Solid-state imaging devices and electronic information equipment

A solid-state imaging element and semiconductor technology, which is applied in the direction of electric solid-state devices, electrical components, semiconductor devices, etc., can solve the problem of not being able to effectively suppress color mixing, and achieve the effects of suppressing color mixing, high light-receiving sensitivity, and high light-receiving sensitivity

CN102280460AInactive Publication Date: 2011-12-14SHARP KK
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Publication Date
2011-12-14
Estimated Expiration
Not applicable · inactive patent

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Abstract

The present invention relates to a solid-state imaging element and electronic information equipment. In order to receive correct signals in the light receiving part, color mixing is suppressed more effectively. A grid-shaped light-shielding wall (8) is set in the pixel boundary part of the boundary part of the color filter (5a, 5b), so that the height between the microlens (7) and the semiconductor substrate (2) is reduced, and then the light-shielding wall (8) (or reflective wall) height is set to 3 / 4 or more of the thickness of the color filter ( 5 a , 5 b ). In addition, the color filters ( 5 a , 5 b ) are formed to be embedded in the grid-shaped light-shielding walls ( 8 ) (or reflecting walls). Accordingly, color mixing is more effectively suppressed in order to receive accurate signals in the light receiving unit.
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Description

technical field

[0001] The present invention relates to a solid-state imaging device composed of a semiconductor element that performs photoelectric conversion of image light from a subject to take an image, and a digital video camera and a digital still camera that use the solid-state imaging device as an image input device in an imaging unit. Electronic information equipment such as digital cameras such as cameras, image input cameras such as surveillance cameras, scanners, facsimile devices, TV telephone devices, and mobile phone devices with cameras. Background technique

[0002] As such conventional solid-state imaging devices, there are CCD-type solid-state imaging devices and CMOS-type solid-state imaging devices including a mechanism for separating incident light into colors (for example, RGB) in a plurality of wavelength ranges by color filters. Among the performances of a solid-state imaging device for obtaining color images, important performances are light-receiv...

Examples

Embodiment approach 1

[0071] figure 1 It is a vertical cross-sectional view showing a configuration example of main parts of the solid-state imaging device according to Embodiment 1 of the present invention.

[0072] like figure 1 As shown, in the solid-state imaging device 1 of the first embodiment, on the upper part of the semiconductor substrate 2, a plurality of semiconductor elements configured to perform photoelectric conversion of image light from a subject and perform imaging are arranged in a matrix. a light receiving unit 3 . Above each light-receiving portion 3, corresponding to each light-receiving portion 3, a planarizing film 4 is interposed, and a transparent film 10 (SiO 2 film) are provided with respective color filters 5a, 5b. Above the color filters 5 a , 5 b , corresponding to the light receiving portions 3 , there are provided microlenses 7 for condensing incident light on the light receiving portions 3 via the planarizing film 6 . The color filters 5a and 5b are any one ...

Embodiment approach 2

[0081] In this Embodiment 2, between the light-shielding wall 8 (or reflective wall) and the color filters 5a, 5b embedded therebetween, a transparent film for bonding them (for example, a metal and an organic film) is provided. The case of bonding the film will be described.

[0082] Figure 4 It is a longitudinal sectional view showing a configuration example of main parts of the solid-state imaging device according to Embodiment 2 of the present invention, (a) is a longitudinal sectional view showing a case where the bonding film is discontinuous, and (b) is a longitudinal sectional view showing a case where the bonding film is continuous. Sectional view.

[0083] like Figure 4 As shown in (a), in the solid-state imaging device 11 according to the second embodiment, semiconductor elements for performing photoelectric conversion of image light from a subject to take an image are arranged in a matrix on the upper portion of the semiconductor substrate 2 . A plurality of l...

Embodiment approach 3

[0091] In Embodiment 3, a case where the light-shielding wall 8 (or reflective wall) and / or the color filters 5 a and 5 b are directly provided on the semiconductor substrate 2 will be described.

[0092] Figure 5 It is a vertical cross-sectional view showing a configuration example of main parts of a solid-state imaging device according to Embodiment 3 of the present invention.

[0093] like Figure 5 As shown, in the solid-state imaging device 12 according to the third embodiment, on the upper part of the semiconductor substrate 2, a plurality of semiconductor elements configured to perform photoelectric conversion of image light from a subject and perform imaging are arranged in a matrix. a light receiving unit 3 . On the semiconductor substrate 2 on which the light receiving portions 3 are formed, the color filters 5 a , 5 b are provided directly (without interposing the planarizing film 4 ) corresponding to the light receiving portions 3 via the transparent film 10 . ...