Wafer temperature detection device in ion implantation process

Abstract

The utility model provides a wafer temperature detection device in an ion implantation process, which comprises a process cavity structure, and the process cavity structure comprises a cavity wall composed of a cavity side wall, a cavity bottom and a cavity top. The wafer tray is used for carrying, cooling and heating the wafer during ion implantation; the Faraday cup is used for measuring the current magnitude, direction and waveform of the ion beam; the plasma electronic spraying device is used for neutralizing the ion beam; and the infrared radiation temperature detectors are respectively arranged on the top of the cavity and above the wafer tray, and on the side wall of the cavity and at the position of the ion beam path, and are used for detecting the temperature of the wafer. According to the utility model, the wafer temperature in the low-temperature and high-temperature ion implantation process can be directly detected, and the ion implantation process temperature can be accurately controlled.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, in particular to a wafer temperature detection device in an ion implantation process. Background Art

[0002] The ion implantation process uses low or high temperature conditions to implant to achieve specific purposes or functions. For example, low temperature implantation will form an amorphous layer, thereby reducing end-of-range defects and increasing the ion activation rate. High temperature implantation will reduce implantation damage, thereby reducing defects and leakage. Low-temperature or high-temperature implantation of ion implantation is usually achieved by cooling or heating the wafer using a low-temperature or high-temperature wafer tray, and generally includes a pre-cooling or pre-heating process. Before low-temperature or high-temperature implantation, the temperature of the wafer tray is usually detected after waiting for a certain period of time. If the temperature of the wafer tray reaches the set value, the ion implantation process is performed; during the ion implantation process, the temperature stability of the process is also fed back by detecting the temperature of the wafer tray. This method is usually an indirect temperature detection method and cannot effectively detect the temperature of the implantation process.

[0003] In order to solve the above problems, it is necessary to propose a new type of wafer temperature detection device for the ion implantation process. Utility Model Content

[0004] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a wafer temperature detection device for an ion implantation process, so as to solve the problem that the indirect temperature detection method in the prior art cannot effectively detect the temperature of the implantation process.

[0005] In order to achieve the above-mentioned purpose and other related purposes, the utility model provides a wafer temperature detection device for an ion implantation process, comprising:

[0006] A process chamber structure, the process chamber structure comprising:

[0007] A cavity wall composed of a cavity side wall, a cavity bottom and a cavity top;

[0008] Wafer trays, which are used to carry, cool and heat wafers for ion implantation;

[0009] Faraday cup, which is used to measure the current size, direction and waveform of the ion beam;

[0010] Plasma electron shower device, used to neutralize ion beam;

[0011] Infrared radiation temperature detectors are respectively arranged on the top of the chamber and located above the wafer tray, and on the side wall of the chamber and located on the ion beam path, for detecting the temperature of the wafer.

[0012] Preferably, the bottom of the wafer tray has a pipeline for cooling with a coolant; or the bottom has a thermocouple for heating.

[0013] Preferably, the cooling liquid is liquid nitrogen.

[0014] Preferably, the Faraday cup is located on a side wall of the cavity, and a plurality of the Faraday cups are respectively arranged on the side and bottom of the wafer tray.

[0015] Preferably, the infrared radiation temperature detector comprises an optical system, a photoelectric detector, a signal processing unit and a display unit, and the optical system, the photoelectric detector, the signal processing unit and the display unit are connected in sequence.

[0016] Preferably, the infrared radiation temperature detector is disposed on the top of the cavity and located directly above the wafer tray, and is used to detect the temperature of the wafer placed on the wafer tray.

[0017] Preferably, the infrared radiation temperature detector is located on the same side wall of the cavity as the Faraday cup, and is used to detect the temperature during the wafer implantation process.

[0018] Preferably, the number of the infrared radiation temperature detectors is multiple.

[0019] Preferably, the detection device also includes a controller, which is used to obtain measurement data from the infrared radiation temperature detector. When the temperature of the wafer is consistent with the set value, the ion implantation process is executed or continued. Otherwise, the ion implantation process is stopped until the temperature reaches the set value.

[0020] As described above, the wafer temperature detection device for the ion implantation process of the utility model has the following beneficial effects:

[0021] The utility model can directly detect the wafer temperature during the low-temperature and high-temperature ion implantation processes and accurately control the ion implantation process temperature. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 Shown is a schematic cross-sectional view of the structure of the temperature detection device of the present invention. DETAILED DESCRIPTION

[0023] The following is an explanation of the implementation of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific implementations, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0024] See also Figure 1 The utility model provides a wafer temperature detection device for an ion implantation process, comprising:

[0025] Process chamber structure, the process chamber structure includes:

[0026] A cavity wall (not shown) consisting of a cavity side wall 101, a cavity bottom and a cavity top;

[0027] Wafer tray 102, which is used for carrying, cooling and heating wafers for ion implantation;

[0028] In some optional embodiments, the bottom of the wafer tray 102 has a pipeline for cooling with a coolant; or the bottom has a thermocouple for heating.

[0029] In some optional embodiments, the cooling liquid is liquid nitrogen.

[0030] A Faraday cup 103, which is used to measure the current size, direction and waveform of the ion beam;

[0031] In some optional embodiments, the Faraday cup 103 is located on the cavity sidewall 101 , and a plurality of Faraday cups 103 are disposed on the side and bottom of the wafer tray 102 .

[0032] A plasma electron shower device 104 for neutralizing the ion beam;

[0033] The infrared radiation temperature detector 105 is respectively arranged on the top of the cavity and above the wafer tray 102, and on the side wall 101 of the cavity and located in the ion beam path, and is used to detect the temperature of the wafer and can also detect the temperature of the ion beam, thereby directly detecting the temperature of the wafer during ion implantation.

[0034] In some optional embodiments, the infrared radiation temperature detector 105 includes an optical system, a photoelectric detector, a signal processing unit and a display unit, and the optical system, the photoelectric detector, the signal processing unit and the display unit are connected in sequence.

[0035] In some optional embodiments, the infrared radiation temperature detector 105 is disposed on the top of the cavity and directly above the wafer tray 102 , and is used to detect the temperature of the wafer placed on the wafer tray 102 .

[0036] In some optional embodiments, the infrared radiation temperature detector 105 is located on the same cavity sidewall 101 as the Faraday cup 103 and is used to detect the temperature during the wafer implantation process.

[0037] In some optional embodiments, there are multiple infrared radiation temperature detectors 105, and using multiple infrared radiation temperature detectors 105 can improve detection accuracy.

[0038] In some optional embodiments, the detection device also includes a controller, which is used to obtain measurement data from the infrared radiation temperature detector 105. When the temperature of the wafer is consistent with the set value, the ion implantation process is executed or continued. Otherwise, the ion implantation process is stopped until the temperature reaches the set value.

[0039] For example, an embodiment of the present application further provides a controller, including:

[0040] Memory, used to store computer programs;

[0041] The processor is used to implement the steps of the above-mentioned mobile application debugging method when executing the program stored in the memory.

[0042] Furthermore, the electronic device may further include a communication bus and / or a communication interface, and the processor, the communication interface, and the memory communicate with each other via the communication bus.

[0043] The communication bus mentioned in the above electronic device can be a Peripheral Component Interconnect (PCI) bus or an Extended Industry Standard Architecture (EISA) bus, etc. The communication bus can be divided into an address bus, a data bus, a control bus, etc. The communication interface is used for communication between the above electronic device and other devices.

[0044] The memory may include a random access memory (RAM) or a non-volatile memory (NVM), such as at least one disk memory. Optionally, the memory may also be at least one storage device located away from the aforementioned processor.

[0045] The above-mentioned processor can be a general-purpose processor, including a central processing unit (CPU), a network processor (NP), etc.; it can also be a digital signal processor (DSP), an application specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components.

[0046] It should be noted that the illustrations provided in this embodiment are only used to schematically illustrate the basic concept of the present invention. Therefore, the drawings only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0047] In summary, the utility model can directly detect the wafer temperature during low-temperature and high-temperature ion implantation processes and accurately control the ion implantation process temperature. Therefore, the utility model effectively overcomes various shortcomings of the prior art and has a high industrial utilization value.

[0048] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the technology may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed in the present invention shall still be covered by the claims of the present invention.

Claims

1. A wafer temperature detection device for an ion implantation process, characterized in that: include: A process chamber structure, the process chamber structure comprising: A cavity wall composed of a cavity side wall, a cavity bottom and a cavity top; Wafer trays, which are used to carry, cool and heat wafers for ion implantation; Faraday cup, which is used to measure the current size, direction and waveform of the ion beam; Plasma electron shower device, used to neutralize ion beam; Infrared radiation temperature detectors are respectively arranged on the top of the chamber and located above the wafer tray, and on the side wall of the chamber and located on the ion beam path, for detecting the temperature of the wafer.

2. The wafer temperature detection device for ion implantation process according to claim 1, characterized in that: The bottom of the wafer tray is provided with a pipeline for cooling by a coolant; or the bottom is provided with a thermocouple for heating.

3. The wafer temperature detection device for ion implantation process according to claim 2, characterized in that: The cooling liquid is liquid nitrogen.

4. The wafer temperature detection device for ion implantation process according to claim 1, characterized in that: The Faraday cup is located on the side wall of the cavity, and a plurality of the Faraday cups are respectively arranged on the side and bottom of the wafer tray.

5. The wafer temperature detection device for ion implantation process according to claim 1, characterized in that: The infrared radiation temperature detector comprises an optical system, a photoelectric detector, a signal processing unit and a display unit, and the optical system, the photoelectric detector, the signal processing unit and the display unit are connected in sequence.

6. The wafer temperature detection device for ion implantation process according to claim 1, characterized in that: The infrared radiation temperature detector is arranged on the top of the cavity and located directly above the wafer tray, and is used to detect the temperature of the wafer placed on the wafer tray.

7. The wafer temperature detection device for ion implantation process according to claim 1, characterized in that: The infrared radiation temperature detector is located on the same side wall of the cavity as the Faraday cup and is used to detect the temperature during the wafer implantation process.

8. The wafer temperature detection device for ion implantation process according to claim 1, characterized in that: The infrared radiation temperature detectors are provided in multiple quantities.

9. The wafer temperature detection device for ion implantation process according to claim 1, characterized in that: The detection device also includes a controller, which is used to obtain measurement data from the infrared radiation temperature detector. When the temperature of the wafer is consistent with the set value, the ion implantation process is executed or continued. Otherwise, the ion implantation process is stopped until the temperature reaches the set value.

Images