IOC pipeline detection device for chemical vapor deposition machine

By introducing control valves and pressure monitoring modules into the IOC pipeline detection device, the pipeline pressure is monitored and controlled in real time, and the problem of wafer damage during IOC pipeline pressure adjustment during chemical vapor deposition is solved, and the pipeline pressure is achieved Real-time monitoring and automatic protection improve the safety of wafers.

CN222332056UActive Publication Date: 2025-01-10HEJIAN TECH SUZHOU
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Patent Information

Application Number
CN202421207436.3
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-05-30
Publication Date
2025-01-10
Estimated Expiration
2034-05-30

AI Technical Summary

Technical Problem

During the chemical vapor deposition process, the IOC pipeline pressure adjustment cannot be monitored in real time, resulting in the instantaneous damage to the wafer by back pressure. The existing technology lacks effective monitoring and protection measures.

Method used

An IOC pipeline detection device is designed, including the first and second pipelines connected to the IOC, and the control valve and the pressure monitoring module are connected through the third pipeline to monitor the pipeline pressure and opening and closing conditions in real time, and in abnormal situations. Automatic shutdown in case of excessive pressure to prevent contamination and wafer damage.

Benefits of technology

Real-time monitoring and control of IOC pipeline pressure is achieved, wafer damage caused by excessive pressure in the moment of back pressure is avoided, wafer safety is ensured, and wafer scrapping is reduced.

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Abstract

The utility model relates to the technical field of semiconductors, and discloses an IOC pipeline detection device for a chemical vapor deposition machine table, which comprises a first pipeline and a second pipeline which are connected with an IOC, and a third pipeline communicated with the first pipeline and the second pipeline, the first pipeline is connected with a gas source, a first valve is arranged on the first pipeline, the second pipeline is connected with a vacuum pump, and the third pipeline is connected with a second valve. The third pipeline is provided with a control valve and a pressure monitoring module, and the control valve is in communication connection with the pressure monitoring module. By arranging the control valve and the pressure monitoring module, the opening and closing condition of the pipeline and the pressure condition in the IOC are monitored in real time, the pollution problem caused by the fact that the pressure in the pipeline is too large at the moment of pressure return is avoided, when the abnormal condition is monitored, a machine table can be automatically linked to conduct shutdown operation, and real-time detection of the pipeline is achieved.
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Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, and in particular to an IOC pipeline detection device for chemical vapor deposition. Background Art

[0002] Plasma Enhanced Chemical Vapor Deposition (PECVD) is a key process in integrated circuit manufacturing and plays an important role in growing thin films. On the wafer production line, the location where the wafer is temporarily stored is the wafer temporary storage chamber or the in-out chamber (IOC). The IOC provides a temporary storage space for the wafer between the process steps to ensure that the wafer will not be contaminated or damaged during the transfer process. The vacuum robot arm in the wafer transfer chamber grabs the wafer and transfers it to the reaction chamber. After the reaction, the vacuum robot arm grabs the wafer again and places it in the IOC for temporary storage. Since the next step is to grab the wafer to the atmospheric environment, it is necessary to pressurize the IOC back to the standard atmospheric pressure at this time, and another robot arm can take the wafer out of the IOC. However, during the pressurization process, due to the high pressure in the pipeline, there may be a problem that the pollutants in the IOC are blown up due to the excessive gas pressure at the moment of back pressure, thereby damaging the wafer. Therefore, it is necessary to perform pressure relief on the gas pipeline, but in the prior art, there is no monitoring in the pressure adjustment process, and wafer scrapping occurs frequently.

[0003] Therefore, there is a need for improving the IOC pipeline detection device in the prior art. Utility Model Content

[0004] In view of this, the purpose of the embodiment of the utility model is to propose an IOC pipeline detection device for a chemical vapor deposition machine, which solves the problem of being unable to monitor the pipeline pressure in real time during pipeline pressure relief, thereby preventing damage to the wafer due to pressure difference problems.

[0005] Based on the above purpose, the embodiment of the utility model provides an IOC pipeline detection device for a chemical vapor deposition machine, comprising:

[0006] A first pipeline and a second pipeline connected to the IOC, and a third pipeline connecting the first pipeline and the second pipeline, the first pipeline is connected to the gas source, a first valve is arranged on the first pipeline, the second pipeline is connected to the vacuum pump, and a control valve and a pressure monitoring module are arranged on the third pipeline, and the control valve and the pressure monitoring module are communicatively connected.

[0007] In some embodiments, the first valve is a solenoid valve.

[0008] In some embodiments, the IOC includes 6 to 8 wafer placement positions.

[0009] In some embodiments, the pressure monitoring module is a pressure sensor.

[0010] In some embodiments, the gas source is a nitrogen gas source.

[0011] In some embodiments, the device further comprises a display screen to display the valve opening status and the pressure value in the pipeline.

[0012] In some embodiments, the device further comprises an alarm module.

[0013] In some embodiments, a gas filter is provided at the connection between the first pipeline and the IOC.

[0014] In some embodiments, a gas flow meter is also provided on the first pipeline.

[0015] In some embodiments, the pressure monitoring module and the control valve are also electrically connected to the machine switch.

[0016] The utility model has at least the following beneficial technical effects:

[0017] The utility model provides an IOC pipeline detection device for a chemical vapor deposition machine. When back pressure is required in the IOC, pressure relief is performed by introducing a third pipeline, and a control valve and a pressure monitoring module are connected to the pipeline to monitor the opening and closing conditions of the pipeline and the pressure conditions in the IOC in real time, thereby avoiding pollution problems caused by excessive pressure in the pipeline at the moment of back pressure. When an abnormal condition is detected, the machine can be automatically linked to perform a shutdown operation, thereby realizing real-time detection of the pipeline. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the utility model. For ordinary technicians in this field, other embodiments can be obtained based on these drawings without paying creative work.

[0019] Figure 1 A schematic diagram of an embodiment of an IOC pipeline detection device for a chemical vapor deposition machine provided by the utility model.

[0020] Description of reference numerals:

[0021] 10. Wafer temporary storage warehouse IOC;

[0022] 20. First pipeline; 21. First valve (intake valve); 22. Gas source;

[0023] 30. Second pipeline; 31. Second valve; 32. Vacuum pump;

[0024] 40. The third pipeline; 41. The pressure monitoring module; 42. The control valve; 43. The controller. DETAILED DESCRIPTION

[0025] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the embodiments of the present invention are further described in detail below in combination with specific embodiments and with reference to the accompanying drawings.

[0026] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by technicians in the technical field of the present invention; the terms used in this specification are only for the purpose of describing specific embodiments and are not intended to limit the present invention. For example, the directions or positions indicated by terms such as "length", "width", "up", "down", "left", "right", "front", "back", "vertical", "horizontal", "top", "bottom", "inside", and "outside" are based on the directions or positions shown in the drawings, which are only for the convenience of description and cannot be understood as limitations on the present technical solution.

[0027] The terms "including" and "having" and any variations thereof in the specification and claims of the present utility model and the above-mentioned drawings are intended to cover non-exclusive inclusions; the terms "first", "second", etc. in the specification and claims of the present utility model or the above-mentioned drawings are used to distinguish different objects, rather than to describe a specific order. "Multiple" means two or more, unless otherwise clearly and specifically defined.

[0028] In the specification and claims of the utility model and the above-mentioned drawings, when an element is referred to as being "fixed on" or "mounted on" or "disposed on" or "connected to" another element, it may be directly or indirectly located on the other element. For example, when an element is referred to as being "connected to" another element, it may be directly or indirectly connected to the other element.

[0029] In addition, the reference to "embodiment" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiment may be included in at least one embodiment of the present invention. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0030] PECVD is a thin film growth technology at a relatively low temperature, in which plasma is used to activate gas molecules and promote chemical reactions to form a thin film on a substrate. In this process, the wafer is usually placed in a specific reaction chamber for thin film deposition. The machine usually includes a wafer box, an IOC, and a reaction chamber. The robotic arm grabs the wafer from the wafer box and transfers it to the reaction chamber, and further grabs the wafer and temporarily stores it in the IOC.

[0031] Wafer cassettes are containers used to store and transport wafers (i.e. semiconductor chips). Before the PECVD process begins, the wafers are taken out of the cassette and placed in the system for processing. After processing, the wafers are placed back into the cassette for subsequent use or transportation.

[0032] IOC (In-Out Chamber), also known as wafer storage or buffer, is a key component in the PECVD system. Its main function is to temporarily store wafers waiting to enter the reaction chamber for PECVD treatment, and to temporarily store wafers that have completed PECVD treatment and are waiting for further operation. IOC is usually located outside the reaction chamber to ensure that the environment in the reaction chamber is stable during the processing and reduce the impact of the external environment on the wafer.

[0033] The reaction chamber is the core part of the PECVD system, which contains all the equipment and conditions required for PECVD processing. When the wafer is sent into the reaction chamber, the PECVD process will begin to form the required thin film on the surface of the wafer through plasma enhanced chemical vapor deposition technology. The environment in the reaction chamber, such as temperature, pressure, gas composition, etc., is precisely controlled to ensure the stability and consistency of the PECVD process.

[0034] like Figure 1 The figure shows a schematic diagram of an embodiment of an IOC pipeline detection device for a chemical vapor deposition machine provided by the utility model, comprising:

[0035] A first pipeline 20 and a second pipeline 30 connected to a wafer temporary storage chamber (IOC) 10, and a third pipeline 40 connecting the first pipeline 20 and the second pipeline 30, the first pipeline 20 is connected to a gas source 22, a first valve 21 is provided on the first pipeline 20, the second pipeline 30 is connected to a vacuum pump 32, a control valve 42 and a pressure monitoring module 41 are provided on the third pipeline 40, and the control valve 42 and the pressure monitoring module 41 are communicatively connected.

[0036] Furthermore, the first pipeline 20 is an air intake pipeline. In some embodiments, the first valve 21 is a solenoid valve for controlling the on-off of the air intake pipeline. The gas source 22 is a nitrogen gas source. Nitrogen, as an inert gas, does not chemically react with other substances, and thus can effectively remove dirt and impurities inside or outside the machine. The cleaning process is fast and efficient, and can ensure the cleanliness of the inside of the machine.

[0037] Furthermore, the wafer temporary storage chamber 10 includes 6 to 8 wafer placement positions.

[0038] Furthermore, the pressure monitoring module 41 is a pressure sensor, which is used to monitor the pressure changes in the wafer temporary storage chamber 10. The wafer has very strict requirements on the storage environment, including temperature, humidity and pressure. The pressure sensor can monitor and feedback the pressure value in the wafer temporary storage chamber in real time to ensure environmental stability and avoid unnecessary influence on the wafer. In addition, excessive pressure in the wafer temporary storage chamber may cause damage or leakage of the wafer temporary storage chamber, causing damage to the wafer. The pressure sensor can detect pressure abnormalities in time and take corresponding measures through the alarm system or automatic control system, such as reducing pressure or closing the temporary storage chamber to protect the safety of the wafer.

[0039] Furthermore, the device also includes a controller and a display screen, wherein the controller 43 is electrically connected to the control valve 42 and the pressure monitoring module 41 to integrate and control their operation and obtain their operating status and data in real time. The display screen is used to display the valve opening status and the pressure value in the pipeline to facilitate technical personnel to query.

[0040] Furthermore, the device also includes an alarm module, in which a pressure threshold is set, and an automatic alarm function is performed when the pressure reaches the pressure threshold, or when the control valve / solenoid valve is not opened normally and there is an abnormality, an automatic alarm is performed.

[0041] Furthermore, a gas filter is provided at the connection between the first pipeline 20 and the wafer temporary storage chamber. Through the interception effect of the filter element, the gas filter can remove impurities such as particulate matter, smoke, bacteria, viruses, etc. in the gas, thereby improving the purity of the gas.

[0042] Furthermore, a gas flow meter is also provided on the first pipeline 20 .

[0043] Furthermore, the pressure monitoring module 41 and the control valve 42 are also electrically connected to the machine switch. In some embodiments, the pressure monitoring module 41 and the control valve 42 may also be connected to the controller 43, and the controller 43 is further interconnected with the machine to achieve automatic shutdown of the machine in response to abnormal conditions.

[0044] Furthermore, a second valve 31 may be provided on the second pipeline 30 . In some embodiments, the second valve is a solenoid valve and is connected to the controller 43 .

[0045] The method of using the device includes:

[0046] When the wafer temporary storage chamber needs to be evacuated, the valve of the second pipeline is opened, and the vacuum pump is turned on for evacuation. The pressure value in the temporary storage chamber is monitored in real time through the pressure monitoring module to store the wafers in a vacuum environment. When the robotic arm needs to grab the wafer from the wafer temporary storage chamber again, it is necessary to inflate the wafer temporary storage chamber, open the first valve of the first pipeline and the solenoid valve of the second pipeline, and the controller displays that the solenoid valve is working normally, and turn on the gas source for inflation. When the solenoid valve is identified to be working abnormally or the pressure monitoring module detects abnormal pressure, the controller controls the valve to close and alarm, and the linkage machine is shut down. The technician intervenes to check and restarts after it is correct. The device monitors the opening and closing of the pipeline and the pressure condition in the IOC in real time to avoid contamination caused by excessive pressure in the pipeline at the moment of back pressure. When an abnormal condition is detected, the machine can be automatically linked to shut down to achieve real-time detection of the pipeline.

[0047] The above are exemplary embodiments disclosed by the present utility model, but it should be noted that various changes and modifications may be made without departing from the scope of the present utility model embodiments disclosed by the claims. The functions, steps and / or actions of the method claims according to the disclosed embodiments described herein do not need to be performed in any particular order. In addition, although the elements disclosed by the present utility model embodiments may be described or required in individual form, they may also be understood as multiple unless explicitly limited to the singular.

[0048] It should be understood that, as used herein, the singular forms "a", "an" are intended to include the plural forms as well, unless the context clearly supports an exception. It should also be understood that, as used herein, "and / or" refers to any and all possible combinations including one or more of the associated listed items.

[0049] The serial numbers of the embodiments disclosed in the above-mentioned embodiments of the present invention are only for description and do not represent the advantages or disadvantages of the embodiments.

[0050] Those skilled in the art should understand that the discussion of any of the above embodiments is only exemplary and is not intended to imply that the scope of the disclosure of the embodiments of the present invention (including the claims) is limited to these examples; under the concept of the embodiments of the present invention, the technical features in the above embodiments or different embodiments can also be combined, and there are many other changes in different aspects of the above embodiments of the present invention, which are not provided in detail for the sake of simplicity. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the embodiments of the present invention should be included in the protection scope of the embodiments of the present invention.

Claims

1. An IOC pipeline detection device for a chemical vapor deposition machine, characterized in that: include: A first pipeline and a second pipeline connected to the IOC, and a third pipeline connecting the first pipeline and the second pipeline, the first pipeline is connected to the gas source, a first valve is arranged on the first pipeline, the second pipeline is connected to the vacuum pump, a control valve and a pressure monitoring module are arranged on the third pipeline, and the control valve and the pressure monitoring module are communicatively connected.

2. The IOC pipeline detection device for a chemical vapor deposition machine according to claim 1, characterized in that: The first valve is a solenoid valve.

3. The IOC pipeline detection device for a chemical vapor deposition machine according to claim 1, characterized in that: The IOC includes 6 to 8 wafer placement positions.

4. The IOC pipeline detection device for a chemical vapor deposition machine according to claim 1, characterized in that: The pressure monitoring module is a pressure sensor.

5. The IOC pipeline detection device for a chemical vapor deposition machine according to claim 1, characterized in that: The gas source is a nitrogen gas source.

6. The IOC pipeline detection device for a chemical vapor deposition machine according to claim 1, characterized in that: The device also includes a display screen to display the valve opening state and the pressure value in the pipeline.

7. The IOC pipeline detection device for a chemical vapor deposition machine according to claim 1, characterized in that: The device also includes an alarm module.

8. The IOC pipeline detection device for a chemical vapor deposition machine according to claim 1, characterized in that: A gas filter is provided at the connection between the first pipeline and the IOC.

9. The IOC pipeline detection device for a chemical vapor deposition machine according to claim 1, characterized in that: The first pipeline is also provided with a gas flow meter.

10. The IOC pipeline detection device for a chemical vapor deposition machine according to claim 1, characterized in that: The pressure monitoring module and the control valve are also electrically connected to the machine switch.