Method for preparing conductive thin film by pre-burying electrode, conductive thin film and application of conductive thin film

Abstract

The invention relates to the technical field of conductive materials, in particular to a method for preparing a conductive thin film through an embedded electrode, the conductive thin film and application of the conductive thin film. The method adopts the mode that the electrode is embedded before a stock solution of a conductive thin film base material is completely cross-linked, cured and formed; heating to a partial cross-linking curing state, and then placing an electrode; or, an electrode is placed on the supporting base, and then the stock solution of the conductive film base material is sprayed; and then heating until complete cross-linking, curing and molding to obtain the conductive film. Compared with the prior art that the electrode is formed on the surface of the formed conductive film base material in a printing or electroplating or metal foil attaching mode, the method has the advantages of continuous preparation process, simple process, high production efficiency, low cost and suitability for large-scale production, the electrode and the conductive film base material are tightly combined, the binding force is strong, and the service life of the electrode and the conductive film base material is prolonged. Even if used for a long time at a high temperature, the coating is not easy to fall off, can avoid air contact and has a good application prospect.

Description

Technical Field

[0001] The present invention relates to the technical field of conductive materials, and in particular to a method for preparing a conductive film with a pre-buried electrode, the conductive film and applications thereof. Background Art

[0002] Conductive film is a thin film material with a certain conductivity. Due to its unique properties, it has been widely used in the modern electronics industry. At present, conductive film can be used in thermal conductive materials, sensor materials, solar cell materials, etc.

[0003] The structure of the conductive film is generally composed of a polymer conductive film substrate and an electrode. In the prior art, the preparation of the conductive film is usually to first use the reactants of the polymer material and the nano-scale / micron-scale conductive material to form a conductive film substrate, and then form an electrode on the surface of the formed conductive film substrate by printing or electroplating or metal foil attachment. The preparation technology of this conductive film in the prior art is divided into two preparation processes, one is the forming process of the conductive film substrate, and the other is the printing or electroplating or metal foil attachment process of the electrode. It can be seen that the process of preparing the conductive film in the prior art is cumbersome, and the production of the entire conductive film is discontinuous and requires two independent processes. Therefore, there are defects such as complex process and relatively low production efficiency.

[0004] In addition, the bonding force between the electrode formed by the preparation process of the conductive film in the prior art and the conductive film substrate is not very strong, the bonding is not firm, and it is easy to fall off, especially when repeatedly heated at high temperature. Due to the difference in thermal expansion and contraction rates of different substrates, the electrode is more likely to fall off after long-term use. Moreover, for metal electrodes, if the formed electrode is directly exposed on the surface of the conductive film substrate, the electrode is easily oxidized during long-term use, affecting product performance. Summary of the invention

[0005] In order to overcome the shortcomings of the prior art, the first purpose of the present invention is to provide a method for preparing a conductive film by pre-embedded electrodes, which method for preparing a conductive film by pre-embedded electrodes can make the entire preparation process continuous, the process is simple, the production efficiency is high, the cost is reduced, and the electrode is tightly combined with the conductive film substrate with strong bonding force and is not easy to fall off, and the problem of decreased conductivity of the electrode oxidant caused by contact of the electrode with the air can be avoided.

[0006] In order to overcome the shortcomings of the prior art, the second object of the present invention is to provide a conductive film, in which the electrodes are tightly combined with the conductive film substrate, have strong bonding force, and are not easy to fall off.

[0007] In order to overcome the deficiencies of the prior art, the third object of the present invention is to provide an application of a conductive film.

[0008] In order to achieve the first object of the above invention, the technical solution adopted by the present invention is as follows:

[0009] The present invention provides a method for preparing a conductive film by pre-embedded electrodes, comprising the following steps:

[0010] S1. Placing electrodes before the original liquid of the conductive film substrate is completely cross-linked and cured: first, apply the original liquid of the conductive film substrate on the support base, heat it to a partially cross-linked and cured state, and then place the electrodes; or, first place the electrodes on the support base, and then spray the original liquid of the conductive film substrate;

[0011] S2, heating until the substrate is completely cross-linked and cured to obtain the conductive film.

[0012] The present invention discloses a method for preparing a conductive film by pre-embedded electrodes, which adopts a method of pre-embedded electrodes before the original solution of the conductive film substrate is completely cross-linked and solidified. Compared with the prior art method of forming electrodes on the surface of a pre-formed conductive film substrate by printing, electroplating or metal foil attachment, the whole preparation process can be continuous, the process is simple, the production efficiency is high, the cost is reduced, and the electrode is tightly combined with the conductive film substrate, the bonding force is strong, and it is not easy to fall off, and the problem of decreased conductivity of the electrode oxidant caused by the electrode contacting the air can be avoided.

[0013] Furthermore, in the step S1, an insulating film or a raw liquid of a coating insulating film substrate is first placed on the supporting base and heated to a partially cross-linked and solidified state, and then a raw liquid of a conductive film substrate is coated on the insulating film and heated to a partially cross-linked and solidified state, and then an electrode is placed; or, an insulating film or a raw liquid of a coating insulating film substrate is first placed on the supporting base and heated to a partially cross-linked and solidified state, and then an electrode is placed on the insulating film, and then the raw liquid of the conductive film substrate is sprayed.

[0014] Furthermore, in the step S1, an insulating film or a coating of an insulating film substrate is first placed on the supporting base and heated to a partially cross-linked and cured state, and then a conductive film substrate is coated with a solution and heated to a partially cross-linked and cured state, and then an electrode is placed, and then the insulating film substrate solution is sprayed; or, an insulating film or a coating of an insulating film substrate is first placed on the supporting base and heated to a partially cross-linked and cured state, and then an electrode is placed on the insulating film, and then the conductive film substrate solution is sprayed, and heated to a partially cross-linked and cured state, and then the insulating film substrate solution is sprayed.

[0015] Preferably, the insulating film placed on the support base is a polyimide insulating film, which has the property of high temperature resistance and will not be damaged when the conductive film substrate is subsequently heated to completely cross-link and solidify.

[0016] Furthermore, in step S1, the original solution of the conductive film substrate is first coated on the supporting base and heated to a partially cross-linked and cured state, and then the electrode is placed, and then the original solution of the insulating film substrate is sprayed; or, the electrode is first placed on the supporting base, and then the original solution of the conductive film substrate is sprayed, and then heated to a partially cross-linked and cured state, and then the original solution of the insulating film substrate is sprayed.

[0017] Furthermore, in step S1, the coating is performed by brushing or spraying; and / or

[0018] During the placement of the electrode, the electrode is placed into the partially cross-linked and cured conductive film substrate by applying pressure; preferably, the applied pressure is uniform, thereby facilitating the improvement of the conductive properties of the conductive film. And / or

[0019] The electrode is one or both of a non-metallic high-conductivity electrode and a metal electrode; and / or

[0020] The non-metallic high-conductivity electrode is one or more of a carbon fiber film, a carbon nanotube film, a graphene film or a carbon film; preferably, the surface of the non-metallic high-conductivity electrode is a rough surface, wherein the carbon fiber film is a carbon fiber film formed by winding multiple strands of carbon fibers, and the surface of the carbon nanotube film, the graphene film or the carbon film is also roughened, so that the original liquid of the conductive film substrate or the original liquid of the insulating film substrate can better completely infiltrate the non-metallic high-conductivity electrode, so that when the polymer is heated and cross-linked to form a high molecular weight polymer, the non-metallic high-conductivity electrode can be firmly combined with the conductive film substrate or the insulating film substrate without phase separation, and is very strong. In addition, preferably, the surface of the metal electrode is also a rough surface, which can enhance the interfacial bonding force between the metal electrode and the conductive film substrate or the insulating film substrate.

[0021] and / or

[0022] The metal electrode is one or more of a copper electrode, a silver electrode, an aluminum electrode, a platinum electrode, a gold electrode or a palladium electrode.

[0023] Furthermore, the conductive film substrate is a polyimide film having conductive properties; wherein the conductive substance is uniformly dispersed in the polyimide material in a physically combined manner; and / or

[0024] The stock solution of the conductive film substrate comprises the following components: dibasic acid anhydride, diamine, conductive substance and organic solvent; wherein the dibasic acid anhydride, diamine and conductive substance are uniformly dispersed in the organic solvent to form the stock solution of the conductive film substrate; when the stock solution of the conductive film substrate is coated and then heated, the dibasic acid anhydride and the diamine form a polyimide with a cross-linked network structure through a nucleophilic addition reaction, and the conductive substance is uniformly dispersed in the cross-linked network structure; when heated to a partially cross-linked and cured state, an electrode is placed on the partially cross-linked and cured network structure, and then further heated to form a completely cross-linked and cured network structure, so that the electrode can be interwoven in the cross-linked network structure, thereby making the electrode and the conductive film substrate tightly bonded, having a strong bonding force, not easy to fall off, and avoiding the problem of decreased conductivity of the electrode oxidant caused by contact of the electrode with air; and / or

[0025] The dibasic acid anhydride is at least one of an aromatic dibasic acid anhydride, a semi-aromatic dibasic acid anhydride or an aliphatic dibasic acid anhydride; and / or the dibasic acid anhydride is at least one of succinic anhydride, maleic anhydride, phthalic anhydride or glutaric anhydride; and / or

[0026] The diamine includes at least one of aromatic diamine, semi-aromatic diamine or aliphatic diamine, and / or includes at least one of ethylenediamine, propylenediamine, hexamethylenediamine or p-phenylenediamine; and / or

[0027] The conductive material is at least one of carbon nanotubes, graphene, and conductive carbon black; and / or

[0028] The organic solvent is at least one of N,N-dimethylformamide, N,N-dimethylacetamide or N-methylpyrrolidone; and / or

[0029] The molar ratio of the dibasic acid anhydride to the diamine is 1:1; and / or the mass percentage of the conductive substance in the dry film of the conductive film substrate is 1% to 40%; and / or the solid content of the original solution of the conductive film substrate is 4% to 8%.

[0030] Furthermore, the insulating film substrate is polyimide; wherein, since the insulating film substrate is polyimide, the insulating film substrate has the property of high temperature resistance, and when the conductive film substrate is subsequently heated to completely cross-link and solidify, the insulating film substrate will not be damaged. And / or

[0031] The stock solution of the insulating film substrate comprises the following components: dibasic acid anhydride, diamine and organic solvent;

[0032] The dibasic acid anhydride and the diamine are uniformly dispersed in an organic solvent to form a stock solution of an insulating film substrate. When the stock solution of the insulating film substrate is coated and then heated, the dibasic acid anhydride and the diamine form a polyimide with a cross-linked network structure through a nucleophilic addition reaction.

[0033] and / or

[0034] The molar ratio of the dibasic acid anhydride to the diamine is 1:1; and / or the solid content of the stock solution of the insulating film substrate is 3% to 10%.

[0035] Furthermore, in the step S1, the temperature of heating to the partially cross-linked and cured state is 195° C. to 205° C.; and / or

[0036] The support base is a polyimide film, a steel belt or a glass plate; and / or, the support base is placed on a transmission device and driven for transmission; wherein the polyimide support film, steel belt or glass plate are all resistant to high temperatures and can be protected from damage during the subsequent heating and curing of the conductive film substrate. When the support base is a polyimide film, the polyimide film can be used as an insulating layer of the conductive film of the prepared product to form the product together, or it can be torn off and not used as part of the conductive film product; when the support base is a steel belt or a glass plate, the original liquid of the insulating film substrate can be coated on the steel belt or the glass plate or an insulating film can be placed so that the conductive film on this side has an insulating layer. In addition, the support base is placed on a transmission device and driven for transmission, which can facilitate large-scale production, and facilitate each process in the preparation process to be more continuous, thereby improving production efficiency.

[0037] and / or

[0038] In the step S2, the temperature at which the substrate is heated to be completely cross-linked and cured is 350°C to 405°C.

[0039] In order to achieve the second purpose of the above invention, the technical solution adopted by the present invention is as follows:

[0040] The present invention provides a conductive film, which is prepared by the above-mentioned method for preparing a conductive film by embedding an electrode.

[0041] The conductive film of the present invention has electrodes embedded in advance before the original solution of the conductive film substrate is completely cross-linked and solidified, so the electrodes can be tightly combined with the conductive film substrate with strong bonding force and are not easy to fall off.

[0042] In order to achieve the third purpose of the above invention, the technical solution adopted by the present invention is as follows:

[0043] The present invention provides an application of a conductive film, wherein the conductive film is applied to prepare a heating film, a thin film sensor, a thin film functional switch, a touch screen, a display or a battery.

[0044] Among them, since the conductive film prepared by the present invention has a tight bond between the electrode and the conductive film substrate, has a strong bonding force and is not easy to fall off, the conductive film has the advantages of good electrical and thermal conductivity, high temperature resistance and long service life when used to prepare heating films, thin film sensors, thin film functional switches, touch screens, displays or batteries.

[0045] Compared with the prior art, the present invention has the following beneficial effects:

[0046] (1) The method of preparing a conductive film by embedding an electrode in the present invention adopts a method of embedding an electrode before the original liquid of the conductive film substrate is completely cross-linked and solidified, by first coating the original liquid of the conductive film substrate on the support base, heating it to a partially cross-linked and solidified state, and then placing the electrode; or, first placing the electrode on the support base, and then spraying the original liquid of the conductive film substrate; and then heating it until the substrate is completely cross-linked and solidified to prepare the conductive film. Compared with the prior art method of forming an electrode on the surface of a pre-formed conductive film substrate by printing, electroplating or metal foil attachment, the present invention can make the entire preparation process continuous, simple, high in production efficiency, and low in cost, and can be suitable for large-scale production, and the electrode and the conductive film substrate are tightly combined, with strong bonding force and not easy to fall off, and can avoid the problem of decreased conductivity of the electrode oxidant caused by the electrode contacting the air.

[0047] (2) The method for preparing a conductive film by pre-embedded electrodes of the present invention can make the electrode firmly bonded to the conductive film substrate. Even after long-term treatment at high temperature, the electrode will not separate, and there is no phase separation at all. Therefore, the conductive film prepared by the method for preparing a conductive film by pre-embedded electrodes of the present invention can improve the electrical and thermal conductivity and has a good application prospect.

[0048] (3) The conductive film of the present invention is prepared by pre-embedding the electrodes before the stock solution of the conductive film substrate is completely cross-linked and solidified. Since the electrodes are pre-embedded before the stock solution of the conductive film substrate is completely cross-linked and solidified, the electrodes can be tightly combined with the conductive film substrate, have strong bonding force, and are not easy to fall off. In addition, since the prepared electrodes are buried inside the substrate, the electrodes are prevented from being exposed to the air, and thus are not easily oxidized when metal electrodes are used.

[0049] (4) Application of a conductive film of the present invention, the conductive film is used to prepare a heating film, a thin film sensor, a thin film function switch, a touch screen, a display or a battery. Since the conductive film prepared by the present invention has a tight bond between the electrode and the conductive film substrate, has a strong bond, is not easy to fall off, and can avoid the problem of decreased conductivity of the electrode oxidant caused by the electrode contacting the air, the conductive film has the advantages of good electrical and thermal conductivity, high temperature resistance and long service life when used to prepare a heating film, a thin film sensor, a thin film function switch, a touch screen, a display or a battery. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0051] Figure 1 It is a schematic diagram of the process flow of a method for preparing a conductive film with a pre-buried electrode according to Example 1 of the present invention.

[0052] Figure 2 It is a schematic diagram of the process flow of a method for preparing a conductive film with a pre-buried electrode according to Example 2 of the present invention.

[0053] Figure 3 It is a schematic diagram of the process flow of a method for preparing a conductive film with a pre-buried electrode according to Example 3 of the present invention.

[0054] Figure 4 It is a schematic diagram of the process flow of a method for preparing a conductive film with a pre-buried electrode according to Example 4 of the present invention.

[0055] Figure 5 It is a schematic diagram of the process flow of a method for preparing a conductive film with a pre-buried electrode according to Example 5 of the present invention.

[0056] Figure 6 It is a schematic diagram of the process flow of a method for preparing a conductive film with a pre-buried electrode according to Example 6 of the present invention.

[0057] Figure 7 It is a schematic diagram of the process flow of a method for preparing a conductive film with a pre-buried electrode according to Example 7 of the present invention.

[0058] Figure 8 It is a schematic diagram of the process flow of a method for preparing a conductive film with a pre-buried electrode according to Example 8 of the present invention.

[0059] Fig. 9 It is a schematic diagram of the process flow of a method for preparing a conductive film with a pre-buried electrode according to Example 9 of the present invention.

[0060] Fig.10 It is a schematic diagram of the process flow of a method for preparing a conductive film with a pre-buried electrode according to Example 10 of the present invention.

[0061] Fig.11 It is a schematic diagram of the process flow of a method for preparing a conductive film with a pre-buried electrode according to Example 11 of the present invention.

[0062] Fig.12 It is a schematic diagram of the process flow of a method for preparing a conductive film with a pre-buried electrode according to Example 12 of the present invention.

[0063] Fig.13 This is a photo of a conductive film obtained in Example 6 of the present invention, showing one side of the conductive film substrate.

[0064] Fig.14 This is a photograph of a conductive film obtained in Example 6 of the present invention, and shows one side of the insulating film substrate.

[0065] Fig.15 This is a SEM image of the cross section of a conductive film obtained by a method for preparing a conductive film with a pre-buried electrode according to Example 1 of the present invention after high-temperature treatment.

[0066] Fig.16 This is a SEM image of the cross section of a conductive film obtained by a method for preparing a conductive film with a pre-buried electrode according to Example 5 of the present invention after high-temperature treatment. DETAILED DESCRIPTION

[0067] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention more clearly understood, the present invention is further described in detail below in conjunction with the embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0068] The terms used in the embodiments of the present invention are only for the purpose of describing specific embodiments, and are not intended to limit the present invention. In the present invention, the singular forms "a", "said", "the", "first" and "second" used in the embodiments and the appended claims are also intended to include plural forms, unless the context clearly indicates other meanings.

[0069] The following describes the invention in conjunction with specific embodiments.

[0070] Example 1

[0071] A method for preparing a conductive film by embedding electrodes in this embodiment, please refer to Figure 1 , including the following steps:

[0072] S1. Placing electrodes before the original liquid of the conductive film substrate is completely cross-linked and cured: first spray the original liquid of the conductive film substrate on the polyimide film, and heat the original liquid of the conductive film substrate to 200° C. to form a partially cross-linked and cured state, and then place a graphene film electrode on the conductive film substrate in the partially cross-linked and cured state;

[0073] S2. Then, the conductive film substrate with the graphene film electrode placed thereon is further heated to 400° C. to form a completely cross-linked and cured shape, thereby obtaining a conductive film.

[0074] In this embodiment, the conductive film substrate is a polyimide dispersed with a conductive substance, wherein the stock solution of the conductive film substrate includes the following components: a dibasic acid anhydride, a diamine, a conductive substance and an organic solvent; wherein the dibasic acid anhydride, the diamine and the conductive substance are uniformly dispersed in an organic solvent to form a stock solution of the conductive film substrate, and when the stock solution of the conductive film substrate is heated after spraying, the dibasic acid anhydride and the diamine form a polyimide with a cross-linked network structure through a nucleophilic addition reaction.

[0075] In this embodiment, in the stock solution of the conductive film substrate, the dibasic acid anhydride is succinic anhydride; the diamine ethylenediamine; the conductive material is graphene; and the organic solvent is N,N-dimethylformamide.

[0076] In this embodiment, the molar ratio of dibasic acid anhydride to diamine in the stock solution of the conductive film substrate is 1:1; the mass percentage of the conductive substance in the dry film of the conductive film substrate is 20%; and the solid content of the stock solution of the conductive film substrate is 6%.

[0077] Example 2

[0078] A method for preparing a conductive film by embedding electrodes in this embodiment, please refer to Figure 2 , including the following steps:

[0079] S1. Placing electrodes before the original liquid of the conductive film substrate is completely cross-linked and cured: firstly placing the carbon nanotube film electrode on the polyimide film, and then spraying the original liquid of the conductive film substrate on the polyimide substrate on which the carbon nanotube film electrode is placed;

[0080] S2. Then, the temperature is heated to 395° C. to completely cross-link and solidify the original liquid of the conductive film substrate, thereby obtaining a conductive film.

[0081] In this embodiment, the conductive film substrate is a polyimide dispersed with a conductive substance, wherein the stock solution of the conductive film substrate includes the following components: a dibasic acid anhydride, a diamine, a conductive substance and an organic solvent; wherein the dibasic acid anhydride, the diamine and the conductive substance are uniformly dispersed in an organic solvent to form a stock solution of the conductive film substrate, and when the stock solution of the conductive film substrate is heated after spraying, the dibasic acid anhydride and the diamine form a polyimide with a cross-linked network structure through a nucleophilic addition reaction.

[0082] In this embodiment, in the stock solution of the conductive film substrate, the dibasic acid anhydride is maleic anhydride; the diamine is propylenediamine; the conductive material is carbon nanotubes; and the organic solvent is N,N-dimethylacetamide.

[0083] In this embodiment, in the stock solution of the conductive film substrate, the molar ratio of dibasic acid anhydride to diamine is 1:1; the mass percentage of the conductive substance in the dry film of the conductive film substrate is 1%; and the solid content of the stock solution of the conductive film substrate is 4%.

[0084] Example 3

[0085] A method for preparing a conductive film by embedding electrodes in this embodiment, please refer to Figure 3 , including the following steps:

[0086] S1. Placing electrodes before the original liquid of the conductive film substrate is completely cross-linked and cured: first, placing an insulating film on the steel strip, then brushing the original liquid of the conductive film substrate on the insulating film, and heating the original liquid of the conductive film substrate to 195° C. to form a partially cross-linked and cured state, and then placing a carbon fiber film electrode in the partially cross-linked and cured conductive film substrate; in this embodiment, during the process of placing the electrode, pressure is applied so that the electrode is placed in the partially cross-linked and cured conductive film substrate;

[0087] S2. Then, the conductive film substrate with the carbon fiber membrane electrode placed therein is further heated to 395° C. to form a completely cross-linked and cured shape, thereby obtaining a conductive film.

[0088] In this embodiment, the conductive film substrate is a polyimide dispersed with a conductive substance, wherein the stock solution of the conductive film substrate includes the following components: a dibasic acid anhydride, a diamine, a conductive substance and an organic solvent; wherein the dibasic acid anhydride, the diamine and the conductive substance are uniformly dispersed in an organic solvent to form a stock solution of the conductive film substrate, and when the stock solution of the conductive film substrate is heated after spraying, the dibasic acid anhydride and the diamine form a polyimide with a cross-linked network structure through a nucleophilic addition reaction.

[0089] In this embodiment, in the stock solution of the conductive film substrate, the dibasic acid anhydride is phthalic anhydride; the diamine is hexamethylenediamine; the conductive substance is conductive carbon black; and the organic solvent is N-methylpyrrolidone.

[0090] In this embodiment, in the stock solution of the conductive film substrate, the molar ratio of dibasic acid anhydride to diamine is 1:1; the mass percentage of the conductive substance in the dry film of the conductive film substrate is 40%; and the solid content of the stock solution of the conductive film substrate is 8%.

[0091] In this embodiment, the insulating film is a polyimide insulating film, which has the characteristic of high temperature resistance and can not be damaged during the subsequent heating and curing to form the conductive film substrate.

[0092] Example 4

[0093] A method for preparing a conductive film by embedding electrodes in this embodiment, please refer to Figure 4 , including the following steps:

[0094] S1. The original liquid of the conductive film substrate is completely cross-linked and cured before the electrode is placed: first, the original liquid of the insulating film substrate is brushed on the glass plate, and then the original liquid of the insulating film substrate is heated to 198°C to form a partially cross-linked and cured state, and then the original liquid of the conductive film substrate is sprayed on the insulating film substrate, and the original liquid of the conductive film substrate is heated to 198°C to form a partially cross-linked and cured state, and then the carbon film electrode is placed;

[0095] S2. Then, the conductive film substrate on which the carbon film electrode is placed is further heated to 398° C. to form a completely cross-linked and cured shape, thereby obtaining a conductive film.

[0096] In this embodiment, the conductive film substrate is a polyimide dispersed with a conductive substance, wherein the stock solution of the conductive film substrate includes the following components: a dibasic acid anhydride, a diamine, a conductive substance and an organic solvent; wherein the dibasic acid anhydride, the diamine and the conductive substance are uniformly dispersed in an organic solvent to form a stock solution of the conductive film substrate, and when the stock solution of the conductive film substrate is heated after spraying, the dibasic acid anhydride and the diamine form a polyimide with a cross-linked network structure through a nucleophilic addition reaction.

[0097] In this embodiment, in the stock solution of the conductive film substrate, the dibasic acid anhydride is glutaric anhydride; the diamine is p-phenylenediamine; the conductive material is carbon nanotubes; and the organic solvent is N,N-dimethylformamide.

[0098] In this embodiment, in the stock solution of the conductive film substrate, the molar ratio of dibasic acid anhydride to diamine is 1:1; the mass percentage of the conductive substance in the dry film of the conductive film substrate is 10%; and the solid content of the stock solution of the conductive film substrate is 5%.

[0099] In this embodiment, the insulating film substrate is polyimide; the stock solution of the insulating film substrate includes the following components: dibasic acid anhydride, diamine and organic solvent; wherein the dibasic acid anhydride and the diamine are uniformly dispersed in the organic solvent to form the stock solution of the insulating film substrate, and when the stock solution of the insulating film substrate is coated and then heated, the dibasic acid anhydride and the diamine form a polyimide insulating film substrate with a cross-linked network structure through a nucleophilic addition reaction.

[0100] In this embodiment, in the stock solution of the insulating film substrate, the molar ratio of the dibasic acid anhydride to the diamine is 1:1; the dibasic acid anhydride is glutaric anhydride; the diamine is p-phenylenediamine; the organic solvent is N,N-dimethylformamide; and the solid content of the stock solution of the insulating film substrate is 3% to 10%.

[0101] Example 5

[0102] A method for preparing a conductive film by embedding electrodes in this embodiment, please refer to Figure 5 , including the following steps:

[0103] S1. The original liquid of the conductive film substrate is completely cross-linked and solidified before the electrode is placed: first, an insulating film is placed on the glass plate, and then a graphene film electrode is placed on the insulating film, and then the original liquid of the conductive film substrate is sprayed on the insulating film with the graphene film electrode placed;

[0104] S2. Then, the mixture is heated to 400° C. to completely cross-link and solidify the original liquid of the conductive film substrate, thereby obtaining a conductive film.

[0105] In this embodiment, the conductive film substrate is a polyimide dispersed with a conductive substance, wherein the stock solution of the conductive film substrate includes the following components: a dibasic acid anhydride, a diamine, a conductive substance and an organic solvent; wherein the dibasic acid anhydride, the diamine and the conductive substance are uniformly dispersed in an organic solvent to form a stock solution of the conductive film substrate, and when the stock solution of the conductive film substrate is heated after spraying, the dibasic acid anhydride and the diamine form a polyimide with a cross-linked network structure through a nucleophilic addition reaction.

[0106] In this embodiment, in the stock solution of the conductive film substrate, the dibasic acid anhydride is maleic anhydride; the diamine is p-phenylenediamine; the conductive material is graphene; and the organic solvent is N,N-dimethylformamide.

[0107] In this embodiment, in the stock solution of the conductive film substrate, the molar ratio of dibasic acid anhydride to diamine is 1:1; the mass percentage of the conductive substance in the dry film of the conductive film substrate is 25%; and the solid content of the stock solution of the conductive film substrate is 5%.

[0108] In this embodiment, the insulating film is a polyimide insulating film, which has the characteristic of high temperature resistance and can not be damaged during the subsequent heating and curing to form the conductive film substrate.

[0109] Example 6

[0110] A method for preparing a conductive film by embedding electrodes in this embodiment, please refer to Figure 6 , including the following steps:

[0111] S1. Placing electrodes before the original liquid of the conductive film substrate is completely cross-linked and cured: first spray the original liquid of the insulating film substrate on the glass plate, then heat the original liquid of the insulating film substrate to 202° C. to form a partially cross-linked and cured state, then place a graphene film electrode on the partially cross-linked and cured insulating film substrate, and then spray the original liquid of the conductive film substrate on the insulating film substrate with the graphene film electrode placed;

[0112] S2. Then, the mixture is heated to 402° C. so that the original solution of the insulating film substrate and the original solution of the conductive film substrate are completely cross-linked and solidified to obtain a conductive film.

[0113] In this embodiment, the conductive film substrate is a polyimide dispersed with a conductive substance, wherein the stock solution of the conductive film substrate includes the following components: a dibasic acid anhydride, a diamine, a conductive substance and an organic solvent; wherein the dibasic acid anhydride, the diamine and the conductive substance are uniformly dispersed in an organic solvent to form a stock solution of the conductive film substrate, and when the stock solution of the conductive film substrate is heated after spraying, the dibasic acid anhydride and the diamine form a polyimide with a cross-linked network structure through a nucleophilic addition reaction.

[0114] In this embodiment, in the stock solution of the conductive film substrate, the dibasic acid anhydride is phthalic anhydride; the diamine package is propylene diamine; the conductive material is graphene and conductive carbon black; and the organic solvent is N,N-dimethylacetamide.

[0115] In this embodiment, in the stock solution of the conductive film substrate, the molar ratio of dibasic acid anhydride to diamine is 1:1; the mass percentage of the conductive substance in the dry film of the conductive film substrate is 35%; and the solid content of the stock solution of the conductive film substrate is 7%.

[0116] In this embodiment, the insulating film substrate is polyimide; the stock solution of the insulating film substrate includes the following components: dibasic acid anhydride, diamine and organic solvent; wherein the dibasic acid anhydride and the diamine are uniformly dispersed in the organic solvent to form the stock solution of the insulating film substrate, and when the stock solution of the insulating film substrate is coated and then heated, the dibasic acid anhydride and the diamine form a polyimide insulating film substrate with a cross-linked network structure through a nucleophilic addition reaction.

[0117] In this embodiment, in the stock solution of the insulating film substrate, the molar ratio of the dibasic acid anhydride to the diamine is 1:1; the dibasic acid anhydride is phthalic anhydride; the diamine package is propylenediamine; the organic solvent is N,N-dimethylacetamide; and the solid content of the stock solution of the insulating film substrate is 6%.

[0118] The actual photo of the conductive film prepared in this embodiment is as follows: Fig.13 and Fig.14 As shown. Among them, Fig.13 What is shown is one side of the conductive film substrate, and it can be seen that the electrodes are buried in the conductive film substrate. Fig.14 What is shown is one side of the insulating film substrate, and it can be seen that the electrodes are buried in the insulating film substrate.

[0119] Example 7

[0120] A method for preparing a conductive film by embedding electrodes in this embodiment, please refer to Figure 7 , including the following steps:

[0121] S1. Placing electrodes before the original liquid of the conductive film substrate is completely cross-linked and cured: first, placing an insulating film on the steel strip, then spraying the original liquid of the conductive film substrate on the insulating film, and heating the original liquid of the conductive film substrate to 199° C. to form a partially cross-linked and cured state, then placing a gold electrode on the conductive film substrate in the partially cross-linked and cured state, and then spraying the original liquid of the insulating film substrate on the conductive film substrate with the gold electrode placed;

[0122] S2. Then, the mixture is heated to 399° C. so that the original solution of the insulating film substrate and the original solution of the conductive film substrate are completely cross-linked and cured to obtain a conductive film.

[0123] In this embodiment, the conductive film substrate is a polyimide dispersed with a conductive substance, wherein the stock solution of the conductive film substrate includes the following components: a dibasic acid anhydride, a diamine, a conductive substance and an organic solvent; wherein the dibasic acid anhydride, the diamine and the conductive substance are uniformly dispersed in an organic solvent to form a stock solution of the conductive film substrate, and when the stock solution of the conductive film substrate is heated after spraying, the dibasic acid anhydride and the diamine form a polyimide with a cross-linked network structure through a nucleophilic addition reaction.

[0124] In this embodiment, in the stock solution of the conductive film substrate, the dibasic acid anhydride is an aromatic dibasic acid anhydride; the diamine is an aliphatic diamine; the conductive material is a carbon nanotube; and the organic solvent is N-methylpyrrolidone.

[0125] In this embodiment, in the stock solution of the conductive film substrate, the molar ratio of dibasic acid anhydride to diamine is 1:1; the mass percentage of the conductive substance in the dry film of the conductive film substrate is 15%; and the solid content of the stock solution of the conductive film substrate is 4.5%.

[0126] In this embodiment, the insulating film substrate is polyimide; the stock solution of the insulating film substrate includes the following components: dibasic acid anhydride, diamine and organic solvent; wherein the dibasic acid anhydride and the diamine are uniformly dispersed in the organic solvent to form the stock solution of the insulating film substrate, and when the stock solution of the insulating film substrate is coated and then heated, the dibasic acid anhydride and the diamine form a polyimide insulating film substrate with a cross-linked network structure through a nucleophilic addition reaction.

[0127] In this embodiment, in the stock solution of the insulating film substrate, the molar ratio of the dibasic acid anhydride to the diamine is 1:1; the dibasic acid anhydride is an aromatic dibasic acid anhydride; the diamine is an aliphatic diamine; the organic solvent is N-methylpyrrolidone; and the solid content of the stock solution of the insulating film substrate is 3%.

[0128] In this embodiment, the insulating film is a polyimide insulating film, which has the characteristic of high temperature resistance and can not be damaged during the subsequent heating and curing to form the conductive film substrate.

[0129] Example 8

[0130] A method for preparing a conductive film by embedding electrodes in this embodiment, please refer to Figure 8 , including the following steps:

[0131] S1. Placing electrodes before the original liquid of the conductive film substrate is completely cross-linked and cured: first spray the original liquid of the insulating film substrate on the steel strip, then heat the original liquid of the insulating film substrate to 201°C to form a partially cross-linked and cured state, then spray the original liquid of the conductive film substrate on the partially cross-linked and cured insulating film substrate, and heat the original liquid of the conductive film substrate to 201°C to form a partially cross-linked and cured state, then place a palladium electrode on the conductive film substrate in the partially cross-linked and cured state, and then spray the original liquid of the insulating film substrate on the conductive film substrate with the palladium electrode placed;

[0132] S2. Then, the mixture is heated to 401° C. to completely cross-link and solidify the original solution of the insulating film substrate and the original solution of the conductive film substrate, thereby obtaining a conductive film.

[0133] In this embodiment, the conductive film substrate is a polyimide dispersed with a conductive substance, wherein the stock solution of the conductive film substrate includes the following components: a dibasic acid anhydride, a diamine, a conductive substance and an organic solvent; wherein the dibasic acid anhydride, the diamine and the conductive substance are uniformly dispersed in an organic solvent to form a stock solution of the conductive film substrate, and when the stock solution of the conductive film substrate is heated after spraying, the dibasic acid anhydride and the diamine form a polyimide with a cross-linked network structure through a nucleophilic addition reaction.

[0134] In this embodiment, in the stock solution of the conductive film substrate, the dibasic acid anhydride is a semi-aromatic dibasic acid anhydride; the diamine is a semi-aromatic diamine; the conductive substance is conductive carbon black; and the organic solvent is N,N-dimethylformamide.

[0135] In this embodiment, in the stock solution of the conductive film substrate, the molar ratio of dibasic acid anhydride to diamine is 1:1; the mass percentage of the conductive substance in the dry film of the conductive film substrate is 8%; and the solid content of the stock solution of the conductive film substrate is 6.5%.

[0136] In this embodiment, the insulating film substrate is polyimide; the stock solution of the insulating film substrate includes the following components: dibasic acid anhydride, diamine and organic solvent; wherein the dibasic acid anhydride and the diamine are uniformly dispersed in the organic solvent to form the stock solution of the insulating film substrate, and when the stock solution of the insulating film substrate is coated and then heated, the dibasic acid anhydride and the diamine form a polyimide insulating film substrate with a cross-linked network structure through a nucleophilic addition reaction.

[0137] In this embodiment, in the original solution of the insulating film substrate, the molar ratio of the dibasic acid anhydride to the diamine is 1:1; the dibasic acid anhydride is a semi-aromatic dibasic acid anhydride; the diamine is a semi-aromatic diamine; the organic solvent is N,N-dimethylformamide, and the solid content of the original solution of the insulating film substrate is 10%.

[0138] Example 9

[0139] A method for preparing a conductive film by embedding electrodes in this embodiment, please refer to Fig. 9 , including the following steps:

[0140] S1. The electrode is placed before the original liquid of the conductive film substrate is completely cross-linked and cured: first, an insulating film is placed on the steel strip, and then a copper electrode is placed on the insulating film. Then, the original liquid of the conductive film substrate is sprayed on the insulating film with the copper electrode, and the original liquid of the conductive film substrate is heated to 197° C. to form a partially cross-linked and cured state, and then the original liquid of the insulating film substrate is sprayed on the conductive film substrate in the partially cross-linked and cured state;

[0141] S2. Then, the mixture is heated to 403° C. to completely cross-link and solidify the original solution of the insulating film substrate and the original solution of the conductive film substrate, thereby obtaining a conductive film.

[0142] In this embodiment, the conductive film substrate is a polyimide dispersed with a conductive substance, wherein the stock solution of the conductive film substrate includes the following components: a dibasic acid anhydride, a diamine, a conductive substance and an organic solvent; wherein the dibasic acid anhydride, the diamine and the conductive substance are uniformly dispersed in an organic solvent to form a stock solution of the conductive film substrate, and when the stock solution of the conductive film substrate is heated after spraying, the dibasic acid anhydride and the diamine form a polyimide with a cross-linked network structure through a nucleophilic addition reaction.

[0143] In this embodiment, in the stock solution of the conductive film substrate, the dibasic acid anhydride is a combination of maleic anhydride and phthalic anhydride; the diamine is a combination of ethylenediamine and hexamethylenediamine; the conductive material is carbon nanotubes; and the organic solvent is N,N-dimethylformamide.

[0144] In this embodiment, in the stock solution of the conductive film substrate, the molar ratio of dibasic acid anhydride to diamine is 1:1; the mass percentage of the conductive substance in the dry film of the conductive film substrate is 26%; and the solid content of the stock solution of the conductive film substrate is 5%.

[0145] In this embodiment, the insulating film substrate is polyimide; the stock solution of the insulating film substrate includes the following components: dibasic acid anhydride, diamine and organic solvent; wherein the dibasic acid anhydride and the diamine are uniformly dispersed in the organic solvent to form the stock solution of the insulating film substrate, and when the stock solution of the insulating film substrate is coated and then heated, the dibasic acid anhydride and the diamine form a polyimide insulating film substrate with a cross-linked network structure through a nucleophilic addition reaction.

[0146] In this embodiment, in the stock solution of the insulating film substrate, the molar ratio of dibasic acid anhydride to diamine is 1:1; maleic anhydride and phthalic anhydride are a combination; the diamine is a combination of ethylenediamine and hexamethylenediamine; the organic solvent is N,N-dimethylformamide. The solid content of the stock solution of the insulating film substrate is 7%.

[0147] In this embodiment, the insulating film is a polyimide insulating film, which has the characteristic of high temperature resistance and can not be damaged during the subsequent heating and curing to form the conductive film substrate.

[0148] Example 10

[0149] A method for preparing a conductive film by embedding electrodes in this embodiment, please refer to Fig.10 , including the following steps:

[0150] S1. Placing electrodes before the original liquid of the conductive film substrate is completely cross-linked and cured: first spray the original liquid of the insulating film substrate on the glass plate, heat the original liquid of the insulating film substrate to 200° C. to form a partially cross-linked and cured state, then place a silver electrode on the insulating film substrate in the partially cross-linked and cured state, then spray the original liquid of the conductive film substrate on the insulating film substrate with the silver electrode placed, heat the original liquid of the conductive film substrate to 200° C. to form a partially cross-linked and cured state, and then spray the original liquid of the insulating film substrate on the conductive film substrate in the partially cross-linked and cured state;

[0151] S2. Then, the mixture is heated to 401° C. to completely cross-link and solidify the original solution of the insulating film substrate and the original solution of the conductive film substrate, thereby obtaining a conductive film.

[0152] In this embodiment, the conductive film substrate is a polyimide dispersed with a conductive substance, wherein the stock solution of the conductive film substrate includes the following components: a dibasic acid anhydride, a diamine, a conductive substance and an organic solvent; wherein the dibasic acid anhydride, the diamine and the conductive substance are uniformly dispersed in an organic solvent to form a stock solution of the conductive film substrate, and when the stock solution of the conductive film substrate is heated after spraying, the dibasic acid anhydride and the diamine form a polyimide with a cross-linked network structure through a nucleophilic addition reaction.

[0153] In this embodiment, in the stock solution of the conductive film substrate, the dibasic acid anhydride is an aliphatic dibasic acid anhydride; the diamine is an aromatic diamine; the conductive substance is conductive carbon black; and the organic solvent is N,N-dimethylacetamide.

[0154] In this embodiment, in the stock solution of the conductive film substrate, the molar ratio of dibasic acid anhydride to diamine is 1:1; the mass percentage of the conductive substance in the dry film of the conductive film substrate is 18%; and the solid content of the stock solution of the conductive film substrate is 6%.

[0155] In this embodiment, the insulating film substrate is polyimide; the stock solution of the insulating film substrate includes the following components: dibasic acid anhydride, diamine and organic solvent; wherein the dibasic acid anhydride and the diamine are uniformly dispersed in the organic solvent to form the stock solution of the insulating film substrate, and when the stock solution of the insulating film substrate is coated and then heated, the dibasic acid anhydride and the diamine form a polyimide insulating film substrate with a cross-linked network structure through a nucleophilic addition reaction.

[0156] In this embodiment, in the stock solution of the insulating film substrate, the molar ratio of the dibasic acid anhydride to the diamine is 1:1; the dibasic acid anhydride is an aliphatic dibasic acid anhydride; the diamine is an aromatic diamine; the organic solvent is N,N-dimethylacetamide; and the solid content of the stock solution of the insulating film substrate is 5%.

[0157] Embodiment 11

[0158] A method for preparing a conductive film by embedding electrodes in this embodiment, please refer to Fig.11 , including the following steps:

[0159] S1. Placing electrodes before the original liquid of the conductive film substrate is completely cross-linked and cured: first spray the original liquid of the conductive film substrate on the polyimide film, and heat the original liquid of the conductive film substrate to 204°C to form a partially cross-linked and cured state, then place an aluminum electrode on the conductive film substrate in the partially cross-linked and cured state, and then spray the original liquid of the insulating film substrate on the conductive film substrate with the aluminum electrode placed;

[0160] S2. Then, the mixture is heated to 404° C. so that the original solution of the insulating film substrate and the original solution of the conductive film substrate are completely cross-linked and solidified to obtain a conductive film.

[0161] In this embodiment, the conductive film substrate is a polyimide dispersed with a conductive substance, wherein the stock solution of the conductive film substrate includes the following components: a dibasic acid anhydride, a diamine, a conductive substance and an organic solvent; wherein the dibasic acid anhydride, the diamine and the conductive substance are uniformly dispersed in an organic solvent to form a stock solution of the conductive film substrate, and when the stock solution of the conductive film substrate is heated after spraying, the dibasic acid anhydride and the diamine form a polyimide with a cross-linked network structure through a nucleophilic addition reaction.

[0162] In this embodiment, in the stock solution of the conductive film substrate, the dibasic acid anhydride is phthalic anhydride; the diamine is hexamethylenediamine; the conductive material is carbon nanotubes; and the organic solvent is N-methylpyrrolidone.

[0163] In this embodiment, in the stock solution of the conductive film substrate, the molar ratio of dibasic acid anhydride to diamine is 1:1; the mass percentage of the conductive substance in the dry film of the conductive film substrate is 12%; and the solid content of the stock solution of the conductive film substrate is 4%.

[0164] In this embodiment, the insulating film substrate is polyimide; the stock solution of the insulating film substrate includes the following components: dibasic acid anhydride, diamine and organic solvent; wherein the dibasic acid anhydride and the diamine are uniformly dispersed in the organic solvent to form the stock solution of the insulating film substrate, and when the stock solution of the insulating film substrate is coated and then heated, the dibasic acid anhydride and the diamine form a polyimide insulating film substrate with a cross-linked network structure through a nucleophilic addition reaction.

[0165] In this embodiment, in the stock solution of the insulating film substrate, the molar ratio of the dibasic acid anhydride to the diamine is 1:1; the dibasic acid anhydride is phthalic anhydride; the diamine is hexamethylenediamine; the organic solvent is N-methylpyrrolidone; and the solid content of the stock solution of the insulating film substrate is 9%.

[0166] Example 12

[0167] A method for preparing a conductive film by embedding electrodes in this embodiment, please refer to Fig.12 , including the following steps:

[0168] S1. Placing electrodes before the original liquid of the conductive film substrate is completely cross-linked and cured: firstly, a platinum electrode is placed on the polyimide film, and then the original liquid of the conductive film substrate is sprayed on the polyimide support base on which the platinum electrode is placed, and the original liquid of the conductive film substrate is heated to 199° C. to form a partially cross-linked and cured state, and then the original liquid of the insulating film substrate is sprayed on the conductive film substrate in the partially cross-linked and cured state;

[0169] S2. Then, the mixture is heated to 400° C. so that the original solution of the insulating film substrate and the original solution of the conductive film substrate are completely cross-linked and cured to obtain a conductive film.

[0170] In this embodiment, the conductive film substrate is a polyimide dispersed with a conductive substance, wherein the stock solution of the conductive film substrate includes the following components: a dibasic acid anhydride, a diamine, a conductive substance and an organic solvent; wherein the dibasic acid anhydride, the diamine and the conductive substance are uniformly dispersed in an organic solvent to form a stock solution of the conductive film substrate, and when the stock solution of the conductive film substrate is heated after spraying, the dibasic acid anhydride and the diamine form a polyimide with a cross-linked network structure through a nucleophilic addition reaction.

[0171] In this embodiment, in the stock solution of the conductive film substrate, the dibasic acid anhydride is a combination of succinic anhydride and maleic anhydride; the diamine is a combination of ethylenediamine and propylenediamine; the conductive material is graphene; and the organic solvent is N,N-dimethylformamide.

[0172] In this embodiment, in the stock solution of the conductive film substrate, the molar ratio of dibasic acid anhydride to diamine is 1:1; the mass percentage of the conductive substance in the dry film of the conductive film substrate is 32%; and the solid content of the stock solution of the conductive film substrate is 6%.

[0173] In this embodiment, the insulating film substrate is polyimide; the stock solution of the insulating film substrate includes the following components: dibasic acid anhydride, diamine and organic solvent; wherein the dibasic acid anhydride and the diamine are uniformly dispersed in the organic solvent to form the stock solution of the insulating film substrate, and when the stock solution of the insulating film substrate is coated and then heated, the dibasic acid anhydride and the diamine form a polyimide insulating film substrate with a cross-linked network structure through a nucleophilic addition reaction.

[0174] In this embodiment, in the original solution of the insulating film substrate, the molar ratio of the dibasic acid anhydride to the diamine is 1:1; the dibasic acid anhydride is a combination of succinic anhydride and maleic anhydride; the diamine is a combination of ethylenediamine and propylenediamine; the organic solvent is N,N-dimethylformamide; and the solid content of the original solution of the insulating film substrate is 4%.

[0175] Example 13

[0176] An application of a conductive film, wherein the conductive film prepared in the above embodiment is used to prepare a heating film, a thin film sensor, a thin film functional switch, a touch screen, a display or a battery.

[0177] Experimental test:

[0178] (I) Test of the bonding between electrode and conductive film substrate at high temperature

[0179] The conductive film prepared by the method for preparing a conductive film with a pre-embedded electrode in Example 1 was heated at 300° C. for 30 h, and after cooling, the cross section containing the electrode was cut to obtain a conductive film sample, and then the cross section of the conductive film sample was characterized by scanning electron microscopy (SEM), as shown in FIG. Fig.15 shown.

[0180] Depend on Fig.15 It can be seen that after the conductive film prepared by the present invention is heated at 300°C for 30 hours, the bonding between the electrode and the conductive film substrate is still very good, indicating that the method of preparing a conductive film by pre-embedded electrodes of the present invention can make the electrode and the conductive film substrate firmly bonded, and even after long-term treatment at high temperature, the electrode will not separate, and there is no phase separation at all. Therefore, the conductive film prepared by the method of preparing a conductive film by pre-embedded electrodes of the present invention can improve the electrical and thermal conductivity and has a high application prospect.

[0181] The conductive film prepared by the method for preparing a conductive film with a pre-embedded electrode in Example 5 was heated at 300° C. for 30 h, and after cooling, the cross section containing the electrode was cut to obtain a conductive film sample, and then the cross section of the conductive film sample was characterized by scanning electron microscopy (SEM), as shown in FIG. Fig.16 shown. Fig.16 In the figure, the "ordinary polyimide layer" is the insulating film, the "graphene layer" is the graphene film electrode, the "conductive polyimide layer" is the conductive film substrate, and the "conductive adhesive layer for electron microscopy" is convenient for fixing the conductive film sample during scanning electron microscopy observation.

[0182] Depend on Fig.16 It can be seen that after the conductive film prepared in Example 5 was heated at 300°C for 30 hours, the bonding between the electrode and the conductive film substrate was still very good, indicating that the method for preparing a conductive film by pre-embedded electrodes of the present invention can make the electrode and the conductive film substrate firmly bonded, and even after long-term treatment at high temperature, the electrode will not separate, and there is no phase separation at all. Therefore, the conductive film prepared by the method for preparing a conductive film by pre-embedded electrodes of the present invention can improve the electrical and thermal conductivity and has a high application prospect.

[0183] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. A method for preparing a conductive film by pre-embedded electrodes, characterized in that: The following steps are involved: S1. Placing electrodes before the original liquid of the conductive film substrate is completely cross-linked and cured: first, apply the original liquid of the conductive film substrate on the support base, heat it to a partially cross-linked and cured state, and then place the electrodes; or, first place the electrodes on the support base, and then spray the original liquid of the conductive film substrate; S2, heating until the substrate is completely cross-linked and cured to obtain the conductive film.

2. A method for preparing a conductive film by embedding an electrode as claimed in claim 1, characterized in that: In the step S1, an insulating film or a raw liquid coating the insulating film substrate is first placed on the supporting base and heated to a partially cross-linked and solidified state, and then a raw liquid of a conductive film substrate is coated on the insulating film and heated to a partially cross-linked and solidified state, and then an electrode is placed; or, an insulating film or a raw liquid coating the insulating film substrate is first placed on the supporting base and heated to a partially cross-linked and solidified state, and then an electrode is placed on the insulating film, and then the raw liquid of the conductive film substrate is sprayed.

3. A method for preparing a conductive film by embedding an electrode as claimed in claim 2, characterized in that: In the step S1, an insulating film or a coating of an insulating film substrate with a raw liquid is first placed on the supporting base and heated to a partially cross-linked and cured state, and then a raw liquid of a conductive film substrate is coated on the insulating film and heated to a partially cross-linked and cured state, and then an electrode is placed, and then the raw liquid of the insulating film substrate is sprayed; or, an insulating film or a coating of an insulating film substrate with a raw liquid is first placed on the supporting base and heated to a partially cross-linked and cured state, and then an electrode is placed on the insulating film, and then the raw liquid of the conductive film substrate is sprayed, and heated to a partially cross-linked and cured state, and then the raw liquid of the insulating film substrate is sprayed.

4. A method for preparing a conductive film by embedding an electrode as claimed in claim 1, characterized in that: In the step S1, the original solution of the conductive film substrate is first coated on the support base, and heated to a partially cross-linked and cured state, then the electrode is placed, and then the original solution of the insulating film substrate is sprayed; or, the electrode is first placed on the support base, and then the original solution of the conductive film substrate is sprayed, and heated to a partially cross-linked and cured state, and then the original solution of the insulating film substrate is sprayed.

5. The method for preparing a conductive film by embedding an electrode according to claim 1, characterized in that: In the step S1, the coating is performed by brushing or spraying; and / or During the process of placing the electrode, the electrode is placed into the partially cross-linked and cured conductive film substrate by applying pressure; and / or The electrode is one or both of a non-metallic high-conductivity electrode and a metal electrode; and / or The non-metallic high-conductivity electrode is one or more of a carbon fiber film, a carbon nanotube film, a graphene film or a carbon film; and / or The metal electrode is one or more of a copper electrode, a silver electrode, an aluminum electrode, a platinum electrode, a gold electrode or a palladium electrode.

6. The method for preparing a conductive film by embedding an electrode according to claim 1, characterized in that: The conductive film substrate is a polyimide film having conductive properties; and / or The stock solution of the conductive film substrate comprises the following components: dibasic acid anhydride, diamine, conductive material and organic solvent; and / or The dibasic acid anhydride is at least one of an aromatic dibasic acid anhydride, a semi-aromatic dibasic acid anhydride or an aliphatic dibasic acid anhydride; and / or the dibasic acid anhydride is at least one of succinic anhydride, maleic anhydride, phthalic anhydride or glutaric anhydride; and / or The diamine includes at least one of aromatic diamine, semi-aromatic diamine or aliphatic diamine, and / or includes at least one of ethylenediamine, propylenediamine, hexamethylenediamine or p-phenylenediamine; and / or The conductive material is at least one of carbon nanotubes, graphene, and conductive carbon black; and / or The organic solvent is at least one of N,N-dimethylformamide, N,N-dimethylacetamide or N-methylpyrrolidone; and / or The molar ratio of the dibasic acid anhydride to the diamine is 1:1; and / or the mass percentage of the conductive substance in the dry film of the conductive film substrate is 1% to 40%; and / or the solid content of the original solution of the conductive film substrate is 4% to 8%.

7. A method for preparing a conductive film by embedding electrodes as claimed in claim 2, 3 or 4, characterized in that: The insulating film substrate is polyimide; and / or The stock solution of the insulating film substrate comprises the following components: a dibasic acid anhydride, a diamine and an organic solvent; and / or The molar ratio of the dibasic acid anhydride to the diamine is 1:1; and / or the solid content of the stock solution of the insulating film substrate is 3% to 10%.

8. The method for preparing a conductive film by embedding an electrode according to claim 1, characterized in that: In the step S1, the temperature of heating to a partially cross-linked and cured state is 195° C. to 205° C.; and / or The supporting base is a polyimide film, a steel belt or a glass plate; and / or, the supporting base is placed on a transmission device and driven for transmission; and / or In the step S2, the temperature at which the substrate is heated to be completely cross-linked and cured is 350°C to 405°C.

9. A conductive film, characterized in that: The conductive film is prepared by the method for preparing a conductive film with a pre-buried electrode as described in any one of claims 1 to 8.

10. Use of a conductive film as claimed in claim 9, characterized in that: The conductive film is used for preparing a heating film, a thin film sensor, a thin film functional switch, a touch screen, a display or a battery.

Images