System for integrated decomposition and scanning of semiconductor wafers

Abstract

Systems and methods for integrated decomposition and scanning of semiconductor wafers are described, wherein a single chamber is used to both decompose and scan the wafer of interest.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority under 35 U.S.C. §119(e) to U.S. Provisional Application No. 62 / 593,665, filed on December 1, 2017, entitled “VAPOR PHASE DECOMPSITION SYSTEM WITH CHAMBER FOR INTEGRATED DECOMPOSITION AND SCANNING” and U.S. Provisional Application No. 62 / 676,234, filed on May 24, 2018, entitled “SEMICONDUCTOR WAFER DECOMPOSITON AND SCANNING SYSTEM”. U.S. Provisional Application Nos. 62 / 593,665 and 62 / 676,234 are incorporated herein by reference in their entireties. Technical Field

[0003] The present invention relates to a chamber for decomposing and scanning the surface of a semiconductor wafer, and to a system for decomposing and scanning the surface of a semiconductor wafer. Background Art

[0004] Inductively coupled plasma (ICP) spectrometry is an analytical technique commonly used to determine trace element concentrations and isotope ratios in liquid samples. ICP spectrometry employs an electromagnetically generated partially ionized argon plasma that reaches a temperature of approximately 7,000 K. When a sample is introduced into the plasma, the high temperatures cause the sample atoms to ionize or emit light. Since each chemical element produces a characteristic mass or emission spectrum, measuring the spectrum of the emitted mass or light allows the elemental composition of the original sample to be determined.

[0005] A sample introduction system can be used to introduce a liquid sample into an ICP spectrometer (e.g., an inductively coupled plasma mass spectrometer (ICP / ICP-MS), an inductively coupled plasma atomic emission spectrometer (ICP-AES), etc.) for analysis. For example, the sample introduction system can deliver an aliquot of sample to a nebulizer, which converts the aliquot into a polydisperse spray suitable for ionization in a plasma by an ICP spectrometer. The spray produced by the nebulizer is then sorted in a spray chamber to remove larger spray particles. Upon leaving the spray chamber, the spray is introduced into the plasma for analysis by the plasma torch assembly of the ICP-MS or ICP-AES instrument. Summary of the invention

[0006] A system and method for integrated decomposition and scanning of semiconductor wafers is described, wherein a single chamber is used for decomposition and scanning of a wafer of interest. Chamber embodiments include, but are not limited to, a chamber body defining an interior region and a first hole located at a top of the chamber to receive a semiconductor wafer into the interior region of the chamber body; a flange protruding into the interior region at a middle portion of the chamber body between a top of the chamber body and a bottom of the chamber body, the flange defining a second hole in the interior region at the middle portion; a wafer support configured to hold at least a portion of the semiconductor wafer, the wafer support positionable within the interior region of the chamber body between at least a first position adjacent to the first hole and a second position adjacent to the second hole; a motor system operably coupled to the wafer support, the motor system configured to control a vertical position of the wafer support relative to the chamber body to at least a first position and a second position, the first position for accessing the semiconductor wafer by a scanning nozzle, the second position for decomposition of a surface of the semiconductor wafer; and a sprayer located between the first hole and the second hole, the sprayer configured to spray a decomposition fluid onto a surface of the semiconductor wafer when the wafer support is positioned in the second position by the motor system.

[0007] Nozzle system embodiments include, but are not limited to, a nozzle and a nozzle housing, wherein the nozzle includes a nozzle body and a nozzle cover, the nozzle body defining an inlet port fluidly connected to a first nozzle port, and defining a second nozzle port fluidly connected to an outlet port, the nozzle body being configured to receive a fluid through the inlet port and guide the fluid through the first nozzle port to guide the fluid to a surface of a semiconductor wafer, the nozzle body being configured to remove the fluid from the surface of the semiconductor wafer via the second nozzle port and guide the fluid from the second nozzle port through the outlet port, the nozzle cover extending from the nozzle body adjacent to the first nozzle port and the second nozzle port, and defining a channel arranged between the first nozzle port and the second nozzle port, the nozzle cover being configured to guide the fluid from the first nozzle port to the second nozzle port along the surface of the semiconductor wafer; the nozzle housing including a housing body, the housing body defining an interior portion and a hole, through which at least a portion of the nozzle can pass when switching between an extended position and a retracted position.

[0008] Method embodiments include, but are not limited to, spraying a decomposition fluid onto a surface of a semiconductor wafer with a sprayer; after spraying the decomposition fluid onto the surface of the semiconductor wafer with the sprayer, positioning a nozzle above the surface of the semiconductor wafer; introducing a scanning fluid to an inlet port of the nozzle, and directing the scanning fluid stream onto the surface of the semiconductor wafer via a first nozzle port; directing the scanning fluid stream along the surface of the semiconductor wafer toward a second nozzle port of the nozzle through an elongated channel of the nozzle; and removing the scanning fluid stream from the surface of the semiconductor wafer via the second nozzle port that is fluidly connected to an outlet port of the nozzle.

[0009] According to one aspect of the present application, there is provided a chamber for decomposing and scanning a surface of a semiconductor wafer, comprising:

[0010] a chamber body defining an interior region and a first hole located at a top of the chamber to receive a semiconductor wafer into the interior region of the chamber body;

[0011] a flange protruding into the interior region at a middle portion of the chamber body between a top portion of the chamber body and a bottom portion of the chamber body, the flange defining a second hole within the interior region at the middle portion;

[0012] a wafer support configured to hold at least a portion of the semiconductor wafer, the wafer support being positionable within the interior region of the chamber body between at least a first position adjacent the first aperture and a second position adjacent the second aperture;

[0013] a motor system operably coupled to the wafer support, the motor system configured to control a vertical position of the wafer support relative to the chamber body to at least a first position for access to the semiconductor wafer by a scanning nozzle and a second position for decomposition of a surface of the semiconductor wafer; and

[0014] A sprayer is positioned between the first aperture and the second aperture, the sprayer being configured to spray a decomposing fluid onto a surface of the semiconductor wafer when the wafer support is positioned in the second position by the motor system.

[0015] Preferably, the first hole and the second hole are coaxially arranged.

[0016] Preferably, the motor system is further configured to control the vertical position of the wafer support relative to the chamber body to a third position between the second aperture and the bottom of the chamber.

[0017] Preferably, the motor system is further configured to rotate the wafer support at the third position during at least one of a rinsing process of the semiconductor wafer or a drying process of the semiconductor wafer.

[0018] Preferably, the motor system is further configured to rotate the wafer support in at least one of the first position and the second position.

[0019] Preferably, the chamber body defines one or more channels between an inner surface of the chamber body and the flange, the one or more channels providing an inlet and outlet for a fluid between the first hole and the second hole.

[0020] Preferably, the chamber further comprises one or more drains fluidly coupled to the one or more channels, the one or more drains providing an outlet for fluid from the interior region of the chamber body.

[0021] Preferably, the chamber further comprises one or more drains coupled to the bottom of the chamber body.

[0022] Preferably, the chamber further includes a gas outlet port within the interior area of ​​the chamber body below the second hole; and a controller coupled to the gas source, the controller being configured to direct gas from the gas source to the gas outlet port during the time when the decomposition fluid is directed onto the surface of the semiconductor wafer through the sprayer when the wafer support is positioned in the second position.

[0023] According to another aspect of the present application, a system for decomposing and scanning a surface of a semiconductor wafer is provided, comprising:

[0024] A chamber configured to receive a semiconductor wafer, the chamber defining a first hole located at a top of the chamber to receive the semiconductor wafer into an interior region of the chamber, the chamber having:

[0025] a flange at a mid-portion of the chamber between a top portion of the chamber and a bottom portion of the chamber, the flange defining a second aperture at the mid-portion;

[0026] a wafer support configured to hold at least a portion of the semiconductor wafer, the wafer support positionable between at least a first position adjacent the first aperture and a second position adjacent the second aperture;

[0027] a motor system operably coupled to the wafer support, the motor system configured to control a vertical position of the wafer support relative to the chamber to at least the first position and the second position, and

[0028] a sprayer positioned between the first aperture and the second aperture, the sprayer being configured to spray a decomposing fluid onto a surface of the semiconductor wafer when the wafer support is positioned in the second position by the motor system;

[0029] a cover positionable between an open position and a closed position, the cover being sized and shaped to cover the first aperture when in the closed position; and

[0030] a scanning arm coupled to the nozzle, the scanning arm rotatable to position the nozzle adjacent to the semiconductor wafer when the wafer support is positioned in the first position by the motor system, and to position the nozzle outside a path of the cover from the open position to the closed position when the wafer support is positioned in the second position by the motor system.

[0031] Preferably, the atomizer is at least partially disposed within a wall of the chamber.

[0032] Preferably, when the wafer support is in the second position, the cover is in the closed position to prevent fluid from passing through the first aperture.

[0033] Preferably, when the wafer support is in the first position, the cover is in the open position to provide access to the semiconductor wafer by the nozzle.

[0034] Preferably, the system further comprises an irrigation trough having an elongated channel receiving the nozzle, the elongated channel being configured to be coupled to an irrigation fluid source to introduce irrigation fluid into the elongated channel to rinse the nozzle.

[0035] Preferably, the rinse tank comprises a second elongated channel receiving the nozzle, the elongated channel being configured to be coupled to a drying gas source to introduce a drying gas fluid into the elongated channel to dry the nozzle.

[0036] Preferably, the system further comprises a gas outlet port within the interior region of the chamber below the second hole; and a controller coupled to a gas source, the controller being configured to direct gas from the gas source to the gas outlet port during the time when the decomposition fluid is directed to the surface of the semiconductor wafer by the sprayer when the wafer support is positioned in the second position.

[0037] Preferably, the motor system is further configured to control the vertical position of the wafer support relative to the chamber to a third position between the second aperture and the bottom of the chamber.

[0038] Preferably, the motor system is further configured to rotate the wafer support at the third position during at least one of a rinsing process of the semiconductor wafer or a drying process of the semiconductor wafer.

[0039] Preferably, the motor system is further configured to rotate the wafer support in at least one of the first position and the second position.

[0040] Preferably, the nozzle has a nozzle body, the nozzle body defining an inlet port in fluid communication with a first nozzle port, and defining a second nozzle port in fluid communication with an outlet port, the nozzle body being configured to receive a decomposition fluid through the inlet port and direct the fluid through the first nozzle port to direct the fluid to the surface of the semiconductor wafer, the nozzle body being configured to remove the fluid from the surface of the semiconductor wafer via the second nozzle port and direct the fluid from the second nozzle port through the outlet port; and a nozzle cover extending from the nozzle body adjacent to the first nozzle port and the second nozzle port and defining a channel at least partially disposed between the first nozzle port and the second nozzle port, the nozzle cover being configured to direct the fluid from the first nozzle port to the second nozzle port along the surface of the semiconductor wafer.

[0041] This Summary is provided to introduce a selection of concepts in a simplified form that are further described below in the Detailed Description. This Summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] The detailed description is described with reference to the accompanying drawings.The use of the same reference numbers in different instances in the description and the drawings may indicate similar or identical objects.

[0043] Figure 1A is an isometric view of a system for integrated decomposition and scanning of semiconductor wafers in accordance with an embodiment of the present invention.

[0044] Figure 1B yes Figure 1A An isometric view of a system with a semiconductor wafer positioned within a chamber.

[0045] Figure 2A yes Figure 1A A cross-sectional view of the system with a semiconductor wafer in a scanning position.

[0046] Figure 2B yes Figure 1A A cross-sectional view of a system with a semiconductor wafer in a disassembled position.

[0047] Figure 2C yes Figure 1A A cross-sectional view of a system in which a semiconductor wafer is located in a rinsing position.

[0048] Figure 3 According to an embodiment of the present invention Figure 1A Isometric view of a portion of the chamber body of the system.

[0049] Figure 4 yes Figure 1A An isometric view of a system in which a scanning arm positions a nozzle above the surface of a semiconductor wafer at a scanning position.

[0050] Figure 5 yes Figure 1A A partial isometric view of the system with the scanning arm located at the flushing station for the nozzles.

[0051] Figure 6 is a top view of a scan arm according to an embodiment of the present invention, the scan arm being located in a first position above a semiconductor wafer during a scanning process of the semiconductor wafer and in a subsequent second position above the semiconductor wafer.

[0052] Fig. 7A is an isometric view of a nozzle for a semiconductor wafer decomposition and scanning system according to an embodiment of the present invention.

[0053] Figure 7B yes Fig. 7A Top view of the nozzle.

[0054] Figure 7C yes Fig. 7A Bottom view of the nozzle.

[0055] Fig.7D yes Figure 7B A cross-sectional view of the nozzle taken along 7D-7D.

[0056] Fig. 8A is a partial cross-sectional view of a nozzle mounting assembly for a system for integrated decomposition and scanning of semiconductor wafers according to an embodiment of the present invention.

[0057] Figure 8B yes Fig. 8A A partial cross-sectional view of a nozzle mounting assembly in contact with a surface.

[0058] Figure 8C yes Fig. 8A A partial cross-sectional view of the nozzle mounting assembly raised from the surface and leveled.

[0059] Fig. 9A is a schematic diagram of a fluid handling system for a semiconductor wafer decomposition and scanning system according to an embodiment of the present invention.

[0060] Fig. 9B According to an embodiment of the present invention Fig. 9A Schematic diagram of the fluid handling system in the chemical blank loading configuration.

[0061] Fig. 9C According to an embodiment of the present invention Fig. 9A Schematic diagram of a fluid handling system in a chemical injection configuration.

[0062] Fig.9D According to an embodiment of the present invention Fig. 9A Schematic diagram of a fluid handling system in a nozzle loop loading configuration.

[0063] Fig.9E According to an embodiment of the present invention Fig. 9A Schematic diagram of a fluid handling system in a nozzle-loaded configuration.

[0064] Fig.9F According to an embodiment of the present invention Fig. 9A Schematic diagram of a fluid handling system in a recovery configuration.

[0065] Fig.10 is a schematic diagram of a nebulizer fluid handling system for a semiconductor wafer decomposition and scanning system according to an embodiment of the present invention. DETAILED DESCRIPTION

[0066] Overview

[0067] Determination of the concentration or amount of trace elements in a sample can provide an indication of sample purity, or the acceptability of the sample for use as a reagent, reactive component, etc. For example, in a particular production or manufacturing process (e.g., mining, metallurgy, semiconductor manufacturing, pharmaceutical processing, etc.), tolerances for impurities can be very stringent, e.g., on the order of a few parts per billion. For semiconductor wafer processing, wafers are tested for impurities, such as metallic impurities, which can degrade the performance of the wafer or render the wafer inoperable due to shortened carrier lifetimes, dielectric breakdown of wafer components, etc.

[0068] Vapor phase decomposition (VPD) of wafers and subsequent scanning is a technique for analyzing wafer components to determine if metallic impurities are present. Conventional VPD and scanning techniques have limited throughput for facilitating the processing and scanning of silicon wafers for impurity analysis. For example, systems typically employ separate chambers for the VPD process and the scanning process. In the VPD chamber, silicon dioxide and other metallic impurities present on the surface are contacted with vapor (e.g., hydrofluoric acid (HF), hydrogen peroxide (H2O2), combinations thereof) and removed from the surface as vapor (e.g., as silicon tetrafluoride (SiF4)). The processed wafer is transported to a separate chamber for scanning, where droplets are directed to the surface of the processed wafer to collect residues after the decomposition vapor reacts with the wafer. The scanning process may include holding droplets on the wafer surface with a scanning head and rotating the wafer while moving the scanning head or keeping the scanning head stationary to move the droplets on the surface. After multiple rotations of the wafer, the droplets interact with the desired surface area of ​​the wafer to absorb any residues from the contact surface after decomposition. However, conventional wafer processing techniques require a significant amount of time and equipment to process the wafers, such as by moving the wafers from a decomposition chamber to a scanning chamber to a rinse chamber during processing, using scanning nozzles with limited droplet interaction with the wafer surface during scanning (i.e., requiring multiple rotations of the wafer to allow the droplets to interact with the entire surface area or a portion thereof), etc. In addition, such processing of the wafers may potentially expose technicians or other individuals to toxic hydrofluoric acid, or may increase the risk of environmental contamination of the wafers during transfer of the wafers between various processing chambers, which also requires a relatively large physical processing footprint to facilitate the equipment and requires a transfer mechanism between the equipment.

[0069] Thus, the present invention relates, at least in part, to systems and methods for semiconductor wafer decomposition and scanning, wherein a chamber facilitates decomposition and scanning of semiconductor wafers using a single chamber footprint, and wherein a nozzle directs a fluid flow directed by a nozzle shroud along a surface of the semiconductor wafer between a first port of the nozzle and a second port of the nozzle, the nozzle shroud defining an elongated channel directing the flow along the surface of the wafer. The chamber defines at least two apertures through which the semiconductor wafer can pass by operation of a wafer support and an associated motor system, with flanges to provide for decomposition and rinsing within the chamber while controlling fluid movement within the chamber, such as for drainage and preventing cross contamination. The motor system controls the vertical position of the wafer support relative to the chamber body to move the semiconductor within the chamber body, with positioning above the chamber body supported by the motor system to load and unload the wafer, provide access to the nozzle, etc. The chamber also incorporates a sprayer to direct the decomposition fluid atomized by the sprayer directly onto the surface of the semiconductor wafer, while the wafer support positions the semiconductor wafer within the interior region of the chamber. The chamber can be combined with a cover that can be opened and closed relative to the chamber to, for example, isolate the interior area of ​​the chamber from the area outside the chamber during the decomposition process. The nozzle can be positioned relative to the chamber by a rotatable scanning arm, wherein the nozzle can be positioned away from the chamber to facilitate lid closure (e.g., during the decomposition process) or to facilitate rinsing the nozzle at a rinsing station. In addition, the rotating scanning arm can position the nozzle above the semiconductor wafer during the scanning process. The system can use a fluid handling system including a switchable selector valve and a pump to control the introduction of fluid from the wafer surface to the nozzle for preparing blanks, for rinsing system components, etc. After or during the scanning process, the scanning fluid can be collected and sent to an analytical device (e.g., an ICPMS device) for analytical determination of the scanning fluid components.

[0070] Exemplary Embodiments

[0071] Figures 1A to 10 Aspects of a system for integrated decomposition and scanning of semiconductor wafers ("system 100") according to various embodiments of the present invention are shown. System 100 generally includes a chamber 102, a scanning arm assembly 104, and a fluid handling system 106 (e.g., at least partially within a FIG. 9A to FIG. 10100 ) to at least facilitate the process of disassembling and scanning a semiconductor wafer 108 (sometimes referred to herein as a "wafer") by directing a disassembling fluid to the wafer and by directing a scanning fluid to and removing the scanning fluid from the surface of the wafer 108. The chamber 102 provides a single chamber footprint for an environment for each of wafer disassembly and wafer scanning, and includes a wafer support 110 for holding the wafer 108 and a motor system 112 for controlling the vertical position of the wafer support 110 relative to the chamber 102 (e.g., within the chamber 102, above the chamber 102, etc.) to position the wafer 108 for disassembly and scanning processes or during other processes of the system 100. The motor system 112 additionally provides rotational control of the wafer support 110 to rotate the wafer 108 during various processes of the system 100, and provides rotational and vertical control of the scan arm assembly 104 to bring the nozzle of the scan arm assembly 104 to a position above the wafer 108 during the scanning process and into a rinse station 114 for nozzle cleaning. In an embodiment, the wafer support 110 includes a vacuum table to keep the wafer 108 fixed relative to the wafer support 110 , for example, during movement of the wafer support 110 .

[0072] The chamber 102 includes a chamber body 116 that defines an interior region 118 that receives the wafer 108 for processing. A flange 120 protrudes into the interior region 118 between a top 122 of the chamber body 116 and a bottom 124 of the chamber body 116. In an embodiment, the chamber body 116 defines a first hole 126 at the top 122 through which a wafer can be received in the interior region 118. In an embodiment, the flange 120 defines a second hole 128 at an intermediate portion of the interior region 118 between the top 122 and the bottom 124 (e.g., between the first hole 126 and the bottom 126). Figure 1A During the exemplary operation shown, the system 100 can receive a semiconductor wafer 108 onto the wafer support 110, for example, by operating a robotic arm 50 that selects a wafer 108 from a front end unified pod (FOUP) or other location and directs the selected wafer 108 onto the wafer support 110 (e.g., centered on the wafer support 110). The motor system 112 can position the wafer support 110 at, above, or near the top 122 of the chamber body 122 to allow the robotic arm 50 to access the wafer support 110 to place the wafer 108 on the wafer support 110. For example, the wafer support 110 can be positioned in a first position adjacent to the first aperture 126 during loading of the wafer 108 (e.g., Figure 2A ). In an embodiment, the first position of the wafer support 110 is positioned outside of the interior region 118 (eg, extending through the first aperture 126 ) to receive the wafer 108 .

[0073] The system 100 may include a cover 130 to isolate the interior region 118 from the exterior region 132 to facilitate wafer decomposition while limiting exposure of the decomposition fluid to the exterior region 132. For example, the cover 130 may have a size and shape that covers the first hole 126 when positioned over the first hole 126. The cover 130 may be positioned in an open position (e.g., Figure 1A ) and the closed position (e.g. Figure 1B 126). The open position may be employed during wafer loading to provide access to the robotic arm during a scanning process, during a wafer unloading process, etc. In an embodiment, when the wafer support 110 is in a first position adjacent to the first aperture 126, the lid 130 is in an open position to provide access to the wafer 108 by a nozzle of the scanning arm assembly 104. The closed position may be employed during a wafer decomposition process to prevent the decomposition fluid from leaving the chamber 102 through the first aperture 126. In an embodiment, at least a portion of the lid 130 contacts the chamber body 116 to isolate the interior region 118 from the exterior region 132. The wafer 108 is moved within the interior region 118 by controlling the vertical position of the wafer support 110 to a second position by the motor system 112. For example, before or during the movement of the lid 130 from the open position to the closed position, the motor system 112 moves the wafer support 110 within the interior region 118 to the second position. In an embodiment, the lid 130 is positioned adjacent to the chamber body 116 and is rotatably coupled to the base 134 via a lid arm 136 to transition the lid 130 between an open position and a closed position.

[0074] After the wafer 108 is introduced to the wafer support 110, the system 100 can be converted to a disassembly configuration to facilitate disassembly of one or more surfaces or edges of the wafer 108. For example, the motor system 112 moves the wafer support 110 from a first position to a second position to position the wafer 108 adjacent to the second hole 128 of the flange 120 (e.g., as shown in FIG. 1 ). Figure 1B and 2B126 and the second aperture 128 to spray the decomposition fluid onto the surface of the wafer 108 when the wafer support 110 is positioned in the second position by the motor system 112. Thus, the decomposition fluid is sprayed directly into the chamber 102 by the sprayer 138. The decomposition fluid may be supplied to the sprayer 138 via one or more fluid lines from the fluid handling system 106, such as through a conduit 140 into a front chamber 142 that houses at least a portion of the sprayer 138. In an embodiment, at least a portion of the sprayer 138 is at least partially disposed within a wall of the chamber 102. For example, the chamber body 116 may define an aperture 144 between the interior region 118 and the front chamber 142, at which an outlet of the sprayer 138 may distribute the atomized decomposition fluid into the interior region between the first aperture 126 and the second aperture 128 to cover and decompose at least an upper surface 146 of the wafer 108.

[0075] In embodiments, the chamber 102 induces pressure beneath the wafer 108 during decomposition to prevent the decomposition fluid from passing between the edge of the wafer 108 and the flange 120. For example, the chamber 102 may include a gas outlet port 148 positioned within the interior region 118 between the second aperture 128 of the chamber body 116 and the bottom 124 to introduce a gas or other fluid into the interior region 118 during the introduction of the decomposition fluid from the sprayer 138 into the interior region 118. The gas from the gas outlet port 148 may be introduced at a pressure greater than the pressure of the atomized decomposition fluid supplied from the sprayer 138 to provide gas to flow upward through the second aperture 128 (e.g., between the edge of the wafer 108 and the flange 120) to prevent the decomposition fluid from passing beneath the wafer 108. In embodiments, the system 100 includes a controller coupled to the gas source to introduce gas from the gas source to the gas outlet port 148 during the introduction of the decomposition fluid onto the surface 146 of the wafer 108 by the sprayer 138 when the wafer support 110 is in the second position. For example, gas may be supplied to gas outlet port 148 via a fluid line through conduit 140 and antechamber 142. In an embodiment, when atomized disintegration fluid is present in interior region 118, motor system 112 causes rotation of wafer support 110 to spin wafer 108 during the disintegration process.

[0076] The chamber 102 can facilitate the removal of fluids from the interior region 118 through one or more passages in the chamber body 116 in fluid communication with one or more drains, wherein such fluids may include, for example, excess decomposition fluid, silicon tetrafluoride (SiF4), gas supplied by the gas outlet port 148, water, water vapor, flushing fluid, or other fluids. For example, the chamber body 116 may include a base portion 200, a middle portion 202, and a top portion 204 stacked on top of each other (e.g., via interlocking grooves), Figure 2B ). The base 200 may define one or more drains 206 (e.g., drains 206A and 206B) that provide an outlet from the interior region 118 of the chamber 102 via a drain conduit to one or more drain containers (not shown). In an embodiment, the drain 206A is fluidly connected to a channel in the chamber body 116 to provide for fluid located between the first hole 126 and the second hole 128 to enter the drain 206A. For example, the middle portion 202 may define one or more channels 208, at least a portion of which extends through the middle portion to be vertically aligned with at least a portion of one or more channels 210 formed by the base 200. The channels 208 may be positioned between an inner surface 212 of the chamber body 116 (e.g., the top 204, the middle portion 202, or a combination thereof) and the flange 120 to allow fluid in the interior region held between the lid 130 and the second hole 128 or the surface of the wafer 108 to flow into the channels 208, into the channels 210, and out of the drain 206A. In an embodiment, drain 206B allows flushing fluid or other fluid to exit interior region 118 of chamber 102 (hereinafter referred to as Figure 2C describe).

[0077] After decomposition of the wafer 108, the system 100 can be converted to a scanning configuration to allow the scan arm assembly 104 to access the surface 146 of the wafer 108 without transferring the wafer 108 to a separate scanning system. To convert to the scanning configuration, the motor system 112 can position the wafer support 110 from a second position adjacent the second hole 128 to a first position adjacent the first hole 126, or otherwise closer to the top 122 of the chamber body 116, to allow access to the surface 146 of the wafer 108 by the scan arm assembly 104. The scan arm assembly 104 generally includes a rotatable arm support 300 coupled to a nozzle housing 302 that supports a nozzle 304 that is configured to direct a scanning fluid to the surface 146 of the wafer 108 and to recover the scanning fluid from the surface 146 of the wafer 108. The motor system 112 can control the rotation of the rotatable arm support 300, the vertical positioning of the rotatable arm support 300, or a combination thereof to move the nozzle housing 302 and the nozzle 304 from one or more positions at the flushing station 114 (e.g., Figure 2A) is positioned adjacent to or above the wafer 108 at one or more locations (e.g., as shown in Figure 4 ). 7A to 7D An exemplary embodiment of the nozzle 304 is further described. In an embodiment, the rotatable arm support 300 rotates or otherwise moves the nozzle 304 to position the nozzle 304 adjacent to the wafer 108 when the wafer support 110 is positioned at the first position by the motor system 112 and to position the nozzle 304 out of the path of the cover 130 from the open position to the closed position when the wafer support 110 is positioned at the second position by the motor system 112.

[0078] The nozzle 304 is positioned near or above the wafer 108 (e.g., Figure 4 ), the fluid handling system 106 can control the introduction of the scanning fluid to and from the nozzle 304 to facilitate the scanning process of the surface 146 of the wafer 108. 7A to 7D, shows an exemplary embodiment of the nozzle 304. The nozzle 304 is configured to transmit a fluid stream across the surface 146 of the wafer 108, which can cover a larger surface area of ​​the wafer 108 in a shorter time than moving a spot-sized droplet on the wafer 108. The fluid stream is directed on the surface 146 of the wafer 108 by the nozzle 304 to controllably scan a desired surface area of ​​the wafer 108. In an embodiment, the nozzle 304 directs the fluid stream over substantially the entire surface 146 in a single rotation of the wafer 108. In an embodiment, a wedge-shaped portion of the surface 146 (e.g., a sector of the wafer 108 or a portion thereof) can be scanned in a small portion of a single rotation of the wafer 108. The nozzle 304 includes a nozzle body 500, which defines an inlet port 502, an outlet port 504, a first nozzle port 506, a second nozzle port 508, and a nozzle cover 510. The nozzle 304 may also include one or more mounting holes to mount the nozzle 304 within the nozzle housing 302. The inlet port 502 and the outlet port 504 receive fluid lines to direct fluid into and out of the nozzle 304 during operation of the system 100. For example, the nozzle 304 receives fluid through the action of a first pump (e.g., a syringe pump) that pushes fluid from a holding line or loop (e.g., a sample holding loop) into the nozzle 304, where the fluid is directed into the inlet port 502 and through a channel 503 in the nozzle body 500 that fluidically connects the inlet port 502 and the first nozzle port 502. The fluid is then deposited onto the surface 146 of the wafer 108 through the first nozzle port 506. The fluid is directed along the surface 146 of the wafer 108 as a continuous fluid stream via a channel 512 defined between the nozzle cover 510 and the nozzle body 500, where the fluid is subsequently removed from the surface 146 of the wafer 108. For example, fluid may be removed from the surface 146 by the action of a second pump (e.g., a syringe pump) that pulls fluid through the second nozzle port 508 at the end of the channel 512 that is away from the first nozzle port 506 through fluid communication between the outlet port 504 and the second nozzle port 508 that passes through the nozzle body 500. In this way, the fluid is allowed to contact the wafer 108 during the transfer from the first nozzle port 506 to the second nozzle port 508. The channel 512 allows a certain volume of fluid to travel on the wafer with the assistance of the nozzle cover 510. In an embodiment, the channel 512 has a volume of approximately 300 μL. However, the volume of the channel 512 is not limited to 300 μL and may have a volume less than 300 μL and a volume greater than 300 μL. For example, the volume of the channel 512 may depend on the size of the wafer 108 being processed by the system 100 to provide a desired amount of fluid (e.g., scanning fluid) to the surface 146. The length of the channel 512 may be selected based on the size of the wafer 108 to be processed by the system 100 , and in an embodiment, the channel 512 has a length that approximates the radius of the wafer 108 .In an embodiment, the length of the channel 512 can be from approximately 20 mm to approximately 500 mm). For example, the length of the channel 512 can be approximately 150 mm (e.g., to accommodate a 300 mm diameter wafer), approximately 100 mm (e.g., to accommodate a 200 mm diameter wafer), approximately 225 mm (e.g., to accommodate a 450 mm diameter wafer).

[0079] The nozzle cover 510 extends from the nozzle body 500 adjacent to each of the first nozzle port 506 and the second nozzle port 508 and defines a passage 512 between the nozzle cover 512 and the nozzle body 500 between the first nozzle port 506 and the second nozzle port 508. The nozzle cover 510 can be further extended to include each of the first nozzle port 506 and the second nozzle port 508 within the passage 512, so that the nozzle cover 510 encloses the first nozzle port 506 and the second nozzle port 508 in the nozzle cover 510 (e.g., as Figure 7C 304). In an embodiment, the nozzle body 500 includes substantially opposed side walls 514 that span the nozzle 304 longitudinally. The opposed side walls 514 each include a narrowed wall portion 516 that couples or otherwise extends to provide an opposed portion 518. In an embodiment, the opposed portion 518 is substantially vertical to form at least a portion of the nozzle cover 510. The nozzle 304 can be formed from a single integral piece, or the portions of the nozzle 304 can be formed separately and fused or otherwise coupled together. In an embodiment, the nozzle 304 is formed from chlorotrifluoroethylene (CTFE), polytetrafluoroethylene (PTFE), or a combination thereof.

[0080] The channel 512 of the nozzle 304 has an elongated shape with rounded ends 513A and 513B. The rounded ends can promote excellent fluid handling characteristics, such as by providing more consistent delivery and uptake of fluid through the nozzle 304, as compared to angled ends. In an embodiment, the first nozzle port 506 (where fluid is dispensed from the nozzle 304 onto the wafer 108) is positioned tangential to the edge of the rounded end 513A of the channel 512. Such positioning can help to cleanly interrupt the flow of fluid from the first nozzle port 506 after all of the fluid has been introduced to the wafer 108, while avoiding segmentation of the fluid on the surface of the wafer 108. In an embodiment, the rotatable arm support 300 rotates the nozzle housing 302 so that the rounded end 513A of the nozzle 302 extends over the edge of the wafer 108 (e.g., after a scanning process) to facilitate uptake of the fluid flow through the second nozzle port 508 via operation of the fluid handling system 106. For example, as Figure 6As shown, the nozzle is positioned at a first position (e.g., scanning position) at a first time (t1) whereby the channel 512 is positioned above the surface 146. The rotatable arm support 300 then rotates the nozzle housing 302 at a second time (t2) so that the rounded end 513A extends past the edge of the wafer 108 (e.g., overhanging the edge) in a second position rotated approximately 7 degrees from the first position. In an embodiment, the second nozzle port 508 is positioned approximately at the center of the rounded end 513B away from the first nozzle port 506. Positioning the second nozzle port 508 at the center of the rounded end 513B, as opposed to being tangential to the edge of the rounded end 513B, can facilitate fluid uptake while helping to maintain the fluid flow on the surface 146 without breaking up the fluid flow to precisely control the movement of the fluid on the surface 146 of the wafer 108.

[0081] The positioning of the nozzle 304 above the surface 416 of the wafer 108 can affect the amount of fluid supported within the channel 512 during the scanning process. The system 100 may include a zeroing process to ensure that a desired height above the surface 416 is achieved before directing the scanning fluid to the nozzle to facilitate the desired amount of fluid being directed by the nozzle cover 510 along the surface 146 of the wafer 108. FIG. 8A to FIG. 8C An exemplary zeroing process is shown, in which aspects of the scan arm assembly 104 according to various embodiments of the present invention are shown. The scan arm assembly 104 facilitates alignment of the nozzle 304 relative to the wafer 108 so that the first nozzle port 506 and the second nozzle port 508 are flush with the surface 146 of the wafer 108 to which fluids are to be applied and removed. The system 100 can undergo an alignment or leveling process for each wafer 108 processed by the system 100 (e.g., between a scan of a first wafer removed from the chamber 102 and a scan of a second wafer introduced into the chamber 102) or as needed to ensure that the nozzle 304 is flush with the wafer 108 held by the chamber 102, such as before the next scanning process. Typically, the nozzle 304 is movably coupled to the nozzle housing 302 to allow the nozzle 304 to have a range of movement relative to the nozzle housing 302 while being supported by the nozzle housing 302. The nozzle housing 302 defines an aperture 520 that is configured to be aligned with the nozzle 304 when the nozzle is in an extended position (e.g., Fig. 8A ) and the retracted position (e.g. Figure 8B and Figure 8C520). When the nozzle 304 is converted between the extended portion and the retracted portion, at least a portion of the nozzle 304 can pass through the hole. For example, the top of the nozzle 304 can be positioned within the nozzle housing 302, wherein when the nozzle 304 is converted from the extended portion to the retracted portion, additional portions of the nozzle 304 can be introduced into the interior of the nozzle housing 302 via the hole 520. For example, when the nozzle 304 is positioned to contact the zeroing surface 522, the nozzle cover 128 can contact the surface 522 to push the nozzle 304 into a leveled position relative to the surface 522. The nozzle housing 302 can then be actuated to lock the position of the nozzle 304 in place to keep the nozzle 304 flush with the surface 522 when the nozzle 304 is lifted from the surface 522 (e.g., to the scanning position). The nozzle housing 302 may include a mechanical, electrical, or electromechanical locking device to releasably fix the nozzle 304 relative to the nozzle housing 302. In an embodiment, the surface 522 includes the surface 146 of the wafer 108, the surface 110 of a wafer support (e.g., before the wafer 108 is loaded onto the wafer support 110), the surface of the rinsing station 114, or another surface having a structure consistent with the leveling characteristics of the semiconductor wafer, so that when the nozzle 304 contacts the surface 522, the nozzle cover 128, the first nozzle port 506, the second nozzle port 508, etc. will be properly positioned relative to the wafer 108.

[0082] In an embodiment, the nozzle mounting assembly 500 includes a nozzle housing 302 to couple the nozzle 304 to the rotatable arm support 300. The nozzle 304 can be coupled to the nozzle housing 302 via a coupler 524, which defines a hole 526 that interacts with a protrusion 528 of the nozzle housing 302. The protrusion 528 can include a fastener, a pin, or other structure having a width or diameter that is smaller than the width or diameter of the hole 526, so that when the scanning arm assembly 104 is in a first state (e.g., a leveled state), the top of the hole 526 rests on the protrusion 528, which provides the nozzle 304 with respect to the nozzle housing 302 via the coupler 524. The protrusion 528 can be provided with a lower or extended position (e.g., as shown in FIG. 1 ) relative to the nozzle housing 302. Fig. 8A The system 100 may be configured to lower the nozzle housing 302 by causing the rotatable arm support 300 to bring the nozzle 304 into contact with the surface 522 (e.g., as shown in FIG. Figure 8B526). For example, as the nozzle 304 contacts the surface 522, the coupler 524 is pushed upward relative to the protrusion 528 so that the protrusion 528 does not support the coupler 524 via contact with the top of the hole 526. After the nozzle 304 contacts the surface 522, the nozzle 304 is in the retracted position, and the system 100 can activate the locking structure 530 (e.g., integrated in the nozzle housing 302) to fix the position of the nozzle 304 relative to the nozzle housing 302. For example, the coupler 524 can include a ferrous material to be fixed by the magnetic field generated by the electromagnet incorporated in the locking structure 530. Although the electromagnet is shown as part of the locking structure 530 in the exemplary embodiment, other locking structures can be used, including but not limited to pneumatic solenoid actuators, mechanical locks, electromechanical locks, etc.

[0083] The nozzle housing 302 may include a sensor to monitor the position of the nozzle 304 relative to the nozzle housing 302, for example, to determine whether the nozzle 304 is in an extended state, in a retracted state, or in a different position. For example, in an embodiment, the nozzle housing 302 includes a sensor 532 to detect the presence or absence of the coupling 524 and generate or stop generating a signal received by a controller of the system 100. The sensor 532 may include an optical switch with a light source on a first side of the coupling 524 and a detector on a second, opposite side of the coupling 524. The coupling 524 may include an indexing cutout, a portion of which passes between the light source and the detector of the sensor 532. When the nozzle 304 is in the extended position (e.g., the locking structure 520 is not engaged), light from the light source passes through the indexing cutout of the coupling 524 and is detected by the detector on the other side of the coupling 524. The sensor 532 then outputs a signal or stops outputting a signal indicating that light is detected, which indicates to the system 100 that the nozzle 304 is in the extended position. When the nozzle 304 is in the retracted position, for example after being leveled on the surface 522, the body of the coupler 524 is positioned between the light source and the detector of the sensor 532, blocking light from reaching the detector. The sensor 532 will output a signal or cease to output a signal indicating that no light source is detected. This signal or lack of a signal indicates to the system 100 that the nozzle 304 is in the retracted position (e.g., supported in the nozzle housing 302 by the locking structure 530). The operation of the sensor 532 can provide a system check to ensure that the nozzle 304 is still in the retracted and leveled position after a period of operation. Changes in the output from the sensor 532 can indicate that a re-leveling process would be appropriate, that the locking structure 530 should be evaluated, etc. Alternatively, the indexing cutout can be repositioned so that when the nozzle 304 is in the retracted position, the detector is aligned with the indexing cutout, and when the nozzle 304 is in the extended position, the body of the coupler 524 blocks light.

[0084] When the nozzle 304 is leveled relative to the surface 522 and locked in place via the locking structure 530, the rotatable arm support 300 can lift the nozzle 304 from the surface 522 (e.g., as shown in FIG. Figure 8C 304 while maintaining the nozzle 304 in the leveled position. The rotatable arm support 300 can then position the nozzle 304 in a scanning position or otherwise move the nozzle 304 (e.g., to allow the wafer 108 to be positioned on the wafer support 110 if the surface 522 used to level the nozzle 304 is the support 106).

[0085] The nozzle housing 302 may include one or more sensors to facilitate the introduction of fluid to and removal of fluid from the nozzle 304. For example, in an embodiment, the nozzle housing 302 includes one or more sensors (sensors 534A and 534B are shown) adjacent to one or more of the inlet port 502 and the outlet port 504 of the nozzle 304 to control the operation of the fluid handling system 106 to control the flow of fluid into and out of the nozzle 304. The sensors 534A and 534B may include optical sensors, capacitive sensors, ultrasonic sensors, or other sensors, or combinations thereof, to sense the flow or absence of liquid within a fluid line of the system 100. For example, the system 100 may include a fluid line from a fluid handling system coupled to fluid line couplers 536A and 536B, through which the sensors 534A and 534B, respectively, may detect the presence or absence of fluid therein. The output signal or the absence thereof may control the operation of one or more components of the fluid handling system 106, including but not limited to a pump for introducing fluid to or removing fluid from the nozzle 304.

[0086] The system 100 facilitates a rinsing process for the wafer 108 and the nozzle 304, for example, after a scanning process. Figure 2C , the chamber 102 is shown in a flushing configuration for facilitating flushing of the wafer 108. To transition to the flushing configuration, the motor system 112 can position the wafer support 110 from a first position (e.g., a scanning position) or other position adjacent the first hole 126 to a flushing position between the flange 120 and the bottom 124 of the chamber body 116. A flushing fluid can be introduced to the wafer 108, such as through a flushing port on the nozzle housing 302 or a flushing port otherwise disposed in the system 100, whereupon the motor system 112 can rotate the wafer 108 to cause removal of the flushing fluid. The flushing fluid can then impact the interior of the chamber body 116 and flow to the exhaust portion 206B to exit the interior region 118 of the chamber 102. To clean the nozzle 304, the rotatable arm support 300 can position the nozzle 304 relative to one or more slots of the flushing station 114. For example, the flushing station 114 can include a first slot 115A having an elongated channel (e.g., such as Figure 5), the irrigation fluid is introduced from the irrigation fluid source into the elongated channel to interact with the nozzle cover 510, the channel 512, or other parts of the nozzle 304. The nozzle 304 is Figure 1A and Figure 1B The rinse station 114 is shown as being located in the first slot 115A. The rinse station 114 may also include a second slot 115B having an elongated channel coupled to a dry gas source (e.g., nitrogen or other inert gas) to introduce the dry gas into the elongated channel to impact the nozzle 304. The nozzle 304 is Figure 5 115B is shown in the second slot 115B.

[0087] Now refer to FIG. 9A to FIG. 10 , an exemplary fluid handling system 106 of the system 100 is described according to various embodiments of the present invention. For example, the fluid handling system 106 can facilitate the preparation of chemical blanks of chemicals employed by the system 100 for analysis by the analytical system, can facilitate the preparation of decomposition fluids as needed and according to desired ratios for use in the chamber 102, can facilitate the preparation of scanning fluids as needed and according to desired ratios for use in the chamber 102, and combinations thereof. As shown, the fluid handling system 106 includes a pump system, which includes pumps 600, 602, 604, 606, 608, 610 and 612 to draw and push fluids through the fluid handling system to interact with other components of the system 100 (e.g., nozzle 304), analytical systems, etc. The pump system is shown in combination with a syringe pump, however the system 100 can employ different pump types or systems, combinations of pump types or systems, etc. An exemplary configuration of the fluid handling system 106 is shown in FIG. Fig.10 108 to introduce a decomposition fluid to the sprayer 138 of the chamber 102 during the decomposition process of the wafer 108. With the valve 616 in a first configuration and the valve 618 in a first configuration, the pump 612 can draw hydrofluoric acid (HF) or other (one or more) decomposition fluids from the decomposition fluid source 613 into the holding line (e.g., the decomposition fluid holding loop 614). In a second configuration of the valve 616, gas from the gas source 619 can be introduced into the fluid line holding the decomposition fluid to provide a barrier between the working fluid used to push the decomposition fluid to the sprayer 138. In the second configuration of the valve 618, the pump 612 can draw a working solution (e.g., deionized water or other fluid), whereby the valve 618 can be switched to the first position and the valve 616 can be switched to the third configuration to provide fluid communication between the pump 612 and the sprayer 138, whereby the pump 612 pushes the working solution against (e.g., via any intermediate air gaps) the decomposition fluid held in the decomposition fluid holding loop 614 to introduce the decomposition fluid to the sprayer 138. After decomposition of the wafer 108 , the system 100 may scan the wafer 108 for determination of impurities.

[0088] Reference Fig. 9A , fluid handling system 106 is shown in an exemplary chemical loading configuration. Pumps 604, 606, and 608 draw chemicals from chemical sources 620, 622, and 624, respectively, via valve 626 in a first valve configuration. The chemicals may include, for example, hydrofluoric acid (HF), hydrogen peroxide (H2O2), deionized water (DIW), or other fluids. In a second valve configuration (e.g., valve 626 is in a second valve configuration) of valve 626, the chemical is drawn from a source 620, 622, and 624, respectively. Fig. 9A 624 ), each of the pumps 604, 606, and 608 is fluidly coupled to a fluid line connector (e.g., manifold 628 or other connector) whereby the chemicals drawn by each pump are combined and allowed to mix. The combined fluid is directed to valve 630, which is in a first valve configuration to direct the combined fluid to a holding line (e.g., holding loop 632). In an embodiment, the system controller independently controls the operation of each of the pumps 620, 622, and 624 to control the flow rate of each fluid processed by the corresponding pump, thereby providing a controlled composition of the mixed fluid directed to the holding loop 632 after mixing. In an embodiment, a first fluid mixture can be used to interact with the wafer 108 during a first scanning process, and a second fluid mixture can be prepared as needed using different operational controls of the pump systems 620, 622, and 624 to introduce the second fluid mixture to interact with the wafer 108 during a second scanning process. Additional fluid mixtures can be prepared as needed and directed to the wafer 108 as needed. In an embodiment, holding loop 632 has a volume to support multiple wafer scanning processes without the need for refilling. For example, a scanning solution can be prepared, where a portion of the scanning solution (e.g., a "blank" sample) can be sent to an analysis system to verify that the solution is within the operating constraints for the wafer. The remaining scanning solution in holding loop 632 can then be used for multiple scanning processes, where the scanning solution is pre-verified as suitable for use. Fig. 9B An exemplary loading of chemical blanks for analysis is shown.

[0089] Reference Fig. 9B , the fluid handling system 106 is shown in an exemplary nozzle bypass configuration for sending a chemical blank for analysis without passing the blank through the nozzle 304. In the nozzle bypass configuration, the pump 610 is in fluid communication with the holding loop 632 (e.g., through the valve 630 in the second valve configuration) to push the fluid held in the holding loop 632 to the sample holding line (e.g., the sample holding loop 634) via the valve 636 in the first valve configuration and the valve 638 in the first valve configuration. When the fluid is isolated in the sample holding loop 634, the fluid handling system 106 can switch various configurations to a sample injection configuration to transfer the sample to the analysis system for analysis. The analysis system may include, but is not limited to, an inductively coupled plasma spectrometer for trace element composition determination.

[0090] Reference Fig. 9C , the fluid handling system 106 is shown in an exemplary chemical injection configuration, whereby the loop 632 is maintained in fluid communication with one or more delivery mechanisms. For example, in one embodiment, the valve 638 is in a second configuration (in Fig. 9C 640) to fluidly couple the holding loop 632 to a gas delivery source (e.g., nitrogen pressure source 640) to push the sample held in the holding loop 632 to a delivery line 642 leading to a sample analysis system via valve 644 in a first valve configuration and valve 646 in a second valve configuration. In one embodiment, valve 638 is in a third valve configuration (in a Fig. 9C ), to be in the first valve configuration ( Fig. 9C The valve 648 (shown in solid lines) couples the holding loop 632 to the pump 602 fluid, which pushes the sample held in the holding loop 632 to the transfer line 642 leading to the sample analysis system via the valve 644 in the first valve configuration and the valve 646 in the first valve configuration. The pump 602 can use a working solution (e.g., deionized water from a DIW source 650) to push the sample to the transfer line 642. In an embodiment, the fluid handling system 106 introduces a fluid gap between the working fluid and the sample, such as by introducing a bubble (e.g., from a nitrogen pressure source 640) into the holding loop 632 before pushing the working solution. In an embodiment, the fluid handling system 106 includes a sensor 652 adjacent to the transfer line 642 to detect the presence or absence of fluid in the transfer line 642. For example, sensor 652 can detect the back end of the sample pushed from holding loop 632 (e.g., by detecting an air bubble in the line), wherein the sensor signal or lack thereof can notify the controller of fluid handling system 106 to switch the configuration of valves 646 and 648 to a second valve configuration (in Fig. 9C 6 (shown in phantom in the figure) to fluidly connect the pump 602 to the transfer line 642 via the fluid line 654. In this configuration, other portions of the fluid handling system 106 are isolated from the transfer of the sample to the sample analyzer to allow those other portions to be flushed during the sample transfer.

[0091] Reference Fig.9D, the fluid handling system 106 is shown in an exemplary nozzle loop loading configuration, whereby the holding loop 632 is in fluid communication with the nozzle holding line (e.g., nozzle holding loop 656) in preparation for introducing fluid to the nozzle 304. In the nozzle loop loading configuration, the pump 610 is in fluid communication with the holding loop 632 (e.g., via valve 630 in the second valve configuration) to push the fluid held in the holding loop 632 to the nozzle holding loop 632 via valve 636 in the second valve configuration and valve 658 in the first valve configuration. In an embodiment, the nozzle holding loop 632 has a volume of approximately 500 μL, and the holding loop 632 has a volume of approximately 5-20 mL to allow the nozzle holding loop 632 to be filled by operating the pumps 604, 606, 608 for each preparation of the scanning solution. When the fluid is isolated in the nozzle holding loop 656, the fluid handling system 106 can switch various configurations to a nozzle loading configuration to deliver fluid to the nozzle 304 for use in a scanning process of the wafer 108 or to obtain a nozzle blank sample (e.g., directing the fluid to an inert surface, such as the surface of the rinse station 114, and removing a sample from the inert surface for analysis).

[0092] Reference Fig.9E , the fluid handling system 106 is shown in an exemplary nozzle loading configuration, whereby the pump 600 is in fluid communication with the nozzle holding loop 656 and the nozzle 304 via the valve 658 in the second valve configuration to push the fluid from the nozzle holding loop 656 to the nozzle 304. In an embodiment, during the scanning process, the wafer 108 remains stationary while the nozzle 304 is loaded by the pump 600. In an embodiment, before filling the nozzle 304 with fluid, the system 100 performs a zeroing operation of the nozzle 304 (e.g., see FIG. 1 ). Figures 8A to 8C108 ). The nozzle is then placed in a scanning position above the wafer 108 where the pump 600 can operate to push fluid from the nozzle holding loop 656 to the inlet port 506 of the nozzle 304, through the nozzle body 500 to the first nozzle port 506 and onto the surface 146 of the wafer 108 (or onto an inert surface for nozzle blank analysis). In an embodiment, a controller of the fluid handling system 106 controls operation of the pump 600 based on sensing signals or lack thereof from sensors 534A and 534B that detect the presence or absence of fluid directed to or away from the nozzle 304 indicating filling of the nozzle 304. In an embodiment, detection of the leading end of the fluid by sensor 534A causes the pump 600 to reduce the flow rate of the fluid directed to the nozzle 304 (e.g., from a flow rate of approximately 50 μL / min to a flow rate of 10-20 μL / min). In an embodiment, the pump 600 operates to fill the nozzle 304 until the trailing end of the fluid is registered by sensor 534B. The pump 600 may then be operated for a period of time to push the rear end of the fluid into the nozzle 304, and then cease operation, whereby all of the fluid previously held by the nozzle holding loop 656 is positioned on the surface 146 of the wafer 108 (or on an inert surface if a nozzle blank is being performed). The fluid is then supported on the surface 146 by the nozzle 304. In embodiments, a portion of the fluid may protrude from the nozzle cover 510, but may remain in contact with the remainder of the fluid within the channel 512, such as by adhesion forces. The system 100 then transitions to scanning the nozzle 304 over the surface 146 of the wafer 108. During the scanning process, the motor system 112 rotates the wafer 108 (e.g., at approximately 2 rpm), whereby the fluid supported by the nozzle 304 is transmitted over the surface 146 of the wafer 108. In embodiments, the fluid interacts with substantially the entire surface 146 of the wafer 108 in a single rotation of the wafer 108, although additional rotations may be performed. For example, the scanning process may include two rotations of the motor system 112 on the wafer 108 to allow the fluid to contact the entire surface of the wafer 108 twice. After scanning, the nozzle can be rotated so that one end of the nozzle extends beyond the edge of the wafer (e.g., as shown in FIG. Figure 6 described) to facilitate the absorption of fluid from the surface into the nozzle 304 via the second nozzle port 508.

[0093] Reference Fig.9F, the fluid handling system 106 is shown in an exemplary recovery configuration, whereby the pump 602 is in fluid communication with the nozzle 304 via valve 648 in a first configuration, valve 638 in a third configuration, and valve 644 in a second configuration. In the recovery configuration, the pump 602 operates to draw fluid from the surface 146 of the wafer 108 through the second nozzle port 508 and out of the nozzle 304 via the outlet port 504, where the fluid is drawn into the sample holding loop 634. A sensor (e.g., sensor 660) can be used to control the operation of the pump 602, similar to controlling the pump 600 via the output of sensors 534A / 534B. For example, the sensor 660 can detect the back end of the fluid flowing into the sample holding loop 634, which can signal the pump 602 to cease operation (e.g., via a controller of the fluid handling system 106). Once the fluid is held in the sample holding loop 634, the fluid handling system 106 can be switched to a reference loop. Fig. 9C The chemical injection configuration is described to direct fluid to the sample analyzer via transfer line 642. In an embodiment, sample holding loop 634 has a larger volume (eg, 1.5 mL) than the volume of fluid provided to nozzle 304 (eg, 500 μL) to allow for complete recovery of the fluid after a scan.

[0094] Electromechanical devices (e.g., electric motors, servomechanisms, actuators, etc.) can be coupled to or embedded within components of system 100 to facilitate automatic operation via control logic embedded within system 100 or externally driving system 100. Electromechanical devices can be configured to cause movement of devices and fluids according to various processes (e.g., the processes described herein). System 100 may include or be controlled by a computing system having a processor or other controller configured to execute computer-readable program instructions (i.e., control logic) from a non-transitory carrier medium (e.g., a storage medium such as a flash drive, a hard drive, a solid-state disk drive, an SD card, an optical disk, etc.). The computing system can be connected to various components of system 100 by direct connection or through one or more network connections (e.g., a local area network (LAN), a wireless area network (WAN or WLAN), one or more hub connections (e.g., a USB hub), etc.). For example, the computing system may be communicatively coupled to the chamber 102, the motor system 112, the valves described herein, the pumps described herein, other components described herein, components that direct control thereof, or a combination thereof. When executed by a processor or other controller, the program instructions may cause the computing system to control the system 100 (e.g., control a pump, select a valve, an actuator, a spray nozzle, a positioning device, etc.) according to one or more operating modes as described herein.

[0095] It should be appreciated that the various functions, control operations, processing blocks or steps described throughout the present invention may be performed by any combination of hardware, software or firmware. In some embodiments, various steps or functions are performed by one or more of the following electronic circuits, logic gates, multiplexers, programmable logic devices, application specific integrated circuits (ASICs), controllers / microcontrollers or computing systems. Computing systems may include, but are not limited to, personal computing systems, mobile computing devices, host computing systems, workstations, image computers, parallel processors or any other devices known in the art. In general, the term "computing system" is broadly defined to encompass any device having one or more processors or other controllers that execute instructions from a carrier medium.

[0096] Program instructions implementing functions, control operations, processing blocks or steps (such as those represented by the embodiments described herein) may be transmitted or stored on a carrier medium. The carrier medium may be a transmission medium such as, but not limited to, a wire, cable, or wireless transmission link. The carrier medium may also include a non-transitory signal bearing medium or storage medium such as, but not limited to, a read-only memory, a random access memory, a magnetic or optical disk, a solid-state or flash memory device, or a magnetic tape.

[0097] Furthermore, it should be understood that the present invention is defined by the appended claims. Although the embodiments of the present invention have been described, it is apparent that various modifications may be made by those skilled in the art without departing from the scope and spirit of the invention.

Claims

1. A chamber for decomposing and scanning the surface of a semiconductor wafer, comprising: a chamber body defining an interior region and a first hole located at a top of the chamber to receive a semiconductor wafer into the interior region of the chamber body; a flange protruding into the interior region at a middle portion of the chamber body between a top portion of the chamber body and a bottom portion of the chamber body, the flange defining a second hole within the interior region at the middle portion; a wafer support configured to hold at least a portion of the semiconductor wafer, the wafer support being positionable within the interior region of the chamber body between at least a first position adjacent the first aperture and a second position adjacent the second aperture; a motor system operably coupled to the wafer support, the motor system configured to control a vertical position of the wafer support relative to the chamber body to at least a first position for accessing the semiconductor wafer by a scanning nozzle and a second position for decomposing a surface of the semiconductor wafer; a sprayer positioned between the first aperture and the second aperture, the sprayer being configured to spray a decomposing fluid onto a surface of the semiconductor wafer when the wafer support is positioned in the second position by the motor system; a gas outlet port within the interior region of the chamber body below the second aperture; as well as A controller coupled to a gas source is configured to direct gas from the gas source to the gas outlet port during directing of a decomposition fluid onto a surface of the semiconductor wafer by the atomizer when the wafer support is positioned in the second position.

2. The chamber according to claim 1, characterized in that The first hole and the second hole are coaxially arranged.

3. The chamber according to claim 1, characterized in that The motor system is also configured to control the vertical position of the wafer support relative to the chamber body to a third position between the second aperture and the bottom of the chamber.

4. The chamber according to claim 3, characterized in that The motor system is further configured to rotate the wafer support at the third position during at least one of a rinsing process of the semiconductor wafer or a drying process of the semiconductor wafer.

5. The chamber according to claim 1, characterized in that The motor system is also configured to rotate the wafer support in at least one of the first position and the second position.

6. The chamber according to claim 1, characterized in that The chamber body defines one or more channels between an inner surface of the chamber body and the flange, the one or more channels providing access for fluid between the first hole and the second hole.

7. The chamber of claim 6, further comprising one or more drains fluidly coupled to the one or more channels, the one or more drains providing an outlet for fluid from an interior region of the chamber body.

8. The chamber of claim 1, further comprising one or more drains coupled to a bottom of the chamber body.

9. A system for decomposing and scanning the surface of a semiconductor wafer, comprising: A chamber configured to receive a semiconductor wafer, the chamber defining a first hole located at a top of the chamber to receive the semiconductor wafer into an interior region of the chamber, the chamber having: a flange at a mid-portion of the chamber between a top portion of the chamber and a bottom portion of the chamber, the flange defining a second aperture at the mid-portion; a wafer support configured to hold at least a portion of the semiconductor wafer, the wafer support positionable between at least a first position adjacent the first aperture and a second position adjacent the second aperture; a motor system operably coupled to the wafer support, the motor system configured to control a vertical position of the wafer support relative to the chamber to at least the first position and the second position, a sprayer positioned between the first aperture and the second aperture, the sprayer being configured to spray a decomposing fluid onto a surface of the semiconductor wafer when the wafer support is positioned in the second position by the motor system; a gas outlet port within the interior region of the chamber below the second aperture; as well as a controller coupled to a gas source, the controller configured to direct gas from the gas source to the gas outlet port during directing of a decomposition fluid to a surface of the semiconductor wafer through the atomizer when the wafer support is positioned in the second position; a cover positionable between an open position and a closed position, the cover being sized and shaped to cover the first aperture when in the closed position; as well as a scanning arm coupled to the nozzle, the scanning arm rotatable to position the nozzle adjacent to the semiconductor wafer when the wafer support is positioned in the first position by the motor system, and to position the nozzle outside a path of the cover from the open position to the closed position when the wafer support is positioned in the second position by the motor system.

10. The system according to claim 9, characterized in that The sprayer is at least partially disposed within a wall of the chamber.

11. The system according to claim 9, characterized in that When the wafer support is in the second position, the cover is in the closed position to prevent fluid from passing through the first aperture.

12. The system according to claim 9, characterized in that When the wafer support is in the first position, the cover is in the open position to provide access to the semiconductor wafer by the nozzle.

13. The system of claim 9, further comprising an irrigation trough having an elongated channel receiving the nozzle, the elongated channel being configured to be coupled to an irrigation fluid source to introduce irrigation fluid into the elongated channel to irrigate the nozzle.

14. The system according to claim 13, characterized in that The rinse tank includes a second elongated channel receiving the nozzle, the elongated channel being configured to be coupled to a drying gas source to introduce a drying gas fluid into the elongated channel to dry the nozzle.

15. The system according to claim 9, characterized in that The motor system is also configured to control the vertical position of the wafer support relative to the chamber to a third position between the second aperture and the bottom of the chamber.

16. The system according to claim 15, characterized in that The motor system is further configured to rotate the wafer support at the third position during at least one of a rinsing process of the semiconductor wafer or a drying process of the semiconductor wafer.

17. The system according to claim 9, characterized in that The motor system is also configured to rotate the wafer support in at least one of the first position and the second position.

18. The system according to claim 9, characterized in that The nozzle has a nozzle body defining an inlet port in fluid communication with the first nozzle port and defining a second nozzle port in fluid communication with the outlet port, the nozzle body being configured to receive a decomposition fluid through the inlet port and direct the fluid through the first nozzle port to direct the fluid to a surface of the semiconductor wafer, the nozzle body being configured to remove the fluid from the surface of the semiconductor wafer via the second nozzle port and direct the fluid from the second nozzle port through the outlet port; as well as a nozzle shroud extending from the nozzle body adjacent the first nozzle port and the second nozzle port and defining a passage at least partially disposed between the first nozzle port and the second nozzle port, the nozzle shroud being configured to direct the fluid from the first nozzle port to the second nozzle port along a surface of the semiconductor wafer.

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