Preparation method of manganese-doped CsPbBr3 single crystal
By adding a specific solvent to the solvent and using inverse temperature crystallization method, the problem of crystal cracking and uneven distribution of Mn elements during high-temperature growth of manganese-doped CsPbBr3 single crystal is solved, and a high-quality and high-stability single crystal preparation is achieved, which is suitable for low-temperature semiconductor radiation detection devices.
Patent Information
- Application Number
- CN202510176035.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-18
- Publication Date
- 2025-05-06
AI Technical Summary
The existing manganese-doped CsPbBr3 inorganic perovskite single crystals are prone to crystal cracking and uneven distribution of Mn elements during high-temperature growth, resulting in degradation of crystal quality and unstable performance.
By adding methanol, cyclohexanol and bromohexanoic acid to the solvent, the growth temperature of the crystal is reduced, and the Mn-doped CsPbBr3 single crystal is synthesized by inverse temperature crystallization to ensure the uniform distribution of Mn elements.
The uniform distribution of Mn elements is achieved, the crystal growth temperature is reduced, the photoelectric performance and stability of manganese-doped CsPbBr3 single crystal is improved, and it is suitable for low-temperature semiconductor radiation detection devices.
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Figure CN119932691A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to a method for preparing a manganese-doped CsPbBr3 single crystal, and belongs to the field of inorganic perovskite preparation. Background Art
[0002] In recent years, metal halide perovskite materials have important application prospects in various fields such as medical diagnosis, clinical treatment, environmental monitoring, and aerospace. Currently used room temperature radiation detection materials include CZT, TlBr and HgI2, but these materials either have stability problems or cost problems, and therefore cannot be mass-produced and applied.
[0003] However, metal halide perovskite single crystals have adjustable band gaps, extremely low trap density, long diffusion length, high carrier mobility and long lifetime, which makes the radiation detectors made of single crystals have good energy resolution, high stability and sensitivity. Among them, CsPbBr3 perovskite has good performance and has attracted attention. However, the current CsPbBr3 single crystal has high growth temperature, which will cause stress and strain inside the crystal, causing the crystal to crack and reduce the quality of the crystal. At the same time, the high growth temperature increases the growth cost of the single crystal. However, when doped with Mn, due to the uneven distribution of Mn elements, there are many defects inside the crystal. Here, this paper synthesizes Mn-doped CsPbBr3 single crystals by reducing the crystal growth temperature. After SEM characterization, the internal elements are evenly distributed, and the Mn-doped single crystals show better photoelectric properties and stability. Summary of the invention
[0004] In order to solve the problems existing in the existing manganese-doped CsPbBr3 inorganic perovskite, the present invention provides a method for preparing a Mn-doped CsPbBr3 perovskite single crystal, the preparation method comprising the following steps:
[0005] (1) Cesium bromide, lead bromide and manganese bromide are dissolved in DMSO (dimethyl sulfoxide) solvent, bromohexanoic acid is added, and the mixture is thoroughly mixed in a water bath to obtain a mixed solution I.
[0006] (2) Methanol, cyclohexanol and DMF (N,N-dimethylformamide) are fully mixed to obtain a mixed solution II.
[0007] (3) Mixing the mixed solution I and the mixed solution II, stirring them fully in a water bath, and filtering them with a filter to obtain a precursor solution.
[0008] (4) A seed crystal is placed in the precursor solution, and the precursor and the container are placed in silicone oil, and a manganese-doped CsPbBr3 single crystal is obtained by a temperature inversion crystallization method.
[0009] Preferably, the total amount of cesium bromide, lead bromide, manganese bromide and bromocaproic acid added to dimethyl sulfoxide in step (1) is 1.43-1.45 mmol / mL; wherein the molar ratio of cesium bromide, lead bromide, manganese bromide and bromocaproic acid is (50:99.6:1:6.5)-(16.6:32.3:1:2).
[0010] Preferably, the temperature of the water bath in step (1) is 60°C.
[0011] Preferably, in step (2), the volume ratio of methanol, cyclohexanol and N,N-dimethylformamide is 0.3:0.7:1.1.
[0012] Preferably, in step (3), the volume ratio of mixed solution I to mixed solution II is (1-1.2):0.7.
[0013] Preferably, the temperature of the water bath in step (3) is 50°C.
[0014] Preferably, the filter in step (3) is polytetrafluoroethylene with a pore size of 0.22 mm.
[0015] Preferably, the size of the seed crystal in step (4) is 0.5×0.5×0.3 cm 3 .
[0016] Preferably, the conditions of the inversion crystallization method in step (4) are: starting from 60°C, the temperature is increased at a rate of 1°C / h. When the seed crystal placed in does not dissolve, the temperature is increased at a rate of 2°C / day. When the seed crystal placed in grows to the centimeter level, the crystal is taken out.
[0017] Technical effects of the present invention:
[0018] The present invention can not only reduce the growth temperature of the crystal by adding methanol, cyclohexanol and bromohexanoic acid to the solvent, but also make the Mn element evenly distributed through the method of the present invention, so as to prepare CsPbBr3 single crystals doped with manganese with excellent and stable photoelectric properties. Therefore, the single crystals prepared by the present invention can be applied to the field of new material device manufacturing process technology for low-temperature semiconductor radiation detection devices. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] Figure 1 This is a physical picture of the single crystal prepared in Examples 1 to 3 and Comparative Example 3.
[0020] Figure 2 The X-ray diffraction (XRD) patterns of the single crystals prepared in Examples 1 to 3 and Comparative Example 3 are shown.
[0021] Figure 3 This is the SEM image of the single crystal prepared in Example 2.
[0022] Figure 4 The ultraviolet absorption graphs of the single crystals prepared in Examples 1 to 3 and Comparative Example 3 are shown.
[0023] Figure 5 1 is the band gap diagram of the single crystal prepared in Examples 1 to 3 and Comparative Example 3.
[0024] Figure 6 The dark current curves of the single crystals prepared in Example 1 and Comparative Example 3 are shown.
[0025] Figure 7 The hole mobility of the single crystals prepared in Example 1 and Comparative Example 3. DETAILED DESCRIPTION
[0026] The present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments, but the protection scope of the present invention is not limited to the described contents.
[0027] Example 1
[0028] A method for preparing a manganese-doped CsPbBr3 single crystal comprises the following steps:
[0029] (1) Preparation: First, treat the growth bottle. Wash the growth bottle with deionized water, then use an ultrasonic device to ultrasonicate the growth bottle for 25 minutes, then wash it with anhydrous ethanol, and then put it in an oven to dry for use; then pre-treat the crystal growth equipment, take two large beakers, put silicone oil in them, put them in a temperature-controlled constant temperature drying oven, and then start the temperature control program, raise the temperature to 50°C, so that the silicone oil in the beaker is heated to 50°C.
[0030] (2) 3.07 mmol of cesium bromide, 6.087 mmol of lead bromide and 0.061 mmol of manganese bromide were dissolved in 6.7 mL of DMSO solvent, and 0.4 mmol of bromohexanoic acid was added. The mixture was heated and stirred in a water bath at 60° C. for 5 h to obtain a mixed solution I.
[0031] (3) 0.6 ml of methanol, 1.4 ml of cyclohexanol, and 2.2 ml of DMF were added to a sample bottle and stirred at room temperature for 2 h to mix them thoroughly to obtain a mixed solution II.
[0032] (4) Mix the mixed solution I obtained in step (2) and the mixed solution II obtained in step (3), continue stirring in a 50° C. water bath for 2 h, and filter the solution with a polytetrafluoroethylene filter with a pore size of 0.22 mm to obtain the desired precursor solution.
[0033] (5) Transfer the precursor solution obtained in step (4) to a pre-dried growth bottle, and place a seed crystal in the center of the bottom of the growth bottle. Place the growth bottle containing the precursor solution in the silicone oil of a temperature-controllable constant temperature drying oven, allowing the silicone oil in the beaker to completely immerse the precursor solution in the growth bottle.
[0034] (6) Using the inversion crystallization method, the temperature was raised from 60°C at a rate of 1°C / h. When the seed crystal did not dissolve, the temperature was raised at a rate of 2°C / day until the seed crystal grew to the centimeter level. The crystal was then taken out to obtain a 1% manganese-doped CsPbBr3 single crystal.
[0035] (7) The manganese-doped CsPbBr3 single crystal obtained in step (6) is cleaned with DMF solvent, and then the precursor solution remaining on the surface of the crystal is removed with a dust-free cloth to obtain high-quality CsPbBr3 crystals. Next, a sealing machine is used to vacuum-seal the sample bottle containing the CsPbBr3 single crystal and store it in a dry area.
[0036] Example 2
[0037] A method for preparing a manganese-doped CsPbBr3 single crystal comprises the following steps:
[0038] (1) Preparation: First, treat the growth bottle. Wash the growth bottle with deionized water, then use an ultrasonic device to ultrasonicate the growth bottle for 25 minutes, then wash it with anhydrous ethanol, and then put it in an oven to dry for use; then pre-treat the crystal growth equipment, take two large beakers, put silicone oil in them, put them in a temperature-controlled constant temperature drying oven, and then start the temperature control program, raise the temperature to 50°C, so that the silicone oil in the beaker is heated to 50°C.
[0039] (2) 3.07 mmol of cesium bromide, 6.017 mmol of lead bromide and 0.122 mmol of manganese bromide were dissolved in 6.7 mL of DMSO solvent, and 0.4 mmol of bromohexanoic acid was added. The mixture was heated and stirred in a water bath at 60° C. for 5 h to obtain a mixed solution I.
[0040] (3) 0.6 ml of methanol, 1.4 ml of cyclohexanol, and 2.2 ml of DMF were added to a sample bottle and stirred at room temperature for 2 h to mix them thoroughly to obtain a mixed solution II.
[0041] (4) Mix the mixed solution I obtained in step (2) and the mixed solution II obtained in step (3), continue stirring in a 50° C. water bath for 2 h, and filter the solution with a polytetrafluoroethylene filter with a pore size of 0.22 mm to obtain the desired precursor solution.
[0042] (5) Transfer the precursor solution obtained in step (4) to a pre-dried growth bottle, and place a seed crystal in the center of the bottom of the growth bottle. Place the growth bottle containing the precursor solution in the silicone oil of a temperature-controllable constant temperature drying oven, allowing the silicone oil in the beaker to completely immerse the precursor solution in the growth bottle.
[0043] (6) Using the inversion crystallization method, the temperature was raised from 60°C at a rate of 1°C / h. When the seed crystal did not dissolve, the temperature was raised at a rate of 2°C / day until the seed crystal grew to the centimeter level. The crystal was then taken out to obtain a 2% manganese-doped CsPbBr3 single crystal.
[0044] (7) The manganese-doped CsPbBr3 single crystal obtained in step (6) is cleaned with DMF solvent, and then the precursor solution remaining on the surface of the crystal is removed with a dust-free cloth to obtain high-quality CsPbBr3 crystals. Next, a sealing machine is used to vacuum-seal the sample bottle containing the CsPbBr3 single crystal and store it in a dry area.
[0045] Example 3
[0046] A method for preparing a manganese-doped CsPbBr3 single crystal comprises the following steps:
[0047] (1) Preparation: First, treat the growth bottle. Wash the growth bottle with deionized water, then use an ultrasonic device to ultrasonicate the growth bottle for 25 minutes, then wash it with anhydrous ethanol, and then put it in an oven to dry for use; then pre-treat the crystal growth equipment, take two large beakers, put silicone oil in them, put them in a temperature-controlled constant temperature drying oven, and then start the temperature control program, raise the temperature to 50°C, so that the silicone oil in the beaker is heated to 50°C.
[0048] (2) 3.07 mmol of cesium bromide, 5.956 mmol of lead bromide and 0.184 mmol of manganese bromide were dissolved in 6.7 mL of DMSO solvent, and 0.4 mmol of bromohexanoic acid was added. The mixture was heated and stirred in a water bath at 60° C. for 5 h to obtain a mixed solution I.
[0049] (3) 0.6 ml of methanol, 1.4 ml of cyclohexanol, and 2.2 ml of DMF were added to a sample bottle and stirred at room temperature for 2 h to mix them thoroughly to obtain a mixed solution II.
[0050] (4) Mix the mixed solution I obtained in step (2) and the mixed solution II obtained in step (3), continue stirring in a 50° C. water bath for 2 h, and filter the solution with a polytetrafluoroethylene filter with a pore size of 0.22 mm to obtain the desired precursor solution.
[0051] (5) Transfer the precursor solution obtained in step (4) to a pre-dried growth bottle, and place a seed crystal in the center of the bottom of the growth bottle. Place the growth bottle containing the precursor solution in the silicone oil of a temperature-controllable constant temperature drying oven, allowing the silicone oil in the beaker to completely immerse the precursor solution in the growth bottle.
[0052] (6) Using the inversion crystallization method, the temperature was raised from 60°C at a rate of 1°C / h. When the seed crystal did not dissolve, the temperature was raised at a rate of 2°C / day until the seed crystal grew to the centimeter level. The crystal was then taken out to obtain a 3% manganese-doped CsPbBr3 single crystal.
[0053] (7) The manganese-doped CsPbBr3 single crystal obtained in step (6) is cleaned with DMF solvent, and then the precursor solution remaining on the surface of the crystal is removed with a dust-free cloth to obtain high-quality CsPbBr3 crystals. Next, a sealing machine is used to vacuum-seal the sample bottle containing the CsPbBr3 single crystal and store it in a dry area.
[0054] Comparative Example 1
[0055] As a comparison, the difference between this comparative example and Example 1 is that bromohexanoic acid and methanol are not used, and the remaining steps and reagent dosages are the same as those in Example 1. The specific preparation steps are as follows:
[0056] (1) Preparation: First, treat the growth bottle. Wash the growth bottle with deionized water, then use an ultrasonic device to ultrasonicate the growth bottle for 25 minutes, then wash it with anhydrous ethanol, and then put it in an oven to dry for use; then pre-treat the crystal growth equipment, take two large beakers, put silicone oil in them, put them in a temperature-controlled constant temperature drying oven, and then start the temperature control program, raise the temperature to 50°C, so that the silicone oil in the beaker is heated to 50°C.
[0057] (2) 3.07 mmol of cesium bromide, 6.087 mmol of lead bromide and 0.061 mmol of manganese bromide were dissolved in 6.7 mL of DMSO solvent, and heated and stirred in a water bath at 60° C. for 5 h to obtain a mixed solution I.
[0058] (3) 1.4 ml of cyclohexanol and 2.2 ml of DMF were added to a sample bottle and stirred at room temperature for 2 h to mix them thoroughly to obtain a mixed solution II.
[0059] (4) Mix the mixed solution I obtained in step (2) and the mixed solution II obtained in step (3), continue stirring in a 50° C. water bath for 2 h, and filter the solution with a polytetrafluoroethylene filter with a pore size of 0.22 mm to obtain the desired precursor solution.
[0060] (5) Transfer the precursor solution obtained in step (4) to a pre-dried growth bottle, and place a seed crystal in the center of the bottom of the growth bottle. Place the growth bottle containing the precursor solution in the silicone oil of a temperature-controllable constant temperature drying oven, allowing the silicone oil in the beaker to completely immerse the precursor solution in the growth bottle.
[0061] (6) Using the inversion crystallization method, the temperature was raised from 90°C at a rate of 1°C / h. When the seed crystal did not dissolve, the temperature was raised at a rate of 2°C / day until the seed crystal grew to the centimeter level. The crystal was then taken out to obtain a manganese-doped CsPbBr3 single crystal.
[0062] (7) The manganese-doped CsPbBr3 single crystal obtained in step (6) is cleaned with DMF solvent, and then the precursor solution remaining on the surface of the crystal is removed with a dust-free cloth to obtain high-quality CsPbBr3 crystals. Next, a sealing machine is used to vacuum-seal the sample bottle containing the CsPbBr3 single crystal and store it in a dry area.
[0063] Comparative Example 2
[0064] As a comparison, the difference between this comparative example and Example 1 is that bromohexanoic acid is not used, and the remaining steps and reagent dosages are the same as those in Example 1. The specific preparation steps are as follows:
[0065] (1) Preparation: First, treat the growth bottle. Wash the growth bottle with deionized water, then use an ultrasonic device to ultrasonicate the growth bottle for 25 minutes, then wash it with anhydrous ethanol, and then put it in an oven to dry for use; then pre-treat the crystal growth equipment, take two large beakers, put silicone oil in them, put them in a temperature-controlled constant temperature drying oven, and then start the temperature control program, raise the temperature to 50°C, so that the silicone oil in the beaker is heated to 50°C.
[0066] (2) 3.07 mmol of cesium bromide, 6.087 mmol of lead bromide and 0.061 mmol of manganese bromide were dissolved in 6.7 mL of DMSO solvent, and heated and stirred in a water bath at 60° C. for 5 h to obtain a mixed solution I.
[0067] (3) 0.6 ml of methanol, 1.4 ml of cyclohexanol, and 2.2 ml of DMF were added to a sample bottle and stirred at room temperature for 2 h to mix them thoroughly to obtain a mixed solution II.
[0068] (4) Mix the mixed solution I obtained in step (2) and the mixed solution II obtained in step (3), continue stirring in a 50° C. water bath for 2 h, and filter the solution with a polytetrafluoroethylene filter with a pore size of 0.22 mm to obtain the desired precursor solution.
[0069] (5) Transfer the precursor solution obtained in step (4) to a pre-dried growth bottle, and place a seed crystal in the center of the bottom of the growth bottle. Place the growth bottle containing the precursor solution in the silicone oil of a temperature-controllable constant temperature drying oven, allowing the silicone oil in the beaker to completely immerse the precursor solution in the growth bottle.
[0070] (6) Using the inversion crystallization method, the temperature was raised from 60°C at a rate of 1°C / h. When the seed crystal did not dissolve, the temperature was raised at a rate of 2°C / day until the seed crystal grew to the centimeter level. The crystal was then taken out to obtain a manganese-doped CsPbBr3 single crystal.
[0071] (7) The manganese-doped CsPbBr3 single crystal obtained in step (6) is cleaned with DMF solvent, and then the precursor solution remaining on the surface of the crystal is removed with a dust-free cloth to obtain high-quality CsPbBr3 crystals. Next, a sealing machine is used to vacuum-seal the sample bottle containing the CsPbBr3 single crystal and store it in a dry area.
[0072] Because methanol and bromohexanoic acid were not used in Comparative Example 1, and bromohexanoic acid was not used in Comparative Example 2, the growth temperature of the crystal was relatively high, resulting in uneven distribution of the Mn element in the prepared crystal, so that the performance of the finally prepared crystal was not as good as that of Example 1.
[0073] Comparative Example 3
[0074] For comparison, the present invention is different from Example 1 in that manganese is not doped. The specific preparation method is as follows:
[0075] (1) Preparation: First, treat the growth bottle. Wash the growth bottle with deionized water, then use an ultrasonic device to ultrasonicate the growth bottle for 25 minutes, then wash it with anhydrous ethanol, and then put it in an oven to dry for use; then pre-treat the crystal growth equipment, take two large beakers, put silicone oil in them, put them in a temperature-controlled constant temperature drying oven, and then start the temperature control program, raise the temperature to 50°C, so that the silicone oil in the beaker is heated to 50°C.
[0076] (2) 3.07 mmol of cesium bromide and 6.14 mmol of lead bromide were dissolved in 6.7 mL of DMSO solvent, and 0.4 mmol of bromohexanoic acid was added. The mixture was heated and stirred in a water bath at 60° C. for 5 h to obtain a mixed solution I.
[0077] (3) 0.6 ml of methanol, 1.4 ml of cyclohexanol, and 2.2 ml of DMF were added to a sample bottle and stirred at room temperature for 2 h to mix them thoroughly to obtain a mixed solution II.
[0078] (4) Mix the mixed solution I obtained in step (2) and the mixed solution II obtained in step (3), continue stirring in a 50° C. water bath for 2 h, and filter the solution with a polytetrafluoroethylene filter with a pore size of 0.22 mm to obtain the desired precursor solution.
[0079] (5) Transfer the precursor solution obtained in step (4) to a pre-dried growth bottle, and place a seed crystal in the center of the bottom of the growth bottle. Place the growth bottle containing the precursor solution in the silicone oil of a temperature-controllable constant temperature drying oven, allowing the silicone oil in the beaker to completely immerse the precursor solution in the growth bottle.
[0080] (6) Using the inversion crystallization method, the temperature was raised at a rate of 1°C / h starting from 60°C. When the seed crystal did not dissolve, the temperature was raised at a rate of 2°C / day until the seed crystal grew to the centimeter level. The crystal was then taken out to obtain a manganese-doped CsPbBr3 single crystal.
[0081] (7) The manganese-doped CsPbBr3 single crystal obtained in step (6) is cleaned with DMF solvent, and then the precursor solution remaining on the surface of the crystal is removed with a dust-free cloth to obtain high-quality CsPbBr3 crystals. Next, a sealing machine is used to vacuum-seal the sample bottle containing the CsPbBr3 single crystal and store it in a dry area.
[0082] The actual pictures of the single crystals prepared in Examples 1 to 3 and Comparative Example 3 are as follows: Figure 1 As shown: It can be seen from the figure: as the Mn content increases, the color of the single crystal becomes lighter.
[0083] The X-ray diffraction (XRD) patterns of the single crystals prepared in Examples 1 to 3 and Comparative Example 3 are as follows: Figure 2 As shown, the SEM image of the single crystal prepared in Example 2 is as follows Figure 3 As shown, combined Figure 2 and Figure 3 It can be proved that Mn is indeed doped into the CsPbBr3 single crystal and is evenly distributed.
[0084] The ultraviolet absorption and band gap diagrams of the single crystals prepared in Examples 1 to 3 and Comparative Example 3 are shown in FIG. Figure 4 and Figure 5 As shown, with the increase of doping amount, the ultraviolet absorption peak begins to shift to the left, and its band gap also increases slightly.
[0085] The dark current of the single crystals prepared in Example 1 and Comparative Example 2 is as follows: Figure 6 As shown, from Figure 6 It can be seen that the single crystal obtained by Mn doping has a lower dark current.
[0086] The hole mobility of the single crystals prepared in Example 1 and Comparative Example 2 is as follows: Figure 7 As shown, from Figure 7 It can be seen that the single crystal obtained by Mn doping has a higher mobility.
Claims
1. A method for preparing a manganese-doped CsPbBr3 single crystal, characterized in that: The preparation method comprises the following steps: (1) dissolving cesium bromide, lead bromide and manganese bromide in a dimethyl sulfoxide solvent, adding bromocaproic acid, and mixing them thoroughly in a water bath to obtain a mixed solution I; (2) fully mixing methanol, cyclohexanol and N,N-dimethylformamide to obtain a mixed solution II; (3) mixing the mixed solution I and the mixed solution II, stirring them fully in a water bath, and filtering them with a filter to obtain a precursor solution; (4) A seed crystal is placed in the precursor solution, and the precursor and the container are placed in silicone oil, and a manganese-doped CsPbBr3 single crystal is obtained by a temperature inversion crystallization method.
2. The method for preparing the manganese-doped CsPbBr3 single crystal according to claim 1, characterized in that: The total amount of cesium bromide, lead bromide, manganese bromide and bromocaproic acid added in the dimethyl sulfoxide in step (1) is 1.43-1.45 mmol / mL, wherein the molar ratio of cesium bromide, lead bromide, manganese bromide and bromocaproic acid is (50:99.6:1:6.5)-(16.6:32.3:1:2).
3. The method for preparing the manganese-doped CsPbBr3 single crystal according to claim 1, characterized in that: The temperature of the water bath in step (1) is 60°C.
4. The method for preparing the manganese-doped CsPbBr3 single crystal according to claim 1, characterized in that: In step (2), the volume ratio of methanol, cyclohexanol and N,N-dimethylformamide is 0.3:0.7:1.
1.
5. The method for preparing the manganese-doped CsPbBr3 single crystal according to claim 1, characterized in that: In step (3), the volume ratio of mixed solution I to mixed solution II is (1-1.2):0.
7.
6. The method for preparing manganese-doped CsPbBr3 single crystal according to claim 1, characterized in that: The temperature of the water bath in step (3) is 50°C.
7. The method for preparing the manganese-doped CsPbBr3 single crystal according to claim 1, characterized in that: The filter in step (3) is polytetrafluoroethylene with a pore size of 0.22 mm.
8. The method for preparing the manganese-doped CsPbBr3 single crystal according to claim 1, characterized in that: The size of the seed crystal in step (4) is 0.5×0.5×0.3 cm 3 .
9. The method for preparing the manganese-doped CsPbBr3 single crystal according to claim 1, characterized in that: The conditions of the inversion crystallization method in step (4) are: starting from 60°C, the heating rate is 1°C / h. When the seed crystal does not dissolve, the temperature is increased at a rate of 2°C / day. When the seed crystal grows to the centimeter level, the crystal is taken out.