Vapor deposition equipment

Abstract

The embodiment of the invention provides vapor deposition equipment, which comprises a deposition chamber, a gas inlet pipe, a gas outlet pipe, a gas inlet pipe and a gas outlet pipe, the at least one bearing platform is arranged in the deposition chamber and is suitable for bearing a wafer; the spraying device is arranged in the deposition chamber, is opposite to the bearing platform, is communicated with the opening and is suitable for spraying reaction gas to the surface of the wafer so as to form a deposition film on the surface of the wafer; the heating device is arranged below the corresponding bearing platform and is suitable for providing heat for the corresponding wafer; the heating device comprises a plurality of heating elements, the heating elements are connected with different power sources, and voltage values and reaction gas parameters of the power sources connected with the heating elements, resistance values of the corresponding heating elements, physical parameters of the deposited thin film, the distance between the deposited thin film and the center position of the corresponding bearing platform, the initial temperature and the deposition time are related. By adopting the equipment, the uniformity of the thickness of the film deposited on the surface of the wafer can be improved.

Description

Technical Field

[0001] The embodiments of the present specification relate to the field of semiconductor manufacturing technology, and in particular, to a vapor deposition device. Background Art

[0002] In the semiconductor manufacturing process, the mask process is an important step in the wafer surface patterning. During the mask process, the wafer is placed in a vapor deposition device, and a mixture of metal ions and gas is reacted in the vapor deposition device to form a deposited film on the wafer surface.

[0003] Among them, the existing vapor deposition equipment usually includes a carrying platform for carrying multiple wafers, and a heating unit arranged below the carrying platform and located in the central area of ​​the carrying platform, which is used to provide the temperature required for the reaction during the process of forming the deposited film.

[0004] However, due to the different distances between different wafers and the heating unit, the temperature of the wafer surface located in the center area of ​​the carrier platform is higher than that of the edge area, and the temperature will affect the deposition rate of the thin film deposited on the wafer surface, making the thickness of the thin film deposited on the wafer located in the center area of ​​the carrier platform lower than that of the thin film in the edge area. Therefore, using the existing vapor deposition equipment, the thickness of the thin film deposited on the wafer surface is inconsistent and the uniformity is poor. Summary of the invention

[0005] In view of this, an embodiment of the present specification provides a vapor deposition device that can improve the uniformity of the thickness of a thin film deposited on a wafer surface.

[0006] The embodiment of this specification provides a vapor deposition device, including:

[0007] The deposition chamber has an opening at the top for inputting reaction gas;

[0008] At least one carrying platform is disposed in the deposition chamber and is suitable for carrying a wafer, and the center of the carrying platform and the center of the wafer are located on the same axis to form a deposition film on the surface of the wafer;

[0009] A spraying device, disposed in the deposition chamber, opposite to the carrying platform and in communication with the opening, suitable for spraying the reaction gas onto the surface of the wafer;

[0010] A heating device is arranged under the corresponding supporting platform and is suitable for providing heat for the corresponding wafer; the heating device includes multiple heating elements, each heating element is connected to a different power supply, and the voltage value of the power supply connected to each heating element is related to the reaction gas parameters, the resistance value of the corresponding heating element, the physical parameters of the deposited film, the distance between the deposited film and the center position of the corresponding supporting platform, the initial temperature, and the deposition time.

[0011] Optionally, the voltage value of the power supply connected to each heating element, the reaction gas parameters, the resistance value of the corresponding heating element, the physical parameters of the deposited film, the distance between the deposited film and the center position of the corresponding supporting platform, the initial temperature, and the deposition time satisfy the following corresponding relationship:

[0012]

[0013] Among them, u is suitable for representing the voltage value of the power supply connected to the corresponding heating element; k is suitable for representing the Boltzmann constant, E a Reaction activation energy for the reaction gas, K s0 Suitable for characterizing the reaction coefficient constant, C g It is suitable for characterizing the concentration of the reaction gas, R is suitable for characterizing the resistance of the corresponding heating element, C is suitable for characterizing the specific heat capacity of the deposited film, m is suitable for characterizing the mass of the deposited film corresponding to the corresponding heating element, N is suitable for characterizing the molecular density of the deposited film, h0 is suitable for characterizing the thickness of the deposited film in the central area of ​​the supporting platform, C1 is suitable for characterizing the deviation coefficient of the deposited film, x is suitable for characterizing the distance between the deposited film and the center position of the corresponding supporting platform, T0 is suitable for characterizing the initial temperature, and t is suitable for characterizing the deposition time.

[0014] Optionally, the physical parameters of each heating element are the same.

[0015] Optionally, the heating elements are distributed in a circular array below the carrying platform.

[0016] Optionally, the spraying device includes: a gas channel and a plurality of nozzles arranged in the gas channel, wherein: the gas channel is connected to the opening and has a gas supply port, and the gas supply port is connected to each nozzle.

[0017] Optionally, the nozzles are evenly arranged inside the gas channel.

[0018] Optionally, an exhaust port is provided at the bottom of the deposition chamber to discharge the reacted gas.

[0019] Optionally, the vapor deposition equipment further comprises: a gas flow control device, adapted to control the flow of reaction gas entering the deposition chamber.

[0020] Optionally, the gas flow control device comprises:

[0021] A gas supply module, adapted to provide the reaction gas;

[0022] The control module is coupled to the air supply module and is suitable for controlling the air supply flow of the air supply module.

[0023] Optionally, the vapor deposition equipment further includes: a vacuum device, which is connected to the deposition chamber and is suitable for providing a vacuum environment for the deposition chamber.

[0024] Using the vapor deposition equipment provided in the embodiment of this specification, the heating device may include a plurality of heating elements, each of which may be located below the corresponding supporting platform to provide heat to the wafer above the supporting platform, thereby changing the temperature of the wafer surface. Since each heating element can be connected to a different power source, and the voltage value of the power source connected to each heating element is related to the reaction gas parameters, the resistance value of the corresponding heating element, the physical parameters of the deposited film, the distance between the deposited film and the center position of the corresponding supporting platform, the initial temperature, and the deposition time, different voltages can be provided for different areas of the wafer surface according to the process requirements of different areas of the wafer surface, thereby generating different heat, reducing the temperature difference between different areas of the wafer surface, making the deposition rate difference of the deposited film in different areas of the wafer surface smaller, thereby improving the uniformity of the thickness of the deposited film on the wafer surface.

[0025] Furthermore, by making the physical parameters of each heating element the same, the heat generated by each heating element can be controlled by changing the voltage of the power supply connected to the corresponding heating element while keeping other parameters unchanged, which is simple to operate.

[0026] Furthermore, by distributing the heating elements in a circular array under the supporting platform, the heating elements can be distributed more evenly and the heat generated can be more evenly distributed, thereby making the temperature distribution between different areas on the wafer surface more uniform, reducing the temperature difference between different areas and further improving the uniformity of the thickness of the deposited film on the wafer surface.

[0027] Furthermore, the spraying device may include a gas channel and a plurality of nozzles arranged in the gas channel. Since the nozzles are evenly arranged inside the gas channel, the consistency of spraying the reaction gas can be improved, and the uniformity of the thin film deposited on the wafer surface can be further improved.

[0028] Furthermore, an exhaust port is provided at the bottom of the deposition chamber, and when the deposition process is completed or new reaction gas needs to be introduced, the gas remaining in the deposition chamber can be exhausted.

[0029] Furthermore, the vapor deposition equipment may also include a gas flow control device, through which the flow rate of the reaction gas entering the deposition chamber can be controlled, thereby changing the time required for deposition.

[0030] Furthermore, the vapor deposition equipment may further include a vacuum device. Since the vacuum device may be in communication with the deposition chamber, the gas in the deposition chamber may be sucked to provide a vacuum environment for the deposition chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments of the present invention or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0032] Figure 1 A schematic diagram showing the distribution position of wafers on a carrying platform in a vapor deposition device is shown;

[0033] Figure 2 Shows Figure 1 Schematic diagram of thin film deposition on the wafer surface;

[0034] Figure 3a A schematic diagram of the structure of a vapor deposition device in this specification is shown;

[0035] Figure 3b for Figure 3a A partial enlarged view of the heating device;

[0036] Figure 4 A schematic diagram showing the distribution of a heating element under a carrying platform in an embodiment of this specification is shown;

[0037] Figure 5 A schematic diagram showing a thin film deposited on a wafer surface in a specific application scenario of this specification is shown;

[0038] Figure 6 A schematic structural diagram of a spraying device according to an embodiment of the present specification is shown. DETAILED DESCRIPTION

[0039] As described in the background technology, with the current structure of the vapor deposition equipment, due to the different distances between different areas of the surface of the wafer carried on the carrying platform and the heating unit, during the deposition process, the thickness of the film deposited on the wafer located in the center area of ​​the carrying platform is lower than the thickness of the film in the edge area.

[0040] In order to more clearly illustrate the problems in the prior art, the following is a detailed description with reference to specific examples in conjunction with the accompanying drawings.

[0041] like Figure 1 As shown, the distribution position of the vapor deposition equipment on the carrying platform is shown, which is a structural schematic diagram of the vapor deposition equipment from a top view.

[0042] exist Figure 1 In the vapor deposition device, a plurality of supporting platforms (eg Figure 1 The carrier platforms 21 to 24 are shown, each of which carries a wafer (for example, the carrier platform 21 carries the wafer W1, the carrier platform 22 carries the wafer W2, the carrier platform 23 carries the wafer W3, and the carrier platform 24 carries the wafer W4), so that the vapor deposition process of multiple wafers can be carried out simultaneously. Figure 1 The support member (not shown) may be located below the carrier platform 10 and disposed in a central area of ​​the reaction chamber 10 .

[0043] Since the distances between different regions on the surface of each wafer and the heating device are different, the thickness of the deposited film on the wafer is different. For example, the distances between different regions on the surface of the wafer W1 and the heating device are all different.

[0044] For ease of description and understanding, the thickness of the thin film deposited on the wafer W1 is taken as an example for explanation.

[0045] Continue to refer to Figure 1 , along the direction indicated by the dotted line L in the figure, select 3 points at random from the surface of the wafer W1, namely Figure 1 The three points A, B and C in the figure are at different distances from the heating device. The temperature in the area where point A is located is the lowest, and the temperature in the area where point C is located is the highest.

[0046] After a deposition process, such as Figure 2 As shown, a thin film 20 can be formed on the surface of the wafer W1, but the thickness of the deposited film is inconsistent. The deposited film in the area where point A is located is the highest, while the deposited film in the area where point C is located is the lowest.

[0047] It is understandable that the formation of the deposited thin films on the wafers W2 to W4 can refer to the wafer W1 and will not be elaborated herein.

[0048] In order to solve the above technical problems, the embodiment of this specification provides a vapor deposition device, wherein the heating device may include a plurality of heating elements, each of which may be located below the corresponding supporting platform to provide heat for the wafer above the supporting platform, thereby changing the temperature of the wafer surface. Since each heating element can be connected to a different power source, and the voltage value of the power source connected to each heating element is related to the reaction gas parameters, the resistance value of the corresponding heating element, the physical parameters of the deposited film, the distance between the deposited film and the center position of the corresponding supporting platform, the initial temperature, and the deposition time, different voltages can be provided for different areas of the wafer surface according to the process requirements of different areas of the wafer surface, thereby generating different heat, reducing the temperature difference between different areas of the wafer surface, making the deposition rate difference of the deposited film in different areas of the wafer surface smaller, thereby improving the uniformity of the thickness of the deposited film on the wafer surface.

[0049] In order to enable those skilled in the art to better understand and implement the vapor deposition equipment in the embodiments of this specification, the following is a detailed description with reference to the accompanying drawings and through specific application examples.

[0050] Reference Figure 3a and Figure 3b ,in, Figure 3a A schematic diagram of the structure of a vapor deposition device provided in an embodiment of this specification, Figure 3b for Figure 3a A partial enlarged view of the heating device. Figure 3a and 3b In some embodiments of the present specification, the vapor deposition device T may include: a deposition chamber 110, at least one carrying platform (such as Figure 3a The supporting platforms 120 and 121 are shown), a spraying device 130 and a heating device 140.

[0051] For ease of description and understanding, the following takes the wafer W5 disposed on the carrier platform 120 as an example to illustrate the vapor deposition device T in the embodiment of this specification.

[0052] The deposition chamber 110 is provided with an opening 111 at its upper portion for inputting reaction gas;

[0053] At least one carrying platform 120 is disposed in the deposition chamber 110 and is suitable for carrying the wafer W5, and the center of the carrying platform 120 and the center of the wafer W5 are located on the same axis (eg Figure 3a (indicated by the dashed line in the middle);

[0054] A spraying device 130 is disposed in the deposition chamber 110 , opposite to the carrying platform 120 , and communicated with the opening 111 , and is suitable for spraying the reaction gas onto the surface of the wafer W;

[0055] The heating device 140 is disposed below the corresponding carrying platform 120 and is suitable for providing heat to the corresponding wafer W. The heating device 140 includes a plurality of heating elements (such as Figure 3b The heating elements 141a to 141f are shown, each heating element being connected to a different power source ( Figure 3a and 3b The heating elements are connected to the power supplies (not shown), and the voltage value of the power supply connected to each heating element is related to the reaction gas parameters, the resistance value of the corresponding heating element, the physical parameters of the deposited film, the distance between the deposited film and the center position of the corresponding supporting platform, the initial temperature, and the deposition time.

[0056] In the vapor deposition equipment adopting the above structure, since each heating element can be connected to a different power supply, and the voltage value of the power supply connected to each heating element is related to the reaction gas parameters, the resistance value of the corresponding heating element, the physical parameters of the deposited film, the distance between the deposited film and the center position of the corresponding supporting platform, the initial temperature, and the deposition time, different voltages can be provided for different areas of the wafer surface according to the process requirements of different areas of the wafer surface, thereby generating different heat, reducing the temperature difference between different areas of the wafer surface, making the deposition rate difference of the deposited film in different areas of the wafer surface smaller, thereby improving the uniformity of the thickness of the deposited film on the wafer surface.

[0057] The deposition process of the wafer W6 disposed on the carrying platform 121 can refer to the description of the wafer W5 , which will not be elaborated here.

[0058] It should be noted that the above example is based on the example of a vapor deposition device having two carrying platforms, which does not limit the number of carrying platforms. In actual applications, the vapor deposition device may have multiple carrying platforms, and the specific number of the carrying platforms may be determined according to specific circumstances and requirements. The embodiments of this specification do not specifically limit the number of carrying platforms.

[0059] It is to be understood that the number of heating elements in the heating device is only an example. In a specific implementation, the number of heating elements can be increased or decreased according to the heat required by the reaction gas.

[0060] In some embodiments of the present specification, based on different deposition processes, the vapor deposition equipment may be a plasma enhanced chemical vapor deposition equipment or a high density plasma chemical vapor deposition equipment.

[0061] In the specific implementation, refer to Figure 3a and 3bThe carrying platform 120 can be located on the top of the heating device 140, and its size and shape can match the wafer W5 to be carried, and is usually equal to or slightly larger than the size of the wafer W5. Therefore, the surface shape of the carrying platform 120 (ie, the top view structure) is usually circular.

[0062] Correspondingly, the surface shape of the heating device 140 is also circular. Specifically, the surface area of ​​the heating device 140 can be the same as or slightly larger than the surface area of ​​the carrying platform 120. The embodiments of this specification do not impose specific restrictions on this, as long as the carrying platform 120 can be set on the heating device 140.

[0063] It is understandable that if the wafer to be carried is of other shapes, the shapes of the carrying platform and the heating device can be adjusted accordingly. This is not strictly limited in this embodiment as long as the shapes of the three are compatible.

[0064] In a specific implementation, the material of the carrying platform 120 can match the material of the wafer W5.

[0065] For example, the material of the carrier platform can be aluminum nitride, aluminum oxide ceramics, etc., or a composite material, such as a composite structure of a metal material surface coated with chromium oxide, aluminum oxide, aluminum nitride, etc. The wafer can be fixed on the carrier platform by a pressure ring structure located above the carrier platform, or fixed on the surface of the carrier platform by electrostatic adsorption or vacuum adsorption.

[0066] In the embodiments of this specification, a carrier wafer is used as an example for description. In a specific implementation, the device on which a thin film needs to be deposited may also be a substrate, or other semiconductor structure that already has a thin film.

[0067] Furthermore, the material of the thin film deposited on the substrate is not limited, and it may be an oxide film, a nitride film, or a combination of oxide and nitride films, and the embodiments of this specification do not limit this.

[0068] In a specific implementation, there may be multiple heating elements (e.g., Figure 3b The heating elements 141a to 141f shown in the figure can generate different amounts of heat by powering the heating elements, thereby generating different temperatures on the surface of the wafer.

[0069] In some embodiments of the present specification, the voltage value of the power supply connected to each heating element is related to the reaction gas parameters, the resistance value of the corresponding heating element, the physical parameters of the deposited film, the distance between the deposited film and the center position of the corresponding supporting platform, the initial temperature, and the deposition time.

[0070] In a specific implementation, according to the aforementioned parameter values, a preset calculation method can be used to obtain the voltage value of the power supply connected to each heating element.

[0071] As a specific example, the voltage value of the power supply connected to each heating element, the reaction gas parameters, the resistance value of the corresponding heating element, the physical parameters of the deposited film, the distance between the deposited film and the center position of the corresponding supporting platform, the initial temperature, and the deposition time satisfy the following corresponding relationship:

[0072]

[0073] Among them, u is suitable for representing the voltage value of the power supply connected to the corresponding heating element; k is suitable for representing the Boltzmann constant, E a Reaction activation energy for the reaction gas, K s0 Suitable for characterizing the reaction coefficient constant, C g It is suitable for characterizing the concentration of the reaction gas, R is suitable for characterizing the resistance of the corresponding heating element, C is suitable for characterizing the specific heat capacity of the deposited film, m is suitable for characterizing the mass of the deposited film corresponding to the corresponding heating element, N is suitable for characterizing the molecular density of the deposited film, h0 is suitable for characterizing the thickness of the deposited film in the central area of ​​the supporting platform, C1 is suitable for characterizing the deviation coefficient of the deposited film, x is suitable for characterizing the distance between the deposited film and the center position of the corresponding supporting platform, T0 is suitable for characterizing the initial temperature, and t is suitable for characterizing the deposition time.

[0074] Among them, the formula of the voltage value power supply of the power supply connected to the corresponding heating element can be obtained through the following derivation process.

[0075] First, the thickness of the deposited film satisfies the following relationship:

[0076] h=v d *t (1)

[0077] Among them, h is suitable for characterizing the thickness of the deposited film, v d is suitable for characterizing the deposition rate, and t is suitable for characterizing the deposition time.

[0078] After many experiments, the inventors found that the thickness of the deposited film in each area of ​​the wafer surface is related to the distance between the deposited film and the center position of the corresponding supporting platform:

[0079]

[0080] Among them, h0 is suitable for characterizing the thickness of the deposited film in the central area of ​​the carrying platform, C1 is suitable for characterizing the deviation coefficient of the deposited film, and x is suitable for characterizing the distance between the deposited film and the center position of the corresponding carrying platform.

[0081] In some implementations of this specification, Among them, r is suitable for characterizing the radius of the wafer.

[0082] From formulas (1) and (2), we can get:

[0083]

[0084] When performing vapor deposition, there is a corresponding relationship between the temperature of each area in the deposition chamber and the deposition rate. In a specific example, the film deposition rate can be:

[0085] v d =K s0 exp(-E a / kT)*c g / N (4)

[0086] Among them, K s0 Suitable for characterizing the reaction coefficient constant of the reaction gas, E a is suitable for the reaction activation energy of the reaction gas, k is suitable for characterizing the Boltzmann constant, T is suitable for characterizing the temperature of each area in the deposition chamber, C g It is suitable for characterizing the concentration of reactive gases, and N is suitable for characterizing the molecular density of deposited films.

[0087] In the specific implementation, C g 、E a , N, K s0 can all be considered as constant parameters.

[0088] From formulas (3) and (4), we can get:

[0089]

[0090] Then the relationship between temperature and distance is derived:

[0091]

[0092] in,

[0093] Assuming that the edge temperature of the wafer is the initial temperature T0 and its radius is a constant, the temperature of each part of the wafer needs to be reduced by T (x) -T0, accordingly, the heat generated by each heating element needs to be reduced as follows:

[0094] Q (x) =C*m*(T (x) -T0) (7)

[0095] Among them, Q (x) It is suitable for characterizing the heat generation, C is suitable for characterizing the specific heat capacity of the deposited film, and m is suitable for characterizing the mass of the deposited film corresponding to the corresponding heating element.

[0096] The relationship between heat generation and power is:

[0097] Q (x) =P*t (8)

[0098] The amount of power is related to the amount of voltage applied across each resistor:

[0099]

[0100] According to the above formulas (6) to (9), we can get:

[0101]

[0102] Right now:

[0103]

[0104] The above calculation method is only an example. In the embodiments of this specification, the specific calculation method of the voltage value of the power supply connected to each heating element is not limited, as long as the corresponding power supply voltage value can be calculated based on the above parameter values.

[0105] In some embodiments of the present specification, the physical parameters of each heating element are the same. By making the physical parameters of each heating element the same, the heat generated by each heating element can be controlled by changing the voltage of the power supply connected to the corresponding heating element when other parameters remain unchanged, which is simple to operate.

[0106] Specifically, the shape, structure, mechanical structure, density, electrical parameters and other parameters of each heating element are the same, and the difference between the heating elements is only the distribution position of each heating element under the support platform.

[0107] As a specific example, the heating element may be a resistor in one or more shapes of wire, sheet, plate, mesh, disc, tube, rod, cylinder, cloth, ribbon or other shapes.

[0108] And the layout of each heating element in the heating device can be different according to the structure of the heating element. For example, if the heating element is in the form of a sheet or a strip, the heating elements can be symmetrically distributed.

[0109] The material of the heating element can be nickel-chromium, nickel-chromium-iron alloy, iron-chromium-aluminum alloy, platinum, tantalum, niobium, tungsten, molybdenum or other metals or alloys, or non-metallic materials including silicon carbide, molybdenum dioxide, graphite, aluminum oxide and aluminum nitride, or a combination of multiple materials.

[0110] The embodiments of this specification do not limit the specific structure, material, etc. of the heating elements, as long as the heating elements are the same.

[0111] In some other examples of the present specification, the physical parameters of the heating elements may be partially the same or completely different.

[0112] In a specific implementation, each heating element may be located on the same horizontal plane, that is, each heating element has the same distance from the lower surface of the carrying platform.

[0113] For example, continue to refer to Figure 3b , the vertical distances between the heating elements 141a to 141f and the carrying platform 120 are all the same. In this way, when the voltage coefficient is determined, the voltage value of the power supply can be determined only according to the distance value between the heating element and the center position of the corresponding carrying platform.

[0114] In an optional example, the heating elements 141 a to 141 f may be directly disposed on the lower surface of the carrying platform 120 , that is, the vertical distance between the heating elements 141 a to 141 f and the carrying platform 120 is 0.

[0115] In the specific implementation, combined with Figure 3b , and refer to Figure 4 The heating elements are distributed in a circular array below the carrying platform 120 .

[0116] By distributing the heating elements in a circular array under the supporting platform, the heating elements can be distributed more evenly and the heat generated can be more evenly distributed, thereby making the temperature distribution between different areas on the wafer surface more even, reducing the temperature difference and further improving the uniformity of the thickness of the deposited film on the wafer surface.

[0117] Continue to refer to Figure 4 When the heating elements E are distributed in a circular array, some of the heating elements E are at the same distance from the center of the carrying platform 120. For the heating elements E at the same distance from the center of the carrying platform 120, they can be connected to the same power supply at the same time, thereby simplifying the power supply structure.

[0118] Therefore, the voltage value of the power supply connected to each heating element, the reaction gas parameters, the resistance value of the corresponding heating element, the physical parameters of the deposited film, the distance between the deposited film and the center position of the corresponding supporting platform, the initial temperature, and the deposition time can determine the power supply voltage value of the corresponding heating element, thereby reducing the temperature difference between different areas on the wafer surface, so that the deposition rate difference of the deposited film in different areas on the wafer surface is smaller.

[0119] For example, refer to Figure 5 The schematic diagram of the thin film deposition on the wafer surface in the embodiment of this specification is as follows: Figure 5 As shown, the thickness of the thin film 31 deposited on the surface of the wafer 30 is the same as Figure 2Compared with the deposited film thickness shown in the figure, it has better uniformity.

[0120] In some embodiments of this specification, continue to refer to Figure 3b The heating device 140 may further include a wire 144, through which each heating element can be connected to a power source.

[0121] Since the heating element will generate a large amount of heat during operation, a relatively high temperature will be generated in the deposition chamber. After the deposition process is completed, the temperature in the deposition chamber is still relatively high. For this reason, the heating device 140 in the embodiment of this specification may further include a cooling module 143. Through the cooling module 143, heat dissipation can be accelerated and the temperature in the deposition chamber can be quickly reduced.

[0122] In a specific implementation, the cooling module may be a cooling tube, the cooling tube is filled with a cooling substance, and the cooling substance includes one or both of a cooling liquid or a cooling fluid.

[0123] In practical applications, the heating device 140 may further include a protective layer 142 , which is located on the outside of the cooling module 143 to prevent the wiring inside the carrier platform from being damaged during the deposition process.

[0124] In a specific implementation, in order to reduce the mutual transfer of heat generated by different heating elements, an insulating ring for heat insulation can be provided between adjacent heating elements or the elements can be filled with insulating materials.

[0125] In some embodiments of this specification, Figure 3a , refer to Figure 6 The spraying device 130 may include: a gas channel 131 and a plurality of nozzles (such as Figure 6 Schematic diagram of the nozzles N1-N24), wherein: the gas channel 131 is connected to the opening 111, and has a gas supply port 132, and the gas supply port 132 is connected to each nozzle.

[0126] In a specific implementation, the reaction gas may enter the spraying device 130 through the opening 111 . Since the opening 111 may be connected to the gas supply port 132 , the reaction gas may be sprayed onto the surface of the wafer through the nozzles N1 - N24 .

[0127] In a specific implementation, each nozzle can be evenly arranged inside the gas channel, which can improve the consistency of spraying the reaction gas and further improve the uniformity of the thin film deposited on the wafer surface.

[0128] In some embodiments of this specification, when the deposition process is completed or new reaction gas needs to be input, the gas remaining in the deposition chamber needs to be exhausted. Figure 3aThe bottom of the deposition chamber 110 is provided with an exhaust port 150 to discharge the reacted gas.

[0129] It is understandable that, according to specific application scenarios and requirements, the vapor deposition equipment provided in the embodiments of this specification can be adaptively selected and / or deformed. For example, the number of some components in the vapor deposition equipment can be changed; for example, the size of some components in the vapor deposition equipment can be adjusted; for example, some components in the vapor deposition equipment can be replaced equally, etc. Based on this, more implementation schemes of the filtering device can be extended, and the embodiments of this specification do not limit these extended schemes.

[0130] As an optional example, the vapor deposition equipment provided in the embodiments of this specification may further include a gas flow control device, which is suitable for controlling the flow of the reaction gas entering the deposition chamber.

[0131] Wherein, the gas flow control device may include: a gas supply module, suitable for providing the reaction gas; and a control module, coupled to the gas supply module, suitable for controlling the gas supply flow of the gas supply module.

[0132] In some embodiments of the present specification, the gas supply module can provide one or more reaction gases.

[0133] As another optional example, the vapor deposition equipment provided in the embodiments of this specification may further include a vacuum device, which is connected to the deposition chamber and is suitable for providing a vacuum environment for the deposition chamber.

[0134] The vacuum device may be a vacuum pump. Before the deposition process is performed, the vacuum pump may be used to extract the gas in the deposition chamber.

[0135] Although the embodiments of this specification are disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention, so the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. A vapor deposition device, characterized in that: include: The deposition chamber has an opening at the top for inputting reaction gas; At least one carrying platform, disposed in the deposition chamber, suitable for carrying a wafer, and the center of the carrying platform and the center of the wafer are located on the same axis; A spraying device is disposed in the deposition chamber, opposite to the carrying platform and communicated with the opening, and is suitable for spraying the reaction gas onto the surface of the wafer to form a deposition film on the surface of the wafer; A heating device is arranged under the corresponding supporting platform and is suitable for providing heat for the corresponding wafer; the heating device includes multiple heating elements, each heating element is connected to a different power supply, and the voltage value of the power supply connected to each heating element is related to the reaction gas parameters, the resistance value of the corresponding heating element, the physical parameters of the deposited film, the distance between the deposited film and the center position of the corresponding supporting platform, the initial temperature, and the deposition time.

2. The vapor deposition apparatus according to claim 1, characterized in that: The voltage value of the power supply connected to each heating element, the reaction gas parameters, the resistance value of the corresponding heating element, the physical parameters of the deposited film, the distance between the deposited film and the center position of the corresponding supporting platform, the initial temperature, and the deposition time satisfy the following corresponding relationship: Among them, u is suitable for representing the voltage value of the power supply connected to the corresponding heating element; k is suitable for representing the Boltzmann constant, E a Reaction activation energy for the reaction gas, K s0 Suitable for characterizing the reaction coefficient constant, C g It is suitable for characterizing the concentration of the reaction gas, R is suitable for characterizing the resistance of the corresponding heating element, C is suitable for characterizing the specific heat capacity of the deposited film, m is suitable for characterizing the mass of the deposited film corresponding to the corresponding heating element, N is suitable for characterizing the molecular density of the deposited film, h0 is suitable for characterizing the thickness of the deposited film in the central area of ​​the supporting platform, C1 is suitable for characterizing the deviation coefficient of the deposited film, x is suitable for characterizing the distance between the deposited film and the center position of the corresponding supporting platform, T0 is suitable for characterizing the initial temperature, and t is suitable for characterizing the deposition time.

3. The vapor deposition apparatus according to claim 1, characterized in that: The physical parameters of each heating element are identical.

4. The vapor deposition apparatus according to claim 1, characterized in that: The heating elements are distributed in a circular array below the carrying platform.

5. The vapor deposition apparatus according to claim 1, characterized in that: The spraying device comprises: a gas channel and a plurality of nozzles arranged in the gas channel, wherein: the gas channel is connected with the opening and has a gas supply port, and the gas supply port is connected with each nozzle.

6. The vapor deposition apparatus according to claim 5, characterized in that: The nozzles are evenly arranged inside the gas channel.

7. The vapor deposition device according to claim 1, characterized in that: The bottom of the deposition chamber is provided with an exhaust port to exhaust the reacted gas.

8. The vapor deposition apparatus according to claim 1, characterized in that: Also includes: The gas flow control device is suitable for controlling the flow of the reaction gas entering the deposition chamber.

9. The vapor deposition device according to claim 8, characterized in that: The gas flow control device comprises: A gas supply module, adapted to provide the reaction gas; The control module is coupled to the air supply module and is suitable for controlling the air supply flow of the air supply module.

10. The vapor deposition apparatus according to claim 1, characterized in that: Also includes: The vacuum device is connected with the deposition chamber and is suitable for providing a vacuum environment for the deposition chamber.

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