Electromagnetic valve driving module, electromagnetic valve driving system and electronic equipment

Abstract

The invention provides an electromagnetic valve driving module, an electromagnetic valve driving system and electronic equipment, and the electromagnetic valve driving module comprises a first power tube, a second power tube, a driving unit and an interference isolation unit, and the interference isolation unit is connected with the driving unit when the first power tube is switched on and the second power tube is switched off. Enabling the first P-type doped region, the N-type well region and the second P-type doped region to be grounded so as to restrain current injected into the substrate; and when the first power tube and the second power tube are both turned off, the first P-type doped region, the N-type well region and the second P-type doped region are all in a suspended state so as to suppress the current extracted from the substrate, thereby suppressing the injection current and the extraction current of the substrate. Meanwhile, according to the technical scheme, an extra isolation structure and an extra P-type doped region do not need to be arranged, so that the occupation of the interference isolation unit on the area of the substrate is greatly reduced, and the manufacturing cost of the circuit is reduced.

Description

Technical Field

[0001] The present invention relates to the field of integrated circuits, and in particular to a solenoid valve drive module, a solenoid valve drive system and electronic equipment. Background Art

[0002] Solenoid valves are common electronically controlled switch devices in electrical control and are widely used in various circuits. Generally speaking, the drive module of the solenoid valve integrates a low-voltage logic control circuit, a power tube drive module and a power tube. The specific circuit structure is as follows: Figure 1 shown.

[0003] When the high-side drive solenoid valve turns on the high-side power tube M1, current will be injected into the substrate at the low-side power tube M2; when the high-side drive solenoid valve turns off the high-side power tube M1, current will be extracted from the substrate at the low-side power tube M2, causing interference to the circuit around the power tube M2, or even damage. Therefore, it is very important to suppress the injection and extraction currents of the substrate during the process of the power tube being driven.

[0004] However, the prior art solutions can generally only suppress the substrate's input current or the substrate's extraction current. If both the substrate's input current and the substrate's extraction current are suppressed, the suppression module will greatly increase the substrate area occupied, thereby increasing the circuit manufacturing cost.

[0005] Therefore, providing a low-cost solution that can suppress both the injection current and the extraction current of the substrate has become a technical problem that the industry urgently needs to solve. Summary of the invention

[0006] The embodiments of the present invention provide a solenoid valve driving module, a solenoid valve driving system and an electronic device to solve the problem that the prior art cannot suppress both the injection current and the extraction current of a substrate at a low cost.

[0007] In order to solve the above technical problems, the technical solution of the present invention provides a solenoid valve driving module for driving a solenoid valve, and the solenoid valve driving module includes:

[0008] A first power tube and a second power tube, wherein a first end of the first power tube is connected to a power supply voltage, a second end of the first power tube is connected to a driving end of the solenoid valve and a first end of the second power tube; and a second end of the second power tube is grounded;

[0009] A driving unit, used to control the control end of the first power tube and the control end of the second power tube respectively;

[0010] The interference isolation unit comprises a first interference isolation subunit and a switch subunit; wherein:

[0011] The first interference isolation sub-unit includes a first P-type doping region, an N-type well region, and a second P-type doping region that are sequentially spaced, wherein the first P-type doping region, the N-type well region, and the second P-type doping region are all arranged in the substrate where the second power tube is located, and surround the second power tube;

[0012] The switch subunit is used for:

[0013] When the first power tube is turned on and the second power tube is turned off, the first P-type doping region, the N-type well region and the second P-type doping region are all grounded to suppress the current injected into the substrate; and

[0014] When the first power tube and the second power tube are both turned off, the first P-type doping region, the N-type well region and the second P-type doping region are all in a suspended state to suppress the current extracted from the substrate;

[0015] The first power tube, the second power tube, the driving unit and the interference isolation unit are all integrated in the same P-type substrate.

[0016] Optionally, the driving unit receives a first driving signal and a second driving signal respectively, and controls the control end of the first power tube according to the first driving signal, and controls the control end of the second power tube according to the second driving signal; wherein:

[0017] If the first driving signal is at a high level, the first power tube is controlled to be turned on; if the first driving signal is at a low level, the first power tube is controlled to be turned off;

[0018] If the second driving signal is at a high level, the second power tube is controlled to be turned on; if the second driving signal is at a low level, the second power tube is controlled to be turned off.

[0019] Optionally, the switch subunit includes: a first inverter, a second inverter, a first switch tube, a second switch tube and a third switch tube;

[0020] The input end of the first inverter is connected to the first driving signal, the output end of the first inverter is connected to the input end of the second inverter, and the output end of the second inverter is connected to the control end of the first switch tube;

[0021] The first end of the first switch tube is connected to the second end of the first power tube, and the second end of the first switch tube is respectively connected to the first end of the second switch tube and the control end of the third switch tube;

[0022] The control end of the second switch tube is connected to the output end of the first inverter, and the second end of the second switch tube is connected to the ground end;

[0023] A first end of the third switch tube is connected to the ground, and a second end of the third switch tube is respectively connected to the first P-type doping region, the N-type well region, and the second P-type doping region.

[0024] Optionally, the first power tube, the second power tube and the first switch tube all include high-voltage NMOS tubes;

[0025] The first end of the first power tube, the first end of the second power tube and the first end of the first switch tube are all drains of the high-voltage NMOS tube; the second end of the first power tube, the second end of the second power tube and the second end of the first switch tube are all sources of the high-voltage NMOS tube; the control end of the first power tube, the control end of the second power tube and the control end of the first switch tube are all gates of the high-voltage NMOS tube.

[0026] Optionally, the second switch tube and the third switch tube both include low-voltage NMOS tubes;

[0027] The first end of the second switch tube and the first end of the third switch tube are both drains of the low-voltage NMOS tube; the second end of the second switch tube and the second end of the third switch tube are both sources of the low-voltage NMOS tube; the control end of the second switch tube and the control end of the third switch tube are both gates of the low-voltage NMOS tube.

[0028] Optionally, the solenoid valve driving module further includes: a digital filtering unit, wherein the digital filtering unit is used to filter the first driving signal and output a third driving signal to the input end of the first inverter.

[0029] Optionally, the solenoid valve driving module further includes: a second interference isolation subunit, the second interference isolation subunit includes a third P-type doping region, the third P-type doping region is arranged in the substrate where the first power tube is located and surrounds the first power tube.

[0030] Optionally, the driving unit includes a first driving sub-unit and a second driving sub-unit, the input end of the first driving sub-unit is connected to the first driving signal, and the output end of the first driving sub-unit is connected to the control end of the first power tube; the input end of the second driving sub-unit is connected to the second driving signal, and the output end of the second driving sub-unit is connected to the control end of the second power tube.

[0031] The technical solution of the present invention further provides a solenoid valve drive system, which is used to drive a plurality of solenoid valves. The solenoid valve drive system comprises:

[0032] A solenoid valve driving chip, the solenoid valve driving chip comprises a logic control unit and a plurality of the solenoid valve driving modules, each of the solenoid valve driving modules corresponds to a solenoid valve, and performs high-side driving or low-side driving on the corresponding solenoid valve, the logic control unit is used to control the corresponding solenoid valve driving module to perform high-side driving or low-side driving on the corresponding solenoid valve according to an input direct-connected driving control signal;

[0033] A system control chip, the system control chip is used to output the direct drive control signal through the direct connection pin of the solenoid valve drive chip;

[0034] A power supply chip, wherein the power supply chip is used to supply power to each module in the system control chip and the solenoid valve drive chip respectively.

[0035] The technical solution of the present invention further provides an electronic device, comprising the solenoid valve drive system.

[0036] Compared with the prior art, the technical solution provided by the present invention has the following beneficial effects:

[0037] In the solenoid valve driving module provided by the technical solution of the present invention, a first P-type doping region, an N-type well region, and a second P-type doping region are arranged in the substrate where the second power tube is located, which surround the second power tube and are spaced in sequence; and when the first power tube is turned on and the second power tube is turned off, the first P-type doping region, the N-type well region, and the second P-type doping region are all grounded to suppress the current injected into the substrate; and when the first power tube and the second power tube are both turned off, the first P-type doping region, the N-type well region, and the second P-type doping region are all in a suspended state to suppress the current extracted from the substrate, thereby suppressing both the injected current and the extracted current of the substrate. At the same time, because the technical solution of the present invention does not require the provision of an additional isolation structure and an additional P-type doping region, the area occupied by the substrate by the interference isolation unit is greatly reduced, thereby reducing the manufacturing cost of the circuit.

[0038] Further, when the driving unit controls the first power tube to be turned on according to the first driving signal, the conduction of the third switch tube depends on the conduction degree of the first power tube, which ensures that the third switch tube will not be turned on in advance when the first power tube is not turned on, and also ensures that the third switch tube will not be delayed in turning on after the first power tube is turned on, thereby accurately suppressing the injection current of the substrate. When the driving unit controls the first power tube to be turned off according to the first driving signal, the second switch tube is directly turned off, so that before the first power tube is turned off, the first P-type doping region, the N-type well region and the second P-type doping region are all in a suspended state in advance, thereby ensuring the suppression of the extraction current of the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 The present invention is a circuit structure diagram of an embodiment of a solenoid valve driving module;

[0040] Figure 2 A partial cross-sectional view of an embodiment of a solenoid valve drive module Figure 1 ;

[0041] Figure 3 A partial cross-sectional view of an embodiment of a solenoid valve drive module Figure 2 ;

[0042] Figure 4 The circuit structure of the solenoid valve drive module provided by the embodiment of the present invention is shown in FIG. Figure 1 ;

[0043] Figure 5 is a partial cross-sectional structural diagram of a solenoid valve driving module provided in an embodiment of the present invention;

[0044] Figure 6 The circuit structure of the solenoid valve drive module provided by the embodiment of the present invention is shown in FIG. Figure 2 ;

[0045] Figure 7 It is a time domain waveform diagram of the on and off of the solenoid valve driving module provided by the embodiment of the present invention;

[0046] Figure 8 The circuit structure of the solenoid valve drive module provided by the embodiment of the present invention is shown in FIG. Figure 3 ;

[0047] Fig. 9 The circuit structure of the solenoid valve drive module provided by the embodiment of the present invention is shown in FIG. Figure 4 . DETAILED DESCRIPTION

[0048] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present invention. The terms "first", "second", "third", "fourth", etc. (if any) in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable where appropriate, so that the embodiments of the present invention described here can be implemented in an order other than those illustrated or described here. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or sub-units is not necessarily limited to those steps or sub-units that are clearly listed, but may include other steps or sub-units that are not clearly listed or inherent to these processes, methods, products or devices.

[0049] Figure 1 The present invention is a circuit structure diagram of an embodiment of a solenoid valve driving module. Figure 2 and Figure 3 A partial cross-sectional view of an embodiment of a solenoid valve drive module is shown in FIG. Figure 1 and Figure 2 .

[0050] Please refer to Figure 1 , Figure 1 The embodiment of the solenoid valve driving module shown includes a high-side driving unit A1, a low-side driving unit A2, a high-side power tube M1 and a low-side power tube M2;

[0051] The high-side driving unit A1 is used to drive the gate of the high-side power tube M1, and the low-side driving unit A2 is used to drive the gate of the low-side power tube M2. The drain of the high-side power tube M1 is connected to the power supply, the source of the high-side power tube M1 is connected to the first driving end of the solenoid valve and the drain of the low-side power tube M2; the source of the low-side power tube M2 is connected to the second driving end of the solenoid valve.

[0052] In the process of high-side driving the electromagnetic valve, the low-side power tube M2 is controlled to be in the off state all the time, so the potential of the substrate where the low-side power tube M2 is located should fluctuate slightly above and below the zero potential.

[0053] However, at the moment when the high-side power tube M1 is controlled to be turned on, a large current will flow through the high-side power tube M1. At this time, because there is a parasitic capacitor Cj between the substrate where the low-side power tube M2 is located and the drain of the low-side power tube M2, a current will flow into the substrate where the low-side power tube M2 is located, causing the substrate to accumulate a large amount of negative charge and greatly reduce the potential.

[0054] In addition, at the moment when the high-side power tube M1 is controlled to be turned off, since the solenoid valve is an inductive load and the body diode of the low-side power tube M2 and the solenoid valve are connected through the substrate, the charge retained on the solenoid valve will flow through the body diode of the low-side power tube M2 through the substrate to form a current loop. This current loop will extract electrons in the substrate, causing the substrate to accumulate a large amount of positive charge and greatly increase its potential.

[0055] As can be seen from the above, in the process that the high-side power tube M1 is controlled to be continuously turned on and off, the potential of the substrate where the low-side power tube M2 is located will be continuously pulled down or up, causing a lot of substrate noise, thereby interfering with the surrounding devices of the substrate where the low-side power tube M2 is located, or even damaging them.

[0056] Please refer to Figure 2 In the prior art, when dealing with current injection into the substrate, a P-type doped region surrounding the low-side power tube M2 is set in the substrate where the low-side power tube M2 is located, and the P-type doped region is grounded to absorb the current injected into the substrate.

[0057] Please refer to Figure 3 In the prior art, when dealing with current injection into the substrate, a P-type doping region, an N-type well region and a P-type doping region surrounding the low-side power tube M2 are arranged in the substrate where the low-side power tube M2 is located. The P-type doping region, the N-type well region and the P-type doping region are arranged at intervals and are all in a suspended state. A parasitic NPN tube Q1 is formed by the N-type well region, the P-type substrate and the N-type injection region of the low-side power tube M2 to suppress the extraction of substrate electrons by the current loop.

[0058] The principle of setting two P-type doped regions to surround the N-type well region to suppress the extraction of electrons from the substrate by the current loop is as follows: when the current loop extracts electrons from the substrate, the potential of the P-type substrate will be higher than the N-type injection region of the low-side power tube M2 to turn on the parasitic NPN tube Q1. When the parasitic NPN tube Q1 is turned on, the potential of the N-type well region is pulled down, so the potentials of the two P-type doped regions are also pulled down. Since the two P-type doped regions and the P-type substrate are connected without isolation, the potential of the P-type substrate is pulled down by the two P-type doped regions. Therefore, by setting two P-type doped regions to surround the N-type well region and combining the power tube M2 and the P-type substrate to form a negative feedback loop, the potential of the P-type substrate is first high and then low, thereby suppressing the extraction of electrons from the substrate by the current loop.

[0059] It should be noted that in the existing CMOS process, the substrate of the integrated circuit is usually a P-type substrate. The specific reason is common knowledge in the art and will not be elaborated here.

[0060] However, the above-mentioned prior arts are all set up separately, and can only suppress the injection current or the extraction current of the substrate separately, but cannot suppress both the injection current and the extraction current of the substrate. If it is to achieve the suppression of both the injection current and the extraction current of the substrate, it is necessary to simultaneously set up the P-type doping region and the P-type doping region, the N-type well region and the P-type doping region arranged at intervals, and set an isolation structure between the P-type doping region and the P-type doping region, the N-type well region and the P-type doping region arranged at intervals to separate the P-type doping regions with different potentials, but this will greatly occupy the area of ​​the substrate, resulting in a significant increase in the area of ​​the substrate, thereby increasing the manufacturing cost of the circuit.

[0061] In view of this, an embodiment of the present invention provides a new solenoid valve driving module, which is used to drive a solenoid valve.

[0062] in, Figure 4 The circuit structure of the solenoid valve drive module provided by the embodiment of the present invention is shown in FIG. Figure 1 . Figure 5 It is a partial cross-sectional structural schematic diagram of the solenoid valve driving module provided in an embodiment of the present invention.

[0063] Please refer to Figure 4 and Figure 5 , the solenoid valve driving module provided by the embodiment of the present invention includes:

[0064] A first power tube Ma and a second power tube Mb, wherein a first end of the first power tube Ma is connected to a power supply voltage, a second end of the first power tube Ma is connected to a driving end of the solenoid valve and a first end of the second power tube Mb; and a second end of the second power tube Mb is grounded;

[0065] A driving unit 10, used to control the control end of the first power tube Ma and the control end of the second power tube Mb respectively;

[0066] The interference isolation unit includes a first interference isolation subunit 21 and a switch subunit 22; wherein:

[0067] The first interference isolation subunit 21 includes a first P-type doping region 211, an N-type well region, and a second P-type doping region 213 that are sequentially spaced apart, and the first P-type doping region 211, the N-type well region, and the second P-type doping region 213 are all arranged in the substrate where the second power tube Mb is located, and surround the second power tube Mb;

[0068] The switch subunit 22 is used for:

[0069] When the first power tube Ma is turned on and the second power tube Mb is turned off, the first P-type doping region 211, the N-type well region and the second P-type doping region 213 are all grounded to suppress the current injected into the substrate; and

[0070] When the first power tube Ma and the second power tube Mb are both turned off, the first P-type doping region 211, the N-type well region and the second P-type doping region 213 are all in a suspended state to suppress the current extracted from the substrate;

[0071] The first power tube Ma, the second power tube Mb, the driving unit 10 and the interference isolation unit are all integrated in the same P-type substrate.

[0072] Through the above technical means, the embodiment of the present invention can suppress both the injection current and the extraction current of the substrate without setting up additional isolation structures and additional P-type doping regions. The specific reasons are as follows:

[0073] A first P-type doping region 211, an N-type well region, and a second P-type doping region 213 are arranged in the P-type substrate where the second power tube Mb is located, and are sequentially spaced. The first P-type doping region 211, the N-type well region, and the second P-type doping region 213 are all controlled by the switch subunit 22 to be connected to the ground terminal.

[0074] When the driving unit 10 controls the first power tube Ma to be turned on and controls the second power tube Mb to be turned off, the switch subunit 22 grounds the first P-type doping area 211, the N-type well area and the second P-type doping area 213, so as to absorb the current injected into the substrate through the parasitic capacitance through the first P-type doping area 211 and the second P-type doping area 213, thereby suppressing the current injected into the P-type substrate where the second power tube Mb is located.

[0075] When the driving unit 10 controls the first power tube Ma and the second power tube Mb to be turned off, the switch subunit 22 makes the first P-type doping area 211, the N-type well area and the second P-type doping area 213 all in a suspended state, so that the N-type well area, the P-type substrate and the N-type injection area of ​​the second power tube Mb constitute a parasitic NPN tube. When the P-type substrate at the second power tube Mb is drawn with current, the potential of the P-type substrate will rise. Therefore, the base-emitter voltage of the parasitic NPN tube will also increase, so that the parasitic NPN tube is turned on, thereby pulling down the potential of the P-type substrate, and then suppressing the current extracted from the P-type substrate where the second power tube Mb is located. Therefore, the embodiment of the present invention can suppress both the injected current and the extracted current of the P-type substrate where the power tube is located.

[0076] At the same time, because the technical solution of the present invention does not require the provision of an additional isolation structure and an additional P-type doping region, the area occupied by the interference isolation unit on the substrate is greatly reduced, thereby reducing the manufacturing cost of the circuit.

[0077] It should be noted that the switch subunit 22 only needs to be connected to the first P-type doping area 211, the N-type well area and the second P-type doping area 213 and the ground terminal respectively, and does not need to surround the second power tube Mb, so a very small occupied area can be set.

[0078] In order to make the above-mentioned objects, features and beneficial effects of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0079] in, Figure 6 The circuit structure of the solenoid valve drive module provided by the embodiment of the present invention is shown in FIG. Figure 2 .

[0080] Please refer to Figure 6 As a specific implementation, the driving unit 10 receives a first driving signal v1 and a second driving signal v2 respectively, and controls the control end of the first power tube Ma according to the first driving signal v1, and controls the control end of the second power tube Mb according to the second driving signal v2; wherein:

[0081] If the first driving signal v1 is at a high level, the first power tube Ma is controlled to be turned on; if the first driving signal v1 is at a low level, the first power tube Ma is controlled to be turned off;

[0082] If the second driving signal v2 is at a high level, the second power tube Mb is controlled to be turned on; if the second driving signal v2 is at a low level, the second power tube Mb is controlled to be turned off.

[0083] Please refer to Figure 6 As a specific implementation, the switch subunit 22 includes: a first inverter inv1, a second inverter inv2, a first switch tube Mc, a second switch tube Md and a third switch tube Me;

[0084] The input end of the first inverter inv1 is connected to the first driving signal v1, the output end of the first inverter inv1 is connected to the input end of the second inverter inv2, and the output end of the second inverter inv2 is connected to the control end of the first switch tube Mc;

[0085] The first end of the first switch tube Mc is connected to the second end of the first power tube Ma, and the second end of the first switch tube Mc is respectively connected to the first end of the second switch tube Md and the control end of the third switch tube Me;

[0086] The control end of the second switch tube Md is connected to the output end of the first inverter inv1, and the second end of the second switch tube Md is connected to the ground end;

[0087] A first end of the third switch tube Me is connected to the ground, and a second end of the third switch tube Me is respectively connected to the first P-type doping region 211 , the N-type well region, and the second P-type doping region 213 .

[0088] Specifically, the first power tube Ma, the second power tube Mb and the first switch tube Mc all include high-voltage NMOS tubes; the first end of the first power tube Ma, the first end of the second power tube Mb and the first end of the first switch tube Mc are all drains of the high-voltage NMOS tube; the second end of the first power tube Ma, the second end of the second power tube Mb and the second end of the first switch tube Mc are all sources of the high-voltage NMOS tube; the control end of the first power tube Ma, the control end of the second power tube Mb and the control end of the first switch tube Mc are all gates of the high-voltage NMOS tube.

[0089] The second switch tube Md and the third switch tube Me both include a low-voltage NMOS tube; the first end of the second switch tube Md and the first end of the third switch tube Me are both drains of the low-voltage NMOS tube; the second end of the second switch tube Md and the second end of the third switch tube Me are both sources of the low-voltage NMOS tube; the control end of the second switch tube Md and the control end of the third switch tube Me are both gates of the low-voltage NMOS tube.

[0090] The specific working principle of the switch subunit 22 is described below:

[0091] in, Figure 7 It is a time domain waveform diagram of the on and off of the solenoid valve driving module provided by the embodiment of the present invention.

[0092] Please refer to Figure 6 and Figure 7 , when the first driving signal v1 is at a high level, the first power tube Ma and the first switch tube Mc are both turned on. Since the first power tube Ma needs to be driven to turn on by the driving unit 10, the turn-on time of the first power tube Ma is slower than that of the first switch tube Mc, so the first switch tube Mc will be turned on first. In the process of turning on the first power tube Ma, the source voltage of the first power tube Ma will also gradually increase. Within the first time t1, when the source voltage of the first power tube Ma increases to the threshold voltage of the third switch tube Me, the third switch tube Me is turned on to connect the first P-type doping region 211, the N-type well region and the second P-type doping region 213 to the ground, thereby suppressing the current injected into the P-type substrate where the second power tube Mb is located. Since the conduction of the third switch tube Me depends on the source voltage of the first power tube Ma, that is, the conduction of the third switch tube Me depends on the conduction degree of the first power tube Ma, it is ensured that the third switch tube Me will not be turned on in advance when the first power tube Ma is not turned on, and it is also ensured that the third switch tube Me will not be delayed in turning on after the first power tube Ma is turned on, thereby accurately suppressing the current injected into the P-type substrate where the second power tube Mb is located.

[0093] When the first driving signal v1 is at a low level, the first power tube Ma and the first switch tube Mc are both turned off. When the first power tube Ma is turned off, the second switch tube Md is quickly turned on, so that the first P-type doping region 211, the N-type well region and the second P-type doping region 213 are all in a suspended state, ensuring that the second switch tube Md will not be delayed in turning on after the first power tube Ma is turned off, thereby accurately suppressing the current drawn from the P-type substrate where the second power tube Mb is located.

[0094] in, Figure 8 The circuit structure of the solenoid valve drive module provided by the embodiment of the present invention is shown in FIG. Figure 3 .

[0095] Please refer to Figure 8 As a specific implementation, the solenoid valve driving module further includes: a digital filtering unit 40, wherein the digital filtering unit 40 is used to filter the first driving signal v1 and output a third driving signal v3 to the input end of the first inverter inv1.

[0096] Please refer to Figure 8As a specific implementation, the solenoid valve driving module also includes: a second interference isolation sub-unit, the second interference isolation sub-unit includes a third P-type doping region 30, the third P-type doping region 30 is arranged in the substrate where the first power tube Ma is located and is grounded, and surrounds the first power tube Ma.

[0097] The second interference isolation subunit is used for absorbing and suppressing the current injected into the P-type substrate where the first power tube Ma is located when the second power tube Mb is driven to be turned off and the first power tube Ma is driven to be turned on.

[0098] in, Fig. 9 The circuit structure of the solenoid valve drive module provided by the embodiment of the present invention is shown in FIG. Figure 4 .

[0099] Please refer to Fig. 9 As a specific implementation, the driving unit 10 includes a first driving subunit 11 and a second driving subunit 12, wherein the input end of the first driving subunit 11 is connected to the first driving signal v1, and the output end of the first driving subunit 11 is connected to the control end of the first power tube Ma; the input end of the second driving subunit 12 is connected to the second driving signal v2, and the output end of the second driving subunit 12 is connected to the control end of the second power tube Mb.

[0100] In summary, the solenoid valve driving module provided by the embodiment of the present invention is provided in the substrate where the second power tube is located, by setting a first P-type doping region, an N-type well region, and a second P-type doping region surrounding the second power tube and sequentially spacing therebetween; and when the first power tube is turned on and the second power tube is turned off, the first P-type doping region, the N-type well region, and the second P-type doping region are all grounded to suppress the current injected into the substrate; and when the first power tube and the second power tube are both turned off, the first P-type doping region, the N-type well region, and the second P-type doping region are all in a suspended state to suppress the current extracted from the substrate, thereby suppressing both the injected current and the extracted current of the substrate. At the same time, because the technical solution of the present invention does not require the provision of an additional isolation structure and an additional P-type doping region, the area occupied by the substrate by the interference isolation unit is greatly reduced, thereby reducing the manufacturing cost of the circuit.

[0101] Further, when the driving unit controls the first power tube to be turned on according to the first driving signal, the conduction of the third switch tube depends on the conduction degree of the first power tube, which ensures that the third switch tube will not be turned on in advance when the first power tube is not turned on, and also ensures that the third switch tube will not be delayed in turning on after the first power tube is turned on, thereby accurately suppressing the injection current of the substrate. When the driving unit controls the first power tube to be turned off according to the first driving signal, the second switch tube is directly turned off, so that before the first power tube is turned off, the first P-type doping region, the N-type well region and the second P-type doping region are all in a suspended state in advance, thereby ensuring the suppression of the extraction current of the substrate.

[0102] The embodiment of the present invention further provides a solenoid valve driving system, the solenoid valve driving system is used to drive a plurality of solenoid valves, the solenoid valve driving system comprises:

[0103] A solenoid valve driving chip, the solenoid valve driving chip comprises a logic control unit and a plurality of the solenoid valve driving modules, each of the solenoid valve driving modules corresponds to a solenoid valve, and performs high-side driving or low-side driving on the corresponding solenoid valve, the logic control unit is used to control the corresponding solenoid valve driving module to perform high-side driving or low-side driving on the corresponding solenoid valve according to an input direct-connected driving control signal;

[0104] A system control chip, the system control chip is used to output the direct drive control signal through the direct connection pin of the solenoid valve drive chip;

[0105] A power supply chip, wherein the power supply chip is used to supply power to each module in the system control chip and the solenoid valve drive chip respectively.

[0106] An embodiment of the present invention further provides an electronic device, comprising the solenoid valve driving system.

[0107] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A solenoid valve drive module, characterized in that: Used to drive the solenoid valve, the solenoid valve driving module includes: A first power tube and a second power tube, wherein a first end of the first power tube is connected to a power supply voltage, a second end of the first power tube is connected to a driving end of the solenoid valve and a first end of the second power tube; and a second end of the second power tube is grounded; A driving unit, used to control the control end of the first power tube and the control end of the second power tube respectively; The interference isolation unit comprises a first interference isolation subunit and a switch subunit; wherein: The first interference isolation sub-unit includes a first P-type doping region, an N-type well region, and a second P-type doping region that are sequentially spaced, wherein the first P-type doping region, the N-type well region, and the second P-type doping region are all arranged in the substrate where the second power tube is located, and surround the second power tube; The switch subunit is used for: When the first power tube is turned on and the second power tube is turned off, the first P-type doping region, the N-type well region and the second P-type doping region are all grounded to suppress the current injected into the substrate; and When the first power tube and the second power tube are both turned off, the first P-type doping region, the N-type well region and the second P-type doping region are all in a suspended state to suppress the current extracted from the substrate; The first power tube, the second power tube, the driving unit and the interference isolation unit are all integrated in the same P-type substrate.

2. The solenoid valve driving module according to claim 1, characterized in that: The driving unit receives a first driving signal and a second driving signal respectively, and controls the control end of the first power tube according to the first driving signal, and controls the control end of the second power tube according to the second driving signal; wherein: If the first driving signal is at a high level, the first power tube is controlled to be turned on; if the first driving signal is at a low level, the first power tube is controlled to be turned off; If the second driving signal is at a high level, the second power tube is controlled to be turned on; if the second driving signal is at a low level, the second power tube is controlled to be turned off.

3. The solenoid valve driving module according to claim 2, characterized in that: The switch subunit includes: a first inverter, a second inverter, a first switch tube, a second switch tube and a third switch tube; The input end of the first inverter is connected to the first driving signal, the output end of the first inverter is connected to the input end of the second inverter, and the output end of the second inverter is connected to the control end of the first switch tube; The first end of the first switch tube is connected to the second end of the first power tube, and the second end of the first switch tube is respectively connected to the first end of the second switch tube and the control end of the third switch tube; The control end of the second switch tube is connected to the output end of the first inverter, and the second end of the second switch tube is connected to the ground end; A first end of the third switch tube is connected to the ground, and a second end of the third switch tube is respectively connected to the first P-type doping region, the N-type well region, and the second P-type doping region.

4. The solenoid valve driving module according to claim 3, characterized in that: The first power tube, the second power tube and the first switch tube all include high-voltage NMOS tubes; The first end of the first power tube, the first end of the second power tube and the first end of the first switch tube are all drains of the high-voltage NMOS tube; the second end of the first power tube, the second end of the second power tube and the second end of the first switch tube are all sources of the high-voltage NMOS tube; the control end of the first power tube, the control end of the second power tube and the control end of the first switch tube are all gates of the high-voltage NMOS tube.

5. The solenoid valve driving module according to claim 3, characterized in that: The second switch tube and the third switch tube both include low-voltage NMOS tubes; The first end of the second switch tube and the first end of the third switch tube are both drains of the low-voltage NMOS tube; the second end of the second switch tube and the second end of the third switch tube are both sources of the low-voltage NMOS tube; the control end of the second switch tube and the control end of the third switch tube are both gates of the low-voltage NMOS tube.

6. The solenoid valve driving module according to claim 3, characterized in that: The solenoid valve driving module further includes: a digital filtering unit, which is used to filter the first driving signal and output a third driving signal to the input end of the first inverter.

7. The solenoid valve driving module according to claim 1, characterized in that: The solenoid valve driving module further includes: a second interference isolation subunit, the second interference isolation subunit includes a third P-type doping region, the third P-type doping region is arranged in the substrate where the first power tube is located, and surrounds the first power tube.

8. The solenoid valve driving module according to claim 2, characterized in that: The driving unit includes a first driving subunit and a second driving subunit, wherein an input end of the first driving subunit is connected to the first driving signal, and an output end of the first driving subunit is connected to a control end of the first power tube; an input end of the second driving subunit is connected to the second driving signal, and an output end of the second driving subunit is connected to a control end of the second power tube.

9. A solenoid valve drive system, characterized in that: The solenoid valve driving system is used to drive a plurality of solenoid valves, and the solenoid valve driving system comprises: A solenoid valve driving chip, the solenoid valve driving chip comprising a logic control unit and a plurality of solenoid valve driving modules according to any one of claims 1 to 8, each of the solenoid valve driving modules corresponding to a solenoid valve, and performing high-side driving or low-side driving on the corresponding solenoid valve, the logic control unit being used to control the corresponding solenoid valve driving module to perform high-side driving or low-side driving on the corresponding solenoid valve according to an input direct-connected driving control signal; A system control chip, the system control chip is used to output the direct drive control signal through the direct connection pin of the solenoid valve drive chip; A power supply chip, wherein the power supply chip is used to supply power to each module in the system control chip and the solenoid valve drive chip respectively.

10. An electronic device, characterized in that: Includes the solenoid valve drive system as described in claim 9.

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