Electrostatic chuck with adjustable electrostatic area

Abstract

The utility model discloses an electrostatic chuck with an adjustable electrostatic area, which adopts an aluminum casing as a main body and is internally provided with a J-R force generating component. An adjusting mechanism is arranged at the top of the machine shell and comprises at least three linear degrees of freedom which are arranged in a coaxial annular array mode. The linear degrees of freedom are arranged in a staggered manner on the horizontal plane, and when the linear degrees of freedom are executed, one electrostatic block is driven to move horizontally; according to the utility model, by introducing the adjusting mechanism and the linear module, the novel technology realizes the horizontal movement of the static block, so that the position of the static area is adjustable. Therefore, the system is more flexible and can adapt to adsorbed objects with different sizes and shapes. According to the utility model, the linear module design is adopted, and the combination of the rotary actuator and the linear actuator is included, so that the system has a fine adjustment function. In this way, the position of the adsorbed object can be accurately and finely adjusted in the technological process, and the precision and controllability of the adsorption system are improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor preparation, in particular to an electrostatic chuck with an adjustable electrostatic area. Background Art

[0002] In the field of semiconductor preparation, mechanical clamping technology was used to fix wafers in the early days. This method caused minor scratches or deformations on the surface because mechanical clamping had high requirements on the surface of the wafer. Later, paraffin bonding was used to achieve fixation by applying paraffin between the wafer and the supporting substrate. However, this method has problems with adhesive residue and temperature sensitivity. Then vacuum chuck technology was developed, which uses vacuum-generated suction to adsorb wafers. This method solves some of the aforementioned problems, but in some cases, it may not provide sufficient flatness.

[0003] The current mainstream solution is the electrostatic chuck. It uses the principle of static electricity to generate electric charges on the adsorption surface to form an electrostatic field, thereby generating a strong adsorption force. The electrostatic chuck does not require direct contact with the adsorbed object, thus reducing the risk of surface damage and providing better flatness control.

[0004] Electrostatic chuck, also known as electrostatic chuck (ESC, E-Chuck), is a high-tech fixture that uses the principle of electrostatic adsorption to firmly fix the adsorbed object. Its structure is shown in the attached figure of the manual. Figure 8 As shown in Figure 1, this fixture is widely used in vacuum and plasma environments, especially in the field of semiconductor production and preparation. Its main function is to adsorb ultra-clean thin sheets, such as wafers, while maintaining the flatness of the adsorbed material, suppressing deformation during the process, and being able to adjust the temperature of the adsorbed material.

[0005] Electrostatic chucks can effectively reduce damage to the surface of the adsorbed object. Electrostatic chucks can also provide better flatness control to ensure that the shape of the object is maintained during the process. Most importantly, they can provide higher handling and positioning accuracy, meeting the precision requirements of semiconductor production. Electrostatic chucks are widely used in the semiconductor industry, providing efficient, precise and protective solutions for the processing of thin materials such as wafers during production and preparation. However, traditional electrostatic chucks have certain technical problems and room for improvement in the following directions:

[0006] (1) Limited by the fixedness of the electrostatic zone: In traditional electrostatic chuck technology, the position of the electrostatic zone is fixed and cannot be flexibly adjusted. This results in limited ability to adapt to different shapes, sizes and process requirements. This may lead to reduced applicability in complex processes or special applications.

[0007] (2) Lack of fine-tuning function: Traditional suction cup technology lacks the ability to fine-tune the electrostatic area. During the process, small adjustments to the position of the adsorbed object may be critical, and traditional technology cannot provide sufficient flexibility.

[0008] Therefore, an electrostatic chuck with adjustable electrostatic area is proposed. Utility Model Content

[0009] In view of this, the embodiment of the utility model hopes to provide an electrostatic chuck with an adjustable electrostatic area to solve or alleviate the technical problems existing in the prior art, namely, the position of the electrostatic area cannot be adjusted and lacks fine-tuning function, and at least provide a beneficial option for this;

[0010] The technical solution of the embodiment of the utility model is implemented as follows: an electrostatic chuck with an adjustable electrostatic area, which adopts an aluminum casing as the main body and has a built-in JR force generating component. An adjusting mechanism is provided on the top of the casing, and the adjusting mechanism includes at least three linear degrees of freedom arranged along a coaxial annular array. Each linear degree of freedom is arranged in a staggered manner on the horizontal plane, and when the linear degree of freedom is executed, an electrostatic block is driven to move horizontally. A plurality of flange areas are provided on the electrostatic block for generating a helium-filled layer and for adsorbing the wafer at the top of the flange area. The arrangement and movement mechanism of the linear degrees of freedom of the adjusting mechanism adjusts the relative position of the electrostatic block and the wafer by horizontally moving the electrostatic block. The JR force generating component generates a micro-electric field when executed, and these micro-electric fields gather in the flange area and form a strong electric field. The strong electric field generates a JR adsorption force on the wafer to achieve adjustable electrostatic adsorption. The design of the flange area helps to form a uniform adsorption force at the top, ensuring that the wafer remains balanced and stable during the adsorption process.

[0011] In one embodiment, the JR force generating assembly includes a bias power supply, a first dielectric block, an electrode sheet, and another first dielectric block arranged at the bottom of the aluminum housing from top to bottom. An adjustment mechanism is arranged at the upper end of the first dielectric block in the aluminum housing, and a helium passage a for helium flow is also provided in the aluminum housing.

[0012] In one embodiment, a helium passage b for helium circulation is provided in the aluminum housing, the helium passage b is connected to the aforementioned helium passage a, and the helium passage b is in contact with all the first dielectric blocks, the electrode sheet and the second dielectric block of the regulating mechanism.

[0013] In one embodiment, the electrostatic block, the second dielectric block and the first dielectric block are not ideal insulating media, that is, the dielectric layer has limited resistance. The contact surface of the electrostatic block is a flange area, which forms many tiny cavities. By pressurizing the electrode sheet, the movable particles in the dielectric are acted upon by the electrode, and the negatively charged particles migrate and gather on the upper surface of the first dielectric block, while the positively charged particles gather on the lower surface of the first dielectric block. The smaller the bulk resistance of the dielectric layer and the longer the duration of the applied voltage, the faster the migration speed of the internal charged particles. This results in the generation of several micro-electric fields, which are transmitted to the electrostatic block through the second dielectric block. A micro-electric field is formed in the non-contact small voids on the contact surface of the electrostatic block, and these countless micro-electric fields constitute the JR adsorption force.

[0014] In one embodiment, the aluminum housing cooperates with the inner wall of the electrode sheet to form a wiring passage for wiring, and the wiring passage is used to guide the wires of the electrode sheet and the bias power supply unit.

[0015] In one embodiment, the adjustment mechanism includes a second dielectric block, which is fixed to the first dielectric block, and a linear slide groove for horizontal movement of the electrostatic block is provided on the second dielectric block.

[0016] In one embodiment, the linear module uses a combination of a rotary actuator and a linear actuator. The motion of the rotary actuator is transmitted to the linear actuator, which is connected to the electrostatic block. When the rotary actuator performs a rotational motion, the linear actuator generates linear motion through a mechanical transmission system, thereby driving the electrostatic block to move horizontally. This design combines rotation and linear motion to provide precise control of the position of the electrostatic block.

[0017] In the above embodiment: the above driving mode is not limited to this; as a preferred technical solution, it can also be preferably selected as follows: the linear actuator is a micro servo motor, the linear actuator is a screw, and the threaded surface of the screw is threadedly connected to the inner wall of the electrostatic block. The double-end shaft head of the screw is rotatably matched in the second dielectric block through a bearing, and the micro servo motor is fixed in the second dielectric block. When the micro servo motor executes the screw to rotate, the screw drives the electrostatic block to move horizontally.

[0018] In one embodiment, a spiral coolant pipe is provided in the aluminum casing.

[0019] Compared with the prior art, the beneficial effects of the utility model are:

[0020] (1) Adjustable position of the electrostatic zone: By introducing an adjustment mechanism and a linear module, the utility model realizes the horizontal movement of the electrostatic block and makes the position of the electrostatic zone adjustable. This provides the system with greater flexibility and can adapt to adsorbed objects of different sizes and shapes.

[0021] (2) Implementation of fine-tuning function: The utility model adopts the design of linear modules, including the combination of rotary actuators and linear actuators, so that the system has fine-tuning function. This enables the position of the adsorbed object to be precisely fine-tuned during the process, improving the accuracy and controllability of the adsorption system.

[0022] (3) Adjustment of multiple degrees of freedom: The adjustment mechanism of the utility model includes at least three linear degrees of freedom arranged in a coaxial annular array, and the direction of each linear degree of freedom is staggered on the horizontal plane. This design increases the freedom of system adjustment, making it more adaptable and intelligent.

[0023] (4) JR force adsorption principle: The utility model introduces a JR force generation component, which forms a strong electric field through a micro-electric field to generate a JR adsorption force on the wafer. This principle helps to improve the stability and controllability of the adsorption force and ensure the stability of the adsorbed object during the process. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or technical descriptions will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0025] Figure 1 It is a three-dimensional schematic diagram from one perspective of the utility model;

[0026] Figure 2 It is a three-dimensional schematic diagram from another perspective of the utility model;

[0027] Figure 3 It is a three-dimensional schematic diagram of the aluminum casing and helium passage a of the utility model;

[0028] Figure 4 It is a three-dimensional schematic diagram of the bias power supply unit and the electrode sheet of the utility model;

[0029] Figure 5 It is a three-dimensional schematic diagram of the adjustment mechanism of the utility model;

[0030] Figure 6 It is a three-dimensional schematic diagram of the bias power supply unit, the first dielectric block and the electrode sheet of the utility model;

[0031] Figure 7 It is a cross-sectional schematic diagram of the utility model;

[0032] Figure 8 It is a schematic diagram of the structure of a traditional electrostatic chuck;

[0033] Reference numerals: 1, aluminum housing; 2, coolant pipe; 3, helium passage a; 4, bias power supply unit; 401, wiring passage; 5, first dielectric block; 501, helium passage b; 6, electrode sheet; 7, adjustment mechanism; 701, second dielectric block; 702, linear actuator; 703, rotary actuator; 704, electrostatic block; DETAILED DESCRIPTION

[0034] In order to make the above-mentioned purposes, features and advantages of the utility model more obvious and easy to understand, the specific implementation methods of the utility model are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the utility model. However, the utility model can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the utility model. Therefore, the utility model is not limited to the specific embodiments disclosed below;

[0035] It should be pointed out that terms in the "degree of freedom" category all refer to the connection relationship and the relationship of applying force to at least one component. For example, "linear degree of freedom" means that a component is connected to one or more other components through this linear degree of freedom and applies force to them, so that they can slide or apply force in a straight line direction; "rotational degree of freedom" means that a component can rotate freely around at least one axis of rotation and can apply or withstand torque.

[0036] Example

[0037] In the existing technology, the traditional electrostatic chuck technology has two main disadvantages. First, the position of its electrostatic area is fixed and cannot be flexibly adjusted, which limits the system's ability to adapt to various adsorbed objects in different processes and applications. Second, the traditional technology lacks the function of fine-tuning the electrostatic area, which makes it difficult to accurately fine-tune the position of the adsorbed object during the process, limiting the flexibility and applicability of the system; for this reason, please refer to Figure 1-7 , this specific implementation will provide relevant technical solutions to solve the above technical problems:

[0038] An electrostatic chuck with an adjustable electrostatic area comprises an aluminum casing 1 and a JR force generating assembly installed therein, wherein an adjusting mechanism 7 is arranged at the top of the aluminum casing 1; the adjusting mechanism 7 comprises at least three linear degrees of freedom arranged in a coaxial annular array, wherein the direction of each linear degree of freedom is staggered on a horizontal plane, and when the linear degrees of freedom are executed, an electrostatic block 704 is driven to move horizontally; a plurality of flange areas for generating a helium-filled layer are provided on the electrostatic block 704, and the top of the flange area is used to adsorb a wafer; when the JR force generating assembly is executed, a plurality of micro-electric fields are generated for the electrostatic block 704, and the micro-electric fields gather in the flange area to form a strong electric field, and the strong electric field forms a JR adsorption force on the wafer.

[0039] In this solution: the arrangement and movement mechanism of the linear degrees of freedom of the adjustment mechanism adjusts the relative position of the electrostatic block and the wafer by horizontally moving the electrostatic block 704. The JR force generation component generates micro-electric fields when executed, and these micro-electric fields gather in the flange area and form a strong electric field. The strong electric field generates a JR adsorption force on the wafer, achieving adjustable electrostatic adsorption. The design of the flange area helps to form a uniform adsorption force on the top, ensuring that the wafer remains balanced and stable during the adsorption process.

[0040] Specifically: The electrostatic chuck has an adjustable electrostatic area. By adjusting the linear degrees of freedom in the mechanism, it is possible to fine-tune the horizontal position of the electrostatic block, thereby adjusting the position of the adsorbed wafer. The JR force generation component generates a micro-electric field to form a strong electric field, so that the wafer obtains a stable JR adsorption force during adsorption. The design of the flange area not only helps to generate the helium-filled layer, but also ensures that the adsorption force is evenly distributed on the wafer surface, improving the stability and efficiency of adsorption. This electrostatic chuck can be flexibly adjusted during the semiconductor preparation process and is suitable for different process requirements.

[0041] In this solution, all electrical components of the device as a whole rely on AC power for energy supply; specifically, the electrical components of the device as a whole are conventionally electrically connected to the AC power output port through devices such as relays, transformers and button panels to meet the energy supply requirements of all electrical components of the device.

[0042] Specifically, a controller is also provided on the outside of the device, which is used to connect and control all electrical components of the device as a whole to be driven according to a pre-set program as a preset value and a driving mode; it should be pointed out that the above-mentioned driving mode corresponds to the corresponding start and stop time intervals, speed, power and other output parameters between the relevant electrical components mentioned below, that is, it meets the requirements of the relevant electrical components described below to drive the relevant mechanical devices to operate according to the functions described therein.

[0043] In some specific embodiments of this application, please refer to Figure 3 , 4, 6 and 7: The JR force generating assembly includes a bias power supply 4, a first dielectric block 5, an electrode sheet 6 and another first dielectric block 5 arranged at the bottom of the aluminum housing 1 from top to bottom; in the aluminum housing 1, an adjustment mechanism 7 is provided at the upper end of the first dielectric block 5; a helium passage a3 for helium flow is provided in the aluminum housing 1. The bias power supply 4 contacts the first dielectric block 5 at the bottom;

[0044] In this solution: the bias power supply 4 provides power to the JR force generating assembly at the bottom. The assembly includes a first dielectric block 5, an electrode sheet 6 and another first dielectric block 5, forming a layered structure. The adjustment mechanism 7 is located at the upper end of the first dielectric block 5, and the fine adjustment of the entire JR force generating assembly is achieved through the adjustment mechanism. The existence of the helium passage a3 helps to maintain the stability of the helium-filled layer, ensure the insulation performance between the dielectric blocks during the adsorption process, and thus improve the effect of electrostatic adsorption.

[0045] Specifically: The layered structure of the JR force generating component includes a bias power supply 4, a dielectric block 5 and an electrode sheet 6. Through the fine adjustment of the adjustment mechanism 7, the overall electric field distribution can be adjusted under different working conditions to meet the needs of different processes and wafers. The existence of the helium passage a3 helps to maintain the insulation performance between the dielectric blocks and avoid electrical breakdown of the gas. At the same time, the speed of helium circulation can also be adjusted to further optimize the effect of the helium filling layer. This design improves the electrostatic adsorption force while ensuring the stability and reliability of the system.

[0046] It is understandable that the bias power supply 4 plays a key role in this technology. Its main function is to provide appropriate voltage bias to enable the JR force generating component to operate normally. The normal operation of the JR force generating component depends on the appropriate electric field applied to the electrostatic block 704, and the bias power supply 4 is to ensure the formation and control of this electric field. Through appropriate voltage regulation, the bias power supply 4 can maintain the required potential difference during the operation of the electrostatic chuck, thereby generating a JR force adsorption force and achieving stable adsorption of the adsorbed object.

[0047] Furthermore, when the bias power supply 4 contacts the first dielectric block 5 at the bottom, it is equivalent to the bias power supply 4 discharging the first dielectric block 5. Therefore, the scheme of the bias power supply 4 is preferably:

[0048] (1) Discharge diode: The main function of the discharge diode is to discharge at a specific voltage and release the charge into the adjacent dielectric. This component is very practical in situations where the electric field needs to be controlled because it can quickly release the charge when a certain voltage threshold is reached, forming a discharge process. Its installation scheme includes but is not limited to:

[0049] (1.1) Placement on the contact surface: Place the discharge diode on the contact surface of the first dielectric block 5, ensuring that it can directly contact the electrostatic block 704. In this way, when discharge is required, the discharge diode on the dielectric block can release the charge through direct contact.

[0050] (1.2) Surface embedded design: A discharge diode is embedded on the surface of the first dielectric block 5. The discharge diode is embedded in a space designed inside the dielectric block and connected to the contact surface of the electrostatic block 704. This design can protect the discharge diode while ensuring its discharge effect.

[0051] (2) Varistor: A varistor is a component whose resistance value changes with voltage. When the voltage exceeds a certain threshold, the resistance value of the varistor drops sharply, forming an effect similar to discharge. This makes it have application potential in controlling electric fields and dealing with voltage fluctuations. Its installation solutions include but are not limited to:

[0052] (2.1) Coating on the surface: The varistor is coated on the contact surface of the first dielectric block 5. By coating a layer of film or paint, the varistor is directly in contact with the electrostatic block 704, thereby achieving the release of charge. This design is simple and direct.

[0053] (2.2) Embedded design: embed the varistor inside the first dielectric block 5. By embedding the varistor inside the dielectric block and ensuring that it is connected to the contact surface of the electrostatic block 704, the response to the electric field is achieved. Such a design helps to reduce the interference of the external environment on the varistor.

[0054] In some specific embodiments of this application, please refer to Figure 7 : A helium passage b501 for helium circulation is opened in the aluminum casing 1, the helium passage b501 is connected to the helium passage a3, and the helium passage b501 contacts all the first dielectric blocks 5, the electrode sheets 6 and the second dielectric blocks 701 of the adjustment mechanism 7.

[0055] In this solution, the helium passage b501 is provided to provide a stable atmosphere to ensure the normal operation of the JR force generation assembly. The helium passage is connected to the previously mentioned helium passage a3 to ensure uniform flow of helium. The helium passage b501 directly contacts all the first dielectric blocks 5, the electrode sheet 6 and the second dielectric block 701 of the adjustment mechanism 7, which helps to maintain the insulation between these components and prevent electrostatic discharge and gas breakdown.

[0056] Specifically: The introduction of the helium passage b501 provides a stable atmosphere environment, and through the connection with the helium passage a3, the uniform flow of helium is ensured. This is essential for maintaining the normal working state of the JR force generation assembly. At the same time, the direct contact between the helium passage b501 and the first dielectric block, the electrode sheet, and the second dielectric block of the adjustment mechanism helps to maintain insulation performance, prevent electrical breakdown, and improve the safety and reliability of the entire system. This design is not only conducive to the stable formation of the helium layer, but also helps to prevent possible electrostatic interference and electrical failures.

[0057] In some specific embodiments of this application, please refer to Figure 7 :The electrostatic block 704, the second dielectric block 701 and the first dielectric block 5 are not ideal insulating media, that is, there are many particles that can move freely in the dielectric, that is, the dielectric layer has a limited resistance. The contact surface between the electrostatic block 704 and the wafer is the flange area, so many tiny cavities are formed on the contact surface. After the electrode sheet 6 is pressurized, the movable particles in the dielectric are acted upon by the electrode to cause the negatively charged particles to migrate and gather on the upper surface of the first dielectric block 5 at the bottom, while the positively charged particles gather on the lower surface of the first dielectric block 5 at the top; the smaller the body resistance of the dielectric layer and the longer the duration of the applied voltage, the faster the internal charged particles move, thereby generating a number of micro-electric fields and transmitting them to the electrostatic block 704 through the second dielectric block 701, thus forming a micro-electric field in the non-contact small cavity on the contact surface of the electrostatic block 704, and the electric field force generated by these countless micro-electric fields constitutes the JR adsorption force.

[0058] In this scheme: the above principle can be found in the following references:

[0059] Niu Chenxu. Design and manufacture of JR type aluminum nitride ceramic electrostatic chuck [D]. Engineering Technology I. 2017(06). For details, please see the section “2.2 Working principle of electrostatic chuck” on pages 9-10.

[0060] Preferably, according to the material recommendation of the above cited literature (see page 4 for details), the material of the electrostatic block 704, the second dielectric block 701 and the first dielectric block 5 is preferably alumina ceramic or aluminum nitride ceramic as the main material. Ceramic materials have good thermal conductivity, wear resistance and high hardness, and have inherent advantages in electrical insulation compared to metal materials. Due to the special function of the electrostatic chuck, its manufacturing material is required to be different from the conductor material and the insulator material, but belongs to the semiconductor material, so other conductive materials need to be added to it so that its overall resistivity meets the functional requirements.

[0061] Further preferably, according to the material recommendation of the above-mentioned reference (see page 4 for details), the above-mentioned "overall resistance" is between 10^-3 ~10^10 Ω·cm.

[0062] In this solution, by applying pressure to the electrode sheet 6, the movable particles in the dielectric are acted upon by the electrode, and the negatively charged particles migrate and gather on the upper surface of the first dielectric block 5, while the positively charged particles gather on the lower surface of the first dielectric block 5. The smaller the bulk resistance of the dielectric layer, the longer the duration of the applied voltage, and the faster the migration speed of the charged particles inside. This results in the generation of several micro-electric fields, which are transmitted to the electrostatic block 704 through the second dielectric block 701. A micro-electric field is formed in the non-contact small voids on the contact surface of the electrostatic block 704, and the JR adsorption force is formed by these countless micro-electric fields.

[0063] Specifically: Due to the finite resistance of the dielectric layer, the internal charged particles migrate in the dielectric through the action of pressure and applied voltage to form a micro-electric field. These micro-electric fields are transmitted to the electrostatic block 704 through the second dielectric block 701, forming a micro-electric field on the contact surface. The micro-electric field force constitutes the JR adsorption force, which forms a strong adsorption force between the electrostatic block 704 and the wafer. This design utilizes the characteristics of the movable particles in the dielectric layer, and achieves an adjustable electrostatic adsorption effect by controlling the voltage and the resistance of the dielectric layer, thereby improving the stability and controllability of the adsorption force.

[0064] Furthermore, the specific principle of the above process is:

[0065] S1. Pressurizing the electrode sheet 6: When the electrode sheet 6 is pressurized, the applied pressure causes the movable particles in the dielectric to be constrained and deformed. This step utilizes the basic mechanical principle that an object deforms when subjected to force.

[0066] S2. Movement of charged particles in the dielectric: Under the pressure of the electrode sheet 6, the charged particles in the dielectric begin to move. Due to the pressure of the electrode sheet, negatively charged particles move upward and positively charged particles move downward. This is based on the Coulomb force principle of the interaction between charges, that is, charged particles move under the action of the electric field force.

[0067] S3. Relationship between the volume resistance of the dielectric layer and the moving speed: The smaller the volume resistance of the dielectric layer, the better the conductivity of the charge in the dielectric. The longer the applied voltage lasts, the longer the time the charged particles move under the action of the electric field force. According to Ohm's law, the smaller the volume resistance, the greater the current, and the faster the moving speed of the charged particles.

[0068] S4. Generate micro-electric field: The movement of charged particles forms an electric current, which generates a micro-electric field in the dielectric. According to Ampere's circuit theorem, the magnetic field formed by the current changes, thereby generating an electric field. This step involves the principle of electrodynamics.

[0069] S5, the micro electric field is transferred to the electrostatic block 704 through the second dielectric block: The micro electric field generated by the first dielectric block 5 is transferred to the electrostatic block 704 through the second dielectric block 701. This step involves the induction phenomenon of electromagnetism, that is, the propagation of the electric field.

[0070] S5.1. Conductivity of dielectric block: The second dielectric block 701 is a dielectric, and its interior is not an ideal insulator, but has a certain conductivity. Conductivity indicates the conductivity of the dielectric to the electric field. Even an insulator has a small conductivity.

[0071] S5.2. Electric field induction and free electrons in dielectrics: Under the action of an external electric field, the free electrons in the dielectric will be affected by the electric field force and move. This movement forms a micro electric field. Due to the conductivity within the dielectric block, this micro electric field will be conducted within the dielectric.

[0072] S5.3, conduction to electrostatic block 704: The micro-electric field is gradually transmitted to electrostatic block 704 through the conduction effect of the dielectric block. During the conduction process of the electric field, the conductive property of the dielectric block allows the information of the micro-electric field to be transmitted therein.

[0073] S6. Forming a micro electric field on the contact surface of the electrostatic block 704: Through the transmission of the micro electric field, a micro electric field is formed in the non-contact small cavities on the contact surface of the electrostatic block 704. This is the electromagnetic principle of the distribution of the electric field on the surface of the conductor.

[0074] S6.1. Non-contact small voids on the contact surface of electrostatic block 704: There are non-contact small voids on the contact surface of electrostatic block 704. This void does not directly contact dielectric block 701, but the electric field information can still be transmitted to this void through the conduction of the micro-electric field.

[0075] S7. The electric field force generated by the micro electric field forms the JR adsorption force: The electric field force generated by these countless micro electric fields forms the JR adsorption force. This step involves the interaction between the Coulomb force and the adsorption force. The JR adsorption force is an adsorption effect caused by the electric field force, which ensures that the electrostatic chuck firmly adsorbs the adsorbed object.

[0076] S7.1. Micro-electric field forms electric field force: The micro-electric field formed in the non-contact small cavity generates electric field force. This electric field force acts on the contact surface of the electrostatic block 704 to form a JR adsorption force.

[0077] Through the above steps, the whole process realizes the electric field control of the electrostatic chuck system and the generation of JR adsorption force based on the basic principles of mechanics, electrodynamics and electromagnetism.

[0078] In some specific embodiments of this application, please refer to Figure 7The inner wall of the aluminum housing 1 at the electrode sheet 6 is provided with a wiring passage 401 for wiring, and the wiring passage 401 is used to guide the wires of the electrode sheet 6 and the bias power supply unit 4.

[0079] In this solution, the wiring path 401 is provided to effectively guide the wires of the electrode sheet 6 and the bias power supply 4 and connect them to the corresponding power supply and control system. The aluminum housing 1 is designed in coordination with the inner wall of the electrode sheet 6 to ensure smooth wiring of the wires. This helps to maintain the compactness and structural integrity of the entire system, while effectively reducing the connection impedance of the electrode sheet and the bias power supply and improving the electrical performance of the system.

[0080] Specifically: The design of the wiring path 401 allows the wires of the electrode sheet 6 and the bias power supply 4 to be conveniently and effectively guided to their respective positions. This design not only simplifies the connection structure of the system, reduces the crossing and confusion of wires, but also facilitates system maintenance and troubleshooting. Through reasonable wiring, the stability and reliability of the electrode sheet and the bias power supply are improved, ensuring the normal operation of the entire electrostatic chuck system.

[0081] In some specific embodiments of this application, please refer to Figure 5 The adjusting mechanism 7 comprises a second dielectric block 701, which is fixed to the first dielectric block 5. The second dielectric block 701 is provided with a linear slideway for the electrostatic block 704 to move horizontally. The second dielectric block 701 is provided with a linear module for outputting linear degrees of freedom, and the linear module is used to drive the electrostatic block 704 to move horizontally.

[0082] In this solution: the core of the adjustment mechanism 7 is the second dielectric block 701, which forms a fixed structure with the first dielectric block 5. The second dielectric block 701 is provided with a linear slideway for accommodating a linear module, which is responsible for outputting linear degrees of freedom and driving the horizontal movement of the electrostatic block 704. By adjusting the position of the linear module, the horizontal position of the electrostatic block 704 can be fine-tuned, thereby adjusting the position of the adsorbed object.

[0083] Specifically: The design of the adjustment mechanism 7 enables the precise horizontal movement of the electrostatic block 704 through the linear slide groove on the second dielectric block 701. Under the driving action of the linear module, the position of the electrostatic block can be adjusted on the working plane, thereby adjusting the position of the adsorbed object. This design provides a fine-tuning function for the electrostatic chuck, making it adaptable to adsorbed objects of different sizes and shapes, and enhancing the flexibility and adjustability of the system.

[0084] In some specific embodiments of this application, please refer to Figure 5: The linear module includes a rotary actuator 703 and a linear actuator 702 driven by the rotary actuator 703, wherein the linear actuator 702 is connected to an electrostatic block 704; when the rotary actuator 703 is executed, the linear actuator 702 drives the electrostatic block 704 to move horizontally.

[0085] In this solution: the linear module uses a combination of a rotary actuator 703 and a linear actuator 702. The motion of the rotary actuator 703 is transmitted to the linear actuator 702, and the linear actuator 702 is connected to the electrostatic block 704. When the rotary actuator 703 performs a rotational motion, the linear actuator 702 generates a linear motion through a mechanical transmission system, thereby driving the electrostatic block 704 to move horizontally. This design combines rotation and linear motion to provide precise control of the position of the electrostatic block.

[0086] Specifically: A linear module consisting of a rotary actuator 703 and a linear actuator 702 is used to realize the horizontal movement of the electrostatic block 704. The rotary motion of the rotary actuator 703 is transmitted to the electrostatic block 704 via the linear actuator 702, so that the electrostatic block can move accurately in the horizontal direction. This design provides a highly controllable linear degree of freedom, so that the electrostatic chuck can flexibly respond to the needs of various processes and adsorbed objects, increasing the applicability and accuracy of the system.

[0087] In some specific embodiments of this application, please refer to Figure 5 : The linear actuator 702 is a micro servo motor, and the linear actuator 702 is a screw rod, and the threaded surface of the screw rod is threadedly connected to the inner wall of the electrostatic block 704. The double-end shaft head of the screw rod is rotatably matched in the second dielectric block 701 through bearings, and the micro servo motor is fixed in the second dielectric block 701. When the micro servo motor executes the screw rod to rotate, the screw rod drives the electrostatic block 704 to move horizontally.

[0088] In this solution: the linear actuator 702 uses a micro servo motor as a power source, and the screw rod is used as a transmission mechanism for rotational motion. The threaded surface of the screw rod is connected to the inner wall thread of the electrostatic block 704, forming a mechanical transmission system. The double-end shaft head of the screw rod is rotatably matched in the second dielectric block 701 through bearings, and the micro servo motor is fixed in the second dielectric block 701. When the micro servo motor executes the screw rod to rotate, the linear motion of the screw rod is transmitted to the electrostatic block 704, realizing the horizontal movement of the electrostatic block.

[0089] Preferably, the model of the micro servo motor is 108828 of the A-max series of Maxon, an insulating shell needs to be provided on the outside, and the output shaft needs to be replaced with a shaft of insulating material, and the screw rod should also be made of insulating material.

[0090] Specifically: A combination of a micro servo motor and a lead screw is used to achieve high-precision horizontal movement of the electrostatic block 704. The micro servo motor provides controllable rotational power, while the linear motion of the lead screw is transmitted to the electrostatic block 704. The threaded connection of the lead screw ensures the accuracy and smoothness of the transmitted motion. This design combines the high precision of the micro servo motor and the stability of the lead screw, making the electrostatic chuck have higher precision and reliability when adsorbing objects.

[0091] In some specific embodiments of this application, please refer to Figure 3 and 7 : A spiral coolant pipe 2 is provided in the aluminum casing 1.

[0092] In this solution, the coolant pipe 2 is arranged in a spiral shape inside the aluminum housing 1. The purpose of this design is to control the heat that may be generated when the electrostatic chuck is working by circulating the coolant. The spiral arrangement helps to increase the surface area of ​​the coolant pipe, improve the heat dissipation effect, and ensure that the system maintains a low temperature when working.

[0093] Specifically: The introduction of the coolant pipe 2 effectively reduces the operating temperature of the system and prevents performance degradation or damage caused by overheating. The spiral arrangement enhances the heat exchange efficiency between the coolant and the housing, and improves the heat dissipation performance of the entire system. This design ensures that the electrostatic chuck can maintain a stable temperature during long-term operation, improving the reliability and durability of the system.

[0094] In this solution, the coolant pipe 2 of the entire device relies on an external coolant tank and its water pump for energy supply; specifically, the coolant pipe 2 and the water pump outlet of the coolant tank are conventionally hydraulically connected through solenoid valves, reversing valves, pipe bodies and other devices to perform water circulation.

[0095] Preferably, the driving synchronization of the above-mentioned hydraulic elements is controlled by a controller.

[0096] Preferably, the coolant pipe 2 can also maintain its shape characteristics as shown in the figure, and use a copper foil tube as a heat dissipation pipe. Further, the above-mentioned coolant tank, that is, the water pump and other components can be omitted.

[0097] In summary, in view of the related problems in the conventional technology, this specific implementation is based on the electrostatic chuck with adjustable electrostatic area provided above, and adopts the following technical means or features to achieve the solution:

[0098] (1) Adjustable position of the electrostatic zone: In this embodiment, the electrostatic block 704 can be moved horizontally through the design of the adjustment mechanism 7 and the linear module. This design provides flexible adjustment of the position of the electrostatic zone, allowing the system to adapt to the needs of different processes and adsorbed objects, and effectively solves the problem that the position of the electrostatic zone cannot be adjusted in traditional technologies.

[0099] (2) Implementation of fine-tuning function: In this embodiment, a linear module is used, which includes a combination of a rotary actuator 703 and a linear actuator 702. Through the cooperation of a micro servo motor and a lead screw, precise horizontal movement of the electrostatic block 704 is achieved. This enables fine-tuning of the position of the adsorbed object during the process, solving the problem of lack of fine-tuning function in traditional technologies.

[0100] In summary, from the principle level, the present embodiment achieves flexible adjustment and fine-tuning of the electrostatic zone position by introducing an adjustable mechanism and a linear module. This makes the system more flexible, able to adapt to the requirements of different processes and adsorption objects, and improves the performance and applicability of the adsorption system.

[0101] The above-mentioned embodiments only express the implementation methods of the relevant practical applications of the utility model, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the utility model patent. It should be pointed out that for ordinary technicians in this field, several modifications and improvements can be made without departing from the concept of the utility model, and these all belong to the protection scope of the utility model. Therefore, the protection scope of the utility model patent shall be based on the attached claims.

Claims

1. An electrostatic chuck with adjustable electrostatic area, comprising an aluminum housing (1) and a JR force generating assembly installed therein, Features: An adjustment mechanism (7) is provided at the top of the aluminum casing (1); The adjustment mechanism (7) includes at least three linear degrees of freedom arranged in a coaxial annular array, the direction of each linear degree of freedom being staggered on a horizontal plane, and when the linear degrees of freedom are executed, an electrostatic block (704) is driven to move horizontally; The electrostatic block (704) is provided with a plurality of flange areas for generating a helium-filled layer, and the top of the flange area is used for adsorbing wafers; When the JR force generating component is executed, a plurality of micro electric fields are generated for the electrostatic block (704), and the micro electric fields gather in the flange area to form a strong electric field, and the strong electric field forms a JR adsorption force on the wafer.

2. The electrostatic chuck with adjustable electrostatic area according to claim 1, Features: The JR force generating assembly comprises a bias power supply unit (4), a first dielectric block (5), an electrode sheet (6) and another first dielectric block (5) arranged at the bottom of the aluminum housing (1) from top to bottom; In the aluminum housing (1), the upper end of the first dielectric block (5) is provided with the adjustment mechanism (7); A helium passage a (3) for helium circulation is provided in the aluminum casing (1).

3. The electrostatic chuck with adjustable electrostatic area according to claim 2, Features: A helium passage b (501) for helium circulation is provided in the aluminum housing (1), the helium passage b (501) is connected to the helium passage a (3), and the helium passage b (501) is in contact with all of the first dielectric blocks (5), the electrode sheets (6) and the regulating mechanism (7).

4. The electrostatic chuck with adjustable electrostatic area according to claim 2, Features: The inner wall of the aluminum housing (1) is provided with a wiring passage (401) for wiring at the electrode sheet (6), and the wiring passage (401) is used to guide the wires of the electrode sheet (6) and the bias power supply unit (4).

5. The electrostatic chuck with adjustable electrostatic area according to claim 1, Features: The adjustment mechanism (7) comprises a second dielectric block (701), the second dielectric block (701) being provided with a linear slide groove for the electrostatic block (704) to move horizontally, the second dielectric block (701) being provided with a linear module for outputting the linear degree of freedom, the linear module being used to drive the electrostatic block (704) to move horizontally.

6. The electrostatic chuck with adjustable electrostatic area according to claim 5, Features: The linear module comprises a rotary actuator (703) and a linear actuator (702) driven by the rotary actuator, wherein the linear actuator (702) is connected to the electrostatic block (704); when the rotary actuator (703) is actuated, the linear actuator (702) drives the electrostatic block (704) to move horizontally.

7. The electrostatic chuck with adjustable electrostatic area according to claim 6, Features: The linear actuator (702) is a micro servo motor, and the linear actuator (702) is a lead screw, and the threaded surface of the lead screw is threadedly connected to the inner wall of the electrostatic block (704).

8. The electrostatic chuck with adjustable electrostatic area according to any one of claims 1 to 7, Features: A spiral coolant pipe (2) is provided in the aluminum casing (1).

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