Preparation method of silicon-zirconium alloy used for sputtering target material

Abstract

The invention provides a preparation method of silicon-zirconium alloy used for a sputtering target material. The method is characterized by including the steps of: 1) cleaning and drying screened high-purity silicon powder and water-sealed zirconium powder to improve the purity; 2) according to preset ratio, placing the high-purity silicon powder and the water-sealed zirconium powder in a container to form uniformly-distributed mixed powder; 3) sieving the uniformly-mixed powder and placing the powder in a crucible, placing the crucible in a graphite mold and placing the graphite mold in a hot-pressing furnace chamber; 4) performing hot-pressed sintering under a vacuum environment with pressurization by inert gas, wherein axial pressurization is employed and temperature is increased to 1000-1500 DEG C, and maintaining the temperature for a preset time; and 5) after the temperature maintenance is finished, reducing the temperature, and stopping the vacuumizing device at lower than 400 DEG C so as to naturally cool the furnace body, thereby producing a silicon-zirconium alloy ingot that has been hot-press sintered. The preparation method of the silicon-zirconium alloy target material is simple in processes and is low in energy consumption and cost. The target material has uniform distribution on structure components and has excellent sputtering usage performance.

Description

technical field

[0001] The invention relates to the technical field of target material preparation, in particular to a method for preparing a silicon-zirconium alloy for a sputtering target material. Background technique

[0002] Electronic products have become an indispensable tool and necessity in our life. A very important part of electronic products is the liquid crystal display, and the development of display coating technology has promoted the improvement and application of targets. Sputtering is one of the main technologies for preparing thin film materials. Sputtering is a physical vapor deposition coating technology. The ions generated by the ion source are accelerated in a high vacuum environment to form a high-speed energy ion beam that bombards the surface of solid materials. Momentum is exchanged with the atoms on the solid surface, so that the atoms on the solid surface leave the solid and deposit on the surface of the substrate. The solid being bombarded is t...

Examples

preparation example Construction

[0022] A method for preparing a silicon-zirconium alloy for a sputtering target, comprising the steps of:

[0023] S1. First use a sieve to screen high-purity silicon powder and water-sealed zirconium powder with a certain mesh number. The mesh number of high-purity silicon powder is 20-70 mesh, and the mesh number of water-sealed zirconium powder is 100-300 mesh. High-purity silicon powder and water-sealed zirconium powder are successively cleaned with deionized water and absolute ethanol solution for ultrasonic vibration cleaning and drying to improve the purity;

[0024] S2. According to the mass percentage of high-purity silicon powder and water-sealed zirconium powder according to the alloy: Si 60-90at%, Zr 10-40at%, put the high-purity silicon powder and water-sealed zirconium powder in the container to make a uniform distribution mixed powder;

[0025] S3. Sieve the uniformly mixed mixed powder, put it into a crucible, put the crucible into a graphite mold, and put it ...

Embodiment 1

[0029] In this embodiment, in order to produce high-purity silicon-zirconium target material, the purity of the raw material silicon powder and zirconium powder used is about 99.99% and 99.6% respectively, and a certain mesh number of high-purity silicon powder and water-sealed zirconium powder are screened with a sieve, Among them, the mesh number of high-purity silicon powder is about 45 mesh, and the mesh number of water-sealed zirconium powder is about 200 mesh. Shake and wash for 3 hours, then dry at 100°C for 6 hours to improve the purity;

[0030] In addition, in order to be able to produce a silicon-zirconium alloy target, and the produced silicon-zirconium alloy target can meet the sputtering requirements, there are also requirements for the mass percentage of silicon powder and zirconium powder. After the inventor's creative work, in this implementation, high Pure silicon powder and water-sealed zirconium powder according to the mass percentage of the alloy: Si 73.5a...

technical field

[0001] The invention relates to the technical field of target material preparation, in particular to a method for preparing a silicon-zirconium alloy for a sputtering target material. Background technique

[0002] Electronic products have become an indispensable tool and necessity in our life. A very important part of electronic products is the liquid crystal display, and the development of display coating technology has promoted the improvement and application of targets. Sputtering is one of the main technologies for preparing thin film materials. Sputtering is a physical vapor deposition coating technology. The ions generated by the ion source are accelerated in a high vacuum environment to form a high-speed energy ion beam that bombards the surface of solid materials. Momentum is exchanged with the atoms on the solid surface, so that the atoms on the solid surface leave the solid and deposit on the surface of the substrate. The solid being bombarded is t...

Examples

preparation example Construction

[0022] A method for preparing a silicon-zirconium alloy for a sputtering target, comprising the steps of:

[0023] S1. First use a sieve to screen high-purity silicon powder and water-sealed zirconium powder with a certain mesh number. The mesh number of high-purity silicon powder is 20-70 mesh, and the mesh number of water-sealed zirconium powder is 100-300 mesh. High-purity silicon powder and water-sealed zirconium powder are successively cleaned with deionized water and absolute ethanol solution for ultrasonic vibration cleaning and drying to improve the purity;

[0024] S2. According to the mass percentage of high-purity silicon powder and water-sealed zirconium powder according to the alloy: Si 60-90at%, Zr 10-40at%, put the high-purity silicon powder and water-sealed zirconium powder in the container to make a uniform distribution mixed powder;

[0025] S3. Sieve the uniformly mixed mixed powder, put it into a crucible, put the crucible into a graphite mold, and put it ...

Embodiment 1

[0029] In this embodiment, in order to produce high-purity silicon-zirconium target material, the purity of the raw material silicon powder and zirconium powder used is about 99.99% and 99.6% respectively, and a certain mesh number of high-purity silicon powder and water-sealed zirconium powder are screened with a sieve, Among them, the mesh number of high-purity silicon powder is about 45 mesh, and the mesh number of water-sealed zirconium powder is about 200 mesh. Shake and wash for 3 hours, then dry at 100°C for 6 hours to improve the purity;

[0030] In addition, in order to be able to produce a silicon-zirconium alloy target, and the produced silicon-zirconium alloy target can meet the sputtering requirements, there are also requirements for the mass percentage of silicon powder and zirconium powder. After the inventor's creative work, in this implementation, high Pure silicon powder and water-sealed zirconium powder according to the mass percentage of the alloy: Si 73.5a...