Silicon ingot
A silicon ingot with a unidirectionally solidified structure and high coincidence grain boundary ratio addresses the issue of preferential corrosion in semiconductor manufacturing, enhancing corrosion resistance and extending the lifespan of components.
Patent Information
- Application Number
- PCT/JP2025/013330
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-04-03
- Filing Date
- 2025-04-01
- Publication Date
- 2025-10-09
AI Technical Summary
Existing silicon ingots with grain boundaries are prone to preferential corrosion in corrosive environments, leading to potential cracks and particle generation, which is a concern in plasma processing apparatuses used in semiconductor manufacturing.
A silicon ingot with a unidirectionally solidified structure featuring a single crystal region at the center and a coincidence grain boundary region on the periphery, where the ratio of coincidence grain boundary length to total grain boundary length is 80% or more, suppressing preferential corrosion and extending the lifespan.
The silicon ingot effectively reduces grain boundary length and enhances corrosion resistance, ensuring a longer service life in corrosive environments by minimizing localized corrosion.