A Micro LD device based on semiconductor laser diode and MOS integrated circuit technology

Abstract

The present invention discloses a Micro LD device based on semiconductor laser diode and MOS integrated circuit technology. The MOS integrated circuit is controlled by a computer, and the MOS integrated circuit can control the switch and strength of each semiconductor laser diode in the tiny semiconductor laser diode array, and finally form an image. Compared with Micro LED, Micro LD has greater light intensity per unit area, better directionality and better coherence, and has broader application prospects in the industrial field and display field.

Description

Technical Field

[0001] The invention relates to a Micro LD device based on semiconductor laser diode and MOS integrated circuit technology. Background Art

[0002] In recent years, Micro LED technology has made rapid progress, and its applications in the display and industrial fields have exploded. It has also received huge technical investments from large companies such as Apple, Samsung, and BOE. Micro LED technology, namely LED miniaturization and matrix technology, refers to a high-density, tiny-sized LED array integrated on a chip, such as an LED display screen where each LED pixel can be addressed and driven to light up individually. In other words, Micro LED technology is to array tiny LED chips on an integrated power supply circuit, and use the integrated power supply circuit to individually control the switch and brightness of each Micro LED particle, and finally form the required two-dimensional graphics.

[0003] Since the tiny LED particles in Micro LED emit light at 360°, the divergence angle is converged by reflective layers, reflective cups, micro lenses, etc., but the final divergence angle is still large. In practical applications, it is often necessary to generate sufficient light intensity on the surface of action. Reflective layers, reflective cups and other mechanisms that converge divergence angles will greatly reduce the light efficiency of LEDs. At the same time, practical applications also put forward higher requirements for light intensity per unit area.

[0004] To solve the above problems, the applicant of the present invention proposed the Micro LD technology based on integrated circuit power supply and tiny semiconductor laser diode array as an alternative solution for the next generation display and industrial application of Micro LED technology for the first time in the world. Micro LD technology, namely micro laser diode matrix technology, is the miniaturization and matrix technology of LD (Laser Diode). Micro LD technology refers to the integration of a high-density, tiny-sized LD array on a Micro LD chip, and makes each LD pixel addressable and individually driven to light up.

[0005] Compared with Micro LED, the light intensity per unit area of ​​Micro LD can be increased by two orders of magnitude, and the divergence angle is narrowed from the 180° light emission of LED to within 30°, and even to within 5°. Micro LD particles can use single-mode lasers, and the emitted light of each LD particle has better coherence and more consistent polarization state. Summary of the invention

[0006] The problem to be solved by the present invention is a MicroLD device based on semiconductor laser diode and MOS integrated circuit technology, which can eventually integrate a high-density micro-sized semiconductor laser diode array on a Micro LD chip, and make each semiconductor laser diode pixel addressable and individually driven to light up, thereby forming an arbitrary optical pattern of a large number of pixels. Ultimately, the optical performance of the device exceeds that of the traditional Micro LED and other light sources, other display devices, and other exposure devices.

[0007] The present invention comprises: a component (1) substrate, a component (2) MOS integrated circuit, a component (3) semiconductor laser diode array, and a component (4) external control system; the component (4) external control system can independently address and control the power supply state of each electrode of the component (22) electrode array on the component (2) MOS integrated circuit, and then independently control the light emission and extinguishing of each component (31) semiconductor laser diode by controlling the power supply of each electrode in the component (22) electrode array, and finally form a required specific laser pattern by controlling the light emission and extinguishing of each component (31) semiconductor laser diode.

[0008] The substrate material of the component (1) is silicon-based or glass-based.

[0009] The component (2) MOS integrated circuit (MOS stands for Metal Oxide Semi-conductor in Chinese), component (2) MOS integrated circuit includes PMOS (P-channel Metal Oxide Semiconductor, P-channel Metal Oxide Semiconductor), NMOS (N-channel Metal Oxide Semiconductor, N-channel Metal Oxide Semiconductor) and CMOS (Complement Metal Oxide Semiconductor, composite complementary metal oxide semiconductor) and other types.

[0010] The surface of the component (2) MOS integrated circuit contains C component (21) pins (C≥1) connected to the component (4) external control system, and contains a component (22) electrode array connected to the component (3) semiconductor laser diode array and supplies power to the component (3) semiconductor laser diode array. The component (21) pins can be at any position of the component (2) MOS integrated circuit.

[0011] The component (2) MOS integrated circuit contains a multi-layer circuit structure, and the surface of the component (2) MOS integrated circuit contains a component (22) electrode array. Each electrode in the component (22) electrode array can be independently addressed and independently control the current switch. Each electrode has its corresponding independent driving circuit, and the driving current is provided by a thin film transistor.

[0012] The electrode array of the component (22) has a total of m rows (m is an integer greater than 1) and n columns (n ​​is an integer greater than 1), with a total of m*n electrodes arranged in a rectangular shape, that is, the axis M of the m rows and the axis N of the n columns form an angle of 90 degrees.

[0013] The component (3) semiconductor laser diode array has A rows (A is an integer greater than 1) and B columns (A is an integer greater than 1) of component (31) semiconductor laser diodes, with a total of A*B component (31) semiconductor laser diodes arranged in a rectangular shape, that is, the axis of arrangement of row A and the axis of arrangement of column B form an angle of 90 degrees.

[0014] The laser emission direction of the semiconductor laser diode of the component (31) is perpendicular to the substrate plane of the component (1); the laser wavelength range is greater than or equal to 350 nanometers and less than or equal to 890 nanometers; the side length of the semiconductor laser diode of the component (31) is greater than or equal to 500 nanometers and less than or equal to 500 micrometers.

[0015] The electrode array of the component (22) has a total number of m rows m ≥ the number of A rows A of the semiconductor laser diode array of the component (3) (m ≥ A), and the electrode array of the component (22) has a total number of n columns n ≥ the number of B columns B of the semiconductor laser diode array of the component (3) (n ≥ B). That is, each semiconductor laser diode of the component (31) can be connected to one or more electrodes in the electrode array of the component (22).

[0016] The component (4) external control system is a control system that can convert graphic digital signals into required electrical signals; the component (4) external control system is connected to each electrode on the component (22) electrode array through multiple component (41) leads, and can independently control the power supply state of each electrode on the component (22) electrode array. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 A diagram of a Micro LD device based on semiconductor laser diode and MOS integrated circuit technology.

[0018] Figure 2 45° view of a MOS integrated circuit

[0019] Figure 3 Front view of a MOS integrated circuit

[0020] Figure 4 45° view of a semiconductor laser diode array

[0021] Figure 5 Front view of semiconductor laser diode array

[0022] It should be understood that after reading the contents of the present invention, those skilled in the art may make various changes or modifications to the present invention, and these equivalent forms are also within the scope defined by the claims attached to this application.

Claims

1. A Micro LD device based on semiconductor laser diode and MOS integrated circuit technology, comprising: Component substrates, component MOS integrated circuits, component semiconductor laser diode arrays, component external control systems; The power supply state of each electrode of the component electrode array on the component MOS integrated circuit can be independently addressed and controlled through the component external control system, and then the light-up and extinguishing of each component semiconductor laser diode can be independently controlled by controlling the power supply of each electrode in the component electrode array, and the desired laser pattern is finally formed through the controllable light-up and extinguishing of each component semiconductor laser diode; the surface of the component MOS integrated circuit contains C component pins, where C ≥ 1, which are connected to the component external control system, and contain component electrode arrays connected to the component semiconductor laser diode array and power the component semiconductor laser diode array; the component MOS integrated circuit contains a multi-layer circuit structure, and the surface of the component MOS integrated circuit contains parts The component electrode array comprises A rows and B columns of component semiconductor laser diodes, wherein A is an integer greater than 1, and B is an integer greater than 1. The component semiconductor laser diodes are arranged in a rectangular shape, and the axis of the row A is at an angle of 90 degrees to the axis of the column B. The laser emission direction of the component semiconductor laser diode is perpendicular to the plane of the component substrate, and the laser wavelength range is greater than or equal to 350 nanometers and less than or equal to 890 nanometers. The side length of the component semiconductor laser diode is greater than or equal to 500 nanometers and less than or equal to 500 micrometers.

2. The device according to claim 1, characterized in that The component substrate material is silicon-based or glass-based.

3. The device according to claim 1, characterized in that Component MOS integrated circuits include PMOS, NMOS and CMOS types.

4. The device according to claim 1, characterized in that The component electrode array has a total of m rows and n columns, where m is an integer greater than 1, and n is an integer greater than 1. There are a total of m*n electrodes arranged in a rectangular shape, and the axis of the m row arrangement is at an angle of 90 degrees to the axis of the n column arrangement.

5. The device according to claim 4, characterized in that m≥A, n≥B, and each component semiconductor laser diode is connected to one or more electrodes in the component electrode array.

6. The device according to claim 1, characterized in that The component external control system is a control system that converts graphic digital signals into required electrical signals. The component external control system connects each electrode on the component electrode array through multiple component leads and can independently control the power supply status of each electrode on the component electrode array.

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