Solar cell preparation method for regulating and controlling quality of evaporated copper phthalocyanine film based on substrate

Abstract

The invention discloses a solar cell preparation method for regulating and controlling the quality of an evaporated copper phthalocyanine film based on a substrate, and the method comprises the steps: preparing an electron transmission layer on a conductive substrate, preparing a perovskite light absorption layer, covering the surface of perovskite with an ultrathin Spiro-OMeTAD molecular layer through a vacuum thermal evaporation method, and carrying out the evaporation of a copper phthalocyanine hole transmission layer. And finally evaporating a metal counter electrode. Wherein the Spiro-OMeTAD molecular layer can effectively repair physical defects on the surface of the perovskite polycrystalline thin film, copper phthalocyanine molecular deposition kinetics are further regulated and controlled, and closer molecular accumulation and better thin film coverage are obtained. The Spiro-OMeTAD can also optimize an interface energy level structure, and reverse injection of interface electrons is effectively blocked. The transmission efficiency of interface carriers is improved through improvement of the film quality and the interface energy level, and the CuPc-based perovskite solar cell shows 19.7% of photoelectric conversion efficiency. The introduction of the vacuum thermal evaporation technology further reduces the material cost, is more beneficial to the realization of large-area film formation, and lays a foundation for the marketization of the perovskite solar cell.

Description

Technical Field

[0001] The invention relates to the field of photovoltaic technology, and in particular to a method for preparing a solar cell based on substrate-based control of the quality of a vapor-deposited copper phthalocyanine film. Background Art

[0002] Photovoltaic power generation is an important part of the new energy industry. Compared with traditional crystalline silicon solar cells, metal halide perovskite solar cells (PSCs) are considered to have higher potential to support the long-term development of the future photovoltaic industry due to their excellent optoelectronic performance, low cost, easy preparation, structural diversity and low carbon footprint. In the past decade, the photoelectric conversion efficiency of PSCs has been continuously refreshed. The certified efficiency of single-junction small-area PSCs has exceeded 26%, and the structures of flexible, semi-transparent, and laminated photovoltaic devices have also been continuously enriched. With the improvement of photovoltaic performance, the scale-up and industrialization of perovskite solar cells have gradually been put on the agenda. However, the stability and large-area film-making process of PSCs still face major challenges. At present, Spiro-OMeTAD is the most commonly used and most efficient hole transport material in PSCs, and dopants (LiTFSI and tBP) need to be introduced to improve its hole mobility. Unfortunately, this doping system will cause serious stability problems such as ion migration, hygroscopicity, phase separation, and hysteresis, which restricts the service life and reliability of the device. However, the commercially available Spiro-OMeTAD is expensive, and the traditional solution spin coating method will cause a lot of material waste, which is not conducive to the large-scale production of PSCs. Therefore, finding efficient and alternative hole transport materials and film preparation methods has become an important research topic in the field of perovskite photovoltaics.

[0003] Copper phthalocyanine is a typical P-type semiconductor with good thermal and chemical stability, simple synthesis process and low price. It is widely used in optoelectronic devices, such as organic solar cells, organic field-effect transistors, detectors, etc. However, the application of copper phthalocyanine in perovskite solar cells is limited. The main reasons are: (1) poor solubility, it is not easy to prepare a dense and uniform copper phthalocyanine hole transport layer by traditional spin coating; (2) high crystallinity, high film defect density and poor film forming state; (3) low lowest unoccupied molecular orbital energy level (LUMO) and poor blocking effect on electron coupling. In order to realize the spin coating of copper phthalocyanine, researchers have developed a variety of chemically modified copper phthalocyanine semiconductor materials, such as CuPc-TIPS, CuMe2Pc, SMe-TPA-CuPc, etc. However, there are still many difficulties in achieving coordination in solubility, film forming properties and energy levels. At the same time, PSCs based on these hole transport materials often need to rely on post-treatment, interface modification or doping to achieve excellent battery performance.

[0004] Vacuum thermal evaporation is one of the important means of preparing semiconductor thin films. It is a thin film preparation method that converts solid molecules into gas by heating under vacuum conditions and then deposits them on a substrate. The evaporation method has the advantages of less raw materials required, large-area film formation, uniform and dense thin films, and easy control of film thickness, which is more conducive to the preparation of large-area perovskite solar cells. However, existing research results have shown that the deposition and film formation process of copper phthalocyanine molecules during thermal evaporation is very sensitive to the surface structure of the perovskite film. The complex polycrystalline stacking state, different crystal orientations, and many defect holes on the surface of perovskite make it difficult to obtain a dense and uniform copper phthalocyanine film. In addition, the energy level mismatch between copper phthalocyanine and perovskite causes serious interfacial electronic coupling. These factors lead to poor performance of CuPc-based perovskite solar cells, and the realization of high-efficiency copper phthalocyanine-based perovskite photovoltaic devices still faces major challenges. Summary of the invention

[0005] In view of this, the purpose of the present invention is to propose a solar cell preparation method based on substrate regulation of the quality of evaporated copper phthalocyanine film, which can prepare a high-quality copper phthalocyanine hole transport layer through vacuum thermal evaporation technology and realize high-efficiency CuPc-based perovskite solar cells.

[0006] In order to achieve the above technical objectives, the technical solution adopted by the present invention is:

[0007] A method for preparing a solar cell based on substrate-based regulation of the quality of a vapor-deposited copper phthalocyanine film, comprising: after pretreating a conductive substrate, sequentially preparing an electron transport layer, a perovskite absorption layer, a Spiro-OMeTAD modification layer, a copper phthalocyanine hole transport layer and a metal counter electrode on the conductive substrate.

[0008] In this scheme, after preparing the electron transport layer and the perovskite absorption layer on the conductive substrate, an ultra-thin Spiro-OMeTAD modification layer is first evaporated on the surface of the perovskite absorption layer to repair the physical defects on the perovskite surface and optimize the interface energy level arrangement. On this basis, the copper phthalocyanine hole transport layer is evaporated, and the deposition dynamics of the copper phthalocyanine molecules are induced and regulated by Spiro-OMeTAD molecules to prepare a CuPc film with higher substrate coverage and tighter molecular stacking, thereby improving the interface carrier injection and transfer efficiency, and obtaining high-performance copper phthalocyanine-based perovskite solar cells.

[0009] As a possible implementation manner, further, the electron transport layer, the perovskite absorption layer, the Spiro-OMeTAD modification layer, the copper phthalocyanine hole transport layer and the metal counter electrode described in this solution are sequentially stacked on the conductive substrate.

[0010] As a preferred implementation option, preferably, the method for pretreating the conductive substrate in this scheme includes:

[0011] The conductive substrate was ultrasonically cleaned with glass cleaning fluid, deionized water, acetone, ethanol and isopropanol for 10 to 20 minutes respectively, and then treated with a UV-ozone cleaner for 10 to 20 minutes to improve the wettability of the conductive substrate surface.

[0012] As a preferred implementation option, preferably, the conductive substrate described in this solution is any one of ITO conductive glass, FTO conductive glass, organic molecular polymer, carbon thin film material and metal thin film material.

[0013] As a preferred implementation option, preferably, the electron transport layer in this scheme is SnO2, and its preparation steps include:

[0014] The SnO2 colloid dispersion is diluted with deionized water at a volume ratio of 1:3 to obtain a SnO2 colloid dilution, and then the SnO2 colloid dilution is spin-coated on a conductive substrate by a spin coating method to prepare a SnO2 thin film, the spin coating speed is 1000-4000 rpm, the spin coating time is 30-40s, and a SnO2 wet film is obtained, and then the SnO2 wet film is annealed to complete the preparation of the electron transport layer, wherein the annealing temperature is 150-300°C and the annealing time is 20-60min.

[0015] As a preferred implementation option, preferably, the component of the perovskite absorption layer described in this scheme is any one of methylamine lead iodine, formamidine lead iodine, methylamine formamidine lead iodine, cesium lead iodine, cesium lead bromide, formamidine methylamine lead iodine bromide and formamidine methylamine cesium lead iodine bromide.

[0016] As a preferred implementation option, preferably, one of the preparation methods of the perovskite absorption layer in this solution may include:

[0017] The perovskite precursor solution was prepared with a mixed solvent of DMF and DMSO (v:v=1:3-1:5), and the perovskite light absorbing layer was prepared on the SnO2 electron transport layer; the film was prepared by a one-step spin coating method in a glove box, with a spin coating speed of 1000-8000 rpm and a duration of 20-40 seconds. The anti-solvent was ethyl acetate. Further, the perovskite film was heated to 100°C, annealed for 20-60 minutes, and cooled naturally for use.

[0018] As a preferred implementation option, preferably, the present invention prepares the Spiro-OMeTAD modification layer, the copper phthalocyanine hole transport layer and the metal counter electrode in a vacuum thermal evaporation apparatus with a vacuum degree of 10 -3 ~10 -7 Torr.

[0019] As a preferred implementation option, preferably, the method for preparing the Spiro-OMeTAD modified layer in this scheme includes:

[0020] Spiro-OMeTAD solid powder is placed in the evaporation chamber of a vacuum thermal evaporator, and a Spiro-OMeTAD film with a thickness of 5 to 30 nm is deposited under the process conditions of evaporation rate of 0.005 to 0.5 nm / s, evaporation temperature of 250 to 350° C., and evaporation time of 10 to 60 min.

[0021] As a preferred implementation option, preferably, the method for preparing a copper phthalocyanine hole transport layer in this scheme includes:

[0022] Put copper phthalocyanine solid powder into the evaporation chamber of the vacuum thermal evaporator and set it at a vacuum degree of 10. -3 ~10 -7 The copper phthalocyanine hole transport layer is prepared under the process conditions of 0.0447°C to 0.0200°C, a evaporation rate of 0.005-2nm / s, a evaporation temperature of 300-500°C, and a evaporation time of 30-100min, and the thickness of the layer is 10-80nm.

[0023] As a preferred implementation option, preferably, the metal counter electrode in this solution is metal Au or Ag, and its preparation method includes:

[0024] Au or Ag solid particles were placed in the evaporation chamber of the vacuum thermal evaporator. -3 ~10 -7 The counter electrode is prepared under the process conditions of 0.005-2 nm / s, evaporation rate of 700-1500° C., and evaporation time of 10-60 min, and the electrode thickness is 60-90 nm.

[0025] By adopting the above technical scheme, the present invention has the following beneficial effects compared with the prior art: the present scheme is ingenious. By first evaporating an ultra-thin layer of Spiro-OMeTAD between the perovskite and the copper phthalocyanine, the good film-forming property of the organic small molecule can effectively repair the defects such as gullies, grain boundaries, and pinholes on the surface of the polycrystalline perovskite, thereby promoting the formation of a dense, uniform, and high-coverage copper phthalocyanine film, and obtaining an undoped CuPc hole transport layer with high hole mobility. At the same time, Spiro-OMeTAD has a higher LUMO energy level than CuPc, so it has a stronger blocking ability for electronic coupling, can optimize the interface energy level structure of perovskite / CuPc, and reduce the non-radiative recombination loss of interface carriers, thereby realizing a copper phthalocyanine-based perovskite solar cell with high efficiency and high humidity stability. The present invention improves the quality of the evaporated copper phthalocyanine film with the help of the Spiro-OMeTAD molecular substrate, and obtains a high-performance perovskite solar cell. The dependence of PSCs on Spiro-OMeTAD is weakened, and the material cost is reduced. At the same time, vacuum thermal evaporation technology can easily realize large-area thin film preparation, has low substrate selectivity, is suitable for flexible substrates or substrates with large roughness, can accurately control the film thickness, and has a high utilization rate of raw materials, which is more conducive to the scale and commercialization of PSCs. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0027] Figure 1 Schematic diagram of the preparation process flow of copper phthalocyanine-based perovskite solar cells.

[0028] Figure 2 The following are scanning electron microscope images of the copper phthalocyanine film before and after the introduction of the Spiro-OMeTAD substrate. The film and device with the Spiro-OMeTAD substrate are named TE-S / C, and the film and device without the substrate are named TE-C. The following figures all follow this naming method. The thickness of the Spiro-OMeTAD substrate and the CuPc film are 10nm and 25nm respectively.

[0029] Figure 3 Conductive atomic force microscopy images of evaporated copper phthalocyanine thin films before and after the introduction of the Spiro-OMeTAD substrate.

[0030] Figure 4Kelvin probe microscopy images of CuPc film before and after the introduction of Spiro-OMeTAD modification layer and the corresponding potential distribution histogram.

[0031] Figure 5 Schematic diagram of the energy level arrangement of each functional layer in copper phthalocyanine-based perovskite photovoltaic devices.

[0032] Figure 6 Scanning photoluminescence spectra of CuPc film before and after the introduction of Spiro-OMeTAD modification layer.

[0033] Figure 7 Current-voltage curves of CuPc-based perovskite solar cells before and after the introduction of the Spiro-OMeTAD modification layer.

[0034] Figure 8 To investigate the long-term stability of unencapsulated CuPc-based perovskite solar cells before and after the introduction of the Spiro-OMeTAD modification layer. Test conditions: dry cabinet, relative humidity 30%, temperature 25°C. DETAILED DESCRIPTION

[0035] The present invention will be further described in detail below in conjunction with the accompanying drawings and examples. It is particularly noted that the following examples are only used to illustrate the present invention, but are not intended to limit the scope of the present invention. Similarly, the following examples are only partial embodiments of the present invention rather than all embodiments, and all other embodiments obtained by those of ordinary skill in the art without creative work are within the scope of protection of the present invention.

[0036] Example 1

[0037] In this embodiment, a copper phthalocyanine-based perovskite solar cell with a Spiro-OMeTAD modified layer is prepared. The process flow is as follows: Figure 1 As shown, the specific steps are as follows:

[0038] (1) Cleaning the conductive substrate: In this embodiment, ITO is selected as the conductive substrate. First, the glass is cut into 2×2 cm 2 The substrate was ultrasonically cleaned for 15 min with glass cleaning fluid, deionized water, acetone, ethanol and isopropanol respectively, and the conductive surface was treated with UV-ozone for 20 min to improve the wettability of the substrate surface. It was dried with compressed air for later use.

[0039] (2) Preparation of SnO2 electron transport layer: dilute the SnO2 colloidal dispersion with deionized water at a volume ratio of 1:3. Spin coat the SnO2 thin film on the conductive substrate obtained in step (1) at a spin coating speed of 2500 rpm for 30 seconds. Heat the SnO2 thin film to 200°C, anneal for 40 minutes, and cool naturally for later use.

[0040] (3) Preparation of perovskite light absorbing layer: FA 0.9 Cs 0.07 MA 0.03 Pb(I 0.92 Br 0.08 )3 is the light absorbing layer. First, prepare the perovskite precursor solution. Dissolve MAI (0.0252g), FABr (0.0542g), CsI (0.0986g), MACl (0.127g), PbBr2 (0.1584g), FAI (0.7636g), and PbI2 (2.365g) in 4mL of DMF and DMSO mixed solvent (v:v=1:4), and stir continuously at room temperature for 12h. Place the SnO2 film obtained in step (2) in a UV-ozone cleaning machine for 15min and then transfer it to a nitrogen glove box, and then use a one-step spin coating method to prepare the perovskite film. Take 40μL of the perovskite precursor solution and spread it on SnO2. Spin it at a speed of 1000rpm for 10s, and then spin it at a speed of 4000rpm for 30s. At the last 10 seconds of spin coating, 260 μL of ethyl acetate antisolvent was dripped onto the perovskite film. Finally, the wet perovskite film was transferred out of the glove box, placed on a flat hot plate and annealed at 100° C. for 40 minutes, and cooled naturally for use.

[0041] (4) Preparation of Spiro-OMeTAD modified layer: The perovskite film obtained in step (3) was placed in a vacuum thermal evaporation apparatus with a vacuum degree of 3×10 -4 The Spiro-OMeTAD film was deposited at a rate of 0.01 nm / s, the evaporation temperature was 280°C, the duration was 20 min, and the thickness of the Spiro-OMeTAD was 10 nm.

[0042] (5) Preparation of copper phthalocyanine hole transport layer: Based on step (4), copper phthalocyanine thin film is further evaporated, and the vacuum degree in the cavity is 3×10 -4 Torr, the evaporation rate is 0.01nm / s, the evaporation temperature is 380℃, the duration is 50min, and the thickness of the CuPc film is 25nm.

[0043] (6) Preparation of metallic silver counter electrode: Based on step (5), a silver counter electrode is finally evaporated, and the vacuum degree in the chamber is 3×10 -4 Torr, the evaporation rate is 0.1nm / s, the evaporation temperature is 800℃, the duration is 15min, and the electrode thickness is 80nm.

[0044] Example 2

[0045] This embodiment is substantially the same as Embodiment 1, except that in this embodiment, FTO is used as a conductive substrate to prepare a copper phthalocyanine-based perovskite solar cell having a Spiro-OMeTAD modified layer. Other specific steps are the same as those in Embodiment 1, and other repetitive contents will not be described again here.

[0046] Example 3

[0047] This embodiment is roughly the same as Example 1, except that in this embodiment, a perovskite material with a component of MAPbI3 is selected as a light-absorbing layer to prepare a copper phthalocyanine-based perovskite solar cell with a Spiro-OMeTAD modified layer. The perovskite precursor solution is first prepared, and MAI (0.238g) and PbI2 (0.692g) are dissolved in 1mL of a mixed solvent of DMF and DMSO (v:v=13:1), and stirred continuously at room temperature for 12h. 40μL of the perovskite precursor solution is spin-coated on the substrate at a speed of 4000rpm for 30s. At the 18th second of spin coating, 150μL of chlorobenzene antisolvent is dripped onto the perovskite film. Finally, the perovskite wet film is placed on a flat hot stage and annealed at 100°C for 10min, and cooled naturally for use. The other specific steps are the same as in Example 1, and other repeated contents will not be repeated here.

[0048] Example 4

[0049] This embodiment is substantially the same as the embodiment 1, except that in this embodiment, gold is used as the counter electrode to prepare a copper phthalocyanine-based perovskite solar cell with a Spiro-OMeTAD modified layer, and the vacuum degree in the cavity is 3×10 -4 Torr, the evaporation rate is 0.1 nm / s, the evaporation temperature is 1200° C., the duration is 15 min, and the thickness of the counter electrode is 80 nm. Other specific steps are the same as those in Example 1, and other repeated contents will not be repeated here.

[0050] Comparative Example 1

[0051] In this embodiment, a copper phthalocyanine-based perovskite solar cell with a Spiro-OMeTAD-free molecular substrate is prepared, and the specific steps are as follows:

[0052] (1) Cleaning the conductive substrate: In this embodiment, ITO is selected as the conductive substrate. First, the glass is cut into 2×2 cm 2 The substrate was ultrasonically cleaned for 15 min with glass cleaning fluid, deionized water, acetone, ethanol and isopropanol respectively, and the conductive surface was treated with UV-ozone for 20 min to improve the wettability of the substrate surface. It was dried with compressed air for later use.

[0053] (2) Preparation of SnO2 electron transport layer: dilute the SnO2 colloidal dispersion with deionized water at a volume ratio of 1:3. Spin coat the SnO2 thin film on the conductive substrate obtained in step (1) at a spin coating speed of 2500 rpm for 30 seconds. Heat the SnO2 thin film to 200°C, anneal for 40 minutes, and cool naturally for later use.

[0054] (3) Preparation of perovskite light absorbing layer: FA 0.9 Cs 0.07 MA 0.03 Pb(I 0.92 Br 0.08 )3 is the light absorbing layer. First, prepare the perovskite precursor solution. Dissolve MAI (0.0252g), FABr (0.0542g), CsI (0.0986g), MACl (0.127g), PbBr2 (0.1584g), FAI (0.7636g), and PbI2 (2.365g) in 4mL of DMF and DMSO mixed solvent (v:v=1:4), and stir continuously at room temperature for 12h. Place the SnO2 film obtained in step (2) in a UV-ozone cleaning machine for 15min and then transfer it to a nitrogen glove box, and then use a one-step spin coating method to prepare the perovskite film. Take 40μL of the perovskite precursor solution and spread it on SnO2. Spin it at a speed of 1000rpm for 10s, and then spin it at a speed of 4000rpm for 30s. At the last 10 seconds of spin coating, 260 μL of ethyl acetate antisolvent was dripped onto the perovskite film. Finally, the wet perovskite film was transferred out of the glove box, placed on a flat hot plate and annealed at 100° C. for 40 minutes, and cooled naturally for use.

[0055] (4) Preparation of copper phthalocyanine hole transport layer: Based on step (3), copper phthalocyanine thin film is further evaporated, and the vacuum degree in the cavity is 3×10 -4 Torr, the evaporation rate is 0.01nm / s, the evaporation temperature is 380℃, the duration is 50min, and the thickness of the CuPc film is 25nm.

[0056] (5) Preparation of metallic silver counter electrode: Based on step (4), a silver counter electrode is finally evaporated, and the vacuum degree in the chamber is 3×10 -4 Torr, the evaporation rate is 0.1nm / s, the evaporation temperature is 800℃, the duration is 15min, and the electrode thickness is 80nm.

[0057] According to the above results, when there is no Spiro-OMeTAD modification layer, the upper layer of CuPc is unevenly distributed in small particles, and the coverage of the substrate is low. This may be because the copper phthalocyanine molecules are partially crystallized, resulting in uneven film formation and poor coverage. After the introduction of the Spiro-OMeTAD modification layer, the CuPc film is more dense and smooth, with good substrate coverage ( Figure 2 ). It also has a higher carrier mobility ( Figure 3 ) and a more uniform surface potential distribution ( Figure 4 ), and its surface potential is reduced, which can effectively inhibit the reverse injection of electrons. The Spiro-OMeTAD modified layer can increase the LUMO energy level of the hole transport layer, effectively block the interface electron coupling, and reduce the non-radiative recombination loss ( Figure 5 The improvement of CuPc film quality and interface structure effectively improved the extraction and transmission efficiency of holes and accelerated the fluorescence quenching ( Figure 6 The device efficiency also increased from 14.49% to 19.79% ( Figure 7 ), unencapsulated PSCs retained 95% of their initial efficiency after aging for 1100 h in a dry cabinet at 30% relative humidity ( Figure 8 ).

[0058] The above descriptions are only some embodiments of the present invention, and are not intended to limit the protection scope of the present invention. Any equivalent device or equivalent process transformation made using the contents of the present invention specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present invention.

Claims

1. A method for preparing a solar cell based on substrate-based control of the quality of evaporated copper phthalocyanine thin film, characterized in that: It includes: After pre-treating the conductive substrate, an electron transport layer, a perovskite absorption layer, a Spiro-OMeTAD modification layer, a copper phthalocyanine hole transport layer and a metal counter electrode are sequentially prepared on the conductive substrate.

2. The method for preparing a solar cell based on substrate-based control of the quality of evaporated copper phthalocyanine thin film according to claim 1, characterized in that: The electron transport layer, the perovskite absorption layer, the Spiro-OMeTAD modification layer, the copper phthalocyanine hole transport layer and the metal counter electrode are sequentially stacked on the conductive substrate.

3. The method for preparing a solar cell based on substrate-controlled quality of evaporated copper phthalocyanine thin film according to claim 1 or 2, characterized in that: Methods for pre-treating conductive substrates include: The conductive substrate was ultrasonically cleaned with glass cleaning fluid, deionized water, acetone, ethanol and isopropanol for 10 to 20 minutes respectively, and then treated with a UV-ozone cleaning machine for 10 to 20 minutes.

4. The method for preparing a solar cell based on substrate-based control of the quality of evaporated copper phthalocyanine thin film according to claim 3, characterized in that: The conductive substrate is any one of ITO conductive glass, FTO conductive glass, organic molecular polymer, carbon thin film material and metal thin film material.

5. The method for preparing a solar cell based on substrate-based control of the quality of evaporated copper phthalocyanine thin film according to claim 1, characterized in that: The electron transport layer is SnO2, and its preparation steps include: The SnO2 colloid dispersion is diluted with deionized water at a volume ratio of 1:3 to obtain a SnO2 colloid dilution, and then the SnO2 colloid dilution is spin-coated on a conductive substrate by a spin coating method to prepare a SnO2 thin film, the spin coating speed is 1000-4000 rpm, the spin coating time is 30-40s, and a SnO2 wet film is obtained, and then the SnO2 wet film is annealed to complete the preparation of the electron transport layer, wherein the annealing temperature is 150-300°C and the annealing time is 20-60min.

6. The method for preparing a solar cell based on substrate-based control of the quality of evaporated copper phthalocyanine thin film according to claim 1, characterized in that: The component of the perovskite absorption layer is any one of methylamine lead iodine, formamidine lead iodine, methylamine formamidine lead iodine, cesium lead iodine, cesium lead bromide, formamidine methylamine lead iodine bromide and formamidine methylamine cesium lead iodine bromide; The preparation method of the perovskite absorption layer comprises: A perovskite precursor solution is prepared with a mixed solvent of DMF and DMSO at a ratio of v:v=1:3 to 1:5, the component raw materials of the perovskite absorption layer are dissolved therein, and then a perovskite light absorption layer is prepared on the SnO2 electron transport layer; a perovskite film is obtained by a one-step spin coating method in a glove box, the spin coating speed is 1000 to 8000 rpm, the duration is 20 to 40 seconds, and the anti-solvent is ethyl acetate; then the perovskite film is heated to 100°C and annealed for 20 to 60 minutes.

7. The method for preparing a solar cell based on substrate-based control of the quality of evaporated copper phthalocyanine thin film according to claim 1, characterized in that: The preparation of Spiro-OMeTAD modified layer, copper phthalocyanine hole transport layer and metal counter electrode was carried out in a vacuum thermal evaporation apparatus with a vacuum degree of 10 -3 ~10 -7 Torr.

8. The method for preparing a solar cell based on substrate-controlled quality of evaporated copper phthalocyanine thin film according to claim 7, characterized in that: The method for preparing the Spiro-OMeTAD modified layer comprises: Spiro-OMeTAD solid powder is placed in the evaporation chamber of a vacuum thermal evaporator, and a Spiro-OMeTAD film with a thickness of 5 to 30 nm is deposited under the process conditions of evaporation rate of 0.005 to 0.5 nm / s, evaporation temperature of 250 to 350° C., and evaporation time of 10 to 60 min.

9. The method for preparing a solar cell based on substrate-controlled quality of evaporated copper phthalocyanine thin film according to claim 7, characterized in that: The method for preparing a copper phthalocyanine hole transport layer comprises: Copper phthalocyanine solid powder is placed in the evaporation chamber of a vacuum thermal evaporator, and a copper phthalocyanine hole transport layer with a thickness of 10 to 80 nm is prepared under the process conditions of evaporation rate of 0.005 to 2 nm / s, evaporation temperature of 300 to 500° C., and evaporation time of 30 to 100 min.

10. The method for preparing a solar cell based on substrate-controlled quality of evaporated copper phthalocyanine thin film according to claim 7, characterized in that: The metal counter electrode is metal Au or Ag, and its preparation method includes: Au or Ag solid particles are placed in the evaporation chamber of a vacuum thermal evaporator, and a counter electrode is prepared under the process conditions of an evaporation rate of 0.005 to 2 nm / s, an evaporation temperature of 700 to 1500° C., and an evaporation time of 10 to 60 min. The electrode thickness is 60 to 90 nm.

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