A method for manufacturing a tungsten via
By completing the tungsten film deposition and etching steps in one device, and utilizing a vacuum transfer channel and cooling device, the problems of low efficiency and numerous defects in tungsten through-hole manufacturing have been solved, achieving efficient tungsten etching and improved yield.
CN120015696BActive Publication Date: 2026-05-08SHANGHAI BANGXIN SEMI TECHNOLOGY CO LTD
1 Cites 0 Cited by
Patent Information
- Application Number
- CN202510196906.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-21
- Publication Date
- 2026-05-08
- Estimated Expiration
- 2045-02-21
AI Technical Summary
Technical Problem
Existing tungsten through-hole manufacturing methods are inefficient and prone to introducing defects, affecting chip yield.
Method used
The tungsten film deposition and etching steps are completed in one device. Using a vacuum transfer channel and a cooling device, the intermediate structure is transferred to the second chamber for etching within a predetermined cooling time through the vacuum transfer channel, reducing the number of vacuum breaks.
Benefits of technology
It improves tungsten etching efficiency, reduces the risk of defects, and increases chip yield.
✦ Generated by Eureka AI based on patent content.
Abstract
The application provides a tungsten via hole manufacturing method, which comprises the following steps: providing an equipment comprising a first cavity and a second cavity connected by a vacuum transmission channel, and a cooling device is arranged in the vacuum transmission channel; placing a substrate with a via hole on the surface into the first cavity; introducing a first gas into the first cavity to deposit a tungsten film layer, so as to obtain an intermediate structure comprising the substrate and the tungsten film layer, and the tungsten film layer covers the surface of the substrate and fills into the via hole; pumping the first cavity, the vacuum transmission channel and the second cavity to the same preset vacuum degree; transmitting the intermediate structure into the second cavity through the vacuum transmission channel; introducing a second gas into the second cavity to etch and remove the tungsten film layer outside the via hole, so as to form a tungsten via hole; breaking the vacuum and taking out the substrate with the tungsten via hole from the equipment. The tungsten via hole manufacturing method can effectively improve the etching efficiency of tungsten, reduce the risk of defects and improve the yield of chips.
Need to check novelty before this filing date? Find Prior Art