Perovskite thin film and preparation method and application thereof
The dense, high-crystalline large-grain lead bromide layer was prepared on the substrate surface by vapor deposition method, and perovskite film was prepared in reaction with organic salts, which solved the problems of poor film quality and low repeatability in the prior art, and achieved the preparation of perovskite films with good quality and uniformity, and improved the performance of optoelectronic devices.
Patent Information
- Application Number
- CN202510692207.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-05-27
- Publication Date
- 2025-08-26
AI Technical Summary
In the prior art, the preparation process of perovskite films has problems such as poor film quality, poor uniformity and low process repeatability. In particular, the solution spin coating method is difficult to accurately control, the anti-solvent volatilization process is prone to pinhole defects, and the fluctuations in ambient temperature and humidity are significant.
A dense, high crystalline lead bromide layer was prepared on the substrate surface by vapor deposition, and a perovskite film was prepared by reacting with organic salts to avoid anti-solvents and gas knife auxiliary devices, and simplifying the process flow.
The crystallinity and grain size of perovskite films are improved, the uniformity of the film and the repetition of the preparation are enhanced, and the performance of optoelectronic devices is improved.
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Figure CN120548089A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of perovskite optoelectronic technology, and in particular to a perovskite film and a preparation method and application thereof. Background Art
[0002] Perovskite materials, as a new generation of optoelectronic functional materials, have attracted much attention due to their excellent optoelectronic properties. This material has the optoelectronic advantages of high light absorption coefficient, long carrier diffusion length, precisely controllable band gap, excellent bipolar transmission characteristics and high defect tolerance, while also having the advantage of low-cost preparation. These characteristics make it show great application potential in optoelectronic devices such as solar cells, light-emitting diodes (LEDs), photodetectors, and lasers. As the core active layer of optoelectronic devices, the quality of perovskite films directly determines the performance of the devices. However, the current mainstream solution spin coating preparation process has significant technical bottlenecks: first, the anti-solvent or air knife assisted crystallization process is difficult to accurately control, resulting in poor film uniformity and process repeatability; second, pinhole defects are easily formed during solvent evaporation; and fluctuations in ambient temperature and humidity can significantly affect the film morphology, resulting in obvious batch differences.
[0003] In response to these problems, developing a high-quality and highly repeatable method for preparing perovskite films is an urgent issue to be solved by those skilled in the art. Summary of the Invention
[0004] In view of this, the present application provides a method for preparing a perovskite film to solve key problems existing in the prior art, such as poor film quality, poor uniformity, and low process repeatability.
[0005] The present application provides a method for preparing a perovskite thin film, comprising:
[0006] vapor-depositing lead bromide on the surface of the substrate to obtain a lead bromide layer;
[0007] The lead bromide layer is reacted with an organic salt to obtain a perovskite film.
[0008] The vapor deposition process can be used to prepare high-quality lead bromide precursor layers with high density, high crystallinity, high orientation and large grains, providing a good foundation for the two-step preparation of high-quality perovskite films.
[0009] The present application first vapor-deposit lead bromide on the surface of the substrate to obtain a lead bromide layer. In some specific implementations, the vapor-deposited lead bromide includes but is not limited to evaporation of lead bromide. The present application has no special requirements for the vapor deposition method. The particle size of the lead bromide is 20nm to 500nm. The lead bromide layer has the following characteristics: (1) Density: no holes, no cracks; (2) High crystallinity; (3) Orientation: lead bromide grains show vertical through-growth; (4) Large grains: lead bromide is granular with obvious grain boundaries, and the grain size increases with the increase of film thickness, 20nm to 500nm. In some specific implementations, the evaporation temperature is 100℃ to 1000℃; the evaporation pressure is 10 -6 Pa to 10 -5 Pa; the evaporation rate is to In some specific implementations, the thickness of the lead bromide layer is 1 nm to 10 6 In some specific implementations, the substrate includes but is not limited to self-assembled monolayers (SAMs), nickel oxide (NiO X ), poly(2,3-dihydrothieno-1,4-dioxin)-poly(styrene sulfonate) (PEDOT:PSS), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), tin oxide (SnO2), zinc oxide (ZnO), titanium oxide (TiO2), tin-doped indium oxide (ITO) or fluorine-doped tin oxide (FTO) One or more of the present application has no special requirements for the selection of the substrate, and the thickness of the substrate is 1nm to 1000nm, preferably 1nm-200nm.
[0010] The present application then reacts the lead bromide layer with an organic salt to obtain a perovskite film. In some specific implementations, the reaction temperature is 20°C to 400°C, and can be 20°C, 30°C, 40°C, 70°C, 100°C, 150°C, 200°C, 300°C, or 400°C. The reaction time is 1 min to 60 min, and can be 1 min, 2 min, 3 min, 4 min, 5 min, 8 min, 10 min, 15 min, 30 min, 40 min, 50 min, or 60 min. In some specific implementations, the lead bromide layer is mixed with the organic salt and then reacted. The mixing method includes but is not limited to any one of spin coating, vapor deposition, immersion, spraying, blade coating, printing, or thermal annealing assisted deposition. The present application has no special requirements for the method of depositing the organic salt. In some specific implementations, the organic salt includes but is not limited to one or more of formamidine ammonium halide, methylammonium halide, cesium halide, n-butylammonium halide, isobutylammonium halide, aminovaleric acid halide, 1-naphthylmethylammonium halide, phenethylammonium halide, n-butylammonium halide, benzylammonium halide, phenylpropylammonium halide, phenylbutylammonium halide, n-octylamine hydrohalide, ethylamine hydrohalide or guanidine hydrohalide, wherein the halogen is any one of chlorine, bromine or iodine.
[0011] This application utilizes vapor deposition to prepare a lead bromide layer, which serves as a precursor layer for the two-step preparation of high-quality perovskite thin films. The lead bromide layer exhibits high crystallinity, large grain size, and a highly oriented crystalline morphology, which provides an excellent foundation for the subsequent diffusion reaction of organic salts. The perovskite thin film prepared by this preparation method exhibits significant advantages, including high crystallinity, large grain size, and complete conversion. Perovskite solar cell devices prepared using this process exhibit excellent photovoltaic performance.
[0012] The present application also provides a perovskite film, which is prepared according to the above-mentioned preparation method.
[0013] In some specific implementations, the perovskite film includes but is not limited to the structural formula FAPbX3, MAPbX3, CsPbX3, (FAMACs)PbX3, (FACs)PbX3, (MACs)PbX3 or L2A n-1 D n X 3n+1 Compounds;
[0014] wherein X is one or more of Br, I or Cl, L is a large cation, and n is an integer from 1 to 10; the large cation includes but is not limited to any one or more of phenylethylammonium cation, isopropylammonium cation, thiopheneethylammonium cation, 5-aminovaleric acid ammonium cation, 1,4-butyldiammonium cation, 1,3-propylenediammonium cation, n-butylammonium cation, isobutylammonium cation, aminovaleric acid cation, 1-naphthylmethylammonium cation, phenylethylammonium cation, n-butylammonium cation, benzylammonium cation, phenylpropylammonium cation, phenylbutylammonium cation, n-octylammonium cation, ethylammonium cation or guanidinium cation; A includes but is not limited to one or more of formamidinium ion (FA), methylammonium ion (MA) or cesium ion (Cs); and D includes but is not limited to one or more of lead ion, tin ion, germanium ion, bismuth ion, antimony ion, indium ion, titanium ion, zirconium ion, silver ion or copper ion.
[0015] The FAMACs in the (FAMACs)PbX3 are FA, MA and Cs; the FACs in the (FACs)PbX3 are FA and Cs; and the MACs in the (MACs)PbX3 are MA and Cs.
[0016] The present application also includes a photoelectric device, comprising the above-mentioned perovskite film or the perovskite film prepared by the above-mentioned preparation method.
[0017] The optoelectronic device includes one or more of a solar cell, a detector, a light emitting diode, a laser, a photocatalyst, an energy storage device, a sensor or a field effect transistor.
[0018] In addition to the preparation of the perovskite film, the method also includes the steps of depositing electrodes on the perovskite film and packaging.
[0019] The method for preparing a solar cell comprises: depositing carbon 60, bathocuproin, and silver in sequence on the perovskite film prepared above by thermal evaporation to obtain a solar cell prepared based on this process. In some specific implementations, the thickness of the carbon 60 is 20nm to 40nm, preferably 25nm, the thickness of the bathocuproin is 5nm to 15nm, preferably 9nm, and the thickness of the silver is 120nm to 200nm, preferably 150nm. In some specific implementations, the deposition rate of the thermal evaporation method is to Preferably The rate of depositing bathocuproin is to Preferably The rate of silver deposition is to Preferably
[0020] This application uses vapor deposition technology to prepare a lead bromide precursor layer with high crystalline quality and preferential orientation; the large-sized, highly oriented lead bromide grains provide an ideal reaction template for organic salt infiltration. The prepared perovskite film has a more complete reaction than the traditional solution method, and the crystallinity and grain size are significantly improved. In addition, this process avoids auxiliary devices such as anti-solvents and air knives, simplifies the process flow, avoids the resulting uncontrollable crystallization problem, and improves the repeatability of film preparation. BRIEF DESCRIPTION OF THE DRAWINGS
[0021] Figure 1 This is a morphology image of the lead bromide thin film provided in Example 1 of the present application;
[0022] Figure 2 This is a morphology diagram of the lead bromide thin film provided in Comparative Example 1 of the present application;
[0023] Figure 3 This is a morphology diagram of the perovskite film provided in Example 2 of the present application;
[0024] Figure 4 This is a morphology diagram of the perovskite film provided in Comparative Example 2 of the present application;
[0025] Figure 5 XRD characterization diagram of the perovskite film provided in Example 2 and Comparative Example 2 of the present application;
[0026] Figure 6 Device current-voltage diagram of the solar cell device provided in Example 3 and Comparative Example 3 of the present application;
[0027] Figure 7 This is a fluorescence spectrum of the perovskite film (PVSK-1) provided in Example 4 of the present application;
[0028] Figure 8 This is a fluorescence spectrum of the perovskite film (PVSK-2) provided in Example 5 of the present application;
[0029] Figure 9 A device current-voltage diagram of the solar cell device provided in Example 4 of the present application;
[0030] Figure 10 This is a device current-voltage diagram of the solar cell device provided in Example 5 of the present application. DETAILED DESCRIPTION
[0031] It should be understood that the expression "one or more of" includes individually each of the items recited after the expression and various combinations of two or more of the recited items, unless otherwise apparent from the context and usage. The expression "and / or" in conjunction with three or more recited items should be understood to have the same meaning, unless otherwise apparent from the context.
[0032] The terms "comprising", "having" or "containing", including their grammatical synonyms, should generally be understood as open and non-restrictive, e.g., not excluding other unrecited elements or steps, unless otherwise specifically stated or understood from the context.
[0033] It should be understood that the order of steps or the order in which certain actions are performed is not important as long as the application remains operable. Additionally, two or more steps or actions may be performed simultaneously.
[0034] The use of any and all examples or exemplary language such as "for example" or "including" herein is intended only to better illustrate the present application and does not limit the scope of the present application. No language in this specification should be construed as indicating any non-claimed element is essential to the practice of the present application.
[0035] In addition, the numerical ranges and parameters used to define this application are approximate values. The relevant numerical values in the specific examples have been presented as accurately as possible. However, any numerical value inherently inevitably contains standard deviations due to individual testing methods. Therefore, unless otherwise expressly stated, all ranges, amounts, values, and percentages used in this disclosure should be understood to be modified by the word "about." As used herein, "about" generally means that the actual value is within plus or minus 10%, 5%, 1%, or 0.5% of a particular value or range.
[0036] The present application provides a method for preparing a perovskite thin film, comprising:
[0037] vapor-depositing lead bromide on the surface of the substrate to obtain a lead bromide layer;
[0038] An organic salt is deposited on the surface of the lead bromide layer to obtain a perovskite film.
[0039] This application uses vapor deposition technology to prepare a lead bromide precursor layer with high crystalline quality and preferential orientation; the large-sized, highly oriented lead bromide grains provide an ideal reaction template for organic salt infiltration. The prepared perovskite film has a more complete reaction than the traditional solution method, and the crystallinity and grain size are significantly improved. In addition, this process avoids auxiliary devices such as anti-solvents and air knives, simplifies the process flow, avoids the resulting uncontrollable crystallization problem, and improves the repeatability of film preparation.
[0040] The present application is further described below with reference to the following examples. The scope of protection of the present application is not limited by the following examples.
[0041] Example 1
[0042] This embodiment provides a lead bromide thin film, and a method for preparing the lead bromide thin film includes:
[0043] The ITO film was ultrasonically treated with deionized water, acetone, and isopropanol for 20 minutes in sequence, heated and boiled for 5 minutes after the isopropanol treatment, and dried for later use; before preparing the transport layer, the ITO was treated with a UV cleaner for 20 minutes, and then a 0.5 mg / mL I-4PACz self-assembled molecular layer was spin-coated on the treated ITO film at a speed of 3000 rpm, and then PbBr2 with a thickness of 150 nm was evaporated on the I-4PACz substrate to obtain a lead bromide film prepared by vapor deposition.
[0044] Example 2
[0045] This embodiment provides a perovskite film, and a method for preparing the perovskite film includes:
[0046] The ITO film was ultrasonically treated with deionized water, acetone, and isopropanol for 20 minutes, followed by boiling for 5 minutes after the isopropanol treatment and drying. Before preparing the transport layer, the ITO film was treated with a UV cleaner for 20 minutes. A 0.5 mg / mL I-4PACz self-assembled molecular layer was then spin-coated at 3000 rpm on the treated ITO film. PbBr2 was then evaporated to a thickness of 150 nm on the I-4PACz substrate.
[0047] Then, a 70 mg / mL FABr precursor solution was scraped onto the PbBr2 film with a gap of 100 μm between the scraper and the substrate and a scraper movement speed of 5 mm / s. The film was annealed at 70°C for 3 min and then at 150°C for 20 min to obtain a FAPbBr3 perovskite film based on vapor-deposited lead bromide.
[0048] Example 3
[0049] This embodiment provides a solar cell device, and a method for preparing the solar cell device includes:
[0050] The ITO film was ultrasonically treated with deionized water, acetone, and isopropanol for 20 minutes, followed by heating and boiling for 5 minutes after the isopropanol treatment, and then drying for later use. The ITO film was treated with a UV cleaner for 20 minutes before preparing the transport layer. A 0.5 mg / mL I-4PACz self-assembled molecular layer was then spin-coated on the treated ITO film at 3000 rpm. PbBr2 was then evaporated to a thickness of 150 nm on the I-4PACz substrate.
[0051] Then, a 70 mg / mL FABr precursor solution was scraped onto the PbBr2 film with a gap of 100 μm between the scraper and the substrate and a scraper movement speed of 5 mm / s. The film was annealed at 70°C for 3 min and then at 150°C for 20 min to obtain a FAPbBr3 perovskite film based on vapor-deposited lead bromide.
[0052] The electron transport layer was prepared by thermal evaporation deposition at a depth of less than 5×10 -4 Pa under low vacuum, 25nm of carbon 60 was deposited at a rate of 9nm of bathocuproin was deposited at a rate of 150 nm of silver was deposited at a rate of , to obtain a solar cell device.
[0053] Example 4
[0054] This embodiment provides a perovskite film, and a method for preparing the perovskite film includes:
[0055] The ITO film was ultrasonically treated with deionized water, acetone, and isopropanol for 20 minutes, followed by boiling for 5 minutes after the isopropanol treatment and drying. Before preparing the transport layer, the ITO film was treated with a UV cleaner for 20 minutes. A 0.5 mg / mL I-4PACz self-assembled molecular layer was then spin-coated at 3000 rpm on the treated ITO film. PbBr2 was then evaporated to a thickness of 150 nm on the I-4PACz substrate.
[0056] Then, a 90 mg / mL FAI precursor solution was scraped onto the PbBr2 film with a gap of 100 μm between the scraper and the substrate and a scraper movement speed of 5 mm / s. The film was annealed at 70°C for 3 min and then annealed at 150°C for 20 min to obtain a mixed halogen wide-bandgap perovskite film (PVSK-1) prepared based on vapor-deposited lead bromide.
[0057] This embodiment also provides a solar cell device, wherein the preparation method of the solar cell device comprises: preparing an electron transport layer by thermal evaporation deposition, -4 Pa under low vacuum, 25nm of carbon 60 was deposited at a rate of 9nm of bathocuproin was deposited at a rate of 150 nm of silver was deposited at a rate of , to obtain a solar cell device.
[0058] Example 5
[0059] This embodiment provides a perovskite film, and a method for preparing the perovskite film includes:
[0060] The ITO film was ultrasonically treated with deionized water, acetone, and isopropanol for 20 minutes, followed by boiling for 5 minutes after the isopropanol treatment and drying. Before preparing the transport layer, the ITO film was treated with a UV cleaner for 20 minutes. A 0.5 mg / mL I-4PACz self-assembled molecular layer was then spin-coated at 3000 rpm on the treated ITO film. PbBr2 was then evaporated to a thickness of 150 nm on the I-4PACz substrate.
[0061] Then, a 20 mg / mL FACl precursor solution was scraped onto the PbBr2 film with a gap of 100 μm between the scraper and the substrate and a scraper movement speed of 5 mm / s. The film was annealed at 70°C for 3 min and then annealed at 150°C for 20 min to obtain a mixed halogen wide-bandgap perovskite film (PVSK-2) prepared based on vapor-deposited lead bromide.
[0062] This embodiment also provides a solar cell device, wherein the preparation method of the solar cell device comprises: preparing an electron transport layer by thermal evaporation deposition, -4 Pa under low vacuum, 25nm of carbon 60 was deposited at a rate of 9nm of bathocuproin was deposited at a rate of 150 nm of silver was deposited at a rate of , to obtain a solar cell device.
[0063] Comparative Example 1
[0064] This comparative example provides a lead bromide thin film, and the preparation method of the lead bromide thin film comprises:
[0065] The ITO film was ultrasonically treated with deionized water, acetone, and isopropanol for 20 minutes, followed by heating and boiling for 5 minutes after the isopropanol treatment and drying. The ITO film was treated with a UV cleaner for 20 minutes before forming the transport layer. A 0.5 mg / mL I-4PACz self-assembled molecular layer was then spin-coated on the treated ITO film at 3000 rpm. A 1.4 M lead bromide (PbBr2) precursor solution was then dripped between the scraper and substrate, with a gap of 100 μm between the scraper and substrate. The scraper's horizontal movement speed was 8 mm / s. -1 The wet film was immediately dried with a nitrogen (N2) air knife and then annealed at 80°C for 5 min to eliminate the solvent, obtaining a wet-processed lead bromide film.
[0066] Comparative Example 2
[0067] This comparative example provides a perovskite film, and the preparation method of the perovskite film includes:
[0068] The ITO film was ultrasonically treated with deionized water, acetone, and isopropanol for 20 minutes in sequence. After the isopropanol treatment, it was heated and boiled for 5 minutes and dried for later use. Before preparing the transport layer, the ITO was treated with a UV cleaner for 20 minutes. Then, a 0.5 mg / mL I-4PACz self-assembled molecular layer was spin-coated on the treated ITO film at a speed of 3000 rpm. Then, a certain amount of 1.4M PbBr2 precursor solution was dripped between the scraper and the substrate, where the gap between the scraper and the substrate was 100 μm; the horizontal movement speed of the scraper was 8 mm / s. -1 The wet film was immediately dried with a N2 air knife and then annealed at 80°C for 5 minutes to eliminate the solvent. After the substrate cooled to room temperature, a 70 mg / mL formamidinium hydrobromide (FABr) precursor solution was scraped onto the PbBr2 film with a gap of 100 μm between the scraper and the substrate at a scraper speed of 4 mm / s. The film was then dried with a N2 air knife and annealed at 100°C for 30 minutes to obtain a wet-processed formamidinium bromide perovskite (FAPbBr3) perovskite film.
[0069] Comparative Example 3
[0070] This comparative example provides a solar cell device, and the preparation method of the solar cell device includes:
[0071] The ITO film was ultrasonically treated with deionized water, acetone, and isopropanol for 20 minutes in sequence. After the isopropanol treatment, it was heated and boiled for 5 minutes and dried for later use. Before preparing the transport layer, the ITO was treated with a UV cleaner for 20 minutes. Then, a 0.5 mg / mL I-4PACz self-assembled molecular layer was spin-coated on the treated ITO film at a speed of 3000 rpm. Then, a certain amount of 1.4 M PbBr2 precursor solution was dripped between the scraper and the substrate, where the gap between the scraper and the substrate was 100 μm; the horizontal movement speed of the scraper was 8 mm / s. -1 The wet film was immediately dried with a N2 air knife and then annealed at 80 °C for 5 min to eliminate the solvent.
[0072] After the substrate was cooled to room temperature, a 70 mg / mL FABr precursor solution was scraped onto the PbBr2 film with a gap of 100 μm between the scraper and the substrate and a scraper movement speed of 4 mm / s. The film was dried with a N2 air knife and then annealed at 100°C for 30 min to obtain a FAPbBr3 perovskite film.
[0073] The electron transport layer was prepared by thermal evaporation deposition at a depth of less than 5×10 -4 Pa under low vacuum, 25nm of carbon sixty was deposited at a rate of 9nm of bathocuproin was deposited at a rate of 150nm of silver was deposited at a rate of , to obtain a solar cell device prepared by a wet process.
[0074] The morphology of the lead bromide film provided in Example 1 is as follows: Figure 1 As shown, it presents a layered large grain through-growth morphology; the morphology of the lead bromide film provided in Comparative Example 1 is as shown Figure 2 As shown, the layered structure has no obvious grain boundaries. The lead bromide film of Example 1 prepared by vapor deposition method shows a morphology of large grains and vertical growth of grains. Such a morphology is conducive to the diffusion reaction of organic salts in the next step to prepare high-quality perovskite films. The morphology of the perovskite film provided in Example 2 is shown in FIG. Figure 3 As shown, the morphology of the perovskite film provided in Comparative Example 2 is as follows Figure 4 As shown in FIG, it is obvious that the perovskite film prepared based on vapor deposition of lead bromide (Example 2) has a larger grain size, which is conducive to higher performance optoelectronic devices. The XRD characterization diagrams of the perovskite film provided in Example 2 and Comparative Example 2 are as follows: Figure 5 As shown (1 is comparative example 2, 2 is example 2), it can be seen that the reaction is incomplete in the wet preparation of the perovskite film (comparative example 2) and a large amount of lead bromide is still present, while the perovskite film based on the vapor deposition method of lead bromide (example 2) is the opposite and has a higher crystallinity. The device performance under different conditions is further characterized. The device efficiency diagram of the solar cell device provided in Example 3 and Comparative Example 3 is as follows Figure 6 As shown in FIG1 (1 is comparative example 3, 2 is example 3), the solar cell device provided in example 3 has a device efficiency of 10.8% due to the more outstanding perovskite film quality, which is much higher than the 7.2% of the solar cell device provided in comparative example 3. The fluorescence spectrum of the perovskite film (PVSK-1) provided in example 4 is shown in FIG1 Figure 7 As shown; the fluorescence spectrum of the perovskite film (PVSK-2) provided in Example 5 is shown Figure 8 The device current-voltage diagram of the solar cell device provided in Example 4 is shown in FIG. Figure 9 The device current-voltage diagram of the solar cell device provided in Example 5 is shown in FIG. Figure 10 shown.
[0075] The above is only a preferred specific implementation method of the present application, but the scope of protection of the present application is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes based on the technical solution and application concept of the present application within the technical scope disclosed in the present application, and they should be covered by the scope of protection of the present application.
Claims
1. A method for preparing a perovskite thin film, characterized in that: include: vapor-depositing lead bromide on the surface of the substrate to obtain a lead bromide layer; The lead bromide layer is reacted with an organic salt to obtain a perovskite film.
2. The preparation method according to claim 1, characterized in that The vapor-deposited lead bromide includes evaporating lead bromide; the particle size of the lead bromide is 20nm to 500nm.
3. The preparation method according to claim 2, characterized in that The evaporation temperature is 100°C to 1000°C; the evaporation pressure is 10 -6 Pa to 10 -5 Pa; the evaporation rate is to 4. The preparation method according to claim 1, characterized in that The thickness of the lead bromide layer is 1 nm to 10 6 nm.
5. The preparation method according to claim 1, characterized in that The organic salt includes one or more of formamidine ammonium halide, methylammonium halide, cesium halide, n-butylammonium halide, isobutylammonium halide, aminovaleric acid halide, 1-naphthylmethylammonium halide, phenethylammonium halide, n-butylammonium halide, benzylammonium halide, phenylpropylammonium halide, phenylbutylammonium halide, n-octylamine hydrohalide, ethylamine hydrohalide or guanidine hydrohalide.
6. The preparation method according to claim 1, characterized in that The reaction temperature is 20° C. to 400° C., and the reaction time is 1 min to 60 min.
7. The preparation method according to claim 1, characterized in that The lead bromide layer is mixed with an organic salt and reacted therewith, and the mixing method includes any one of spin coating, vapor deposition, immersion, spraying, blade coating, printing or thermal annealing assisted deposition.
8. A perovskite film, characterized in that It is prepared according to the preparation method according to any one of claims 1 to 7.
9. The perovskite thin film according to claim 8, characterized in that Including the structural formula FAPbX3, MAPbX3, CsPbX3, (FAMACs)PbX3, (FACs)PbX3, (MACs)PbX3 or L2A n-1 D n X 3n+1 Compounds; Wherein, X is one or more of Br, I or Cl, L is a large cation, and n is an integer from 1 to 10; the large cation includes one or more of a phenylethylammonium cation, an isopropylammonium cation, a thiopheneethylammonium cation, a 5-aminovaleric acid ammonium cation, a 1,4-butyldiammonium cation, a 1,3-propylenediammonium cation, an n-butylammonium cation, an isobutylammonium cation, an aminovaleric acid cation, a 1-naphthylmethylammonium cation, a phenylethylammonium cation, an n-butylammonium cation, a benzylammonium cation, a phenylpropylammonium cation, a phenylbutylammonium cation, an n-octylammonium cation, an ethylammonium cation or a guanidinium cation; A includes any one or more of a formamidine ion, a methylammonium ion or a cesium ion; and D includes one or more of a lead ion, a tin ion, a germanium ion, a bismuth ion, an antimony ion, an indium ion, a titanium ion, a zirconium ion, a silver ion or a copper ion.
10. A photoelectric device, characterized in that: The perovskite film comprises the perovskite film according to any one of claims 1 to 7 or the perovskite film prepared by the preparation method according to claim 8 or 9.