A series crimping type semiconductor mechanism

Abstract

The present invention provides a series press-fit semiconductor mechanism, including a press-fit frame and a semiconductor device valve string arranged in the press-fit frame and coaxially with the press-fit frame; a pressure control component is arranged between the semiconductor device valve string and the press-fit frame; the semiconductor device valve string includes a heat sink and a semiconductor device stacked alternately, and porous metal is respectively arranged between the semiconductor device and the heat sink. By adding porous metal between the semiconductor device and the heat sink to form a semiconductor device valve string, the elastic deformation of the porous metal during press-fitting can absorb a part of the mechanical impact energy, thereby reducing the impact of the press-fitting force on the semiconductor device; the requirements of the semiconductor device on the surface shape and position tolerance of the heat sink are reduced, thereby reducing the processing cost and improving the press-fitting efficiency; the press-fitting structure is optimized, and the press-fitting efficiency is improved; the device damage is prevented; for devices that are more sensitive to changes in the press-fitting force, a multi-stage series large component solution can be implemented to improve the integration of the entire system.

Description

Technical Field

[0001] The invention relates to a semiconductor device assembly device, in particular to a series crimping type semiconductor mechanism. Background Art

[0002] With the development of high-power power electronics technology, especially the development of high-voltage flexible direct current transmission and flexible alternating current transmission, semiconductor devices are increasingly widely used in power systems with their flexible and controllable shutdown characteristics. The early press-fit structure of semiconductor devices was only suitable for high-precision press-fit semiconductor devices. With the localization of semiconductor devices, the original press-fit mechanism had high requirements for the surface precision of semiconductor devices and heat sinks, resulting in high processing costs and low press-fit efficiency. Secondly, the original press-fit mechanism used a ball head and ball socket structure to ensure the axial centering adjustment function of the press-fit mechanism, which made the press-fit mechanism complex in structure and increased in weight, resulting in low press-fit efficiency. Summary of the invention

[0003] In view of the shortcomings of the prior art, the applicant has designed a series crimping semiconductor mechanism; by adding porous metal between the semiconductor device and the heat sink to form a semiconductor device valve string, the elastic deformation of the porous metal during press-fitting can absorb part of the mechanical impact energy, thereby reducing the impact of the press-fitting force on the semiconductor device; the porous metal can adjust its stiffness coefficient by adjusting the porosity and pore size to achieve flexible adjustment of the contact surface of the crimping semiconductor device, reducing the requirements of the semiconductor device on the surface shape and position tolerance of the heat sink, thereby reducing the processing cost and improving the press-fitting efficiency; at the same time, the addition of porous metal also replaces the centering adjustment function of the ball head and ball socket, optimizes the press-fitting structure, and improves the press-fitting efficiency; porous metal has elastic properties, which can compensate for the pressure imbalance caused by local protrusions on the press-fitting contact surface to prevent device damage; the press-fitting mechanism of the present application can realize a multi-stage series large component solution for devices that are more sensitive to changes in press-fitting force, thereby improving the integration of the entire system.

[0004] The purpose of the present invention is achieved through the following technical solutions:

[0005] The present invention provides a series press-fit type semiconductor mechanism, the press-fit mechanism comprising a press-fit frame and a semiconductor device valve string arranged in the press-fit frame and coaxially arranged with the press-fit frame;

[0006] A pressure control component is provided between the semiconductor device valve string and the press-fit rack;

[0007] The semiconductor device valve string comprises heat sinks and semiconductor devices which are alternately stacked, and porous metals are respectively arranged between the semiconductor devices and the heat sinks.

[0008] Preferably,

[0009] The press-fitting frame comprises two end plates parallel to each other, an insulating pull rod penetrating the two end plates, and fixing members sleeved on both ends of the insulating pull rod and abutting against the end plates.

[0010] Preferably,

[0011] The number of the insulating pull rods is greater than 1 and they are symmetrical about the axis of the end plate.

[0012] Preferably,

[0013] The pressure control assembly includes a disc spring disposed between one end of the semiconductor device valve string and one of the two end plates and a pressure loading adapter disposed between the other end of the semiconductor device valve string and the other of the two end plates;

[0014] The disc spring and the pressure loading adapter are respectively coaxial with the semiconductor device valve string.

[0015] Preferably,

[0016] An insulating isolation disk, a press-fit stress cone and a gap-filling gasket are sequentially arranged between the pressure loading adapter and the semiconductor device valve string;

[0017] The insulating isolation disk is connected to the semiconductor device valve string;

[0018] The shim is connected to the pressure loading adapter;

[0019] The insulating isolation disk, the press-fit stress cone and the gap-filling gasket are respectively coaxial with the semiconductor device valve string.

[0020] Preferably,

[0021] The upper bottom of the press-fit stress cone is connected to the gap-filling gasket, and the lower bottom is connected to the insulating isolation disk.

[0022] Preferably,

[0023] Both ends of the semiconductor device valve string are heat sinks respectively.

[0024] Preferably,

[0025] The heat sink includes a first heat sink and a second heat sink which are alternately arranged from one end to the other end of the semiconductor device valve string.

[0026] Preferably,

[0027] The first heat sink comprises a plate-shaped heat sink base, busbar fixing terminals and IGBT disassembly and top pressing auxiliary terminals respectively arranged on two opposite side walls of the heat sink base, and a heat sink limiting terminal arranged on the other side wall of the heat sink base;

[0028] The upper and lower bottoms of the radiator substrate are respectively provided with IGBT connection limiting holes.

[0029] Preferably,

[0030] The second heat sink comprises a plate-shaped heat sink base, IGBT disassembly and top pressing auxiliary terminals respectively arranged on the first side wall and the second side wall of the heat sink base, a heat sink limiting terminal and a busbar fixing terminal arranged on the third side wall of the heat sink base, and a drive box limiting terminal arranged at the connection between the fourth side wall of the heat sink base and the first side wall or the second side wall;

[0031] The upper and lower bottoms of the heat sink base are respectively provided with IGBT connection limiting holes;

[0032] A driving fixing end hole is provided on the fourth side wall of the heat sink base;

[0033] The first side wall is opposite to the second side wall, and the third side wall is opposite to the fourth side wall.

[0034] Preferably,

[0035] The porous metal is in a plate shape; the porous metal is provided with holes.

[0036] Preferably,

[0037] The holes include foam-type holes, lotus-root-type holes and / or honeycomb-type holes.

[0038] Preferably,

[0039] The diameter of the holes is comprised between 2 and 3 μm.

[0040] Preferably,

[0041] The porosity of the porous metal is 45-90%;

[0042] The specific surface area of ​​the porous metal is 10 to 40 cm 2 / cm 3 .

[0043] Compared with the closest prior art, the beneficial effects of the present invention are:

[0044] 1. The technical solution provided by the present invention forms a semiconductor device valve string by adding porous metal between the semiconductor device and the heat sink. The elastic deformation of the porous metal during press-fitting can absorb part of the mechanical impact energy, thereby reducing the impact of the press-fitting force on the semiconductor device. The porous metal can adjust its stiffness coefficient by adjusting the porosity and pore size to achieve flexible adjustment of the contact surface of the press-fit semiconductor device, reducing the requirements of the semiconductor device on the surface shape and position tolerance of the heat sink, thereby reducing the processing cost and improving the press-fitting efficiency. At the same time, the addition of porous metal also replaces the centering adjustment function of the ball head and ball socket, optimizes the press-fitting structure, and improves the press-fitting efficiency. The porous metal has elastic properties and can compensate for the pressure imbalance caused by the local protrusions on the press-fitting contact surface to prevent device damage. The press-fitting mechanism of the present application can realize a multi-stage series large component solution for devices that are sensitive to changes in press-fitting force, thereby improving the integration of the entire system. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] The present invention will be further described below in conjunction with the accompanying drawings:

[0046] Figure 1 : A schematic structural diagram of the press-fitting mechanism provided by the present invention;

[0047] Figure 2 : A front view of the press-fitting mechanism provided by the present invention;

[0048] Figure 3 : A detailed diagram of the distribution of porous metal in the press-fitting mechanism provided by the present invention;

[0049] Figure 4 : A schematic structural diagram of a first heat sink in a press-fitting mechanism provided by the present invention;

[0050] Figure 5 : A top view of the first heat sink in the press-fitting mechanism provided by the present invention;

[0051] Figure 6 : A schematic structural diagram of a second heat sink in the press-fitting mechanism provided by the present invention;

[0052] Figure 7 : A top view of the second heat sink in the press-fitting mechanism provided by the present invention;

[0053] Figure markings: 1-first heat sink, 2-semiconductor device, 3-pressure loading adapter, 4-pressed stress cone, 5-filling gasket, 6-insulating isolation disk, 7-insulating pull rod, 8-end plate, 9-disc spring, 10-second heat sink, 11-porous metal, 12-heat sink limit terminal, 13-first busbar fixing terminal, 14-heat sink base, 15-IGBT disassembly and top pressure auxiliary terminal, 16-drive box limit terminal, 17-drive fixed end hole, 18-second busbar fixing terminal, 19-IGBT connection limit hole, 20-fixing part, 21-first side wall, 22-second side wall, 23-third side wall, 24-fourth side wall. DETAILED DESCRIPTION

[0054] The technical solutions in the embodiments of the present application are clearly and completely described below in conjunction with the drawings in the embodiments of the present application.

[0055] Example 1

[0056] The present invention provides a series press-fit type semiconductor mechanism, the press-fit mechanism comprising a press-fit frame and a semiconductor device valve string arranged in the press-fit frame and coaxially arranged with the press-fit frame;

[0057] A pressure control component is provided between the semiconductor device valve string and the press-fit rack;

[0058] The semiconductor device valve string comprises heat sinks and semiconductor devices 2 which are alternately stacked, and porous metals 11 are respectively provided between the semiconductor devices 2 and the heat sink.

[0059] The press-fitting frame includes two end plates 8 parallel to each other, an insulating rod 7 penetrating the two end plates 8, and a fixing member 20 sleeved on both ends of the insulating rod 7 and abutting against the end plates.

[0060] The number of the insulating tie rods 7 is greater than 1 and they are symmetrical about the axis of the end plate 8 .

[0061] The pressure control assembly includes a disc spring 9 disposed between one end of the semiconductor device valve string and one of the two end plates, and a pressure loading adapter 3 disposed between the other end of the semiconductor device valve string and the other of the two end plates;

[0062] The disc spring 9 and the pressure loading adapter 3 are respectively coaxial with the semiconductor device valve string.

[0063] An insulating isolation disk 6, a press-fit stress cone 4 and a gap-filling gasket 5 are sequentially arranged between the pressure loading adapter 3 and the semiconductor device valve string;

[0064] The insulating isolation disk 6 is connected to the semiconductor device valve string;

[0065] The gap-filling gasket 5 is connected to the pressure-loading adapter 3;

[0066] The insulating isolation disk 6, the press-fit stress cone 4 and the gap-filling gasket 5 are respectively coaxial with the semiconductor device valve string.

[0067] The upper bottom of the press-fit stress cone 4 is connected to the gap-filling gasket 5, and the lower bottom is connected to the insulating isolation disk 6; the press-fit stress cone 4 is a truncated cone, and the bottom with a smaller area is the upper bottom, and the bottom with a larger area is the lower bottom.

[0068] Both ends of the semiconductor device valve string are heat sinks respectively.

[0069] The heat sink includes a first heat sink 1 and a second heat sink 10 which are alternately arranged from one end to the other end of the semiconductor device valve string.

[0070] The first heat sink 1 comprises a plate-shaped heat sink base 14, a first busbar fixing terminal 13 and an IGBT disassembly and top pressing auxiliary terminal 15 respectively arranged on two opposite side walls of the heat sink base 14, and a heat sink limiting terminal 12 arranged on the other side wall of the heat sink base 14;

[0071] The upper and lower bottoms of the heat sink base 14 are respectively provided with IGBT connection limiting holes 19;

[0072] The first busbar fixed terminal 13 is connected to the IGBT of the other pole through a copper plate.

[0073] The second heat sink 10 includes a plate-shaped heat sink base 14, an IGBT disassembly and top pressing auxiliary terminal 15 respectively arranged on a first side wall 21 and a second side wall 22 of the heat sink base 14, a heat sink limiting terminal 12 and a second busbar fixing terminal 18 arranged on a third side wall 23 of the heat sink base 14, and a drive box limiting terminal 16 arranged at a connection between a fourth side wall 24 of the heat sink base 14 and the first side wall 21 or the second side wall 22;

[0074] The upper and lower bottoms of the heat sink base 14 are respectively provided with IGBT connection limiting holes 16;

[0075] The fourth side wall 24 of the heat sink base 14 is provided with a driving fixing end hole 17;

[0076] The first side wall 21 is opposite to the second side wall 22, and the third side wall 23 is opposite to the fourth side wall 24;

[0077] The second busbar fixing terminal 18 is connected to the capacitor-side busbar.

[0078] The porous metal 11 is in a plate shape and is provided with holes.

[0079] The holes include foam-type holes, lotus-root-type holes and / or honeycomb-type holes.

[0080] The diameter of the holes is comprised between 2 and 3 μm.

[0081] The porosity of the porous metal 11 is 45-90%;

[0082] The specific surface area of ​​the porous metal 11 is 10 to 40 cm 2 / cm 3 .

[0083] Finally, it should be noted that the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making any creative work are within the scope of protection of the present application.

Claims

1. A series pressure-bonded semiconductor structure, characterized in that: It comprises a press-fit frame and a semiconductor device valve string arranged in the press-fit frame and coaxially arranged with the press-fit frame; A pressure control component is provided between the semiconductor device valve string and the press-fit rack; The semiconductor device valve string comprises alternately stacked heat sinks and semiconductor devices, and porous metals are respectively provided between the semiconductor devices and the heat sinks; The porous metal adjusts its stiffness coefficient by adjusting the porosity and pore size, thereby achieving flexible adjustment of the contact surface of the press-fit semiconductor device, reducing the semiconductor device's requirements for the shape and position tolerance of the heat sink surface; The press-fitting frame comprises two mutually parallel end plates, an insulating pull rod penetrating the two end plates, and a fixing piece sleeved on both ends of the insulating pull rod and abutting against the end plates; The pressure control assembly includes a disc spring disposed between one end of the semiconductor device valve string and one of the two end plates and a pressure loading adapter disposed between the other end of the semiconductor device valve string and the other of the two end plates; The disc spring and the pressure loading adapter are respectively coaxial with the semiconductor device valve string; the porous metal replaces the centering adjustment function of the ball head and ball socket.

2. A series pressure-bonded semiconductor structure according to claim 1, characterized in that: The number of the insulating pull rods is greater than 1 and they are symmetrical about the axis of the end plate.

3. A series pressure-bonded semiconductor structure according to claim 1, characterized in that: An insulating isolation disk, a press-fit stress cone and a gap-filling gasket are sequentially arranged between the pressure loading adapter and the semiconductor device valve string; The insulating isolation disk is connected to the semiconductor device valve string; The shim is connected to the pressure loading adapter; The insulating isolation disk, the press-fit stress cone and the gap-filling gasket are respectively coaxial with the semiconductor device valve string.

4. A series pressure-bonded semiconductor structure according to claim 3, characterized in that: The upper bottom of the press-fit stress cone is connected to the gap-filling gasket, and the lower bottom is connected to the insulating isolation disk.

5. A series pressure-bonded semiconductor structure according to claim 1, characterized in that: Both ends of the semiconductor device valve string are heat sinks respectively.

6. A series pressure-bonded semiconductor structure according to claim 1, characterized in that: The heat sink includes a first heat sink and a second heat sink which are alternately arranged from one end to the other end of the semiconductor device valve string.

7. A series pressure-bonded semiconductor structure according to claim 6, characterized in that: The first heat sink comprises a plate-shaped heat sink base, busbar fixing terminals and IGBT disassembly and top pressing auxiliary terminals respectively arranged on two opposite side walls of the heat sink base, and a heat sink limiting terminal arranged on the other side wall of the heat sink base; The upper and lower bottoms of the radiator substrate are respectively provided with IGBT connection limiting holes.

8. A series pressure-connected semiconductor structure according to claim 6, characterized in that: The second heat sink comprises a plate-shaped heat sink base, IGBT disassembly and top pressing auxiliary terminals respectively arranged on the first side wall and the second side wall of the heat sink base, a heat sink limiting terminal and a busbar fixing terminal arranged on the third side wall of the heat sink base, and a drive box limiting terminal arranged at the connection between the fourth side wall of the heat sink base and the first side wall or the second side wall; The upper and lower bottoms of the heat sink base are respectively provided with IGBT connection limiting holes; A driving fixing end hole is provided on the fourth side wall of the heat sink base; The first side wall is opposite to the second side wall, and the third side wall is opposite to the fourth side wall.

9. A series pressure-bonded semiconductor structure according to claim 1, characterized in that: The porous metal is in a plate shape; the porous metal is provided with holes.

10. A series pressure-connected semiconductor structure according to claim 9, characterized in that: The holes include foam-type holes, lotus-root-type holes and / or honeycomb-type holes.

11. A series pressure-connected semiconductor structure according to claim 9, characterized in that: The diameter of the holes is comprised between 2 and 3 μm.

12. A series pressure-connected semiconductor structure according to claim 1, characterized in that: The porosity of the porous metal is 45-90%; The specific surface area of ​​the porous metal is 10 to 40 cm 2 / cm 3 .

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