

[0002] Infrared emission chips are the core components of infrared application systems. According to the way infrared light is generated, they are divided into three categories, namely lasers, infrared light-emitting diodes, and infrared thermal emitters. Among them, infrared thermal emitters can be divided into two categories based on their structural differences, traditional body structure emitters and thin-film infrared emitters prepared based on MEMS technology. Infrared lasers can emit monochromatic infrared light and can be modulated at high speed, but they need to be configured with a refrigeration structure, and the semiconductor chip preparation process is complicated, so the application cost is relatively high; there is currently little research on mid- and far-infrared light-emitting diodes, the quantum efficiency of the device in the mid- and far-infrared bands is low, and the process preparation cost is high, resulting in weak luminous intensity, which is difficult to meet application requirements; traditional infrared thermal emitters, such as hot plates, hot rods, incandescent bulbs, etc., have a large heating structure, resulting in a high structural heat capacity, which limits their modulation rate.

[0003] For example, the patent application with application number CN202310887313.2 includes a silicon-based light-emitting film and a glass substrate; the glass substrate is provided with a cavity and is sealed with the silicon-based light-emitting film by anode bonding; the silicon-based light-emitting film also serves as a packaging film of the chip active structure to achieve chip self-packaging; the silicon-based light-emitting film includes a heating resistor and a temperature measuring resistor, an isolation silicon oxide layer, a silicon device layer, and an infrared radiation layer from bottom to top; the heating resistor and the temperature measuring resistor are arranged on the surface of the isolation silicon oxide layer and sealed in the cavity of the glass substrate, and are connected to the outside through buried electrode connection electrode pads, respectively, to achieve in-situ monitoring of the temperature of the silicon-based light-emitting film and avoid oxidation of the heating resistor and the temperature measuring resistor; the isolation silicon oxide layer is arranged on the surface of the silicon device layer, and the infrared radiation layer is placed on the other surface of the silicon device layer; an infrared reflection layer is provided on the back of the glass substrate and the bottom of the cavity, which is used to reflect the infrared light generated by the heating resistor back to the heating resistor.

[0004] The above-mentioned infrared transmitting chip and the infrared transmitting chip in the prior art cannot adjust the intensity of the infrared light signal when in use. If the intensity of the infrared light signal is strong, the power required by the infrared transmitting chip increases, resulting in power waste. If the intensity of the infrared light signal is weak, the infrared receiving chip cannot sense the weak infrared light signal in actual use, and the attenuation degree of the infrared light is large, so that the effective sensing range of the infrared receiving chip is also correspondingly limited. Therefore, it is urgent to design an infrared transmitting chip structure and its preparation method to solve the above problems. Summary of the invention

[0005] The object of the present invention is to provide an infrared emission chip structure and a preparation method thereof, so as to solve the above-mentioned deficiencies in the prior art.

[0006] In order to achieve the above object, the present invention provides the following technical solutions:

[0007] An infrared emission chip structure, comprising a semiconductor board, a keyboard matrix module, a coding modulation module, a first infrared LED emission module, an intensity control component, a heat dissipation component and a heating component, wherein the intensity control component is arranged on the top of the semiconductor board, the heat dissipation component is arranged on the top of the semiconductor board, and the heating component is arranged on the top of the semiconductor board;

[0008] The intensity control component includes an infrared intensity control module arranged on the top of the semiconductor board, a light sensing module is arranged on one side of the semiconductor board, a distance sensing module is arranged on one side of the semiconductor board, a second infrared LED emission module is arranged on one side of the semiconductor board, an annular plate is arranged on one side of the semiconductor board, and an optical filter plate is arranged on one side of the annular plate.

[0009] By setting up the intensity control component, the infrared emission chip structure can adjust the intensity of the infrared light signal according to the actual situation, thereby preventing the infrared emission chip structure from wasting electricity, thereby increasing the emission effect of the infrared emission chip structure on the infrared light signal.

[0010] The infrared intensity control module is set up to start the second infrared LED emission module according to the information provided by the light sensing module and the distance sensing module, so that the infrared emission chip structure increases the intensity of the infrared light signal.

[0011] The light sensing module is configured to sense the light intensity of the infrared emitting chip structure, so that the infrared intensity control module determines the number of second infrared LED emitting modules that need to be activated.

[0012] The distance sensing module is set up to sense the distance of the infrared receiving chip, so that the infrared intensity control module can determine the attenuation degree of the infrared light it needs.

[0013] The optical filter plate is arranged to absorb or reflect light of a specific wavelength, thereby reducing the interference of light on the use of the second infrared LED emission module.

[0014] Preferably, the semiconductor board comprises a substrate layer, a protection layer, a metal line layer, a dielectric layer and a passivation layer, and the protection layer is arranged on top of the substrate layer.

[0015] Preferably, a notch is opened on one side of the protective layer, the metal wire layer is arranged in the notch, the dielectric layer is arranged on the top of the protective layer, and the passivation layer is arranged on the top of the dielectric layer.

[0016] Preferably, the keyboard matrix module is arranged on one side of the protective layer, the coding modulation module is arranged on the top of the passivation layer, and the first infrared LED emission module is arranged on one side of the protective layer.

[0017] Preferably, the heating assembly comprises a temperature measuring module, a temperature controlling module and a heating module, and the temperature measuring module is arranged on the top of the passivation layer.

[0018] Preferably, the temperature control module is arranged on the top of the passivation layer, and the heating module is arranged on the top of the passivation layer.

[0019] Preferably, the heat dissipation assembly comprises a first annular heat dissipation layer, a second annular heat dissipation layer, an aluminum hydroxide layer, a magnesium hydroxide layer, a copper heat dissipation layer, a boron nitride heat dissipation layer and an aluminum oxide heat dissipation layer, and the first annular heat dissipation layer is arranged on top of the passivation layer.

[0020] Preferably, the aluminum hydroxide layer is arranged on top of the first annular heat dissipation layer, the magnesium hydroxide layer is arranged on top of the aluminum hydroxide layer, the copper heat dissipation layer is arranged on top of the magnesium hydroxide layer, the boron nitride heat dissipation layer is arranged on top of the copper heat dissipation layer, and the aluminum oxide heat dissipation layer is arranged on top of the boron nitride heat dissipation layer.

[0021] Preferably, a groove is provided between the aluminum hydroxide layer and the aluminum oxide heat dissipation layer, and the second annular heat dissipation layer is arranged in the groove.

[0022] A method for preparing an infrared emission chip structure, comprising the infrared emission chip structure, further comprising the following steps:

[0023] S1: First, the raw materials of various glass components are mixed evenly according to the proportion, and put into a melting furnace at 1200-1400℃ to melt the glass to form molten glass; secondly, the molten glass is homogenized to eliminate bubbles in the glass;

[0024] S2: pouring or leaking the homogenized molten glass into the optical filter plate mold to form it, and then placing the molded body into an annealing furnace for annealing after the optical filter plate is formed.

[0025] S3: keeping the optical filter plate molded body at 550-700° C. for 24-72 hours to allow the optical filter plate molded body to undergo a nucleation reaction, and finally raising the temperature to 550-700° C. and keeping the temperature for 12-72 hours to allow crystals in the optical filter plate molded body to grow, thereby obtaining an optical filter plate;

[0026] S4: heating and dissolving the aluminum oxide in the bauxite with a sodium hydroxide solution to obtain a sodium aluminate solution. After separating the sodium aluminate solution from the residue, cooling it, adding aluminum hydroxide as a seed crystal, and stirring for a long time, the sodium aluminate decomposes and precipitates an aluminum hydroxide flame retardant, and the aluminum hydroxide flame retardant is made into an aluminum hydroxide layer;

[0027] S5: First, prepare 50% magnesium chloride solution and 20% sodium hydroxide solution according to MgCl2:NaOH=1, stir and mix for 5 minutes, then pour into a 1000mL autoclave, heat to 180°C and stir for 8 hours. Then, cool quickly, wash with distilled water, filter for several times, dry the obtained paste at (1055)°C to obtain white magnesium hydroxide powder, and make the white magnesium hydroxide powder into magnesium hydroxide layer.

[0028] In the above technical solution, the present invention provides an infrared emission chip structure and a preparation method thereof, and the beneficial effects are:

[0029] 1. By setting the intensity control component, the infrared emission chip structure can adjust the intensity of the infrared light signal according to the actual situation, thereby preventing the infrared emission chip structure from wasting electricity, thereby increasing the emission effect of the infrared emission chip structure on the infrared light signal.

[0030] 2. The infrared intensity control module can start the second infrared LED emission module according to the information provided by the light sensing module and the distance sensing module, so that the infrared emission chip structure increases the intensity of the infrared light signal.

[0031] 3. The optical filter plate can absorb or reflect light of a specific wavelength, thereby reducing the interference of light on the use of the second infrared LED emission module. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the present invention. For ordinary technicians in this field, other drawings can also be obtained based on these drawings.

[0033] Figure 1 A schematic diagram of an infrared emission chip structure provided in accordance with an embodiment of an infrared emission chip structure and a method for preparing the same according to the present invention.

[0034] Figure 2 A schematic diagram of the heat dissipation component structure provided in an embodiment of an infrared emission chip structure and a preparation method thereof of the present invention.

[0035] Figure 3A schematic diagram of the intensity control component structure provided in an embodiment of an infrared emission chip structure and a preparation method thereof of the present invention.

[0036] Figure 4 A schematic diagram of a semiconductor board structure provided in an embodiment of an infrared emission chip structure and a method for preparing the same according to the present invention.

[0037] Figure 5 A flow chart is provided for an embodiment of an infrared emission chip structure and a method for preparing the same according to the present invention.

[0038] Description of reference numerals:

[0039] 1. Semiconductor board; 2. Keyboard matrix module; 3. Coding modulation module; 4. First infrared LED emission module; 5. Intensity control component; 6. Heat dissipation component; 7. Heating component; 8. Infrared intensity control module; 9. Light sensing module; 10. Distance sensing module; 11. Second infrared LED emission module; 12. Optical filter plate; 13. Temperature measurement module; 14. Temperature control module; 15. Heating module; 16. Substrate layer; 17. Protective layer; 18. Metal wire layer; 19. Dielectric layer; 20. Passivation layer; 21. Notch; 22. First annular heat dissipation layer; 23. Second annular heat dissipation layer; 24. Aluminum hydroxide layer; 25. Magnesium hydroxide layer; 26. Copper heat dissipation layer; 27. Boron nitride heat dissipation layer; 28. Aluminum oxide heat dissipation layer; 29. ​​Groove; 30. Annular plate. DETAILED DESCRIPTION

[0040] In order to enable those skilled in the art to better understand the technical solution of the present invention, the present invention will be further described in detail below with reference to the accompanying drawings.

[0041] like Figure 1-5 As shown, an infrared emission chip structure provided by an embodiment of the present invention includes a semiconductor board 1, a keyboard matrix module 2, a coding modulation module 3, a first infrared LED emission module 4, an intensity control component 5, a heat dissipation component 6 and a heating component 7, wherein the intensity control component 5 is arranged on the top of the semiconductor board 1, the heat dissipation component 6 is arranged on the top of the semiconductor board 1, and the heating component 7 is arranged on the top of the semiconductor board 1;

[0042] The intensity control component 5 includes an infrared intensity control module 8 arranged on the top of the semiconductor board 1, a light sensing module 9 is arranged on one side of the semiconductor board 1, a distance sensing module 10 is arranged on one side of the semiconductor board 1, a second infrared LED emission module 11 is arranged on one side of the semiconductor board 1, a ring plate 30 is arranged on one side of the semiconductor board 1, and an optical filter plate 12 is arranged on one side of the ring plate 30. Firstly, the raw materials of each component of the glass are mixed evenly according to proportion, and put into a melting furnace at 1200-1400°C to melt the glass to form molten glass; secondly, the molten glass is subjected to The glass is homogenized to eliminate bubbles in the glass; the homogenized molten glass is poured or leaked into the optical filter plate 12 mold to form it, and the optical filter plate 12 is formed; then the formed body is placed in an annealing furnace for annealing; the optical filter plate 12 formed body is kept at 550-700°C for 24-72h to allow the optical filter plate 12 formed body to undergo a nucleation reaction, and finally the temperature is raised to 550-700°C and kept for 12-72h to allow crystals in the optical filter plate 12 formed body to grow, thereby obtaining the optical filter plate 12.

[0043] The intensity control component 5 provided can adjust the intensity of the infrared light signal of the infrared emission chip structure according to actual conditions, thereby preventing the infrared emission chip structure from wasting electricity, thereby increasing the emission effect of the infrared light signal of the infrared emission chip structure.

[0044] The infrared intensity control module 8 can start the second infrared LED emission module 11 according to the information provided by the light sensing module 9 and the distance sensing module 10, so that the infrared emission chip structure increases the intensity of the infrared light signal.

[0045] The light sensing module 9 is configured to sense the light intensity of the infrared emitting chip structure, so that the infrared intensity control module 8 determines the number of the second infrared LED emitting modules 11 that need to be activated.

[0046] The distance sensing module 10 is configured to sense the distance to the infrared receiving chip, so that the infrared intensity control module 8 determines the required attenuation degree of the infrared light.

[0047] The optical filter plate 12 can absorb or reflect light of a specific wavelength, thereby reducing the interference of light on the second infrared LED emission module 11 during use.

[0048] Reference Figure 4 The semiconductor board 1 of this embodiment includes a substrate layer 16 , a protection layer 17 , a metal line layer 18 , a dielectric layer 19 and a passivation layer 20 , and the protection layer 17 is arranged on the top of the substrate layer 16 .

[0049] The provided substrate layer 16 can provide a solid basic structure for the semiconductor board 1 , thereby increasing the stability of the semiconductor board 1 during use.

[0050] A notch 21 is opened on one side of the protection layer 17 , the metal wire layer 18 is arranged in the notch 21 , the dielectric layer 19 is arranged on the top of the protection layer 17 , and the passivation layer 20 is arranged on the top of the dielectric layer 19 .

[0051] The components in the infrared emission chip structure can be connected by the provided metal wire layer 18 .

[0052] Reference Figure 1 In this embodiment, the keyboard matrix module 2 is arranged on one side of the protective layer 17 , the coding modulation module 3 is arranged on the top of the passivation layer 20 , and the first infrared LED emission module 4 is arranged on one side of the protective layer 17 .

[0053] Reference Figure 3 The heating assembly 7 of this embodiment includes a temperature measuring module 13 , a temperature control module 14 and a heating module 15 . The temperature measuring module 13 is arranged on the top of the passivation layer 20 .

[0054] The infrared emission chip structure can be heated by the provided heating component 7, thereby preventing the infrared emission chip structure from being affected by the low temperature inside the structure.

[0055] The temperature control module 14 is disposed on the top of the passivation layer 20 , and the heating module 15 is disposed on the top of the passivation layer 20 .

[0056] The temperature control module 14 can be set to adjust the temperature required by the infrared emission chip structure, thereby improving the stability of the infrared emission chip structure during use.

[0057] Reference Figure 2 The heat dissipation assembly 6 of this embodiment includes a first annular heat dissipation layer 22, a second annular heat dissipation layer 23, an aluminum hydroxide layer 24, a magnesium hydroxide layer 25, a copper heat dissipation layer 26, a boron nitride heat dissipation layer 27 and an aluminum oxide heat dissipation layer 28, and the first annular heat dissipation layer 22 is arranged on the top of the passivation layer 20.

[0058] The heat dissipation component 6 can dissipate heat for the infrared emission chip structure, thereby preventing the infrared emission chip structure from having a high temperature after long-term use, thereby reducing the service life of the components.

[0059] The aluminum hydroxide layer 24 is arranged on the top of the first annular heat dissipation layer 22, the magnesium hydroxide layer 25 is arranged on the top of the aluminum hydroxide layer 24, the copper heat dissipation layer 26 is arranged on the top of the magnesium hydroxide layer 25, the boron nitride heat dissipation layer 27 is arranged on the top of the copper heat dissipation layer 26, and the aluminum oxide heat dissipation layer 28 is arranged on the top of the boron nitride heat dissipation layer 27.

[0060] A groove 29 is defined between the aluminum hydroxide layer 24 and the aluminum oxide heat dissipation layer 28 , and the second annular heat dissipation layer 23 is disposed in the groove 29 .

[0061] The second annular heat dissipation layer 23 can cooperate with the first annular heat dissipation layer 22 to make the gas inside flow, thereby dissipating the heat of the infrared emission chip structure.

[0062] A method for preparing an infrared emission chip structure, comprising the infrared emission chip structure, further comprising the following steps:

[0063] S1: First, the raw materials of various glass components are mixed evenly according to the proportion, and put into a melting furnace at 1200-1400℃ to melt the glass to form molten glass; secondly, the molten glass is homogenized to eliminate bubbles in the glass;

[0064] S2: pouring or leaking the homogenized molten glass into the mold of the optical filter plate 12 to form it, and after the optical filter plate 12 is formed into a molded body; then placing the molded body into an annealing furnace for annealing;

[0065] S3: keeping the optical filter plate 12 molded body at 550-700° C. for 24-72 hours to allow the optical filter plate 12 molded body to undergo a nucleation reaction, and finally raising the temperature to 550-700° C. and keeping the temperature for 12-72 hours to allow crystals in the optical filter plate 12 molded body to grow, thereby obtaining the optical filter plate 12;

[0066] S4: heating a sodium hydroxide solution to dissolve the aluminum oxide in the bauxite to obtain a sodium aluminate solution. After separating the sodium aluminate solution from the residual red mud, the solution is cooled, and aluminum hydroxide is added as a seed crystal. After long-term stirring, the sodium aluminate is decomposed to precipitate an aluminum hydroxide flame retardant, and the aluminum hydroxide flame retardant is made into an aluminum hydroxide layer 24;

[0067] S5: First, prepare 50% magnesium chloride solution and 20% sodium hydroxide solution according to MgCl2:NaOH=1, stir and mix for 5 minutes, then pour into a 1000mL autoclave, heat to 180°C and stir for 8 hours. Then, cool quickly, wash with distilled water, filter for several times, and dry the obtained paste at (1055)°C to obtain white magnesium hydroxide powder, which is made into magnesium hydroxide layer 25.

[0068] Working principle: First, the raw materials of various glass components are mixed evenly according to proportion, and put into a melting furnace at 1200-1400°C to melt the glass to form molten glass; secondly, the molten glass is homogenized to eliminate bubbles in the glass; and the homogenized molten glass is poured or leaked into the optical filter plate 12 mold to form it, and after the optical filter plate 12 is formed; then the formed body is placed in an annealing furnace for annealing; the optical filter plate 12 formed body is kept at 550-700°C for 24-72h to make the optical filter plate 12 formed body undergo nucleation reaction, and finally the temperature is raised to 550-700°C and kept for 12-72h to make the crystals in the optical filter plate 12 formed body grow to obtain the optical filter plate 12: the aluminum oxide in the bauxite is heated and dissolved with a sodium hydroxide solution to obtain a sodium aluminate solution. After separating the sodium aluminate solution from the residual red mud, the solution is cooled, and aluminum hydroxide is added as a seed crystal. After long-term stirring, the sodium aluminate decomposes and precipitates an aluminum hydroxide flame retardant, and the aluminum hydroxide flame retardant is made into an aluminum hydroxide layer 24; first prepare a 50% magnesium chloride solution and a 20% sodium hydroxide solution, stir and mix them according to MgCl2:NaOH=1 for 5 minutes, then pour them into a 1000mL autoclave, heat to 180°C and stir at a constant temperature for 8 hours. After rapid cooling, washing with distilled water, and filtering for multiple times, the resulting paste is dried at (1055)°C to obtain a white magnesium hydroxide powder, and the white magnesium hydroxide powder is made into a magnesium hydroxide layer 25.

[0069] The above description is only by way of illustration of certain exemplary embodiments of the present invention. It is undoubted that those skilled in the art can modify the described embodiments in various ways without departing from the spirit and scope of the present invention. Therefore, the above drawings and descriptions are illustrative in nature and should not be construed as limiting the scope of protection of the claims of the present invention.

Claims

1. An infrared emission chip structure, comprising a semiconductor board (1), a keyboard matrix module (2), a coding modulation module (3), a first infrared LED emission module (4), an intensity control component (5), a heat dissipation component (6) and a heating component (7), characterized in that: The strength control component (5) is arranged on the top of the semiconductor board (1), the heat dissipation component (6) is arranged on the top of the semiconductor board (1), and the heating component (7) is arranged on the top of the semiconductor board (1); The intensity control component (5) comprises an infrared intensity control module (8) arranged on the top of the semiconductor board (1), a light sensing module (9) is arranged on one side of the semiconductor board (1), a distance sensing module (10) is arranged on one side of the semiconductor board (1), a second infrared LED emission module (11) is arranged on one side of the semiconductor board (1), an annular plate (30) is arranged on one side of the semiconductor board (1), and an optical filter plate (12) is arranged on one side of the annular plate (30).

2. The infrared emission chip structure according to claim 1, characterized in that: The semiconductor board (1) comprises a substrate layer (16), a protective layer (17), a metal wire layer (18), a dielectric layer (19) and a passivation layer (20), wherein the protective layer (17) is arranged on the top of the substrate layer (16).

3. The infrared emission chip structure according to claim 2, characterized in that: A notch (21) is provided on one side of the protective layer (17), the metal wire layer (18) is arranged in the notch (21), the dielectric layer (19) is arranged on the top of the protective layer (17), and the passivation layer (20) is arranged on the top of the dielectric layer (19).

4. The infrared emission chip structure according to claim 2, characterized in that: The keyboard matrix module (2) is arranged on one side of the protective layer (17), the coding modulation module (3) is arranged on the top of the passivation layer (20), and the first infrared LED emission module (4) is arranged on one side of the protective layer (17).

5. The infrared emission chip structure according to claim 2, characterized in that: The heating component (7) comprises a temperature measurement module (13), a temperature control module (14) and a heating module (15); the temperature measurement module (13) is arranged on top of the passivation layer (20).

6. The infrared emission chip structure according to claim 5, characterized in that: The temperature control module (14) is arranged on the top of the passivation layer (20), and the heating module (15) is arranged on the top of the passivation layer (20).

7. The infrared emission chip structure according to claim 5, characterized in that: The heat dissipation component (6) comprises a first annular heat dissipation layer (22), a second annular heat dissipation layer (23), an aluminum hydroxide layer (24), a magnesium hydroxide layer (25), a copper heat dissipation layer (26), a boron nitride heat dissipation layer (27) and an aluminum oxide heat dissipation layer (28), wherein the first annular heat dissipation layer (22) is arranged on top of the passivation layer (20).

8. The infrared emission chip structure according to claim 7, characterized in that: The aluminum hydroxide layer (24) is arranged on top of the first annular heat dissipation layer (22), the magnesium hydroxide layer (25) is arranged on top of the aluminum hydroxide layer (24), the copper heat dissipation layer (26) is arranged on top of the magnesium hydroxide layer (25), the boron nitride heat dissipation layer (27) is arranged on top of the copper heat dissipation layer (26), and the aluminum oxide heat dissipation layer (28) is arranged on top of the boron nitride heat dissipation layer (27).

9. The infrared emission chip structure according to claim 7, characterized in that: A groove (29) is provided between the aluminum hydroxide layer (24) and the aluminum oxide heat dissipation layer (28), and the second annular heat dissipation layer (23) is arranged in the groove (29).

10. A method for preparing an infrared emission chip structure, comprising an infrared emission chip structure according to any one of claims 1 to 9, characterized in that: The following steps are involved: S1: First, the raw materials of various glass components are mixed evenly according to the proportion, and put into a melting furnace at 1200-1400℃ to melt the glass to form molten glass; secondly, the molten glass is homogenized to eliminate bubbles in the glass; S2: pouring or leaking the homogenized molten glass into the mold of the optical filter plate (12) to form it, and after the optical filter plate (12) is formed into a molded body; then placing the molded body into an annealing furnace for annealing; S3: keeping the optical filter plate (12) molded body at 550-700° C. for 24-72 hours to allow the optical filter plate (12) molded body to undergo a nucleation reaction, and finally raising the temperature to 550-700° C. and keeping the temperature for 12-72 hours to allow crystals in the optical filter plate (12) molded body to grow, thereby obtaining an optical filter plate (12); S4: heating a sodium hydroxide solution to dissolve aluminum oxide in the bauxite to obtain a sodium aluminate solution. After separating the sodium aluminate solution from the residue (red mud), cooling the solution, adding aluminum hydroxide as a seed crystal, and stirring for a long time to decompose the sodium aluminate to precipitate an aluminum hydroxide flame retardant, and the aluminum hydroxide flame retardant is made into an aluminum hydroxide layer (24); S5: First prepare 50% magnesium chloride solution and 20% sodium hydroxide solution according to MgCl2: NaOH=1 was stirred and mixed for 5 minutes, then poured into a 1000 mL autoclave and stirred, heated to 180°C and stirred at constant temperature for 8 hours. Then it was rapidly cooled, washed with distilled water, and filtered several times, and the resulting paste was dried at (1055)°C to obtain a white magnesium hydroxide powder, which was made into a magnesium hydroxide layer (25).

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