Forming diaphragm assembly, electron beam splitting module and multi-electron beam photoetching machine

Abstract

The invention discloses a forming diaphragm assembly, an electron beam splitting module and a multi-electron beam photoetching machine. The forming diaphragm assembly comprises a first cold plate with a first through hole; the first diaphragm array plate can do reciprocating motion in the extending direction of the first cold plate through a first moving mechanism so that part of the first diaphragm array plate can be located at the position corresponding to the first through hole, and the first diaphragm array plate is arranged in the extending direction of the first cold plate. Due to the fact that the position, corresponding to the first through hole of the first cold plate, of the first diaphragm array plate can be changed under the action of the first moving mechanism, electron beams can irradiate different positions of the first diaphragm array plate after penetrating through the first through hole, and the situation that the first diaphragm array plate is heated and deformed due to the fact that the same position is irradiated by the electron beams all the time is avoided; moreover, heat on the first diaphragm array plate at the corresponding position, except the first through hole, of the first cold plate can be quickly dissipated by means of the first cold plate, so that deformation of the first diaphragm array plate caused by electron beam irradiation is avoided.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of photoetching machine, and particularly relates to a shaped diaphragm assembly, an electron beam splitting module and a multi-electron beam photoetching machine. BACKGROUND

[0002] The electron beam photoetching machine realizes patterned writing by means of high-energy electron beam bombardment of photoresist, and has an irreplaceable position in high-resolution and high-precision mask preparation. However, with the continuous reduction of chip feature size, the efficiency of mask preparation by single electron beam photoetching machine is increasingly low, which seriously limits its large-scale application in the industrial field.

[0003] The multi-electron beam photoetching machine developed in recent years uses array electron beams for exposure, which significantly improves the mask processing efficiency and throughput capacity. However, as the core component for generating array electron beams, the diaphragm will block most of the electrons emitted by the electron gun during operation. After these high-energy electrons collide with the splitting module, a significant thermal effect is triggered, causing the diaphragm hole to deform under thermal stress. This deformation will directly affect the beam shape precision formed on the mask after the electron beam passes through the diaphragm hole, causing a decline in pattern quality, and ultimately adversely affecting the overall performance of the multi-electron beam photoetching machine.

[0004] Therefore, it is of great significance to develop a new and efficient heat dissipation technology to reduce the thermal effect of the diaphragm during operation, in order to improve its stability, precision and consistency. SUMMARY

[0005] In order to solve at least one of the foregoing problems, according to one aspect of the present application, a shaped diaphragm assembly is provided.

[0006] The shaped diaphragm assembly includes a first cold plate having a first through hole; and a first diaphragm array plate capable of reciprocating along the extension direction of the first cold plate by a first moving mechanism, so that part of it can be located at a position corresponding to the first through hole, and the first diaphragm array plate is arranged along the extension direction of the first cold plate.

[0007] Since the first diaphragm array plate can reciprocate along the extension direction of the first cold plate under the action of the first moving mechanism, the corresponding position of the first diaphragm array plate with the first through hole of the first cold plate can be changed, so that under the action of the first moving mechanism, the electron beam can be irradiated at different positions of the first diaphragm array plate after passing through the first through hole, thereby avoiding the first diaphragm array plate from being deformed due to heating caused by continuous irradiation of the electron beam at the same position. Moreover, under the action of the first moving mechanism, the heat in the area of the first diaphragm array plate not directly irradiated by the electron beam can be quickly dissipated by the first cold plate, thereby avoiding the first diaphragm array plate from being deformed due to heat accumulation.

[0008] In some embodiments, the first cold plate comprises a refrigerant inlet, a refrigerant outlet, and a first channel connecting the refrigerant inlet and the refrigerant outlet, the refrigerant inlet is arranged on at least one side of the first through hole along the extension direction of the first cold plate, and the first aperture array plate is arranged on the side of the first cold plate away from the refrigerant inlet and the refrigerant outlet. In this way, the heat dissipation efficiency of the first cold plate can be improved by supplying the first cold plate with refrigerant.

[0009] In some embodiments, a slit transmission area is arranged on the first aperture array plate, and the slits in the slit transmission area are arranged along the extension direction of the first cold plate. In this way, the shape of the electron beam spot transmitted through the slits can be prevented from changing during the movement of the first aperture array plate along the extension direction of the first cold plate. In some embodiments, the refrigerant inlet is arranged on the side of the refrigerant outlet close to the first through hole. In this way, the heat dissipation efficiency of the position of the first aperture array plate close to the first through hole can be ensured to be high, so that the heat at the position of the first aperture array plate close to the first through hole can be quickly dissipated, thereby improving the heat dissipation efficiency of the entire first aperture array plate.

[0010] In some embodiments, two groups of first cold plates are arranged, and the two groups of first cold plates are arranged on the two sides of the first aperture array plate along the electron beam irradiation direction. In this way, the heat dissipation efficiency of the shaped aperture assembly can be further improved by increasing the number of first cold plates.

[0011] In some embodiments, the first channel is enclosed by a plurality of heat dissipation fins extending along the extension direction of the first cold plate and a first frame surrounding the outside of the heat dissipation fins. In this way, the heat dissipation effect of the first cold plate on the first aperture array plate can be improved by the heat dissipation fins.

[0012] In some embodiments, the first aperture array plate sequentially comprises a conductive protective layer, a heat-conductive layer, and a main body layer along the electron beam irradiation direction, and the conductive protective layer is grounded. Since the electron beam irradiates the first aperture array plate first on the conductive protective layer, the conductive protective layer can protect the heat-conductive layer and the main body layer from being damaged by the high-energy electron beam. Moreover, the conductive protective layer grounded can timely guide the accumulated charges on its surface out to avoid the interference of the charges on the surface of the first aperture array plate with the electron beam. Meanwhile, the heat-conductive layer arranged between the conductive protective layer and the main body layer can realize the rapid transfer of the heat inside the first aperture array plate, so that the first aperture array plate can maintain good temperature uniformity.

[0013] In some embodiments, the heat-conductive layer is a diamond film, and the main body layer is made of silicon. Since the diamond film has excellent heat conductivity, it can realize the rapid transfer of the heat inside the first aperture array plate, so that the first aperture array plate can maintain good temperature uniformity. The main body layer made of silicon can ensure the stability of the slits processed on the main body layer.

[0014] In some embodiments, the distance between the first cold plate and the slit transmission region in the electron beam irradiation direction is 1mm-5mm. Controlling the distance between the first cold plate and the slit transmission region in the electron beam irradiation direction, on the one hand, can ensure the effect of the first cold plate absorbing the heat radiated by the first aperture array plate; on the other hand, when the first moving mechanism drives the first aperture array plate to reciprocate along the extension direction of the first cold plate relative to the first cold plate, friction or collision between the first cold plate and the slit transmission region can be avoided, thereby affecting the normal use of the first aperture array plate.

[0015] In some embodiments, the surface of the first cold plate facing the first aperture array plate is provided with a radiation absorption coating, and the radiation absorption rate of the radiation absorption coating is controlled to be above 90%. In this way, the effect of the first cold plate absorbing the heat radiated by the first aperture array plate can be ensured.

[0016] According to another aspect of the present application, an electron beam splitting module is provided. The electron beam splitting module comprises the aforementioned shaped aperture assembly. Due to the first aperture array plate being capable of reciprocating along the extension direction of the first cold plate relative to the cold plate under the action of the first moving mechanism to change the corresponding position of the first aperture array plate with the first through hole of the first cold plate, when the electron beam passes through the first through hole under the action of the first moving mechanism, the electron beam can irradiate different positions of the first aperture array plate to avoid the first aperture array plate from being heated and deformed due to the same position being continuously irradiated by the electron beam; and under the action of the first moving mechanism, the heat in the area of the first aperture array plate not directly irradiated by the electron beam can be quickly dissipated by the first cold plate to avoid the first aperture array plate from being heat deformed due to heat accumulation.

[0017] In some embodiments, two groups of shaped aperture assemblies are arranged along the electron beam irradiation direction, and the extension direction of the first cold plate of one group of shaped aperture assemblies is arranged perpendicular to the extension direction of the first cold plate of the other group of shaped aperture assemblies, and the extension direction of the first cold plate of both groups of shaped aperture assemblies is arranged perpendicular to the electron beam irradiation direction. In this way, the electron beam passing through the electron beam splitting module can be made to be columnar by the two groups of shaped aperture assemblies arranged along the electron beam irradiation direction and having the extension direction perpendicular to each other, and the cross section of the electron beam can be rectangular or square. The present application forms an array of electron beams by two shaped aperture array plates, which can reduce the area of each aperture array plate blocking the electron beam, thereby distributing the heat of the electron beam received by a traditional single aperture array plate (array electron beam transmission holes are directly arranged on the aperture array plate) on two shaped aperture array plates, further reducing the amount of heat generated by the shaped aperture array plate due to electron beam irradiation, and solving the problems of appearance distortion, heat deformation, and blackout delay of the electron beam after passing through the electron beam splitting module, thereby improving the lithography precision.

[0018] According to another aspect of the present application, a multi-electron beam lithography machine is provided. The multi-electron beam lithography machine comprises the aforementioned shaped aperture assembly; or comprises the aforementioned electron beam splitting module. Since the first aperture array plate is capable of reciprocating along the extension direction of the first cold plate under the action of the first moving mechanism to change the corresponding position of the first aperture array plate with the first through hole of the first cold plate, the first aperture array plate can be irradiated at different positions under the action of the first moving mechanism after the electron beam passes through the first through hole, so as to avoid the first aperture array plate from being deformed due to the continuous irradiation of the electron beam at the same position; and the heat of the area of the first aperture array plate which is not directly irradiated by the electron beam can be quickly dissipated by the first cold plate under the action of the first moving mechanism, so as to avoid the deformation of the first aperture array plate due to the irradiation of the electron beam.

[0019] In some embodiments, the multi-electron beam lithography machine further comprises a blanking array plate arranged in the electron beam exit direction of the shaped aperture assembly. In this way, the electron beam passing through the shaped aperture assembly can be controlled by the blanking array plate to pass through or not to pass through the blanking array plate, so as to realize the control of the on-off of the electron beam.

[0020] In some embodiments, the blanking array plate comprises a substrate layer and an integrated circuit layer arranged in sequence along the electron beam irradiation direction; the substrate layer and the integrated circuit layer are provided with second through holes at corresponding positions; and a deflection electrode and a grounding electrode are arranged in the second through holes. In this way, whether an electric field is formed between the deflection electrode and the grounding electrode can be controlled by whether a voltage is applied to the deflection electrode, and then whether the electron beam passing between the deflection electrode and the grounding electrode is deflected can be controlled. When a voltage is applied to the deflection electrode, the deflected electron beam is blocked by hitting the grounding electrode, and the area between the deflection electrode and the grounding electrode is closed; when no voltage is applied to the deflection electrode, the electron beam passing between the deflection electrode and the grounding electrode is not deflected, and the area between the deflection electrode and the grounding electrode is in an open state.

[0021] In some embodiments, the length of the grounding electrode is longer than that of the deflection electrode, and the grounding electrode extends to the outside of the second through hole in the exit direction of the electron beam. In this way, it can be ensured that the deflected electron beam hits the grounding electrode completely, and the electron beam in the through hole is prevented from overflowing to interfere with other components. BRIEF DESCRIPTION OF DRAWINGS

[0022] Figure 1 Structure schematic diagram of the shaped aperture assembly of an embodiment of the present application; Figure 2 Structure schematic diagram of the shaped aperture assembly shown in Figure 1 Structure schematic diagram of the disassembled state of the shaped aperture assembly shown in Figure 3 Structure schematic diagram of the first cold plate of the shaped aperture assembly shown in Figure 1 Structure schematic diagram of the disassembled state of the first cold plate of the shaped aperture assembly shown in Figure 4 for Figure 3 A schematic diagram of the enlarged structure of the forming aperture assembly shown; Figure 5 This is a schematic structural diagram of an aperture array plate according to one embodiment of the present application; Figure 6 for Figure 5 A schematic diagram of the enlarged structure of the aperture array plate at position B is shown; Figure 7 for Figure 5 A schematic diagram of the cross-sectional structure of the aperture array plate along the CC direction is shown; Figure 8 for Figure 7 The enlarged structural diagram of the aperture array plate at position D is shown; Figure 9 for Figure 1 A schematic cross-sectional view of the formed aperture assembly shown; Figure 10 for Figure 1 The structure diagram of the shaped aperture assembly shown is used in a multi-electron beam lithography machine; Figure 11 This is a schematic structural diagram of a shaped aperture assembly according to another embodiment of the present application; Figure 12 for Figure 11 A schematic cross-sectional view of the shaped aperture array assembly shown; Figure 13 This is a schematic structural diagram of an electron beam splitting module according to one embodiment of the present application; Figure 14 Schematic diagram of the heating and mobile heat dissipation principle of the electron beam splitting module according to one embodiment of the present application; Figure 15 Schematic diagram of the morphology transformation of an electron beam passing through an electron beam splitting module according to one embodiment of the present application; Figure 16 This is a schematic structural diagram of a multi-electron beam lithography machine according to one embodiment of the present application; Figure 17 for Figure 16 Schematic diagram of the layout structure of the electron beam splitting module and the blanking array board in the multi-electron beam lithography machine shown; Figure 18 This is a schematic structural diagram of a blanking array board according to one embodiment of the present application; 20, first cold plate; 201, first through hole; 2011, first sub-through hole; 2012, second sub-through hole; 21, cover plate; 211, refrigerant inlet; 212, refrigerant outlet; 22, heat exchange plate; 221, first channel; 2211, inlet chamber; 2212, outlet chamber; 2213, interfin passage; 2214, first frame; 222, heat dissipation fin; 30, first moving mechanism; 31, guide rail; 311, sliding groove; 40, first diaphragm array plate; 41, conductive protective layer; 42, heat-conductive layer; 43, main body layer; 401, slit passing area; 4011, slit; 402, support area; 403, second frame; 50, blanking array plate; 501, second through hole; 51, base layer; 52, integrated circuit layer; 53, deflection electrode; 54, grounding electrode; 61, electron beam; 62, exposure heating area; 63, radiative cooling area; 64, array electron beam I; 65, array electron beam II; 71, electron gun; 72, collimating lens; 73, reduction lens; 74, deflector; 75, projection lens; 76, target material; 77, workpiece table; 78, vacuum chamber. DETAILED DESCRIPTION

[0023] It should be noted that the embodiments and features of the embodiments in the present application can be combined with each other without conflict.

[0024] It should also be noted that, in this document, relational terms such as first and second, and the like can be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises", "comprising", "includes", "including", "contains", "containing" or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises, includes, contains or contains elements or steps not expressly listed is also covered. Without more limitations, an element defined by an "includes" statement does not exclude the existence of additional identical elements that are also included in an process, method, article or apparatus that includes the stated element. The terms "a" and "an" as used herein indicate "one or more" of the entity to which the terms refer, unless otherwise indicated. The terms "first", "second", "third", "fourth", etc. as used herein do not imply any temporal, logical or other kind of precedence, but are merely used to distinguish one element from another.

[0025] In addition, for the purpose of describing the present application, spatial relative terms such as "below", "lower", "bottom", "above", "upper", and the like can be used to describe one element or component's relationship to another element or component as illustrated in the figures. The spatial relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device can be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial relative descriptors used herein interpreted accordingly.

[0026] In order to make the purposes, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort should fall within the scope of the present application.

[0027] Figures 1 to 10 A shaped aperture assembly according to a first embodiment of the present application is shown schematically.

[0028] As shown in Figure 1 , the shaped aperture assembly comprises a first cold plate 20, a first moving mechanism 30 and a first aperture array plate 40; the first cold plate 20 is integrally formed or processed with a first through hole 201; the first aperture array plate 40 is arranged along the extension direction X of the first cold plate 20; the first moving mechanism 30 is arranged to drive the first aperture array plate 40 to reciprocate relative to the first cold plate 20 along the extension direction of the first cold plate 20, so that at least part of the first aperture array plate 40 can be located at a position corresponding to the first through hole 201.

[0029] As one of the embodiments of the first moving mechanism 30, as shown in Figure 2 , the first moving mechanism 30 comprises a guide rail 31 provided with a sliding groove 311, the sliding groove 311 is arranged along the extension direction X of the first cold plate 20, and the first aperture array plate 40 is adapted to the sliding groove 311. In some preferred embodiments, as shown in Figure 2 , the first moving mechanism 30 is arranged in two groups, and the two groups are arranged on the two sides of the first aperture array plate 40 respectively, so as to improve the stability of the first moving mechanism 30 driving the first aperture array plate 40 to move relative to the first cold plate 20 along the extension direction of the first cold plate 20.

[0030] Since the first aperture array plate 40 can reciprocate relative to the first cold plate 20 along the extension direction of the first cold plate 20 under the action of the first moving mechanism 30, so as to change the corresponding position of the first aperture array plate 40 with the first through hole 201 of the first cold plate 20, so that under the action of the first moving mechanism 30, the electron beam 61 can irradiate different positions of the first aperture array plate 40 after passing through the first through hole 201, so as to avoid the first aperture array plate 40 from being deformed due to heating caused by the continuous irradiation of the electron beam 61 at the same position; and under the action of the first moving mechanism 30, the heat in the area of the first aperture array plate 40 which is not directly irradiated by the electron beam can be quickly dissipated by means of the first cold plate 20, so as to avoid the first aperture array plate 40 from being deformed due to heat accumulation.

[0031] As one of the embodiments of the first aperture array plate 40, as shown in Figure 2 ,Figure 5 and Figure 6 As shown, the first aperture array plate 40 includes a slit transmission area 401 having multiple groups of array-distributed slits 4011. The slits 4011 in the slit transmission area 401 are arranged along the extension direction of the first cold plate 20 to prevent the shape of the electron beam spot passing through the slits 4011 from changing during the movement of the first aperture array plate 400 along the extension direction of the first cold plate 20. The outer periphery of the slit transmission area 401 is connected to the support area 402. Figure 2 As shown, the outer periphery of the support area 402 is connected to a second frame 403 that can adapt to the slide groove 311. In some embodiments, as shown in FIG. Figure 7 and Figure 8 As shown, the first aperture array plate 40 is sequentially provided with a conductive protective layer 41, a thermal conductive layer 42, and a main body layer 43 along the direction of the electron beam 61. The conductive protective layer 41 is grounded. Since the electron beam 61 strikes the first aperture array plate 40 first, the conductive protective layer 41 protects the thermal conductive layer 42 and the main body layer 43 from damage by the high-energy electron beam 61. Furthermore, the grounding of the conductive protective layer 41 allows for the timely removal of surface charges accumulated on the surface of the first aperture array plate 40, preventing such charges from interfering with the electron beam 61. Furthermore, the thermal conductive layer 42 positioned between the conductive protective layer 41 and the main body layer 43 facilitates rapid heat transfer within the first aperture array plate 40, enabling the first aperture array plate 40 to maintain good temperature uniformity. In some embodiments, the conductive protective layer 41 is a low-resistance metal film, such as one made of gold, silver, or copper. In some embodiments, the thermal conductive layer 42 is a diamond film, and the main body layer 43 is made of silicon. The slits 4011 are formed on the main layer 43 using microfabrication processes such as MEMS (Microfabrication Process). The conductive protective layer 41 and thermal conductive layer 42 are deposited on the surface of the main layer 43 using a vapor deposition process. Diamond film has excellent thermal conductivity, enabling rapid heat transfer within the first aperture array plate 40, maintaining good temperature uniformity. The main layer 43 is made of silicon to ensure the stability of the slits 4011 fabricated therein. In some embodiments, the width W of the slits 4011 ranges from 4μm to 6μm, and the spacing between adjacent slits 4011 ranges from 20μm to 40μm. This ensures the structural strength of the slit transmission area 401 while ensuring the number of slits 4011. In some embodiments, the second frame 403 is made of a non-magnetic metal or a hard material, such as brass or aluminum alloy. In some embodiments, the thickness of the support area 402 ranges from 0.8 mm to 1.5 mm, which is greater than the thickness of the slit-transmitting area 401 ranges from 200 μm to 600 μm.

[0032] As one of the embodiments of the first cold plate 20, as shown in Figure 3 the first cold plate 20 includes a refrigerant inlet 211, a refrigerant outlet 212, and a first channel 221 connecting the refrigerant inlet 211 and the refrigerant outlet 212, which are arranged on at least one side of the first through hole 201 along the extension direction of the first cold plate 20, and the first diaphragm array plate 40 is arranged on the side of the first cold plate 20 away from the refrigerant inlet 211 and the refrigerant outlet 212, so as to improve the heat dissipation efficiency of the first cold plate 20 by introducing the refrigerant into the first cold plate 20. Preferably, the refrigerant inlet 211 is arranged on the side close to the first through hole 201 of the refrigerant outlet 212, so as to ensure that the heat dissipation efficiency of the position of the first diaphragm array plate 40 close to the first through hole 201 is high, thereby helping to quickly dissipate the heat of the position of the first diaphragm array plate 40 close to the first through hole 201, and improving the heat dissipation efficiency of the entire first diaphragm array plate 40. Preferably, the surface of the first cold plate 20 facing the first diaphragm array plate 40 is provided with a radiation absorption coating, and the radiation absorption rate of the radiation absorption coating is controlled to be above 90%, so as to ensure the effect of the first cold plate 20 absorbing the radiation heat of the first diaphragm array plate 40. In some embodiments, the radiation absorption coating is obtained by blackening treatment or coating a high absorption coating on the surface of the first cold plate 20 facing the first diaphragm array plate 40. Preferably, a set of refrigerant inlets 211 and refrigerant outlets 212 are arranged on both sides of the first through hole 201 along the extension direction of the first cold plate 20, so as to improve the heat dissipation efficiency.

[0033] In some embodiments, continuing to refer to Figure 3 the first cold plate 20 includes a cover plate 21 and a heat exchange plate 22; the cover plate 21 covers the surface of one side of the heat exchange plate 22; the refrigerant inlet 211 and the refrigerant outlet 212 are integrally formed, processed or connected on the surface of the cover plate 21 away from the heat exchange plate 22; the cover plate 21 and the heat exchange plate 22 are integrally formed or processed with a first sub-through hole 2011 and a second sub-through hole 2012 at the corresponding positions respectively, and when the cover plate 21 covers the heat exchange plate 22, the first sub-through hole 2011 and the second sub-through hole 2012 together constitute the first through hole 201; the heat exchange plate 22 is integrally formed or processed with an inlet chamber 2211 corresponding to and communicating with the refrigerant inlet 211, and an outlet chamber 2212 corresponding to and communicating with the refrigerant outlet 212; the refrigerant can be water, fluorinated liquid or liquid metal; the refrigerant realizes single-phase convective heat exchange or two-phase flow boiling heat exchange in the heat exchange plate 22. As Figure 3 and Figure 4As shown, the heat exchange plate 22 is also connected to an array of heat dissipating fins 222. Inter-fin channels 2213 are formed between adjacent heat dissipating fins 222. A first frame 2214 is provided on the periphery of the heat dissipating fins 222 to form an inlet chamber 2211 and an outlet chamber 2212 between the ends of the heat dissipating fins 222 and the first frame 2214. The inter-fin channels 2213 communicate with the inlet chamber 2211 and the outlet chamber 2212 to form a first channel 221. Preferably, multiple groups of heat dissipating fins 222 are arranged in an array in a direction perpendicular to the extension direction X of the first cold plate 20, and the inter-fin channels 2213 formed between adjacent heat dissipating fins 222 are arranged along the extension direction X of the first cold plate 20. As a result, the heat dissipation effect of the first cold plate 20 on the first aperture array plate 40 can be improved by the heat dissipating fins 222. In some embodiments, the heat dissipating fins 222 and the inter-fin channels 2213 occupy more than 70% of the area of ​​the heat exchange plate 22 to ensure heat exchange effect.

[0034] In other embodiments, the first cold plate 20 may also be a cold plate commonly used in the prior art.

[0035] In some embodiments, as Figure 9 As shown, the distance d1 between the first cold plate 20 and the slit transmission area 401 along the irradiation direction of the electron beam 61 ranges from 1 mm to 5 mm. Controlling the distance between the first cold plate 20 and the slit transmission area 401 along the irradiation direction of the electron beam 61 ensures that the first cold plate 20 effectively absorbs heat radiated by the first aperture array plate 40. Furthermore, when the first moving mechanism 30 drives the first aperture array plate 40 to reciprocate relative to the first cold plate 20 along the extension direction of the first cold plate 20, friction or collision between the first cold plate 20 and the slit transmission area 401, which could hinder the movement of the first aperture array plate 40 or cause damage to the first aperture array plate 40, is avoided.

[0036] As another embodiment of the first moving mechanism 30 , the first moving mechanism 30 includes a gear rotatably disposed on the first aperture array plate 40 and a rack matched with the gear, and the rack is disposed along the extension direction of the first cold plate 20 .

[0037] When the shaped aperture assembly of the present application is used on a multi-electron beam lithography machine, Figure 10As shown, the shaped aperture assembly can be arranged on the side of the collimating lens 72 away from the electron gun 71, and the shaped aperture assembly can be arranged in two groups in the direction of emission of the electron beam 61 emitted by the electron gun 71. The collimating lens 72 in the vacuum chamber 78 shapes and amplifies the divergent electron beam 61 emitted by the electron gun 71 to form a parallel electron beam 61. The parallel electron beam 61 passes through the slits 4011 of the first aperture array plate 40 of the two groups of shaped aperture assemblies, and then enters the blanking array plate 50 to form a columnar electron beam 61. The blanking array plate 50 comprises through holes corresponding to the columnar electron beam 61 and beam shutter units arranged in the through holes. Each beam shutter unit is used to independently control the on-off of the corresponding electron beam 61. The deflected electron beam 61 is blocked by the grounded electrode 54 in the beam shutter unit and cannot enter the subsequent assembly. The undetected electron beam 61 can pass through the aperture hole of the blanking array plate 50 and enter the reducing lens 73 for reduction and convergence. The electron beam 61 array passing through the blanking array plate 50 enters the projection lens 75 and the deflector 74. The projection lens 75 shapes the electron beam 61 array into a parallel beam. Under the action of the deflector 74, the electron beam 61 array realizes two-dimensional scanning on the surface of the target material 76. In order to meet the lithography needs of a large-area sample, the sample is placed on the multi-degree-of-freedom precision workpiece table 77.

[0038] Figure 11 and Figure 12 The shaped aperture assembly according to the second embodiment of the present application is schematically shown.

[0039] As Figure 11 and Figure 12 shown, the shaped aperture assembly of the present embodiment is improved on the basis of the shaped aperture assembly of the first embodiment. The shaped aperture assembly comprises two groups of first cold plates 20, which are arranged on the two sides of the first aperture array plate 40 in the direction of irradiation of the electron beam 61, so as to further improve the heat dissipation efficiency of the shaped aperture assembly by increasing the number of the first cold plates 20.

[0040] In some embodiments, as Figure 12 shown, compared with the shaped aperture assembly of the first embodiment, the distance range d2 between the newly added first cold plate 20 of the shaped aperture assembly and the slitted transmission area 401 in the direction of irradiation of the electron beam 61 is also 1mm-5mm, so as to avoid friction or collision between the first cold plate 20 and the slitted transmission area 401 when the first moving mechanism 30 drives the first aperture array plate 40 to reciprocate relative to the first cold plate 20 along the extension direction of the first cold plate 20, thereby hindering the movement of the first aperture array plate 40 or causing damage to it, while ensuring the effect of the first cold plate 20 absorbing the heat radiated by the first aperture array plate 40.

[0041] Figures 13 to 15An electron beam splitting module according to a first embodiment of the present application is schematically shown.

[0042] As shown in Figure 13 , the electron beam splitting module comprises the aforementioned shaped aperture assembly. Since the first aperture array plate 40 is capable of reciprocating along the extension direction of the first cold plate 20 under the action of the first moving mechanism 30 to change its corresponding position with the first through hole 201 of the first cold plate 20, the first aperture array plate 40 can be irradiated by the electron beam 61 at different positions under the action of the first moving mechanism 30 after passing through the first through hole 201, so as to avoid the first aperture array plate 40 from being deformed due to the heat generated by the continuous irradiation of the electron beam 61 at the same position; moreover, the heat generated at the position of the first aperture array plate 40 which is not directly irradiated by the electron beam can be quickly dissipated by the first cold plate 20 under the action of the first moving mechanism 30, so as to avoid the deformation of the first aperture array plate 40 due to the accumulation of heat.

[0043] In some embodiments, continuing to refer to Figure 13 , the shaped aperture assembly is provided with two groups along the irradiation direction of the electron beam 61, one group of the shaped aperture assembly and the other group of the shaped aperture assembly are arranged perpendicular to each other along the extension direction of the first cold plate 20, and the extension direction of the first cold plate 20 of the two groups of the shaped aperture assembly are both perpendicular to the irradiation direction of the electron beam 61. The projections of the first through hole 201 of the two groups of the shaped aperture assembly in the irradiation direction of the electron beam 61 overlap with each other. In this way, the electron beam 61 passing through the electron beam splitting module can be made into a columnar shape by the two groups of the shaped aperture assembly with the extension direction perpendicular to each other arranged along the irradiation direction of the electron beam 61; moreover, when the slits 4011 of the slit transmission area 401 provided on the first aperture array plate 40 of the shaped aperture assembly are arranged along the extension direction of the first cold plate 20, as shown in Figure 15 , the electron beam 61 passing through the first group of the shaped aperture assembly first forms an array electron beam I 64 in a platelet structure, and the electron beam 61 passing through the second group of the shaped aperture assembly forms an array electron beam II 65 in a columnar structure; since the electron beam 61 is irradiated on the first group of the shaped aperture assembly and the second group of the shaped aperture assembly, an exposure heating area 62 is formed at the irradiation position, and a radiation cooling area 63 is formed at other areas (as shown in Figure 14As shown in FIG2 ), when the forming aperture assembly is moved relative to the first cold plate 20, the position cooled by the radiation cooling zone 63 can be moved to the position irradiated by the electron beam 61, and the exposure heating zone 62 can be moved to the radiation cooling zone 63, so that the positions on the forming aperture assembly can be alternately irradiated by the electron beam 61, thereby preventing the same position of the forming aperture assembly from being irradiated by the electron beam 61 for a long time and being overheated and deformed; moreover, the present invention forms an electron beam array by two forming aperture array plates 40, which can reduce the area of ​​each aperture array plate blocking the electron beam 61, thereby reducing the traditional single aperture array plate (array electron beam transmission holes are directly provided on the aperture array plate, similar to Figure 18 The electron beam heat received by the first aperture array plate (shown in the structure) is distributed across the two aperture array plates, further reducing the amount of heat generated by the electron beam 61 on the first aperture array plate 40. This, in turn, addresses issues such as morphological distortion, thermal deformation, and blanking delay that can occur after the electron beam 61 passes through the electron beam splitting module, thereby improving photolithography accuracy. The two sets of forming aperture assemblies, arranged along the irradiation direction of the electron beam 61, are positioned perpendicular to each other, ensuring that the electron beam 61 is transformed into a square beam spot after passing through the electron beam splitting module.

[0044] Figures 16 to 18 The light column system and aperture assembly of the multi-electron beam 61 lithography machine according to the first embodiment of the present invention are schematically shown.

[0045] like Figure 16 and Figure 17 As shown, the multi-electron beam 61 lithography machine includes the aforementioned shaped aperture assembly; or includes the aforementioned electron beam splitting module. Because the first aperture array plate 40, under the action of the first moving mechanism 30, can reciprocate relative to the first cold plate 20 along the extension direction of the cold plate to change its corresponding position with the first through hole 201 of the first cold plate 20, when the electron beam 61 passes through the first through hole 201, it can irradiate different positions of the first aperture array plate 40 under the action of the first moving mechanism 30, thereby preventing the first aperture array plate 40 from being heated and deformed due to being continuously irradiated by the electron beam 61 at the same position. Moreover, under the action of the first moving mechanism 30, heat in areas of the first aperture array plate 40 that are not directly irradiated by the electron beam can be quickly dissipated by the first cold plate 20, thereby preventing the first aperture array plate 40 from being thermally deformed due to irradiation by the electron beam 61.

[0046] In some embodiments, as Figure 16 and Figure 17 As shown, the multi-electron beam 61 lithography machine optical column system also includes a blanking array plate 50 disposed in the direction of exit of the electron beam 61 of the shaped aperture assembly. Thus, the electron beam 61 passing through the shaped aperture assembly can be controlled by the blanking array plate 50 to determine whether it can enter the subsequent assembly, thereby achieving on-off control of the electron beam 61.

[0047] In some embodiments, as Figure 18 As shown, the blanking array panel 50 includes a base layer 51 and an integrated circuit layer 52, which are sequentially arranged along the irradiation direction of the electron beam 61. Second through-holes 501 are provided at corresponding positions of the base layer 51 and the integrated circuit layer 52. A deflection electrode 53 and a ground electrode 54 are disposed in the second through-hole 501. Thus, by applying a voltage to the deflection electrode 53, whether an electric field is formed between the deflection electrode 53 and the ground electrode 54 can be controlled, thereby controlling whether the electron beam 61 passing between the deflection electrode 53 and the ground electrode 54 is deflected. When a voltage is applied to the deflection electrode 53, the deflected electron beam 61 strikes the ground electrode 54 and is blocked, closing the area between the deflection electrode 53 and the ground electrode 54. When no voltage is applied to the deflection electrode 53, the electron beam 61 passing between the deflection electrode 53 and the ground electrode 54 is not deflected, and the area between the deflection electrode 53 and the ground electrode 54 is open. Preferably, the ground electrode 54 is longer than the deflection electrode 53, and the ground electrode 54 extends to the outside of the second through hole 501 in the emission direction of the electron beam 61. This arrangement can fully ensure that the deflected electron beam hits the ground electrode, preventing the electron beam in the through hole from overflowing and interfering with other components.

[0048] In some implementations, the deflection electrode 53 and the ground electrode 54 constitute a beam gate unit of an embodiment of the present application. The aperture pitch of the beam gate unit, that is, the distance N between the deflection electrode 53 and the ground electrode 54, ranges from 6 μm to 8 μm, and the distance N between the deflection electrode 53 and the ground electrode 54 is controlled to be slightly larger than the width W of the slit 4011.

[0049] In the present application, the electron gun 71, the collimating lens 72, the shaping aperture assembly, the blanking array plate 50, the demagnifying lens 73, the deflector 74, the projection lens 75, the target material 76 (chip / mask plate) and the worktable are all located in the vacuum chamber 78; the vacuum chamber 78 provides a vacuum working environment and electromagnetic shielding protection for the aforementioned components; the electron gun 71 is used to emit the electron beam 61; the collimating lens 72 shapes and magnifies the divergent electron beam 61 emitted by the electron gun 71 to form a parallel electron beam 61; the parallel electron beam 61 enters the blanking array plate 50 after passing through the two sets of shaping aperture assemblies to form a columnar electron beam 61; the blanking array plate 50 contains through holes corresponding to the columnar electron beam 61 and beam shutter units arranged in the through holes; each beam shutter unit is used to independently control the on-off of the corresponding electron beam 61; the deflected electron beam 61 is blocked by the grounded electrode 54 in the beam shutter unit and cannot enter the subsequent components; while the un-deflected electron beam 61 can pass through the aperture holes on the blanking array plate 50, enter the demagnifying lens 73 for demagnification and convergence; the electron beam 61 array passing through the blanking array plate 50 enters the projection lens 75 and the deflector 74; the projection lens 75 shapes the electron beam 61 array into a parallel beam; under the action of the deflector 74, the electron beam 61 array realizes two-dimensional scanning on the surface of the target material 76; in order to meet the photolithography needs of large-area samples, the sample is placed on the multi-degree-of-freedom precision worktable 77.

[0050] In the present application, the connection or installation without special emphasis is fixed connection. The fixed connection can be realized as detachable connection or non-detachable connection commonly used in the prior art. The detachable connection can be realized by the prior art, such as threaded connection or key connection. The non-detachable connection can also be realized by the prior art, such as welding or gluing.

[0051] The above only describes some embodiments of the present application. For those skilled in the art, without departing from the concept of the present application, several modifications and improvements can be made, which are all within the protection scope of the present application.

Claims

1. A shaped aperture assembly, characterized in that: include: a first cold plate (20) having a first through hole (201); and a first aperture array plate (40) capable of reciprocating along the extension direction of the first cold plate (20) through a first moving mechanism (30) so that a portion thereof can be located at a position corresponding to the first through hole (201), wherein the first aperture array plate (40) is arranged along the extension direction of the first cold plate (20).

2. The shaped aperture assembly according to claim 1, characterized in that The first cold plate (20) comprises a refrigerant inlet (211) and a refrigerant outlet (212) arranged on at least one side of the first through hole (201) along an extension direction of the first cold plate (20), and a first channel (221) connecting the refrigerant inlet (211) and the refrigerant outlet (212); the first aperture array plate (40) is arranged on a side of the first cold plate (20) away from the refrigerant inlet (211) and the refrigerant outlet (212); and / or A slit transmission area (401) is provided on the first aperture array plate (40), and the slits (4011) in the slit transmission area (401) are provided along the extension direction of the first cold plate (20).

3. The shaped aperture assembly according to claim 2, characterized in that The refrigerant inlet (211) is arranged on a side of the refrigerant outlet (212) close to the first through hole (201); and / or Two groups of the first cold plates (20) are provided, and the two groups of first cold plates (20) are respectively arranged on both sides of the first aperture array plate (40) along the irradiation direction of the electron beam (61).

4. The shaped aperture assembly according to claim 3, characterized in that The first channel (221) is formed by a plurality of groups of heat dissipation fins (222) extending along the extension direction of the first cold plate (20) and a first frame (2214) surrounding the outside of the heat dissipation fins (222); and / or The first aperture array plate (40) is provided with a conductive protective layer (41), a heat conductive layer (42) and a main body layer (43) in sequence along the irradiation direction of the electron beam (61), and the conductive protective layer (41) is grounded.

5. The shaped aperture assembly according to any one of claims 2 to 4, characterized in that The distance between the first cold plate (20) and the slit transmission area (401) along the irradiation direction of the electron beam (61) ranges from 1 mm to 5 mm; and / or A radiation absorbing coating is provided on the surface of the first cold plate (20) facing the first aperture array plate (40), and the radiation absorption rate of the radiation absorbing coating is controlled to be above 90%.

6. Electron beam splitting module, characterized in that: A shaped aperture assembly comprising the shaped aperture assembly according to any one of claims 1 to 5.

7. The electron beam splitting module according to claim 6, characterized in that: Two groups of forming aperture components are provided along the irradiation direction of the electron beam (61); the extension directions of the first cold plates (20) of one group of forming aperture components and the other group of forming aperture components are arranged perpendicular to each other, and the extension directions of the first cold plates (20) of the two groups of forming aperture components are both arranged perpendicular to the irradiation direction of the electron beam (61).

8. A multi-electron beam lithography machine, characterized in that: A shaped aperture assembly comprising the shaped aperture assembly according to any one of claims 1 to 5; or Comprising the electron beam splitting module according to claim 6 or 7.

9. The multi-electron beam lithography machine according to claim 8, characterized in that: It also includes a blanking array plate (50) arranged in the emission direction of the electron beam (61) of the shaping aperture component.

10. The multi-electron beam lithography machine according to claim 9, characterized in that: The blanking array plate (50) comprises a base layer (51) and an integrated circuit layer (52) sequentially arranged along the irradiation direction of the electron beam (61); A second through hole (501) is provided at corresponding positions of the base layer (51) and the integrated circuit layer (52); A deflection electrode (53) and a grounding electrode (54) are provided in the second through hole (501).

11. The multi-electron beam lithography machine according to claim 10, characterized in that: The length of the grounding electrode (54) is longer than that of the deflection electrode (53), and the grounding electrode (54) extends to the outside of the second through hole (501) in the emission direction of the electron beam (61).

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