Heterojunction solar cell, photovoltaic module and photovoltaic system

Abstract

The utility model relates to a heterojunction solar cell, a photovoltaic module and a photovoltaic system. The heterojunction solar cell comprises a substrate, and intrinsic amorphous silicon layers, doped semiconductor film layers and transparent conducting layers are sequentially arranged on the surfaces of the two opposite sides of the substrate in a stacked mode. The transparent conductive layers on the two opposite sides of the substrate are electrically connected with grid line electrodes; wherein the grid line electrode comprises a plurality of thin grid lines, the distance between every two adjacent thin grid lines is 0.4 mm-1 mm, and / or the substrate is a silicon substrate with the resistivity being 0.2-0.8 ohmcm. Therefore, the dependence of photon-generated carrier transmission on the transparent conductive layer can be reduced, so that the requirement on the conductive transmission performance of the transparent conductive layer can be reduced, the indium doping amount in the transparent conductive layer can be reduced, the indium consumption can be reduced, the production cost of the heterojunction solar cell can be reduced, and the development of the heterojunction solar cell is facilitated.

Description

Technical Field

[0001] The present application relates to the field of photovoltaic technology, and in particular to a heterojunction solar cell, a photovoltaic module and a photovoltaic system. Background Art

[0002] Solar cells, also known as photovoltaic cells, are semiconductor devices that convert sunlight directly into electrical energy. As they are green and environmentally friendly products that do not cause environmental pollution, and solar energy is a renewable resource, solar cells are a new type of battery with broad development prospects.

[0003] Heterojunction cells have the advantages of simple structure, low process temperature, good passivation effect, high open circuit voltage, good temperature characteristics, and double-sided power generation. They are one of the hot directions of high-conversion-efficiency silicon-based solar cells.

[0004] The heterojunction battery in the related technology has high requirements on the conductive transmission performance of the transparent conductive layer because the photogenerated carriers are mainly transmitted to the fine grid lines by the transparent conductive layer. The transparent conductive layer is often made of indium-containing target materials. However, indium metal is a rare metal with a small global stock, high cost and limited supply, which leads to high production costs of heterojunction batteries and restricts the development of heterojunction batteries. Summary of the invention

[0005] Based on this, the present application provides a heterojunction solar cell, a photovoltaic module and a photovoltaic system to reduce the production cost of heterojunction solar cells and facilitate the development of heterojunction solar cells.

[0006] An embodiment of the first aspect of the present application provides a heterojunction solar cell, comprising a substrate, wherein an intrinsic amorphous silicon layer, a doped semiconductor film layer and a transparent conductive layer are sequentially stacked on opposite sides of the substrate; the transparent conductive layers on opposite sides of the substrate are electrically connected to gate line electrodes; wherein the gate line electrodes include a plurality of fine gate lines, and the spacing between adjacent fine gate lines is 0.4mm-1mm; and / or the substrate is a silicon substrate with a resistivity of 0.2-0.8ohmcm.

[0007] In some embodiments, the transparent conductive layer is an indium-free transparent conductive layer.

[0008] In some of the embodiments, the thickness of the indium-free transparent conductive layer is 50-100 nm.

[0009] In some embodiments, the material of the indium-free transparent conductive layer includes one of tin oxide, zinc oxide, aluminum-doped zinc oxide, zirconium-doped zinc oxide and zirconium-doped aluminum-doped zinc oxide.

[0010] In some of the embodiments, a transition layer is further included, and the transition layer is disposed on at least one side of the substrate, and the transition layer is located between the transparent conductive layer and the doped semiconductor film layer on the corresponding side.

[0011] In some embodiments, the transition layer is a transparent conductive layer containing indium.

[0012] In some embodiments, the indium-containing transparent conductive layer has a thickness of 5-20 nm.

[0013] In some embodiments, the material of the indium-containing transparent conductive layer includes one of tin-doped indium oxide, tungsten-doped indium oxide, cerium-doped indium oxide, and VTTO.

[0014] In some embodiments, the material of the transition layer includes one of silicon oxide, aluminum oxide, and titanium oxide.

[0015] In some of the embodiments, the thickness of the transition layer is 0.5-2 nm.

[0016] In some embodiments, the plurality of fine grid lines include a plurality of first fine grid lines arranged at intervals along a first direction and extending along a second direction, and a plurality of second fine grid lines arranged at intervals along the second direction and extending along the first direction, and the plurality of first fine grid lines and the plurality of second fine grid lines are in a crossed grid shape; the spacing between adjacent first fine grid lines is 0.4mm-1mm, and the spacing between adjacent second fine grid lines is 0.4mm-1mm; the first direction and the second direction intersect.

[0017] In some embodiments, the gate line electrode also includes a plurality of main gate lines, which are arranged at intervals along a first direction and extend along a second direction; the plurality of fine gate lines are arranged at intervals along the second direction and extend along the first direction; the plurality of main gate lines and the plurality of fine gate lines are in a crossed grid shape; the first direction and the second direction intersect.

[0018] An embodiment of the second aspect of the present application provides a photovoltaic module, including a heterojunction solar cell according to any one of the first aspects.

[0019] An embodiment of the third aspect of the present application provides a photovoltaic system, characterized in that it includes the photovoltaic component described in the second aspect.

[0020] In the above heterojunction solar cell, the transparent conductive layers on the opposite sides of the substrate are electrically connected to the grid line electrodes, and the grid line electrodes include a plurality of fine grid lines, and the spacing between adjacent fine grid lines is 0.4mm-1mm, and / or the substrate has a silicon substrate with a resistivity of 0.2-0.8ohmcm. In this way, the spacing between adjacent fine grid lines is small, and the conductivity of the substrate is high. On the one hand, the distance that the photogenerated carriers are transmitted to the fine grid lines horizontally and vertically through the transparent conductive layer can be shortened. On the other hand, most of the photogenerated carriers can be transmitted through the substrate to the vicinity of the fine grid lines, and then transmitted to the fine grid lines by the transparent conductive layer. Thus, the dependence of the photogenerated carrier transmission on the transparent conductive layer can be reduced, thereby reducing the requirements for the conductive transmission performance of the transparent conductive layer, which is conducive to reducing the indium doping amount in the transparent conductive layer, or even no indium doping, thereby greatly reducing the indium consumption, effectively reducing the production cost of heterojunction solar cells, and is conducive to expanding the mass production scale of heterojunction solar cells, and is conducive to the development of heterojunction solar cells. In addition, the spacing between adjacent fine grid lines is small, which is conducive to increasing the number of fine grid lines, thereby improving the current collection capability of the heterojunction solar cell, and further improving the conversion efficiency of the heterojunction solar cell. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 Schematic diagram of the cross-sectional structure of a heterojunction solar cell in some embodiments of the present application.

[0022] Figure 2 Schematic diagram of a heterojunction solar cell in some embodiments of the present application.

[0023] Figure 3 Schematic diagram of a plan view of a heterojunction solar cell in some other embodiments of the present application.

[0024] Figure 4 Schematic diagram of the cross-sectional structure of a heterojunction solar cell in some other embodiments of the present application.

[0025] Figure 5 for Figure 4 Schematic diagram of the local structure.

[0026] Description of reference numerals:

[0027] 10. Heterojunction solar cells;

[0028] 110, substrate; 120, intrinsic amorphous silicon layer; 130, doped semiconductor film layer; 140, transparent conductive layer; 150, gate line electrode; 151, fine gate line; 1511, first fine gate line; 1512, second fine gate line; 152, main gate line; 160, transition layer; X, first direction; Y, second direction. DETAILED DESCRIPTION

[0029] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0030] In the description of the present application, it should be understood that if the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. appear, the orientation or position relationship indicated by these terms is based on the orientation or position relationship shown in the accompanying drawings, which is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application.

[0031] In addition, if the terms "first" or "second" appear, these terms are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of this application, if the term "plurality" appears, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0032] In this application, unless otherwise clearly specified and limited, if the terms "installed", "connected", "connected", "fixed" and the like appear, these terms should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integrated connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances.

[0033] In the present application, unless otherwise clearly specified and limited, if there is a description that a first feature is "above" or "below" a second feature, etc., or similar descriptions appear, it may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature being "above", "above" and "above" the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. The first feature being "below", "below" and "below" the second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0034] It should be noted that if an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be a central element. If an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. If any, the terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used in this application are for illustrative purposes only and do not represent the only implementation method.

[0035] Solar cell power generation is a sustainable source of clean energy. It uses the photovoltaic effect of semiconductor PN junction to convert sunlight into electrical energy. Heterojunction cells have the advantages of simple structure, low process temperature, good passivation effect, high open circuit voltage, good temperature characteristics, and double-sided power generation. It is one of the hot directions of high conversion efficiency silicon-based solar cells.

[0036] In the heterojunction battery in the related technology, the conductivity of the amorphous silicon / microcrystalline silicon layer is poor, and the distance between the fine grid lines is more than 1.5mm, so that the photogenerated carriers are mainly transmitted to the fine grid lines by the transparent conductive layer, so the conductive transmission performance of the transparent conductive layer is relatively high. The transparent conductive layer is made of indium-containing target material; however, indium metal is a rare metal with a small global stock, high cost and limited supply, which leads to high production costs of heterojunction batteries and restricts the development of heterojunction batteries.

[0037] Based on the above technical problems, the present application provides a heterojunction solar cell, a photovoltaic module and a photovoltaic system to reduce the production cost of heterojunction solar cells and facilitate the development of heterojunction solar cells.

[0038] Figure 1 A schematic diagram of the structure of a heterojunction solar cell in some embodiments of the present application is shown; Figure 2 A schematic plan view of a heterojunction solar cell in some embodiments of the present application is shown; Figure 3 Schematic diagram of a plan view of a heterojunction solar cell in some other embodiments of the present application.

[0039] See also Figures 1 to 3 As shown, an embodiment of the first aspect of the present application provides a heterojunction solar cell 10, including a substrate 110, wherein two opposite surfaces of the substrate 110 are sequentially stacked with an intrinsic amorphous silicon layer 120, a doped semiconductor film layer 130 and a transparent conductive layer 140; the transparent conductive layers 140 on the opposite sides of the substrate 110 are electrically connected to gate electrodes 150; wherein the gate electrode 150 includes a plurality of fine gate lines 151, the spacing between adjacent fine gate lines 151 is 0.4mm-1mm, and / or the substrate 110 is a silicon substrate with a resistivity of 0.2-0.8ohmcm.

[0040] It should be noted that the doped semiconductor film layer 130 includes one or more of a doped amorphous silicon film layer, a doped microcrystalline silicon film layer and a doped nanocrystalline silicon film layer, which can be applied to the low-temperature manufacturing process of the heterojunction solar cell 10 to improve the open circuit voltage of the heterojunction solar cell 10.

[0041] In the heterojunction solar cell 10 provided in the embodiment of the present application, the transparent conductive layers 140 on opposite sides of the substrate 110 are electrically connected to the gate line electrodes 150, and the gate line electrodes 150 include a plurality of fine gate lines 151. The spacing between adjacent fine gate lines 151 is 0.4mm-1mm, and / or the substrate 110 has a silicon base with a resistivity of 0.2-0.8ohmcm. In this way, the spacing between adjacent fine grid lines 151 is small, and the conductivity of the substrate is high. On the one hand, the distance that the photogenerated carriers are transmitted horizontally and vertically to the fine grid lines 151 through the transparent conductive layer 140 can be shortened. On the other hand, most of the photogenerated carriers can be transmitted through the substrate 110 to the vicinity of the fine grid lines 151, and then transmitted to the fine grid lines 151 by the transparent conductive layer 140. Therefore, the dependence of the photogenerated carrier transmission on the transparent conductive layer 140 can be reduced, thereby reducing the requirements for the conductive transmission performance of the transparent conductive layer 140, which is conducive to reducing the indium doping amount in the transparent conductive layer, or even no indium doping, thereby greatly reducing the indium consumption, effectively reducing the production cost of the heterojunction solar cell 10, and is conducive to expanding the mass production scale of the heterojunction solar cell 10, and is conducive to the development of the heterojunction solar cell 10. In addition, the spacing between adjacent fine grid lines 151 is small, which is conducive to increasing the number of fine grid lines 151, thereby being conducive to improving the current collection capacity of the heterojunction solar cell 10, and further improving the conversion efficiency of the heterojunction solar cell 10.

[0042] In some embodiments, the transparent conductive layer 140 is an indium-free transparent conductive layer. Thus, the restriction of indium metal on the development of heterojunction solar cells 10 can be solved, the cost can be saved to the greatest extent, the problem of limited production of heterojunction solar cells 10 due to indium supply can be alleviated, and the development of heterojunction solar cells 10 can be promoted.

[0043] In some of the embodiments, the thickness of the indium-free transparent conductive layer is 50 nm to 100 nm, which improves the conductivity of the indium-free transparent conductive layer for photogenerated carriers and helps to improve the photoelectric conversion efficiency of the heterojunction solar cell 10.

[0044] In some embodiments, the material of the indium-free transparent conductive layer includes one of tin oxide, zinc oxide, aluminum-doped zinc oxide, zirconium-doped zinc oxide and zirconium-doped aluminum-doped zinc oxide.

[0045] like Figure 4 and Figure 5 As shown, in some embodiments, a transition layer 160 is further included, and the transition layer 160 is disposed on at least one side of the substrate 110, and the transition layer 160 is located between the transparent conductive layer 140 and the doped semiconductor film layer 130 on the corresponding side. Thus, the transition layer 160 and the transparent conductive layer 140 are superimposed to provide a transition between the doped semiconductor film layer 130 and the gate electrode 150, which is beneficial to the transmission of photogenerated carriers, reduces the contact resistance between the transparent conductive layer 140, especially the indium-free transparent conductive layer 140 and the doped semiconductor film layer 130, and further reduces the series resistance, improves the fill factor, and is beneficial to improve the conversion efficiency of the heterojunction solar cell 10.

[0046] In some embodiments, the transition layer 160 is an indium-containing transparent conductive layer. In a specific example, the thickness of the indium-containing transparent conductive layer is 5 nm to 20 nm. Thus, the metallization contact between the transparent conductive layer 140 and the gate electrode 150 and the doped semiconductor film layer 130 can be improved, which is beneficial to the transmission of photogenerated carriers, reduces the series resistance, improves the fill factor, and further helps to improve the conversion efficiency of the heterojunction solar cell 10.

[0047] In some embodiments, the material of the indium-containing transparent conductive layer includes one of tin-doped indium oxide ITO, tungsten-doped indium oxide IWO, cerium-doped indium oxide ICO, and VTTO.

[0048] In some embodiments, the material of the transition layer 160 includes one of silicon oxide, aluminum oxide, and titanium oxide. In this way, a transition can be provided between the transparent conductive layer 140 and the doped semiconductor film layer 130, and the contact resistance between the transparent conductive layer 140, especially the indium-free transparent conductive layer 140 and the doped semiconductor film layer 130 can be reduced, which is beneficial to the transmission of photogenerated carriers and the improvement of the conversion efficiency of the heterojunction solar cell 10.

[0049] In some embodiments, the transition layer 160 has a thickness of 0.5-2 nm.

[0050] like Figure 3As shown, in some embodiments, the plurality of fine grid lines 151 include a plurality of first fine grid lines 1511 arranged at intervals along the first direction X and extending along the second direction Y, and a plurality of second fine grid lines 1512 arranged at intervals along the second direction Y and extending along the first direction X; the plurality of first fine grid lines 1511 and the plurality of second fine grid lines 1512 are in a crossed grid shape; the spacing between adjacent first fine grid lines 1511 is 0.4 mm-1 mm, and the spacing between adjacent second fine grid lines 1512 is 0.4 mm-1 mm; the first direction X and the second direction Y intersect. That is to say, the heterojunction solar cell 10 can be a main grid-free solar cell, thereby overcoming the light blocking of the main grid, increasing the light receiving area of ​​the heterojunction solar cell 10, improving the light energy utilization rate of the heterojunction solar cell 10, and further improving the conversion efficiency of the heterojunction solar cell 10; in addition, the spacing between adjacent first fine grid lines 1511 and the spacing between adjacent second fine grid lines 1512 are both small, which can increase the number of fine grid lines 151, which is beneficial to improving the current collection capacity of the heterojunction solar cell 10 and the conversion efficiency of the heterojunction solar cell 10.

[0051] like Figure 2 As shown, in some embodiments, the grid electrode 150 further includes a plurality of main grid lines 152, the plurality of main grid lines 152 are arranged at intervals along the first direction X and extend along the second direction Y, and a plurality of fine grid lines 151 are arranged at intervals along the second direction Y and extend along the first direction X; the plurality of main grid lines 152 and the plurality of fine grid lines 151 are in a cross grid shape; the first direction X intersects the second direction Y. Thus, current can be collected through the plurality of fine grid lines 151, and the current can be timely conducted through the main grid lines 152, so as to improve the conversion efficiency of the heterojunction solar cell 10.

[0052] Several specific examples are given below to illustrate the indium doping amount and conversion efficiency of the heterojunction solar cell according to the embodiments of the present application.

[0053] Table 1: Indium doping and conversion efficiency changes of different heterojunction solar cells

[0054]

[0055] It should be noted that the line width and line height of the gate lines in the above examples are consistent, the thickness of the substrate is consistent, and the manufacturing path of the heterojunction solar cell is consistent.

[0056] It can be seen from Table 1 that by reducing the resistivity of the substrate to 0.2-0.8 ohmcm, reducing the spacing between adjacent fine grid lines to 0.4mm-1mm, and coordinating the transition layer and the transparent conductive layer, the indium consumption of the heterojunction solar cell can be reduced while ensuring that the conversion efficiency of the heterojunction solar cell remains basically unchanged, and even improving the conversion efficiency of the heterojunction solar cell, thereby reducing the production cost of the heterojunction solar cell and facilitating the development of the heterojunction solar cell.

[0057] An embodiment of the second aspect of the present application provides a photovoltaic module, including the heterojunction solar cell 10 according to any one of the first aspects.

[0058] The photovoltaic module provided by the embodiment of the present application includes the heterojunction solar cell 10 described in any one of the first aspects, and the transparent conductive layers 140 on the opposite sides of the substrate 110 of the heterojunction solar cell 10 are electrically connected to the gate line electrodes 150, and the gate line electrodes 150 include a plurality of fine gate lines 151, by making the spacing between adjacent fine gate lines 151 0.4mm-1mm, and / or the substrate 110 has a silicon base with a resistivity of 0.2-0.8ohmcm. In this way, the spacing between adjacent fine grid lines 151 is small, and the conductivity of the substrate is high. On the one hand, the distance that the photogenerated carriers are transmitted horizontally and vertically to the fine grid lines 151 through the transparent conductive layer 140 can be shortened. On the other hand, most of the photogenerated carriers can be transmitted through the substrate 110 to the vicinity of the fine grid lines 151, and then transmitted to the fine grid lines 151 by the transparent conductive layer 140. Therefore, the dependence of the photogenerated carrier transmission on the transparent conductive layer 140 can be reduced, and the requirements for the conductive transmission performance of the transparent conductive layer 140 can be reduced, which is conducive to reducing the indium doping amount in the transparent conductive layer, or even no indium doping, thereby greatly reducing the indium consumption, effectively reducing the production cost of the heterojunction solar cell 10, and further effectively reducing the production cost of the photovoltaic module; in addition, the spacing between adjacent fine grid lines 151 is small, which is conducive to increasing the number of fine grid lines 151, and is conducive to improving the current collection capacity of the heterojunction solar cell 10, thereby being conducive to improving the conversion efficiency of the heterojunction solar cell 10, and further improving the efficiency of the photovoltaic module.

[0059] The third aspect of the present application provides a photovoltaic system, characterized in that it includes the photovoltaic assembly described in the second aspect, so as to reduce the production cost of the photovoltaic system and improve the efficiency of the photovoltaic system.

[0060] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0061] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. A heterojunction solar cell, characterized in that: It comprises a substrate, wherein two opposite surfaces of the substrate are sequentially stacked with an intrinsic amorphous silicon layer, a doped semiconductor film layer and a transparent conductive layer; the transparent conductive layers on the two opposite sides of the substrate are electrically connected to gate line electrodes; Wherein, the gate line electrode comprises a plurality of fine gate lines, and the spacing between adjacent fine gate lines is 0.4 mm-1 mm; And / or, the substrate is a silicon substrate with a resistivity of 0.2-0.8 ohmcm.

2. The heterojunction solar cell according to claim 1, characterized in that: The transparent conductive layer is an indium-free transparent conductive layer.

3. The heterojunction solar cell according to claim 2, characterized in that: The thickness of the indium-free transparent conductive layer is 50-100 nm.

4. The heterojunction solar cell according to claim 2, characterized in that: The material of the indium-free transparent conductive layer includes one of tin oxide, zinc oxide, aluminum-doped zinc oxide, zirconium-doped zinc oxide and zirconium-doped aluminum-doped zinc oxide.

5. The heterojunction solar cell according to claim 1, characterized in that: It also includes a transition layer, which is arranged on at least one side of the substrate, and the transition layer is located between the transparent conductive layer and the doped semiconductor film layer on the corresponding side.

6. The heterojunction solar cell according to claim 5, characterized in that: The transition layer is a transparent conductive layer containing indium.

7. The heterojunction solar cell according to claim 6, characterized in that: The thickness of the indium-containing transparent conductive layer is 5-20 nm.

8. The heterojunction solar cell according to claim 6, characterized in that: The material of the indium-containing transparent conductive layer includes one of tin-doped indium oxide, tungsten-doped indium oxide, cerium-doped indium oxide, and VTTO.

9. The heterojunction solar cell according to claim 5, characterized in that: The material of the transition layer includes one of silicon oxide, aluminum oxide and titanium oxide.

10. The heterojunction solar cell according to claim 9, characterized in that: The thickness of the transition layer is 0.5-2 nm.

11. The heterojunction solar cell according to claim 1, characterized in that: The multiple fine grid lines include a plurality of first fine grid lines arranged at intervals along the first direction and extending along the second direction, and a plurality of second fine grid lines arranged at intervals along the second direction and extending along the first direction; the multiple first fine grid lines and the multiple second fine grid lines are in a crossed grid shape; the spacing between adjacent first fine grid lines is 0.4mm-1mm, and the spacing between adjacent second fine grid lines is 0.4mm-1mm; the first direction and the second direction intersect.

12. The heterojunction solar cell according to claim 1, characterized in that: The gate line electrode also includes a plurality of main gate lines, which are arranged at intervals along a first direction and extend along a second direction; the plurality of fine gate lines are arranged at intervals along the second direction and extend along the first direction; the plurality of main gate lines and the plurality of fine gate lines are in a crossed grid shape; the first direction and the second direction intersect.

13. A photovoltaic module, characterized in that: Comprising the heterojunction solar cell according to any one of claims 1 to 12.

14. A photovoltaic system, characterized in that: Comprising the photovoltaic module according to claim 13.

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