Self-powered photoelectric detector based on Cs2CuBiI6 film and preparation method thereof
By using Cs2CuBiI6 film material and specific preparation methods, the instability and lead toxicity of existing perovskite-based photodetector materials are solved, and the high efficiency, environmental protection and low-cost characteristics of self-powered photodetectors are achieved.
CN119677286AActive Publication Date: 2025-03-21CHONGQING UNIV OF POSTS & TELECOMM
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Patent Information
- Application Number
- CN202411671510.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-21
- Publication Date
- 2025-03-21
- Estimated Expiration
- 2044-11-21
AI Technical Summary
Technical Problem
The existing perovskite-based photodetectors have limited their application due to material instability and lead toxicity, and have complex processes, high costs and high energy consumption.
Method used
A self-powered photodetector is formed by a specific preparation method using a Cs2CuBiI6 film as the material of the photodetector, including a substrate, a PEDOT:PSS conductive polymer layer, a Cs2CuBiI6 film layer, a PC61BM film layer, a BCP layer and a silver electrode.
Benefits of technology
The environmental friendliness and stability of the material is achieved, the toxicity of the device is reduced, the photoelectric detection performance is improved, the switching ratio and responsiveness is increased, the process is simplified, and the cost is reduced.
✦ Generated by Eureka AI based on patent content.
Abstract
The invention belongs to the technical field of semiconductor photoelectric detection, and particularly relates to a self-powered photoelectric detector based on a Cs2CuBiI6 film and a preparation method of the self-powered photoelectric detector. The structure is composed of a glass substrate, a PEDOT: PSS conductive polymer layer, a Cs2CuBiI6 thin film layer, a PC61BM thin film layer, a BCP layer and a silver electrode. According to the technical scheme, the preparation of the lead-free Cs2CuBiI6 thin film is realized by adopting a simple preparation method, the defects of instability and lead toxicity of a traditional perovskite structure are overcome, and the prepared photoelectric detector has excellent photoelectric detection performance such as high response speed. And the method has very important significance in simplifying the perovskite light detector, simplifying the process, being environment-friendly and further enabling the perovskite light detector to be practical.
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