POWER MODULE AND POWER CONVERTER UNIT

The power module design addresses high thermal resistance and reliability issues by using a sintered connecting element with improved heat dissipation and stress management, enhancing the module's performance and longevity.

DE112019008007B4Active Publication Date: 2026-05-28MITSUBISHI ELECTRIC CORP
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Patent Information

Application Number
DE112019008007
Authority / Receiving Office
DE · DE
Patent Type
Patents
Current Assignee / Owner
Filing Date
2019-12-26
Publication Date
2026-05-28
Estimated Expiration
2039-12-26

AI Technical Summary

Technical Problem

Existing power modules suffer from high thermal resistance and reliability issues due to insufficient heat distribution from the semiconductor unit, primarily because the solder used for connecting the semiconductor unit to a larger metal plate contributes to thermal resistance, leading to deteriorated module reliability.

Method used

A power module design featuring a sintered connecting element with a larger outer circumference than the semiconductor unit, which improves heat dissipation by distributing heat laterally and reducing stress concentration, using materials like silver or copper metal particles with porosity between 30% and 50% to enhance thermal conductivity and adhesion.

Benefits of technology

The design enhances heat dissipation from the semiconductor unit, increasing the reliability of the power module by preventing crack propagation and improving the adhesion of the sealing element, thus extending the service life of the bonding wires and the module as a whole.

✦ Generated by Eureka AI based on patent content.

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Abstract

Power module, which includes the following: - at least one semiconductor unit (1); - an insulating substrate (11, 31) comprising an insulating layer (5), a circuit layer (3, 4) arranged on an upper surface of the insulating layer (5), and a metal layer (6, 7) arranged on a lower surface of the insulating layer (5); - a sintered connecting element (2) with an upper surface area which is larger in relation to an outer circumference than a rear surface of the at least one semiconductor unit (1) to connect the rear surface of the at least one semiconductor unit (1) and an upper surface of the circuit layer (3, 4) on the side of an upper surface of the insulating layer (5); - a base plate (8) connected to the lower surface of the insulating substrate (11, 31); and - a wiring element (10, 15) connected to a front surface of the at least one semiconductor unit (1), wherein the elastic moduli of the elements increase in the following order: the at least one semiconductor unit (1); a structure in which the base plate (8) and the insulating substrate (11, 31) are connected to each other; the wiring element (10, 15); and the sintered connecting element (2).
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Citation Information

Patent Citations

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