Instrument for communication system and semiconductor integrated circuit device

A technology for communication systems and integrated circuits, which is used in semiconductor devices, amplifiers with semiconductor devices/discharge tubes, semiconductor/solid-state device manufacturing, etc., and can solve problems such as high operating costs, difficult impedance matching, and poor heat resistance.

CN1354568AInactive Publication Date: 2002-06-19PANASONIC CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Publication Date
2002-06-19
Estimated Expiration
Not applicable · inactive patent

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Abstract

Equipment for a communication system has a semiconductor device formed by integrating a Schottky diode, a MOSFET, a capacitor, and an inductor in a SiC substrate. The SiC substrate has a first multilayer portion and a second multilayer portion provided upwardly in this order. The first multilayer portion is composed of delta-doped layers each containing an n-type impurity(nitrogen)at a high concentration and undoped layers which are alternately stacked. The second multilayer portion is composed of delta-doped layers each containing a p-type impurity(aluminum)at a high concentration and undoped layers which are alternately stacked. Carriers in the delta-doped layers spread out extensively to the undoped layers. Because of a low impurity concentration in each of the undoped layers, scattering by impurity ions is reduced so that a low resistance and a high breakdown voltage are obtained. Said equipment is suitable for arrangement under severe conditions of use temperature and space constrains or the like.
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Description

technical field

[0001] The present invention relates to a semiconductor integrated circuit device equipped with a semiconductor power supply device for high withstand voltage and high current, and equipment for communication systems such as portable terminals and base stations using the semiconductor integrated circuit device. Background technique

[0002] Since silicon carbide (SiC) is a semiconductor with a larger band spacing than silicon (Si), it has high insulation withstand voltage and is also a stable semiconductor at high temperatures, so active elements formed with SiC substrates are expected to Applied to next-generation power supply devices and high-temperature working devices.

[0003] In general, a power supply device is a general term for devices that perform high-power conversion and control, and are called power diodes, power transistors, and the like. Moreover, as the application of the power supply device, there are, for example, transistors and diodes arr...

Examples

Embodiment Construction

[0054] Hereinafter, embodiments of the present invention will be briefly described with reference to the drawings.

[0055] figure 1 The structure of the communication system in the embodiment of the present invention is briefly shown. As shown in the figure, the communication system of this embodiment includes a plurality of base stations 101 connected to each other through a switching network 100 (network), and mobile phone terminals 102 for communicating with each other through each base station 101 . Each base station 101 includes the following parts: an antenna device 111 for transmitting and receiving radio waves, a reception amplifier 112 having a function of amplifying the radio wave signal received by the antenna device 111, and a radio frequency signal for transmitting amplified radio waves to the antenna device 111. The signal transmitting amplifier 113, the wireless transceiver 114 connected together with the receiving amplifier 112 and the transmitting amplifier...