Enhanced layout of multi-finger electrostatic discharge (ESD) protection device

Abstract

An enhanced layout of a multi-finger ESD protection device has several embodiments. In these embodiments, the base contact of an NPN (or PNP) transistor used as a voltage clamp in a multi-finger NPN (multi-finger PNP) based multi-finger ESD protection device is disposed at an opposite edge of the multi-finger ESD protection device and oriented perpendicular to the orientation of the fingers in the multi-finger ESD protection device. Similarly, the bulk contact of an NMOS (or PMOS) transistor used as a voltage clamp in a multi-finger NMOS (or multi-finger PMOS) based multi-finger ESD protection device is disposed at an opposite edge of the multi-finger ESD protection device and oriented perpendicular to the orientation of the fingers in the multi-finger ESD protection device.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to U.S. Provisional Patent Application Serial No. 62 / 327,726, filed April 26, 2016, and U.S. Provisional Patent Application Serial No. 62 / 478,461, filed March 29, 2017, the entire contents of which are incorporated herein by reference. Technical Field

[0003] This embodiment generally relates to electrostatic discharge (ESD) protection, and more specifically to an enhanced layout of ESD protection devices for integrated circuits. Background Technology

[0004] Metal-oxide-semiconductor field-effect transistors (MOSFETs) and bipolar junction transistors (BJTs) are commonly used in CMOS integrated circuits for electrostatic discharge (ESD) protection to clamp any large ESD-induced voltage pulses to a sufficiently low level to avoid damage to the semiconductor devices and / or metal interconnects in the integrated circuit chip involved. However, existing bipolar and MOSFET-based clamps for ESD protection cannot protect any semiconductor device whose turn-on voltage is lower than the trigger voltage of the ESD clamp used. Summary of the Invention

[0005] The embodiments provide an enhanced layout for a multi-finger ESD protection device. In one exemplary embodiment, the multi-finger ESD protection device includes a plurality of MOSFET devices, such as a plurality of ground-gate NMOS (ggNMOS) transistor devices connected in parallel. In another embodiment, the MOSFET devices include a plurality of ggPMOS transistor devices. In another embodiment, the multi-finger ESD protection device includes a plurality of NPN transistor devices connected in parallel. In yet another embodiment, the multi-finger ESD protection device includes a plurality of PNP transistor devices connected in parallel. In any case, the base contact of the NPN (or PNP) transistor used as a voltage clamp in a multi-finger ESD protection device based on multi-finger NPN (or multi-finger PNP) is located at opposite edges of the multi-finger ESD protection device and is perpendicular to the orientation of the fingers in the multi-finger ESD protection device. Similarly, the body contact of the NMOS (or PMOS) transistor used as a voltage clamp in a multi-finger ESD protection device based on multi-finger NMOS (or multi-finger PMOS) is located at opposite edges of the multi-finger ESD protection device and is perpendicular to the orientation of the fingers in the multi-finger ESD protection device. Attached Figure Description

[0006] These and other aspects and features of this embodiment will become apparent to those skilled in the art from the following description of specific embodiments in conjunction with the accompanying drawings, wherein:

[0007] Figure 1 A side cross-sectional view of an exemplary ESD clamping device that can be used in multi-finger ESD protection devices to implement an exemplary embodiment is depicted.

[0008] Figure 2 A side cross-sectional view of an exemplary ESD clamping device that can be used in multi-finger ESD protection devices to implement a second exemplary embodiment is shown.

[0009] Figure 3 A top view of an exemplary multi-finger ESD protection device that can be used to implement an exemplary embodiment is depicted.

[0010] Figure 4 A top view of an exemplary multi-finger ESD protection device that can be used to implement a second exemplary embodiment is depicted.

[0011] Figure 5 It is a graph depicting an exemplary transmission line pulse (TLP) current (A) versus voltage (V) measurement curve that can be applied to a multi-finger ESD protection device configured according to an exemplary embodiment.

[0012] Figure 6 A flowchart is shown illustrating a method for manufacturing a multi-finger ESD protection device according to an exemplary embodiment.

[0013] Figure 7 A schematic block diagram of an exemplary transmitter / receiver system that can be used to implement a multi-finger ESD protection device according to one or more embodiments is depicted.

[0014] Figure 8 A schematic block diagram of an exemplary analog switch is depicted according to one or more embodiments, configured to be used to implement a multiplexer / demultiplexer (e.g., MUX switch) system for multi-finger ESD protection. Detailed Implementation

[0015] This embodiment will now be described in detail with reference to the accompanying drawings, which are provided as illustrative examples of the embodiments to enable those skilled in the art to practice embodiments and alternatives that are obvious to them. It is important to note that the following drawings and embodiments do not imply limiting the scope of the embodiments of the invention to a single embodiment, but rather other embodiments are implemented by interchangeing some or all of the elements described or shown. Furthermore, where certain elements of this embodiment can be partially or fully implemented using known components, only those portions of these known components necessary for understanding this embodiment will be described, and detailed descriptions of the other portions of these known components will be omitted so as not to obscure the embodiment. Embodiments described as being implemented in software should not be limited thereto, but may include implementations implemented in hardware, or combinations of software and hardware, and vice versa, as will be apparent to those skilled in the art, unless otherwise stated. In this specification, embodiments representing specific components should not be considered limiting; rather, this disclosure is intended to cover other embodiments including multiple identical components, and vice versa, unless expressly stated otherwise herein. Furthermore, the applicant does not intend any term in the specification or claims to be assigned an uncommon or special meaning unless explicitly stated otherwise. Additionally, this embodiment includes currently and future known equivalents of known components referenced herein by way of illustration.

[0016] Metal-oxide-semiconductor field-effect transistors (MOSFETs) and bipolar junction transistors (BJTs) are commonly used in CMOS integrated circuits for electrostatic discharge (ESD) protection to clamp any large ESD-induced voltage pulses to a sufficiently low level to avoid damage to the semiconductor devices and / or metal interconnects in the involved integrated circuit chip. However, existing bipolar and MOSFET-based clamps for ESD protection cannot protect any semiconductor device whose turn-on voltage is lower than the trigger voltage of the ESD clamp used. Therefore, if an ESD event occurs, the semiconductor device, and consequently the protected integrated circuit chip, may fail.

[0017] Multi-finger ESD protection devices, comprising multiple voltage clamps connected in parallel, can achieve significantly higher ESD current conduction performance than a single clamp. However, existing high-voltage (e.g., >20V) NPN and NMOS ESD clamps exhibit high bounce characteristics and low holding voltages (e.g., <5V lower than their trigger voltage). Therefore, individual NPN and NMOS high-voltage clamps used in existing multi-finger ESD protection devices can inadvertently turn on, resulting in uneven ESD current distribution across the multiple fingers during an ESD event. Consequently, both the conductive fingers and the multi-finger ESD protection device may fail. However, as described below, despite the aforementioned problems with bipolar and MOSSFET-based ESD clamps, the present invention addresses these and other related problems with a novel layout and structure of multi-finger bipolar and MOSSFET-based ESD clamps that can trigger uniformly during an ESD event.

[0018] Embodiments of the present invention provide an enhanced layout for a multi-finger ESD protection device. In one exemplary embodiment, the multi-finger ESD protection device includes a plurality of MOSFET devices, such as a plurality of ground-gate NMOS (ggNMOS) transistor devices connected in parallel. In another embodiment, the MOSFET devices include a plurality of ggPMOS transistor devices. In another embodiment, the multi-finger ESD protection device includes a plurality of NPN transistor devices connected in parallel. In yet another embodiment, the multi-finger ESD protection device includes a plurality of PNP transistor devices connected in parallel. In any case, the base contact of the NPN (or PNP) transistor used as a voltage clamp in a multi-finger ESD protection device based on multi-finger NPN (or multi-finger PNP) is located at opposite edges of the multi-finger ESD protection device and oriented perpendicular to the orientation of the fingers in the multi-finger ESD protection device. Similarly, the body contact of the NMOS (or PMOS) transistor used as a voltage clamp in a multi-finger ESD protection device based on multi-finger NMOS (or multi-finger PMOS) is located at opposite edges of the multi-finger ESD protection device and oriented perpendicular to the orientation of the fingers in the multi-finger ESD protection device. Therefore, according to the teachings of this application, each finger in a multi-finger ESD protection device will have the same base resistance or body resistance, and the maximum resistance will be at the center of each finger. Thus, since all fingers have the same resistance, all fingers will conduct simultaneously in the event of an ESD event, which helps ensure consistent triggering of the individual clamps, thereby maximizing the current-carrying capacity of the ESD protection device involved.

[0019] Figure 1 A side cross-sectional view of an exemplary ESD clamping device 100, which can be used in a multi-finger ESD protection device to implement an exemplary embodiment of the present invention, is shown. (Refer to...) Figure 1 An exemplary ESD clamping device 100 includes a MOSFET device 102. In this embodiment, the MOSFET device 102 is an ggNMOS transistor device. However, in another embodiment, the MOSFET device 102 can be implemented using any suitable MOS transistor device (e.g., NMOS or PMOS). For example, if the β value of the corresponding parasitic PNP bipolar transistor in the ggPMOS transistor is sufficiently high, the MOSFET device 102 can be a P-MOSFET device instead of an N-MOSFET device. Return to Figure 1 The drain terminal 104 of the MOSFET device 102 is connected to the input / output (I / O) pad 106, and the gate terminal 108 and source terminal 110 of the MOSFET device 102 are connected to a reference potential, such as ground contact 112. For example, the I / O pad 106 may be connected to an input port or pin of an integrated circuit that is to be protected against ESD events, such as electrostatic discharge on that port or pin.

[0020] MOSFET device 102 is formed in a lightly doped deep P-well region 116 that isolates MOSFET device 102 from the N-type semiconductor substrate (i.e., P-type background doping). For example, P-well region 116 can be formed by implanting dopant into the surface of a region or layer of semiconductor material having N-type conductivity using a suitable implantation process. However, if MOSFET device 102 is an ggPMOS transistor device in a different embodiment, MOSFET device 102 can be formed in a lightly doped deep N-well region that isolates MOSFET device 102 from the P-type semiconductor substrate (N-type background doping).

[0021] In this embodiment, the drain 104 of the MOSFET device 102 has N+ conductivity and is connected to the I / O pad 106. The gate 108 of the MOSFET device 102 is connected to the ground contact 112, which is connected to the circuit ground of the integrated circuit to be protected against ESD events. The source 110 of the MOSFET device 102 has N+ conductivity and is also connected to the ground contact 112. The body 114 of the MOSFET device 102 has P+ conductivity and is coupled to the I / O pad 106 and the ground contact 112 via a parasitic NPN bipolar transistor 118. Notably, during an ESD event, when the ggNMOS transistor device 102 is triggered and turned on, the drain 104, gate 108, and source 110 form the collector, base, and emitter of the parasitic NPN bipolar transistor 118 in the ggNMOS transistor device 102, respectively.

[0022] In an exemplary operation of the ESD clamping device 100, refer to Figure 1 If no ESD event occurs in the protected circuit (e.g., "normal" operation), the ESD clamping device 100 remains "off" (e.g., inactive or non-conductive), and the gate-source voltage Vgs of the MOSFET device 102 remains substantially equal to 0V. However, if an ESD event (e.g., electrostatic discharge) occurs on an input (or output) pin of the protected integrated circuit connected to the I / O pad 106, the parasitic NPN bipolar transistor 118, formed by the drain 104 (i.e., the collector of parasitic transistor 118), the body 114 (i.e., the base of parasitic transistor 118), and the source 110 (i.e., the emitter of parasitic transistor 118), is "on" (e.g., active or conductive) when the voltage across the drain-body junction of the MOSFET device 102 reaches the avalanche breakdown voltage level. At this time, the ESD clamping device 100 is triggered to "on," and the ESD current is coupled from the I / O pad 106 to the ground contact 112.

[0023] Figure 2 A side cross-sectional view of an exemplary ESD clamping device 200 is shown, which can be used in a multi-finger ESD protection device to implement a second exemplary embodiment of the present invention. Reference Figure 2 An exemplary ESD clamping device 200 includes an NPN transistor device 202. In this embodiment, the NPN transistor device 202 is used for the ESD clamping device 200. However, in another embodiment, any suitable PNP transistor device can be used to implement the ESD clamping device 200. Return to Figure 2 The collector terminal 204 of the ESD clamping device 200 is connected to the input / output (I / O) pad 206, and the emitter terminal 208 and base terminal 214 of the ESD clamping device 200 are connected to a reference potential, such as the ground contact 212. For example, the I / O pad 206 may be connected to a port or pin of an integrated circuit to be protected against an ESD event, and the ground contact 212 may be connected to a ground pin of the integrated circuit, wherein the ESD event is, for example, an electrostatic discharge on that port or pin.

[0024] The NPN transistor device 102 is formed in a lightly doped deep P-well region 216, which isolates the NPN transistor device 202 from the N-type semiconductor substrate (i.e., P-type background doping). For example, the P-well region 216 can be formed by implanting a dopant into the surface of a region or layer of semiconductor material with N-type conductivity using a suitable implantation process. However, if the ESD clamping device 200 uses a PNP transistor device in a different embodiment, the PNP transistor device can be formed in a lightly doped deep N-well region, which isolates the PNP transistor device 202 from the P-type semiconductor substrate (N-type background doping).

[0025] In this embodiment, the collector 204 of the NPN transistor device 202 has N+ conductivity and is connected to the I / O pad 206. The emitter 208 also has N+ conductivity of the NPN transistor device 202 and is connected to the ground contact 212, which in turn can be connected to the circuit ground of the integrated circuit to be protected against ESD events. The base 214 of the NPN transistor device 202 has P+ conductivity and is also connected to the ground contact 212. The base 214 is coupled to the I / O pad 206 and the ground contact 212 via a bipolar transistor 218. Notably, in the event of an ESD event, when the voltage across the collector-base junction of the bipolar transistor 218 reaches the avalanche breakdown voltage level, the ESD clamping device 200 is triggered to "turn on," thereby conducting the ESD current from the I / O pad 206 and coupling it to the ground contact 212.

[0026] Figure 3 A top view is depicted of an exemplary multi-finger ESD protection device 300 that can be used to implement an exemplary embodiment of the present invention. Reference Figure 3 An exemplary multi-finger ESD protection device 300 includes multiple ESD voltage clamps (e.g., Figure 1 The multiple ESD clamping devices 100 shown are thus illustrated. Figure 3 As shown, each of the multiple ESD voltage clamps is used to form one finger of the multi-finger ESD protection device 300. For example, Figure 3 The exemplary finger 302 of the multi-finger ESD protection device 300 shown includes a MOSFET device having a drain 304, a polysilicon gate 308, and a source 310 (e.g., Figure 1 102 in the middle). Multiple fingers are formed in the lightly doped deep P-well region 316 (e.g., Figure 1 (P-well region 116 in the example). For this exemplary embodiment, Figure 3 Each of the plurality of fingers shown (e.g., finger 302) is formed to be adjacent to and parallel to at least one other finger. Figure 3 In the illustrated embodiment, multiple fingers are vertically oriented (as depicted in the diagram). Figure 3 (within the plane defined by the paper surface). The multi-finger ESD protection device 300 also includes a plurality of body contacts 312a, 312b formed at opposite edges 320a, 320b of the multi-finger ESD protection device 300. For this embodiment, the body contacts 312a, 312b may include, for example, connections to... Figure 1 The multiple body contacts of the multiple body terminals 114 shown. Figure 3In the illustrated embodiment, the main contacts 312a and 312b are formed perpendicular to the direction of the plurality of fingers (e.g., fingers 302). Thus, the main contacts 312a and 312b are horizontally oriented (as depicted in the diagram). Figure 3 (within the plane defined by the paper surface). It is worth noting that, according to the teachings of this application, the orientation of the body contacts 312a, 312 perpendicular to the orientation of the multiple fingers (e.g., 302) ensures that all fingers of the multi-finger ESD protection device 300 have equal volume resistance and that the maximum resistance of each finger is located in its central region. Therefore, during an ESD event (e.g., electrostatic discharge), all fingers of the multi-finger ESD protection device 300 are triggered uniformly to turn on virtually simultaneously, which maximizes the current-carrying capacity of the ESD protection device by uniformly distributing the ESD current through the multiple fingers, thereby improving the overall ESD protection performance of the ESD protection device.

[0027] Figure 4 A top view is depicted of an exemplary multi-finger ESD protection device 400 that can be used to implement a second exemplary embodiment of the present invention. (Reference) Figure 4 An exemplary multi-finger ESD protection device 400 includes multiple ESD voltage clamps (e.g., Figure 2 The multiple ESD clamping devices 200 shown are thus illustrated. Figure 4 As shown, each of the multiple ESD voltage clamps is used to form one finger of the multi-finger ESD protection device 400. For example, Figure 4 An exemplary finger 402 among the plurality of fingers of the multi-finger ESD protection device 400 shown includes an NPN transistor device having a collector 404 and an emitter 410 (e.g., Figure 2 (202 in the example). For this exemplary embodiment, Figure 4 Each of the plurality of fingers depicted (e.g., finger 402) is formed adjacent to and parallel to at least one other finger. The plurality of fingers are formed in a lightly doped deep P-well region 416 (e.g., Figure 2 In the P-well region 216). Figure 4 In the illustrated embodiment, multiple fingers are vertically oriented (as depicted in the diagram). Figure 4 (within the plane defined by the paper surface). The multi-finger ESD protection device 400 also includes a plurality of base contacts 412a, 412b formed at opposite edges 420a, 420b of the multi-finger ESD protection device 400. For this embodiment, the base contacts 412a, 412b may include, for example, connections to... Figure 2 The multiple base terminals 214 shown have multiple base contacts. Figure 4In the illustrated embodiment, base contacts 412a, 412b are formed perpendicular to the direction of the plurality of fingers (e.g., fingers 402). Therefore, base contacts 412a, 412b are horizontally oriented (as depicted in the diagram). Figure 4 (within the plane defined by the paper surface). It is worth noting that, according to the teachings of this application, the orientation of the base contacts 412a, 412b perpendicular to the orientation of the multiple fingers (e.g., 402) ensures that all fingers of the multi-finger ESD protection device 400 have equal volume resistance and that the maximum resistance of each finger is located in its central region. Therefore, during an ESD event (e.g., electrostatic discharge), all fingers of the multi-finger ESD protection device 400 are uniformly triggered to conduct virtually simultaneously, which maximizes the current-carrying capacity of the ESD protection device by uniformly distributing the ESD current through the multiple fingers, thereby improving the overall ESD protection performance of the ESD protection device.

[0028] Figure 5 This is a graph 500 depicting an exemplary transmission line pulse (TLP) current (A) versus voltage (V) measurement curve applicable to a multi-finger ESD protection device configured according to an exemplary embodiment of the present invention. For example, Figure 5 As shown in Figure 500 at point 502, as the voltage (V) of the conventional multi-finger clamping device used increases from about 5.8V to about 6.2V, the maximum current flowing through the device reaches a maximum of about 1.1A, at which point the device fails. However, at point 504, Figure 500 shows that as the voltage (V) of the multi-finger NPN transistor ESD protection device configured according to the teachings of this application increases from about 5.8V to about 7.8V, the maximum current flowing through the multi-finger NPN transistor ESD protection device increases to about 2.6A, or about twice the maximum current at which the conventional device fails.

[0029] Figure 6 A flowchart depicts a method 600 for manufacturing a multi-finger ESD protection device according to an exemplary embodiment of the present invention. (Reference) Figures 1 to 4For this exemplary embodiment, method 600 begins by forming a plurality of adjacent ESD clamping devices (e.g., 100, 200) into a multi-finger ESD protection device (602). Then, the plurality of adjacent ESD clamping devices of the multi-finger ESD protection device are oriented along a first direction (604). The method continues by forming a plurality of contacts (e.g., 312a, 312b, 412a, 412b) associated with the plurality of adjacent ESD clamping devices at two opposite edges of the multi-finger ESD protection device (606). Next, the plurality of contacts at the two opposite edges of the multi-finger ESD protection device are oriented along a second direction perpendicular to the first direction (608). Therefore, the method of oriented the contacts perpendicular to the direction of the plurality of fingers ensures that all fingers of the multi-finger ESD protection device have equal volume resistance, and that the maximum resistance of each finger is located in its central region. Therefore, method 600 ensures that during an ESD event (e.g., electrostatic discharge), all fingers of the multi-finger ESD protection device are uniformly triggered to conduct virtually simultaneously. This is used to uniformly distribute the ESD current through the multiple fingers, maximizing the current-carrying capacity of the ESD protection device and thereby improving the overall ESD protection performance of the ESD protection device.

[0030] Figure 7 A schematic block diagram of an exemplary transmitter / receiver system 700, which can be used to implement a multi-finger ESD protection device according to one or more embodiments of the present invention, is depicted. In some embodiments, the transmitter / receiver system 700 may be implemented as a semiconductor IC or chip. Reference Figure 7 In one exemplary embodiment, the transmitter / receiver system 700 includes a transmitter T1 and a receiver R1. In other embodiments, the transmitter / receiver system 700 may include multiple transmitters and receivers in a semiconductor IC or chip. In any case, the I / O pads of the multiple fingers of the ESD protection device 702 (e.g., Figure 1 106 or Figure 2 206) is connected to the input connection T1IN of the transmitter T1, and the reference contact of the first multi-finger ESD protection device 702 is, for example, the ground contact (e.g., Figure 1 Contact 112 or Figure 2 (212) is coupled to circuit ground 14. Additionally, the I / O pads of the second multi-finger ESD protection device 704 are connected to the output connection T1OUT of the transmitter T1, and the contacts of the second multi-finger ESD protection device 704 are coupled to a reference potential, such as circuit ground 14. Furthermore, several other multi-finger ESD protection devices may be connected to other circuit components of the transmitter / receiver system 700 between their respective pin connections and a reference potential (e.g., ground). If an ESD event occurs, for example, on the input connection T1IN or the output connection T1OUT, the corresponding multi-finger ESD protection device is triggered and turned on.

[0031] Figure 8 A schematic block diagram of an exemplary analog switch configured as a multiplexer / demultiplexer (e.g., MUX switch) system 800 according to one or more embodiments of the present invention is depicted, which can be used to implement a multi-finger ESD protection device. In some embodiments, the MUX switch system 800 may be implemented on a semiconductor IC or chip. Reference Figure 8 In one exemplary embodiment, the MUX switching system 800 includes (among other components) a level shifter 702 and a decoder / driver 704. In the illustrated exemplary embodiment, the I / O pads of the first multi-finger ESD protection device 806 (e.g., Figure 1 106 or Figure 2 206) is connected to input connection A0, and the reference contact of the first multi-finger ESD protection device 806 (e.g., Figure 1 112 or Figure 2 212) is connected to a reference potential, such as circuit ground. Additionally, the I / O pads of the second multi-finger ESD protection device 808 are connected to input connection A. X Furthermore, the reference contact of the second multi-finger ESD protection device is connected to a reference potential, such as circuit ground. A1 to A2 can be connected to each of the other inputs. X-1 Additional multi-finger ESD protection devices are connected between the main output connection D and a reference potential (e.g., circuit ground). For example, a third multi-finger ESD protection device 810 is connected between the main output connection D and a reference potential, such as circuit ground; a fourth multi-finger ESD protection device 812 is connected between the main multiplexer connection S1 and a reference voltage potential, such as circuit ground; and a fifth multi-finger ESD protection device 814 is connected between the main multiplexer connection S1 and a reference voltage potential, such as circuit ground. N Between and a reference potential, such as circuit ground. Additional multi-finger ESD protection devices can be connected to other main multiplexers connected to S2 to S2. N-1 Between the reference potential and a ground, such as circuit ground. Additionally, several other multi-finger ESD protection devices can be connected between their respective pin connections and a reference potential (e.g., ground) to other circuit components of the MUX switching system 800. If an ESD event occurs on any of the inputs or outputs shown, the attached multi-finger ESD protection device is triggered and turned on.

[0032] Although this embodiment has been specifically described with reference to preferred embodiments, it will be apparent to those skilled in the art that changes and modifications in form and detail can be made to this disclosure without departing from its spirit and scope. The appended claims are intended to include such changes and modifications.

Claims

1. A multi-finger electrostatic discharge protection device, comprising: A plurality of adjacent electrostatic discharge clamping devices oriented along a first direction, wherein each of the plurality of adjacent electrostatic discharge clamping devices includes an input / output (I / O) pad and a contact configured to be coupled to a reference potential; and Multiple contacts associated with the plurality of adjacent electrostatic discharge clamping devices, wherein the plurality of contacts are oriented in a second direction perpendicular to the first direction in a plane oriented along a first direction, and wherein the plurality of contacts are either multiple body contacts connected to multiple body terminals of the plurality of adjacent electrostatic discharge clamping devices, or multiple base contacts connected to multiple base terminals of the plurality of adjacent electrostatic discharge clamping devices. The plurality of contacts are disposed at the opposite edges of the plurality of adjacent electrostatic discharge clamping devices in a plane oriented along the first direction. Each of the plurality of adjacent electrostatic discharge clamping devices forms a finger-like component of the multi-finger electrostatic discharge protection device. In the plane oriented along the first direction, each finger is formed to be adjacent to and parallel to at least one other finger. The plurality of contacts are oriented only perpendicular to the orientation of the fingers, so that all the fingers of the multi-finger electrostatic discharge protection device have equal volume resistance, and the maximum resistance of each finger is located in its central region.

2. The multi-finger electrostatic discharge protection device according to claim 1, wherein the plurality of adjacent electrostatic discharge clamping devices include a plurality of fingers of the multi-finger electrostatic discharge protection device.

3. The multi-finger electrostatic discharge protection device according to claim 1, wherein the plurality of adjacent electrostatic discharge clamping devices include a plurality of MOSFET devices, and the plurality of contacts include the plurality of main body contacts.

4. The multi-finger electrostatic discharge protection device according to claim 3, wherein the plurality of MOSFET devices includes a plurality of ground-gate NMOS (ggNMOS) transistor devices.

5. The multi-finger electrostatic discharge protection device according to claim 3, wherein the plurality of MOSFET devices includes a plurality of ggPMOS transistor devices.

6. The multi-finger electrostatic discharge protection device according to claim 1, wherein the plurality of adjacent electrostatic discharge clamping devices comprise a plurality of PNP transistor devices.

7. The multi-finger electrostatic discharge protection device according to claim 1, wherein the plurality of contacts associated with the plurality of adjacent electrostatic discharge clamping devices are arranged at two opposite edges of the multi-finger electrostatic discharge protection device.

8. The multi-finger electrostatic discharge protection device according to claim 1, wherein the multi-finger electrostatic discharge protection device is formed on a semiconductor integrated circuit, wafer, chip or die.

9. A multi-finger electrostatic discharge protection device, comprising: A plurality of adjacent electrostatic discharge clamping devices oriented along a first direction, wherein each of the plurality of adjacent electrostatic discharge clamping devices includes an input / output (I / O) pad and a contact configured to be coupled to a reference potential; and Multiple contacts associated with the plurality of adjacent electrostatic discharge clamping devices, wherein the plurality of contacts are oriented in a second direction perpendicular to the first direction in a plane oriented along a first direction towards the plurality of adjacent electrostatic discharge clamping devices. The plurality of adjacent electrostatic discharge clamping devices include a plurality of NPN transistor devices, and the plurality of contacts include a plurality of base contacts. The plurality of contacts are disposed at the opposite edges of the plurality of adjacent electrostatic discharge clamping devices in a plane oriented along the first direction. Each of the plurality of adjacent electrostatic discharge clamping devices forms a finger-like component of the multi-finger electrostatic discharge protection device. In the plane oriented along the first direction, each finger is formed to be adjacent to and parallel to at least one other finger. The plurality of contacts are oriented only perpendicular to the orientation of the fingers, so that all the fingers of the multi-finger electrostatic discharge protection device have equal volume resistance, and the maximum resistance of each finger is located in its central region.

10. A method for forming a multi-finger electrostatic discharge protection device, comprising: Multiple adjacent electrostatic discharge clamping devices are formed; Orienting the plurality of adjacent electrostatic discharge clamping devices along a first direction; Multiple contacts are formed that are associated with the plurality of adjacent electrostatic discharge clamping devices; and In a plane in which the plurality of adjacent electrostatic discharge clamping devices are oriented along a first direction, the plurality of contacts are oriented along a second direction perpendicular to the first direction, wherein the plurality of contacts are formed and oriented as either plurality of body contacts connected to plurality of body terminals of the plurality of adjacent electrostatic discharge clamping devices, or plurality of base contacts connected to plurality of base terminals of the plurality of adjacent electrostatic discharge clamping devices. The plurality of contacts are disposed at the opposite edges of the plurality of adjacent electrostatic discharge clamping devices in a plane oriented along the first direction. Each of the plurality of adjacent electrostatic discharge clamping devices forms a finger-like component of the multi-finger electrostatic discharge protection device. In the plane oriented along the first direction, each finger is formed to be adjacent to and parallel to at least one other finger. The plurality of contacts are oriented only perpendicular to the orientation of the fingers, so that all the fingers of the multi-finger electrostatic discharge protection device have equal volume resistance, and the maximum resistance of each finger is located in its central region.

11. The method of claim 10, wherein forming the plurality of adjacent electrostatic discharge clamping devices comprises forming a plurality of adjacent ggNMOS transistor devices.

12. The method of claim 10, wherein forming the plurality of adjacent electrostatic discharge clamping devices comprises forming a plurality of adjacent MOSFET devices.

13. The method of claim 10, wherein forming the plurality of adjacent electrostatic discharge clamping devices comprises forming a plurality of adjacent NPN transistor devices.

14. The method of claim 10, wherein forming the plurality of adjacent electrostatic discharge clamping devices comprises forming a plurality of adjacent voltage clamps.

15. A system comprising: transmitter; Receiver; and At least one multi-finger electrostatic discharge (ESD) protection device coupled to an input or output of the transmitter and a reference potential, wherein the at least one multi-finger ESD protection device includes a plurality of adjacent ESD clamping devices oriented along a first direction, wherein each of the plurality of adjacent ESD clamping devices includes an I / O pad configured to be coupled to the input or output of the transmitter and a contact configured to be coupled to the reference potential, and The plurality of contacts associated with the plurality of adjacent electrostatic discharge clamping devices, wherein the plurality of contacts are oriented in a second direction perpendicular to the first direction in a plane oriented along a first direction of the plurality of adjacent electrostatic discharge clamping devices, wherein the plurality of contacts are either plurality of body contacts connected to plurality of body terminals of the plurality of adjacent electrostatic discharge clamping devices, or plurality of base contacts connected to plurality of base terminals of the plurality of adjacent electrostatic discharge clamping devices. The plurality of contacts are disposed at the opposite edges of the plurality of adjacent electrostatic discharge clamping devices in a plane oriented along the first direction. Each of the plurality of adjacent electrostatic discharge clamping devices forms a finger-like component of the multi-finger electrostatic discharge protection device. In the plane oriented along the first direction, each finger is formed to be adjacent to and parallel to at least one other finger. The plurality of contacts are oriented only perpendicular to the orientation of the fingers, so that all the fingers of the multi-finger electrostatic discharge protection device have equal volume resistance, and the maximum resistance of each finger is located in its central region.

16. The system of claim 15, further comprising at least one second multi-finger electrostatic discharge protection device coupled to the input or output of the receiver and the reference potential.

17. The system of claim 15, wherein the system comprises a transceiver formed on a semiconductor wafer, chip, integrated circuit, or die.

18. A system comprising: Level shifter; Decoder / Driver; and At least one multi-finger electrostatic discharge protection device coupled to the input and reference potential of the level shifter, wherein the at least one multi-finger electrostatic discharge protection device includes a plurality of adjacent electrostatic discharge clamping devices oriented along a first direction, wherein each of the plurality of adjacent electrostatic discharge clamping devices includes an I / O pad configured to be coupled to the input of the level shifter and a contact configured to be coupled to the reference potential; and The plurality of contacts associated with the plurality of adjacent electrostatic discharge clamping devices, wherein the plurality of contacts are oriented in a second direction perpendicular to the first direction in a plane oriented along a first direction of the plurality of adjacent electrostatic discharge clamping devices, wherein the plurality of contacts are either plurality of body contacts connected to plurality of body terminals of the plurality of adjacent electrostatic discharge clamping devices, or plurality of base contacts connected to plurality of base terminals of the plurality of adjacent electrostatic discharge clamping devices. The plurality of contacts are disposed at the opposite edges of the plurality of adjacent electrostatic discharge clamping devices in a plane oriented along the first direction. Each of the plurality of adjacent electrostatic discharge clamping devices forms a finger-like component of the multi-finger electrostatic discharge protection device. In the plane oriented along the first direction, each finger is formed to be adjacent to and parallel to at least one other finger. The plurality of contacts are oriented only perpendicular to the orientation of the fingers, so that all the fingers of the multi-finger electrostatic discharge protection device have equal volume resistance, and the maximum resistance of each finger is located in its central region.

19. The system of claim 18, further comprising at least one second multi-finger electrostatic discharge protection device coupled to the input or output of the system and the reference potential.

20. The system of claim 18, wherein the system includes an analog switch configured to be formed on a semiconductor wafer, chip, integrated circuit or die as a multiplexer / demultiplexer (MUX) switch.

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