Method for quickly verifying packaging by replacing frame with substrate

Abstract

The invention discloses a method for quickly verifying packaging by replacing a frame with a substrate, which belongs to the technical field of substrate packaging, adopts a reconfigurable substrate design, realizes synchronous verification of two packaging schemes of surface mounting and wire bonding on a single substrate, and breaks through the limitation that a traditional frame needs to be manufactured and verified separately. The substrate is integrated with a micron-sized functional partition and an electromagnetic isolation structure, so that characteristic comparison of two technical routes can be completely reserved in the verification process, and the problem of signal crosstalk is avoided. Through collaborative optimization of a material system and a processing technology, the packaging size is reduced by more than eight percent compared with that of a traditional scheme, a physical carrier support is provided for development of miniaturized devices, meanwhile, mold development and material consumption costs are greatly reduced, original serial technical verification is converted into a parallel mode, the development period is shortened by more than 90 percent, and the development cost is greatly reduced. And the method is especially suitable for rapid iteration requirements of 5G high-frequency devices. The reconfigurable characteristic of the substrate scheme supports a multi-generation product reuse verification platform, and the utilization rate of research and development resources is remarkably improved.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of substrate packaging, and particularly relates to a method for rapidly verifying and packaging a substrate instead of a frame. BACKGROUND

[0002] Substrate packaging verification refers to a series of tests and confirmation activities on packaging materials, process flow and performance of final products in the process of substrate manufacturing and electronic component packaging. It mainly includes packaging design verification, material performance verification, process verification and product reliability verification, etc. Through strict verification process, it is ensured that the packaged substrate has good electrical connection, thermal management performance and mechanical strength, and at the same time meets the long-term stable operation requirements of electronic products under the environmental conditions of temperature, humidity, vibration, etc. Substrate packaging verification is of great significance for improving product quality, reducing failure rate, ensuring electronic product reliability and prolonging service life.

[0003] However, the main defect of the prior art is that the traditional frame verification scheme has the problems of physical structure solidification and single function. The frame material is limited by the machining precision, and cannot integrate multiple packaging verification modes on the same carrier, resulting in the need to manufacture special molds for different technical routes, which not only prolongs the research and development cycle, but also causes repeated investment in materials and equipment. SUMMARY

[0004] The purpose of the application is to solve the problems mentioned above, and to provide a method for rapidly verifying and packaging a substrate instead of a frame.

[0005] The technical scheme adopted by the application is as follows: a method for rapidly verifying and packaging a substrate instead of a frame, the method comprising the following steps:

[0006] S1: Based on the size and electrical characteristics of the target crystal oscillator device, a three-dimensional model of the substrate packaging is constructed using simulation software, and the wiring path and heat distribution are optimized.

[0007] S2: A composite substrate of high thermal conductivity insulating resin and copper foil is used, the dielectric constant of which is less than or equal to 3.5, and the thickness is 1 / 3 of that of the frame material, so as to reduce the packaging size and improve the heat dissipation performance.

[0008] S3: Micron-level grooves and through holes are etched on the surface of the substrate using ultra-short pulse laser, forming switchable SMT patch area and upper patch wire bonding area, realizing physical isolation and signal independent verification of the two packaging schemes.

[0009] S4: A gold / nickel alloy layer is selectively deposited on the laser processing area by sputtering process, to ensure the welding compatibility of the SMT patch and the bonding reliability of the wire bonding area.

[0010] S5: The reflow soldering process is used in the SMT patch area to fix the crystal oscillator, and the gold wire bonding is used in the patch wire bonding area to connect the pins, and the electrical performance test is carried out respectively.

[0011] S6: The packaged substrate is placed in a temperature control cycle device (-40℃-150℃), the frequency offset of the crystal oscillator is monitored, and the thermal stability of the substrate packaging is verified.

[0012] S7: The signal integrity, power consumption and failure mode of the SMT patch and the patch wire bonding scheme are compared synchronously, and a quantitative comparison report is generated.

[0013] S8: After removing the original metal layer, the crystal oscillator model is re-deposited and replaced, and the reuse ability of the same substrate to different packaging schemes is verified.

[0014] S9: The packaged substrate that passes the verification is applied with 3 times the rated current for 48 hours, and the failure rate is counted to confirm that it meets the industrial reliability standards.

[0015] In a preferred embodiment, in step S1, first, a substrate structure model is established by ANSYS simulation software, and the impedance matching and power layer distribution of the signal line are optimized. According to the characteristics of the crystal oscillator working frequency 24GHz, the microstrip line width is designed to be 80μm, and the dielectric layer thickness is controlled to be 100μm, so that the characteristic impedance is stabilized at 50Ω±2%. At the same time, an asymmetric heat sink layout is adopted, and a copper column array is arranged below the crystal chip, so that the thermal resistance is reduced to 1.2℃ / W, and the heat is quickly discharged during high-frequency operation. Through electromagnetic field simulation verification, the insertion loss of the model in the 28GHz frequency band is less than 0.3dB, which meets the demand of millimeter wave communication.

[0016] In a preferred embodiment, in step S2, the core layer is an epoxy resin doped with aluminum nitride powder, and the thermal conductivity coefficient reaches 5W / (m·K), which is 8 times that of traditional FR4 material. The thickness of the copper foil is selected to be 18μm ultra-thin specification, and the fine circuit with a line width of 5μm is formed by chemical etching. The total thickness of the substrate is compressed to 0.3mm, which is 67% thinner than the traditional frame material, and the dielectric constant is stabilized at 3.3±0.1 (1GHz test conditions). In the temperature rise test, the surface temperature rise of the substrate carrying a power of 3W is only 18℃, which is reduced by 40% compared with ordinary materials, effectively avoiding the frequency drift caused by high temperature.

[0017] In a preferred embodiment, in step S3, the detailed implementation steps include:

[0018] S3-1. Dynamic configuration of laser parameters:

[0019] An ultra-short pulse femtosecond laser is used: pulse width ≤ 300 fs, wavelength 1064 nm, according to the thermal conductivity of the substrate material and the thickness of the dielectric layer, the laser power 5-20 W and the scanning speed 100-500 mm / s are adjusted in real time to ensure that the heat affected zone of the processing area is ≤ 2 μm, and carbonization of the material is avoided.

[0020] S3-1. Perform dual-mode function area segmentation:

[0021] Synchronously etch two types of microstructures on the substrate surface:

[0022] SMT patch area: rectangular groove array with a processing depth of 50 μm, groove width set to 80 μm, pitch set to 120 μm, and bottom pre-tinned groove filling;

[0023] Top piece wire bonding area: make a tapered via through the dielectric layer, the entrance diameter is set to 40 μm, the exit diameter is set to 25 μm, and the inner wall forms a 15° inclination angle to optimize the gold wire bonding angle

[0024] S3-1. Set up electromagnetic shielding isolation structure:

[0025] Etch a serpentine isolation groove with a depth of 30 μm at the junction of the two types of areas, fill the groove with ferrite magnetic nanoparticles to form a high-frequency signal isolation band, with an isolation degree ≥ 45 dB @ 10 GHz, and eliminate signal crosstalk during dual-scheme verification;

[0026] Wherein: the ferrite magnetic nanoparticles are composed of 50 to 70 parts by weight of Fe3O4@SiO2core-shell nanoparticles as core functional materials, the particle size is 50 nanometers, the mass fraction of Fe3O4core is more than 85%, and the outer layer is coated with a 3 to 5 nanometer thick SiO2shell to prevent oxidation and agglomeration. The base material uses 100 parts by weight of bisphenol A type epoxy resin with an epoxy value of 0.51 to 0.54 moles per 100 grams and a viscosity of 3500 to 4500 millipascal seconds, together with 20 to 30 parts by weight of polyetheramine D230 curing agent to achieve 80 degrees Celsius low-temperature rapid curing. Auxiliary materials include 1 to 3 parts by weight of KH-550 silane coupling agent to enhance the interfacial bonding force, 5 to 8 parts by weight of α-type nano-alumina with a particle size of 30 to 50 nanometers for dielectric constant gradient control, 15 to 20 parts by weight of high-purity acetone as a diluent to reduce viscosity, and 0.5 to 1 parts by weight of fumed silica as a thixotropic agent to prevent sagging.

[0027] In a preferred embodiment, in step S4, a 200 nm thick nickel barrier layer is deposited on the SMT patch area, and a 1 μιη thick pure gold layer is coated thereon, so that the solder surface roughness is controlled to Ra≤0.15 μιη. The gradient plating layer technology is used for the wire bonding area, from the titanium adhesion layer (50 nm) at the bottom, the nickel diffusion barrier layer (300 nm) to the hard gold layer (800 nm) at the surface, and the bonding tension value is increased to 10 gf, which is 25% higher than that of the conventional process. Through X-ray diffraction analysis, the crystal orientation of the metal layer presents (111) face preferred growth, and the hardness reaches HV180, which meets the reliability requirements in the high frequency vibration environment.

[0028] In a preferred embodiment, in step S5, the step-down reflow soldering process is used for the SMT patch area, the peak temperature is set to 245°C, and the liquid maintenance time is 45 seconds, so that the tin-silver-copper solder is fully wetted. After installation, 3D X-ray detection is used to ensure that the 0.4 mm pitch 0201 packaged capacitor offset is less than 15 μιη. The 25 μιη gold wire is used for two-solder-point bonding in the wire bonding area, the first solder point is applied with 120 gf pressure to form a fish tail-shaped bond, and the second solder point is bonded by the hot ultrasonic process to form a wedge-shaped connection at a frequency of 60 kHz. Through the vector network analyzer test, the insertion loss difference of the two packaging schemes is controlled within ±0.05 dB.

[0029] In a preferred embodiment, in step S6, the temperature is cycled 100 times at a rate of 15°C / min between -55°C and 125°C, while a continuous radio frequency signal of 28 GHz and +16 dBm is applied. Through the embedded thermocouple monitoring, the junction temperature fluctuation range of the crystal oscillator chip is ≤±3°C. The key indicators include the frequency temperature characteristic drift value (±2 ppm) and the phase noise change amount (≤0.5 dBc / Hz@1 kHz offset), and the test data show that the substrate thermal stress release effect is 30% better than that of the traditional frame structure.

[0030] In a preferred embodiment, in step S7, the test data show that the SMT patch scheme has an insertion loss advantage of 0.8 dB below 10 GHz, but the group delay fluctuation of the upper piece wire bonding scheme is reduced by 35% in the millimeter wave frequency band. The power consumption comparison finds that the static current of the wire bonding scheme is 12 mA lower, but the transient response speed is 15 ns slower than that of the SMT. Through the failure mode analysis, the SMT solder joint appears micro-cracks after 3000 times of temperature cycling, while the wire bonding point shows better fatigue resistance in the mechanical vibration test.

[0031] In a preferred embodiment, in the step S8, the SMT patch area groove depth is adjusted from 50 to 70 by laser secondary processing to adapt to a larger size BAW filter. The introduction of palladium nickel alloy when re-depositing the metal layer improves the oxidation resistance of the soldering surface by 3 times. After installing the new device, the test shows that the return loss of the 38GHz frequency band is improved by 4dB, verifying the reconfigurable advantage of the substrate scheme. The process takes only 6 hours, saving 92% of the time cost compared to the traditional framework of re-opening the mold.

[0032] In a preferred embodiment, in the step S9, the limit working condition is applied to the verified substrate: the environmental temperature is increased to 150℃, the working voltage is increased to 3.6V (the nominal value is 3.3V), and the radio frequency power is increased to +20dBm. After 48 hours of continuous testing, the key failure indicators are counted: the frequency offset is ≤±5ppm, the phase noise deterioration is ≤1dB, and the solder joint tensile strength retention rate is ≥95%. Through Weibull distribution analysis, the MTTF (mean time to failure) of the substrate packaging scheme reaches 1.2x10^6 hours, exceeding the 5x10^5 hour standard required by industrial-grade devices.

[0033] In summary, due to the adoption of the above technical solutions, the beneficial effects of the present application are:

[0034] 1、In the present application, the reconfigurable substrate design is adopted to realize the synchronous verification of surface mount and wire bonding packaging schemes on a single substrate, breaking through the limitation of the traditional framework that requires separate production verification. The substrate integrates micron-level functional partitions and electromagnetic isolation structures, so that the verification process can not only preserve the characteristic comparison of the two technical routes, but also avoid signal crosstalk problems. The synergistic optimization of the material system and the processing technology makes the packaging size reduced by more than 80% compared to the traditional scheme, providing physical carrier support for miniaturized device development, while significantly reducing mold development and material consumption costs.

[0035] 2、In the present application, the originally serial technical verification is changed to a parallel mode, and the development cycle is shortened by more than 90%, which is especially suitable for the rapid iteration needs of 5G high-frequency devices. The reconfigurable characteristics of the substrate scheme support multiple product reuse verification platforms, significantly improving the utilization rate of research and development resources. Through dynamic thermal stress management and gradient dielectric regulation technology, the verification results have industrial-level reliability, which builds an efficient transformation bridge from the laboratory to mass production for new packaging technologies. BRIEF DESCRIPTION OF DRAWINGS

[0036] Figure 1 The flow principle diagram of the present application. DETAILED DESCRIPTION

[0037] In order to make the purpose, technical scheme and advantages of the present application more clear, the present application is further described in detail below in combination with the drawings and examples. It should be understood that the specific examples described herein are only used to explain the present application and do not limit the present application.

[0038] Embodiments:

[0039] Referring to Figure 1 ,

[0040] A method for quickly verifying a substrate replacement frame package, the method comprising the following steps:

[0041] S1: Based on the size and electrical characteristics of the target crystal oscillator device, a three-dimensional model of the substrate package is constructed using simulation software, and the wiring path and heat distribution are optimized.

[0042] S2: A composite substrate is used, which is laminated with high thermal conductivity insulation resin and copper foil, and the dielectric constant is ≤3.5, and the thickness is 1 / 3 of the frame material, so as to reduce the package size and improve the heat dissipation performance.

[0043] S3: Using ultra-short pulse laser to etch micron-level grooves and vias on the surface of the substrate, forming switchable SMT patch area and upper patch wire bonding area, realizing physical isolation and signal independent verification of the two packaging schemes.

[0044] S4: A gold / nickel alloy layer is selectively deposited on the laser processed area by sputtering process, to ensure the solder compatibility of the SMT patch and the bonding reliability of the wire bonding area.

[0045] S5: The reflow soldering process is used in the SMT patch area to fix the crystal oscillator, and the gold wire bonding is used in the upper patch wire bonding area to connect the pins, and the electrical performance test is carried out respectively.

[0046] S6: The packaged substrate is placed in a temperature control circulating device (-40℃~150℃), the frequency offset of the crystal oscillator is monitored, and the thermal stability of the substrate package is verified.

[0047] S7: The signal integrity, power consumption and failure mode of the SMT patch and the upper patch wire bonding scheme are compared synchronously, and a quantitative comparison report is generated.

[0048] S8: After removing the original metal layer, the crystal oscillator model is replaced by re-deposition, and the reuse ability of the same substrate for different packaging schemes is verified.

[0049] S9: Apply 3 times rated current to the verified packaging substrate for 48 hours, count the failure rate to confirm that it meets the industrial reliability standards. Impedance matching and power layer distribution. According to the characteristics of the crystal oscillator operating frequency 24GHz, the microstrip line width is designed to be 80μm, and the dielectric layer thickness is controlled to be 100μm, so that the characteristic impedance is stabilized at 50Ω±2%. At the same time, an asymmetric heat sink layout is adopted, and a copper column array is arranged below the crystal oscillator chip, so that the thermal resistance is reduced to 1.2℃ / W, ensuring that the heat is quickly exported during high-frequency operation. Through electromagnetic field simulation verification, the insertion loss of the model in the 28GHz frequency band is less than 0.3dB, meeting the demand of millimeter wave communication.

[0050] In step S2, the core layer is an epoxy resin doped with aluminum nitride powder, with a thermal conductivity of 5W / (m·K), which is 8 times that of traditional FR4 materials. The thickness of the copper foil is selected to be 18μm ultra-thin specification, and a fine circuit with a line width of 5μm is formed by chemical etching. The total thickness of the substrate is compressed to 0.3mm, which is 67% thinner than the traditional frame material, and the dielectric constant is stabilized at 3.3±0.1(1GHz test conditions). In the temperature rise test, the surface temperature rise of the substrate carrying a 3W power is only 18℃, which is 40% lower than ordinary materials, effectively avoiding the frequency drift caused by high temperature.

[0051] In step S3, the detailed implementation steps include:

[0052] S3-1. Dynamic configuration of laser parameters:

[0053] An ultra-short pulse femtosecond laser is used: pulse width ≤300fs, wavelength 1064nm, according to the thermal conductivity of the substrate material and the thickness of the dielectric layer, the laser power 5—20W and the scanning speed 100—500mm / s are adjusted in real time to ensure that the heat affected zone of the processing area is ≤2μm, avoiding material carbonization.

[0054] S3-1. Perform dual-mode functional area segmentation:

[0055] Etch two types of microstructures on the surface of the substrate simultaneously:

[0056] SMT patch area: process a rectangular groove array with a depth of 50μm, the groove width is set to 80μm, the pitch is set to 120μm, and the bottom is pre-filled with tin paste filling groove;

[0057] Chip wire bonding area: make a tapered via through the dielectric layer, the inlet diameter is set to 40μm, the outlet diameter is set to 25μm, and the inner wall forms a 15°inclination angle to optimize the gold wire bonding angle

[0058] S3-1. Set electromagnetic shielding isolation structure:

[0059] At the junction of the two types of regions, a serpentine isolation groove with a depth of 30μm is etched, the groove is filled with ferrite magnetic nanoparticles to form a high-frequency signal isolation band, the isolation degree is ≥45dB@10GHz, and the signal crosstalk during double scheme verification is eliminated;

[0060] The ferrite magnetic nanoparticles are composed of 50 to 70 parts by weight of Fe3O4@SiO2core-shell nanoparticles as core functional materials, the particle size is 50 nanometers, the mass fraction of Fe3O4core is more than 85%, and the outer layer is coated with a 3 to 5 nanometer thick SiO2shell to prevent oxidation and agglomeration. The base material uses 100 parts by weight of bisphenol A type epoxy resin with an epoxy value of 0.51 to 0.54 moles per 100 grams and a viscosity of 3500 to 4500 millipascal seconds, and is combined with 20 to 30 parts by weight of polyetheramine D230 curing agent to achieve low-temperature rapid curing at 80 degrees Celsius. The auxiliary materials include 1 to 3 parts by weight of KH-550 silane coupling agent to enhance the interfacial bonding force, 5 to 8 parts by weight of α-type nano-aluminum oxide with a particle size of 30 to 50 nanometers for dielectric constant gradient control, 15 to 20 parts by weight of high-purity acetone as a diluent to reduce viscosity, and 0.5 to 1 parts by weight of fumed silica as a thixotropic agent to prevent sagging

[0061] In the step S4, for the SMT patch area, a 200nm thick nickel barrier layer is deposited first, and then a 1μm thick pure gold layer is covered, so that the solder surface roughness is controlled to Ra≤0.15μm. The wire bonding area uses gradient plating technology, from the titanium adhesion layer (50nm) at the bottom, the nickel diffusion barrier layer (300nm) to the hard gold layer (800nm) at the surface, the bonding tension value is increased to 10gf, which is 25% higher than the traditional process. Through X-ray diffraction analysis, the crystal orientation of the metal layer presents (111) face preferred growth, and the hardness reaches HV180, meeting the reliability requirements in high-frequency vibration environment.

[0062] In the step S5, the SMT patch area uses a stepped reflow soldering process, the peak temperature is set to 245℃, and the liquid maintenance time is 45 seconds, so that the tin-silver-copper solder is fully wetted. After installation, 3D X-ray detection is used to ensure that the 0201 packaged capacitor with a spacing of 0.4mm has a deviation of less than 15μm. The wire bonding area uses 25μm gold wire for two-solder-point bonding, the first solder point applies a pressure of 120gf to form a fish tail-shaped bond, and the second solder point uses a hot ultrasonic process to form a wedge-shaped connection at a frequency of 60kHz. Through vector network analyzer testing, the insertion loss difference of the two packaging schemes is controlled within ±0.05dB.

[0063] In the step S6, the temperature is cycled 100 times at a rate of 15℃ / min between -55℃ and 125℃, while a continuous RF signal of 28GHz, +16dBm is applied. The crystal oscillator chip junction temperature fluctuation range is monitored by embedded thermocouples, ≤±3℃. Key indicators include frequency temperature characteristic drift value (±2ppm) and phase noise change amount (≤0.5dBc / Hz@1kHz offset), and test data show that the substrate thermal stress release effect is 30% better than the traditional frame structure.

[0064] In the step S7, the measured data show that the SMT patch scheme has an insertion loss advantage of 0.8dB below 10GHz, but the upper piece wire bonding scheme reduces the group delay fluctuation by 35% in the millimeter wave frequency band. The power consumption comparison finds that the wire bonding scheme has a static current that is 12mA lower, but the transient response speed is 15ns slower than SMT. Through failure mode analysis, SMT solder joints appear micro-cracks after 3000 temperature cycles, while wire bonding points show better fatigue resistance characteristics in mechanical vibration tests.

[0065] In the step S8, the SMT patch area groove depth is adjusted from 50μm to 70μm by laser secondary processing to adapt to larger size BAW filters. When the metal layer is re-deposited, palladium-nickel alloy is introduced to improve the oxidation resistance of the soldered surface by 3 times. After installing the new device, the test shows that the return loss of the 38GHz frequency band is improved by 4dB, verifying the reconfigurable advantage of the substrate scheme. This process takes only 6 hours, saving 92% of the time cost compared to the traditional frame re-tooling.

[0066] In the step S9, the verified substrate is subjected to extreme working conditions: the environmental temperature is raised to 150℃, the working voltage is raised to 3.6V (the nominal value is 3.3V), and the RF power is increased to +20dBm. After 48 hours of continuous testing, the key failure indicators are counted: the frequency offset is ≤±5ppm, the phase noise deterioration is ≤1dB, and the solder joint tensile strength retention rate is ≥95%. Through Weibull distribution analysis, the MTTF (Mean Time To Failure) of the substrate packaging scheme reaches 1.2×10^6 hours, exceeding the 5×10^5 hour standard required by industrial grade devices.

[0067] From the above, it can be seen that:

[0068] In the present application, a reconfigurable substrate design is adopted to simultaneously verify the surface mount and wire bonding packaging schemes on a single substrate, breaking through the limitation of traditional frames that need to be made and verified separately. The substrate integrates micron-level functional partitions and electromagnetic isolation structures, so that the verification process can not only completely retain the characteristic comparison of the two technical routes, but also avoid signal crosstalk problems. The synergistic optimization of the material system and the processing technology makes the packaging size more than 80% smaller than the traditional scheme, providing physical carrier support for the development of miniaturized devices, while greatly reducing the mold development and material consumption cost.

[0069] In the present application, the originally serial technology verification is changed to a parallel mode, the development cycle is shortened by more than 90%, and it is especially suitable for the rapid iteration demand of 5G high-frequency devices. The reconfigurable characteristics of the substrate scheme support multiple product reuse verification platforms, significantly improving the utilization rate of research and development resources. Through dynamic thermal stress management and gradient dielectric regulation technology, it ensures that the verification results have industrial-level reliability, and builds an efficient transformation bridge for new packaging technology from the laboratory to mass production.

[0070] It should be noted that, in this document, the terms such as first and second are used only to distinguish one entity or operation from another, and do not necessarily require or imply any actual such relationship or order between the entities or operations. Moreover, the term "comprising" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or inherent to such a process, method, article or device. Without more limitations, the element defined by the statement "comprising a" does not exclude the presence of other identical elements in the process, method, article or device including the element.

[0071] The above description enables those skilled in the art to implement or use the present application. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to these embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method for quickly verifying a package by using a substrate instead of a frame, characterized in that: The method comprises the following steps: S1: Based on the size and electrical characteristics of the target crystal oscillator device, use simulation software to build a three-dimensional model of the substrate package and optimize the wiring path and heat distribution; S2: A composite substrate made of high thermal conductivity insulating resin and copper foil laminated with a dielectric constant of ≤3.5 and a thickness of 1 / 3 of the frame material is used to reduce the package size and improve heat dissipation performance; S3: Use ultrashort pulse lasers to etch micron-scale grooves and through-holes on the substrate surface, forming switchable SMT patch areas and wafer bonding areas, achieving physical isolation and independent signal verification of the two packaging solutions; S4: A gold / nickel alloy layer is selectively deposited on the laser processing area through a sputtering process to ensure the soldering compatibility of the SMT patch and the bonding reliability of the wire bonding area; S5: Fix the crystal oscillator using the reflow soldering process in the SMT patch area, connect the pins by gold wire bonding in the upper chip bonding area, and perform electrical performance tests respectively; S6: placing the packaged substrate in a temperature control circulation device to monitor the frequency offset of the crystal oscillator and verify the thermal stability of the substrate package; S7: Synchronously compare the signal integrity, power consumption and failure modes of the SMT patch and on-chip bonding solutions, and generate a quantitative comparison report; S8: After removing the original metal layer, re-deposit and replace the crystal oscillator model to verify the reuse capability of the same substrate for different packaging solutions; S9: Apply three times the rated current to the verified package substrate for 48 hours, and calculate the failure rate to confirm that it meets industrial-grade reliability standards.

2. A method for rapid package verification using a substrate instead of a frame as claimed in claim 1, characterized in that: In step S1, a substrate structure model is first established using ANSYS simulation software, with a focus on optimizing the impedance matching of the signal lines and the distribution of the power layer. Based on the characteristics of the crystal oscillator's operating frequency of 24 GHz, the microstrip line width is designed to be 80 μm, and the dielectric layer thickness is controlled at 100 μm, so that the characteristic impedance is stabilized at 50 Ω ± 2%. At the same time, an asymmetric heat sink layout is adopted, and a copper pillar array is provided below the crystal oscillator chip to reduce the thermal resistance to 1.2°C / W, ensuring rapid heat dissipation during high-frequency operation.

3. The method for rapid package verification using a substrate instead of a frame according to claim 1, wherein: In step S2, the core layer is epoxy resin doped with aluminum nitride powder, with a thermal conductivity of 5W / (m·K). A fine circuit with a line width of 5μm is formed by chemical etching; the total thickness of the substrate is compressed to 0.3mm, which is 67% thinner than traditional frame materials.

4. The method for rapid package verification using a substrate instead of a frame according to claim 1, wherein: In step S3, the detailed implementation steps include: S3-1. Dynamic configuration of laser parameters: Ultrashort pulse femtosecond laser is used: pulse width ≤ 300fs, wavelength 1064nm. According to the thermal conductivity of the substrate material and the thickness of the dielectric layer, the laser power is adjusted in real time from 5 to 20W and the scanning speed is adjusted from 100 to 500mm / s to ensure that the heat-affected zone in the processing area is ≤ 2μm to avoid material carbonization. S3-1. Perform dual-mode functional area segmentation: Two types of microstructures are simultaneously etched on the substrate surface: SMT patch area: Processing depth of 50μm rectangular groove array, groove width set to 80μm, spacing set to 120μm, the bottom preset solder paste filling groove; On-chip bonding area: a tapered through-hole is made through the dielectric layer, with an entrance diameter of 40 μm, an exit diameter of 25 μm, and a 15° tilt angle on the inner wall to optimize the gold wire bonding angle. S3-1. Set up electromagnetic shielding isolation structure: A 30μm-deep serpentine isolation groove is etched at the junction of the two types of areas. The groove is filled with ferrite magnetic nanoparticles to form a high-frequency signal isolation zone with an isolation degree of ≥45dB@10GHz, eliminating signal crosstalk during dual-solution verification. The ferrite magnetic nanoparticles are composed of 50 to 70 parts by weight of Fe3O4@SiO core-shell nanoparticles as the core functional material. The particle size is 50 nanometers, the Fe3O4 core accounts for more than 85% of the mass, and the outer layer is coated with a 3 to 5 nanometer thick SiO2 shell to prevent oxidation agglomeration. The matrix material uses 100 parts by weight of bisphenol A epoxy resin with an epoxy value of 0.51 to 0.54 mol per 100 grams and a viscosity of 3500 to 4500 milliPas. It is combined with 20 to 30 parts by weight of polyetheramine D230 curing agent to achieve low-temperature rapid curing at 80 degrees Celsius. The auxiliary materials include 1 to 3 parts by weight of KH-550 silane coupling agent, 5 to 8 parts by weight of α-type nano-alumina with a particle size of 30 to 50 nanometers for dielectric constant gradient control, 15 to 20 parts by weight of high-purity acetone as a diluent to reduce viscosity, and 0.5 to 1 part by weight of fumed silica as a thixotropic agent.

5. The method for rapid package verification using a substrate instead of a frame according to claim 1, wherein: In step S4, for the SMT patch area, a 200 nm thick nickel barrier layer is first deposited, and then covered with a 1 μm thick pure gold layer, so that the welding surface roughness is controlled to Ra≤0.15 μm.

6. The method for rapid package verification using a substrate instead of a frame according to claim 1, wherein: In step S5, a stepped reflow process is used in the SMT patch area, with the peak temperature set to 245° C. and the liquid state maintained for 45 seconds to ensure sufficient wetting of the tin-silver-copper solder; after installation, 3D X-ray inspection is used to ensure that the offset of the 0201 package capacitor with a 0.4 mm pitch is less than 15 μm.

7. The method for rapid package verification using a substrate instead of a frame according to claim 1, wherein: In step S6, the temperature is cycled 100 times between -55°C and 125°C at a rate of 15°C / minute, while applying a continuous RF signal of 28 GHz and +16 dBm; and the crystal oscillator chip junction temperature fluctuation range is ≤±3°C as monitored by the embedded thermocouple.

8. The method for rapid package verification using a substrate instead of a frame according to claim 1, wherein: In step S7, measured data shows that the SMT patch solution has an insertion loss advantage of 0.8 dB in the frequency band below 10 GHz.

9. The method for rapid package verification using a substrate instead of a frame according to claim 1, wherein: In step S8, the groove depth of the SMT patch area is adjusted from 50 μm to 70 μm by laser secondary processing to adapt to a larger-sized BAW filter.

10. The method for rapid package verification using a substrate instead of a frame according to claim 1, wherein: In step S9, extreme operating conditions are applied to the verified substrates: the ambient temperature is increased to 150° C., the operating voltage is increased to 3.6V, and the RF power is increased to +20 dBm; after continuous testing for 48 hours, key failure indicators are counted.

Images