Instrument for communication system and semiconductor integrated circuit device

Abstract

Equipment for a communication system has a semiconductor device formed by integrating a Schottky diode, a MOSFET, a capacitor, and an inductor in a SiC substrate. The SiC substrate has a first multilayer portion and a second multilayer portion provided upwardly in this order. The first multilayer portion is composed of delta-doped layers each containing an n-type impurity(nitrogen)at a high concentration and undoped layers which are alternately stacked. The second multilayer portion is composed of delta-doped layers each containing a p-type impurity(aluminum)at a high concentration and undoped layers which are alternately stacked. Carriers in the delta-doped layers spread out extensively to the undoped layers. Because of a low impurity concentration in each of the undoped layers, scattering by impurity ions is reduced so that a low resistance and a high breakdown voltage are obtained. Said equipment is suitable for arrangement under severe conditions of use temperature and space constrains or the like.

Description

technical field [0001] The present invention relates to a semiconductor integrated circuit device equipped with a semiconductor power supply device for high withstand voltage and high current, and equipment for communication systems such as portable terminals and base stations using the semiconductor integrated circuit device. Background technique [0002] Since silicon carbide (SiC) is a semiconductor with a larger band spacing than silicon (Si), it has high insulation withstand voltage and is also a stable semiconductor at high temperatures, so active elements formed with SiC substrates are expected to Applied to next-generation power supply devices and high-temperature working devices. [0003] In general, a power supply device is a general term for devices that perform high-power conversion and control, and are called power diodes, power transistors, and the like. Moreover, as the application of the power supply device, there are, for example, transistors and diodes arr...

AI Technical Summary

Problems solved by technology

GaAs has poor heat resistance, so in order to suppress the temperature rise, a cooling device with a strong cooling capacity is required, and a large operating cost is required to maintain the base station

Also, when applied to portable terminals, although it is necessary to miniaturize the circuit, components with poor heat resistance such as GaAsMESFETs are strictly restricted in position, that is, it must be far away from FETs that tend to rise to high temperatures due to high-frequency signals and inductance

Although various efforts have been made in the positional relationship of each component, the result is that the transmission and reception circuit itself can only be enlarged.

[0010] In addition, the most important part of the transceiver circuit, which is the signal amplification element, especially in the part required to amplify large power, although many MESFETs are provided, but with the increase of the frequency of the high-frequency signal, the reflection from the MESFET The influence caused by the wave is superimposed, so it is difficult to achieve impedance matching

As a result, it takes a lot of time to adjust for impedance matching

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