Heat treatment annealing furnace control device for semiconductor processing and heat treatment annealing furnace

Abstract

The utility model provides a heat treatment annealing furnace control device for semiconductor processing and a heat treatment annealing furnace, and relates to the technical field of annealing furnace control. A temperature acquisition module is installed on each temperature heating module, the system can monitor the actual temperature of a heating area of each temperature heating module in real time, a traditional control device is adopted for temperature control for the first group of temperature heating modules, and an error amplification module and a current driving module are introduced for the subsequent temperature devices, so that the temperature of the heating area of each temperature heating module is controlled. According to the system, the temperature difference between the adjacent temperature devices is accurately controlled, the error amplification module calculates the analog output voltage difference value of the two adjacent temperature detection modules, then the working current of the corresponding temperature heating module is controlled to be directly adjusted by adopting the difference value, and the dynamic response capability of temperature control is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of annealing furnace control, in particular to a heat treatment annealing furnace control device for semiconductor processing and a heat treatment annealing furnace. Background Art

[0002] In the field of semiconductor manufacturing, heat treatment is a crucial process step used to improve the properties of semiconductor materials or change their electrical properties, which is essential to ensure the performance of semiconductor devices. This process requires precisely controlling high temperatures to change or optimize the electrical properties of materials such as silicon wafers. In order to achieve the desired physical and electrical properties, the annealing furnace must maintain a uniform and precise temperature distribution so that each semiconductor device can receive the appropriate amount of heat.

[0003] In the prior art, in order to ensure the uniformity of the annealing furnace temperature, in the prior art, the control method of the heat treatment annealing furnace usually adopts a distributed temperature sensor network combined with advanced control algorithms to manage the temperature in the furnace. These systems will install multiple temperature sensors at different locations in the furnace to monitor the temperature changes in each area in real time, and use control algorithms such as PID algorithm control to maintain the set temperature curve and ensure the temperature uniformity in the entire furnace cavity.

[0004] There are currently two main control methods. One is to collect multiple temperatures and use a control component to control the entire resistance wire for heating. However, different parts of the resistance wire are at different distances from the control component, which results in time required for the heat signal to be transmitted from one end to the other. This delay causes the control component to respond slowly to the temperature at the far end of the resistance wire, resulting in uneven temperature distribution. Another control method is to use segmented control of the resistance wire. Although the accuracy of local temperature control can be improved, each control segment may have its own temperature sensor and controller, and it is difficult to ensure that there is a delay between the sensor readings and controller responses of each control segment, resulting in insufficiently timely temperature adjustments, which will still lead to uneven temperature heating. Utility Model Content

[0005] The utility model aims to provide a heat treatment annealing furnace control device and a heat treatment annealing furnace for semiconductor processing, so as to solve the problems raised in the above-mentioned background technology.

[0006] In order to achieve the above purpose, the utility model provides the following technical solutions:

[0007] A control device for a heat treatment annealing furnace for semiconductor processing, comprising a plurality of groups of temperature devices numbered in sequence, a group of control devices and a temperature regulating device, wherein the number of the temperature regulating devices is one group less than the number of the temperature devices, wherein:

[0008] The temperature device includes a temperature heating module, which is fixed inside the annealing furnace and is used to convert electrical energy into thermal energy to heat the inside of the annealing furnace. A temperature acquisition module is installed on the temperature heating module, which is used to collect the temperature of the surface of the temperature heating module and generate a voltage signal. The temperature acquisition module is electrically connected to the temperature detection module and is used to convert the voltage signal generated by the temperature acquisition module into an analog voltage that is linearly related to the temperature.

[0009] The control device includes an analog-to-digital conversion module, the analog-to-digital conversion module is electrically connected to the temperature detection module of the temperature device numbered as group 1, the analog-to-digital conversion module is electrically connected to the control module, and is used to convert the analog voltage output by the temperature device numbered as group 1 into a digital quantity, and send it to the control module, the control module is electrically connected to the heating drive module, and is used to control the working current of the temperature heating module of the temperature device of group 1 through the heating drive module;

[0010] The temperature devices numbered as other than the first group are all electrically connected to a corresponding group of temperature regulating devices, the temperature regulating devices including an error amplification module, the error amplification module having two input ends, one input end electrically connected to the temperature detection module of the temperature device with the corresponding number, and the other input end connected to the temperature detection module of the temperature device with the previous number, for generating an analog output voltage difference between the two temperature detection modules, the error amplification module being electrically connected to the current driving module, the current driving module being electrically connected to the temperature heating module of the temperature device with the corresponding number, for controlling the temperature heating module according to the analog output voltage difference.

[0011] Furthermore, the temperature heating module adopts a resistance wire heating device, and the temperature acquisition module adopts an S-type thermocouple.

[0012] Further, the temperature detection module includes resistors R11 and R13 connected in series, and resistors R12 and R14 connected in series. After the other ends of the resistors R11 and R12 are electrically connected, they are connected to the reference voltage. The other end of the resistor R12 is electrically connected to the temperature acquisition module. The other end of the resistor R14 is grounded. The connecting ends of the resistors R11 and R13 and the connecting ends of the resistors R12 and R14 are electrically connected to resistors R15 and R16, respectively. The other ends of the resistors R15 and R16 are electrically connected to the positive input and negative input of the operational amplifier U11, respectively. The output of the operational amplifier U11 is the output of the temperature detection module. One end of the resistor R13 is grounded, and the other end is electrically connected to the negative input of the operational amplifier U11. A resistor R18 is connected between the positive input and output of the operational amplifier U11, and the resistor R18 and the capacitor C11 are connected in parallel.

[0013] Furthermore, the error amplification module includes resistors R21 and R23 connected in series, the other end of the resistor R23 is electrically connected to the negative input terminal of the operational amplifier U21, one end of the resistor R22 is grounded, and the other end is electrically connected to the connection point of the resistors R21 and R23, one end of the resistor R24 ​​is grounded, and the other end is connected to the negative input terminal of the operational amplifier U21, the positive input terminal of the operational amplifier U21 is electrically connected to the resistor R25, the two ends of the resistor R26 are respectively electrically connected to the positive input terminal and the output terminal of the operational amplifier U21, the output terminal of the operational amplifier U21 is the output of the error amplification module, the other end of the resistor R25 is electrically connected to the temperature detection module of the temperature device with the corresponding number, and the other end of the resistor R21 is electrically connected to the temperature detection module of the temperature device with the previous number.

[0014] Furthermore, the current driving module adopts a thyristor, the gate of the thyristor is electrically connected to the output end of the error amplification module, and the anode and cathode of the thyristor are connected in series in the power supply circuit of the temperature heating module.

[0015] Furthermore, the heating drive module adopts an H-bridge circuit, the two diagonal ends of the H-bridge circuit are electrically connected to the temperature heating module, the other two ends of the H-bridge circuit are electrically connected to an external power supply, and the control end of the H-bridge circuit is electrically connected to the control module.

[0016] The utility model further provides a heat treatment annealing furnace for semiconductor processing, wherein the heat treatment annealing furnace comprises a furnace body and the above-mentioned heat treatment annealing furnace control device for semiconductor processing, and the temperature heating module is installed inside the furnace body.

[0017] Compared with the prior art, the beneficial effects of the utility model are:

[0018] The utility model adopts a combination of multiple groups of temperature devices and temperature adjustment devices. The temperature device divides the heating area into multiple areas. By installing a temperature acquisition module on each temperature heating module, the system can monitor the actual temperature of the heating area of ​​each temperature heating module in real time, and convert this information into an analog voltage signal. For the first group of temperature heating modules, a traditional control device is used to control the temperature, which can shorten the response time of the actuator, i.e., the resistance wire. For the subsequent temperature devices, the system realizes accurate control of the temperature difference between adjacent temperature devices by introducing an error amplification module and a current driving module. The error amplification module calculates the analog output voltage difference of two adjacent temperature detection modules, and adjusts the current driving module according to the difference, thereby controlling the working current of the corresponding temperature heating module. The control device is removed, and the difference is directly used for adjustment, which improves the dynamic response capability of the temperature control, so that the annealing furnace can quickly adjust and maintain a stable temperature environment, thereby improving the quality and efficiency of semiconductor processing.

[0019] The utility model adopts a traditional control device to adjust the first group of multiple temperature devices, and each subsequent group is adjusted according to the temperature difference with the previous group. Instead of setting a control device for each temperature device to adjust it separately, the adjustment of each temperature device is connected in series through the temperature difference, which can overcome the problem of inconsistent response of each control device, improve the dynamic response capability of temperature control, and ensure the uniformity of the internal temperature of the annealing furnace. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 This is a schematic diagram of the overall system structure of the utility model;

[0021] Figure 2 This is a schematic diagram of the circuit structure of the temperature detection module in the utility model;

[0022] Figure 3 This is a schematic diagram of the circuit structure of the error amplification module in the utility model;

[0023] Figure 4 This is a schematic diagram of the connection circuit structure of the error amplification module and the current driving module in the utility model;

[0024] Figure 5 This is a schematic diagram of the principle structure of the error amplification module in the utility model.

[0025] In the figure: a temperature device 10, a temperature heating module 11, a temperature acquisition module 12, a temperature detection module 13, a control device 20, an analog-to-digital conversion module 21, a control module 22, a heating drive module 23, a temperature adjustment device 30, an error amplification module 31, and a current drive module 32. DETAILED DESCRIPTION

[0026] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0027] Example:

[0028] See also Figures 1 to 5 , the utility model provides a technical solution:

[0029] A control device for a heat treatment annealing furnace for semiconductor processing, comprising a plurality of groups of temperature devices 10 numbered in sequence, a group of control devices 20 and temperature adjustment devices 30, wherein the number of the temperature adjustment devices 30 is one group less than the number of the temperature devices 10, wherein:

[0030] In this embodiment, the temperature device 10 is used in at least 5 groups. If the temperature device 10 is provided with n groups, then the temperature adjustment device 30 is provided with n-1 groups.

[0031] The temperature device 10 includes a temperature heating module 11, which is fixed inside the annealing furnace and is used to convert electrical energy into thermal energy to heat the inside of the annealing furnace. A temperature acquisition module 12 is installed on the temperature heating module 11, and the temperature acquisition module 12 is used to collect the temperature of the surface of the temperature heating module 11 and generate a voltage signal. The temperature acquisition module 12 is electrically connected to the temperature detection module 13, and is used to convert the voltage signal generated by the temperature acquisition module 12 into an analog voltage that is linearly related to the temperature.

[0032] In this embodiment, the temperature heating module 11 adopts a resistance wire heating device, the temperature acquisition module 12 adopts an S-type thermocouple, and the operational amplifier U11 and the operational amplifier U21 both adopt the model OPA4188, which is a 4-channel 0.03μV / ℃ drift, low noise, rail-to-rail output, and zero drift operational amplifier.

[0033] The temperature detection module 13 includes resistors R11 and R13 connected in series, and resistors R12 and R14 connected in series. After the other ends of the resistors R11 and R12 are electrically connected, they are connected to the reference voltage. The other end of the resistor R12 is electrically connected to the temperature acquisition module 12, and the other end of the resistor R14 is grounded. The connecting ends of the resistors R11 and R13 and the connecting ends of the resistors R12 and R14 are electrically connected to resistors R15 and R16 respectively. The other ends of the resistors R15 and R16 are electrically connected to the positive input and negative input of the operational amplifier U11 respectively. The output end of the operational amplifier U11 is the output end of the temperature detection module 13. One end of the resistor R13 is grounded, and the other end is electrically connected to the negative input of the operational amplifier U11. A resistor R18 is connected between the positive input and output of the operational amplifier U11, and the resistor R18 and the capacitor C11 are connected in parallel.

[0034] In this embodiment, the temperature detection module 13 is a temperature detection and amplification circuit, which is used to convert the temperature signal collected by the thermocouple into an analog voltage signal and amplify it through an operational amplifier to facilitate subsequent control and processing. The temperature heating module 11 uses a resistance wire heating device to convert electrical energy into thermal energy to heat the inside of the annealing furnace.

[0035] The temperature acquisition module 12 uses an S-type thermocouple to collect the temperature of the surface of the temperature heating module 11 and generate a voltage signal proportional to the temperature. The working principle of the thermocouple is based on the thermoelectric potential difference generated by the contact point of two different metals at different temperatures. Resistors R11 and R13 are connected in series for voltage division. The reference voltage is divided and input to the positive input terminal of the operational amplifier U11. Resistors R12 and R14 are connected in series, and the other end of resistor R12 is connected to the temperature acquisition module 12 for introducing the output voltage of the thermocouple into the circuit. Resistor R14 is grounded to form a reference point. Resistors R15 and R16 are respectively connected to the positive input terminal and negative input terminal of the operational amplifier U11 for adjusting the input impedance and balancing the circuit.

[0036] Operational amplifier U11 is used to amplify the weak voltage signal generated by the thermocouple and convert it into an analog voltage output that is linearly related to the temperature. Resistor R18 and capacitor C11 are connected in parallel between the positive input and output of the operational amplifier to form a feedback network for stabilizing the gain and frequency response of the amplifier. The reference voltage is used to provide a stable voltage reference for comparison with the temperature-related voltage signal generated by the thermocouple. This comparison process is achieved through the resistor divider network resistors R11, R13, R12 and R14, where resistors R11 and R13 are used to divide the reference voltage, while resistors R12 and R14 are used to introduce the output voltage of the thermocouple into the circuit.

[0037] The reference voltage is divided by resistors R11 and R13 and provided to the positive input terminal of the operational amplifier U11. At the same time, the output voltage of the thermocouple is introduced through resistor R12 and compared with the reference voltage in the operational amplifier U11. This comparison is achieved through the differential amplification function of the operational amplifier, where the positive input terminal of the operational amplifier receives the divided voltage signal of the reference voltage, and the negative input terminal receives the output voltage of the thermocouple.

[0038] The working principle of the temperature detection module 13 is that the temperature signal collected by the thermocouple is introduced into the circuit through the resistor R12, and is compared and amplified in the operational amplifier U11 with the signal after the reference voltage is divided by the resistors R11 and R13. The output end of the operational amplifier U11 provides an amplified analog voltage signal, which is proportional to the temperature inside the annealing furnace and can be used for temperature feedback of the control system.

[0039] The control device 20 includes an analog-to-digital conversion module 21, which is electrically connected to the temperature detection module 13 of the temperature device 10 numbered as the first group. The analog-to-digital conversion module 21 is electrically connected to the control module 22, and is used to convert the analog voltage output by the temperature device 10 numbered as the first group into a digital quantity and send it to the control module 22. The control module 22 is electrically connected to the heating drive module 23, and is used to control the operating current of the temperature heating module 11 of the temperature device 10 of the first group through the heating drive module 23.

[0040] In this embodiment, the heating drive module 23 adopts an H-bridge circuit, the two diagonal ends of the H-bridge circuit are electrically connected to the temperature heating module 11, the other two ends of the H-bridge circuit are electrically connected to an external power supply, and the control end of the H-bridge circuit is electrically connected to the control module 22.

[0041] In this embodiment, in the control device 20, the analog-to-digital conversion module 21, the control module 22 and the heating drive module 23 work together to achieve precise control of the first group of temperature heating modules 11. The function of the analog-to-digital conversion module 21 is to convert the analog voltage signal output by the temperature detection module 13 into a digital signal, and convert the continuous analog voltage into discrete digital values ​​through sampling and quantization processes. These digital values ​​are then sent to the control module 22 for further processing. The model used by the analog-to-digital conversion module 21 is ADS1115.

[0042] The control module 22 adopts an STM32 series microcontroller, which receives digital temperature data from the analog-to-digital conversion module 21. The control module 22 calculates the required control action based on the difference between the preset temperature setting value and the actual measured temperature value. The calculated control signal is then sent to the heating drive module 23 to adjust the operating current of the temperature heating module 11.

[0043] The H-bridge circuit is a commonly used electronic circuit used to control the direction and speed of a DC motor, and can also be used to control the power of a heating element. In the H-bridge circuit, four MOSFETs are arranged in an "H" shape as switches, with two diagonal ends connected to the temperature heating module 11 and the other two ends connected to the power supply. The control module 22 controls which switches are turned on or off by controlling the control end of the H-bridge circuit, that is, the base or gate of the switch. By alternately turning on and off different switch combinations, the H-bridge circuit can achieve forward and reverse current control of the temperature heating module 11, thereby adjusting the heating power. If the temperature needs to be increased, the control module can command the H-bridge circuit to provide more current to the temperature heating module 11, and if the temperature needs to be lowered, the current is reduced or completely cut off. Through the combination of digital control and the H-bridge circuit, efficient and responsive temperature regulation of the first group of temperature devices 10 can be achieved.

[0044] The temperature devices 10 numbered as other than the first group are all electrically connected to a corresponding group of temperature regulating devices 30, the temperature regulating devices 30 include an error amplification module 31, the error amplification module 31 has two input ends, one input end is electrically connected to the temperature detection module 13 of the temperature device 10 with the corresponding number, and the other input end is connected to the temperature detection module 13 of the temperature device 10 with the previous number, and is used to generate an analog output voltage difference between the two temperature detection modules 13, the error amplification module 31 is electrically connected to the current driving module 32, and the current driving module 32 is electrically connected to the temperature heating module 11 of the temperature device 10 with the corresponding number, and is used to control the temperature heating module 11 according to the analog output voltage difference.

[0045] The error amplification module 31 includes resistors R21 and R23 connected in series, the other end of the resistor R23 is electrically connected to the negative input terminal of the operational amplifier U21, one end of the resistor R22 is grounded, and the other end is electrically connected to the connection point of the resistors R21 and R23, one end of the resistor R24 ​​is grounded, and the other end is connected to the negative input terminal of the operational amplifier U21, the positive input terminal of the operational amplifier U21 is electrically connected to the resistor R25, the two ends of the resistor R26 are electrically connected to the positive input terminal and the output terminal of the operational amplifier U21 respectively, the output terminal of the operational amplifier U21 is the output of the error amplification module 31, the other end of the resistor R25 is electrically connected to the temperature detection module 13 of the temperature device 10 with the corresponding number, and the other end of the resistor R21 is electrically connected to the temperature detection module 13 of the temperature device 10 with the previous number.

[0046] The error amplification module 31 is used to amplify the voltage difference between the outputs of the two previous temperature devices 10 and the corresponding temperature device 10, and uses the output of the previous temperature device 10 as a reference, and controls the temperature heating module 11 according to the amplified voltage difference to achieve temperature adjustment of the corresponding numbered temperature device 10. The error amplification module 31 receives the analog output voltage from the temperature detection module 13 of the current temperature device 10 and the previous temperature device 10. Through these two voltages, an analog voltage difference representing the temperature difference between two temperature points is generated. The error amplification module 31 uses an operational amplifier U21 and the surrounding resistor network R21, R22, R23, R24, R25, R26 to amplify this voltage difference. The amplification factor is determined by the ratio of the resistors R21, R22, R23 and R24, which can amplify the small voltage difference between the two temperature detection modules 13 and suppress common mode noise at the same time.

[0047] The amplified voltage difference signal is sent to the current driving module 32, which adjusts the output current according to the received voltage difference signal to control the working state of the temperature heating module 11. If the amplified voltage difference indicates that the current temperature is lower than the temperature of the previous group of temperature devices 10, the current driving module 32 will increase the output current to make the temperature heating module 11 work more strongly, thereby increasing the temperature. On the contrary, if the temperature is higher than the temperature of the previous group of temperature devices 10, the current will decrease, reducing the heating power, and can effectively adjust and maintain the temperature of the corresponding temperature device 10 within the required range according to the temperature of the previous temperature device 10.

[0048] Furthermore, the current driving module 32 uses a thyristor, the gate of the thyristor is electrically connected to the output end of the error amplification module 31 , and the anode and cathode of the thyristor are connected in series in the power supply circuit of the temperature heating module 11 .

[0049] The current driving module 32 uses thyristors to control the power supply of the heating module 11 to adjust the temperature. Thyristors are semiconductor devices. The model of thyristors (SCR) is BT151-500R, which has three pins: anode, cathode and gate. Its working principle is based on controlling the voltage of the gate to control the current flow from the anode to the cathode. The output end of the error amplification module 31 is connected to the gate of the thyristor. When the error amplification module 31 outputs a certain voltage, this voltage activates the gate of the thyristor, so that the thyristor is switched from the cut-off state to the on state, allowing current to flow from the anode to the cathode.

[0050] The anode and cathode of the thyristor are respectively connected in series in the power supply circuit of the temperature heating module 11. When the thyristor is turned on, the circuit is closed, the heating module 11 is powered and starts heating. When the output voltage of the error amplification module 31 is not enough to maintain the activation of the thyristor gate, the thyristor is turned off, the power supply of the heating module is cut off, and the heating stops.

[0051] When the system needs to be heated, the temperature difference detected by the error amplification module 31 is processed and then outputs a certain voltage to the gate of the thyristor, turning on the thyristor. Current flows to the heating module and the heating process begins. As the temperature rises, the value detected by the temperature detection module 13 changes accordingly, causing the output voltage of the error amplification module 31 to decrease. When this voltage is not enough to keep the thyristor gate activated, the thyristor is turned off and the heating stops. In this way, by controlling the conduction and closing of the thyristor, precise temperature regulation is achieved.

[0052] In this embodiment, by adopting a combination of multiple groups of temperature devices 10 and temperature adjustment devices 30, the temperature device 10 divides the heating area into multiple areas. By installing a temperature acquisition module 12 on each temperature heating module 11, the system can monitor the actual temperature of the heating area of ​​each temperature heating module 11 in real time, and convert this information into an analog voltage signal. For the first group of temperature heating modules 11, a traditional control device 20 is used to perform temperature control, which can shorten the response time of the actuator, i.e., the resistance wire. For the subsequent temperature devices 10, by introducing an error amplification module 31 and a current driving module 32, the system realizes precise control of the temperature difference between adjacent temperature devices 10. The error amplification module 31 calculates the analog output voltage difference of two adjacent temperature detection modules 13, and adjusts the current driving module 32 according to the difference, thereby controlling the working current of the corresponding temperature heating module 11. The control device 20 is removed, and the difference is directly used for adjustment, which improves the dynamic response capability of the temperature control, so that the annealing furnace can quickly adjust and maintain a stable temperature environment, thereby improving the quality and efficiency of semiconductor processing;

[0053] In this embodiment, for multiple groups of temperature devices 10, the first group is adjusted by a traditional control device 20, and each subsequent group is adjusted by the temperature difference with the previous group. Instead of setting a control device 20 for each temperature device 10 to adjust it separately, the adjustment of each temperature device 10 is connected in series by the temperature difference, which can overcome the problem of inconsistent response of each control device 10, improve the dynamic response capability of temperature control, and ensure the uniform internal temperature of the annealing furnace.

[0054] The utility model further provides a heat treatment annealing furnace for semiconductor processing, wherein the heat treatment annealing furnace comprises a furnace body and the above-mentioned heat treatment annealing furnace control device for semiconductor processing, and the temperature heating module 11 is installed inside the furnace body.

[0055] Although the embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A control device for a heat treatment annealing furnace for semiconductor processing, comprising a plurality of groups of temperature devices (10) numbered in sequence, a group of control devices (20) and a temperature adjustment device (30), wherein the number of the temperature adjustment devices (30) is one group less than the number of the temperature devices (10), characterized in that: The temperature device (10) comprises a temperature heating module (11), the temperature heating module (11) is fixed inside the annealing furnace and is used to convert electrical energy into thermal energy to heat the inside of the annealing furnace; a temperature acquisition module (12) is installed on the temperature heating module (11), the temperature acquisition module (12) is used to acquire the temperature of the surface of the temperature heating module (11) and generate a voltage signal; the temperature acquisition module (12) and the temperature detection module (13) are electrically connected and are used to convert the voltage signal generated by the temperature acquisition module (12) into an analog voltage that is linearly related to the temperature; The control device (20) comprises an analog-to-digital conversion module (21), the analog-to-digital conversion module (21) being electrically connected to a temperature detection module (13) of a temperature device (10) of the first group, the analog-to-digital conversion module (21) being electrically connected to a control module (22) for converting an analog voltage output by the temperature device (10) of the first group into a digital quantity and sending the digital quantity to the control module (22), the control module (22) being electrically connected to a heating drive module (23) for controlling the operating current of the temperature heating module (11) of the temperature device (10) of the first group through the heating drive module (23); The temperature devices (10) numbered as other than the first group are all electrically connected to a corresponding group of temperature regulating devices (30), the temperature regulating devices (30) comprising an error amplification module (31), the error amplification module (31) having two input ends, one input end electrically connected to a temperature detection module (13) of a temperature device (10) with a corresponding number, and the other input end connected to a temperature detection module (13) of a temperature device (10) with a previous number, for generating an analog output voltage difference between the two temperature detection modules (13), the error amplification module (31) being electrically connected to a current driving module (32), and the current driving module (32) being electrically connected to a temperature heating module (11) of a temperature device (10) with a corresponding number, for controlling the temperature heating module (11) according to the analog output voltage difference.

2. A semiconductor processing heat treatment annealing furnace control device according to claim 1, characterized in that: The temperature heating module (11) adopts a resistance wire heating device, and the temperature collection module (12) adopts an S-type thermocouple.

3. A semiconductor processing heat treatment annealing furnace control device according to claim 2, characterized in that: The temperature detection module (13) comprises resistors R11 and R13 connected in series, and resistors R12 and R14 connected in series. After the other ends of the resistors R11 and R12 are electrically connected, they are connected to a reference voltage. The other end of the resistor R12 is electrically connected to the temperature acquisition module (12). The other end of the resistor R14 is grounded. The connection ends of the resistors R11 and R13 and the connection ends of the resistors R12 and R14 are electrically connected to resistors R15 and R16 respectively. The other ends of the resistors R15 and R16 are electrically connected to the positive input end and the negative input end of the operational amplifier U11 respectively. The output end of the operational amplifier U11 is the output end of the temperature detection module (13). One end of the resistor R13 is grounded, and the other end is electrically connected to the negative input end of the operational amplifier U11. A resistor R18 is connected between the positive input end and the output end of the operational amplifier U11. The resistor R18 and the capacitor C11 are connected in parallel.

4. A semiconductor processing heat treatment annealing furnace control device according to claim 3, characterized in that: The error amplification module (31) comprises resistors R21 and R23 connected in series, the other end of the resistor R23 is electrically connected to the negative input end of the operational amplifier U21, one end of the resistor R22 is grounded, and the other end is electrically connected to the connection point of the resistors R21 and R23, one end of the resistor R24 ​​is grounded, and the other end is connected to the negative input end of the operational amplifier U21, the positive input end of the operational amplifier U21 is electrically connected to the resistor R25, the two ends of the resistor R26 are respectively electrically connected to the positive input end and the output end of the operational amplifier U21, the output end of the operational amplifier U21 is the output of the error amplification module (31), the other end of the resistor R25 is electrically connected to the temperature detection module (13) of the corresponding numbered temperature device (10), and the other end of the resistor R21 is electrically connected to the temperature detection module (13) of the previously numbered temperature device (10).

5. A semiconductor processing heat treatment annealing furnace control device according to claim 4, characterized in that: The current driving module (32) uses a thyristor, the gate of the thyristor is electrically connected to the output end of the error amplification module (31), and the anode and cathode of the thyristor are connected in series in the power supply circuit of the temperature heating module (11).

6. A semiconductor processing heat treatment annealing furnace control device according to claim 1, characterized in that: The heating drive module (23) adopts an H-bridge circuit, the two diagonal ends of the H-bridge circuit are electrically connected to the temperature heating module (11), the other two ends of the H-bridge circuit are electrically connected to an external power supply, and the control end of the H-bridge circuit is electrically connected to the control module (22).

7. A heat treatment annealing furnace for semiconductor processing, characterized in that: The heat treatment annealing furnace comprises a furnace body and a heat treatment annealing furnace control device for semiconductor processing according to any one of claims 1 to 6, and the temperature heating module (11) is installed inside the furnace body.

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